CN100517075C - Manufacturing method for array substrate of thin film transistor LCD - Google Patents
Manufacturing method for array substrate of thin film transistor LCD Download PDFInfo
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- CN100517075C CN100517075C CNB200610057242XA CN200610057242A CN100517075C CN 100517075 C CN100517075 C CN 100517075C CN B200610057242X A CNB200610057242X A CN B200610057242XA CN 200610057242 A CN200610057242 A CN 200610057242A CN 100517075 C CN100517075 C CN 100517075C
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Abstract
The invention opens a manufacturing method of the thin film transistor liquid crystal display array substrate. Including the following steps: first, forms the first metal film on the substrate; uses the version of the first layer metal film define the design of the first metal film and to form grid scan line and grid electrode. Next, the first insulating layer, the active layer, ohmic contact layer and the second layer metal film were deposited above the metal grid in turn; The use of the second block mask, namely, a gray-first definition of the second mask layer metal film patterns, forms a source of leakage and data scanning lines; Secondly forms the active layer island and conductive thin film transistor device channel. Then it forms the second insulation film on the second metal layer. Finally, the use of the third block mask, that is the second block of gray-definition version of the second mask layer insulation film, forms a second layer insulation film designs, makes some part of the second layer and the second layer of metal insulation layer exposed, and the other part was the protection of light-sensitive materials. Here a transparent conductive film deposits on it, and then removes light sensitive materials and their attachment -the electro-conductive film, finally forms the design of the electric conduction thin film.
Description
Technical field
The present invention relates to the method for making of the array base palte of a kind of Thin Film Transistor-LCD (TFT-LCD).
Background technology
In the Thin Film Transistor-LCD industry, the masking process number of times that reduces array base palte is the method that effectively reduces production costs.Traditional array base palte manufacturing process evolves to masking process five times by six masking process, further is simplified to masking process four times.By reducing the number of times of photoetching process, can reduce the usage charges and the production cost of material, also can improve the utilization ratio and the production capacity of existing equipment simultaneously.The main flow manufacturing process of industry member is five masking process and four masking process at present.
Fig. 1 a and 1b are the vertical view and the schematic cross-section of the single pixel of a kind of thin-film transistor LCD device array substrate of present main flow.The array base palte of this kind back of the body channel etching bottom grating structure mainly is made up of film transistor device, transparent pixels electrode 10, controlling grid scan line 1 and data scanning line 5.Wherein film transistor device is made up of gate electrode 2, gate insulation layer 4, semiconductor layer 3 (comprising active layer and ohmic contact layer), source electrode 6 and drain electrode 7.The gate electrode teat 11 (with the overlapping lug boss of pixel) and the transparent pixels electrode 10 that are used to constitute memory capacitance form memory capacitance.The drain electrode 7 of this kind film transistor device is electrically connected with transparent pixels electrode 10 by passivation layer via hole 9.
Fig. 2 is five masking process process flow diagrams.It is successively by forming the masking process of gate electrode and controlling grid scan line, form the masking process of gate insulation layer, active layer isolated island and ohmic contact layer isolated island, the masking process of formation source electrode, drain electrode and data scanning line forms the masking process of passivation layer via hole and five step process such as masking process of formation transparent pixels electrode and finishes.Each step process is formed by thin film deposition, mask exposure imaging and etching.
The detailed process process of five masking process manufacturing process shown in Figure 2 is as described below: deposition gate metal film on substrate, by the first time masking process formation gate electrode 2 and controlling grid scan line 1 thereof, its vertical view and cross-sectional view are respectively shown in Fig. 3 a and Fig. 3 b; Successive sedimentation gate insulation layer 4 and semiconductor layer 3 (comprising active layer and ohmic contact layer) on gate metal, by masking process formation second time amorphous silicon island, its vertical view and cross-sectional view are respectively shown in Fig. 4 a and Fig. 4 b; Sedimentary origin leaks metallic film on substrate, and by the source of masking process formation for the third time electrode 6, drain electrode 7 and data scanning line 5, its vertical view and cross-sectional view are respectively shown in Fig. 5 a and Fig. 5 b; Deposit passivation layer film on substrate forms passivation layer via hole 9 by the 4th masking process, and its vertical view and cross-sectional view are respectively shown in Fig. 6 a and Fig. 6 b; Deposit transparent conductive film on substrate forms transparent pixels electrode 10 by the 5th masking process at last, and its vertical view and cross-sectional view are respectively shown in Fig. 1 a and Fig. 1 b.
On five masking process bases, the Thin Film Transistor-LCD industrial community has been developed a kind of four masking process utilizing the gray tone mask recently, and its technological process as shown in Figure 8.Utilize the gray tone mask, the masking process of the masking process that forms gate insulation layer, active layer and ohmic contact layer and the source of formation electrode, drain electrode and data scanning line is merged to in the middle of masking process.Its method is successive sedimentation gate insulation layer 4, semiconductor layer 3, source leakage metal level.At first finish the photoetching of source electrode 6, drain electrode 7 and amorphous silicon island, utilize gray tone mask and photoresist ashing technology on the amorphous silicon island, to finish the etching of thin film transistor channel part 14 then.Change the design and processes order of mask, other five masks and four masking process technology are also arranged.
All there are the photoetching process complexity in five masks and four masking process of aforementioned thin-film transistor LCD device array substrate, use the many defectives of mask quantity.In some other technology, use liftoff stripping technology commonly used in the semiconductor technology for reducing the mask number of times, but employed special photoresist stripper not only corrodes photoresist, also other materials is corroded.Drawback such as low, the cost height of yields during above defective has caused and made.
Summary of the invention
In order to overcome the defective of prior art, the invention provides a kind of manufacture method that is different from previous thin-film transistor LCD device array substrate.First purpose of the present invention provides a kind of manufacture method that adopts the thin-film transistor LCD device array substrate of gray tone mask and liftoff stripping technology, uses the array base palte making that three times mask is finished liquid crystal display device.Reduce the number of mask, simplified manufacturing process.Second purpose of the present invention is to optimize resist exposure developing process, conductive sputtering film technology and photoresist ashing technology, make the sidewall of photoresist vertical, thereby when carrying out liftoff stripping technology, utilize this side wall construction, can use common stripper, only photoresist be peeled off, and need not corrode other material, improve the efficient and the reliability of liftoff stripping technology, reduced cost.By the following description of this invention and specific embodiment, can also recognize other advantage of the present invention.
For achieving the above object, the invention provides a kind of method for making of array base palte of Thin Film Transistor-LCD, comprise the listed step of Fig. 9 a: at first, provide an insulation transparent substrate; On dielectric substrate, form ground floor metallic film and one deck photoresist successively; Use the pattern of first block of mask definition photoresist, and etching forms the pattern of ground floor metallic film, i.e. gate electrode and gated sweep; Then, deposition one deck insulating layer of thin-film, one semiconductor layer film and second layer metal film at least on substrate; Coating one deck photoresist on the second layer metal film; Use second mask, promptly first gray tone mask forms the thin film transistor (TFT) silicon island through exposure imaging and etching, utilizes photoresist ashing technology and etching, forms the raceway groove of source-drain electrode and film transistor switch device; At last, deposition one deck passivation layer film on substrate; Coating one deck photoresist on the passivation layer film; Use the 3rd mask, i.e. second gray tone mask is through the zone of the zone that obtains not having photoresist behind the exposure imaging, reserve part photoresist with keep the zone of whole photoresists; The zone that etching does not have photoresist obtains passivation layer via hole; After finishing etching, photoresist is carried out cineration technics, all remove the photoresist in the zone of reserve part photoresist, remove the photoresist in zone of the whole photoresists of reservation of a part of thickness; Deposition layer of transparent conductive film on array base palte, and in conjunction with liftoff stripping technology, peel off the photoresist that remains, deposited transparent conductive film is also removed thereupon on it, and residual transparent conductive film has just formed the transparent pixels electrode pattern and has been electrically connected with the formation of thin film transistor (TFT) drain electrode by passivation layer via hole.
Some steps below the method that adopts described two gray tone mask to form multilayer thin film pattern on substrate comprises: deposit film on glass substrate; Coating one deck photoresist on film; Use the gray tone mask that photoresist is exposed, form certain pattern; Described gray tone mask comprises complete transmission region, semi-transparent zone and not clear transmission region.Semi-transparent zone is made of slit that certain orientation and spacing are arranged and fillet; The lightproof part of gray tone mask comprises the double-layer films material, and the semi light transmitting part branch comprises thin film material layer, and the light transmission part does not have above-mentioned membraneous material fully.The thin film material layer of semi-transparent part is a chromium oxide, and the double-layer films material of lightproof part is chromium or chromium oxide.So complete transmission region is two light transmission parts with different transmittances with semi-transparent zone, the feasible light intensity difference that is radiated on the photoresist; Thereby defined behind the exposure imaging zone that keeps whole photoresists behind the zone of no photoresist, the exposure imaging behind the zone of reserve part photoresist and exposure imaging.Zone by no photoresist behind the exposure imaging of described first gray tone mask definition comprises the part that transparent pixels electrode, controlling grid scan line and part are connected with external circuit; The zone of reserve part photoresist comprises the thin film transistor channel part behind the exposure imaging; The zone that keeps whole photoresists behind the exposure imaging comprises the part that source electrode, drain electrode, data scanning line and part are connected with external circuit.Comprise the part of passivation layer via hole, etching formation passivation layer via hole by the zone of no photoresist behind the exposure imaging of described second gray tone mask definition; The zone of reserve part photoresist comprises the part of transparent pixels electrode behind the exposure imaging of described second gray tone mask definition; Utilize photoresist ashing technology to remove on the transparent pixels electrode zone, expose the passivation layer film under it because of the photoresist of part exposure thinner thickness; Other parts are the zone that keeps whole photoresists behind the exposure imaging.Deposition layer of transparent conductive film on whole base plate, transparent conductive film is filled passivation layer via hole simultaneously; Utilize liftoff stripping technology, peel off the photoresist that remains, deposited transparent conductive film is also removed thereupon on it, and residual transparent conductive film has just formed the transparent pixels electrode pattern and has been electrically connected with the formation of thin film transistor (TFT) drain electrode by passivation layer via hole.Wherein in second gray tone mask technology,, form the photoresist pattern of vertical sidewall by the exposure imaging condition and the cineration technics condition of control photoresist; Further, optimize deposition effect, make transparent conductive film not be deposited on the photoresist sidewall, thereby on substrate, form interrupted transparent conductive film by the mode of deposition of control transparent conductive film.And when adopting described liftoff stripping technology, utilize described vertical photoresist sidewall pattern, can use the common photoresist stripper that does not contain corrosion other materials composition, for example mixed liquor of acetone, isopropyl alcohol, alcohol or above-mentioned solvent etc. does not contain the stripper of acid flux material, this common photoresist stripper only carries out chemical reaction with photoresist, do not corrode other material that comprises transparent conductive film, thereby only photoresist is peeled off, the transparent conductive film on the photoresist is peeled off and is removed with photoresist.
The invention provides a kind of manufacture method of thin-film transistor LCD device array substrate of three masking process, the manufacturing process of liquid crystal display device is simplified, reduced the cost that array substrate for liquid crystal display device is made, improved production efficiency.Use special stripper in other the liftoff stripping technology, it also corrode other materials, and the present invention has optimized liftoff stripping technology except photoresist is peeled off, improved the efficient and the reliability of liftoff stripping technology, has reduced cost.Above-mentioned feature and advantage obtain more significantly embodying in the drawings and specific embodiments.
Description of drawings
Fig. 1 a is the vertical view of a kind of typical thin film transistor pixel structure of previous technology making;
Fig. 1 b is the sectional view of a kind of typical thin film transistor pixel structure of previous technology making;
Fig. 2 is a kind of typical five masking process flow processs;
Fig. 3 a is the vertical view of pixel after the masking process that forms gate electrode and controlling grid scan line in a kind of typical five masking process is finished;
Fig. 3 b is the sectional view of pixel after the masking process that forms gate electrode and controlling grid scan line in a kind of typical five masking process is finished;
Fig. 4 a is the vertical view of pixel after the masking process that forms gate insulator, active layer and ohmic contact layer in a kind of typical five masking process is finished;
Fig. 4 b is the sectional view of pixel after the masking process that forms gate insulator, active layer and ohmic contact layer in a kind of typical five masking process is finished;
Fig. 5 a is the vertical view of pixel after the masking process that forms source-drain electrode and data scanning line in a kind of typical five masking process is finished;
Fig. 5 b is the sectional view of pixel after the masking process that forms source-drain electrode and data scanning line in a kind of typical five masking process is finished;
Fig. 6 a is the vertical view of pixel after the masking process of formation passivation layer via hole in a kind of typical five masking process is finished;
Fig. 6 b is the sectional view of pixel after the masking process of formation passivation layer via hole in a kind of typical five masking process is finished;
Fig. 7 is a kind of typical four masking process flow processs;
Fig. 8 a is the vertical view of pixel after the masking process that forms gate insulator, active layer, ohmic contact layer and source-drain electrode and data scanning line in a kind of typical four masking process is finished;
Fig. 8 b is the sectional view of pixel after the masking process that forms gate insulator, active layer, ohmic contact layer and source-drain electrode and data scanning line in a kind of typical four masking process is finished;
Fig. 9 a is three masking process flow processs of the present invention;
Fig. 9 b is the vertical view of a kind of thin film transistor pixel structure of three masking process making of the present invention;
Figure 10 a be the present invention for the third time in the masking process resist exposure develop finish after the vertical view of dot structure;
Figure 10 b be the present invention for the third time in the masking process resist exposure develop finish after the sectional view of dot structure;
Figure 10 c is the sectional view of the present invention's dot structure after the passivation layer via hole etching is finished in the masking process for the third time;
Figure 11 a is the vertical view of the present invention's dot structure after photoresist ashing is finished in the masking process for the third time;
Figure 11 b is the sectional view of the present invention's dot structure after photoresist ashing is finished in the masking process for the third time;
Figure 12 a is the sectional view of the present invention's dot structure after the transparent conductive film deposition is finished in the masking process for the third time;
Figure 12 b is the thin portion enlarged drawing at A place among Figure 12 a;
Figure 12 c is the sectional view of the present invention's dot structure after the liftoff stripping technology of photoresist is finished in the masking process for the third time;
Identify among the figure: 1, controlling grid scan line; 2, gate electrode; 3, semiconductor layer; 4, gate insulation layer; 5, data scanning line; 6, source electrode; 7, drain electrode; 8, passivation layer; 9, passivation layer via hole; 10, transparent pixels electrode; 11, be used to constitute the gate electrode teat of memory capacitance; 12, the photoresist of the semi-transparent part of gray tone mask corresponding region; 13, the photoresist of gray tone mask lightproof part corresponding region; 14, thin film transistor channel part.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated: at first, use magnetically controlled sputter method, preparation one layer thickness on substrate
Extremely
The grid metallic film.The material of grid metallic film uses metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, also can use the combination of above-mentioned different materials.Shown in Fig. 3 a and Fig. 3 b, carry out exposure imaging with first mask, carry out chemical etching then, on certain zone of glass substrate, form the pattern of controlling grid scan line 1 and gate electrode 2.
Then, utilize chemical vapor deposited method successive sedimentation thickness on array base palte
Extremely
Gate insulation layer 4 films and thickness
Extremely
Semiconductor layer 3 films (comprising active layer and ohmic contact layer).Gate insulation layer 4 materials are silicon nitride normally, also can use monox and silicon oxynitride etc.Next in order to make source electrode 6 and drain electrode 7, deposition one layer thickness exists on semiconductor layer 3 films
Extremely
Be similar to the film of grid metal.This layer metallic film adopts and the deposit preparation on array base palte of the similar method of grid metallic film.Carry out exposure imaging with first gray tone mask; The gray tone mask is made of complete transmission region, semi-transparent zone and light tight zone.Semi-transparent zone is made of slit that certain orientation and spacing are arranged and fillet; The lightproof part of gray tone mask also can comprise the double-layer films material, and the semi light transmitting part branch comprises thin film material layer, and the light transmission part does not have above-mentioned membraneous material fully.The thin film material layer of semi-transparent part can be a chromium oxide, and the double-layer films material of lightproof part can be chromium or chromium oxide; The zone of no photoresist comprises the part that transparent pixels electrode 10, controlling grid scan line 1 and part are connected with external circuit behind the exposure imaging of described first gray tone mask definition; The zone of reserve part photoresist comprises thin film transistor channel part 14 behind the exposure imaging; The zone that keeps whole photoresists behind the exposure imaging comprises the part that source electrode 6, drain electrode 7, data scanning line 5 and part are connected with external circuit.Carry out etching then and form amorphous silicon island, source electrode 6, drain electrode 7 and data scanning line 5.Carry out photoresist ashing technology then, remove amorphous silicon island place and be used to form photoresist on the part of thin film transistor channel 14, and then carrying out etching formation thin film transistor channel 14, source electrode 6 and drain electrode 7 contact with the two ends of ohmic contact layer respectively.Vertical view after finishing and cross-sectional view are shown in Fig. 8 a and 8b.
At last, with and prepare the similar method of gate insulation layer, on whole array base palte, deposit a layer thickness and exist
Arrive
Passivation layer 8.Its material is silicon nitride normally.Select suitable photoresist to carry out exposure imaging with second gray tone mask, the zone of no photoresist comprises the part of passivation layer via hole 9 behind the exposure imaging of described second gray tone mask definition, the zone of reserve part photoresist comprises the part of transparent pixels electrode 10 behind the exposure imaging, and remainder is the zone that keeps whole photoresists behind the exposure imaging.The photoresist that is used to form the part top of passivation layer via hole 9 behind the exposure imaging is removed fully; The photoresist that is used to form on the part of transparent pixels electrode 10 is partly removed, and forms the photoresist 12 of the semi-transparent part of the gray tone mask corresponding region of thinner thickness, and its shape is identical with the shape of transparent pixels electrode 10; And the photoresist 13 of the gray tone mask lightproof part corresponding region of other parts is kept fully.For example the thickness of the photoresist 12 of the semi-transparent part of gray tone mask corresponding region exists
Arrive
Between, and the thickness of the photoresist 13 of gray tone mask lightproof part corresponding region exists
Arrive
Between.Select suitable photoresist developing liquid concentration and time, also have suitable prebake and back stoving temperature and time, for example between 50 ℃ to 200 ℃ and 0 second to 200 seconds, form the photoresist figure of vertical sidewall.Pattern after finishing is shown in Figure 10 a and 10b.Employing and the similar method of amorphous silicon etching are carried out the passivation layer via hole etching then, form the structure shown in Figure 10 c.Finish after the etching, photoresist is carried out cineration technics, all remove the photoresist 12 of the semi-transparent part of gray tone mask corresponding region, and the photoresist 13 of gray tone mask lightproof part corresponding region still keeps a part of thickness, when photoresist is carried out ashing treatment, the CONTROL PROCESS condition makes the photoresist 13 of residual gray tone mask lightproof part corresponding region form vertical sidewall pattern, after finishing shown in Figure 11 a and 11b.
Next on array base palte, adopt sputtering method deposit one layer thickness to exist
Arrive
Transparent conductive film, as tin indium oxide, indium zinc oxide etc., after finishing shown in Figure 12 a.Because the vertical sidewall pattern of the photoresist 13 of residual gray tone mask lightproof part corresponding region, and when the sputtering sedimentation transparent conductive film, vacuum condition and the electrode and the annex thereof of control sputtering chamber, make so can not deposit transparent conductive film on the sidewall of photoresist 13 of gray tone mask lightproof part corresponding region, the thin portion of sidewall pattern is shown in Figure 12 b.Control the sputtering condition of transparent conductive film simultaneously, for example vacuum tightness is between 0.01Pa to 10Pa, and sputtering power and sputter spacing etc. can prevent photoresist sidewall sections deposit transparent conductive film.In being to use the liftoff stripping technology of photoresist to peel off the photoresist 13 of residual gray tone mask lightproof part corresponding region, deposition transparent conductive film thereon also is removed thereupon.Owing to do not deposit on the sidewall of the photoresist 13 of gray tone mask lightproof part corresponding region and go up transparent conductive film, common photoresist lift off liquid such as acetone, isopropyl alcohol, alcohol or their mixed liquor, just can directly corrode photoresist, and not need to use special stripper that other materials such as transparent conductive film are corroded from the side-walls of the photoresist 13 of gray tone mask lightproof part corresponding region.Be the pattern of the integrality of keeping the transparent pixels electrode pattern and other material, photoresist lift off liquid does not contain acid flux material fully.For peel off fully outside transparent pixels electrode part and the passivation layer via hole photoresist and on the transparent conductive film that adheres to, when carrying out stripping technology, adopt spray, vibration is rocked or method such as ultrasound wave is assisted and carried out.Liftoff peel off finish after, the transparent conductive film in the passivation layer via hole 9 and be retained as the transparent conductive film of transparent pixels electrode.The structure of the thin-film transistor LCD device array substrate of realization shown in Fig. 9 b and Figure 12 c.
By above-mentioned steps, use three mask to finish the making of thin-film transistor array base-plate.Present embodiment only is used for explanation rather than limits method for manufacturing thin film transistor array substrate of the present invention.Part unless otherwise indicated, the present invention is not limited to the detail of foregoing description.Under the prerequisite that does not depart from essential characteristics and core process technology, the present invention also has other specific embodiment.Any modifications and variations that meet feature of the present invention, all within the scope of the present invention.
Claims (12)
1, a kind of method for making of array base palte of Thin Film Transistor-LCD is characterized in that:
At first, provide an insulation transparent substrate; On dielectric substrate, form ground floor metallic film and one deck photoresist successively; Use the pattern of first block of mask definition photoresist, and etching forms the pattern of ground floor metallic film, i.e. gate electrode and controlling grid scan line;
Then, deposition one deck insulating layer of thin-film, one semiconductor layer film and second layer metal film at least on substrate; Coating one deck photoresist on the second layer metal film; Use second mask, promptly first gray tone mask forms the thin film transistor (TFT) silicon island through exposure imaging and etching, utilizes photoresist ashing technology and etching, forms the raceway groove of source-drain electrode and film transistor switch device;
At last, deposition one deck passivation layer film on substrate; Coating one deck photoresist on the passivation layer film; Use the 3rd mask, i.e. second gray tone mask is through the zone of the zone that obtains not having photoresist behind the exposure imaging, reserve part photoresist with keep the zone of whole photoresists; The zone that etching does not have photoresist obtains passivation layer via hole; After finishing etching, photoresist is carried out cineration technics, all remove the photoresist in the zone of reserve part photoresist, remove the photoresist in zone of the whole photoresists of reservation of a part of thickness; Deposition layer of transparent conductive film on array base palte, and in conjunction with liftoff stripping technology, peel off the photoresist that remains, deposited transparent conductive film is also removed thereupon on it, and residual transparent conductive film has just formed the transparent pixels electrode pattern and has been electrically connected with the formation of thin film transistor (TFT) drain electrode by passivation layer via hole.
2, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 1 is characterized in that: described first gray tone mask and second gray tone mask define the zone that keeps whole photoresists behind the zone of reserve part photoresist behind the zone, exposure imaging of no photoresist behind the exposure imaging separately and the exposure imaging respectively; Zone by no photoresist behind the exposure imaging of described first gray tone mask definition comprises the part that transparent pixels electrode, controlling grid scan line and part are connected with external circuit; The zone of reserve part photoresist comprises the thin film transistor channel part behind the exposure imaging; The zone that keeps whole photoresists behind the exposure imaging comprises the part that source electrode, drain electrode, data scanning line and part are connected with external circuit; The part that comprises passivation layer via hole by the zone of no photoresist behind the exposure imaging of described second gray tone mask definition, the zone of reserve part photoresist comprises the part of transparent pixels electrode behind the exposure imaging, and remainder is the zone that keeps whole photoresists behind the exposure imaging.
3, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 1 and 2, it is characterized in that: in described second gray tone mask technology, by selecting the exposure imaging condition and the cineration technics condition of photoresist and the described photoresist of control, make the sidewall of residual photoresist form vertical pattern.
4, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 1 and 2, it is characterized in that: during described deposit transparent conductive film, what adopt is sputtering method, vacuum condition and the electrode and the annex thereof of control sputtering chamber make the photoresist sidewall not have the transparent conductive film deposition.
5, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 3, it is characterized in that: during described deposit transparent conductive film, what adopt is sputtering method, vacuum condition and the electrode and the annex thereof of control sputtering chamber make the photoresist sidewall not have the transparent conductive film deposition.
6, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 4, it is characterized in that: when adopting described liftoff stripping technology, stripper only carries out chemical reaction with photoresist, do not corrode other material that comprises transparent conductive film, the transparent conductive film on the photoresist is peeled off and is removed with photoresist.
7, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 5, it is characterized in that: when adopting described liftoff stripping technology, stripper only carries out chemical reaction with photoresist, do not corrode other material that comprises transparent conductive film, the transparent conductive film on the photoresist is peeled off and is removed with photoresist.
8, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 7 is characterized in that: described stripper is the mixed liquor of acetone, isopropyl alcohol, alcohol or above-mentioned solvent, does not contain acid flux material.
9, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 8, it is characterized in that: described first gray tone mask and second gray tone mask, its lightproof part comprises the double-layer films material, the semi light transmitting part branch comprises thin film material layer, the light transmission part does not have above-mentioned membraneous material fully, the thin film material layer of semi-transparent part is a chromium oxide, and the double-layer films material of lightproof part is chromium or chromium oxide.
10, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 9 is characterized in that: the semi-transparent zone of described first gray tone mask and second gray tone mask includes the slit and the fillet of certain orientation and spacing.
11, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 10, it is characterized in that: described first metal and second metal are molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper, or the combination of above-mentioned different materials.
12, the method for making of the array base palte of a kind of Thin Film Transistor-LCD according to claim 11 is characterized in that: described transparent conductive film is tin indium oxide or indium zinc oxide.
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