CN100449692C - Silicon extension of re-doped arsenic substrate - Google Patents
Silicon extension of re-doped arsenic substrate Download PDFInfo
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- CN100449692C CN100449692C CNB2007100616850A CN200710061685A CN100449692C CN 100449692 C CN100449692 C CN 100449692C CN B2007100616850 A CNB2007100616850 A CN B2007100616850A CN 200710061685 A CN200710061685 A CN 200710061685A CN 100449692 C CN100449692 C CN 100449692C
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- epitaxial loayer
- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 17
- 239000010703 silicon Substances 0.000 title claims abstract description 17
- 229910052785 arsenic Inorganic materials 0.000 title claims abstract description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000011010 flushing procedure Methods 0.000 claims abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 17
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 17
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 17
- 238000000407 epitaxy Methods 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 206010016825 Flushing Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
The invention is concerned with the manufacture method of the silicon epitaxial slice that is the silicon extension method of remixing arsenic substrate. It is based on the ordinary method, adds the HCI into the flushing H2 when the second time flushing by H2, in order to control autodoping. The smoothness of the resistivity rate and the cragginess of the transition region are all good.
Description
Technical field
The present invention relates to a kind of method of making silicon epitaxial wafer, refer in particular to and a kind ofly utilize that hydrogen chloride is counter throws the method that technology is made heavily doped arsenic substrate silicon epitaxial wafer.
Background technology
Present heavily doped arsenic (As) substrate silicon epitaxy technology is used more and more widely in the manufacturing of electronic device, and its range of application relates to aspects such as Schottky diode, triode, VDMOS, variable capacitance diode, automotive electronics, IGBT.Electronic devices and components producer all needs the consistency of heavily doped As substrate silicon epitaxial wafer and the transition region of epitaxial loayer are carried out strictness control in order to improve die yield.
In chemical vapor deposition processes, inevitably have impurity in the transition region of epitaxial wafer and occur, the precipitous degree of Impurity Distribution in the transition region can influence the quality and the electrical quantity of epitaxial wafer.It is very difficult making the interior precipitous thin epitaxy layer device of impurity concentration gradient of transition region, and the method for making the precipitous transition region of Impurity Distribution gradient is constantly pursued by each producer.In the actual process production process, not only will be according to the designing requirement of electric elements, accurately control is because the influence to the epitaxial loayer electrical quantity is stain in the system that the calandria of heating furnace etc. cause, but also to manage to reduce autodoping in the epitaxial deposition process, promptly reduce the impurity content of transition region, control profile of impurities gradient.
At present, the silicon epitaxy process of ripe heavily doped As substrate is the technology that is called as " two step epitaxys "." two step epitaxy " grow earlier one deck intrinsic epitaxial loayer on heavily doped arsenic substrate, the hydrogen that feeds big flow then in stove is caught up with gas, catch up with the epitaxial loayer of regrowth remainder behind the gas, up to meeting the requirements of thickness.Its basic step is as follows:
1 with the substrate shove charge, be warming up to 1000～1200 ℃, feed the hydrogen chloride polishing then
This step is at high temperature to use the hydrogen-chloride etching substrate, and substrate is played polishing action, and is of value to the improvement of the lattice structure of the epitaxial loayer that is about to growth.
The big flow hydrogen flushing of 2 usefulness
In heating furnace, feed big flow hydrogen, thereby substrate and bell jar are washed, catch up with gas, the impurity that is adsorbed on wafer, base-plates surface and is trapped in the boundary-layer is taken away by primary air.
3 growth one deck intrinsic epitaxial loayers
Utilize the chemical vapour deposition technique intrinsic epitaxial loayer of on substrate, growing.The intrinsic epitaxial loayer plays sealing process to wafer surface, stops the further outwards volatilization of impurity in the substrate.The thickness of general intrinsic epitaxial loayer can be determined according to the requirement of epilayer resistance rate.
4 for the second time big flow hydrogen flushings
In stove, feed the hydrogen of big flow once more, the intrinsic epitaxial loayer on bell jar, pedestal, substrate and the substrate is washed, catches up with gas, the impurity that is adsorbed on bell jar, base-plates surface and is trapped in the epitaxial loayer boundary-layer is further taken away by primary air.
5 carry out the growth of second stage, reach requirement up to the thickness of epitaxial loayer.
The shortcoming and the deficiency of above-mentioned " two step epitaxys " technology are:
At first, in the step 1, though the corrosion of the HCl under the high temperature can be polished substrate, and it is useful to improving lattice defect, but it also will produce some accessory substances when also having weak point: HCl polishing, and the surface of substrate is peeled a layer from when at high temperature polishing, even so pass through the flushing of the big flow hydrogen of step 2, impurity in these accessory substances and the substrate also can some enter in the atmosphere of vapour deposition, is the impurity content of transition zone thereby influence ground floor intrinsic epitaxial loayer.
Next, the risk that occurs the high resistance interlayer in the intrinsic epitaxial loayer of first step growth is bigger.Although the As dopant in first step growth in the heavily doped As substrate can spread outward to the intrinsic epitaxial loayer, and make the intrinsic epitaxial loayer mix impurity, but because in edges of substrate and centre, impurity is to the amount difference of outdiffusion, therefore be difficult to control, thereby very likely make the intrinsic epitaxial loayer resistive formation occur,, and can not stop substrate impurity fully perhaps because the intrinsic epitaxial loayer of first step growth is too thin.
In addition, record by test, the resistivity evenness of the epitaxial loayer that above-mentioned technology obtains preferably also can only reach 4%, can't further improve again; And high resistant thin-film epitaxy uniformity and transition region all are difficult to control.
The 4th, above-mentioned " two step epitaxy " technology is for preventing that vertical autodoping is effective, for preventing on the interface then DeGrain of laterally autodoping.
Summary of the invention
The technical issues that need to address of the present invention provide a kind of process of grown silicon extension, thereby the resistance that is expanded is smooth, transition region is precipitous, the more uniform epitaxial loayer of resistivity.
Method of the present invention is that method of the present invention mainly comprises the steps: based on existing " two step epitaxys " technology
A with the silicon substrate shove charge, be warmed up to 1000～1200 ℃, polish with hydrogen chloride then;
B washes with big flow hydrogen;
C utilizes chemical gaseous phase depositing process growth one deck intrinsic epitaxial loayer;
D washes with big flow hydrogen once more, and adds hydrogen chloride in hydrogen;
E carries out the growth of second stage, reaches requirement up to the thickness of epitaxial loayer.
The ratio that feeds hydrogen chloride and hydrogen among the above-mentioned steps D is 1/50 to 1/100.
The technological progress that the present invention obtains is:
At first, the secondary HCl in-situ corrosion technology that the present invention takes i.e. " the anti-technology of throwing of HCl ", and it can inhibition of self-doped, makes the uniform resistivity of the silicon epitaxy layer of regrowth subsequently, and transition region is smooth.
Secondly, when feeding HCl once more in step D, the intrinsic epitaxial loayer that an energy jettisoning part has just been grown reduces the impurity content of ground floor intrinsic epitaxial loayer, makes the transition region of epitaxial wafer precipitous, has also reduced the possibility that forms the high resistant interlayer simultaneously.
The 3rd is because the back side " suction silicon " effect has reduced the volatilization of back side substrate impurity, thereby reduced autodoping.
The 4th HCl intrinsic epitaxial loayer that a jettisoning part is grown for the first time before the epitaxial growth second time makes near near layer of the formation of surface of silicon one impurity consumption, so when carrying out epitaxial growth once more, impurity overflows the speed reduction, so can reduce autodoping.
Description of drawings
Fig. 1 is the vertical distributed expansion resistance view of silicon epitaxial wafer that method of the present invention obtains.
Fig. 2 is the spreading resistance figure that vertically distributes with the epitaxial loayer that conventional two steps epitaxy growth obtains.
Embodiment
Below in conjunction with concrete experimental result the present invention is described in further details:
In the present embodiment, used conventional " two step epitaxys " and method of the present invention to test respectively, and test data has been contrasted.
The extension parameter of the epitaxial loayer of present embodiment is: epilayer resistance rate 0.70-0.78 Ω cm, epitaxy layer thickness is 4.9-5.2um.
The epitaxial device that present embodiment adopted is: the PE2061 epitaxial furnace of Italian LPE SPA, every stove can be adorned 30 of four inches silicon chips.
Concrete processing step is in the present embodiment: shove charge--be warmed up to 1000～1200 ℃--in stove, feeding the HCl polishing--with the H of big flow
2Flushing--growth one deck intrinsic epitaxial loayer, thickness is about 1.5um--and uses big flow H once more
2Flushing feeds simultaneously and accounts for H
2The HCl--of feeding amount 1% carries out the growth of second stage, reaches requirement up to the thickness of epitaxial loayer.
Table 1 is the technical conditions that the substrate in the embodiments of the invention will meet;
Table 2 is to use method of the present invention--the resistivity data of " the anti-technology of throwing of HCl " gained;
Table 3 is with conventional " two step epitaxys " resulting resistivity data of technology.
Table 1
| Parameter | Unit | Normal value |
| Dopant | As | |
| Resistivity | Ω·CM | 0.002-0.004 |
| Resistivity gradient position | ％ | 25.0 |
| The crystal orientation | 1-1-1 | |
| The crystal orientation irrelevance | 4.0±0.5° | |
| Thickness and tolerance | um | 525.0±20.0 |
| Diameter and tolerance | mm | 100.0±0.20 |
Table 2
| The position | On | In | Down | A left side | Right | On average | Maximum | Minimum | Uniformity |
| Ground floor | 0.722 | 0.742 | 0.742 | 0.715 | 0.738 | 0.73 | 0.74 | 0.72 | 1.85 |
| The second layer | 0.703 | 0.739 | 0.741 | 0.712 | 0.728 | 0.72 | 0.74 | 0.70 | 2.63 |
| The 3rd layer | 0.718 | 0.72 | 0.741 | 0.712 | 0.739 | 0.73 | 0.74 | 0.71 | 2.00 |
| 0.73 | 0.74 | 0.70 | 2.70 |
Table 3
| The position | On | In | Down | A left side | Right | On average | Maximum | Minimum | Uniformity |
| Ground floor | 0.746 | 0.769 | 0.749 | 0.732 | 0.733 | 0.75 | 0.77 | 0.73 | 2.47 |
| The second layer | 0.708 | 0.742 | 0.744 | 0.743 | 0.731 | 0.73 | 0.74 | 0.71 | 2.48 |
| The 3rd layer | 0.703 | 0.744 | 0.732 | 0.734 | 0.731 | 0.73 | 0.74 | 0.70 | 2.83 |
| 0.74 | 0.77 | 0.70 | 4.48 |
Unit is Ω CM in table 2, the table 3; Parameter uniformity computing formula in the table is:
[(maximum-minimum value)/(maximum+minimum value)] * 100%.
" upper, middle and lower, left and right " in the table 2,3 are meant the position of measured resistivity.
By the measurement of table 2 and table 3, calculate gained data as can be seen: the uniformity of resistivity is far superior to the data in the table 3 in the table 2.
Fig. 1 and Fig. 2 curve at the middle and upper levels is the resistivity curve of epitaxial loayer, and following curve is the resistivity of substrate, and the part that tilts between two curves is the resistivity curve of transition zone up and down.Comparison diagram 1 and Fig. 2 as can be known, the resistivity curve of whole epitaxial loayer smooth than Fig. 2 among Fig. 1, and transition region is more precipitous than Fig. 2.
Claims (1)
1, a kind of silicon epitaxy method of heavily doped arsenic substrate, it may further comprise the steps: A, polish with hydrogen chloride with the silicon substrate shove charge, after being warmed up to 1000～1200 ℃, B, in stove, feed big flow hydrogen, C, with chemical vapour deposition technique growth one deck intrinsic epitaxial loayer, D, feed the mist flushing of big flow hydrogen and hydrogen chloride once more, E, carry out the growth of second stage, thickness up to epitaxial loayer reaches requirement, it is characterized in that: the ratio of hydrogen chloride and hydrogen is among the step D: 1/50 to 1/100.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100616850A CN100449692C (en) | 2007-04-11 | 2007-04-11 | Silicon extension of re-doped arsenic substrate |
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| CNB2007100616850A CN100449692C (en) | 2007-04-11 | 2007-04-11 | Silicon extension of re-doped arsenic substrate |
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| CN100449692C true CN100449692C (en) | 2009-01-07 |
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| CN101335236B (en) * | 2007-12-28 | 2011-07-06 | 上海新傲科技股份有限公司 | BICMOS circuit buried layer epitaxial method by cylinder epitaxial furnace |
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| CN102386067B (en) * | 2010-08-31 | 2013-12-18 | 中国科学院上海微系统与信息技术研究所 | Epitaxial growth method for effectively restraining self-doping effect |
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| CN103489761A (en) * | 2013-09-17 | 2014-01-01 | 杭州立昂微电子股份有限公司 | Growing method of special epitaxial slice for Schottky chip |
| CN103996608B (en) * | 2014-06-06 | 2016-07-06 | 上海先进半导体制造股份有限公司 | The method improving epilayer resistance rate uniformity |
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| CN106910676A (en) * | 2017-03-30 | 2017-06-30 | 河北普兴电子科技股份有限公司 | The growing method of intrinsic layer on P+ substrates |
| CN111415864A (en) * | 2020-03-18 | 2020-07-14 | 上海晶盟硅材料有限公司 | Super-heavy red phosphorus doped substrate epitaxy method |
| CN111489964B (en) * | 2020-04-27 | 2022-05-10 | 中国电子科技集团公司第四十六研究所 | Preparation method of thick-layer silicon epitaxial wafer for reducing pattern drift rate |
| CN119351997A (en) * | 2024-10-24 | 2025-01-24 | 西安奕斯伟材料科技股份有限公司 | Epitaxial growth method and epitaxial wafer |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4661199A (en) * | 1985-11-12 | 1987-04-28 | Rca Corporation | Method to inhibit autodoping in epitaxial layers from heavily doped substrates in CVD processing |
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