CN100456515C - Method for manufacturing electrode isolation wall - Google Patents
Method for manufacturing electrode isolation wall Download PDFInfo
- Publication number
- CN100456515C CN100456515C CNB2004100886659A CN200410088665A CN100456515C CN 100456515 C CN100456515 C CN 100456515C CN B2004100886659 A CNB2004100886659 A CN B2004100886659A CN 200410088665 A CN200410088665 A CN 200410088665A CN 100456515 C CN100456515 C CN 100456515C
- Authority
- CN
- China
- Prior art keywords
- electrode
- substrate
- photoresist layer
- isolated wall
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 36
- 238000002955 isolation Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 42
- 239000010409 thin film Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 32
- 238000005516 engineering process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- -1 lithium metals Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an electrode isolation wall and a manufacturing method thereof, wherein an electrode isolation wall structure which is vertical to a first electrode and used for isolating a second electrode and is formed by an inorganic dielectric material and has a T-shaped section is formed on a substrate on which a transverse strip-shaped first electrode is formed; the manufacturing method is that the electrode isolation wall is manufactured by two times of inorganic film forming, the finished T-shaped electrode isolation wall comprises two parts, one part is a columnar substrate, the other part is a transverse strip-shaped upper cover used for forming an outward-suspended convex shape, when a subsequent second electrode coating film is coated, the transverse strip-shaped transverse protrusion can separate the metal film of the second electrode from being formed between the two electrode isolation walls, and therefore the purpose of electrode separation is achieved.
Description
Technical field
The present invention relates to a kind of electrode isolated wall and preparation method thereof, particularly a kind of electrode isolated wall and production method thereof of making the Organic Light Emitting Diode that inorganic thin film forms can be applicable to the making of the panel of Organic Light Emitting Diode.
Background technology
Because Organic Light Emitting Diode (Organic light emitting diode; OLED) possess self-luminous, thin thickness, reaction speed is fast, the visual angle is wide, resolution is good, high brightness, can be used for flexibility panel, and multiple advantages, the film-type LCD that is considered to continue (Thin film transistor liquid crystal display such as the serviceability temperature scope is wide; TFT-LCD) the flat-panel screens technology of a new generation afterwards, and the principle of luminosity of this Organic Light Emitting Diode is to utilize properties of materials, with electron hole combination on luminescent layer, the energy that produces is promoted to excitation state with light emitting molecule by ground state, when electronics falls back ground state by excitation state, its energy disengages with the form of ripple, thereby reaches the generation of the light-emitting component that different wave length is arranged.Wherein anode is an ITO electro-conductive glass film, mode with sputter or evaporation is attached on glass or the transparent plastic substrate, negative electrode then contains magnesium (Mg), aluminium (Al), lithium metals such as (Li), then be the light-emitting zone that a plurality of organic films form between two electrodes, comprise hole injection layer (HoleInjection Layer; HIL), hole transport layer (Hole Transport Layer; HTL), organic luminous layer (Emitting layer), and electron transfer layer (Electron TransportLayer; ETL), when practical application is produced in batches, consider, also can comprise other different films sometimes based on different demands.
Though Organic Light Emitting Diode has many advantages, yet, in the manufacturing technology of the electrode isolated wall of Organic Light Emitting Diode, the existing U.S. Pat 5 that proposes with northeastern Japan pioneer (Tohoku PioneerElectronic) company, 701,055, US 5,962,970, US6,099,746, US 6,137, the technology of utilizing organic photoresist and using twice gold-tinted technology to finish that discloses in 220 is the master, utilizes the eurymeric photoresist to finish an insulated photo-etching rubber as substrate earlier, forms the interlayer that the outer outstanding protrusion with del becomes strip with a negative photoresist again.The defective of this type of technology is, the electrode isolated wall of finishing is to be made of organic photoresist, but the mechanical strength of organic photoresist is fragile, on subsequent technique, be subject to external force and damage, and the electrode isolated wall that organic photoresist is made may be separated out organic substance, and influences the performance of other organic substance on the panel, simultaneously, also because the rerum natura of organic photoresist limits the shortcoming that this electrode isolated wall has size to be difficult for dwindling.
Summary of the invention
So main purpose of the present invention is to solve the defective that above-mentioned prior art exists, and utilizes inorganic thin film to make the formation electrode isolated wall,, strengthen the fragile electrode isolated wall that former organic photoresist is formed by the harder mechanical strength of inorganic material.
Another object of the present invention is to utilize the rerum natura of inorganic material, make by the inorganic electrode isolated wall of forming and can not separate out organic substance, and influence other organic material of panel performance should be arranged.
The present invention has formed on the substrate of first electrode of a horizontal stripe shape one, and forming one, vertical with first electrode this electrode isolated wall is formed by inorganic dielectric material in order to cut off second electrode, and section becomes the electrode isolation wall construction of T shape structure.
Manufacture method of the present invention, mainly be to have formed on the substrate of first electrode of a horizontal stripe shape one, formation one is vertical with first electrode in order to cut off the electrode isolation wall construction of second electrode, the making flow process is: (a), on the substrate of coating sensing optical activity first photoresist layer, form the electrode isolated wall place in desire and utilize one first mask plate to produce shielding through etch process.(b), deposit one deck in the plated film mode and have the inorganic dielectric film that is electrically insulated, be used as the substrate of electrode isolated wall.(c), remove this shielding, to peel off (Lift-off) method an inoranic membrane constitutes the substrate of column structure.(d), cover on this substrate with second photoresist layer again, deposition one deck first inorganic thin film, coating the 3rd photoresist layer on this first inorganic thin film again and on this second photoresist layer.(e), use one second mask plate through etch process after the 3rd photoresist layer forms a groove (trough), remove first inorganic thin film of this bottom portion of groove with etching mode, second photoresist layer that exposes with this groove of dry ecthing mode etching below again, the cylindrical substrate in being embedded in second photoresist layer is exposed till the height of needs.(f), deposit one deck second inorganic thin film to groove, the loam cake of formation one this substrate exposed portions serve of coating.(g), remove the 3rd photoresist layer, first inorganic thin film, and second photoresist layer, promptly finish the electrode isolated wall that a section by substrate and loam cake combination becomes T shape structure to peel off method.
Description of drawings
Fig. 1 is the generalized section of electrode isolated wall of the present invention.
Fig. 2～Figure 10 is the generalized section that electrode isolated wall of the present invention is made flow process.
Embodiment
Relevant detailed content of the present invention and technical descriptioon, existing accompanying drawings is as follows:
See also shown in Figure 1, it is the schematic diagram of electrode isolated wall of the present invention, as shown in the figure, a kind of electrode isolated wall 20 mainly is to have formed on the substrate 10 of first electrode of a horizontal stripe shape one, form a vertical electrode isolated wall 20 with first electrode in order to cut off second electrode, the invention is characterized in, this electrode isolated wall 20 is formed by the inorganic dielectric material of selecting from silicon-dioxide-substrate (SiO2-based), siloxy group (Siloxane-based), silication nitrogen base (SiN) and ceramic-like materials such as (ceramic-like), and section becomes T shape structure.
See also Fig. 2～shown in Figure 10, the manufacture method of electrode isolated wall 20 of the present invention, mainly be to have formed on the substrate 10 of first electrode of a horizontal stripe shape one, form a vertical electrode isolated wall 20 in order to the T shape structure of cutting off second electrode with first electrode, the main making flow process of the present invention is:
A), on the substrate 10 of a coating sensing optical activity photoresist layer 31, form electrode isolated wall 20 places in desire and utilize one first mask plate 41 to make gold-tinted developing process formation pattern transfer on this photoresist layer 31 (as shown in Figure 2), through etch process this photoresist layer 31 is made for a shielding 311 again.
B), formed in shielding 311 in the plated film mode that deposition one deck has the inorganic dielectric film that is electrically insulated on the substrate 10 of pattern, be used as the substrate 21 (as shown in Figure 3) of electrode isolated wall 20.Wherein, this plated film mode is that physical vapor deposition (PVD) method or chemical vapor deposition (CVD) method deposition one deck selects that one of them has inorganic dielectric (dielectric) thin-film material that is electrically insulated from silicon-dioxide-substrate, siloxy group, silication nitrogen base and ceramic-like etc.
C), remove this shielding 311 to peel off method again, one constitute the substrate 21 (as shown in Figure 4) of column structure with inoranic membrane.
D), cover on these substrates 10, and wrap up this substrate 21 at coating one photoresist layer 32 on the substrate 10 that forms substrate 21.On this photoresist layer 32, deposit one deck as the slow inorganic thin film 33 that fills layer with the plated film mode again, again another photoresist layer 34 (as shown in Figure 5) of coating on this inorganic thin film 33.Wherein, this plated film mode be physical vaporous deposition or chemical vapour deposition technique deposition one deck select from silicon-dioxide-substrate, siloxy group, silication nitrogen base, and ceramic-like etc. one of them have the inorganic dielectric thin-film material that is electrically insulated.
E), this step uses one second mask plate 42 to form pattern transfer in this photoresist layer 34 (as shown in Figure 6) through making the gold-tinted developing process, again through the groove 50 of etch process directly over these photoresist layer 34 formation one are positioned at this substrate 21, and the width of this groove 50 is greater than the width of this substrate 21, and wherein the development of the function of this inorganic thin film 33 when this forms groove 50 patterns as second mask plate 42 stops to use automatically.
Using etching mode (can adopt wet type or dry-etching) to remove the inorganic thin film 33 (as shown in Figure 7) of these groove 50 bottoms again, is example with the dry-etching method, can select CF4 gas to do etching when this inorganic thin film 33 is SiO2, and etched course of reaction is as follows:
CF
4(g)→2F
(g)+CF
2(g)
SiO
2(g)+4F
(g)→SiF
4(g)+2O
(g)
SiO
2(g)+2CF
2(g)→SiF
4(g)+2CO
(g)
In above-mentioned etched process, but equipment such as application surface contourgraph measure whether etching is finished, and the selection of this etching gas need be considered the selective problems that whether can etch into as the photoresist layer 32 of shielding certainly.
Next utilize oxygen containing gas to make the reacting gas of these photoresist layer 32 dry ecthings, with the photoresist layer 32 that expose these groove 50 belows of dry ecthing mode etching, the cylindrical substrate 21 in being embedded in photoresist layer 32 is exposed (as shown in Figure 8) till the height of needs.The purpose of this technology is to expose one section height of substrate 21, needed thickness when making as follow-up loam cake 22.
F), and then have the dielectric inorganic film that is electrically insulated to groove 50 with plated film mode such as physical vaporous deposition or chemical vapour deposition technique deposition one deck again, form a loam cake 22 (as shown in Figure 9) that coats these substrate 21 exposed portions serve.Wherein, this dielectric inorganic film material is one of them of selecting from silicon-dioxide-substrate, siloxy group, silication nitrogen base and ceramic-like etc.Note herein when this loam cake 22 of deposition and need consider the adhesive force of this substrate 21 and loam cake 22 and the problems such as shadow effect that this loam cake 22 thickness are caused.
G), peel off this photoresist layer 34, inorganic thin film 33, and photoresist layer 32 with the method for peeling off at last, promptly finish the electrode isolated wall 20 (as shown in figure 10) that a section by substrate 21 and loam cake 22 combinations becomes T shape structure.
The present invention is the electrode isolated wall 20 with twice inorganic film forming manufacturing, the electrode isolated wall of finishing 20 is a T shape structure, and this T shape structure comprises two parts, the one, the substrate 21 of column, another is that the loam cake 22 of horizontal stripe shape is used for being formed with the outer outstanding shape of protruding, when the follow-up second electrode plated film gets on because of the horizontal protrusion of horizontal stripe shape, the metal film forming that can cut off second electrode between two electrode isolated walls 20, thereby reach the purpose of electrode separation.
The present invention compares with other method of the prior art, has following advantage:
1, utilization has the electrode isolated wall that the dielectric inorganic film that is electrically insulated replaces traditionally fragile photoresist formation, by the harder mechanical strength of inorganic material, strengthens former organic photoresist and forms than fragile electrode isolated wall.
, the electrode isolated wall formed by inorganic thin film, remove and can strengthen electrode isolated wall, and, and influence other organic material of panel performance should be arranged, and cause the defective of display floater because the electrode isolated wall that inorganic thin film is formed can not separated out organic substance.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All in the spirit and principles in the present invention, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the manufacture method of an electrode isolated wall, mainly be to have formed on the substrate (10) of first electrode of a horizontal stripe shape one, form vertical electrode isolated wall (a 20) structure with described first electrode, it is characterized in that described making flow process is in order to cut off second electrode:
A), on the substrate (10) of coating sensing optical activity first photoresist layer (31), form electrode isolated wall (20) in desire and locate to utilize one first mask plate (41) to make shielding (311) through etch process;
B), deposit one deck in the plated film mode and have the inorganic dielectric film that is electrically insulated, be used as the substrate (21) of electrode isolated wall (20);
C), remove described shielding (311) to peel off method, an inoranic membrane, constitute the substrate (21) of column structure;
D), again use second photoresist layer (32) to cover on the described substrate (10), and go up deposition one deck first inorganic thin film (33), go up coating the 3rd photoresist layer (34) at described first inorganic thin film (33) again at described second photoresist layer (32);
E), use one second mask plate (42) through etch process after described the 3rd photoresist layer (34) forms a groove (50), remove first inorganic thin film (33) of described groove (50) bottom with etching mode, second photoresist layer (32) that exposes with the described groove of dry ecthing mode etching (50) below again is till the cylindrical substrate (21) in being embedded in described second photoresist layer (32) is exposed the height of needs;
F), deposit one deck second inorganic thin film to groove (50), the loam cake (22) of formation one coating described substrate (21) exposed portions serve;
G), remove described the 3rd photoresist layer (34), first inorganic thin film (33), and second photoresist layer (32), promptly finish the electrode isolated wall (20) that a section by substrate (21) and loam cake (22) combination becomes T shape structure to peel off method.
2. manufacture method according to claim 1 is characterized in that, described plated film mode is one of them of physical vaporous deposition, chemical vapour deposition technique.
3. manufacture method according to claim 1 is characterized in that, described inorganic dielectric thin-film material is selected from silicon-dioxide-substrate, siloxy group, silication nitrogen base, and one of them of ceramic-like material.
4. manufacture method according to claim 1 is characterized in that, described groove (50) be positioned at described substrate (21) directly over.
5. manufacture method according to claim 1 is characterized in that, the width of described groove (50) is greater than the width of described substrate (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100886659A CN100456515C (en) | 2004-11-15 | 2004-11-15 | Method for manufacturing electrode isolation wall |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100886659A CN100456515C (en) | 2004-11-15 | 2004-11-15 | Method for manufacturing electrode isolation wall |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1776931A CN1776931A (en) | 2006-05-24 |
| CN100456515C true CN100456515C (en) | 2009-01-28 |
Family
ID=36766316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100886659A Expired - Fee Related CN100456515C (en) | 2004-11-15 | 2004-11-15 | Method for manufacturing electrode isolation wall |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100456515C (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335068A (en) * | 1997-05-30 | 1998-12-18 | Idemitsu Kosan Co Ltd | Light-emitting display device |
| CN1211829A (en) * | 1997-09-18 | 1999-03-24 | Lg电子株式会社 | Organic electroluminescent device and method for fabricating the same |
| CN1395449A (en) * | 2002-06-14 | 2003-02-05 | 光磊科技股份有限公司 | Organic electroluminescence element |
| CN1416300A (en) * | 2002-11-12 | 2003-05-07 | 清华大学 | Orgnic electroluminescence device and its preparation device |
-
2004
- 2004-11-15 CN CNB2004100886659A patent/CN100456515C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335068A (en) * | 1997-05-30 | 1998-12-18 | Idemitsu Kosan Co Ltd | Light-emitting display device |
| CN1211829A (en) * | 1997-09-18 | 1999-03-24 | Lg电子株式会社 | Organic electroluminescent device and method for fabricating the same |
| CN1395449A (en) * | 2002-06-14 | 2003-02-05 | 光磊科技股份有限公司 | Organic electroluminescence element |
| CN1416300A (en) * | 2002-11-12 | 2003-05-07 | 清华大学 | Orgnic electroluminescence device and its preparation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1776931A (en) | 2006-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11251410B2 (en) | Flexible display substrate and method for manufacturing the same | |
| US20190024469A1 (en) | Flexible display apparatus and an encapsulation method thereof | |
| CN106449717B (en) | Organic electroluminescent device substrate, display device and manufacturing method | |
| US10916600B2 (en) | Flexible touch control display screen and method for manufacturing same | |
| CN109599429A (en) | Display panel and its manufacturing method | |
| CN108198843B (en) | Display panel preparation method | |
| CN106847867B (en) | Organic electroluminescent display device, preparation method thereof and display device | |
| EP3333922B1 (en) | Organic luminescence unit and manufacturing method therefor | |
| KR20140042698A (en) | Organic light emitting diode, touch display device and method for fabricating the same | |
| CN107068721A (en) | Pixel unit, manufacturing method thereof, and display device | |
| CN111524949B (en) | Display panel, manufacturing method thereof and display device | |
| CN108550711A (en) | OLED device and its manufacturing method, OLED display | |
| CN107546246A (en) | Flexible OLED display part and preparation method | |
| WO2018090444A1 (en) | Oled substrate and manufacturing method thereof | |
| WO2023246810A1 (en) | Display panel, display device, and manufacturing method for display panel | |
| US6844675B2 (en) | Organic light emitting diode display with an insulating layer as a shelter | |
| CN100456515C (en) | Method for manufacturing electrode isolation wall | |
| JP2006002243A (en) | Mask, mask manufacturing method, film forming method, electronic device, and electronic apparatus | |
| WO2022104937A1 (en) | Manufacturing method for oled panel, and oled panel | |
| CN112563310A (en) | OLED backboard structure, manufacturing method and display device | |
| US20190027709A1 (en) | Method for manufacturing flexible organic light emitting diode(oled) display device | |
| CN116722082A (en) | Preparation method of array substrate, array substrate and display panel | |
| CN110600519B (en) | Display substrate, manufacturing method thereof, and display device | |
| KR100469251B1 (en) | Glass Shadow Mask and Organic Electroluminescence Display Device Using the same | |
| TWI254597B (en) | Electrode insulator and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090128 Termination date: 20201115 |