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CN100459124C - Multi-chip packaging structure - Google Patents

Multi-chip packaging structure Download PDF

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Publication number
CN100459124C
CN100459124C CNB200510137421XA CN200510137421A CN100459124C CN 100459124 C CN100459124 C CN 100459124C CN B200510137421X A CNB200510137421X A CN B200510137421XA CN 200510137421 A CN200510137421 A CN 200510137421A CN 100459124 C CN100459124 C CN 100459124C
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chip
carrier
disposed
packaging
packaging structure
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CN1992258A (en
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李政颖
钟智明
黄文彬
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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    • H10W72/20
    • H10W72/884
    • H10W90/734
    • H10W90/754

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Abstract

A multi-chip packaging structure comprises a loader, a first chip, a plurality of bumps, a second chip, a plurality of first bonding wires, a packaging unit, a spacer, a plurality of second bonding wires and a packaging colloid. The first chip has an active surface and a back surface, and the bump is disposed between the active surface of the first chip and the carrier, wherein the first chip is electrically connected to the carrier through the bump. The second chip is configured on the back surface of the first chip, and the first bonding wire is connected with the second chip and the loader. The packaging unit is arranged above the spacer and the second chip, the spacer is arranged on the first chip, and the second bonding wire is connected with the packaging unit and the loader. The packaging colloid is configured on the loader to cover the first chip, the second chip, partial area of the packaging unit, the convex block, the spacer, the first welding wire and the second welding wire.

Description

多芯片封装结构 Multi-chip package structure

技术领域 technical field

本发明涉及一种芯片封装结构,特别涉及一种多芯片封装结构(multi-chip package structure)。The invention relates to a chip package structure, in particular to a multi-chip package structure (multi-chip package structure).

背景技术 Background technique

在半导体产业中,芯片封装单元的生产,主要分为二个阶段,即芯片(chip)的制作阶段以及芯片的封装(packaging)阶段。在芯片的制作阶段中,主要是经由芯片(Wafer)制作、电路设计、图案化电路制作以及切割芯片等步骤,以形成具有特定功能的芯片。在芯片的封装阶段中,首先将芯片与封装载板电性连接,接着再以封装胶体将芯片包覆,以得到一芯片封装单元。芯片的封装目的在于防止芯片受到湿气、热量的影响,并提供芯片与外部电路之间电性连接的媒介,其中外部电路例如为印刷电路板(printed circuit board,PCB)或其它封装用基板。In the semiconductor industry, the production of a chip packaging unit is mainly divided into two stages, namely, a chip manufacturing stage and a chip packaging stage. In the chip manufacturing stage, chips with specific functions are mainly formed through steps such as wafer manufacturing, circuit design, patterned circuit manufacturing, and chip dicing. In the chip packaging stage, firstly, the chip is electrically connected to the packaging substrate, and then the chip is covered with packaging glue to obtain a chip packaging unit. The purpose of chip packaging is to prevent the chip from being affected by moisture and heat, and to provide a medium for electrical connection between the chip and an external circuit, where the external circuit is, for example, a printed circuit board (PCB) or other packaging substrates.

一般的电子组件,如内存、传感器等组件,大多是由多个具有不同或相同功能的芯片所组成,而这些包含有多个芯片的封装体多为堆栈型芯片封装结构或是其它型态的多芯片封装结构。General electronic components, such as memory, sensors and other components, are mostly composed of multiple chips with different or the same functions, and these packages containing multiple chips are mostly stacked chip packaging structures or other types Multi-chip package structure.

图1为美国专利第6,838,761号的已知多芯片封装结构的剖面示意图。请参照图1,已知的多芯片封装结构10包括一第一封装单元100、一第二封装单元200、多条焊线218与一封装胶体207,其中第二封装单元200配置于第一封装单元100上,而焊线218连接第二封装单元200与第一封装单元100之间。封装胶体207配置于第一封装单元100上,以包覆第二封装单元200与焊线218。FIG. 1 is a schematic cross-sectional view of a known multi-chip package structure of US Pat. No. 6,838,761. Please refer to FIG. 1, the known multi-chip packaging structure 10 includes a first packaging unit 100, a second packaging unit 200, a plurality of bonding wires 218 and a packaging compound 207, wherein the second packaging unit 200 is configured in the first package unit 100 , and the bonding wire 218 is connected between the second packaging unit 200 and the first packaging unit 100 . The encapsulant 207 is disposed on the first encapsulation unit 100 to cover the second encapsulation unit 200 and the bonding wire 218 .

更详细而言,第一封装单元100为已知的脚格状阵列封装体(Ball GridArray package,BGA package)。此外,第一封装单元100包括一封装基板112、一芯片114、多条焊线116、一封装胶体117与多个焊球118。其中,封装基板112具有金属层121、123与导电孔122,且金属层121与123经由导电孔122彼此电性连接。此外,芯片114由一黏着层113黏着于封装基板112上,而焊线116连接芯片114与封装基板112之间。封装胶体117配置于封装基板112上,以包覆芯片114与焊线116。另外,焊球118配置于封装基板112的金属层123上,且焊球118经由封装基板112与焊线116电性连接至芯片114。In more detail, the first packaging unit 100 is a known Ball Grid Array package (BGA package). In addition, the first packaging unit 100 includes a packaging substrate 112 , a chip 114 , a plurality of bonding wires 116 , a packaging compound 117 and a plurality of solder balls 118 . Wherein, the packaging substrate 112 has metal layers 121 , 123 and a conductive hole 122 , and the metal layers 121 and 123 are electrically connected to each other through the conductive hole 122 . In addition, the chip 114 is adhered on the packaging substrate 112 by an adhesive layer 113 , and the bonding wire 116 is connected between the chip 114 and the packaging substrate 112 . The packaging compound 117 is disposed on the packaging substrate 112 to cover the chip 114 and the bonding wire 116 . In addition, the solder balls 118 are disposed on the metal layer 123 of the packaging substrate 112 , and the solder balls 118 are electrically connected to the chip 114 through the packaging substrate 112 and the bonding wires 116 .

第二封装单元200为已知的垫格阵列封装体(land grid array package,LGA package),而第二封装单元200包括一封装基板212、一芯片214、多条焊线216与一封装胶体217。其中,封装基板212具有金属层221、223与导电孔222,而金属层221与223经由导电孔222彼此电性连接。此外,芯片214由一黏着层213黏着于封装基板212上,而焊线216连接芯片214与封装基板212之间。封装胶体217配置于封装基板212上,以包覆芯片214与焊线216。The second package unit 200 is a known pad grid array package (land grid array package, LGA package), and the second package unit 200 includes a package substrate 212, a chip 214, a plurality of bonding wires 216 and an encapsulant 217 . Wherein, the packaging substrate 212 has metal layers 221 , 223 and a conductive hole 222 , and the metal layers 221 and 223 are electrically connected to each other through the conductive hole 222 . In addition, the chip 214 is adhered on the packaging substrate 212 by an adhesive layer 213 , and the bonding wire 216 is connected between the chip 214 and the packaging substrate 212 . The encapsulant 217 is disposed on the encapsulation substrate 212 to cover the chip 214 and the bonding wire 216 .

第一封装单元100与第二封装单元200均使用的一定数量的焊线,以形成电性连接,然而形成这些焊线需要一定的时间。Both the first packaging unit 100 and the second packaging unit 200 use a certain number of bonding wires to form electrical connections, but it takes a certain amount of time to form these bonding wires.

发明内容 Contents of the invention

本发明的目的就是在于,提供一种多芯片封装结构,以降低所使用的焊线数量。The purpose of the present invention is to provide a multi-chip packaging structure to reduce the number of bonding wires used.

基于上述目的或其它目的,本发明提出一种多芯片封装结构,其包括一第一承载器、一第一芯片、多个第一凸块、一第二芯片、多条第一焊线、一封装单元、一间隔物、多条第二焊线与一第一封装胶体。其中,第一芯片具有一主动表面以及一背面,而第一凸块配置于第一芯片的主动表面与第一承载器之间,其中第一芯片通过第一凸块与第一承载器电性连接。第二芯片配置于第一芯片的背面上,而第一焊线连接第二芯片与第一承载器。封装单元配置于间隔物与第二芯片上方,而间隔物配置于第一芯片上,且第二焊线连接封装单元与第一承载器。第一封装胶体配置于第一承载器上,以包覆第一芯片、第二芯片、封装单元的部分区域、第一凸块、间隔物、第一焊线以及第二焊线。Based on the above purpose or other purposes, the present invention proposes a multi-chip packaging structure, which includes a first carrier, a first chip, a plurality of first bumps, a second chip, a plurality of first bonding wires, a The packaging unit, a spacer, a plurality of second bonding wires and a first packaging compound. Wherein, the first chip has an active surface and a back surface, and the first bump is disposed between the active surface of the first chip and the first carrier, wherein the first chip is electrically connected to the first carrier through the first bump. connect. The second chip is configured on the back side of the first chip, and the first bonding wire connects the second chip and the first carrier. The packaging unit is arranged on the spacer and the second chip, and the spacer is arranged on the first chip, and the second bonding wire connects the packaging unit and the first carrier. The first encapsulant is disposed on the first carrier to cover the first chip, the second chip, a partial area of the packaging unit, the first bump, the spacer, the first bonding wire and the second bonding wire.

依照本发明实施例,封装单元可以是包括一第二承载器、一第三芯片、多条第三焊线与一第二封装胶体,其中第三芯片配置于第二承载器上,且第三焊线连接于第二承载器与第三芯片之间。第二封装胶体配置于第二承载器上,以包覆第三芯片以及第三焊线。According to an embodiment of the present invention, the packaging unit may include a second carrier, a third chip, a plurality of third bonding wires, and a second encapsulant, wherein the third chip is disposed on the second carrier, and the third The bonding wire is connected between the second carrier and the third chip. The second encapsulant is disposed on the second carrier to cover the third chip and the third bonding wire.

依照本发明实施例,封装单元可以是包括一第二承载器、一第三芯片、多个第二凸块与一第二封装胶体,其中第三芯片配置于第二承载器上,且第二凸块配置于第三芯片与第二承载器之间。此外,第三芯片通过第二凸块与第二承载器电性连接。第二封装胶体配置于第二承载器上,以包覆第三芯片以及第二凸块。According to an embodiment of the present invention, the packaging unit may include a second carrier, a third chip, a plurality of second bumps, and a second encapsulant, wherein the third chip is disposed on the second carrier, and the second The bump is disposed between the third chip and the second carrier. In addition, the third chip is electrically connected to the second carrier through the second bump. The second encapsulant is disposed on the second carrier to cover the third chip and the second bump.

依照本发明实施例,第一封装胶体将封装单元的部分区域暴露。According to an embodiment of the present invention, the first encapsulant exposes a partial area of the encapsulation unit.

依照本发明实施例,间隔物可以是绝缘厚膜或拟芯片(dummy chip)。According to an embodiment of the present invention, the spacer may be an insulating thick film or a dummy chip.

依照本发明实施例,多芯片封装结构还包括一第三封装胶体,其包覆第二芯片、第一焊线、第一芯片的部分区域以及第一承载器的部分区域。According to an embodiment of the present invention, the multi-chip packaging structure further includes a third encapsulant covering the second chip, the first bonding wire, a partial area of the first chip, and a partial area of the first carrier.

依照本发明实施例,第一承载器具有一第一表面以及一第二表面,且第一芯片、第二芯片以及封装单元配置第一承载器的第一表面上。此外,多芯片封装结构还包括多个焊球,其配置于第一承载器的第二表面上,其中焊球通过第一承载器与第一芯片、第二芯片以及封装单元电性连接。According to an embodiment of the present invention, the first carrier has a first surface and a second surface, and the first chip, the second chip and the packaging unit are disposed on the first surface of the first carrier. In addition, the multi-chip packaging structure further includes a plurality of solder balls disposed on the second surface of the first carrier, wherein the solder balls are electrically connected to the first chip, the second chip and the packaging unit through the first carrier.

基于上述,本发明同时采用芯片倒装焊封装技术与引线焊接技术,而形成多芯片封装结构,因此本发明能够减少焊线的使用量。Based on the above, the present invention adopts flip-chip packaging technology and wire bonding technology simultaneously to form a multi-chip packaging structure, so the present invention can reduce the usage of bonding wires.

以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

附图说明 Description of drawings

图1为美国专利第6,838,761号的多芯片封装结构的剖面示意图;1 is a schematic cross-sectional view of a multi-chip packaging structure of US Patent No. 6,838,761;

图2为本发明第一实施例的多芯片封装结构的剖面示意图;2 is a schematic cross-sectional view of a multi-chip packaging structure according to a first embodiment of the present invention;

图3为本发明第二实施例的多芯片封装结构的剖面示意图。FIG. 3 is a schematic cross-sectional view of a multi-chip packaging structure according to a second embodiment of the present invention.

其中,附图标记Among them, reference signs

10:已知的多芯片封装结构         100:第一封装单元10: Known multi-chip packaging structure 100: The first packaging unit

112、212:封装基板               113、213:黏着层112, 212: Package substrate 113, 213: Adhesive layer

114、214:芯片                   116、216:焊线114, 214: chip 116, 216: welding wire

117、214:封装胶体               118、2190:焊球117, 214: Encapsulation colloid 118, 2190: Solder balls

121、123、221、223:金属层       122、222:导电孔121, 123, 221, 223: metal layer 122, 222: conductive hole

200:第二封装单元                218:焊线200: Second package unit 218: Bonding wire

207:封装胶体                    20、30:多芯片封装结构207: Packaging colloid 20, 30: Multi-chip packaging structure

2110:第一承载器                 2110a:第一表面2110: First carrier 2110a: First surface

2110b:第二表面                  2120:第一芯片2110b: second surface 2120: first chip

2120a:主动表面                  2120b:背面2120a: Active Surface 2120b: Backside

2130:第一凸块                   2140:第二芯片2130: The first bump 2140: The second chip

2150:第一焊线                   2160:第二焊线2150: The first welding line 2160: The second welding line

2170:第一封装胶体               2180:间隔物2170: First Encapsulation Colloid 2180: Spacer

2200、3200:封装单元             2210、3210:第二承载器2200, 3200: packaging unit 2210, 3210: second carrier

2220、3220:第三芯片             2230:第三焊线2220, 3220: The third chip 2230: The third bonding wire

2240、3240:第二封装胶体         3110:第三封装胶体2240, 3240: the second encapsulation colloid 3110: the third encapsulation colloid

3230:第二凸块3230: second bump

具体实施方式 Detailed ways

第一实施例first embodiment

图2为本发明第一实施例的多芯片封装结构的剖面示意图。请参考图2,本实施例的多芯片封装结构20包括一第一承载器2110、一第一芯片2120、多个第一凸块2130、一第二芯片2140、多条第一焊线2150、一封装单元2200、多条第二焊线2160与一第一封装胶体2170。其中,第一承载器2110具有一第一表面2110a以及一第二表面2110b,且第一芯片2120、第二芯片2140以及封装单元2200配置第一承载器2110的第一表面2110a上。此外,在本实施例中,第一承载器2110为封装基板,然而第一承载器2110也可以是导线架或其它型态的承载器。FIG. 2 is a schematic cross-sectional view of a multi-chip packaging structure according to a first embodiment of the present invention. Please refer to FIG. 2, the multi-chip packaging structure 20 of this embodiment includes a first carrier 2110, a first chip 2120, a plurality of first bumps 2130, a second chip 2140, a plurality of first bonding wires 2150, A packaging unit 2200 , a plurality of second bonding wires 2160 and a first packaging compound 2170 . Wherein, the first carrier 2110 has a first surface 2110 a and a second surface 2110 b, and the first chip 2120 , the second chip 2140 and the packaging unit 2200 are disposed on the first surface 2110 a of the first carrier 2110 . In addition, in this embodiment, the first carrier 2110 is a packaging substrate, however, the first carrier 2110 may also be a lead frame or other types of carriers.

第一芯片2120具有一主动表面2120a以及一背面2120b,而第一凸块2130配置于第一芯片2120的主动表面2120a与第一承载器2110之间,其中第一芯片2120通过第一凸块2130与第一承载器2110电性连接。即,第一芯片2120以芯片倒装焊封装(flip chip)方式与第一承载器2110电性连接。此外,第二芯片2140配置于第一芯片2120的背面2120b上,而第一焊线2150连接第二芯片2140与第一承载器2110。The first chip 2120 has an active surface 2120a and a back surface 2120b, and the first bump 2130 is disposed between the active surface 2120a of the first chip 2120 and the first carrier 2110, wherein the first chip 2120 passes through the first bump 2130 It is electrically connected with the first carrier 2110 . That is, the first chip 2120 is electrically connected to the first carrier 2110 in a flip chip package (flip chip) manner. In addition, the second chip 2140 is disposed on the back surface 2120 b of the first chip 2120 , and the first bonding wire 2150 connects the second chip 2140 and the first carrier 2110 .

封装单元2200配置于第一芯片2120上方,而第二焊线2160连接封装单元2200与第一承载器2110之间。此外,第一封装胶体2170配置于第一承载器2110上,以包覆第一芯片2120、第二芯片2140、封装单元2200的部分区域、第一凸块2130、第一焊线2150以及第二焊线2160。在本实施例中,第一封装胶体2170完全包覆封装单元2200,然而第一封装胶体2170也可以暴露出封装单元2200的部分区域。另外,在第一芯片2120与第一承载器2110之间也可以配置一底胶(underfill),而第一封装胶体2170也包覆此底胶。The package unit 2200 is disposed above the first chip 2120 , and the second bonding wire 2160 is connected between the package unit 2200 and the first carrier 2110 . In addition, the first encapsulant 2170 is disposed on the first carrier 2110 to cover the first chip 2120 , the second chip 2140 , part of the package unit 2200 , the first bump 2130 , the first bonding wire 2150 and the second Weld wire 2160. In this embodiment, the first encapsulant 2170 completely covers the encapsulation unit 2200 , however, the first encapsulant 2170 may also expose part of the encapsulation unit 2200 . In addition, an underfill can also be disposed between the first chip 2120 and the first carrier 2110 , and the first encapsulant 2170 also covers the underfill.

承上所述,封装单元2200可以是引线焊接封装体、芯片倒装焊封装封装体或是其它型态的封装体。在本实施例中,封装单元2200为引线焊接封装体,而封装单元2200包括一第二承载器2210、一第三芯片2220、多条第三焊线2230与一第二封装胶体2240,其中第二承载器2210可以是封装基板、导线架或其它类型的承载器。此外,第三芯片2220配置于第二承载器2210上,且第三焊线2230连接于第二承载器2210与第三芯片2220之间。另外,第二封装胶体2240配置于第二承载器2210上,以包覆第三芯片2220以及第三焊线2230。Based on the above, the package unit 2200 may be a wire-bonded package, a flip-chip package or other types of packages. In this embodiment, the packaging unit 2200 is a wire bonding package, and the packaging unit 2200 includes a second carrier 2210, a third chip 2220, a plurality of third bonding wires 2230 and a second packaging compound 2240, wherein the first The second carrier 2210 may be a package substrate, a lead frame or other types of carriers. In addition, the third chip 2220 is disposed on the second carrier 2210 , and the third bonding wire 2230 is connected between the second carrier 2210 and the third chip 2220 . In addition, the second encapsulant 2240 is disposed on the second carrier 2210 to cover the third chip 2220 and the third bonding wire 2230 .

值得注意的是,为了避免封装单元2200压迫到这些第一焊线2150,多芯片封装结构20还包括一间隔物2180,其配置于封装单元2200与第一芯片2120之间,而间隔物2180可以是绝缘厚膜或拟芯片,其中绝缘厚膜的材质可以是环氧树脂或是其它绝缘材料。此外,在间隔物2180与第一芯片2120之间,以及在间隔物2180与封装单元2200之间也可以配置一黏着层,以固定封装单元2200。It is worth noting that, in order to prevent the packaging unit 2200 from pressing on the first bonding wires 2150, the multi-chip packaging structure 20 further includes a spacer 2180, which is disposed between the packaging unit 2200 and the first chip 2120, and the spacer 2180 can be It is an insulating thick film or a quasi-chip, wherein the material of the insulating thick film can be epoxy resin or other insulating materials. In addition, an adhesive layer may also be disposed between the spacer 2180 and the first chip 2120 and between the spacer 2180 and the packaging unit 2200 to fix the packaging unit 2200 .

为了使得第一承载器2110能够电性连接至外界(例如是电路板),多芯片封装结构20还包括多个焊球2190,其配置于第一承载器2110的第二表面2110b上,其中焊球2190通过第一承载器2110与第一芯片2120、第二芯片2140以及封装单元2200电性连接。然而,焊球2190也可以变更成针脚(pin)或是其它类型的电性接点。相对于现有技术,本发明能够容置更多的芯片,并减少所需的焊线数量。即,本发明能够缩短形成焊线所需的时间,并增加电性接点数。In order to enable the first carrier 2110 to be electrically connected to the outside world (such as a circuit board), the multi-chip package structure 20 further includes a plurality of solder balls 2190 disposed on the second surface 2110b of the first carrier 2110, wherein the solder balls The ball 2190 is electrically connected to the first chip 2120 , the second chip 2140 and the packaging unit 2200 through the first carrier 2110 . However, the solder balls 2190 can also be changed into pins or other types of electrical contacts. Compared with the prior art, the invention can accommodate more chips and reduce the number of required bonding wires. That is, the present invention can shorten the time required to form the bonding wire and increase the number of electrical contacts.

第二实施例second embodiment

图3为本发明第二实施例的多芯片封装结构的剖面示意图。请参考图2,本实施例与上述实施例相似,其不同之处在于:本实施例的多芯片封装结构30还包括一第三封装胶体3110,其包覆第二芯片2140、第一焊线2150、第一芯片2120的部分区域以及第一承载器2110的部分区域。即,第三封装胶体3110用以保护这些第一焊线2150。此外,上述实施例的封装单元2200为引线焊接封装体,而本实施例的封装单元3200为芯片倒装焊封装封装体。FIG. 3 is a schematic cross-sectional view of a multi-chip packaging structure according to a second embodiment of the present invention. Please refer to FIG. 2 , this embodiment is similar to the above-mentioned embodiment, the difference is that: the multi-chip packaging structure 30 of this embodiment also includes a third packaging compound 3110, which covers the second chip 2140, the first bonding wire 2150 , a partial area of the first chip 2120 and a partial area of the first carrier 2110 . That is, the third encapsulant 3110 is used to protect the first bonding wires 2150 . In addition, the packaging unit 2200 of the above-mentioned embodiment is a wire-bonded package, while the packaging unit 3200 of this embodiment is a flip-chip package.

更详细而言,封装单元3200包括一第二承载器3210、一第三芯片3220、多个第二凸块3230与一第二封装胶体3240,其中第二承载器3210可以是封装基板或是导线架,而第三芯片3220配置于第二承载器3210上。此外,第二凸块3230配置于第三芯片3220与第二承载器3210之间,且第三芯片3220通过第二凸块3230与第二承载器3210电性连接。另外,第二封装胶体3240配置于第二承载器3210上,以包覆第三芯片3220以及第二凸块3230。In more detail, the package unit 3200 includes a second carrier 3210, a third chip 3220, a plurality of second bumps 3230 and a second encapsulant 3240, wherein the second carrier 3210 can be a package substrate or a wire rack, and the third chip 3220 is disposed on the second carrier 3210 . In addition, the second bump 3230 is disposed between the third chip 3220 and the second carrier 3210 , and the third chip 3220 is electrically connected to the second carrier 3210 through the second bump 3230 . In addition, the second encapsulant 3240 is disposed on the second carrier 3210 to cover the third chip 3220 and the second bump 3230 .

然而,在第二承载器3210与第三芯片3220之间也可以配置一底胶,以包覆第二凸块3230,且底胶与第二封装胶体3240可以同时配置或个别配置。此外,在第二封装胶体3240与第三封装胶体3110之间也可以配置一黏着层,以固定封装单元3200。另外,为了使得封装单元3200能够稳定地配置于第一承载器2110上方,在第一芯片2120上也可配置多个第二芯片2140与第三封装胶体3110。再者,在本实施例中,第一封装胶体2170完全包覆封装单元3200,然而第一封装胶体2170也可以暴露出封装单元3200的部分区域。However, a primer can also be disposed between the second carrier 3210 and the third chip 3220 to cover the second bump 3230 , and the primer and the second encapsulant 3240 can be disposed simultaneously or separately. In addition, an adhesive layer may also be disposed between the second encapsulant 3240 and the third encapsulant 3110 to fix the encapsulation unit 3200 . In addition, in order to enable the packaging unit 3200 to be stably disposed on the first carrier 2110 , a plurality of second chips 2140 and third encapsulants 3110 may also be disposed on the first chip 2120 . Furthermore, in this embodiment, the first encapsulant 2170 completely covers the encapsulation unit 3200 , however, the first encapsulant 2170 may also expose a part of the encapsulation unit 3200 .

当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should belong to the scope of protection of the appended claims of the present invention.

Claims (8)

1, a kind of multichip packaging structure is characterized in that, comprising:
One first carrier;
One first chip has an active surface and a back side;
A plurality of first projections are disposed between the described active surface and described first carrier of described first chip, and wherein said first chip electrically connects by described a plurality of first projections and described first carrier;
One second chip is disposed on the described back side of described first chip;
Many first bonding wires connect described second chip and described first carrier;
One sept is disposed on described first chip;
One encapsulation unit is disposed at described sept and described second chip top;
Many second bonding wires connect described encapsulation unit and described first carrier; And
One first packing colloid, be disposed on described first carrier, with the subregion that coats described first chip, described second chip, described encapsulation unit, described a plurality of first projections, described sept, described many first bonding wires and described many second bonding wires.
2, multichip packaging structure according to claim 1 is characterized in that, described encapsulation unit further comprises:
One second carrier;
One the 3rd chip is disposed on described second carrier;
Many articles the 3rd bonding wires are connected between described second carrier and described the 3rd chip; And
One second packing colloid is disposed on described second carrier, to coat described the 3rd chip and described many articles the 3rd bonding wires.
3, multichip packaging structure according to claim 1 is characterized in that, described encapsulation unit further comprises:
One second carrier;
One the 3rd chip is disposed on described second carrier;
A plurality of second projections are disposed between described the 3rd chip and described second carrier, and wherein said the 3rd chip electrically connects by described a plurality of second projections and described second carrier; And
One second packing colloid is disposed on described second carrier, to coat described the 3rd chip and described a plurality of second projection.
4, multichip packaging structure according to claim 1 is characterized in that, described first packing colloid exposes the subregion of described encapsulation unit.
5, multichip packaging structure according to claim 1 is characterized in that, described sept comprises insulative thick film or intends chip.
6, multichip packaging structure according to claim 1, it is characterized in that, also comprise one the 3rd packing colloid, in order to coat described second chip, described many first bonding wires, the subregion of described first chip and the subregion of described first carrier.
7, multichip packaging structure according to claim 1, it is characterized in that, described first carrier has a first surface and a second surface, and described first chip, described second chip and described encapsulation unit are disposed on the described first surface of described first carrier.
8, multichip packaging structure according to claim 7, it is characterized in that, also comprise a plurality of soldered balls, be disposed on the described second surface of described first carrier, wherein said a plurality of soldered balls electrically connect by described first carrier and described first chip, described second chip and described encapsulation unit.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040113253A1 (en) * 2002-10-08 2004-06-17 Chippac, Inc. Semiconductor stacked multi-package module having inverted second package
US20040212088A1 (en) * 2003-04-28 2004-10-28 Advanced Semiconductor Engineering Inc. Multi-chip package substrate for flip-chip and wire bonding
US20050046017A1 (en) * 2003-08-25 2005-03-03 Carlos Dangelo System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US20050133916A1 (en) * 2003-12-17 2005-06-23 Stats Chippac, Inc Multiple chip package module having inverted package stacked over die

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040113253A1 (en) * 2002-10-08 2004-06-17 Chippac, Inc. Semiconductor stacked multi-package module having inverted second package
US20040212088A1 (en) * 2003-04-28 2004-10-28 Advanced Semiconductor Engineering Inc. Multi-chip package substrate for flip-chip and wire bonding
US20050046017A1 (en) * 2003-08-25 2005-03-03 Carlos Dangelo System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US20050133916A1 (en) * 2003-12-17 2005-06-23 Stats Chippac, Inc Multiple chip package module having inverted package stacked over die

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