CN100474574C - Chip package - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/30—Technical effects
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
技术领域 technical field
本发明涉及一种封装结构(chip package),且特别涉及一种使用可挠曲性基板(flexible substrate)的封装结构。The present invention relates to a package structure (chip package), and in particular to a package structure using a flexible substrate.
背景技术 Background technique
在目前的封装技术中,芯片主要是通过打线接合(wire bonding)技术、倒装芯片接合(flip chip)技术或是卷带自动接合(tape automated bonding,TAB)技术,来与芯片承载器电连接。在这些接合技术中,由于卷带自动接合技术具有:能在可挠曲性基材上直接进行电性的测试、能够利用可挠曲性基材来完成电子元件的立体组装以及能够制作出薄型且小型的芯片封装体等等优点,因此通过卷带自动接合技术所制作的芯片封装体已被广泛地应用于个人计算机、液晶电视、助听器以及存储卡等等电子产品中。In the current packaging technology, the chip is mainly connected to the chip carrier by wire bonding technology, flip chip bonding technology or tape automated bonding (TAB) technology. connect. Among these bonding technologies, the tape-and-roll automatic bonding technology has the following advantages: it can conduct electrical tests directly on flexible substrates, it can use flexible substrates to complete three-dimensional assembly of electronic components, and it can make thin And small chip package and other advantages, so the chip package made by automatic tape and roll bonding technology has been widely used in electronic products such as personal computers, LCD TVs, hearing aids and memory cards.
图1是公知的芯片封装体的剖面示意图。请参照图1,芯片封装体100包括可挠曲性基板110、线路层120、芯片130、多个凸块140以及封装胶体150。可挠曲性基板110的材质为聚乙酰胺(polyimide)。线路层120设置于可挠曲性基板110的表面112上。线路层120具有多个内引脚122、多条迹线124以及多个外引脚126,其中内引脚122分别通过这些迹线124来与对应的外引脚126电连接。FIG. 1 is a schematic cross-sectional view of a known chip package. Referring to FIG. 1 , the chip package 100 includes a
芯片130设置于线路层120上,并且通过这些凸块140来与这些内引脚122电连接。一般而言,公知技术是将热压机的压头(pressure head)160压合于可挠曲性基板110的相对于表面112的表面114上,并且通过压头160对可挠曲性基板110所施加的压力以及热量以使得芯片130通过这些凸块140电连接于内引脚122。封装胶体150设置于表面112上。封装胶体150设置于芯片130的外围并且将这些凸块140包覆于其内。此外,封装胶体150还充满于可挠曲性基板110与芯片130之间的间隙。The
值得注意的是,当压头160对可挠曲性基板110施加热量时,热量的传递路径主要是通过可挠曲性基板110以及线路层120而传递至这些凸块140上。然而,由于可挠曲性基板110的材质为聚乙酰胺,其具有相当高的热阻(thermal resistance),因此在不伤及可挠曲性基板110的条件之下,公知技术需要较长的时间才能将这些凸块140的温度提高至适合热压的温度。因此芯片封装体100的生产效率较低。It should be noted that when the
此外,具有较高热阻的可挠曲性基板110也容易造成压头160传递至这些凸块140的热量不均匀,以使得这些凸块140在同一时间内被加热至不同的温度。如此一来,部分的凸块140就容易在不适当的热压温度下与内引脚122接合,进而造成线路层120与芯片130之间电连接的质量的瑕疵。In addition, the
另外,芯片封装体100得位于表面112上的内引脚122与迹线124也可能会造成封装胶体150无法充分地充满可挠曲性基板110与芯片130之间的间隙。请参照图2,其为图1之封装胶体未充分地填充于可挠曲性基板与芯片之间的间隙的示意图,其中为了说明上的方便芯片130是被透明化并且以虚线表示芯片130的轮廓。在形成封装胶体150的过程中,当液态的胶体流入可挠曲性基板110与芯片130之间的间隙时,由于表面112上设置有多条内引脚122以及多条迹线124,因此液态的胶体会受到较大的流动阻力(flow resistance)。如此一来,液态的胶体就不容易将可挠曲性基板110与芯片130之间的间隙填满,因而容易使封装胶体150中产生孔洞(void)A。In addition, the internal leads 122 and traces 124 of the chip package 100 located on the surface 112 may also cause the
图3是另一种公知的芯片封装体的剖面示意图。芯片封装体200包括可挠曲性基板210、线路层220、线路层230、多个导电插塞240、芯片250、多个凸块260以及封装胶体270。可挠曲性基板210的材质为聚乙酰胺,其具有彼此相对的表面212与表面214。线路层220设置于表面212上,并且线路层220具有多个外引脚222与多条迹线224。线路层230设置于表面214上,并且线路层230具有多个内引脚232与多条迹线234。这些导电插塞240分别贯穿可挠曲性基板210,并且将线路层220电连接于线路层230。如此一来,这些内引脚232就可以通过这些迹线234、这些导电插塞240以及这些迹线224来电连接于外引脚222。芯片250通过这些凸块260电连接于内引脚232上。封装胶体270设置于表面214上,其中封装胶体270设置于芯片130的外围并且将这些凸块140包覆于其内。此外封装胶体270还填充于可挠曲性基板210与芯片250之间的间隙。FIG. 3 is a schematic cross-sectional view of another known chip package. The chip package 200 includes a
与前述的理由相同,由于可挠曲性基板210的材质为聚乙酰胺,因此在不伤及可挠曲性基板210的条件之下,公知技术需要较长的时间才能将这些凸块260的温度提高至适合热压的温度。是以芯片封装体200的生产效率偏低。并且具有较高热阻的可挠曲性基板210也容易造成压头160传递至这些凸块260的热量不均匀,内引脚232与芯片250之间电连接的质量也容易产生瑕疵。For the same reason as above, since the material of the
另外,由于表面214上设置有多条内引脚232以及多条迹线234,因此在形成封装胶体270时,容易使得液态的封装胶体270无法充分地充满可挠曲性基板210与芯片250之间的间隙,而在液态的封装胶体270固化后在可挠曲性基板210与芯片250之间产生类似于图2的孔洞A的问题。In addition, since the
发明内容 Contents of the invention
本发明的目的就是在提供一种芯片封装体,其中芯片与内引脚之间的具有较可靠的电连接。The purpose of the present invention is to provide a chip package, wherein there is a more reliable electrical connection between the chip and the inner pins.
本发明的再一目的是提供一种芯片封装体,其中封装胶体能够充分的填充于可挠曲性基板与芯片之间的间隙。Another object of the present invention is to provide a chip package, wherein the encapsulant can fully fill the gap between the flexible substrate and the chip.
本发明提出一种芯片封装体,其包括可挠曲性基板、多个导电插塞、线路层以及芯片。可挠曲性基板具有彼此相对的第一表面以及第二表面。这些导电插塞贯穿可挠曲性基板。线路层位于第一表面上。线路层具有多个内引脚,且这些内引脚分别与这些导电插塞电连接。芯片具有主动表面以及位于主动表面上的多个凸块,其中芯片设置于可挠曲性基板的第二表面上,并通过这些凸块与这些导电插塞接合,每一凸块与其所对应的导电插塞完全或部分重叠,且上述每一凸块与所述芯片的接合面会与其所对应的导电插塞完全或部分重叠。The invention provides a chip package, which includes a flexible substrate, a plurality of conductive plugs, a circuit layer and a chip. The flexible substrate has a first surface and a second surface opposite to each other. These conductive plugs run through the flexible substrate. The circuit layer is located on the first surface. The circuit layer has a plurality of internal pins, and these internal pins are respectively electrically connected to the conductive plugs. The chip has an active surface and a plurality of bumps on the active surface, wherein the chip is arranged on the second surface of the flexible substrate, and is bonded to the conductive plugs through the bumps, and each bump is connected to its corresponding The conductive plugs are completely or partially overlapped, and the bonding surface of each bump and the chip is completely or partially overlapped with the corresponding conductive plugs.
依照本发明的较佳实施例所述之芯片封装体,上述线路层还包括多条迹线以及多个外引脚,并且这些迹线是连接于这些内引脚以及这些外引脚之间。According to the chip package described in a preferred embodiment of the present invention, the circuit layer further includes a plurality of traces and a plurality of external leads, and the traces are connected between the internal leads and the external leads.
依照本发明的较佳实施例所述之芯片封装体,还包括各向异性导电胶(ACP)或各向异性导电膜(ACF)。各向异性导电胶设置于可挠曲性基板与芯片之间,以使这些凸块与这些导电插塞电连接。The chip package according to a preferred embodiment of the present invention further includes anisotropic conductive paste (ACP) or anisotropic conductive film (ACF). The anisotropic conductive adhesive is disposed between the flexible substrate and the chip to electrically connect the bumps and the conductive plugs.
依照本发明的较佳实施例所述之芯片封装体,更包括一两阶段特性(Bstage)胶材,设置于可挠曲性基板与芯片之间,以使这些凸块与这些导电插塞电连接。The chip package according to the preferred embodiment of the present invention further includes a two-stage characteristic (Bstage) adhesive material disposed between the flexible substrate and the chip, so that the bumps and the conductive plugs are electrically connected to each other. connect.
依照本发明的较佳实施例所述之芯片封装体,其中这些凸块是两阶段(B stage)导电凸块。In the chip package according to a preferred embodiment of the present invention, the bumps are two-stage (B stage) conductive bumps.
依照本发明的较佳实施例所述之芯片封装体,还可包含导电胶或金属,设置于凸块与导电插塞之间,通过导电胶或金属以使这些凸块与这些导电插塞电连接。The chip package according to the preferred embodiment of the present invention may further include conductive glue or metal disposed between the bumps and the conductive plugs, through which the bumps and the conductive plugs are electrically connected. connect.
依照本发明的较佳实施例所述之芯片封装体,还包括非导电聚合材质。非导电聚合材质设置于可挠曲性基板与芯片之间,以通过非导电聚合材质的固化,使得这些凸块电连接于这些导电插塞。The chip package according to a preferred embodiment of the present invention further includes a non-conductive polymer material. The non-conductive polymer material is disposed between the flexible substrate and the chip, so that the bumps are electrically connected to the conductive plugs through the solidification of the non-conductive polymer material.
依照本发明的较佳实施例所述之芯片封装体,还包括底胶。底胶设置于可挠曲性基板与芯片之间,以包覆住这些凸块。The chip package according to a preferred embodiment of the present invention further includes a primer. The primer is disposed between the flexible substrate and the chip to cover the bumps.
依照本发明的较佳实施例所述之芯片封装体,上述这些导电插塞更突出于第二表面外。According to the chip package described in the preferred embodiment of the present invention, the above-mentioned conductive plugs are more protruded from the second surface.
依照本发明的较佳实施例所述之芯片封装体,还包括封装胶体设置于第二表面上,以包覆住芯片。另外,封装胶体还可以具有开口,而且此开口暴露出芯片的与主动表面相对的背面。The chip package according to a preferred embodiment of the present invention further includes an encapsulant disposed on the second surface to cover the chip. In addition, the encapsulant may also have an opening, and the opening exposes the backside of the chip opposite to the active surface.
依照本发明的较佳实施例所述之芯片封装体,上述可挠曲性基板的材质是高分子材料,其中此高分子材料例如是聚乙酰胺。According to the chip package described in a preferred embodiment of the present invention, the material of the flexible substrate is a polymer material, wherein the polymer material is, for example, polyacetamide.
由于本发明之芯片和内引脚分别位于可挠曲性基板的相对两侧,并且由于导电插塞是直接与凸块电接触,因此当本发明通过热压工艺而使芯片通过凸块而电连接于导电插塞时,凸块的温度可以更快速地升高到适合热压的温度。是以在不伤害可挠曲性基板的条件下,本发明可以快速地并且确实地将芯片电连接于内引脚。另外,由于本发明之芯片与可挠曲性基板之间仅具有多个凸块,因此形成封装胶体的时候,液态的封装胶体可以充分地充满芯片与可挠曲性基板之间的间隙。Since the chip and the inner pins of the present invention are respectively located on opposite sides of the flexible substrate, and since the conductive plugs are in direct electrical contact with the bumps, when the chip passes through the bumps and electrically When connected to the conductive plug, the temperature of the bump can be raised to a temperature suitable for hot pressing more quickly. Therefore, under the condition of not damaging the flexible substrate, the present invention can quickly and surely electrically connect the chip to the inner pin. In addition, since there are only a plurality of bumps between the chip and the flexible substrate of the present invention, when forming the encapsulant, the liquid encapsulant can fully fill the gap between the chip and the flexible substrate.
为让本发明之上述和其它目的、特征和优点能更明显易懂,下文特举较佳实施例,并配合附图,作详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are specifically cited below and described in detail with accompanying drawings.
附图说明 Description of drawings
图1是公知的芯片封装体的剖面示意图。FIG. 1 is a schematic cross-sectional view of a known chip package.
图2是图1之封装胶体未充分地填充于可挠曲性基板与芯片之间的间隙的示意图。FIG. 2 is a schematic diagram showing that the encapsulant in FIG. 1 is not fully filled in the gap between the flexible substrate and the chip.
图3是另一种公知之芯片封装体的剖面示意图。FIG. 3 is a schematic cross-sectional view of another known chip package.
图4是本发明一实施例之芯片封装体的剖面示意图。FIG. 4 is a schematic cross-sectional view of a chip package according to an embodiment of the present invention.
图5是本发明另一实施例之芯片封装体的剖面示意图。FIG. 5 is a schematic cross-sectional view of a chip package according to another embodiment of the present invention.
图6是本发明又一实施例之芯片封装体的剖面示意图。FIG. 6 is a schematic cross-sectional view of a chip package according to another embodiment of the present invention.
图7是本发明再一实施例之芯片封装体的剖面示意图。FIG. 7 is a schematic cross-sectional view of a chip package according to yet another embodiment of the present invention.
主要元件标记说明Description of main component marking
100:芯片封装体100: chip package
110:可挠曲性基板110: Flexible substrate
112:表面112: surface
114:表面114: surface
120:线路层120: line layer
122:内引脚122: inner pin
124:迹线124: trace
126:外引脚126: External pin
130:芯片130: chip
140:凸块140: Bump
150:封装胶体150: encapsulation colloid
160:压头160: pressure head
200:芯片封装体200: chip package
210:可挠曲性基板210: Flexible substrate
212:表面212: surface
214:表面214: surface
220:线路层220: Line layer
222:外引脚222: External pin
224:迹线224: trace
230:线路层230: Line layer
232:内引脚232: inner pin
234:迹线234: trace
240:导电插塞240: Conductive plug
250:芯片250: chips
260:凸块260: Bump
270:封装胶体270: encapsulation colloid
300:芯片封装体300: chip package
301:芯片封装体301: chip package
302:芯片封装体302: chip package
303:芯片封装体303: chip package
310:可挠曲性基板310: Flexible substrate
320:导电插塞320: Conductive plug
322:半圆形突出部322: semi-circular protrusion
324:焊垫324: welding pad
330:线路层330: line layer
332:内引脚332: inner pin
334:迹线334: trace
336:外引脚336: external pin
340:芯片340: chip
342:主动表面342: Active Surface
344:凸块344: bump
346:背面346: back
312:第一表面312: First Surface
314:第二表面314: second surface
350:封装胶体350: encapsulation colloid
352:开口352: opening
360:各向异性导电胶360: Anisotropic conductive adhesive
362:导电粒子362: Conductive particles
370:非导电聚合材质370: Non-conductive polymer material
380:底胶380: primer
390:导电胶390: Conductive adhesive
A:孔洞A: hole
具体实施方式 Detailed ways
图4是本发明一实施例之芯片封装体的剖面示意图。请参照图4,芯片封装体300主要包括可挠曲性基板310、多个导电插塞320、线路层330以及芯片340。可挠曲性基板310具有彼此相对的第一表面312以及第二表面314。可挠曲性基板310的材质例如是聚乙酰胺或是其它种类的具可挠曲性的高分子材质。这些导电插塞320贯穿可挠曲性基板310并且导电插塞320的材质例如是金属材质。在本实施例中导电插塞320具有突出于第二表面314的半圆形突出部322。FIG. 4 is a schematic cross-sectional view of a chip package according to an embodiment of the present invention. Referring to FIG. 4 , the
线路层330是由金属材质所形成,其设置于第一表面312上,并且线路层330包括多个内引脚332、多条迹线334以及多个外引脚336。导电插塞320与分别与这些内引脚332电连接,而这些外引脚336适于通过适当的外部连接端子来与其它的电路元件电连接。The
芯片340具有主动表面342,并且芯片340还具有位于主动表面342上的多个凸块344,其中这些凸块344例如是金凸块、两阶段(B stage)导电凸块或是其它的导电凸块。这些凸块344分别与这些导电插塞320电连接,以使得芯片340可以通过凸块344、导电插塞320、内引脚332、迹线334以及外引脚336来与芯片封装体300以外的电路元件电连接。The
承上述,本实施例将芯片340电连接于导电插塞320的方法是先将热压机的压头160压合于内引脚332上。通过压头160施加于内引脚332的压力以及热量,使得芯片340电连接于导电插塞320。更详细地说,由于内引脚332以及导电插塞320均由金属材质所形成,且凸块与导电插塞是直接完全重叠,或者是部分重叠,因此自压头160所输出的热量可通过内引脚332以及导电插塞320而更快速、直接地传导至凸块344。如此一来,导电插塞320以及凸块344的温度便能够被快速地提高至热压所需的温度,并且完成导电插塞320以及凸块344之间的连结。Based on the above, the method for electrically connecting the
此外,芯片封装体300还可以包括封装胶体350,其中封装胶体350的材质为树脂(resin)或是其它种类的保护树脂。封装胶体350设置于第二表面314上,并且围绕于芯片340的周围。此外,封装胶体350还填充于芯片340与可挠曲性基板310之间的间隙。封装胶体350具有开口352,其中开口352暴露出芯片340之相对于主动表面342的背面346。如此一来,芯片340所发出的热量的部分便可以通过开口352而与外界环境进行热交换。本实施例形成封装胶体350的方法是通过点胶机(dispensingtool)将液态的封装胶体350设置于芯片340的周围,以使封装胶体350填充于芯片340与可挠曲性基板310之间的间隙。之后,将液态的封装胶体350固化,而得到固态的封装胶体350。值得注意的是,由于本实施例的线路层330是位于第一表面312上,并且在第二表面314上不具有迹线或是引脚,因此与公知技术相比而言,本实施例的封装胶体350在芯片340与可挠曲性基板310之间的间隙流动时不会受到迹线或是引脚的阻碍。是以封装胶体350会受到较小的流动阻力。In addition, the
图5是本发明另一实施例之芯片封装体的剖面示意图。请共同参照图4与图5,芯片封装体301与芯片封装体300之间主要的差异在于,芯片封装体301的导电插塞320突出于第二表面314的突出部是焊垫324。详细地说,本发明主要的精神是在于导电插塞与凸块之间的完全重叠或是部分重叠,是以在上述的实施例中导电插塞320突出于第二表面314的突出部可以是半圆形突出部322、焊垫324或是其它种外型的突出结构。在导电插塞320与凸块344之间完全重叠或部分重叠,并且彼此电连接的情况下,导电插塞320也可以不突出于第二表面314外。FIG. 5 is a schematic cross-sectional view of a chip package according to another embodiment of the present invention. Please refer to FIG. 4 and FIG. 5 together. The main difference between the
另外,芯片封装体301还可以包括一层各向异性导电胶(ACP)或者是各向异性导电膜(ACF)360,以使得凸块344可以通过各向异性导电胶360内的导电粒子362而与焊垫324电连接。In addition, the
当然,本发明所提出的芯片封装体除了可以在芯片与可挠曲性基板之间设置一层各向异性导电胶外,还可以设置一层非导电聚合材质或是一层底胶于两者之间,其示意图分别如图6与图7所示。首先请参照图6,芯片封装体302与芯片封装体301之间主要的差异在于,芯片封装体302之芯片340与可挠曲性基板310之间是设置一层非导电聚合材质370。如此一来,本实施例便可以通过非导电聚合材质370受热固化后的体积会产生收缩的特性,使得焊垫324与凸块344之间的接合更为紧密。Of course, the chip package proposed by the present invention can not only have a layer of anisotropic conductive adhesive between the chip and the flexible substrate, but also a layer of non-conductive polymeric material or a layer of primer between the two. The schematic diagrams are shown in Figure 6 and Figure 7 respectively. First please refer to FIG. 6 , the main difference between the
请参照图7,芯片封装体303与芯片封装体301之间主要的差异在于芯片封装体303之芯片340与可挠曲性基板310之间是设置一层底胶380,其中底胶380将这些凸块包覆于其内。如此一来,底胶380便可以作为芯片340与可挠曲性基板310之间的缓冲,以避免芯片340与可挠曲性基板310之间的电连接关系受到热应力的作用而遭到破坏。此外,在本实施例中焊垫324与凸块344之间还可以设置一层导电胶或金属390,以使得焊垫324通过导电胶390来与凸块344电连接。当然,上述实施例并非用以限定本发明,在本发明之其它实施例中还可以在芯片340与可挠曲性基板310之间设置一层两阶段性胶或是其它种类的间隙物(interposer)。Please refer to FIG. 7 , the main difference between the
由于本发明之芯片和内引脚分别位于可挠曲性基板的相对两侧,并且由于导电插塞是直接与凸块电接触,因此当本发明通过热压工艺而使芯片通过凸块而电连接于导电插塞时,凸块的温度可以快速地升高到热压所需的温度。是以在不伤害可挠曲性基板的条件下,本发明可以快速地并且确实地将芯片电连接于内引脚。Since the chip and the inner pins of the present invention are respectively located on opposite sides of the flexible substrate, and since the conductive plugs are in direct electrical contact with the bumps, when the chip passes through the bumps and electrically When connected to the conductive plug, the temperature of the bump can be quickly raised to the temperature required for thermal pressing. Therefore, under the condition of not damaging the flexible substrate, the present invention can quickly and surely electrically connect the chip to the inner pin.
另外,由于本发明之芯片与可挠曲性基板之间仅具有多个凸块,因此形成封装胶体的时候,液态的封装胶体可以充分地充满芯片与可挠曲性基板之间的间隙。In addition, since there are only a plurality of bumps between the chip and the flexible substrate of the present invention, when forming the encapsulant, the liquid encapsulant can fully fill the gap between the chip and the flexible substrate.
虽然本发明已以较佳实施例披露如上,然其并非用以限定本发明,任何所属技术领域的技术人员,在不脱离本发明之精神和范围内,当可作些许之更动与改进,因此本发明之保护范围当视权利要求所界定者为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the claims.
Claims (14)
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US20020185749A1 (en) * | 1996-03-07 | 2002-12-12 | Farnworth Warren M. | Mask repattern process |
US6784554B2 (en) * | 2001-12-26 | 2004-08-31 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
CN2672857Y (en) * | 2003-06-13 | 2005-01-19 | 威盛电子股份有限公司 | Flip-chip package base plate |
US20050040525A1 (en) * | 2002-03-06 | 2005-02-24 | Via Technologies, Inc. | Package module for an IC device and method of forming the same |
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US5703405A (en) * | 1993-03-15 | 1997-12-30 | Motorola, Inc. | Integrated circuit chip formed from processing two opposing surfaces of a wafer |
US20020185749A1 (en) * | 1996-03-07 | 2002-12-12 | Farnworth Warren M. | Mask repattern process |
US6784554B2 (en) * | 2001-12-26 | 2004-08-31 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
US20050040525A1 (en) * | 2002-03-06 | 2005-02-24 | Via Technologies, Inc. | Package module for an IC device and method of forming the same |
CN2672857Y (en) * | 2003-06-13 | 2005-01-19 | 威盛电子股份有限公司 | Flip-chip package base plate |
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