CN100514699C - Organic electroluminescence display device - Google Patents
Organic electroluminescence display device Download PDFInfo
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- CN100514699C CN100514699C CNB2004100432425A CN200410043242A CN100514699C CN 100514699 C CN100514699 C CN 100514699C CN B2004100432425 A CNB2004100432425 A CN B2004100432425A CN 200410043242 A CN200410043242 A CN 200410043242A CN 100514699 C CN100514699 C CN 100514699C
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
- H10K59/1275—Electrical connections of the two substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
An organic electroluminescence display device comprises a first substrate including a light emitting area comprising a first electrode, an organic electroluminescence layer and a second electrode stacked one over another and a second substrate including a connection layer for feeding a driving signal to the second electrode. The first substrate has a connection area in which a portion of the second electrode is off set vertically from the light emitting area and connected to the connection layer of the second substrate. The connection area does not overlie the light emitting area.
Description
The cross reference of related application
Here quote the whole of the Japanese patent application submitted on May 15th, 2003 JP2003-136785 number, comprised specification, claims, accompanying drawing and summary.
Technical field
The present invention relates to organic field luminescence (below be called EL) display device, particularly relate to the organic EL display apparatus of composite construction.
Background technology
Existing liquid crystal display is general to use thin, light and flat display device, but because liquid crystal display is controlled the light of transmission by changing liquid crystal orientation, therefore exists to have narrow domain view and this problem of weak response characteristic.On the other hand, the active matrix organic EL display apparatus that has wide domain view and strong response characteristic has in recent years caused people's attention.Because organic EL is a self-emission device, wherein, by when applying electric field from positron cave that anode injects and from the negative electrode injected electrons again in conjunction with the energy that is produced, fluorescent material emission light, therefore the observability of organic EL display element is outstanding, and because it does not use back light, therefore can reduce the consumption of power supply, and expect that can be various device serves as display device, comprises such as portable terminals such as mobile phones.
In this active matrix organic EL display apparatus, in order to improve display performance, need the material that EL element itself is not only arranged and the structure of investigation, and the characteristic of the TFT (thin-film transistor) as switch element is arranged, the structure of equipment, or the like.
Often used multi-crystal TFT in recent years, it has used the polysilicon film with high-mechanic flexibility.Using under the situations as substrate such as glass, plastics, its manufacture process has been used when about 300 ℃ or lower low temperature, the low-temperature process that amorphous silicon is carried out crystallization by irradiating laser, infrared ray etc.
Because the active matrix organic EL display apparatus has used multi-crystal TFT by this K cryogenic treatment manufacturing (below be called low temperature polycrystalline silicon TFT), therefore there are two kinds of structure types: in a kind of structure type, low temperature polycrystalline silicon TFT and organic EL are placed on together (below be called mix displacement structure) on same substrate, and in the another kind of structure type, have low temperature polycrystalline silicon TFT substrate formed thereon (below be called TFT circuit form substrate) and have organic EL substrate formed thereon (below be called organic EL formation substrate) and be bonded to together (below be called composite construction).By low temperature polycrystalline silicon TFT manufacture process and organic EL manufacture process, mix displacement structure and have the advantage that can reliably and easily realize the active matrix organic EL display apparatus, wherein low temperature polycrystalline silicon TFT manufacture process and organic EL manufacture process are as the technology of moulding at present, but have the light-emitting area of organic EL and the ratio of the area of each image component (below be called aperture than) and especially under the situation that image pitch diminishes, can seriously reduce this shortcoming, and because substrate surface is divided into a plurality of low temperature polycrystalline silicon TFT zone and a plurality of zones that wherein are formed with organic EL of wherein being formed with, organic EL layer is subjected to this shortcoming that influences of the depression of TFT and ledge.Attempt compensates the minimizing of aperture ratio by the luminous quantity that increases the organic EL per unit area, can cause producing such as the life-span that shortens organic EL and reduces shortcoming such as luminous efficiency.The shortcoming of mixing displacement structure is, because its structure makes to be difficult in its inner diffraction grating etc. that forms, to be used for launching effectively the light from the organic EL layer of substrate outside.
Composite construction can be eliminated and mix these shortcomings that displacement structure had.First prior art that is used for composite construction, be by using indium rod etc. the TFT circuit to be formed substrate and organic EL forms the coherent technology of substrate as adhesive, for example, publish (referring to Fig. 4 of that piece document) in 2001-117509 number at Japan Patent.Fig. 1 is the profile according to the active matrix organic EL display apparatus of this prior art.It is formed thereon that TFT circuit formation substrate 101 has TFT120, and its source electrode 125 is electrically connected to interconnection layer 109.On the other hand, organic EL forms substrate 102 and has transparency electrode 110, organic EL layer 104 and negative electrode 111, and wherein negative electrode 111 is that order each image component formed thereon flatly has carried out subregion according to this.Use indium rod 130 these two substrates to be sticked together, so that TFT120 surface formed thereon is arranged and have organic EL layer 104 substrates formed thereon to face mutually as adhesive.And the TFT circuit is formed the interconnection layer 109 of substrate 101 with indium rod 130 and the negative electrode 111 of organic EL formation substrate 102 is connected electrically to together mutually.At this moment, can apply driving voltage, make organic EL layer 104 form luminous each negative electrode 111 that forms substrate 102 to organic EL of substrate 101 1 sides from the TFT circuit.And ideally, can make the aperture ratio of this active matrix organic EL display apparatus approach 100%.
Second prior art that is used for composite construction, be by using anisotropy conductiving glue or anisotropic conductive film that the image component electrode of TFT circuit formation substrate and the negative electrode of organic EL formation substrate are connected with each other, thereby TFT circuit formation substrate and organic EL formation substrate are sticked together, for example, publish (referring to Fig. 5 of that piece document) in 2002-082633 number at Japan Patent.Fig. 2 is the profile according to the active matrix organic EL display apparatus of this prior art.The TFT circuit forms substrate 201 and is recessed to form in wherein, and wherein is formed with the micro-structural 220 of TFT etc., and is suitable with this depression, and interconnection layer 209 is drawn by the through hole in the protectiveness insulation film 240.Organic EL forms substrate 202 and has organic EL layer 204 and negative electrode 211, be deposited in each opening that forms in the insulating barrier 205 on the transparency electrode 210, and negative electrode 211 protrudes in each the opening outside in the insulating barrier 205 almost flatly.The TFT circuit forms substrate 201 and organic EL formation substrate 202 sticks together by anisotropy conductiving glue or anisotropic conductive film (they are all not shown in the drawings), so that interconnection layer 209 is faced mutually with negative electrode 211.
At the organic EL display apparatus of composite construction, the problem that the present invention attempts to solve is as follows.
First problem is that the organic EL display apparatus of existing composite construction is poor to the holding capacity from the pressure of device external.Since organic EL layer and organic EL form the negative electrode of substrate form to the TFT circuit substrate interconnection layer be connected on the direction perpendicular to the first type surface of two substrates overlapped, therefore during the Combined Processing in manufacture process, perhaps when reality is used display device, under the situation of exerting pressure on the surface of display device, display device can possibly can't show because of being short-circuited between negative electrode that forms substrate at organic EL and the anode.This is to cause owing to organic EL layer has formed very thin vapor-deposited film.Because the fragility of film quality, the power that thin vapor-deposited film is applied from the outside is easily crushed.
Second problem is to be not easy to realize cheap and reliably with two electric being connected with each other of substrate.Because each image component must separate effect in display device, so organic EL forms the negative electrode of substrate and interconnection layer that the TFT circuit forms substrate and must be protected in being electrically connected of each image component.In order for example to realize it by employed indium rod in first prior art of above-mentioned composite construction, must be the long or shorter indium rod of 0.2mm with thousands of or more a plurality of profile diameter with 0.2mm or shorter spaced apart on flat substrate, so that they do not contact with each other between contiguous image component.
Summary of the invention
Therefore target of the present invention is to propose can to prevent to be under pressure the organic EL display apparatus of the composite construction that damages, wherein respectively form substrate and couple together by above-mentioned pressure, this display device can be cheaply with reliably with two electric being connected with each other of substrate.
A kind of organic electroluminescent display device that the present invention proposes comprises:
First substrate comprises the light-emitting zone of being made up of first electrode, organic field luminescence layer and second electrode stacked successively; Second substrate comprises being used for the feed drive signal to articulamentum, the TFT of described second electrode and the drive circuit that is used to drive described TFT,
Wherein, described first substrate has join domain, is vertical shift and described articulamentum that be connected to described second substrate at a part and the described light-emitting zone of second electrode described in this join domain,
Wherein, described join domain be not positioned at described light-emitting zone above,
Wherein, described first substrate has depression, is used to deposit moisture absorbent, and relatively forms described depression with the zone of the described drive circuit that described second substrate is wherein arranged,
Wherein, on described second substrate, provide hermetic unit, cover the side surface of described first substrate, and
Wherein, the space between described first substrate and described second substrate is to use subatmospheric inert gas to seal.
Since organic EL form substrate organic EL layer the formation zone and be used for that organic EL is formed the negative electrode of substrate and TFT circuit and form the electric join domain that is connected with each other of substrate and be spaced from each other, and in this join domain, be formed at from comprising that the negative electrode that organic EL layer organic EL formed thereon forms on the outstanding outstanding syndeton in the surface of substrate contacts with interconnection layer, and this join domain to the upright projection on transparent substrates surface not with the light-emitting zone overlaid, therefore can prevent organic EL layer by pressure infringement, thereby under good productivity, realize having the organic EL display apparatus of resisting external pressure formidably and having high reliability from device external.
Description of drawings
Fig. 1 is the profile according to the organic EL display apparatus of prior art.
Fig. 2 is the profile according to the organic EL display apparatus of another prior art.
Fig. 3 is the profile according to the organic EL display apparatus of first embodiment of the invention.
Fig. 4 is the profile of the manufacture process of the organic EL that is used for key-drawing 3 manufacture process that forms substrate.
Fig. 5 is the profile in Fig. 4 manufacture process afterwards.
Fig. 6 is the profile in Fig. 5 manufacture process afterwards.
Fig. 7 (a) is the profile along the line A-A of Fig. 6, and Fig. 7 (b) is the profile along the line B-B of Fig. 6.
Fig. 8 is another profile in the manufacture process of Fig. 4.
Fig. 9 is used for explaining that organic EL according to second embodiment of the invention forms the profile of manufacture process of the manufacture process of substrate.
Figure 10 is the profile in Fig. 9 manufacture process afterwards.
Figure 11 (a) is the profile along the line C-C of Figure 10, and Figure 11 (b) is the profile along the line D-D of Figure 10.
Embodiment
Tell about some embodiments of the present invention below with reference to the accompanying drawings.In order to guarantee the cleaning of figure, these figures show 2 * 2 matrix structures of image component, and the TFT structure that is used to provide the TFT circuit is simplified.
Fig. 3 is the profile according to the organic EL display apparatus of first embodiment of the invention.As shown in Figure 3, in the organic EL display apparatus of this embodiment, the organic EL formation substrate 2 that will have light-emitting zone by hermetic unit 3 seals in the marginal portion around their with the TFT circuit formation substrate 1 with TFT20, keep specific interval between them by supporting structure 18 simultaneously, light-emitting zone wherein has transparency electrode 10, organic EL layer 4 and negative electrode 11 are stacked and are got up to be used for glass, each image component on the transparent substrates 2 ' such as plastics, and TFT20 wherein is formed for making the luminous image component circuit of organic EL layer 4, the drive circuit (not shown) that is used for drive TFT 20, the interconnection layer (image component electrode) 9 of drawing the source electrode of the TFT20 on being formed at substrate 1 ' etc.Negative electrode 11 forms join domain, is used for expanding to the upper surface of giving prominence to syndeton by the part with it and is connected electrically to interconnection layer 9.Organic EL forms the moisture absorbent storage area 12 that substrate 2 has moisture absorbent deposited 6.Moisture absorbent storage area 12 is formed at the relative position that the TFT circuit forms the TFT drive circuit of substrate 1.Be used to import and be used to select with the splicing ear (not shown) of the signal of drive TFT and be used to be applied to anode on the transparency electrode 10 that organic EL forms substrate 2 etc., be formed at the TFT circuit and form on the substrate, and the input anode voltage special electrodes that forms substrate from the TFT circuit puts on the transparency electrode 10 by projection 14 and the anode connecting wiring 13 that is formed at organic EL and forms on the substrate 2.
Realize that the TFT20 TFT circuit formed thereon that forms the image component circuit forms substrate 1, can use such as being used to utilizes laser anneal method or lamp method for annealing amorphous silicon to be carried out the polysilicon formation technology of micro-crystallization, utilized the prior aries such as formation, composition and etching technique of the film of semiconductor fabrication, and other technologies.Specifically, for example, handle, internal layer silicon oxide layer 21 is formed on the transparent this substrates 1 ' such as non-alkali glass substrate of picture, and handle, also form amorphous silicon film thereon by CVD by CVD.
And then, form at the polysilicon that has carried out using doping impurity to handle and to handle and after laser annealing processing etc. handles, be patterned into intended shape and, form formation polysilicon 7 in the zone by use at the TFT of appointment as the etch processes of the photoresist of mask.Then, form the gate insulating film (not shown) of forming by for example silicon oxide film, then by composition by for example WSi (tungsten silicide) film that sputtering method forms, form gate electrode 8 thereon.Then, use gate electrode 8, form TFT20, by polysilicon 7 provides and conduction type by the given conductivity type opposite of the impurity that mixes in first doping treatment by mixing as mask.On TFT20, form the interlayer film of making by Si oxide 22 by the CVD method, and, on grid, source electrode and the drain region of multi-crystal TFT, form contact hole (only showing the contact hole of source area among the figure) respectively by lithography technique and etching technique.And then, after by metal interconnected aluminium films of formation such as sputtering methods, it is patterned into intended shape by using lithography technique and etching technique, form interconnection layer, make the processing procedure that the TFT circuit forms the image component circuit of substrate 1 thereby finished.Be used to drive image component circuit etc. drive circuit manufacturing can with make this image component circuit and carry out simultaneously.
Then, tell about the method that organic EL forms substrate 2 made from reference to figure 4～6.Fig. 4～6 are plane graph, according to being used to explain that the manufacture process that organic EL according to this embodiment forms substrate manufacture method distributes in proper order.In Fig. 4～6, be equivalent to that the parts of those parts are endowed identical label among Fig. 3, and suitably saved their repeatability is told about.At first, prepare non-alkali glass substrate, be used for the transparent substrates that the TFT circuit forms substrate 1 or is equivalent to it, wherein formed moisture absorbent storage area 12 by engraving method etc. in advance, be used to deposit moisture absorbent 6.
On this transparent substrates 2 ', form the transparent conductive film of ITO etc. by sputtering method etc. after, by disclosed lithography technique and etching technique are carried out composition, thereby in the image component zone, formed transparency electrode 10, so that form image component with the shape of matrix with intended shape.Then, on transparent substrates 2 ', form outstanding syndeton 5, so that the part of transparency electrode 10 is placed between it and the transparent substrates 2 '.And form supporting structure 18 (Fig. 4) in the marginal portion of transparent substrates 2 ' simultaneously.
In this process, after on the substrate all surfaces, having formed silicon oxide film by sputtering method or CVD method, form the photoresist that is patterned into intended shape more thereon, and use photoresist to be mask, combination by wet etch process, dry-etching method or two kinds of methods comes the etching silicon oxidation film, thereby can realize these structures.In addition, by use have form on transparency electrode 10 substrate formed thereon have the photosensitive resin of desired pattern and in about 200 ℃ high temperature inert gas environment the method by heating to bake hard photosensitive resin, also can realize these structures.And as shown in Figure 3, form at least one side in the both sides of this page outstanding syndeton 5 transversely, make it because more away from the surface of transparent substrates 2 ', thereby be tilted to the inside of outstanding structure 5.Thereby this can realize away from the center of light transmission region more by control etching condition or the transmission performance that reduces peripheral part of the light transmission region of employed mask in the composition photosensitive resin to a greater degree.
Afterwards, the hole injecting layer of open part as the organic EL structure, hole transmission layer, luminescent layer, electron transfer layer etc., form successively according to its necessity, and form organic EL layer 4, so that be connected between the outstanding structure 5 that transversely adjoins each other of this page (Fig. 5).This organic EL layer 4 is not limited to described layer structure, for example, can be single luminous layer structure.And, in order to realize having the organic el device of panchromatic demonstration, formed described luminescent layer, so that by using three kinds of organic EL light-emitting materials, make the light of each image component emission different colours corresponding to three primary colors.
Then, by evaporation coating technique, formed the negative electrode of forming by lithium (Li) or lithium compound and aluminium (Al) 11 (Fig. 6) for each image component.As shown in Figure 6, the negative electrode 11 of each image component independently is formed on the organic EL layer 4, and the last flat part of one of two outstanding syndetons 5 that transversely adjoin each other at this page (right side among Fig. 6 that) is covered in expansion.
At this moment, negative electrode 11 expands to join domain from light-emitting zone, so that pass the inclined side of outstanding syndeton 5.This has and improves the function that negative electrode 11 is connected to the film homogeneity of outstanding syndeton 5, also has simultaneously at this page or leaf transversely to make light-emitting zone and the separated function of join domain.Negative electrode 11 not only serves as negative electrode, and serves as wiring, is used to be connected electrically to the interconnection layer that the TFT circuit that is positioned on the outstanding syndeton 5 forms substrate.
In the processing procedure that forms negative electrode 11, simultaneously to have formed anode connecting wiring 13 with negative electrode 11 identical materials.Anode connecting wiring 13 forms and is electrically connected, and makes and can apply same anode voltage for all transparency electrodes 10 transversely that are distributed in this page, as shown in Figure 6.And then electric being connected with each other of appointment electrode for anode connecting wiring 13 and TFT circuit formation substrate 1 forms on anode connecting wiring 13 by for example silver (Ag) formed protruding 14.Fig. 7 shows along the profile of the line B-B of the line A-A of Fig. 6 (a) and Fig. 6 (b).In Fig. 7, the assembly that is equivalent among Fig. 6 is endowed identical label.
Organic EL display apparatus as shown in Figure 3 is to finish by the manufacture process of finishing this embodiment, wherein the manufacture process of this embodiment is by using the hermetic unit 3 of the short animi resin of ultraviolet, form the surface and organic EL layer forms under the surperficial relative situation at TFT, seal and finish form neighboring that substrate 1 and organic EL form substrate 2 by the formed TFT circuit of above-mentioned processing.As shown in Figure 3, outstanding syndeton 5 is higher than negative electrode 11 in light-emitting zone apart from the height on the surface of transparent substrates 2 ' apart from the height on the surface of transparent substrates 2 '.And in the join domain that is electrically connected with interconnection layer 9, be formed at the negative electrode that forms on the upper surface of the outstanding syndeton 5 of the surface of substrate 2 giving prominence to away from organic EL and contact with interconnection layer 9.Therefore, even exert pressure by forming substrate 1 from the outside to the TFT circuit, make it change shape forming substrate 2 near organic EL, organic EL layer can not suffer because form that substrate comes in contact and the infringement that causes with the TFT relative with it yet.And wherein be formed with the light-emitting zone of organic EL layer 4 and be used for forming the join domain that the interconnection layer 9 of substrate 1 is electrically connected and be separated from each other at image component with the TFT circuit.
And because the side that is formed with negative electrode 11 of the outstanding syndeton 5 that forms is towards the inner inclination of the surperficial farther outstanding syndeton 5 of distance transparent substrate 2 ', thus join domain to the surperficial upright projection of transparent substrates 2 ' not with the light-emitting zone overlaid.Therefore, the pressure from the outside does not arrive organic EL layer.Because above-mentioned factor, the organic EL layer display device of this embodiment has the feature of stronger opposing external pressure.
And then, carry out encapsulation process, so that sealed space is filled the inert gas that passes through step-down between two substrates.When organic EL display apparatus worked in user's the usual living environment, the pressure of this seal cavity just always was lower than the pressure of atmosphere.Specifically, the pressure of seal cavity will be equal to or less than 0.7 atmospheric pressure (=710hPa).Because the difference between the pressure of atmosphere and the pressure of seal cavity, described display device will remain on its surface and be pushed this state equably downwards by the pressure of atmosphere.Just because this, electric the interconnecting that forms at the organic EL of each image component between the interconnection layer 9 that the negative electrode 11 that forms on the outstanding syndeton 5 of substrate 2 and TFT circuit form substrate 1 keeps finely.
The outstanding syndeton 5 of each image component does not as shown in Figure 4 need by separated, but can form the shape of straight line on the vertical direction of this page.Perhaps can perhaps form the shape of grid in the shape that transversely it is formed straight line of this page.And in described in the above, before the organic EL display apparatus of making this embodiment, formed the moisture absorbent storage area 12 that is used to deposit moisture absorbent 6 in advance in transparent substrates 2 ', this zone 12 also can be formed between any above-mentioned processing procedure that is used to form organic EL layer 4.
And owing to make that according to the composition of the organic EL display apparatus of the embodiment of the invention its relative atmospheric pressure of interior pressure is negative value in all working state and environment, therefore applied the pressure of homogeneous to entire equipment, this makes the organic EL with high reliability of each image component form the negative electrode of substrate and electric the interconnecting of interconnection layer that the TFT circuit forms substrate.
And owing to providing the moisture absorbent storage area for organic EL display apparatus of the present invention, and further provide along substrate groove on every side, the low humidity that therefore in the organic EL display apparatus of composite construction, can keep seal cavity, and then the seal cavity in the enlarged area, keep the low humidity of device interior and the moisture absorption effect of moisture absorbent is expanded to whole device interior equably, thereby and prevented the deterioration of organic EL display apparatus aspect humidity characteristic.
And owing to, therefore can realize high efficiency organic EL display apparatus for the organic EL display apparatus according to the embodiment of the invention provides high efficiency ray structure.
Fig. 9 and Figure 10 are used to explain the plan view that forms the manufacturing processing sequence of substrate according to the organic EL of second embodiment of the invention.Figure 11 (a) is the profile along the line C-C of Figure 10, and Figure 11 (b) is the profile along the line D-D of Figure 10.
In Fig. 9～11, the assembly that is equivalent to those assemblies in Fig. 3～6 is endowed identical label, and has suitably saved their repeatability is told about.The first embodiment part that this embodiment is different from described in Fig. 1～4 is, provides groove 15 for organic EL forms substrate 2, forms from the two ends along transparent substrates 2 ' moisture absorbent storage area 12 on every side; With diffraction grating 16, be formed between transparency electrode 10 and the transparent substrates 2 ', and be to use adhesive phase 17 that organic EL is formed the negative electrode 11 of substrate 2 and interconnection layer 9 that the TFT circuit forms substrate 1 sticks together.
Groove 15 is to form when forming moisture absorbent storage area 12.By the groove 15 that provides, make the sealing gas space of organic EL display apparatus bigger.When taking place to absorb moisture release from the intrusion of the moisture of the hermetic unit around the substrate and/or from the institute of substrate surface, the moisture of absolute quantity as much makes that in bigger sealing gas space the pressure of steam is lower.
Therefore, groove 15 has the effect that the characteristic that prevents the EL organic layer obtains worsening because of moisture.The moisture absorption effect with moisture absorbent 9 of having groove 15 in whole sealing gas space, spread more even this function.Because this, only place moisture absorbent by single position at organic EL display apparatus, for example, be formed at wherein certain regional relative position place with the drive circuit that has the TFT circuit to form substrate 2, can be effectively its moisture absorption effect be diffused into whole sealing gas space, and helps to make this device miniaturization like this.
Diffraction grating 16 has raising from the luminous quantity of substrate outside and effect from the ratio of the luminous quantity of transparency electrode 10.Diffraction grating 16 is realized by for example following processing procedure.
At first, photoresist is put on transparent substrates 2 ', and by utilizing the interference fringe band that optical path difference produced between the laser beam that is decomposed by half mirror etc. to form ribbon or island-shaped pattern that spacing has the hundreds of nanometer.Afterwards, by dry etching technology, the photoresist that uses this pattern etches into transparent substrates 2 ' among the pattern of expectation as mask.Then, after removing photoresist,, just will be formed in the film on the transparent substrates 2 ' such as higher materials of refraction coefficient such as for example silicon nitrides by form technology such as films such as CVD methods.And then, by the surface of dark etching silicon nitride film or the surface of mechanical polishing silicon nitride film, make the surperficial flattening of transparent substrates 2 ', on the surface of transparent substrates 2 ', form described reflecting grating 16 then.
After forming diffraction grating, the manufacture process that forms substrate according to the organic EL of this embodiment is identical with the manufacture process of first embodiment of Fig. 4～6.
That is to say, after on transparent substrates 2 ', having formed transparency electrode 10 and outstanding syndeton 5 (Fig. 9), organic EL layer 4, negative electrode 11 and anode connecting wiring 13 etc. have been formed, and arranged projection 14 (Figure 10), and therefore finished the manufacture process that forms substrate according to the organic EL of this embodiment.
Form the manufacture process of substrate according to the TFT circuit of this embodiment just the same with the manufacture process that TFT circuit according to first embodiment forms substrate.
Encapsulation process among this embodiment is carried out when introducing inert gas between TFT circuit formation substrate 1 and organic EL formation substrate 2 in atmospheric pressure environment, wherein all provides such as conductive adhesive layers such as for example anisotropic conductive film between them for described substrate 1 and 2.Because organic EL forms between the interconnection layer 9 that negative electrode 11 on the outstanding syndeton 5 of substrate 2 and TFT circuit form substrate 1 bonding and be electrically connected together with adhesive phase 17, therefore can keep the seal cavity of organic EL display apparatus under the atmospheric pressure, and under atmospheric pressure environment, carry out seal operation.
In sum, just realized according to the organic EL display apparatus of the embodiment of Figure 11.Because comparing with the organic EL display apparatus of first embodiment of Fig. 3, the organic EL display apparatus of this embodiment has groove 15, make the humidity in the space between two substrates be difficult to rise, therefore can prevent that organic EL layer from obtaining worsening because of the influence of moisture, thereby and realize the organic EL display apparatus of long-life and high reliability.
Be used for effectively emission and not only be confined to aforesaid diffraction grating from this structure (efficiently launching photo structure) of the light of the organic EL layer of substrate outside, and can be to have utilized irreflexive scattering layer on the low roughness surface, or compare low refraction coefficient layer with lower refraction coefficient with the transparent substrates 2 ' of for example celelular silica (Si oxide) etc.
Although above to the preferred embodiment that is based on it of telling about of the present invention, but organic EL display apparatus of the present invention not only is confined to the various embodiments described above, and any organic EL display apparatus that carries out various modifications under the situation that does not change purport of the present invention still falls within the scope of the invention.For example, the organic EL display apparatus of this application not only is confined to the liquid crystal display of active matrix type, and can be the organic EL display apparatus of static drive type etc.
Claims (7)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP136785/2003 | 2003-05-15 | ||
| JP2003136785A JP2004342432A (en) | 2003-05-15 | 2003-05-15 | Organic EL display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1551695A CN1551695A (en) | 2004-12-01 |
| CN100514699C true CN100514699C (en) | 2009-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100432425A Expired - Fee Related CN100514699C (en) | 2003-05-15 | 2004-05-14 | Organic electroluminescence display device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7057340B2 (en) |
| JP (1) | JP2004342432A (en) |
| KR (1) | KR100707544B1 (en) |
| CN (1) | CN100514699C (en) |
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| KR100611766B1 (en) * | 2004-08-24 | 2006-08-10 | 삼성에스디아이 주식회사 | Method of manufacturing thin film transistor |
| KR100642490B1 (en) * | 2004-09-16 | 2006-11-02 | 엘지.필립스 엘시디 주식회사 | Organic electroluminescent device and manufacturing method thereof |
| KR101096719B1 (en) * | 2004-12-30 | 2011-12-22 | 엘지디스플레이 주식회사 | Organic Electroluminescence Display Device And Method For Fabricating The Same |
| JP4513963B2 (en) * | 2005-01-26 | 2010-07-28 | セイコーエプソン株式会社 | Electro-optical device manufacturing method and electronic apparatus |
| JP4706287B2 (en) * | 2005-03-11 | 2011-06-22 | セイコーエプソン株式会社 | Organic EL device and electronic device |
| US8138502B2 (en) | 2005-08-05 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
| JP5354140B2 (en) * | 2005-10-14 | 2013-11-27 | 凸版印刷株式会社 | Large display panel |
| KR101202035B1 (en) * | 2005-12-12 | 2012-11-16 | 엘지디스플레이 주식회사 | Light Emitting Diode and Method for preparing the same |
| TWI271120B (en) * | 2005-12-20 | 2007-01-11 | Au Optronics Corp | Organic electroluminescent device |
| KR100914784B1 (en) * | 2006-05-17 | 2009-08-31 | 엘지디스플레이 주식회사 | Light emitting device and fabrication method of the same |
| KR101254644B1 (en) * | 2006-06-30 | 2013-04-15 | 엘지디스플레이 주식회사 | Organic electro-luminescence dispaly and fabricating method tererof |
| US7714535B2 (en) * | 2006-07-28 | 2010-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| KR100805151B1 (en) * | 2006-08-04 | 2008-02-21 | 삼성에스디아이 주식회사 | Semiconductor device and manufacturing method thereof |
| US20080143248A1 (en) * | 2006-12-15 | 2008-06-19 | Canon Kabushiki Kaisha | Organic light emitting apparatus and method of producing the same |
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| US8410685B2 (en) * | 2008-09-01 | 2013-04-02 | Sharp Kabushiki Kaisha | Organic electroluminescent panel, organic electroluminescent display, organic electroluminescent lighting device, and production methods thereof |
| US8610155B2 (en) | 2008-11-18 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| WO2010079640A1 (en) * | 2009-01-07 | 2010-07-15 | シャープ株式会社 | Organic electroluminescence display device and method for producing the same |
| US8576209B2 (en) | 2009-07-07 | 2013-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR20110007654A (en) * | 2009-07-17 | 2011-01-25 | 엘지디스플레이 주식회사 | Organic EL device and method of manufacturing same |
| US8599118B2 (en) | 2011-02-16 | 2013-12-03 | Global Oled Technology Llc | Chiplet display with electrode connectors |
| JP2013025972A (en) * | 2011-07-20 | 2013-02-04 | Sumitomo Chemical Co Ltd | Display device and manufacturing method thereof |
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| CN106968392A (en) * | 2016-10-27 | 2017-07-21 | 厦门腾月光电科技有限公司 | Luminous building materials |
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| JP2961432B2 (en) * | 1990-05-28 | 1999-10-12 | 株式会社タツノ・メカトロニクス | Heliport refueling equipment |
| JP3530362B2 (en) * | 1996-12-19 | 2004-05-24 | 三洋電機株式会社 | Self-luminous image display device |
| JP2001117509A (en) | 1999-10-14 | 2001-04-27 | Nippon Hoso Kyokai <Nhk> | Organic EL display |
| JP3840926B2 (en) | 2000-07-07 | 2006-11-01 | セイコーエプソン株式会社 | Organic EL display, method for manufacturing the same, and electronic device |
| JP2003084684A (en) * | 2001-09-13 | 2003-03-19 | Sony Corp | Display device and its manufacturing method and electronic equipment |
| KR100834342B1 (en) * | 2001-12-29 | 2008-06-02 | 엘지디스플레이 주식회사 | Active matrix organic electroluminescent device and manufacturing method thereof |
| JP4373086B2 (en) * | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | Light emitting device |
-
2003
- 2003-05-15 JP JP2003136785A patent/JP2004342432A/en active Pending
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2004
- 2004-05-05 US US10/838,203 patent/US7057340B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
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| JP2004342432A (en) | 2004-12-02 |
| US7057340B2 (en) | 2006-06-06 |
| CN1551695A (en) | 2004-12-01 |
| KR100707544B1 (en) | 2007-04-13 |
| US20040227459A1 (en) | 2004-11-18 |
| KR20040098593A (en) | 2004-11-20 |
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