CN100527450C - Semiconductor optoelectronic component and its cutting method - Google Patents

Abstract

A method for cutting a semiconductor photoelectric assembly comprises the following steps: preparing a semiconductor photoelectric component chip: the semiconductor photoelectric component chip comprises a substrate, wherein an epitaxial silicon layer is formed on the surface of the substrate; laser scribing: laser is used for marking a guide groove on the surface of a semiconductor photoelectric component chip; cutting with a diamond cutter: cutting the groove by a diamond cutter; forming a semiconductor photoelectric component crystal grain: and splitting the semiconductor photoelectric component chip along the scribed groove to form the semiconductor photoelectric component crystal grain. The semiconductor photoelectric component of the invention is provided with a substrate and an epitaxial silicon layer, wherein the epitaxial silicon layer is formed on one surface of the substrate, the side surface of the substrate is provided with a rough surface, and the rough surface is formed by performing laser scribing on the surface of a semiconductor photoelectric component chip to generate a guide groove and then performing diamond knife cutting in the guide groove.

Description

Semiconductor optoelectronic component and its cutting method

technical field

The invention relates to a semiconductor optoelectronic component and its cutting method, especially to a cutting method of a semiconductor optoelectronic component combined with electric jet cutting and diamond knife cutting, which can remove the scorched area on the crystal grain of the semiconductor optoelectronic component and reduce the diamond Knife loss.

Background technique

Since red, blue and green are the three primary colors of full-color, the application of high-brightness blue light-emitting diodes (LEDs) for full-color displays has been increasingly valued, and optical information access technology will also use short-wavelength blue light-emitting diodes as light sources. In addition, white light-emitting diodes derived from blue light-emitting diodes are also considered to be the next generation of lighting technology.

Generally, the traditional cutting methods of light-emitting diodes include diamond knife cutting and laser cutting. Please refer to Figure 5, diamond knife dicing is to cut a groove (80) with a depth of several microns (um) on the back of the substrate of the light-emitting diode chip with a diamond knife, also known as the scribe (scribe) process, and then emit light The front side of the diode chip is aligned with the scribe line and split by a blade to form the LED grain. Since white light and blue light emitting diodes mostly use a very hard sapphire substrate, if a diamond knife cutting method is used for white light and blue light emitting diodes, it will cause serious abrasion of the diamond blade, thereby increasing the manufacturing cost of the light emitting diodes. In addition, since the diamond knife is cut in a point-contact manner, lateral and radial cracks are often formed on both sides of the groove. When splitting, the chip often cannot be completely broken according to the predetermined direction, resulting in chipping and cracking of the crystal grains. Phenomenon, thus resulting in poor appearance of the grains, which reduces the process yield.

Please refer to Figure 6, the laser cutting method is to use laser instead of diamond knife to carry out the scribing process, because the groove (90) drawn by laser scribing has a high aspect ratio, so the appearance of the split light-emitting diode crystal grain It is better than the diamond knife cutting method, and because the laser cutting method does not have the problem of diamond knife loss, the manufacturing cost of the light-emitting diode crystal grains is lower. However, since laser cutting will form a charred layer on the inner wall surface of the groove (90), a charred area will be formed on the surface of the LED grain, affecting the light extraction effect of the LED grain.

Since the cutting and separation of die belongs to the back-end process of light-emitting diodes, if the product is scrapped due to poor quality of the cutting process, the time-consuming and expensive production costs such as the front-end process will be put into flow, so the cutting of die It is of key importance for the manufacture of semiconductor optoelectronic components such as light-emitting diodes.

Contents of the invention

In view of the problems that the traditional cutting method of semiconductor optoelectronic components has the problems of poor appearance yield, high diamond knife wear, and affecting the light extraction effect, the main purpose of the present invention is to provide a semiconductor optoelectronic component and its cutting method, which can reduce the cost of the diamond knife. wear, improve the appearance yield and increase the light-emitting effect by forming a rough surface or an inclined surface on the side of the semiconductor optoelectronic component crystal grain.

In order to achieve the above object, the cutting method of the semiconductor optoelectronic component of the present invention comprises the following steps:

Prepare a semiconductor optoelectronic component chip: the semiconductor optoelectronic component chip includes a substrate, and an epitaxial silicon layer is formed on the surface of the substrate;

Laser scribing: use laser to draw guide grooves on the surface of semiconductor optoelectronic component chips;

Diamond knife cutting: use a diamond knife to cut in the guide groove;

Forming semiconductor optoelectronic component grains: Splitting semiconductor optoelectronic component chips along the grooves that have been drawn to form semiconductor optoelectronic component crystal grains.

Preferably, the laser scribing step is to draw a guide groove on the back surface of the semiconductor optoelectronic component chip.

Preferably, before the laser scribing step, first remove the epitaxial silicon layer in the area where the groove is to be drawn on the front side of the semiconductor optoelectronic component chip, and then use laser to draw a guide groove on the surface of the substrate where the epitaxial silicon layer has been removed .

The semiconductor optoelectronic component of the present invention has a substrate and an epitaxial silicon layer, the epitaxial silicon layer is formed on a surface of the substrate, and the side of the substrate is provided with a rough surface, and the rough surface is used for laser scribing on the surface of the semiconductor optoelectronic component chip The guide groove is produced, and then diamond knife cutting is performed in the guide groove to form. The rough area can be an inclined surface or a wavy surface.

Preferably, the inclined surface is provided on the surface of the crystal grain of the semiconductor optoelectronic component not provided with the epitaxial silicon layer.

The specific effects that the present invention can achieve include:

1. In the present invention, a guide groove is drawn with a laser on the substrate of the semiconductor optoelectronic component chip, and then the scorched layer generated by the laser is removed by cutting with a diamond knife. Light effect.

2. In the present invention, because the diamond knife is cut in the guide groove drawn by the laser, because the material properties of the charred black layer are relatively fragile, it is not easy to cause the wear of the diamond knife, and compared with only cutting with a diamond knife, the guide Lateral cracks are less likely to occur on both sides of the guide groove, so when the semiconductor optoelectronic component chip is separated to form the semiconductor optoelectronic component grain, the chip can be broken along the predetermined guide groove, so the appearance of the grain is better, which can improve The grain yield rate reduces the manufacturing cost, and there is no need to keep an overly wide dicing line, which increases the number of grains that can be separated from the chip.

3. Compared with the simple laser cutting method, the cutting method of the present invention can naturally form an inclined surface on the side of the crystal grain of the semiconductor optoelectronic component due to the cutting of the diamond knife, thereby improving the light extraction efficiency of the semiconductor optoelectronic component.

Description of drawings

Fig. 1 is a flowchart of the cutting method of the present invention.

Fig. 2 is a flowchart of the first preferred embodiment of the cutting method of the present invention.

Fig. 3 is a flowchart of the second preferred embodiment of the cutting method of the present invention.

Fig. 4 is a schematic diagram of the semiconductor optoelectronic component of the present invention.

Fig. 5 is a flow chart of the laser cutting method.

Fig. 6 is a flow chart of the diamond knife cutting method.

Explanation of main component symbols

(11) Substrate (111) Groove

(112) Inclined surface (12) Epitaxial silicon layer

(13) Metal electrodes

(21) Substrate (211) Groove

(212) Inclined surface (22) Epitaxial silicon layer

(31) p-type electrode (32) GaAs epitaxial silicon layer

(33) n-type GaAs substrate (34) n-type electrode

(35) inclined surface

(80) Groove

(90) Groove

Detailed ways

Please refer to shown in Fig. 1, the cutting method of semiconductor optoelectronic component of the present invention is to comprise:

Prepare semiconductor optoelectronic component chip: please refer to as shown in Figure 2, the semiconductor optoelectronic component chip is formed with an epitaxial silicon layer (12) on the substrate (11), and is provided with a metal electrode (13) on the epitaxial silicon layer (12), The epitaxial silicon layer (12) material can be a semiconductor material of III-V compound, such as materials such as GaN, GaS, GaP, InP, InGaAlN, InGaAlP, InGaAlAs and GaAlPAs; the epitaxial silicon layer (12) material can also be II- Semiconductor materials of group VI compounds, such as ZnO, ZnSe, ZnS and ZnTe; the epitaxial silicon layer (12) material can also be semiconductor materials of group IV elements, such as Si and Ge.

Laser scribing: Use laser to draw a guide groove on the substrate surface of the semiconductor optoelectronic component chip. At this time, due to the high temperature melting effect of the laser, a charred black layer is formed on the inner wall surface of the groove; please refer to Figure 2, which is used in the present invention In the first preferred embodiment of the cutting method, the laser is on the back side of the semiconductor optoelectronic component chip, that is, the surface where the epitaxial silicon layer (12) is not formed, and guide grooves (111) are drawn; please refer to FIG. In the second preferred embodiment of the cutting method of the present invention, the epitaxial silicon layer (22) on the front surface of the semiconductor optoelectronic component chip to be grooved (22) is removed by a process method, and then the epitaxial silicon layer (22) is removed on the substrate (21) by laser. A guide groove (211) is defined on the surface of the layer (22);

Diamond knife cutting: use a diamond knife to cut in the grooves (111) (211) drawn by the laser, scrape off the charred layer formed by the laser and increase the depth of the line; because the material properties of the charred layer are relatively fragile, it is not easy Cause the wearing and tearing of diamond cutter; Owing to delineate guide groove (111) (211) with laser in advance at this moment, so when diamond cutter cuts in groove (111) (211), diamond cutter can be bigger area and groove Groove (111) (211) contact, so groove (111) (211) both sides are less likely to produce lateral cracks; Keep too wide dicing line to increase the number of crystal grains that can be separated from the chip;

Forming semiconductor optoelectronic component grains: separating the semiconductor optoelectronic component chips along the scribed grooves (111) (211) to form semiconductor optoelectronic component grains; the scorched black layer generated due to laser scribing has been cut and scraped by a diamond knife Therefore, it can avoid the influence of the charred black layer on the light-emitting effect of the crystal grains of the semiconductor optoelectronic component; in addition, because the lateral cracks on both sides of the groove (111) (211) are greatly reduced, the chip can be separated according to the direction of the groove when splitting. Fracture, avoid chipping or cracking of the crystal grains, and improve the appearance yield of the grains; by cutting with a diamond knife, a rough surface can be naturally formed on the side of the crystal grain of the semiconductor optoelectronic component, and this surface can be an inclined surface (112) (212) to increase the light-emitting effect of the semiconductor optoelectronic component; in the first preferred embodiment, the inclined surface (112) is formed on the back side of the semiconductor optoelectronic component crystal grain; in the second preferred embodiment, the inclined surface ( 212) is formed on the front side of the crystal grain of the semiconductor optoelectronic component.

The semiconductor optoelectronic component of the present invention has a substrate (11) (21) and an epitaxial silicon layer (12) (22), and the epitaxial silicon layer (12) (22) is formed on a surface of the substrate (11) (21) The side surface of the substrate is provided with a rough surface, which is formed by laser scribing on the surface of the semiconductor optoelectronic component chip to generate a guide groove, and then cutting with a diamond knife in the guide groove. The rough surface can be an inclined surface (112) (212). Since the side of the substrate (11) (21) is provided with an inclined surface (112) (212), it can increase the light output effect of the crystal grain of the semiconductor optoelectronic component, and the inclined surface ( 112)(212) can be formed on the surface of the substrate (11)(21) without the epitaxial silicon layer (12)(22), or on the surface with the epitaxial silicon layer (12)(22); the rough surface is also It can be a wavy surface, which is formed by laser scribing and then scraping off the burnt black layer by cutting with a diamond knife.

Please refer to shown in Fig. 4, the embodiment of the semiconductor optoelectronic component of the present invention comprises a p-type electrode (31), a GaAs epitaxial silicon layer (32), an n-type GaAs substrate (33) and an n-type electrode (34) , the GaAs epitaxial silicon layer (32) is located on the surface of the n-type GaAs substrate (33), the p-type electrode (31) is located on the surface of the GaAs epitaxial silicon layer (32), and the n-type electrode (34) is located on the n-type GaAs substrate (33) surface. On the surface of the n-type GaAs substrate (33), the inclined surface (35) formed by laser scribing and diamond knife cutting can be formed on the surface of the n-type GaAs substrate (33) on which no GaAs epitaxial silicon layer (32) is formed.

The cutting method of the present invention is to first draw the guide groove (111) (211) with laser on the substrate (11) (21) of the semiconductor optoelectronic component chip, and then use a diamond knife to cut and remove the charred layer caused by the laser scribing , so it can avoid the formation of scorched black areas on the surface of semiconductor optoelectronic component crystal grains and affect the light extraction effect. In addition, since the diamond knife is cut in the guide groove (111) (211) drawn by laser, it is not easy to cause wear of the diamond knife. Compared with the laser cutting method, the cutting method of the present invention can naturally form inclined surfaces (112) (212) on the crystal grain side of the semiconductor optoelectronic component, thereby improving the light extraction efficiency of the semiconductor optoelectronic component.

The cutting method of the present invention can be applied to various semiconductor optoelectronic components, such as semiconductor components such as light emitting diodes, laser diodes, light detectors and solar cells.

Claims (10)

1. A cutting method of semiconductor optoelectronic components, which comprises the following steps: Prepare a semiconductor optoelectronic component chip: the semiconductor optoelectronic component chip includes a substrate, and an epitaxial silicon layer is formed on a surface of the substrate; Laser scribing: use laser to draw guide grooves on the surface of semiconductor optoelectronic component chips; Diamond knife cutting: use a diamond knife to cut in the groove, and scrape off a burnt black layer formed in the laser scribing step and increase the scribing depth; Forming semiconductor optoelectronic component grains: separating the semiconductor optoelectronic component chips along the grooves that have been drawn to form semiconductor optoelectronic component grains. 2 . The cutting method according to claim 1 , wherein the laser scribing step is to draw guide grooves on the surface of the substrate of the semiconductor optoelectronic component chip on which no epitaxial silicon layer is formed. 3 . 3. The cutting method according to claim 1, characterized in that: before the laser scribing step, the epitaxial silicon layer in the semiconductor optoelectronic component chip where the groove area is to be drawn is first removed, and then the epitaxial silicon layer is removed on the substrate by laser Guide grooves are drawn on the surface. 4. The cutting method according to any one of claims 1 to 3, characterized in that: the material of the epitaxial silicon layer is a III-V semiconductor material. 5. A semiconductor optoelectronic component, which has a substrate and an epitaxial silicon layer, the epitaxial silicon layer is formed on a surface of the substrate, and the side surface of the substrate is provided with a rough surface, and the rough surface is for the surface of the semiconductor optoelectronic component chip. Laser scribing to produce guide grooves, and then diamond knife cutting in the guide grooves. 6. The semiconductor optoelectronic device according to claim 5, wherein the rough surface is an inclined surface and is provided on the surface of the substrate on which no epitaxial silicon layer is formed. 7. The semiconductor optoelectronic device according to claim 5, wherein the rough surface is an inclined surface and is provided on the surface of the substrate on which the epitaxial silicon layer is formed. 8 . The semiconductor optoelectronic device as claimed in claim 5 , wherein the rough surface is wavy and is provided on the surface of the substrate on which no epitaxial silicon layer is formed. 9. The semiconductor optoelectronic device as claimed in claim 5, wherein the rough surface is wavy and is provided on the surface of the substrate on which the epitaxial silicon layer is formed. 10. The semiconductor optoelectronic component according to any one of claims 5 to 9, wherein the material of the epitaxial silicon layer is a III-V semiconductor material.

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