CN100507095C

CN100507095C - Dipping type silicon-piece making method

Info

Publication number: CN100507095C
Application number: CNB2007100899012A
Authority: CN
Inventors: 高文秀
Original assignee: Individual
Current assignee: Individual
Priority date: 2006-12-31
Filing date: 2007-03-20
Publication date: 2009-07-01
Anticipated expiration: 2027-03-20
Also published as: CN101070620A

Abstract

In the high purity argon environment, fix one slab which is smeared with remover onto the fixer. Make sure that the side which is smeared with remover dip into the liquid silicon parallely, heize the slab and refrigerate it quickly to form a silicon layer outside the remover layer; the silicon layer and the remover layer break away and come into being silicon slice. Anneal it under the protection of the argon in the anneal stove after the silicon layer is formed. The component of the slab is zircon alba or hafnium oxide. Make sure the temperature of the liquid silicon is between 1425 and 1480 Deg.C; abd warm-up the slab to make sure the temperature between 800 and 1000 Deg,C before dip into the liquid silicon. The depth of dip into the liquid silicon is 0.3-0.7 mm. the time is 0.3-0.5s. and the thickness of the silicon layer is 100-400mum. Then remove the slab into the flowing argon cooling system after dip into the liquid silicon. This art consumes time shortly, no silicon be wasted, less tache,and has a high production efficiency.

Description

Dipping type silicon-piece making method

Technical field

The invention belongs to the silicon chip processing technique field, particularly a kind of dipping type silicon-piece making method.

Background technology

The silicon chip microtomy of main flow is the yarn cutting machine that adopts Japan and Switzerland to produce in the world at present, its core is (can reach 4000 circles now at most equally spacedly on four main drive shafts with the light gage wire that a diameter is 0.10-0.18mm, promptly once can cut 4000 silicon chips), then with the slowly close steel wire of silicon ingot, rely on the friction between steel wire and silicon ingot to come " mill " disconnected silicon ingot, realize section.Technician according to Sharp company introduces, and they can cut the thick silicon sheet of 120 μ m.But there are following problems in this traditional technology: saw kerf almost with silicon chip with thick, that is to say, material will be wasted half, can only cut out the silicon chip of 500g such as the silicon material of 1kg, remaining 500g has then become the mixture that callable hardly silica flour adds abrasive material, in case and the steel wire broken string, the silicon ingot that is cutting has just become the double-edged fine-toothed comb shape waste product as combing one's hair, certain risk is arranged, and resource utilization is lower.

Summary of the invention

The object of the invention is to provide a kind of technology weak point consuming time, nothing waste silicon materials, process procedure is few, production efficiency is high dipping type silicon-piece making method.

For reaching above-mentioned purpose, the present invention is by the following technical solutions: dipping type silicon-piece making method, in the high-purity argon gas environment, the opposite face that one side is scribbled the flat board of remover is fixed on the fixer, make dull and stereotyped parallel the dipping in of remover face get liquid-state silicon, rise dull and stereotyped and quick cooling process, outside dull and stereotyped parting-agent layer, form one deck silicon layer; Silicon layer and parting-agent layer break away from the formation silicon chip.

Dip in and get liquid-state silicon and after cooling forms silicon layer, in annealing furnace, carry out anneal under the argon shield.

Dull and stereotyped material is zirconium dioxide or hafnium oxide, and the liquid-state silicon temperature is controlled at 1425-1480 ℃; Dip in and get the dull and stereotyped preheating that will scribble remover before the liquid-state silicon and make its temperature reach 800-1000 ℃; Dipping in the degree of depth that flat board when getting enters liquid silicon face is 0.3-0.7mm, and dipping in the time of getting is 0.3-0.5s, and the thickness that forms silicon chip is 100-400 μ m.

Dip in to get after the liquid-state silicon flat board is moved to the cooling 6-11 minutes of drying of flowing-type argon gas cooling system, on flat board, form one deck silicon layer.

Dip in and get liquid-state silicon and after cooling forms silicon layer, in annealing furnace, carry out anneal in 1200-1350 ℃ under the argon shield.

In the present invention, at first will clean with high-purity argon gas closed system before the work, and liquid-state silicon is in the sealed high-purity argon atmosphere in the working process, flat board is dipped in get in the process of liquid-state silicon not polluted by outside atmosphere; According to processing requirement, high-purity argon gas keeps certain flow velocity.Flat board fixes with mechanical fastener, promptly the one side of flat board is fixed on the mechanical fastener, and another side scribbles remover.Dipping in the speed and the mode of getting liquid-state silicon is to finish by the automatic control that machinery is set.The flat board that scribbles remover dip in get liquid-state silicon before, at first need it is carried out preheating, make dull and stereotyped temperature reach 800-1000 ℃.Dipping in when getting liquid-state silicon, flat board is taked the parallel mode of getting of dipping in, formed silicon layer thickness by the temperature of liquid-state silicon, dip in the mode of getting, plate temperature and environmental stress and wait and control, this method liquid-state silicon temperature is controlled at 1425-1480 ℃, dipping in the degree of depth that flat board when getting enters liquid silicon face is 0.3-0.7mm, and dipping in the time of getting is 0.3-0.5s, according to the difference of these processing parameters, can form the silicon chip of different thickness on flat board, its thickness range is 100-400 μ m.

Since in whole process the process time short, control and dip in the speed of getting liquid-state silicon and dip in the degree of depth of getting by the machine automatic control component is set, thereby can increase substantially productivity; Control the thickness that forms silicon chip by liquid-state silicon temperature, the parameters such as temperature of dipping in the speed of getting and pre-flat plate heat, according to different needs, the silicon chip of generation different thickness; Dipping in what get in the technological process is liquid-state silicon, dips in to solidify after getting liquid-state silicon, and silicon materials directly solidify on the flat board, do not cause the phenomenon of waste silicon materials, have farthest utilized silicon materials; Dipping in when getting liquid-state silicon, liquid-state silicon has guaranteed that also liquid-state silicon is not contaminated in the high density argon gas atmosphere, and environment forms shielding effect to external world simultaneously, has therefore controlled the release of objectionable impurities, reduces its pollution to environment.

Description of drawings

Fig. 1 dips in the synoptic diagram of getting liquid-state silicon for dull and stereotyped being fixed on the mechanical fastener;

Figure 2 shows that the synoptic diagram that on flat board, forms silicon chip.

Wherein, 1-mechanical fastener, 2-zirconium dioxide or hafnium oxide flat board, 3,6-thermal insulation layer, 4-liquid-state silicon, 5-temperature controllable crucible, 7-argon filling pore, 8-production well, 9-remover, 10-form silicon chip.

Embodiment

Dipping type silicon-piece making method, its concrete steps, structure, feature and function thereof are described in detail as follows:

At first total system has been passed through the cleaning repeatedly of high-purity argon gas, and remain in the high-purity argon gas, add the high purity silicon material in the temperature controllable crucible 5 after cleaning then, and heat fused becomes liquid-state silicon, make its temperature be controlled at 1425-1480 ℃, simultaneously coat needed remover on the flat board, get the silicon chip that forms after the liquid-state silicon and take off easily so that dip in, this example is selected the flat board of 125 * 125mm for use, and dull and stereotyped material is zirconium dioxide or hafnium oxide.

Then, as shown in Figure 1, the remover opposite face that scribbles the flat board 2 of remover is fixed on the mechanical fastener and preheating makes its temperature reach 800 ℃, fill high-purity argon gas by applying argon gas joint 7 liquid towards silicon place environment, automatic driver will have dull and stereotyped mechanical fastener and move on the liquid-state silicon liquid level 4, survey the height of liquid silicon face by level sensor, and the data that obtain are transported to monitoring instrument, instrument control mechanical fastener, the dull and stereotyped degree of depth that enters liquid-state silicon of decision; Take the parallel mode of getting of dipping in, make one side that flat board scribbles remover enter liquid level and evenly dip in and get one deck liquid-state silicon with certain speed.Dipping in the present embodiment and getting the degree of depth that the liquid-state silicon flat board enters liquid silicon face is 0.7mm, dips in the time of getting and be 0.5s (dip in the time of getting be meant dull and stereotyped duration of contact of going up remover and liquid-state silicon).

Then, mechanically moving fixer to flowing-type argon gas cooling system carries out temperature control blowing cooling 11 minutes, will form one deck silicon 10 on flat board after cooling, as shown in Figure 2.Its concrete thickness can be determined by processing parameter, 1480 ℃ of the temperature of liquid-state silicon in the present embodiment, and the thickness that obtains is the silicon chip of 400 μ m; Carry out demoulding then, take off silicon chip.

At last,, improve the quality of silicon chip, need in annealing furnace, to carry out anneal in 1300 ℃ under the argon shield for the inside of avoiding forming silicon chip has interior defective etc.

According to above-mentioned steps,, make its temperature reach 930 ℃, 1450 ℃ of the temperature of liquid-state silicon the dull and stereotyped preheating that scribbles remover.Control dull and stereotyped mechanical fastener, make one side that flat board scribbles remover enter liquid level with certain speed and evenly dip in and get one deck liquid-state silicon, the degree of depth that enters liquid silicon face is 0.52mm, and dipping in the time of getting is 0.4s.Mechanically moving fixer to flowing-type argon gas cooling system is dried and was cooled off 7 minutes then, will form one deck polysilicon after cooling on flat board, and the thickness that obtains is the silicon chip of 266 μ m.

According to above-mentioned steps, improve the dull and stereotyped preheating temperature that scribbles remover, make its temperature reach 950 ℃, the temperature of liquid-state silicon still is 1450 ℃.Control dull and stereotyped mechanical fastener, the one side that makes flat board scribble remover enters liquid level with above-mentioned same speed, evenly dips in and gets one deck liquid-state silicon, and the degree of depth that enters liquid silicon face is 0.5mm, and dipping in the time of getting is 0.4s.Mechanically moving fixer to the flowing-type argon gas cooling system cooling of drying then as being above-mentioned cooling time 7 minutes, will form one deck polysilicon on flat board after cooling, the thickness that obtains is the silicon chip of 242 μ m.

According to above-mentioned steps, the flat board that scribbles remover is carried out preheating, it is default the highest 1000 ℃ that its temperature is reached, and the temperature of liquid-state silicon reaches minimum 1425 ℃.Control dull and stereotyped mechanical fastener, make one side that flat board scribbles remover enter liquid level with certain speed and evenly dip in and get one deck liquid-state silicon, the degree of depth that enters liquid silicon face is 0.3mm, and dipping in the time of getting is 0.3s.Mechanically moving fixer to the flowing-type argon gas cooling system cooling of drying then will form one deck polysilicon at cooling time such as above-mentioned 6 minutes on flat board after cooling, the thickness that obtains is the silicon chip of 102 μ m.

Test shows that the present invention compares with traditional handicraft, energy savings not only, and process stabilizing, and make The repeatability of product, high conformity, the yield rate height, significant to large-scale production.

Claims

1, dipping type silicon-piece making method is characterized in that, in the high-purity argon gas environment, the opposite face that one side is scribbled the flat board of remover is fixed on the fixer, make dull and stereotyped parallel the dipping in of remover face get liquid-state silicon, rise dull and stereotyped and quick cooling process, outside dull and stereotyped parting-agent layer, form one deck silicon layer; Silicon layer and parting-agent layer break away from the formation silicon chip.

2, dipping type silicon-piece making method according to claim 1 is characterized in that, dips in and gets liquid-state silicon and after cooling forms silicon layer, carry out anneal under the argon shield in annealing furnace.

3, dipping type silicon-piece making method according to claim 1 and 2 is characterized in that, dull and stereotyped material is zirconium dioxide or hafnium oxide, and the liquid-state silicon temperature is controlled at 1425-1480 ℃; Dip in and get the dull and stereotyped preheating that will scribble remover before the liquid-state silicon and make its temperature reach 800-1000 ℃; Dipping in the degree of depth that flat board when getting enters liquid silicon face is 0.3-0.7mm, and dipping in the time of getting is 0.3-0.5s, and the thickness that forms silicon chip is 100-400 μ m.

4, dipping type silicon-piece making method according to claim 3 is characterized in that, dips in to get after the liquid-state silicon flat board is moved to the cooling 6-11 minutes of drying of flowing-type argon gas cooling system, forms one deck silicon layer on flat board.

5, dipping type silicon-piece making method according to claim 4 is characterized in that, dips in and gets liquid-state silicon and after cooling forms silicon layer, carry out anneal in 1200-1350 ℃ under the argon shield in annealing furnace.