CN100444347C - Washing and drying unit for bonding - Google Patents
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- CN100444347C CN100444347C CNB2006100120437A CN200610012043A CN100444347C CN 100444347 C CN100444347 C CN 100444347C CN B2006100120437 A CNB2006100120437 A CN B2006100120437A CN 200610012043 A CN200610012043 A CN 200610012043A CN 100444347 C CN100444347 C CN 100444347C
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- 238000001035 drying Methods 0.000 title claims abstract description 26
- 238000005406 washing Methods 0.000 title 1
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- 238000003780 insertion Methods 0.000 claims abstract description 11
- 230000037431 insertion Effects 0.000 claims abstract description 11
- 239000002585 base Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
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- 238000000034 method Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
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- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
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Abstract
一种用于键合的清洗和干燥装置,包括:一圆形底座,其下部为一圆盘,圆盘上有一凸柱,整体截面的形状为倒T形;一装样容器,包括上下两部分,下部为中空的圆柱体,其中间空出部分为圆柱形可套在底座的凸柱上;上部为方形体,其中间为带有二级台阶的中空部;在其相对的两侧壁上开有两个孔;该装样容器外壁的中间凸出有一圆形凸边;两根两端带螺纹的螺杆,下端接于底座,上端穿过一根横梁,用螺帽接于螺杆的上端;两个插片,插在方形体的侧壁上开的孔内;一卡带为一环形体,其侧壁上打有多数的小孔;当插片插入装样容器上的孔时,卡带套置在插片处,以固定插片。
A cleaning and drying device for bonding, comprising: a circular base, the lower part of which is a disk, on which there is a convex column, the shape of the overall section is inverted T; a sample loading container, including two upper and lower The lower part is a hollow cylinder, and the middle part is cylindrical and can be set on the convex post of the base; the upper part is a square body, and the middle part is a hollow part with two steps; There are two holes on the top; a circular convex edge protrudes from the middle of the outer wall of the sample container; two screw rods with threads at both ends, the lower end is connected to the base, the upper end passes through a beam, and is connected to the screw rod with a nut The upper end; two inserts, inserted into the holes on the side wall of the square body; one cassette is a ring, with many small holes punched on the side wall; when the inserts are inserted into the holes on the sample container, The cassette is sleeved at the insertion piece to fix the insertion piece.
Description
技术领域 technical field
本发明属于半导体技术领域,特别是指一种用于键合的清洗和干燥装置。The invention belongs to the technical field of semiconductors, in particular to a cleaning and drying device for bonding.
背景技术 Background technique
对于半导体器件而言,优化参数和结构使器件达到最佳性能是人们追求的目标。器件的优化设计需要用到多种材料,只有综合它们各自的良好特性才能做出性能最佳的器件。对于晶格匹配的各种材料,可以在合适的衬底上通过外延生长的方式长出符合要求的器件结构。但对于晶格失配的材料,外延生长比较困难,并可能引入较多的缺陷和位错,从而给器件的电学及光学性质带来严重的不利影响。键合工艺可以很好的克服晶格失配给器件设计及材料生长带来的困难For semiconductor devices, optimizing the parameters and structure to achieve the best performance of the device is the goal pursued by people. The optimal design of the device requires the use of a variety of materials, and only by combining their respective good characteristics can the device with the best performance be made. For various lattice-matched materials, a suitable device structure can be grown on a suitable substrate by means of epitaxial growth. However, for lattice-mismatched materials, epitaxial growth is more difficult, and more defects and dislocations may be introduced, which will have a serious adverse effect on the electrical and optical properties of the device. The bonding process can well overcome the difficulties brought by lattice mismatch to device design and material growth
所谓键合就是将两块同质或异质的晶片用物理或化学的方法使之相互成键贴合。通常可称之为直接键合(direct bonding)、熔融键合(fusionbonding)、原子重排键合(bonding by atomic rearrangement)或扩散键合(diffusion bonding)。由于键合不需要任何粘贴剂,晶片的电阻率和导电类型可以自由选择,而且不受材料晶格与晶向限制,键合结构可以承受减薄、抛光、化学腐蚀和高温处理等各种传统工艺,因而引起了研究人员的极大兴趣。自1986年IBM公司的Lasky[文献1,Lasky J.B.,wafer bonding for silicon insulator technologies.Appl.Phys.Lett.48,78-80(1986)]和日本东芝公司的Shimbo[文献2,ShimboM.,Furukawa K,Fukuda K.et al.Silicon-to-silicon direct bondingmethod.J.Appl.Phys.60(8),2987-2989(1986).]将Si片高温处理获得具有高结合强度的键合Si结构之后,键合技术得到了极大的发展,迄今为止已有数百篇晶片键合的文章和专利发表,键合工艺在新材料、新结构的研究制备,微电子电路,微机械加工,光电器件制备和光集成方面被广泛的应用,键合技术本身也发展出了共晶键合(eutectic bonding),介质键合(adhesive bonding),倒装键合(flip-chip bonding),非平面键合(nonplanar bonding)等多种形式,直接键合技术也渐渐趋向于低温直接键合。The so-called bonding is to use physical or chemical methods to bond two homogeneous or heterogeneous wafers to each other. It can usually be called direct bonding, fusion bonding, bonding by atomic rearrangement or diffusion bonding. Since bonding does not require any paste, the resistivity and conductivity type of the wafer can be freely selected, and it is not limited by the material lattice and crystal orientation. The bonding structure can withstand various traditional methods such as thinning, polishing, chemical corrosion and high temperature treatment. technology, which has aroused great interest of researchers. Since 1986, IBM's Lasky [Document 1, Lasky J.B., wafer bonding for silicon insulator technologies.Appl.Phys.Lett.48, 78-80 (1986)] and Japan's Toshiba Corporation's Shimbo [Document 2, ShimboM., Furukawa K, Fukuda K.et al.Silicon-to-silicon direct bondingmethod.J.Appl.Phys.60(8), 2987-2989(1986).] Treating Si sheets at high temperature to obtain a bonded Si structure with high bonding strength After that, bonding technology has been greatly developed. So far, hundreds of articles and patents on wafer bonding have been published. Device fabrication and optical integration are widely used, and the bonding technology itself has developed eutectic bonding, adhesive bonding, flip-chip bonding, and non-planar bonding. (nonplanar bonding) and other forms, direct bonding technology is also gradually tending to direct bonding at low temperature.
一般键合工艺可分为表面清洗、旋转干燥及退火三个步骤,其中表面清洗和旋转干燥步骤对键合的成败起着至关重要的作用,尤其对低温直接键合影响巨大。键合工艺要求原子级平滑洁净的表面,晶片表面粗糙度需要在纳米级别,而表面吸附的微米量级颗粒也会在键合界面留下毫米量级的空洞,严格的表面要求给键合工艺带来了困难。在清洗时需要避免灰尘或颗粒的引入,要求表面裸露于空气中的时间尽可能短。尽量减少镊子的夹持或转移操作,以避免镊子可能引入的金属离子和可能对表面造成的损伤。同时还要避免晶片在清洗时彼此碰撞或接触而带来损伤。The general bonding process can be divided into three steps: surface cleaning, spin drying and annealing. The surface cleaning and spin drying steps play a crucial role in the success or failure of bonding, especially for low temperature direct bonding. The bonding process requires a smooth and clean surface at the atomic level. The surface roughness of the wafer needs to be at the nanometer level, and the micron-scale particles adsorbed on the surface will also leave millimeter-scale cavities on the bonding interface. The strict surface requirements give the bonding process posed difficulties. It is necessary to avoid the introduction of dust or particles during cleaning, and the time that the surface is exposed to the air is required to be as short as possible. Minimize clamping or transfer operations with tweezers to avoid possible introduction of metal ions by the tweezers and possible damage to the surface. At the same time, it is also necessary to avoid damage to the wafers caused by collision or contact with each other during cleaning.
发明内容 Contents of the invention
因而本发明的目的在于,提供一个用于键合的清洗和干燥装置,以避免可能的污染和损伤,并负责方便的将干燥后的晶片对贴合后放入退火炉中。Therefore the object of the present invention is to provide a cleaning and drying device for bonding, to avoid possible contamination and damage, and to put the dried wafers into an annealing furnace after being bonded conveniently.
本发明一种用于键合的清洗和干燥装置,其特征在于,包括以下几个部分:A cleaning and drying device for bonding of the present invention is characterized in that it comprises the following parts:
一圆形底座,该圆形底座的下部为一圆盘,圆盘的上面中间有一凸柱,整体截面的形状为倒T形;A circular base, the lower part of the circular base is a disk, and there is a convex column in the middle of the upper surface of the disk, and the shape of the overall cross-section is an inverted T shape;
一装样容器,包括上下两部分,下部为中空的圆柱体,其中间空出部分为圆柱形可套在底座的凸柱上;上部为方形体,该方形体内为带有二级台阶的中空部;在方形体相对的两侧壁上开有两个孔;该装样容器外壁的中间凸出有一圆形凸边;A sample container, including upper and lower parts, the lower part is a hollow cylinder, and the middle vacant part is cylindrical and can be set on the convex post of the base; the upper part is a square body, and the square body is a hollow cylinder with two steps. There are two holes on the opposite side walls of the square body; a circular convex edge protrudes from the middle of the outer wall of the sample container;
两根两端带螺纹的螺杆,下端接于底座,上端穿过一根横梁,用螺帽接于螺杆的上端;Two screw rods with threads at both ends, the lower end is connected to the base, the upper end passes through a beam, and the upper end of the screw rod is connected with a nut;
两个插片,可插在装样容器上部方形体的侧壁上开的孔内;Two inserts, which can be inserted into the holes on the side wall of the upper square body of the sample loading container;
一卡带,该卡带为一环形体,该卡带的侧壁上打有多数的小孔;A cassette, the cassette is an annular body, and a plurality of small holes are punched on the side wall of the cassette;
当插片插入装样容器上的孔时,卡带套置在装样容器的上部方形体上的插片处,以固定插片。When the insertion piece is inserted into the hole on the sample loading container, the cassette is sleeved on the insertion piece on the upper square body of the sample loading container to fix the insertion piece.
其中该装置的材料采用不惧酸碱腐蚀的聚四氟材料,可承受250℃以内的溶液和干燥温度。Among them, the material of the device is made of PTFE material that is not afraid of acid and alkali corrosion, and can withstand the solution and drying temperature within 250 °C.
其中所述的装样容器的上部为圆柱体。Wherein the upper part of the sample loading container is a cylinder.
附图说明 Description of drawings
为进一步说明本发明的具体技术内容,以下结合实施例及附图详细说明如后,其中:In order to further illustrate the specific technical content of the present invention, below in conjunction with embodiment and accompanying drawing detailed description as follows, wherein:
图1是本发明的三维结构示意图;Fig. 1 is the three-dimensional structure schematic diagram of the present invention;
图2(a)是本发明图1中装样容器11的结构示意图;Fig. 2 (a) is the structural representation of
图2(b)是本发明图1中的圆形底座10的结构示意图;Fig. 2 (b) is the structural representation of the
图2(c)是本发明图1中卡带15的结构示意图;Fig. 2 (c) is the structural representation of
图3是本发明组合后样片安放的结构示意图;Fig. 3 is the structural representation of the placement of the sample after the combination of the present invention;
图4是本发明应用于旋转烘干的示意图;Fig. 4 is the schematic diagram that the present invention is applied to rotary drying;
图5是本发明旋转烘干完毕之后样品贴合的示意图;Fig. 5 is a schematic diagram of sample bonding after the spin drying of the present invention is completed;
图6是清洗完毕后键合InP/Si样品的红外透视图像。Figure 6 is an infrared perspective image of the bonded InP/Si sample after cleaning.
具体实施方式 Detailed ways
请参阅图1、图2(a)、图2(b)及图2(c)所示,本发明一种用于键合的清洗和干燥装置,其特征在于,包括以下几个部分:Please refer to Fig. 1, Fig. 2 (a), Fig. 2 (b) and shown in Fig. 2 (c), a cleaning and drying device for bonding of the present invention is characterized in that it includes the following parts:
一圆形底座10(图2(b)),该圆形底座10的下部为一圆盘101,圆盘101的上面中间有一凸柱102,整体截面的形状为倒T形;A circular base 10 (Fig. 2(b)), the bottom of the
一装样容器11(图2(a)),包括上下两部分,下部为中空的圆柱体111,其中间空出部分1110为圆柱形可套在底座10的凸柱102上;部为方形体112,该方形体112的中间为带有二级台阶的中空部1122;在方形体112相对的两侧壁上开有两个孔1121;该装样容器11外壁的中间凸出有一圆形凸边113;A sample loading container 11 (Fig. 2(a)) comprises two parts, the upper and lower parts, the lower part is a
其中所述的装样容器11的上部还可以为圆柱体;Wherein the upper part of the
两根两端带螺纹的螺杆12,下端接于底座10,上端穿过一根横梁13,用螺帽16接于螺杆12的上端;Two screw rods 12 with threads at both ends, the lower end is connected to the
两个插片14,可插在装样容器11上部方形体112的侧壁上开的孔1121内;Two
一卡带15(图2(c)),该卡带15为一环形体,该卡带15的侧壁上打有多数的小孔151;A cassette 15 (Fig. 2 (c)), the
当插片14插入装样容器11上的孔1121时,卡带15套置在装样容器11的上部方形体112上的插片14处,以固定插片14。When the
其中该清洗和干燥装置的材料采用不惧酸碱腐蚀的聚四氟材料,可承受250℃以内的溶液和干燥温度。Among them, the cleaning and drying device is made of PTFE material that is not afraid of acid and alkali corrosion, and can withstand the solution and drying temperature within 250 °C.
请再参阅图1、图2(a)、图2(b)及图2(c)所示,本发明分为两个部分,图2(a)包括装样容器11,两插片14及打了数排小孔的圆形卡带15;图2(b)包括圆形底座10,两根两端带螺纹的螺杆12,一根横梁13和两个螺帽16。圆形卡带15用于卡住插片14,使之在清洗或甩干时固定。装样容器11上部可以为方形,也可为圆形,视需要键合的样品形状而定。Please refer to Fig. 1, Fig. 2 (a), Fig. 2 (b) and shown in Fig. 2 (c), the present invention is divided into two parts, and Fig. 2 (a) comprises
由于键合工艺要求原子级平滑洁净的表面,因而对清洗和干燥过程有很高的要求,应该尽可能的保证在此过程不让镊子与晶片表面接触,以免引入金属离子或刮伤表面。首先将要键合的样品之一放于装样容器11的底部,需要键合的光亮表面朝上。然后将两插片14分别插入装样容器11侧壁上的孔1121,再用圆形卡带15套在插片14上,以使插片14固定锁死。然后将要键合的另一样品放入装样容器11内,键合面朝下,保证两块样品键合表面相对,中间以插片14隔开。再将装样容器11放置于底座10上,然后将螺杆12、横梁13和螺帽16分别装上,整个结构便如图3所示。如此便可安全方便的进行样品的表面清洗工艺。我们用Si、InP键合样品进行了该结构的装置的性能测试,清洗程序如下:首先采用丙酮、乙醇进行超声清洗(各清洗5分钟,温度恒定在60度),然后用硫酸双氧水混合液进行表面处理,再用稀的HF酸(HF∶H2O=1∶10)去除表面的氧化物。如此,整个清洗过程便完成了。清洗过程用到四个烧杯,分别用于盛放丙酮、乙醇、硫酸双氧水混合液和HF酸溶液。整个清洗程序无需镊子操作,从一种溶液到另一种溶液的转移只需将装置从一个烧杯转移到另一个烧杯即可。且由于样品表面以插片14隔开,亦不用担心晶片表面的彼此摩擦和碰撞引起的表面刮伤。本发明的提出使得键合的清洗工作变得简单易行,因而有很好的可操作性。Since the bonding process requires an atomically smooth and clean surface, it has high requirements for the cleaning and drying process. It should be ensured that the tweezers are not in contact with the wafer surface during this process as much as possible, so as not to introduce metal ions or scratch the surface. First, one of the samples to be bonded is placed on the bottom of the
在清洗完毕之后,装样容器11就可从底座10提出,然后放置在甩胶机上进行旋转烘干(见图4),从而可以轻松实现从清洗到旋转干燥的转换,无需镊子的夹持,并实现两块样品的同步旋转干燥。旋转干燥采用参数如下:旋转速度3000转/分钟,旋转时间30秒,红外灯功率150W。After the cleaning is completed, the
旋转烘干完毕之后,将圆形卡带15取下,再将插片14拔出,样品即可贴合(见图5)。至此清洗、干燥工艺已经完成,然后用镊子将清洗、干燥完毕的样品从装样容器11内取出,即可放入退火炉中进行退火处理。After the spin drying is completed, the
这样处理后的样品表面光亮而且无损伤,能够达到键合要求的表面平整度和洁净度,因而很容易实现Si/InP的键合。图6为该样品的红外透视图像,亮区为键合成功部分,暗区为未键合部分。由图可见,样品键合基本均匀,除仍旧存在一些边界效应之外,界面良好,说明清洗和干燥工艺使样品得到了洁净而光滑的表面,本发明的特征从而得以体现。The surface of the sample treated in this way is bright and without damage, and can achieve the surface flatness and cleanliness required by bonding, so it is easy to realize Si/InP bonding. Figure 6 is an infrared perspective image of the sample, the bright area is the successfully bonded part, and the dark area is the unbonded part. It can be seen from the figure that the bonding of the sample is basically uniform, except that some boundary effects still exist, and the interface is good, indicating that the cleaning and drying process makes the sample obtain a clean and smooth surface, and the characteristics of the present invention are thus reflected.
上文仅是对本发明的说明性描述和验证,在不脱离本发明的原理和使用范围的情况下,熟练的实验人员可以对实验方法以及一些具体设计细节进行符合自己要求的改变,任何不脱离本发明基本思想的设计和改进,均应包含在本发明所述的权利要求中。The above is only an illustrative description and verification of the present invention. Without departing from the principle and scope of use of the present invention, skilled experimenters can make changes to the experimental methods and some specific design details that meet their own requirements. The design and improvement of the basic idea of the present invention should be included in the claims of the present invention.
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CN1521807A (en) * | 2003-02-11 | 2004-08-18 | 厦门大学 | Silicon-to-silicon vacuum bonding device and bonding method |
JP2005136285A (en) * | 2003-10-31 | 2005-05-26 | Kazuo Tanabe | Wafer bonding method and apparatus |
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CN1258092A (en) * | 1998-11-06 | 2000-06-28 | 佳能株式会社 | Sample processing system |
US20030181123A1 (en) * | 2002-03-20 | 2003-09-25 | Lee Sang Seok | Method for cleaning bonding chamber of bonding machine |
CN1521807A (en) * | 2003-02-11 | 2004-08-18 | 厦门大学 | Silicon-to-silicon vacuum bonding device and bonding method |
JP2005136285A (en) * | 2003-10-31 | 2005-05-26 | Kazuo Tanabe | Wafer bonding method and apparatus |
CN1648662A (en) * | 2005-02-06 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | A low-temperature bonding method for glass microfluidic chips |
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