CN100451788C - Electro-optical device, wiring board, and electronic apparatus - Google Patents

Abstract

An electrooptical device of the invention is characterised in that a separation region (30) is provided in a separation region (R2) which extends in a Y direction among regions extending in a grating shape to partition off a plurality of lower light-shielding films (501). Lead-out wires (241a) and (242a) are formed extending in the Y direction on an insulating film (91) and arrayed in an X direction in plane view so that a separation region (R1) partitioning off the shield-films may not overlap the separation region (R2). Therefore, when a liquid crystal device (1) is manufactured or in operation, a crack generated in the separation area (30) is less propagated to the separation region (R1) through the insulating film (91).

Description

Electro-optical devices, wiring substrates, and electronic equipment

technical field

The present invention relates to the technical field of electro-optical devices such as liquid crystal devices, and particularly relates to the technical field of electro-optical devices provided with frame light-shielding films for defining image display regions and electronic equipment provided with such electro-optical devices.

Background technique

In this electro-optic device, the element array substrate and the counter substrate are disposed opposite to each other, and the element array substrate is formed with display electrodes such as pixel electrodes and strip electrodes, various wirings such as data lines and scanning lines, and pixel switches. Switching elements such as thin film transistors (hereinafter, referred to as TFT as appropriate), thin film diodes (hereinafter, referred to as TFD as appropriate), etc., the opposing substrate is formed with a band-shaped or entire surface-formed opposing electrode and a light-shielding film wait. Between this pair of substrates, electro-optic substances such as liquid crystals are surrounded by sealing members, and an image display device in which pixel electrodes are arranged is arranged in the center of the sealing area where the sealing members exist (that is, the area on the substrate facing the liquid crystals, etc.). area. Here, especially in plan view (that is to say, viewed from the direction facing the image display area) it is frame-shaped along the inner contour of the sealing area, and the frame area of the image display area is, for example, made of The shading film is specified with the same film.

Electro-optical devices with built-in peripheral circuits, in which peripheral circuits such as scanning line driving circuits, data line driving circuits, sampling circuits, and inspection circuits are formed on an element array substrate located in a peripheral area around an image display area, have also become widespread. Therefore, in the peripheral area, there are generally wirings drawn from the image display area to the peripheral area.

In such an electro-optical device, a pattern portion composed of wiring and circuit elements existing in a frame region on an element array substrate is formed using a patterned conductive film such as an Al film. Therefore, especially when the incident light has high intensity and includes a large amount of oblique components as in a projector application, the incident light is reflected by the surface of the pattern part according to the reflectance thereof, and the incident light passes through the gap of the pattern part. The light reflected by the pattern portion in this way is reflected by, for example, a frame light-shielding film made of Cr (chrome) or the like on the opposing substrate.

The internally reflected light reflected by the frame light-shielding film and the light transmitted through the graphic part include, for example: the reflected light reflected from the back surface of the element array substrate, the internally reflected light reflected by the frame light-shielding film, the light transmitted through the graphic part, and the light transmitted through the graphic part. The reflected light reflected by optical devices such as polarizing plates, phase difference plates, and dust-proof glass installed on the exit side of the device is combined with multiple electro-optical devices as light valves to emit from other electro-optical devices and then be used as a multi-chip projector. The return light returned through the synthetic optical system and the internal reflection light reflected by the graphic part and the frame light-shielding film, etc., and these lights are finally mixed with the outgoing light to exit the electro-optic device.

As a result, there is a problem that a shading pattern corresponding to reflection and transmission of the pattern portion (for example, a shading pattern such as a stripe pattern when a plurality of wiring lines are arranged) is reflected near the edge of the display image. As an example of a method for solving this problem, Patent Document 1 discloses an electro-optical device in which a lower light-shielding film is formed in a part of a frame region on an element array substrate.

Patent Document 1: JP-A-2003-177427

However, in such an electro-optical device, cracks may be generated in regions separating the lower light-shielding films from each other during manufacturing or driving. The crack propagates in the multilayer structure on the element array substrate along the edges and corners of the lower light-shielding film, and sometimes cuts the wiring formed on the upper layer side of the lower light-shielding film. Therefore, there is a problem that the yield of the electro-optical device is lowered or the reliability of the electro-optical device is lowered due to crack propagation. More specifically, it is difficult to drive the electro-optical device when, for example, the power wiring is cut due to the propagation of a crack. The technology disclosed in Patent Document 1 merely provides an electro-optic device in which a lower light-shielding film is formed on an element array substrate from the viewpoint of preventing display image defects. In addition, according to Patent Document 1, there is no mention of a multilayer structure for preventing generated cracks from propagating on the element array substrate. In addition, in Patent Document 1, there is no enlightening description about the possibility of occurrence of a problem due to the cutting of the wiring or the like due to the propagation of the crack.

Contents of the invention

Therefore, the present invention is made in view of the above-mentioned problems, and its object is to provide an electro-optical device, a wiring device, and an electronic device for reducing, for example, cracks in a multilayer structure on an array substrate of an electro-optic device, and Propagation of cracks can be suppressed even when cracks are generated.

In order to solve the above problems, the electro-optic device according to the present invention is characterized by comprising: a substrate; a plurality of pixels formed in an image display region on the substrate; and a plurality of light shielding films formed in a peripheral region located around the image display region. It is island-shaped; the separation region is a region extending in the first direction among the regions between the plurality of light-shielding films and the light-shielding films; the insulating film covers the plurality of light-shielding films and the separation region; and a plurality of first The conductive films are respectively formed on the insulating film so as to extend in the first direction, and are arranged in a direction intersecting the first direction; The separation region extending in the first direction does not overlap with the separation regions extending in the first direction of the plurality of light-shielding films.

Furthermore, it is preferable that the light-shielding film is a lower light-shielding film formed on the lower side of the circuit provided in the peripheral region.

According to such an electro-optical device according to the present invention, it is possible to reduce the propagation of cracks generated in the separation portion through the insulating film covering the separation region and the lower light-shielding film. Therefore, it is possible to reduce damage to the multilayer structure formed on the upper side of the insulating film due to propagation of cracks. In addition, as described below, the occurrence of cracks in each layer on the substrate can be reduced by the layout of the plurality of lower light-shielding films and the plurality of first conductive films formed on the substrate.

The lower side light-shielding film is provided to reduce, for example, stripe-like bright and dark patterns on the display image caused by internally reflected light reflected by the frame light-shielding film. The lower light-shielding film is directly or indirectly formed on the substrate in a peripheral region extending along the periphery of the image display region.

A part of the insulating film is provided in a separation region extending along one side of the lower light-shielding film among the regions separating the plurality of lower light-shielding films from each other, for example, when an insulating film covering the plurality of lower light-shielding films is formed. , A part of the insulating material constituting the insulating film is solidified in the separation region.

Here, when the width of the isolation region is less than 1 μm, the insulating material uniformly enters the isolation region, and the upper surface of a part of the insulating film extending over the isolation region becomes a flat surface. Therefore, a depression, which is one cause of crack generation, is not formed in the separation area. Also, when the width of the separation region is 6 μm or more, the upper surface of the insulating film extending over the separation region becomes flat enough not to cause cracks, and cracks hardly occur in the separation region. When the width of the separation region is greater than or equal to 3 μm and less than or equal to 5 μm, experimentally or theoretically, a depression tends to be generated on the separation region in many cases, leading to the occurrence of cracks. Therefore, as described below, the occurrence and propagation of cracks can be effectively reduced when the width of the separation region is greater than or equal to 3 μm and less than or equal to 5 μm by utilizing the positional relationship between the first conductive film and the lower light-shielding film. Note that the above-mentioned width of the separation region where cracks are likely to occur is an example, and the depression generated in the separation region varies depending on the insulating material constituting the insulating film and the manufacturing conditions.

A plurality of first conductive films are formed on the insulating film so as to extend along the above-mentioned one side, and in a manner that the regions separated from each other do not overlap with the above-mentioned separation region, and are formed along the above-mentioned one side in plan view. Arranged in a cross direction. Because the region that is separated from each other by a plurality of the first conductive films does not overlap with the separation region on the plane, it is possible to reduce the number of cracks from the separation portion on one side of the lower side light-shielding film and the plurality of first conductive films that are separated from each other when the electro-optical device is manufactured or driven. The area-wide propagation of the conductive film. More specifically, it is possible to suppress, for example, the occurrence and propagation of cracks that are prone to occur due to the overlapping of portions with weaker mechanical strengths than the lower light-shielding film made of aluminum, chromium, etc., and the first conductive film. The first conductive film is made of a metal film, and the first conductive film is made of a semiconductor film.

As described above, according to the electro-optical device according to the present invention, it is possible to reduce the occurrence and propagation of cracks, and it is also possible to reduce the number of layers formed on the upper layer side of the plurality of first conductive films from being cut due to cracks. Thereby, the electro-optic device of the present invention can improve the yield by reducing the defects in the manufacture of the electro-optic device. In addition, according to the electro-optical device according to the present invention, it is possible to reduce failures during driving, and it is possible to provide an electro-optical device with excellent reliability.

In one aspect of the electro-optic device according to the present invention, it may further include a second conductive film formed on the upper layer side of the plurality of first conductive films and at least partially overlapped with the lower light-shielding film in the first direction. The extended separation region extends in a direction intersecting the above-mentioned first direction.

According to this aspect, it is possible to reduce the occurrence of cutting of the second conductive film due to the propagation of cracks. Since the second conductive film extends in a direction intersecting the above-mentioned one side so as to partially overlap the above-mentioned separation region, for example, when a crack propagates along one side of the lower light-shielding film, the second conductive film is blocked. cut off. Therefore, by preventing the crack from propagating along one side, the cutting of the second conductive film can be reduced.

Here, the "second conductive film" refers to, for example, a metal film such as aluminum, and more specifically, for example, a power wiring for supplying driving power for driving various circuits included in the electro-optical device. Since the disconnection of such power supply lines is reduced, for example, each circuit included in the electro-optical device can be normally driven.

In another aspect of the electro-optic device of the present invention, the plurality of lower light-shielding films may be arranged in a matrix in the peripheral region, and the plurality of first conductive films may be arranged in a direction intersecting with the first direction in the direction intersecting the first direction. The plurality of lower side light-shielding films are arranged at intervals corresponding to intervals.

According to this method, compared with the case where the lower side light-shielding film is formed as a single light-shielding film on the peripheral area, since a plurality of lower side light-shielding films are arranged in a matrix in advance, it is possible to ease the burden on the upper layer and the lower side light-shielding film. The stress applied on the lower layer side can reduce the occurrence and propagation of cracks. More specifically, for example, when the lower side light-shielding film is formed on the peripheral region as one piece of light-shielding film, especially between the lower side light-shielding film and the upper or lower layer of the lower side light-shielding film in the edge region of the peripheral region. Stress increases, prone to cracks and their propagation. Therefore, by arranging a plurality of lower light-shielding films in a matrix, stress can be relieved, and return light and the like can be reduced.

In addition, as long as the light leaked to the image display area through the areas separated from each other by the plurality of lower light-shielding films does not affect the displayed image, the areas separated from each other by the plurality of lower light-shielding films are separated in advance. If it is set narrower, the picture quality of the displayed image can be maintained, and the occurrence and propagation of cracks can be reduced. Furthermore, since the plurality of first conductive films are arranged at intervals corresponding to the intervals of the plurality of lower light-shielding films in the direction intersecting the first direction, it is also possible to reduce the number of gaps between the plurality of first conductive films and the plurality of light-shielding films. The stress acting between the lower shading films.

In another aspect of the electro-optical device of the present invention, the planar shape of the first conductive film may be a symmetrical shape centered on the separation region in a direction intersecting the first direction.

According to this method, for example, when the first conductive film is formed on the insulating film by a thin film forming method such as vapor deposition or sputtering, the stress acting on the insulating film from the first conductive film can be reduced, and the stress on the insulating film can be indirectly reduced. Stress acting on the separation part. Therefore, it is possible to reduce the occurrence of cracks in the separation region, and to suppress the tendency of cracks to easily propagate due to stress acting on the lower layer side of the first conductive film.

In another aspect of the electro-optical device of the present invention, it further includes a plurality of third conductive films formed in a layer different from the plurality of first conductive films, extending in a direction intersecting the first direction, and The above-mentioned first direction is arranged; among the above-mentioned plurality of first conductive films, the lengths of the above-mentioned first direction of a first conductive film adjacent to each other and other first conductive films are different from each other, and the above-mentioned one first conductive film can also pass through One conductive portion extending in a direction intersecting with the substrate surface of the above-mentioned substrate is electrically connected to one of the plurality of third conductive films, and the other first conductive film is connected to the substrate surface by intersecting with the substrate surface. The other conductive portion extending in the direction of the above-mentioned third conductive film is electrically connected to the other third conductive film among the plurality of third conductive films.

According to this method, one first conductive film and each of the other first conductive films, and The plurality of third conductive films are electrically connected.

One first conductive film and another first conductive film are adjacent to each other along one side, and have different lengths along one side. More specifically, one first conductive film and another first conductive film whose length along one side is shorter or longer than one first conductive film are arranged in the peripheral region along a direction intersecting one side.

Such a plurality of first conductive films including one first conductive film and other first conductive films are electrically connected to other conductive parts different from the above-mentioned plurality of first conductive films, for example, through one conductive part and other conductive parts as a contact hole or the like. film and a plurality of third conductive films respectively formed in the same layer.

In this mode, a plurality of transistors are further provided and electrically connected to a plurality of pixel portions respectively including the pixel electrodes, and the one first conductive film may be connected to one of the plurality of transistors along the first direction. A gate of one of the adjacent transistors is electrically connected, and the other first conductive film is electrically connected to a gate of the other transistor among the adjacent transistors.

In this form, one third conductive film electrically connected to one first conductive film is, for example, a wiring for supplying a switching signal for switching one transistor. Similarly, other third conductive films can supply switching signals to other transistors.

According to this aspect, for example, an inspection signal including information for determining whether or not a plurality of pixel portions are good can be output to an inspection circuit provided in a peripheral region through a transmission gate including a plurality of transistors.

In another aspect of the electro-optical device according to the present invention, it further includes a counter substrate arranged to face the substrate and passing through a sealing portion provided in a region outside the frame region defining the image display region in the peripheral region. , and the above-mentioned substrate are bonded to each other; the above-mentioned opposite substrate is equipped with an upper side light-shielding film formed in the above-mentioned frame area on the side opposite to the above-mentioned substrate surface, and the above-mentioned lower side light-shielding film may also be formed in the above-mentioned peripheral area. at least the aforementioned outer regions.

According to this aspect, it is possible to reduce return light mixed in the emitted light finally emitted from the image display area as display light for image display, and suppress the occurrence of stripe-like light and dark patterns reflected near the edge of the image display area. Therefore, it is possible to reduce display defects that are difficult to suppress only with the upper light-shielding film.

In order to solve the above-mentioned problems, the wiring board according to the present invention is characterized by comprising: a substrate; a plurality of conductive films formed in an island shape on the substrate; and a separation region that is a region between the plurality of conductive films and the conductive films. Among them, a region extending in the first direction; an insulating film covering the plurality of conductive films and the separation region; and a plurality of wirings formed on the insulating film so as to extend in the first direction, in accordance with the first The directions intersect each other; the separation regions extending in the first direction among the plurality of wirings and the regions between the wirings do not overlap with the separation regions of the plurality of conductive films extending in the first direction.

According to the wiring board according to the present invention, like the electro-optical device of the present invention described above, the generation and propagation of cracks can be reduced, for example, the occurrence of layers formed on the upper side of a plurality of conductive films being cut due to cracks can be reduced.

In order to solve the above-mentioned problems, electronic equipment according to the present invention includes the above-mentioned electro-optical device of the present invention.

According to the electronic equipment related to the present invention, since it is equipped with the electro-optic device according to the above-mentioned present invention, it is possible to realize a projection type display device, a mobile phone, an electronic notebook, a word processor, a viewfinder type or a display device capable of high-quality display. Monitor various electronic devices such as direct-view video tape recorders, workstations, TV telephones, POS terminals, and touch panels. In addition, as the electronic device according to the present invention, for example, an electrophoretic device such as electronic paper can also be realized.

These functions and other advantages of the present invention will be clarified through the embodiments described below.

Description of drawings

FIG. 1 is a plan view showing the overall structure of a liquid crystal device.

Fig. 2 is a cross-sectional view taken along line H-H' of Fig. 1 .

FIG. 3 is a circuit diagram showing a main circuit configuration of the TFT array substrate 10 .

FIG. 4 is a plan view of the first layer of the TFT array substrate 10 .

FIG. 5 is a plan view of the second layer of the TFT array substrate 10 .

FIG. 6 is a plan view of the third layer of the TFT array substrate 10 .

Fig. 7 is a sectional view taken along line VII-VII' of Figs. 4 to 6 .

Fig. 8 is a sectional view taken along line VIII-VIII' of Figs. 4 to 6 .

FIG. 9 is a diagram for comparing the relationship between the width of the regions separating the lower light-shielding films from each other and the cracks generated in the separation part.

FIG. 10 is a plan view showing a first layer portion of a TFT array substrate 10 in a modified example.

11 is a plan view showing a configuration of a projector as an example of electronic equipment using an electro-optical device.

FIG. 12 is a perspective view showing a configuration of a personal computer as an example of electronic equipment using an electro-optical device.

Fig. 13 is a perspective view showing the structure of a mobile phone as an example of electronic equipment using an electro-optical device.

Symbol Description

9a···pixel electrode, 10···TFT array substrate, 10a···image display area, 20···counter substrate, 21···counter electrode, 30···separation region, 70··· Pixel part, 90···power wiring, 101···X-drive circuit, 102··· external circuit connection terminal, 104···Y-drive circuit, 210···test enable circuit, 241a , 242a, 241c, 242c...lead-out wiring, T1, T2...test start wiring

Detailed ways

Embodiments of the electro-optical device, wiring board, and electronic equipment according to the present invention will be described below with reference to the drawings. In the present embodiment, a liquid crystal device 1 of a TFT active matrix driving method with a built-in driver circuit is taken as an example of an electro-optical device.

FIG. 1 is a plan view of a TFT array substrate and various structural devices formed thereon viewed from the opposite substrate side, and FIG. 2 is a cross-sectional view along H-H' of FIG. 1 .

In FIGS. 1 and 2 , the liquid crystal device 1 includes: a TFT array substrate 10 ; and a counter substrate 20 disposed so as to face the TFT array substrate 10 .

The counter substrate 20 is bonded to the TFT array substrate 10 via the sealing portion 52 provided in the peripheral region extending along the periphery of the image display region 10a. The liquid crystal layer 50 is sealed between the TFT array substrate 10 and the opposite substrate 20 . The counter substrate 20 is bonded to the TFT array substrate 10 via the sealing portion 52 disposed outside the frame region on the side facing the TFT array substrate 10 as described below.

The sealing part 52 is composed of such as ultraviolet curable resin, thermosetting resin, etc. used to paste the TFT array substrate 10 and the counter substrate 20. After it is coated on the TFT array substrate 10 in the manufacturing process, it is irradiated with ultraviolet rays, heated, etc. Let it solidify. In the sealing portion 52 , a gap material such as glass filaments or glass beads is dispersed for setting the gap (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value. That is, the liquid crystal device 1 is suitable for use as a light valve of a projector in a small size and for performing enlarged display. However, such a gap material may also be included in the liquid crystal layer 50 if the liquid crystal device 1 is a large liquid crystal device that performs equal-magnification display like a liquid crystal display or a liquid crystal television.

The counter substrate 20 is provided with a light-shielding frame light-shielding film 53 as an example of the "upper side light-shielding film" of the present invention in a frame region defining the image display region 10a. The frame light-shielding film 53 is formed in a frame region extending parallel to the inner side of the sealing region where the sealing portion 52 is arranged. However, part or all of such a frame light-shielding film may be provided on the TFT array substrate 10 side as a built-in light-shielding film.

The TFT array substrate 10 includes a lower light-shielding film 501 formed from the frame region to the outer region thereof. The lower light-shielding film 501 is partially formed outside the frame light-shielding film 53 from the outer periphery of the image display region 10a to the peripheral side. The lower side light-shielding film 501 is formed on the lower layer side of the following two types of wiring and power supply wiring in the frame area and the outer area. The wiring for supplying switching signals for turning on and off the TFT constituting the transmission gate, and the power supply wiring for driving various circuits included in the liquid crystal device 1 . The lower side light-shielding film 501 reduces reflected light reflected by various wirings and the like and transmitted light transmitted through gaps between these wirings in the peripheral area of the image display area 10 a. Accordingly, the amount of reflected light and transmitted light finally mixed in the outgoing light for display can be significantly reduced by the amount absorbed or reflected by the lower light shielding film 501 . Therefore, the liquid crystal device 1 can reduce the return light mixed in the outgoing light finally emitted from the image display area 10a as display light for image display, and can suppress the occurrence of stripe-like bright and dark patterns reflected near the edge of the image display area 10a. In other words, the liquid crystal device 1 can reduce display defects that are difficult to suppress only with the upper light-shielding film.

In the peripheral region outside the sealing region where the sealing portion 52 is arranged, in the region extending toward the periphery of the image display region 10a, the data line driving circuit 101 and the external circuit connection terminal 102 are arranged along one side of the TFT array substrate 10. , the scanning line driving circuit 104 is provided along two sides adjacent to the one side. Furthermore, a plurality of wirings 105 are arranged along the remaining side of the TFT array substrate 10, and the plurality of wirings 105 are used to connect the scanning line driving circuits 104 arranged on both sides of the image display area 10a. As shown in FIG. 1 , vertical conduction members 106 are arranged at the four corners of the opposing substrate 20 , and the vertical conduction members 106 function as vertical conduction terminals between the two substrates. On the other hand, on the TFT array substrate 10 , upper and lower conduction terminals are provided in regions facing these corners. Thereby, electrical conduction can be achieved between the TFT array substrate 10 and the counter substrate 20 .

The sampling circuit 110 for sampling the image signal supplied from the data line driving circuit 101 is arranged in the frame region formed by the frame light-shielding film 53 . That is, circuit elements such as TFTs constituting the sampling circuit 110 are arranged in the frame area. Furthermore, the wiring part from the data line wired in the image display area 10a to the sampling circuit 110, the wiring part from the data line driving circuit 101 to the sampling circuit 110, and the wiring part from the scanning line wired in the image display area 10a to Various wiring parts such as the wiring part of the scanning line driving circuit 104 are formed in the frame area or an area outside the frame area.

In FIG. 2 , on the TFT array substrate 10 , an alignment film is formed on the pixel electrodes 9 a formed with TFTs for pixel switching and wirings such as scanning lines and data lines. On the other hand, an alignment film is formed on the uppermost portion of the counter substrate 20 in addition to the counter electrode 21 . In addition, the liquid crystal layer 50 is composed of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

Also, on the TFT array substrate 10 shown in FIG. 1 and FIG. 2, in addition to these data line drive circuits 101, scan line drive circuits 104, and sampling circuits 110, etc., precharge circuits and inspection circuits, etc. can also be formed, The pre-charging circuit supplies pre-charging signals of predetermined voltage levels to the plurality of data lines respectively prior to image signals. The inspection circuit is used to inspect the quality and defects of the electro-optic device during the manufacturing process of the liquid crystal device 1 and when it leaves the factory.

Next, the main circuit configuration of the TFT array substrate 10 will be described with reference to FIG. 3 . FIG. 3 is a circuit diagram showing a main circuit configuration of the TFT array substrate 10 . In addition, the TFT array substrate 10 is one of the application examples of the wiring substrate according to the present invention. FIG. 3 is a circuit diagram upside down from the plan view shown in FIG. 1 .

In FIG. 3 , the liquid crystal device 1 is provided on a TFT array substrate 10 with a plurality of scanning lines Gj (j=1, 2, ..., n), a plurality of data lines Si (i = 1, 2, ... , m), Y-drive circuit 104, X-drive circuit 101, sampling circuit 110, a plurality of pixel units 70, test circuit 40, and power wiring 90 as an example of the "second conductive film" of the present invention.

The plurality of scanning lines Gj and the plurality of data lines Si are wired to cross each other in the image display region 10a.

The Y-drive circuit 104 sequentially supplies a switching signal to each scanning line at the time of inspection of the pixel portion 70 . Here, the so-called switching signal refers to a signal different from the image display scanning signal supplied to the pixel portion 70 when displaying an image, and is used to output the following inspection output signal from the pixel portion 70 to the pixel portion 70. The equipped TFT converts the signal into the ON state.

The X-drive circuit 101 supplies a sampling signal to the sampling switches 111 constituting the sampling circuit 110, and turns these sampling switches 111 into an on state. Here, the so-called "sampling signal" refers to a signal from X to supply a refresh signal to the data line Si through the image signal line 112 and a signal for determining whether or not a defect has occurred in the pixel portion when performing an inspection. - A signal supplied from the driving circuit 101 to the sampling circuit 110 .

The sampling circuit 110 is composed of a plurality of sampling switches 111 , and the sampling switches 111 are switched on and off in accordance with a sampling signal supplied from the X-drive circuit 101 .

The pixel portion 70 is provided with: a pixel electrode 9a shown in FIG. 2; a TFT that is switched on and off according to a switch signal supplied from the Y-drive circuit 104; The supplied image signal enables active matrix driving of a plurality of pixel units 70 .

The test circuit 40 includes: test start switches 241 and 242, a test start (hereinafter referred to as TE.) circuit 210, a pull-down circuit 35, lead-out wirings 241a and 242a as examples of the "first conductive film" of the present invention, and a test start wiring. T1 and T2 and PAD (pad) 60 .

In FIGS. 1 and 2 , the PAD 60 may be configured as one of the external circuit connection terminals 102 , or may be provided as a dedicated pad differently.

The test start switches 241 and 242 are provided on the substrate surface of the TFT array substrate in the peripheral region of the image display region 10a. The test enable switches 241 and 242 are provided corresponding to each of the two data lines constituting the data line group Grk, and are turned on in accordance with a test enable signal supplied from the test enable circuit 210 described later. By turning the test start switches 241 and 242 into the ON state, a signal to be inspected is output from each pixel portion 70 through one data line Si to be inspected below for each data line group Grk, and is output to the inspection via PAD60. Circuit 300 and memory 310.

The test enable circuit 210 is electrically connected to the gates of the test enable switches 241 and 242 through the test enable wirings T1 and T2, respectively. The test enable wirings T1 and T2 are electrically connected to respective gates of the test enable switches 241 and 242 . The test activation circuit 210 supplies a test activation signal to each of the test activation switches 241 and 242 via the test activation wirings T1 and T2 and the lead-out wirings 241 a and 242 a during inspection. Thereby, the test enable switches 241 and 242 are turned on and off, and the inspection signal output from each pixel unit 70 to be inspected is output to the inspection circuit 300 and the memory 310 through the lead wires 241b and 242b, the test wires TX and PAD60. Based on the inspection signal originally recorded in the memory 310 or the inspection signal directly supplied to the inspection circuit 300 through the memory 310 , the inspection circuit 300 determines whether or not a defect has occurred in the pixel portion 70 .

The power supply wiring 90 is partially routed around the peripheral area of the TFT array substrate 10 along the test activation wiring T1 and T2. The power wiring 90 supplies the driving power VDD to each circuit, and the driving power VDD is used to drive the TE circuit 210 , the X-driving circuit 101 , the Y-driving circuit 104 , and the circuits not shown formed on the TFT array substrate 10 .

The pull-down circuit 35 stabilizes the potentials of the test enable wirings T1 and T2 so that the test enable signals supplied to the test enable switches 241 and 242 via the test enable wirings T1 and T2 do not fluctuate.

In addition, the lower light-shielding film 501 is formed in the peripheral area of the image display area 10 a of the TFT array substrate 10 . More specifically, the region where the test circuit 40 is formed in the peripheral region of the image display region 10 a is also formed on the lower layer side of various elements such as switching elements and capacitors and wirings constituting the test circuit 40 .

Next, the inspection procedure of the pixel portion 70 will be described with reference to FIG. 3 . In addition, the inspection of the pixel portion 70 is preferably carried out in the previous stage of bonding the TFT array substrate 10 and the counter substrate 20 in the liquid crystal device 1 .

In FIG. 3 , when this inspection is performed, first, for example, an inspection signal is supplied to a storage capacitor included in the pixel unit 70 .

Next, the pixel switching TFT provided for each pixel portion 70 is turned off.

Next, refreshing is performed by supplying a refresh signal that makes the potential of the plurality of data lines Si 0V, that is, the potential is 0V. At this time, since the TFT for pixel switching is in an off state, the inspection signal supplied to the storage capacitor of the pixel portion 70 remains in its original state.

Next, since the test start switch 241 or 242 is turned on and off according to the test start signal supplied from the test start circuit 210 for each data line group Grk, one data line to be inspected among the two data lines is passed. Si, the inspection signal is output to the test wiring 80 . In the present embodiment, inspection signals output from each pixel unit 70 are sequentially output in the order of arrangement of the data lines Si for each data line group Grk. Thereby, an inspection signal is supplied to the inspection circuit 300 and the memory 310 through the test line TX, and whether or not each pixel unit 70 is defective is inspected.

The above inspection is performed for each scanning line Gj and each data line Si.

According to the liquid crystal device of this embodiment, it is possible to easily search for a defective pixel even in a liquid crystal device having a liquid crystal panel. Furthermore, since it is possible to determine the presence or absence of a defect in the pixel portion 70 at a relatively early stage in each manufacturing process, that is, whether the pixel portion is good, the yield of the liquid crystal device can be improved and the manufacturing cost can be reduced.

Next, the main content of the electro-optical device according to this embodiment will be described with reference to FIGS. 4 to 9 . 4 to 6 are plan views of the wiring structure of a region A in which the test circuit 40 is provided among the peripheral regions, and each unit is illustrated with thick solid lines and dotted lines. In addition, in FIGS. 4 to 6 , portions provided on the lower layer side of the TFT array substrate 10 in this order are shown in bold. More specifically, FIG. 4 shows the portion of the first layer of the TFT array substrate 10 with solid lines. 5 and 6 show the portions provided on the second layer and the third layer on the upper layer side in FIG. 4, respectively, in thick solid line diagrams. 7 is a sectional view taken along line VII-VII' of FIGS. 4 to 6 , and FIG. 8 is a sectional view taken along line VIII-VIII' of FIGS. 4 to 6 .

In FIGS. 4 to 6 , the TFT array substrate 10 includes a plurality of lower light-shielding films 501, isolation regions 30, insulating films 91 and 92, lead-out wirings 241a and 242a, power supply wiring 90, as the "third conductive film" of the present invention. The test activation wirings T1 and T2 which are examples of each, the test wiring TX, and the contact holes C1 , C2 and C3 which are examples of the "conductive part" of the present invention.

In FIG. 4 , the lower side light-shielding film 501 is formed in a rectangular island shape in plan view in the peripheral region extending along the periphery of the image display region 10a, and is formed along the direction in which the lead-out wirings 241a and 242a extend (the Y direction in the drawing). ) and a direction intersecting this direction (X direction in the drawing) are formed in a matrix.

In addition, although the shape of the lower side light-shielding film 501 is rectangular in design, it is the simplest, but it is not limited to a complete rectangle. It can also be any shape such as a shape close to a rectangle.

According to such a lower light-shielding film 501, compared with the case where a single light-shielding film is formed in the peripheral region, the stress applied to the upper and lower layers of the lower light-shielding film 501 can be relieved, and the occurrence and propagation of cracks described below can be reduced. In addition, if the area separated from each other by the plurality of lower light-shielding films 501 is set narrow in advance, it is possible to further reduce the image display area by extending in a grid pattern and separating the areas of the plurality of lower light-shielding films 501 from each other. The light leaked by 10a can maintain the picture quality of the displayed image and reduce the occurrence and propagation of cracks to the extent that it does not affect the displayed image.

The lower light-shielding film 501 is composed of one type of metal film or a plurality of types of metal films, and reduces stripe-like bright and dark patterns generated in a display image due to internally reflected light reflected by the frame light-shielding film 53 or the like. The lower light-shielding film 501 is formed of a light-shielding metal film such as aluminum or chromium, or is formed by laminating a plurality of these metal films. The lower light-shielding film 501 is formed directly on the TFT array substrate 10 or indirectly through a base insulating film or a multilayer structure constituting other circuits in the peripheral region extending along the periphery of the image display region 10a.

In FIG. 7 , the separation region 30 is provided along one side of the lower light-shielding film 501 (along the Y direction in the drawing) among the regions extending in a grid shape and separating a plurality of lower-side light-shielding films 501 from each other. ) extended separation region R2. The separation region 30 is obtained by curing a part of the insulating material constituting the insulation film 91 in the separation region R2 when the insulating film 91 covering the plurality of lower light-shielding films 501 is formed.

In FIG. 5, lead-out wirings 241a and 242a are formed on the insulating film 91 so as to extend in the Y direction, and are arranged in the X direction in plan view so that the separation region R1 separating them does not overlap with the separation region R2. . Therefore, it is possible to reduce the propagation of cracks generated in the separation region 30 through the insulating film 91 to the separation region R1 during the manufacture or operation of the liquid crystal device 1 . More specifically, it is possible to suppress the occurrence of overlapping with the lower side light-shielding film 501 made of a metal film such as aluminum or chromium and the lead-out wiring 241a and 242a films made of a semiconductor film that are weaker in mechanical strength. crack initiation and propagation. Thereby, damage to the multilayer structure formed on the upper side of the lower light-shielding film 501 due to crack propagation can be reduced. In addition, since the lead-out wirings 241a and 242a are arranged at a pitch corresponding to the pitch of the plurality of lower light-shielding films 501 along the X direction, it is also possible to reduce the force acting between the lead-out wirings 241a and 242a and the plurality of lower-side light-shielding films 501. stress.

The lead-out wirings 241a and 242a drawn from the gates of the test enable switches 241 and 242 are electrically connected to the respective test enable wirings T1 and T2 through the contact holes C1 and C2.

The lead-out wirings 241b and 242b extending from the respective drains of the test enable switch 241 and the TFT 242 are arranged along the X direction in the drawing. The lead wires 241b and 242b are electrically connected to the test wire TX through the contact hole C3, and output inspection signals to the test wire TX according to the respective ON and OFF of the test enable switches 241 and 242 . Thereby, the inspection signal output from each pixel unit 70 is output to an inspection circuit provided in the peripheral area of the image display area 10 a or outside the liquid crystal device 1 .

In FIG. 6 , test wiring TX, test activation wirings T1 and T2 , and power supply wiring 90 extend in the X direction.

In FIGS. 6 and 8 , although the power supply line 90 made of, for example, a metal film such as aluminum extends above the isolation region 30 , the isolation regions R1 and R2 do not overlap in plan. Therefore, it is possible to reduce the propagation of the crack generated in the separation region 30 to the power supply wiring 90 and cut off the power supply wiring 90 . Thereby, drive power can be supplied without failure to the TF circuit 210 , the Y-drive circuit 104 , and the X-drive circuit 101 that receive drive power through the power supply wiring 90 .

Next, a case where the arrangement relationship of the separation regions R1 and R2 in this embodiment is particularly useful in reducing crack propagation will be described. FIG. 9 is a diagram for comparing the relationship between the width of the regions separating the lower side light-shielding film from each other and the cracks generated in the separation region 30. Each of FIGS. 9(a) to (c) corresponds to the cross-section of FIG. 8 picture. In addition, please note that the relationship between the separation regions R2a, R2b, and R2c described below and the occurrence of cracks in the separation part is an example. Depending on the thickness of the film, the insulating material constituting the insulating film, and the curing conditions, the width of the separation region where cracks are likely to occur varies.

In FIG. 9( a ), when the width of the separation region R2 a is less than 1 μm, the insulating material uniformly enters the separation region, and the upper surface of the separation region 30 a becomes a flat surface. Therefore, a depression, which is one cause of crack generation, is not formed in the separation portion.

In FIG. 9( c ), when the width of the separation region R2c is greater than or equal to 6 μm, the upper surface of the separation region 30c becomes flat enough not to cause cracks, and cracks hardly occur in the separation region 30c.

In FIG. 9( b ), when the width of the separation region R2b is 3 μm or more and 5 μm or less, it is easy to produce a depression on the upper surface of the separation region 30 b experimentally or theoretically. Therefore, in this embodiment, when the width of the separation region R2 is greater than or equal to 3 μm and less than or equal to 5 μm, the occurrence and propagation of cracks can be effectively reduced.

As described above, according to the liquid crystal device 1 of the present embodiment, the generation and propagation of cracks can be reduced, and the power supply wiring 90 formed on the upper layer side of the test enable wirings T1 and T2 can be cut off due to the propagation of cracks, for example. Thereby, it is possible to reduce defects occurring during the manufacture or operation of the liquid crystal device 1 , and it is possible to improve yield and reliability.

(Modification)

Next, a modified example of the liquid crystal device 1 described above will be described with reference to FIG. 10 . According to the lead wiring provided in the liquid crystal device of this example, the generation of cracks in the region B1 shown in FIGS. 4 to 6 and the cracks propagating to the power supply wiring 90 through the regions B1 and B2 can be further effectively reduced. In addition, in the following description, the same reference numerals will be attached to the common parts as those of the liquid crystal device 1, and the detailed description thereof will be omitted for convenience. FIG. 10 is a plan view showing a portion of the first layer of the TFT array substrate 10 corresponding to FIG. 4 .

In FIG. 10, since the separation region R1a and the separation region R2 that separate the lead wirings 241c and 242c from each other do not overlap, the propagation of cracks generated in the separation region 30 can be reduced similarly to the liquid crystal device 1 described above.

In addition, the planar shapes of the lead-out wirings 241c and 242c electrically connected to the gates of the test enable switches 241 and 242 are symmetrical in the X direction about the respective center lines CL1 and CL2 of the separation region R2 of the lower light-shielding film 501. shape.

According to the lead wires 241c and 242c, when the lead wires 241c and 242c are formed on the insulating film 91 by, for example, a thin film forming method such as vapor deposition or sputtering, the stress acting on the insulating film 91 by these wires can be reduced, and indirectly The stress acting on the separation region 30 is reduced. Therefore, cracks generated in the separation region 30 can be reduced, and it is possible to effectively prevent cracks from easily propagating due to stress acting on the lower layer side of the lead-out wirings 241c and 242c. More specifically, it is possible to reduce the propagation of cracks to the power supply wiring 90 through the regions B1 and B2 shown in FIGS. 4 to 6 .

The lead wirings 241c and 242c are formed such that their lengths are different from each other along the Y direction in the drawing. The lead-out wirings 241c and 242c are electrically connected to each of the test activation wirings T1 and T2 arranged in a shifted manner along the Y direction in the drawing through each of the contact holes C1a and C2a. Therefore, according to the lead-out wirings 241c and 242c, it is possible to form each of the lead-out wirings 241c and 242c on the separation region R2, and to connect the lead-out wirings 241c and 242c to each of the test enable wirings T1 and T2 formed on the same layer. electrical connection. Thereby, the lead-out wirings 241c and 242c can be electrically connected to the test activation wirings T1 and T2 without making the multilayer structure formed on the TFT array substrate 10 into a complicated layered structure.

<electronic device>

Next, a case where the above-mentioned liquid crystal device is used in various electronic devices will be described with reference to FIGS. 11 to 13 .

First, a projector using the liquid crystal device as a light valve will be described. Fig. 11 is a plan view showing a configuration example of a projector. As shown in FIG. 11, inside the projector 1100, a lamp unit 1102 composed of a white light source such as a halogen lamp is provided. The projected light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four reflectors 1106 and two dichroic mirrors 1108 arranged in the light guide device 1104, and enters the light valve corresponding to each primary color as a light valve. Liquid crystal panels 1110R, 1110B and 1110G.

The liquid crystal panels 1110R, 1110B, and 1110G have the same structure as the above-mentioned liquid crystal device, and are respectively driven according to R, G, and B primary color signals supplied from the image signal processing circuit. Then, the light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In this dichroic prism 1112, R and B light beams are bent at 90 degrees, while G light beams travel straight. Therefore, as a result of synthesizing the images of the respective colors, a color image is projected onto a screen or the like through the projection lens 1114 .

Here, note that from the display images obtained by the liquid crystal panels 1110R, 1110B, and 1110G, the display image obtained by the liquid crystal panel 1110G needs to be reversed left and right relative to the display images obtained by the liquid crystal panels 1110R and 1110B.

In addition, in liquid crystal panels 1110R, 1110B, and 1110G, since light corresponding to the respective primary colors of R, G, and B enters through dichroic mirror 1108 , no color filters are required.

Next, an example in which a liquid crystal device is used in a portable personal computer will be described. Fig. 12 is a perspective view showing the configuration of the personal computer. In FIG. 12 , a computer 1200 is composed of a main body 1204 including a keyboard 1202 and a liquid crystal display unit 1206 . The liquid crystal display assembly 1206 is formed by adding a backlight to the back of the above-mentioned liquid crystal device 15 .

Next, an example in which a liquid crystal device is used in a mobile phone will be described. Fig. 13 is a perspective view showing the structure of the mobile phone. In FIG. 13 , a mobile phone 1300 includes a plurality of operation buttons 1302 and a reflective liquid crystal device 15 . In this reflective liquid crystal device, a front light source is provided in front of it as needed.

In addition, in addition to the electronic equipment described with reference to Figures 11 to 13, liquid crystal televisions, viewfinder and monitoring direct-view video tape recorders, car navigation devices, pagers, electronic notepads, desktop electronic calculators, etc. , word processors, workstations, TV telephones, POS terminals and devices with touch panels, etc. Also, it goes without saying that it can be used for these various electronic devices.

The present invention is not limited to the above-mentioned embodiments, and can be appropriately changed within the scope of not violating the gist or concept of the invention that can be understood from the technical solution and the specification as a whole, and the electro-optical device and electronic equipment equipped with the electro-optical device accompanied by such changes It is also included in the technical scope of the present invention.

Claims (9)

1. an electro-optical device is characterized by,

Possess:

Substrate;

A plurality of pixels, it is formed at the image display area on the aforesaid substrate;

A plurality of downside photomasks, it forms island in the neighboring area that is positioned at above-mentioned image display area periphery;

Separated region, it is the zone by the extension of the 1st direction among above-mentioned a plurality of downside photomasks zone each other;

Dielectric film, it covers above-mentioned a plurality of downside photomask and above-mentioned separated region; And

A plurality of the 1st conducting films, it forms respectively by above-mentioned the 1st direction and extends on above-mentioned dielectric film, presses the direction of intersecting with above-mentioned the 1st direction and arranges;

The separated region of above-mentioned the 1st conducting film of pressing above-mentioned the 1st direction extension among above-mentioned a plurality of the 1st conducting films zone each other, the separated region that extends by the 1st direction of the above-mentioned a plurality of downside photomasks of getting along well overlaps.

2. electro-optical device according to claim 1 is characterized by:

Above-mentioned downside photomask is the formed downside photomask of circuit downside that is provided with in above-mentioned neighboring area,

Also possess the 2nd conducting film, the 2nd conducting film is formed at the upper layer side of above-mentioned a plurality of the 1st conducting films, and partially overlaps at least in the separated region by the extension of the 1st direction of above-mentioned downside photomask, presses the direction that intersects with above-mentioned the 1st direction and extends.

3. electro-optical device according to claim 1 is characterized by:

Above-mentioned a plurality of downside photomask is arranged in rectangular in above-mentioned neighboring area,

Above-mentioned a plurality of the 1st conducting film is on the direction that intersects with above-mentioned the 1st direction, by arranging at interval with the interval of above-mentioned a plurality of downside photomasks is corresponding.

4. electro-optical device according to claim 1 is characterized by:

The flat shape of above-mentioned the 1st conducting film is to be the symmetric shape at center on the direction that intersects with above-mentioned the 1st direction, with the separated region that extends by the 1st direction of above-mentioned downside photomask.

5. electro-optical device according to claim 1 is characterized by:

Also possess a plurality of the 3rd conducting films, the 3rd conducting film is formed at different with above-mentioned a plurality of the 1st conducting films layers, and extends along the direction that intersects with above-mentioned the 1st direction, and arranges on above-mentioned the 1st direction;

Mutual adjacent one the 1st conducting film and other the 1st conducting film among above-mentioned a plurality of the 1st conducting film, they are different mutually in the length of above-mentioned the 1st direction,

Above-mentioned one the 1st conducting film is electrically connected by conductive part extending by the direction that intersects with the real estate of aforesaid substrate and one the 3rd conducting film among above-mentioned a plurality of the 3rd conducting film,

Above-mentioned other the 1st conducting film is electrically connected by other conductive part of extending by the direction that intersects with the aforesaid substrate face and other the 3rd conducting film among above-mentioned a plurality of the 3rd conducting film.

6. electro-optical device according to claim 5 is characterized by:

Above-mentioned a plurality of pixel also possesses pixel electrode and transistor respectively, and this transistor AND gate pixel electrodes is electrically connected,

Above-mentioned one the 1st conducting film is electrically connected with among above-mentioned a plurality of transistors, among the mutual adjacent transistors of above-mentioned the 1st direction, transistorized grid,

Above-mentioned other the 1st conducting film is electrically connected with other transistorized grid among the above-mentioned mutual adjacent transistors.

7. electro-optical device according to claim 1 is characterized by:

Also possess the subtend substrate, it is configured to and the aforesaid substrate subtend, and the sealing and the aforesaid substrate of the exterior lateral area by being arranged at frame region among the above-mentioned neighboring area, the above-mentioned image display area of regulation are bonding mutually,

Above-mentioned subtend substrate with aforesaid substrate in the face of to subtend face side, have the upper light shielding that is formed at above-mentioned frame region,

Above-mentioned downside photomask is formed at the above-mentioned at least exterior lateral area among the above-mentioned neighboring area.

8. a circuit board is characterized by,

Possess:

Substrate;

A plurality of conducting films, it forms island on aforesaid substrate;

Separated region, it is the zone by the extension of the 1st direction among above-mentioned a plurality of conducting film zone each other;

Dielectric film, it covers above-mentioned a plurality of conducting film and above-mentioned separated region; And

Many wirings, it forms respectively on above-mentioned dielectric film by above-mentioned the 1st direction and extends, and presses the direction of intersecting with above-mentioned the 1st direction and arranges;

The separated region of the above-mentioned wiring of pressing above-mentioned the 1st direction extension among above-mentioned many wirings zone each other, the separated region that extends by the 1st direction of the above-mentioned a plurality of conducting films of getting along well overlaps.

9. electronic equipment is characterized by:

Possesses each described electro-optical device in the claim 1 to 7.

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