CN100524877C - Phase change memory element and method of manufacturing the same - Google Patents
Phase change memory element and method of manufacturing the same Download PDFInfo
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- CN100524877C CN100524877C CNB2006100940440A CN200610094044A CN100524877C CN 100524877 C CN100524877 C CN 100524877C CN B2006100940440 A CNB2006100940440 A CN B2006100940440A CN 200610094044 A CN200610094044 A CN 200610094044A CN 100524877 C CN100524877 C CN 100524877C
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 150000004770 chalcogenides Chemical class 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 8
- 229910010037 TiAlN Inorganic materials 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 1
- 238000001259 photo etching Methods 0.000 abstract description 12
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- 238000010438 heat treatment Methods 0.000 description 14
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- 229910052581 Si3N4 Inorganic materials 0.000 description 12
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
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Abstract
The invention provides a phase change memory element. The first columnar electrodes and the second columnar electrodes are arranged in a horizontal direction. The graphical phase change layer is positioned between the first columnar electrode and the second columnar electrode and is electrically connected with the first columnar electrode and the second columnar electrode, and the overall graphical phase change layer is positioned on a plane structure. The lower electrode is electrically connected to the first columnar electrode, and the upper electrode is electrically connected to the second columnar electrode. The patterned phase change layer is formed on the horizontal plane, so that the patterned phase change layer is integrally a plane, and compared with the conventional phase change layer formed in the groove, the patterned phase change layer has a shorter current path and fewer defects. In addition, the contact area of the phase change layer and the electrode is determined by the thickness of the patterned phase change layer, and the exposure limit size can be broken through. In addition, the number of photomasks and the number of photoetching steps of the process steps are less than that of the existing horizontal phase change memory, and the process is simpler.
Description
Technical field
The present invention relates to a kind of memory component and manufacture method thereof, and particularly relate to a kind of phase change memory component and manufacture method thereof.
Background technology
Phase transition storage has competitive characteristics such as speed, power, capacity, reliability, process integration degree and cost, is fit to be used as the stand alone type or the Embedded memory application of higher density.Because the unique advantage of phase transition storage technology, also make it be considered to might replace very much nonvolatile memory technology such as volatile memory such as highly competititve static memory SRAM of present commercialization and dynamic random access memory DRAM and flash memory Flash, be expected to become following potential new generation semiconductor memory.
Figure 1A illustrates the phase transition storage of existing T type structure, shown in Figure 1A, the phase transition storage of existing T type structure comprises bottom electrode 102 in regular turn, plug 104, phase change layer 106 are fastened in contact down, upward plug 108 and top electrode 110 are fastened in contact, wherein the following contact of column is fastened plug 104 for heating electrode, it contacts with phase change layer 106, following contact is fastened the contact area of plug 104 and phase change layer 106 by contacting the size decision of fastening plug 104 down, and the limit of dwindling by the gold-tinted photoetching of size determines, therefore, the size micro is more difficult relatively.
In addition, prior art has also disclosed the phase transition storage of horizontal structure, shown in Figure 1B, heating electrode 112 adopts and is horizontally disposed with, so, the size of heating electrode 112 is by the film thickness decision that forms heating electrode 112, can not be subjected to the qualification of gold-tinted photolithography limitation, yet the phase-change material 114 of this technology is to fill out the hole process deposits, the reliability that contacts with heating electrode 112, uniformity is all undesirable, in addition, heating electrode 112 must select high-resistance material in order to the efficiency of heating surface, but because heating electrode 112 path lengths, turn on process has excessive power loss, in addition, the circulation path of electric current in phase-change material layers 114 is also longer, causes excessive power loss equally, again in addition, the use photomask number of this horizontal structure phase transition storage Duos one to twice than traditional T type, cost of manufacture is higher.
US 6; 867; 425 have disclosed a kind of side direction type phase change memory component; shown in Fig. 1 C; it forms electrode material and in addition graphical on substrate 150; and utilize electrode 152,153 after graphical as two electrodes 152,153 of current flowing on the phase-change material 154, and phase-change material 154 and graphical after electrode 152,153 at interval with dielectric layer 156, and protective layer 158 covering phase-change materials of forming by dielectric material 154.The benefit of this side direction type phase change memory component is can contact by side direction type to reduce operating current, and the shortening by two electrode spacings can reduce the flow through path of phase-change material of electric current, and then the power loss can reduce element operation the time, yet its also inevitable following shortcoming: phase-change material deposits to fill out hole technology equally, the same undesirable with reliability, the uniformity of heating electrode contact, and, cause the more serious hole predicament of filling out in order to shorten interelectrode distance.Heating electrode must select high-resistance material in order to the efficiency of heating surface, but the heating electrode path is longer than above-mentioned prior art, causes bigger power loss.Outside the heating electrode, still must be at the extra conduction electrode of the both sides of horizontal plane, memory is single will to occupy huge area.It is higher to use the photomask number Duo one, cost of manufacture than traditional T type.
Summary of the invention
According to the problems referred to above, main purpose of the present invention is for providing a phase change memory component, compares with the phase change layer that tradition is formed at groove to have shorter current path, and has less defective.In addition, the contact area of phase change layer and electrode can be broken through exposure dimension limit by the thickness decision of graphical phase change layer.
The invention provides a kind of phase change memory component.First columnar electrode and the second columnar electrode along continuous straight runs are arranged.Graphical phase change layer and is electrically connected first columnar electrode and second columnar electrode between first columnar electrode and second columnar electrode, wherein whole graphical phase change layer is positioned on the planar structure.Bottom electrode is electrically connected first columnar electrode, and top electrode is electrically connected second columnar electrode.
The invention provides a kind of manufacture method of phase change memory component.At first, provide substrate, substrate comprises source electrode and drain electrode.Form a plurality of plain conductors and the connector that are electrically connected drain electrode thereafter; On plain conductor or connector, form the bottom electrode that is arranged in first dielectric layer.Then, form the first columnar electrode Lower Half and the second columnar electrode Lower Half that is arranged in second dielectric layer on the bottom electrode and first dielectric layer, wherein the first columnar electrode Lower Half is electrically connected bottom electrode; On the part first columnar electrode Lower Half, the part second columnar electrode Lower Half and part second dielectric layer, form graphical phase change layer.Follow-up, on the graphical phase change layer of the first columnar electrode Lower Half, the second columnar electrode Lower Half and part, formation is arranged in the first columnar electrode first half and the second columnar electrode first half of the 3rd dielectric layer, to form first columnar electrode and second columnar electrode, wherein graphical phase change layer extends in first columnar electrode and second columnar electrode.Follow-up, the top electrode of the formation electrical connections second columnar electrode first half.
The invention provides a kind of manufacture method of phase change memory component.At first, provide substrate, substrate comprises source electrode and drain electrode; Form a plurality of plain conductors and the connector that are electrically connected drain electrode.Then, on plain conductor or connector, form the bottom electrode that is arranged in first dielectric layer, on the bottom electrode and first dielectric layer, form second dielectric layer.Follow-up, on second dielectric layer, form phase change layer, on the phase change layer and second dielectric layer, form the 3rd dielectric layer.On three dielectric layer form patterned photoresist layer thereafter; With patterned photoresist layer is mask, etching second dielectric layer and the 3rd dielectric layer, and to form at least two openings, its split shed runs through the phase change layer of part.Next, electric conducting material is inserted opening, to form at least two columnar electrodes.
The invention provides a kind of manufacture method of phase change memory component.At first, provide substrate, substrate comprises source electrode and drain electrode; Form a plurality of plain conductors and the connector that are electrically connected drain electrode.Then, on plain conductor or connector, form the bottom electrode that is arranged in first dielectric layer, on the bottom electrode and first dielectric layer, form second dielectric layer.Follow-up, on second dielectric layer, form phase change layer; On the phase change layer and second dielectric layer, form the 3rd dielectric layer.Next, graphical phase change layer.On three dielectric layer form patterned photoresist layer thereafter; With patterned photoresist layer is mask, etching second dielectric layer and the 3rd dielectric layer, and to form at least two openings, its split shed runs through the graphical phase change layer of part.Next, electric conducting material is inserted opening, to form at least two columnar electrodes, so, graphical phase change layer is positioned between two columnar electrodes, and side joint two columnar electrodes.
Description of drawings
Figure 1A illustrates the phase transition storage of existing T type structure.
Figure 1B illustrates the phase transition storage of existing level structure.
Fig. 1 C illustrates existing side direction type phase transition storage schematic diagram.
Fig. 2 A～Fig. 2 E discloses the profile of the manufacturing process of one embodiment of the invention phase transition storage.
Fig. 3 is for disclosing the plane graph of one embodiment of the invention phase transition storage.
Fig. 4 A～Fig. 4 E is the profile of the manufacturing process of announcement another embodiment of the present invention phase transition storage.
Fig. 5 A～Fig. 5 E is the profile of the manufacturing process of announcement further embodiment of this invention phase transition storage.
Fig. 6 is for disclosing the plane graph of another embodiment of the present invention phase transition storage.
The simple symbol explanation
102～bottom electrode;
Plug is fastened in 104～down contacts;
106～phase change layer;
108～go up contact to fasten plug;
110～top electrode;
112～heating electrode;
114～phase-change material;
150～substrate;
152～electrode;
153～electrode;
154～phase-change material;
156～dielectric layer;
158～protective layer;
200～substrate;
202～active area;
204～grid;
206～source area;
208～drain region;
210～ground floor plain conductor;
212～second layer metal lead;
214～the first connectors;
216～the three-layer metal leads;
218～the second connectors;
220～the 3rd connectors;
222～interlayer dielectric layer;
224～the first dielectric layers;
226～bottom electrode;
228～the second dielectric layers;
230～columnar electrode Lower Half;
232～graphical phase change layer;
234～the 3rd dielectric layers;
236～columnar electrode first half;
240～columnar electrode;
242～the 4th dielectric layers;
244～top electrode;
404～the first dielectric layers;
402～bottom electrode;
406～the second dielectric layers;
408～graphical phase change layer;
410～the 3rd dielectric layers;
412～definition photoresist layer;
414～columnar electrode;
416～the 4th dielectric layers;
418～top electrode;
502～the first dielectric layers;
504～bottom electrode;
506～the second dielectric layers;
508～phase change layer;
510～the 3rd dielectric layers;
512～photoresist layer;
514～opening;
516～columnar electrode;
518～the 4th dielectric layers;
520～top electrode.
Embodiment
Fig. 2 A～Fig. 2 E is the profile of the manufacturing process of announcement one embodiment of the invention phase transition storage, at first, please refer to Fig. 2 A, substrate 200 is provided, substrate 200 includes source region 202, be formed with grid 204 on the active area 202, grid 204 both sides are formed with impure source district 206 and drain region 208 respectively, source area 206, drain region 208 contacts with the ground floor plain conductor 210 of correspondence respectively with grid 204, second layer metal lead 212 contacts with ground floor plain conductor 210 by first connector 214, three-layer metal lead 216 contacts with second layer metal lead 212 by second connector 218, be formed with the 3rd connector 220 on the three-layer metal lead 216, and isolate with interlayer dielectric layer 222 between above-mentioned plain conductor and connector.
Thereafter, on the 3rd connector 220, form first dielectric layer of forming by silicon nitride, silica or silicon oxynitride 224, next, carry out the photoetching etching with the first road photomask, in first dielectric layer 224, form opening, thereafter deposition and the etch-back electric conducting material of TiN, TaN or TiW for example is to form bottom electrode 226 in opening.
Please refer to Fig. 2 B, on the bottom electrode 226 and first dielectric layer 224, form second dielectric layer of forming by silicon nitride, silica or silicon oxynitride 228, next, carry out the photoetching etching with the second road photomask, in second dielectric layer 228, form at least two openings, thereafter, deposition and etch-back be refractory metal, low heat conduction coefficient metal, phase change material memory or the chalcogenide of W or TiAlN for example, to form columnar electrode Lower Half 230 in opening.
Please refer to Fig. 2 C, all thick property ground deposition is by the phase change layer of Ag, In, Te, Sb, Ge or combinations thereof on the columnar electrode Lower Half 230 and second dielectric layer 228, and phase change layer can comprise the ternary chalcogenide (GeTe-Sb for example of Ge-Te-Sb
2Te
3) or the binary that blendes together of each ratio of Sb-Te form chalcogenide, wherein chalcogenide mixes and comprises Cr, Fe, the mixture of Ni and aforementioned correspondence, or Bi, Pb, Sn, As, S, Si, P, the mixture of O and aforementioned correspondence.
Then, carry out the photoetching etching with the second road photomask, graphical phase change layer is to form the graphical phase change layer 232 of the adjacent columnar electrode Lower Half 230 of cross-over connection two.
Please refer to Fig. 2 D, at graphical phase change layer 232, form on second dielectric layer 228 and the columnar electrode Lower Half 230 by silicon nitride, the 3rd dielectric layer 234 that silica or silicon oxynitride are formed, next, carry out the photoengraving carving technology with the above-mentioned former second road photomask, in the 3rd dielectric layer 234, form at least two openings, expose corresponding columnar electrode Lower Half 230 respectively, be noted that etching step need keep graphical phase change layer 232, in a preferred embodiment of the invention, this etch process compares greater than 10 the selection of the 3rd dielectric layer 234 and graphical phase change layer 232, and during with exposure definition opening, the side-play amount of the columnar electrode Lower Half 230 of opening and correspondence can not be too big, thereafter deposition and the etch-back refractory metal of W or TiAlN for example, the low heat conduction coefficient metal, phase change material memory or chalcogenide, in opening, to form the columnar electrode first half 236, so, the columnar electrode Lower Half 230 and the columnar electrode first half 236 constitute columnar electrode 240, preferably, two columnar electrodes 240 are positioned at same one deck, and graphical phase change layer 232 extends in the columnar electrode 240.
Please refer to Fig. 2 E, on columnar electrode 240, form by silicon nitride, the 4th dielectric layer 242 that silica or silicon oxynitride are formed, next, carry out the photoetching etching with the 4th road photomask, in the 4th dielectric layer 242, form opening, thereafter deposition and etch-back TiN for example, the electric conducting material of TaN or TiW, in opening, to form top electrode 244, so, can finish the making of main element of the phase transition storage of this example, it should be noted that the related process of the phase transition storage of this embodiment of the present invention is only used 4 road photomasks and 4 lithographic process steps, compare with existing horizontal phase transition storage technology, can reduce 1 road photomask and 1 lithographic process steps.
Fig. 3 is for disclosing the plane graph of one embodiment of the invention phase transition storage, please refer to Fig. 2 E and Fig. 3, graphical phase change layer 232 is formed on the plane, therefore, graphical phase change layer 232 integral body are a plane, compare with the phase change layer that tradition is formed at groove and can have shorter current path, and have less defective.In addition, the contact area of phase change layer and electrode can be broken through exposure dimension limit by the thickness decision of graphical phase change layer 232.
Fig. 4 A～Fig. 4 E is the profile of the manufacturing process of announcement one embodiment of the invention phase transition storage, and the structure that wherein is positioned at the bottom electrode below is similar with the foregoing description, and identical part adopts the label identical with the foregoing description in this embodiment.At first, please refer to Fig. 4 A, substrate 200 is provided, substrate 200 includes source region 202, be formed with grid 204 on the active area 202, grid 204 both sides are formed with impure source 206 and drain region 208 respectively, source area 206, drain region 208 contacts with the ground floor plain conductor 210 of correspondence respectively with grid 204, second layer metal lead 212 contacts with ground floor plain conductor 210 by first connector 214, three-layer metal lead 216 contacts with second layer metal lead 212 by second connector 218, be formed with the 3rd connector 220 on the three-layer metal lead 216, and isolate with interlayer dielectric layer 222 between above-mentioned plain conductor and connector.
Thereafter, on the 3rd connector 220, form first dielectric layer of forming by silicon nitride, silica or silicon oxynitride 404, next, carry out the photoetching etching with the first road photomask, in first dielectric layer 404, form opening, thereafter deposition and the etch-back electric conducting material of TiN, TaN or TiW for example is to form bottom electrode 402 in opening.
Please refer to Fig. 4 B, on the bottom electrode 402 and first dielectric layer 404, form second dielectric layer 406 that silicon nitride, silica or silicon oxynitride are formed, next, on second dielectric layer 406, deposit to all thick property for example GeTe-Sb
2Te
3Ternary form the phase change layer that binary that chalcogenide or each ratio of Sb-Te blend together is formed chalcogenide, then, carry out the photoetching etching with the second road photomask, the definition phase change layer is to form graphical phase change layer 408.
Please refer to Fig. 4 C, on the graphical phase change layer 408 and second dielectric layer 406, form the 3rd dielectric layer of forming by silicon nitride, silica or silicon oxynitride 410, next, painting photoresist layer 412 on the 3rd dielectric layer 410, and with the 3rd road photomask definition photoresist layer 412.
Please refer to Fig. 4 D, with the photoresist layer 412 after the definition is mask, carry out the photoetching etching, in the 3rd dielectric layer 410 and second dielectric layer 406, form at least two openings, the both sides of running through graphical phase change layer 408 respectively, expose the top electrode 402 or first dielectric layer 404, thereafter, deposition and etch-back be the refractory metal of W or TiAlN for example, the low heat conduction coefficient metal, phase change material memory or chalcogenide, in opening, to form columnar electrode 414, preferably, two columnar electrodes 414 are positioned at same one deck, and the vertical sidewall of graphical phase change layer 408 contact columnar electrodes 414.
Please refer to Fig. 4 E, on columnar electrode 414, form the 4th dielectric layer of forming by silicon nitride, silica or silicon oxynitride 416, next, carry out the photoetching etching with the 4th road photomask, in the 4th dielectric layer 416, form opening, thereafter deposition and the etch-back electric conducting material of TiN, TaN or TiW for example is to form top electrode 418 in opening.Related process that it should be noted that the phase transition storage of this embodiment of the present invention is only used 4 road photomasks and 3 lithographic process steps, compared to existing horizontal phase transition storage technology, can reduce 1 road photomask and 2 lithographic process steps.
Fig. 5 A～Fig. 5 E is the profile of the manufacturing process of announcement one embodiment of the invention phase transition storage, and the structure that wherein is positioned at the bottom electrode below is similar with the foregoing description, and identical part adopts the label identical with the foregoing description in this embodiment.At first, please refer to Fig. 5 A, substrate 200 is provided, substrate 200 includes source region 202, be formed with the grid 204 that is positioned on the gate dielectric on the active area 202, grid 204 both sides are formed with impure source 206 and drain region 208 respectively, source area 206, drain region 208 contacts with the ground floor plain conductor 210 of correspondence respectively with grid 204, second layer metal lead 212 contacts with ground floor plain conductor 210 by first connector 214, three-layer metal lead 216 contacts with second layer metal lead 212 by second connector 218, be formed with the 3rd connector 220 on the three-layer metal lead 216, and isolate with interlayer dielectric layer 222 between above-mentioned plain conductor and connector.
Thereafter, on the 3rd connector 220, form first dielectric layer of forming by silicon nitride, silica or silicon oxynitride 502, next, carry out the photoetching etching with the first road photomask, in first dielectric layer 502, form opening, thereafter deposition and the etch-back electric conducting material of TiN, TaN or TiW for example is to form bottom electrode 504 in opening.
Please refer to Fig. 5 B, on the bottom electrode 504 and first dielectric layer 502, form second dielectric layer of forming by silicon nitride, silica or silicon oxynitride 506, next, on second dielectric layer 506 deposition of all thick property for example the ternary of GeTe-Sb2Te3 form the phase change layer 508 that binary that chalcogenide or each ratio of Sb-Te blend together is formed chalcogenide, on phase change layer 508 form three dielectric layer 510 by silicon nitride, silica or silicon oxynitride formed thereafter.
Please refer to Fig. 5 C, painting photoresist layer 512 on the 3rd dielectric layer 510, and with the 3rd road photomask definition photoresist layer 512, then, with the photoresist layer 512 after the definition is mask, carry out etch process, in second dielectric layer 506 and the 3rd dielectric layer 510, form at least two openings 514, its split shed 514 runs through phase change layer 508, and the exposure top electrode 504 or first dielectric layer 502, thereafter, please refer to Fig. 5 D, deposition and etch-back be the refractory metal of W or TiAlN for example, the low heat conduction coefficient metal, phase change material memory or chalcogenide, with formation columnar electrode 516 in opening 514, and the both sides vertical sidewall of phase change layer 508 contact columnar electrodes 516.
Please refer to Fig. 5 E, on columnar electrode 516, form the 4th dielectric layer of forming by silicon nitride, silica or silicon oxynitride 518, next, carry out the photoetching etching with the 3rd road photomask, in the 4th dielectric layer 518, form opening, thereafter deposition and the etch-back electric conducting material of TiN, TaN or TiW for example is to form top electrode 520 in opening.Fig. 6 please refer to Fig. 5 E and Fig. 6 for disclosing the plane graph of the above embodiment of the present invention phase transition storage, and phase change layer 508 is formed on the plane, and holohedral form ground surrounds columnar electrode 516 and contacts it.
Related process that it should be noted that the phase transition storage of this embodiment of the present invention is only used 3 road photomasks and 3 lithographic process steps, compared to existing horizontal phase transition storage technology, can reduce 2 road photomasks and 2 lithographic process steps.
In addition, the above-mentioned phase change memory component of the present invention can be connected to the driving element that for example comprises mosfet transistor, BJT transistor and diode.
According to the foregoing description, the graphical phase change layer of the embodiment of the invention is formed on the horizontal plane, and therefore, graphical phase change layer integral body is a plane, and it is shorter that tradition is formed at the current path of phase change layer of groove, and defective is less.In addition, the contact area of phase change layer and electrode can be broken through exposure dimension limit by the thickness decision of graphical phase change layer.In addition, the photomask number of processing step of the present invention is compared with existing horizontal phase transition storage with the lithography step number and is lacked, and technology is simpler.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with claim the person of being defined be as the criterion.
Claims (20)
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| CNB2006100940440A CN100524877C (en) | 2006-06-22 | 2006-06-22 | Phase change memory element and method of manufacturing the same |
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| CNB2006100940440A CN100524877C (en) | 2006-06-22 | 2006-06-22 | Phase change memory element and method of manufacturing the same |
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| CN100524877C true CN100524877C (en) | 2009-08-05 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8173987B2 (en) * | 2009-04-27 | 2012-05-08 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
| US8829646B2 (en) * | 2009-04-27 | 2014-09-09 | Macronix International Co., Ltd. | Integrated circuit 3D memory array and manufacturing method |
| CN101789491B (en) * | 2010-02-08 | 2012-05-09 | 中国科学院上海微系统与信息技术研究所 | Phase change memory unit structure, its preparation method and phase change memory array preparation method |
| US20110241077A1 (en) * | 2010-04-06 | 2011-10-06 | Macronix International Co., Ltd. | Integrated circuit 3d memory array and manufacturing method |
| CN103094201B (en) * | 2011-11-04 | 2015-05-06 | 旺宏电子股份有限公司 | Memory device and manufacturing method thereof |
| CN105405971B (en) * | 2015-12-04 | 2018-02-06 | 江苏时代全芯存储科技有限公司 | Phase-change memory and its manufacture method |
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|---|---|---|---|---|
| CN1507088A (en) * | 2002-12-13 | 2004-06-23 | ض� | Lateral phase change memory and its manufacturing method |
| US20040195604A1 (en) * | 2003-04-02 | 2004-10-07 | Young-Nam Hwang | Phase-change memory devices and methods for forming the same |
| CN1639867A (en) * | 2002-07-11 | 2005-07-13 | 松下电器产业株式会社 | Nonvolatile memory and method of manufacturing the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1639867A (en) * | 2002-07-11 | 2005-07-13 | 松下电器产业株式会社 | Nonvolatile memory and method of manufacturing the same |
| CN1507088A (en) * | 2002-12-13 | 2004-06-23 | ض� | Lateral phase change memory and its manufacturing method |
| US20040195604A1 (en) * | 2003-04-02 | 2004-10-07 | Young-Nam Hwang | Phase-change memory devices and methods for forming the same |
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