CN100459177C - Nano silicon/monocrystalline silicon heterojunction solar cell and preparation method thereof - Google Patents
Nano silicon/monocrystalline silicon heterojunction solar cell and preparation method thereof Download PDFInfo
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- CN100459177C CN100459177C CNB2005100985269A CN200510098526A CN100459177C CN 100459177 C CN100459177 C CN 100459177C CN B2005100985269 A CNB2005100985269 A CN B2005100985269A CN 200510098526 A CN200510098526 A CN 200510098526A CN 100459177 C CN100459177 C CN 100459177C
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title abstract description 20
- 239000005543 nano-size silicon particle Substances 0.000 title description 10
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 11
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 7
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000002159 nanocrystal Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000002834 transmittance Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 26
- 239000010408 film Substances 0.000 abstract description 23
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000002207 thermal evaporation Methods 0.000 abstract description 6
- 238000007738 vacuum evaporation Methods 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 238000000151 deposition Methods 0.000 description 13
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- 238000001259 photo etching Methods 0.000 description 4
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- 238000005498 polishing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
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- 238000000407 epitaxy Methods 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本发明涉及一种纳米晶硅/单晶硅异质结太阳能电池及其制备方法，属于太阳能电池器件制备技术领域。该太阳能电池依次由Al背电极、p型单晶硅、本征纳米晶硅、n型纳米晶硅、透明导电膜和金属栅极构成。本发明的太阳能电池，采用真空热蒸发法制备铝背电极；采用化学气相沉积方法依次生长本征和n掺杂纳米晶硅薄膜形成异质结结构；在异质结结构上采用真空蒸发或溅射法沉积透明导电膜作为前电极；在透明导电膜上采用蒸发技术形成Ag栅极，形成n-nc-Si:H/i-nc-Si:H/c-Si结构的薄膜太阳能电池。采用无织构的CZ单晶硅，在0.92cm2面积上，电池转化效率17.18%。本发明所采用的工艺路线简单，易于实现。
The invention relates to a nanocrystalline silicon/single crystal silicon heterojunction solar cell and a preparation method thereof, belonging to the technical field of solar cell device preparation. The solar cell is sequentially composed of an Al back electrode, p-type single crystal silicon, intrinsic nanocrystalline silicon, n-type nanocrystalline silicon, a transparent conductive film and a metal gate. In the solar cell of the present invention, the aluminum back electrode is prepared by vacuum thermal evaporation; the intrinsic and n-doped nanocrystalline silicon films are sequentially grown by chemical vapor deposition to form a heterojunction structure; vacuum evaporation or sputtering is used on the heterojunction structure The transparent conductive film is deposited by irradiation method as the front electrode; the Ag grid is formed on the transparent conductive film by evaporation technology to form a thin film solar cell with n-nc-Si:H/i-nc-Si:H/c-Si structure. Using non-textured CZ monocrystalline silicon, the cell conversion efficiency is 17.18% on an area of 0.92cm 2 . The technological route adopted in the present invention is simple and easy to realize.
Description
Technical field
The present invention relates to a kind of nano silicon/monocrystalline silicon heterojunction solar cell and preparation method thereof, belong to the solar cell device preparing technical field.
Background technology
The research of silicon solar cell and utilization are to realize one of main path of regenerative resource, and in the process of industrialization, cheap, efficient, stable is three key issues.Have with thin film silicon and [comprising: noncrystal membrane silicon (a-Si:H), nano-crystal film silicon (nc-Si:H), low-temperature epitaxy thin film silicon (epi-Si)] be emitter, monocrystalline silicon is the silicon solar cell of absorbent layer structure, have the stable and thin-film silicon cell advantages of being cheap of monocrystalline silicon battery concurrently: adopt the low temperature preparation process (temperature is lower than 450 ℃) of no High temperature diffusion, energy consumption is little; Thin monocrystalline silicon piece (silicon wafer thickness less than 300 μ m, the thickness～350 μ m of body silion cell) usually and silicon membrane layer (tens nanometers), the cost of material is low; Preparation technology is simple relatively, and particularly such battery has and the analogous high efficiency of monocrystalline silicon battery, therefore, can satisfy cheap, efficient, stable requirement simultaneously.
Present international heterojunction solar battery has two types:
(I) p type a-Si:H/ intrinsic a-Si:H/n type c-Si structure, Japan Sanyo company is that the highest laboratory efficient of this class battery (claiming the HIT battery) of representative is 21.5%, the efficient of commercially available 200W assembly is 17%, be higher than monocrystalline silicon battery, this battery has two-sided symmetrical structure, n type monocrystalline silicon both sides 2 layers of intrinsic a-Si:H film, front one deck p type a-Si:H, the back side adopts one deck n+ type amorphous silicon as back of the body electric field, 2 layers of transparent electrode layer and double layer of metal grid afterwards, structure and technology slightly complicated, as shown in Figure 1.
(II) heterojunction solar battery of n type a-Si:H/ intrinsic a-Si:H/p type c-Si structure.II type structure is simpler relatively than I type, p type monocrystalline silicon deposition one deck intrinsic amorphous silicon, one deck n type amorphous silicon, plated metal aluminium and high temperature sintering (～650 ℃) form back of the body field overleaf, afterwards deposition layer of transparent electrode layer and layer of metal grid on n type amorphous silicon.This structure battery has related to the pyroprocess greater than 600 degree.Present laboratory peak efficiency 17.2%.
The common ground of this two classes battery structure is: all adopt amorphous silicon as emitter and buried regions, the preparation of using plasma chemical vapour deposition technique.The key that obtains high efficiency heterojunction solar battery is high-quality interface, and monocrystalline silicon surface processing and thin film preparation process are had higher requirement.How avoiding high energy ion in plasma chemical vapor deposition technique also is one of key issue to the bombardment damage at interface.
Summary of the invention
The objective of the invention is to propose a kind of nano silicon/monocrystalline silicon heterojunction solar cell and preparation method thereof, prepare emitter and buried regions with the Nano silicon-crystal thin film depositing operation of optimizing, optimization is simplified battery preparation technique simultaneously to the processing at interface, improves carrier collection efficient.
The nano silicon/monocrystalline silicon heterojunction solar cell that the present invention proposes is followed successively by metal A l back electrode, p type monocrystalline silicon, intrinsic Nano silicon-crystal thin film, n type Nano silicon-crystal thin film, nesa coating and Ag grid; The thickness of described metal A l back electrode is 250～300 microns; The thickness of described intrinsic Nano silicon-crystal thin film is 5～10nm; The thickness of described n type Nano silicon-crystal thin film is 10～15nm; The thickness of described nesa coating is 80～120nm; The thickness of described Ag grid is 5～10 microns, and the grid line width is 30～150 microns, and spacing is 2～3mm; Described p type monocrystalline silicon thickness is 250～300 microns.
The preparation method of above-mentioned nano silicon/monocrystalline silicon heterojunction solar cell may further comprise the steps:
(1) clean single-sided polishing p type monocrystalline silicon piece, the thickness of monocrystalline silicon piece is 250～300 microns, and resistivity is 0.5～1.5 Ω cm;
(2) with rafifinal as evaporation source, be 10～15 microns metal A l at the backside deposition thickness of above-mentioned monocrystalline silicon piece, then under protective atmosphere, 350～450 degree annealing 20～40 minutes form the metal A l back electrode of ohmic contact;
(3) clean the p type monocrystalline silicon piece burnishing surface of existing aluminum back electrode with 1% HF solution, and the vacuum chamber of rapidly slice, thin piece being packed into, the vacuum chamber background vacuum pressure is 3-6 * 10
-4Pa is with the burnishing surface of atomic hydrogen processing monocrystalline silicon;
(4) under silicon temperature 150～250 degree conditions, be reacting gas with hydrogen, silane, on the p type monocrystalline silicon piece burnishing surface that atomic hydrogen is handled, deposit thickness is the intrinsic Nano silicon-crystal thin film of 5～10nm above-mentioned;
(5) be reacting gas with hydrogen, silane and phosphine, deposit thickness is the n type dopen Nano polycrystal silicon film of 10～15nm on above-mentioned intrinsic Nano silicon-crystal thin film/p type monocrystalline silicon;
(6) deposit thickness is 80～120nm on established n type dopen Nano polycrystal silicon film/intrinsic Nano silicon-crystal thin film/p type monocrystalline silicon, and transmitance 〉=90%, square resistance are the transparent conductive film of 50-100 Ω;
(7) preparation Ag grid on established transparent conductive film, the thickness of grid is 5～10 microns, and the grid line width is 30～150 microns, and spacing is 2～3mm.
Nano silicon/monocrystalline silicon heterojunction solar cell that the present invention proposes and preparation method thereof has following characteristics and advantage:
1, the battery structure of the present invention's employing is simple, and emitter and buried regions adopt Nano silicon-crystal thin film, have replaced the amorphous silicon membrane in common I type and the II type structure, can effectively improve collection efficiency of current, makes battery have the characteristics of big electric current output.
2, utilize an amount of atomic hydrogen to handle monocrystalline silicon surface, reduce interface state density, can effectively improve interface quality.
3, battery structure of the present invention is compared with common I type a-Si:H film/c-Si battery, adopt thermal evaporation Al back electrode, replaced depositing overleaf highly doped thin layer, avoided different doping types may bring in the double-sided deposition process cross pollution and to the destruction at interface, technological process is simple relatively, easy operating and realization.
4, back electrode preparation technology of the present invention compares with II type a-Si:H film/c-Si battery, adopt the annealing of 350-450 degree to substitute the high-temperature sintering process of 650 degree, can avoid the damage of stress that pyroprocess induces, help reducing monocrystalline silicon piece thickness monocrystalline silicon piece.
5, adopt CZ monocrystalline silicon at present, do not having under the texture situation, at 0.92cm
2On the area, obtain peak efficiency 17.18%, see Fig. 3.
6, implementation method of the present invention simple unique, be easy to grasp, have easy to operate, repeat reliable characteristics, have clear and definite industrialization prospect.
Description of drawings
Fig. 1 is the I type battery structure schematic diagram of existing industrialization technology.
Fig. 2 is the nano silicon/monocrystalline silicon heterojunction battery structure schematic diagram that the present invention designs.
Fig. 3 adopts the battery structure of the present invention's design and the I-V curve and the battery parameter of the battery that method obtains to give an example.
Fig. 4 and Fig. 5 are respectively the embodiment schematic diagrames that the inventive method is made the Ag grid.
Among Fig. 1 and Fig. 2, the 1st, nesa coating, the 2nd, n+ type amorphous silicon membrane, the 3rd, intrinsic amorphous silicon film, the 4th, n type monocrystalline silicon, the 5th, p type amorphous silicon membrane, the 6th, metal gates, the 7th, metal A l back electrode, the 8th, p type monocrystalline silicon, the 9th, intrinsic Nano silicon-crystal thin film, the 10th, n type Nano silicon-crystal thin film.
Embodiment
The nano silicon/monocrystalline silicon heterojunction solar cell that the present invention proposes, its structure is followed successively by metal A l back electrode 7, p type monocrystalline silicon 8, intrinsic Nano silicon-crystal thin film 9, n type Nano silicon-crystal thin film 10, nesa coating 1 and Ag grid 6 as shown in Figure 2.The thickness of metal A l back electrode is 250～300 microns; The thickness of described intrinsic Nano silicon-crystal thin film is 5～10nm; The thickness of described n type dopen Nano polycrystal silicon film is 10～15nm; The thickness of described transparent conductive film is 80～120nm; The thickness of described Ag grid is 5～10 microns, and the grid line width is 30～150 microns, and spacing is 2～3mm; Described p type monocrystalline silicon thickness is 250～300 microns.
The preparation method of nano silicon/monocrystalline silicon heterojunction solar cell of the present invention may further comprise the steps:
(1) before the cell preparation, adopt the electron level cleaning step of standard to clean single-sided polishing p type monocrystalline silicon piece, the thickness of monocrystalline silicon piece is the 250-300 micron, and resistivity is 0.5～1.5 Ω cm;
(2) with rafifinal as evaporation source, adopt thermal evaporation techniques, be 10～15 microns metal A l at the backside deposition thickness of above-mentioned monocrystalline silicon piece, under protective atmosphere, 350～450 degree annealing formed the back electrode of ohmic contact in 20～40 minutes then;
(3) clean the p type monocrystalline silicon piece burnishing surface of existing aluminum back electrode with 1% HF solution, and the vacuum chamber of rapidly slice, thin piece being packed into;
(4) the vacuum chamber background vacuum pressure is 3～6 * 10
-4Pa is with the burnishing surface of atomic hydrogen processing monocrystalline silicon;
(5) under silicon temperature 150～250 degree conditions, with hydrogen, silane is reacting gas, on the p type monocrystalline silicon piece burnishing surface that atomic hydrogen is handled, with the intrinsic Nano silicon-crystal thin film of chemical vapour deposition technique deposit thickness 5～10nm, the conductivity of Nano silicon-crystal thin film is 1～3 * 10 above-mentioned
-5Ω
-1Cm
-1
(6) being reacting gas with hydrogen, silane and phosphine, is the n type dopen Nano polycrystal silicon film of 10～15nm with the chemical vapour deposition technique deposit thickness on above-mentioned intrinsic Nano silicon-crystal thin film/p type monocrystalline silicon, conductivity 5～10 * 10
-3Ω
-1Cm
-1
(7) deposit thickness is 80～120nm on said n type dopen Nano polycrystal silicon film/intrinsic Nano silicon-crystal thin film/p type monocrystalline silicon, and transmitance 〉=90%, square resistance are the transparent conductive film of 50～100 Ω;
(8) employing prepares the Ag grid in conjunction with the thermal evaporation techniques or the photoetching technique of mask plate, 5～10 microns of the thickness of grid, and 30～150 microns of grid line width, spacing is 2-3mm.
Below introduce one embodiment of the present of invention:
1, before the cell preparation, adopt standard electric sub level cleaning step to clean single-sided polishing p type CZ monocrystalline silicon piece, 300 microns of monocrystalline silicon piece thickness, resistivity 1 Ω cm;
2, with rafifinal as evaporation source, adopt thermal evaporation techniques, at the metal A l of 10 microns of the backside deposition thickness of above-mentioned monocrystalline silicon piece, then under blanket of nitrogen, monocrystalline silicon temperature 450 degree annealing down formed the back electrode of ohmic contact in 30 minutes;
3, clean the p type monocrystalline silicon piece burnishing surface of existing aluminum back electrode with 1% HF solution, the vacuum chamber of rapidly slice, thin piece being packed in 2 minutes;
4, vacuum chamber background vacuum reaches 4 * 10
-4Pa is with the burnishing surface of atomic hydrogen processing monocrystalline silicon;
5, under silicon temperature 250 degree conditions, with hydrogen, silane is reacting gas, on the p type monocrystalline silicon piece burnishing surface that atomic hydrogen is handled, adopt the intrinsic Nano silicon-crystal thin film of hot-wire chemical gas-phase deposition deposition techniques thickness 6nm above-mentioned, the conductivity of Nano silicon-crystal thin film is 2.5 * 10
-5Ω
-1Cm
-1
6, being reacting gas with hydrogen, silane and phosphine, is the n type dopen Nano polycrystal silicon film of 11nm with hot-wire chemical gas-phase deposition deposition techniques thickness on above-mentioned depositing nano polycrystal silicon film/p type monocrystalline silicon, conductivity 8.5 * 10
-3Ω
-1Cm
-1
7, on said n type dopen Nano polycrystal silicon film/intrinsic Nano silicon-crystal thin film/p type monocrystalline silicon, adopt vacuum evaporation technique deposit thickness 100nm, transmitance～90%, the transparent conductive film of square resistance＜100 Ω;
8, employing is in conjunction with the thermal evaporation techniques of mask plate, and preparation thickness is 10 microns Ag grid, and grating spacing is 2mm.
According to above battery structure and technology path, adopt the CZ crystalline silicon substrate, there be not under the situation of texture 0.92cm
2On the area, obtained short circuit current J
Sc=35.9mA/cm
2, open circuit voltage V
Oc=577mV, fill factor, curve factor FF=83.02%, the battery of conversion efficiency=17.18% is seen Fig. 3.
Nesa coating preparation process in the inventive method is exemplified below: (with evaporation InSnO
xBe example)
1, adopt InSn (10%) alloy as evaporation source, oxygen is as reacting gas.
2, background vacuum＜10 of vacuum evaporation chamber
-3Pa, the heated substrate temperature is 180 degree, has baffle plate to separate between substrate and the evaporation source.
3, to the logical high purity oxygen gas of vacuum chamber, the about 8sccm of flow, the control gas pressure in vacuum is at 3-5Pa.
4, heating InSn (10%) alloy, after the fusion, InSn (10%) alloy is evaporated, and forms InSnO with oxygen reaction back in gas phase
x, open baffle plate immediately, on the n-nc-Si/i-nc-Si/p-c-Si/Al structure for preparing, deposit InSnO
x, form nesa coating.
5, according to growth rate, deposition of transparent conductive film thickness is approximately 100nm, closes baffle plate, cooling.
Prepare the Ag grid with the mask plate evaporation technique in the inventive method, be exemplified below:
1, on the n-nc-Si/i-nc-Si/p-c-Si/Al structure for preparing, covers the mask plate that is carved with gate patterns.
2, adopt high-purity Ag as evaporation source, with Ta boat or molybdenum boat as heater.
3, background vacuum＜10 of vacuum evaporation chamber
-3Pa, substrate is not heated, and has baffle plate to separate between substrate and the evaporation source.
4, reach the background vacuum after, Ag is heated, after reaching molten condition, start vaporizer, open baffle plate immediately, the Ag that evaporates arrives the n-nc-Si/i-nc-Si/p-c-Si/Al body structure surface that has mask plate to cover, and is forming on the n-nc-Si/i-nc-Si/p-c-Si/Al structure and the corresponding grid line of figure on the mask plate, and figure can design as required.
5, control grid line thickness is closed baffle plate at 5～10 microns, cooling.
Also can prepare the Ag grid, be exemplified below with photoetching technique:
1, adopt high-purity Ag as evaporation source, with Ta boat or molybdenum boat as heater.
2, background vacuum＜10 of vacuum evaporation chamber
-3Pa, substrate is not heated, and has baffle plate to separate between substrate and the evaporation source.
3, reach the background vacuum after, Ag is heated, reach molten condition after, start vaporizer is opened baffle plate immediately, the Ag that evaporates is to the n-nc-Si/i-nc-Si/p-c-Si/Al body structure surface.
4, control grid line thickness is closed baffle plate at the 5-10 micron, cooling.
5, to the Ag photoetching of Ag/n-nc-Si/i-nc-Si/p-c-Si/Al, through steps such as resist coating, preceding baking, exposure, development, post bake, burn into remove photoresist, on the Ag/n-nc-Si/i-nc-Si/p-c-Si/Al structure, form the grid line corresponding on the Ag surface with the mask blank figure.
Mask plate and grid line structure can design as required: the hollow out figure on the stainless steel mask plate, and as shown in Figure 4, wherein thicker is main grid, is 100 microns, and thin grid are 30 microns, and lines are 2.5mm at interval.Adopt this mask plate or photoetching process to obtain Ag grid line structure on the n-nc-Si/i-nc-Si/p-c-Si/Al structure sample for preparing, as shown in Figure 5, wherein main grid is 120 microns, and thin grid are 50 microns, and lines are 2.5mm at interval.
Claims (2)
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| CN102484156A (en) * | 2009-06-30 | 2012-05-30 | Lg伊诺特有限公司 | Solar cell device and manufacturing method thereof |
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| EP2132783A1 (en) * | 2007-02-08 | 2009-12-16 | Suntech Power Co., Ltd. | Hybrid silicon solar cells and method of fabricating same |
| CN101325224B (en) * | 2008-07-11 | 2012-05-02 | 中国科学院电工研究所 | An Emitter Structure for Improving the Efficiency of Crystalline Silicon Solar Cells |
| CN101325225B (en) * | 2008-07-11 | 2011-06-15 | 中国科学院电工研究所 | Emitter electrode structure capable of improving crystal silicon solar battery shortwave response |
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