CN100479183C - Pixel structure and organic electroluminescent assembly - Google Patents
Pixel structure and organic electroluminescent assembly Download PDFInfo
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- CN100479183C CN100479183C CNB2007100016071A CN200710001607A CN100479183C CN 100479183 C CN100479183 C CN 100479183C CN B2007100016071 A CNB2007100016071 A CN B2007100016071A CN 200710001607 A CN200710001607 A CN 200710001607A CN 100479183 C CN100479183 C CN 100479183C
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Abstract
The invention provides a pixel structure and an organic electroluminescent assembly, the pixel structure comprises: a substrate including a thin film transistor; a protective layer covering the substrate; the first electrode is formed on the protective layer and comprises a first secondary electrode and a second secondary electrode, and the first secondary electrode is electrically connected with the thin film transistor; the insulating layer covers partial area of the first electrode, and the first secondary electrode and the second secondary electrode exposed out of the first electrode are respectively defined as a first light-emitting area and a second light-emitting area; a pillar disposed on the insulating layer, surrounding the first light emitting region; the first organic light-emitting layer covers the first sub-electrode of the first electrode; the second organic light-emitting layer covers the second secondary electrode of the first electrode; and a second electrode including a first sub-electrode and a second sub-electrode, the first sub-electrode of the second electrode being formed on the first organic light emitting layer and electrically connected to the second sub-electrode of the first electrode to form a series contact region, the second sub-electrode of the second electrode being formed on the second organic light emitting layer.
Description
Technical field
The present invention relates to a kind of in-line luminescence component structure, relate in particular to a kind of dot structure and organic EL component.
Background technology
At present, the full-color demonstration of active formula organic electric exciting light-emitting diode (OLED) panel is made up of the inferior pixel of RGB (RGB), and pixel is to connect an organic electric exciting light-emitting diode assembly by a cluster film transistor circuit to be constituted each time.Because organic electric exciting light-emitting diode belongs to a kind of film assembly of current drives, therefore, existing active Drive Structure has following shortcoming, for example highly energy-consuming, too high, the many dim spot of particulate-sensitive or be not suitable for amorphous silicon film transistor backboard etc.
For solving foregoing problems, for example panel time dot structure utilizes active driving circuit (2T1C at least) structure to drive two or more series type organic electro-luminescence diodes.
Yet, utilize shadow mask (shadow mask) to make the series type organic electro-luminescence diode traditionally, only be suitable for large-sized illumination and use, during small pixel on making panel and inapplicable.In addition, prior art is the application that the organic electric exciting light-emitting diode of large-size or module are together in series and show with as lighting source or literal.
Summary of the invention
The object of the present invention is to provide a kind of dot structure and organic EL component, it can produce minute sized series type organic electro-luminescence diode on the thin-film transistor backboard, to be applied on the inferior pixel in the active formula organic electric exciting light-emitting diode panel.
Dot structure of the present invention comprises: a substrate comprises a thin-film transistor; One protective layer is covered on this substrate; One first electrode is formed on this protective layer, this first electrode comprise one for the first time electrode with one the second time electrode, wherein the electrode first time of this first electrode is electrically connected with this thin-film transistor; One insulating barrier is covered in the subregion of this first electrode, and this first electrode exposes first time, electrode was defined as one first luminous zone and one second luminous zone respectively with electrode for the second time; One column (pillar) is arranged on this insulating barrier, surrounds this first luminous zone; One first organic luminous layer, the first time that is covered in this first electrode is on the electrode; One second organic luminous layer, the second time that is covered in this first electrode is on the electrode; And one second electrode, comprise one for the first time electrode with one the second time electrode, the electrode first time of this second electrode is formed on this first organic luminous layer, and be electrically connected with the electrode second time of this first electrode, touch the district to form a series connection, the electrode second time of this second electrode is formed on this second organic luminous layer.
Dot structure of the present invention comprises: a substrate comprises a thin-film transistor; One protective layer is covered on this substrate; One first electrode is formed on this protective layer, comprises N (N for greater than 2 integer) sub-electrode, wherein one of this first electrode for the first time electrode be electrically connected with this thin-film transistor; One insulating barrier is covered in the subregion of this first electrode, and this N sub-electrode that this first electrode exposes is defined as N luminous zone, one first luminous zone to respectively; At least one column is arranged on this insulating barrier, surrounds this first luminous zone respectively to this N-1 luminous zone; One organic luminous layer is covered on the described luminous zone of this first electrode; And one second electrode, comprise N (N is the integer greater than 2) sub-electrode, be arranged on this organic luminous layer and correspond respectively to described N sub-electrode of this first electrode, wherein the electrode first time of this second electrode is electrically connected and forms a series connection with this first electrode of second luminous zone and touches the district, the electrode second time of this second electrode is electrically connected and forms a series connection with first electrode of the 3rd luminous zone and touches the district, by that analogy, the N-1 sub-electrode of this second electrode is electrically connected and forms a series connection with first electrode of N luminous zone and touches the district.
Organic EL component of the present invention comprises: a substrate; A plurality of first pixels, a plurality of second pixel and a plurality of the 3rd pixel, be arranged on this substrate, wherein each first pixel, second pixel and the 3rd pixel are divided into by column respectively that electricity is connected in series between N pixel and this N time pixel, wherein N is the integer more than or equal to 2, and forms a space between the column between described first pixel, second pixel and the 3rd pixel; And an electrode, be formed on described first pixel, second pixel and the 3rd pixel, wherein be positioned at described N the electrode on time pixel and be electrically connected to each other by this space.
Useful technique effect of the present invention is: because the organic electric exciting light-emitting diode in the panel time dot structure is that (N is an integer by two or more, and series connection organic electric exciting light-emitting diode N 〉=2) is formed, therefore, required drive current can be reduced to original N/one, so the present invention has the power consumption of the thin-film transistor of reduction, reduce dim spot, improve the production qualification rate, and be more suitable for being applied on the amorphous silicon film transistor than prior art, help advantages such as large size panel manufacturing, simultaneously can be because of the panel less operation lifetime that prolongs organic electric exciting light-emitting diode that heats up.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the generalized section of dot structure one embodiment of the present invention.
Fig. 2 A is the schematic plan of dot structure one embodiment of the present invention.
Fig. 2 B is the generalized section of Fig. 2 A along 2B-2B hatching gained.
Fig. 3 is the generalized section of another embodiment of dot structure of the present invention.
Fig. 4 A is the schematic plan of another embodiment of dot structure of the present invention.
Fig. 4 B is the generalized section of Fig. 4 A along 4B-4B hatching gained.
Fig. 5 is the schematic plan of organic EL component one embodiment of the present invention.
Wherein, description of reference numerals is as follows:
10,10 ' dot structure, 20 thin-film transistors, 30 substrates
40 protective layers 50,120 are electrode electrode 60,130,210 second time for the first time
70 first electrodes, 80 insulating barriers, 90 columns
100 first organic luminous layers, 110 second organic luminous layers, 100 ' organic luminous layer
140,140 ' second electrode, 150 source/drain electrodes
The electrode first time of 160 first electrodes is electrically connected with thin-film transistor
170 ' luminous zone, 180 second luminous zones, 170 first luminous zones
190 series connection contact zone 200 pixel cells, 220 metal wires
1 substrate, 2 first pixels, 3 second pixels
6 pixels of 4 the 3rd pixels, 5 columns
7 spaces, 8 electrodes
Embodiment
The invention provides a kind of dot structure, comprise a substrate, a protective layer, one first electrode, an insulating barrier, at least one column, an organic luminous layer and one second electrode.Substrate comprises a thin-film transistor; Protective layer is covered on the substrate; First electrode is formed on the protective layer, and comprises N (N is an integer, and N 〉=2) sub-electrode, wherein one of first electrode for the first time electrode be electrically connected with thin-film transistor; Insulating barrier is covered in the subregion of first electrode, and N the sub-electrode that first electrode exposes is defined as one first luminous zone, N luminous zone, second luminous zone to respectively; Column is arranged on the insulating barrier, and surrounds first luminous zone, N-1 luminous zone, second luminous zone to the respectively; Organic luminous layer is covered on the luminous zone of first electrode; Second electrode comprises N, and (N is an integer, and N 〉=2) sub-electrode, be arranged on the organic luminous layer and correspond respectively to N sub-electrode of first electrode, wherein electrode to the N-1 sub-electrode first time of second electrode is electrically connected and forms a string at least contact zone (for example the electrode first time of second electrode is electrically connected with the electrode second time of first electrode, touches the district to form a series connection) with first electrode of adjacent luminous zone respectively.
See also Fig. 1 and Fig. 2 A, Fig. 2 B, the dot structure when it illustrates N=2 of the present invention with profile and schematic plan respectively.
See also Fig. 1, this is the generalized section of dot structure 10.Dot structure 10 comprise substrate 30, a protective layer 40, that comprises a thin-film transistor 20 comprise one for the first time electrode 50 with one for the second time first electrode 70, an insulating barrier 80, a column 90, one first organic luminous layer 100, one second organic luminous layer 110 and of electrode 60 comprise one for the first time electrode 120 and one the second time electrode 130 second electrode 140.The electrode 50 first time of first electrode 70 is not connected each other with electrode 60 for the second time.
In the said structure, the electrode 50 first time of first electrode 70 is electrically connected 160 with the source/drain electrode 150 of thin-film transistor 20.In first electrode 70, the electrode first time that is not insulated that layer 80 covers 50 is defined as one first luminous zone 170, and the electrode second time that is not insulated that layer 80 covers 60 is defined as one second luminous zone 180, and the common pixel cell of forming in two luminous zones.Column 90 surrounds first luminous zone 170.The electrode 120 first time of second electrode 140 60 is electrically connected with the electrode second time of first electrode 70, forms a series connection and touches district 190.Connect contact zone 190 between first luminous zone 170 and second luminous zone 180, and be positioned at the view field of column 90.
Thin-film transistor 20 for example is an amorphous silicon (amorphours silicone) or polysilicon (poly-crsystalline silicone) thin-film transistor.Protective layer 40 can be made of inorganic material or organic material.First electrode 70 can by indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zinc oxide, IZO) or the aluminium zinc oxide (aluminum zinc oxide AZO) constitutes.Insulating barrier 80 can be made of silica, silicon nitride, silicon oxynitride or photoresist.First luminous zone 170 equates that with the area approximation of second luminous zone 180 its gross area is approximately less than 1 square centimeter usually.It is one wide at the top and narrow at the bottom trapezoidal that column 90 for example can be, and the width of its view field is substantially between 3～10 microns.Second electrode 140 can be made of for example aluminum metal, its for the second time electrode 130 be electrically connected to each other and become community electrode (common electrode).The electrode first time of electrode 50 first time, first organic luminous layer 100 and second electrode 140 of above-mentioned first electrode 70 120 constitutes one first time luminous (bottom-emission) assembly.The electrode second time of electrode 60 second time, second organic luminous layer 110 and second electrode 140 of first electrode 70 130 constitutes one second time luminescence component.If the material of above-mentioned first electrode 70 and second electrode 140 is done suitable change, then can constitute and go up luminous (top-emission) assembly.
See also Fig. 2 A, Fig. 2 B, Fig. 2 A is in the dot structure shown in Figure 1, schematic plan before first organic luminous layer 100, second organic luminous layer 110 and second electrode 140 do not form as yet, Fig. 2 B then is the generalized section of Fig. 2 A along 2B-2B hatching gained.As mentioned above, a pixel cell 200 is formed jointly with second luminous zone 180 that the electrode 60 second time that is not insulated that layer 80 covers defines in first luminous zone 170 that is defined by the electrode 50 first time that is not insulated in first electrode 70 that layer 80 covers, and column 90 encirclements first luminous zone 170.Among Fig. 2 A, between first luminous zone 170 and second luminous zone 180, in abutting connection with column 90 the second time electrode zone 210 as follow-up second electrode the first time electrode with electrode 60 second time contact zone 190 of connecting between the two of first electrode 70.Thus, can be clear that more from Fig. 1 that the series connection contact zone 190 of follow-up formation is between first luminous zone 170 and second luminous zone 180 and in the view field of column 90.
Fig. 1 is the embodiment of following luminescence component, if first electrode is used lighttight material instead, as aluminum metal, second electrode is used the material of printing opacity instead, as materials such as indium tin oxide, indium-zinc oxide or aluminium zinc oxides, the organic light emission layer material then can produce luminescence component through suitable adjustment, and it has the advantage of big aperture opening ratio.
The present invention can do further extension, first dividing electrodes in the panel time dot structure is become N, and (N is an integer, and N 〉=2) equal portions, again insulating barrier is covered on first electrode or its edge of part, on insulating barrier, produces column again, so that second electrode of follow-up formation can be separated by it, and the first electrode mutual conduction with under the column forms a small series organic electric excited light emitting module, as (inferior) pixel of panel.
The objective of the invention is on the thin-film transistor backboard, to produce minute sized series type organic electro-luminescence diode, to be applied on the inferior pixel in the active formula organic electric exciting light-emitting diode panel.Because the organic electric exciting light-emitting diode in the panel time dot structure is that (N is an integer by two or more, and series connection organic electric exciting light-emitting diode N 〉=2) is formed, therefore, required drive current can be reduced to original N/one, so the present invention has and reduces the thin-film transistor power consumption, reduces dim spot, improves the production qualification rate and be more suitable for being applied on the amorphous silicon film transistor, help advantage such as large size panel manufacturing than prior art, simultaneously can be because of the panel less operation lifetime that prolongs organic electric exciting light-emitting diode that heats up.
See also Fig. 3 and Fig. 4 A, Fig. 4 B, another dot structure when it illustrates N=2 of the present invention with profile and schematic plan respectively.
See also Fig. 3, this is the generalized section of dot structure 10 '.Because dot structure 10 ' has similar structure to the dot structure 10 shown in Fig. 1,, be similar or identical content does not repeat them here so only describe the difference of itself and Fig. 1 below in detail.Dot structure 10 ' comprise a substrate 30, with metal wire (bus line) 220 comprise one for the first time electrode 50 with one the second time electrode 60 first electrode 70, an insulating barrier 80, a column 90, an organic luminous layer 100 ' and one second electrode 140 '.The electrode 50 first time of first electrode 70 is not connected each other with electrode 60 for the second time.
Insulating barrier 80 is covered in the subregion of first electrode 70, and column 90 is arranged on the insulating barrier 80, and organic luminous layer 100 ' is covered in the first time of first electrode 70 on the electrode 50, and second electrode 140 ' is formed on the organic luminous layer 100 '.
In the said structure, the electrode 60 second time of first electrode 70 is electrically connected with metal wire 220, to reduce its resistance.In first electrode 70, the electrode first time that is not insulated that layer 80 covers 50 is defined as a luminous zone (corresponding to first luminous zone in the previous embodiment) 170 '.Column 90 surrounds luminous zone 170 '.The electrode second time of second electrode 140 ' and first electrode 70 60 is electrically connected, and forms a series connection and touches district 190.Series connection contact zone 190 is positioned at 170 ' periphery, luminous zone, and is positioned at the view field of column 90.Metal wire 220 is positioned at the 170 ' outside, luminous zone.
See also Fig. 4 A, Fig. 4 B, Fig. 4 A is in the dot structure shown in Figure 3, the schematic plan before the organic luminous layer 100 ' and second electrode 140 ' form as yet, and Fig. 4 B then is the generalized section of Fig. 4 A along 4B-4B hatching gained.As mentioned above, column 90 surrounds luminous zone 170 '.Among Fig. 4 A, be positioned at luminous zone 170 ' peripheral, are electrode 60 second time contact zones of connecting between the two in abutting connection with the electrode zone 210 second time of column 90 as follow-up second electrode and first electrode 70.Thus, can be clear that more that the series connection of follow-up formation contact district is positioned at 170 ' periphery, luminous zone, and in the view field of column 90, and be electrically connected with metal wire 220.
Fig. 3 is the embodiment of following luminescence component, if first electrode is used lighttight material instead, as aluminum metal, second electrode is used the material of printing opacity instead, as materials such as indium tin oxide, indium-zinc oxide or aluminium zinc oxides, the organic light emission layer material then can produce luminescence component through suitable adjustment, and it has the advantage of big aperture opening ratio.
See also Fig. 5, it illustrates a kind of organic EL component of the present invention with a schematic plan.
Organic EL component comprises: a substrate 1; A plurality of first pixels 2, a plurality of second pixel 3 and a plurality of the 3rd pixels 4, it is arranged on the substrate 1, wherein each first pixel 2, second pixel 3 and the 3rd pixel 4 respectively by column 5 be divided into 6 of N pixel 6 and N time pixels each other electricity be connected in series and formation one space 7 between the column 5 of first pixel 2, second pixel 3 and 4 of the 3rd pixels; And an electrode 8, be formed on first pixel 2, second pixel 3 and the 3rd pixel 4, wherein be positioned at N the electrode 8 on time pixel 6 and be electrically connected to each other by space 7.
The above only is the preferred embodiments of the present invention, and so it is not in order to qualification protection scope of the present invention, and any those skilled in the art without departing from the spirit and scope of the present invention, can do to change and retouching.Therefore, the scope of the present invention should be as the criterion with the scope that accompanying claims were defined.
Claims (31)
1. dot structure comprises:
One substrate comprises a thin-film transistor;
One protective layer is covered on this substrate;
One first electrode is formed on this protective layer, this first electrode comprise one for the first time electrode with one the second time electrode, wherein the electrode first time of this first electrode is electrically connected with this thin-film transistor;
One insulating barrier is covered in the subregion of this first electrode, this first electrode expose the first time electrode and the electrode second time that exposes of this first electrode be defined as one first luminous zone and one second luminous zone respectively;
One column is arranged on this insulating barrier, surrounds this first luminous zone;
One first organic luminous layer, the first time that is covered in this first electrode is on the electrode;
One second organic luminous layer, the second time that is covered in this first electrode is on the electrode; And
One second electrode, comprise one for the first time electrode with one the second time electrode, the electrode first time of this second electrode is formed on this first organic luminous layer, and be electrically connected with the electrode second time of this first electrode, touch the district to form a series connection, the electrode second time of this second electrode is formed on this second organic luminous layer.
2. dot structure as claimed in claim 1, wherein this series connection contact district is positioned between this first and second luminous zone.
3. dot structure as claimed in claim 1, wherein this series connection contact district is positioned at the periphery of this first and second luminous zone.
4. dot structure as claimed in claim 3, wherein this dot structure also comprises a metal wire, this metal wire is between the second time of this substrate and this first electrode electrode; The electrode second time of this first electrode is electrically connected with this metal wire.
5. dot structure as claimed in claim 4, wherein this metal wire is positioned at the outside of this first and second luminous zone.
6. dot structure as claimed in claim 1, wherein this series connection contact district is positioned at the view field of this column.
7. dot structure as claimed in claim 6, wherein the width of this view field is between 3～10 microns.
8. dot structure as claimed in claim 1, wherein the electrode first time of the electrode first time of this first electrode, this first organic luminous layer and this second electrode constitutes one first luminescence component, the electrode second time of the electrode second time of this first electrode, this second organic luminous layer and this second electrode constitutes one second luminescence component, and described luminescence component is following luminescence component.
9. dot structure as claimed in claim 8, wherein this first electrode comprises indium tin oxide, indium-zinc oxide or aluminium zinc oxide.
10. dot structure as claimed in claim 8, wherein this second electrode package aluminiferous metals.
11. dot structure as claimed in claim 1, wherein the electrode first time of the electrode first time of this first electrode, this first organic luminous layer and this second electrode constitutes one first luminescence component, the electrode second time of the electrode second time of this first electrode, this second organic luminous layer and this second electrode constitutes one second luminescence component, and described luminescence component is last luminescence component.
12. dot structure as claimed in claim 11, wherein this first electrode package aluminiferous metals.
13. dot structure as claimed in claim 11, wherein this second electrode comprises indium tin oxide, indium-zinc oxide or aluminium zinc oxide.
14. dot structure as claimed in claim 1, wherein this insulating barrier is made of silica, silicon nitride, silicon oxynitride or photoresist.
15. dot structure as claimed in claim 1, wherein this column is wide at the top and narrow at the bottom trapezoidal.
16. dot structure as claimed in claim 1, wherein a pixel cell is formed in this first and second luminous zone.
17. dot structure as claimed in claim 1, wherein the area of this first and second luminous zone equates.
18. dot structure as claimed in claim 1, wherein the gross area of this first and second luminous zone is less than 1 square centimeter.
19. a dot structure comprises:
One substrate comprises a thin-film transistor;
One protective layer is covered on this substrate;
One first electrode is formed on this protective layer, comprises N sub-electrode, and N is the integer greater than 2; Wherein the electrode first time of this first electrode is electrically connected with this thin-film transistor;
One insulating barrier is covered in the subregion of this first electrode, and described N the sub-electrode that exposes of this first electrode is defined as N luminous zone, one first luminous zone to respectively;
At least one column is arranged on this insulating barrier, surrounds this first luminous zone respectively to this N-1 luminous zone;
One organic luminous layer is covered on the described luminous zone of this first electrode; And
One second electrode, comprise N sub-electrode, wherein N is the integer greater than 2, a described N sub-electrode is arranged on this organic luminous layer and corresponds respectively to described N sub-electrode of this first electrode, wherein the electrode first time of this second electrode is electrically connected and forms a series connection with this first electrode of second luminous zone and touches the district, the electrode second time of this second electrode is electrically connected and forms a series connection with first electrode of the 3rd luminous zone and touches the district, by that analogy, the N-1 sub-electrode of this second electrode is electrically connected and forms a series connection with first electrode of N luminous zone and touches the district.
20. dot structure as claimed in claim 19, wherein said series connection contact district is positioned between the described luminous zone.
21. dot structure as claimed in claim 19, wherein said series connection contact district is positioned at the periphery of described luminous zone.
22. dot structure as claimed in claim 21, wherein this dot structure also comprises at least one metal wire, and it is arranged at the outside of described luminous zone, and one of them is electrically connected the N of this first an electrode sub-electrode with described at least one metal wire.
23. dot structure as claimed in claim 19, wherein said series connection contact district is positioned at the view field of described at least one column.
24. dot structure as claimed in claim 23, wherein the width of this view field is between 3～10 microns.
25. it is wide at the top and narrow at the bottom trapezoidal that dot structure as claimed in claim 19, wherein said at least one column are.
26. the described dot structure of claim 19, wherein said N forms a pixel cell in a luminous zone.
27. dot structure as claimed in claim 19, the area of a wherein said N luminous zone equates.
28. an organic EL component comprises:
One substrate;
A plurality of first pixels, a plurality of second pixel and a plurality of the 3rd pixel, described pixel is arranged on this substrate, wherein each first pixel, second pixel and the 3rd pixel are divided into by column respectively that electricity is connected in series between N pixel and described N time pixel, and wherein N is the integer more than or equal to 2; And form a space between the column of described first pixel, second pixel and the 3rd pixel; And
One electrode is formed on described first pixel, second pixel and the 3rd pixel, wherein is positioned at described N the electrode on time pixel and is electrically connected to each other by this space.
29. organic EL component as claimed in claim 28, wherein said first pixel are red pixel, described second pixel is that green pixel and described the 3rd pixel are blue pixel.
30. organic EL component as claimed in claim 28, the space between the column between wherein said first pixel, second pixel and the 3rd pixel is between 1 micron to 50 microns.
31. organic EL component as claimed in claim 28, wherein being positioned at described N the electrode on time pixel is common electrode.
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| CN101872781B (en) * | 2009-04-27 | 2014-07-16 | 群创光电股份有限公司 | Image display system |
| CN101771070B (en) * | 2009-12-30 | 2012-01-04 | 友达光电股份有限公司 | Organic light-emitting device, pixel structure, contact structure and preparation method thereof |
| TWI448193B (en) * | 2011-02-17 | 2014-08-01 | Au Optronics Corp | Organic electroluminescent device and manufacturing method thereof |
| US10832616B2 (en) | 2012-03-06 | 2020-11-10 | Samsung Display Co., Ltd. | Pixel arrangement structure for organic light emitting diode display |
| KR101615332B1 (en) | 2012-03-06 | 2016-04-26 | 삼성디스플레이 주식회사 | Pixel arrangement structure for organic light emitting display device |
| CN103021334A (en) * | 2012-12-13 | 2013-04-03 | 京东方科技集团股份有限公司 | Pixel structure, pixel unit structure, display panel and display device |
| KR101427593B1 (en) * | 2013-04-26 | 2014-08-07 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
| CN104752612B (en) * | 2013-12-27 | 2017-02-08 | 昆山国显光电有限公司 | OLED (Organic Light Emitting Display) and manufacturing method thereof |
| US10361179B2 (en) | 2016-05-20 | 2019-07-23 | Innolux Corporation | Display device |
| CN107403817B (en) * | 2016-05-20 | 2020-06-23 | 群创光电股份有限公司 | display device |
| CN106128950B (en) | 2016-05-27 | 2019-01-22 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN108010943B (en) * | 2017-11-28 | 2019-04-02 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and its manufacturing method |
| CN109143681B (en) * | 2018-09-20 | 2021-09-14 | 厦门天马微电子有限公司 | Backlight module and display module |
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