CN100439559C - Ceramic sputtering targets of tantalum-base compound and its use method and preparation method - Google Patents
Ceramic sputtering targets of tantalum-base compound and its use method and preparation method Download PDFInfo
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- CN100439559C CN100439559C CNB2005100649111A CN200510064911A CN100439559C CN 100439559 C CN100439559 C CN 100439559C CN B2005100649111 A CNB2005100649111 A CN B2005100649111A CN 200510064911 A CN200510064911 A CN 200510064911A CN 100439559 C CN100439559 C CN 100439559C
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 38
- 239000000919 ceramic Substances 0.000 title claims abstract description 36
- 238000005477 sputtering target Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 19
- 239000010949 copper Substances 0.000 claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 238000001465 metallisation Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- 239000011812 mixed powder Substances 0.000 claims description 8
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 3
- 238000001513 hot isostatic pressing Methods 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 9
- 239000013077 target material Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000002490 spark plasma sintering Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The present invention relates to ceramic sputtering target material of a tantalum base compound for a copper metallizing treatment blocking layer. The ceramic sputtering target material is composed of Ta1CxNyOz, wherein the total value of the x, the y and the z is more than 0 but is less than 2.5; the value of the x is equal to or more than 0 but is less than 1.5; the value of the y is equal to or more than 0 but is less than 1.7; the value of the z is equal to or more than 0 but is less than 2.5, wherein the operating performance of a traditional reaction sputtering blocking layer can be simplified by that the target material is directly used for sputtering, and the pollution of equipment can be reduced so that the sputtering cost can be saved. The present invention simultaneously discloses an application method and a preparation method of the ceramic sputtering target material of the tantalum base compound.
Description
Technical field
The present invention is about a kind of ceramic sputtering target, particularly a kind ofly is used for ceramic sputtering target and application method and the preparation method that copper metallization is handled the tantalum-base compound of barrier layer.
Background technology
Diffusion barrier during copper metallization is handled is very important to semiconductor industry, mainly forms this barrier layer between copper metal layer and insulating oxide; Production for TFT-LCD also is no less important, and it is being for to be formed at before the new copper metal layer storehouse between copper layer and the oxidation grid, constitutes on structure: glass matrix/copper layer/barrier layer/oxidation grid.Simultaneously, this kind diffusion barrier also becomes replacement ZnS/SiO in optical R/W (optical recording) use
2Selection, selection on the material is also very multiple, for example, employed now tantalum nitride (TaN) barrier layer carries out " reactive sputter " by pure metal targets and forms, yet this reactive sputter program can limit the adaptability (tuning) of barrier layer because of the composition of target, also therefore limited the conduction property adjusted of copper thin metal layer (thin film), for instance, the resistivity of TaN is promptly up to 560 μ Ω m, and is totally unfavorable for the barrier layer of stressing low-resistivity.General performance requriements for this kind diffusion barrier in the copper metallization processing procedure, it includes: low-resistivity (low resistivity), high anti-electronic migration ability, low metal diffusing coefficient, low ohm contact, thermostability are good, and the good speciality of tack.
Another kind of emerging material is the carbide of refractory metal, and it has lower resistivity compared with nitride, therefore more is applicable to the application as barrier layer.Yet, more difficult with the film of reaction sputter fabrication techniques carbide, can originally under the environment of sputter, can form carbon black granules because of carbonaceous gas simultaneously, be deposited on the pollution problem that causes sputtering equipment serious in the equipment, and produce violent particle and disperse phenomenon (severe particle emission).
In addition, material from silicon oxidation grid (gate oxide) to other is (as the element tantalum, chromium), all learnt the barrier layer that oxynitrides is all arranged, it compares to the pure zirconia layer and has more effect, because oxynitride can form the film of amorphous phase, but it is when synthetic this kind oxynitrides, in operation, must import nitrogen or oxygen mixes with rare gas element, carry out needed nitrogen composition of reactive sputter or oxygen composition when synthesizing to provide, therefore trouble comparatively in operation needs simultaneously because the further supervisory system pressure of importing of gas stable.
Though the technology that forms tantalum nitride (TaN) film with ceramic target is arranged in existing technology, it is still to be overcome with the technical problem that is applied in the sputter process because can't reach enough density.
Summary of the invention
Therefore, because on the existing tantalum base constituent material behavior, still have further improved space, a kind of ceramic sputtering target that is used for the tantalum-base compound of copper metallization processing barrier layer of the special proposition of the inventor, in the hope of the character of the diffusion barrier in the processing of enhancement copper metallization, and overcome prior art simultaneously in operational shortcoming.
Main purpose of the present invention is to provide a kind of ceramic sputtering target that copper metallization is handled the tantalum-base compound of barrier layer that is used for, and it has following composition:
Ta1C
xN
yO
z
0<(x+y+z)<2.5;
0<x<1.5;
0≤y<1.7;
0≤z<2.5;
Wherein, in forming, contain oxygen element, and reach the purpose that forms the amorphous phase barrier layer, and can obviously not reduce copper layer electricity and hot conductivity; When in composition, adding carbon, and reach the purpose that barrier layer has splendid thermostability.
Another purpose is used for the application method that copper metallization is handled barrier layer for a kind of aforementioned tantalum-base compound ceramic sputtering target is provided among the present invention, and it includes the following step:
Prepare the ceramic sputtering target of the tantalum-base compound of a sputtering substrate and an aforementioned component; With
The ceramic sputtering target of sputtering substrate and tantalum-base compound inserted carry out sputter operation in the magnetic control sputtering plating system, to form the barrier layer of a tantalum-base compound in substrate surface.
Another purpose is for providing a kind of preparation method of aforementioned tantalum-base compound ceramic sputtering target among the present invention, and its main method includes:
Prepare the powder of tantalum carbide, tantalum nitride, tantalum oxide and graphite;
The powder of getting more than one arbitrarily forms a mixed powder;
With this mixed powder at 1200-2100 ℃ of high temperature, high pressure more than the 20MPa to form a homogeneous phase and to have the ceramic sputtering target of the tantalum-base compound more than 98% theoretical density.
Description of drawings
Fig. 1: (A) the scanning type electron microscope of TaC/C target (scanning electronmicroscope, electronics dorsad SEM) (back scattering electron, BSE) striograph; And (B), electron probe microanalysis (EPMA) (electro-probemicroanalysis, the composition analysis figure of C EPMA) and Ta of (C) scanning type electron microscope.Image size 250 μ m * 250 μ m.
Fig. 2: scanning type electron microscope (scanning electronmicroscope, SEM) image of TaNO target broadwise out section.Image size 2mm * 2mm.
Fig. 3: the transmission electron microscope of TaNO plated film (transmission electronmicroscope, TEM) image.Thickness 200nm.
Embodiment
The ceramic sputtering target of the present invention's the tantalum-base compound that is used for copper metallization processing barrier layer, it has following composition:
Ta1C
xN
yO
z
0<(x+y+z)<2.5;
0<x<1.5;
0≤y<1.7;
0≤z<2.5;
By above-mentioned formula as can be known, sputtered target material of the present invention can include Ta for the material of variation
1C
x, Ta
1N
y, Ta
1O
z, Ta
1C
xN
y, Ta
1C
xO
z, Ta
1N
yO
z, and Ta
1C
xN
yO
z, to be deployed into the target of heterogeneity and different ratios according to different barrier layer demands, to reach the composition demand of sputter barrier layer.
Wherein, preferably, oxygen element is contained in 0<z in this target<2.5 in forming, and reaches the purpose that forms the amorphous phase barrier layer, and can obviously not reduce copper layer electricity and hot conductivity; Preferably, 0<x in this target<1.5 when adding carbon in composition, and reach the purpose that barrier layer has splendid thermostability.
Handle the barrier layer application method when aforementioned tantalum-base compound ceramic sputtering target is used for copper metallization, it includes the following step:
(1) ceramic sputtering target of the tantalum-base compound of preparation one base material and an aforementioned component, this base material can be Silicon Wafer.
(2) ceramic sputtering target of base material and aforementioned tantalum-base compound is inserted carry out the sputter operation in the magnetic control sputtering plating system, to form the barrier layer of a tantalum-base compound in substrate surface.
Because the direct hot pressing of tantalum-base compound of the composition that the target among the present invention is required with barrier layer sinters target into, carry out the sputter operation, therefore when operation, need not add the gas (as nitrogen, carbon back reactant gases or the like) of synthetic ingredient other shape, but directly with all the components sputter on base material, do not influence the stability in when operation, allow the sputter flow process is oversimplified, stay in gradeization.
In addition, about the preparation method of tantalum-base compound ceramic sputtering target among the present invention, its main method includes following step:
(1) powder of preparation tantalum carbide, tantalum nitride, tantalum oxide and graphite;
(2) get more than one powder arbitrarily,, form a mixed powder according to mixing behind the required composition ratio weighing;
(3) with refinement or the mixing equipment of this mixed powder, carry out powder sintered pre-process according to powder such as needs use ball mill or mixers.
(4) powder of uniform mixing is cooperated the shaping dies of high temperature resistant material making; and at 1200-2100 ℃ of high temperature, high pressure more than the 20MPa; and (for example: rare gas elementes such as argon gas), making forms a homogeneous phase and has the ceramic sputtering target that can reach the above tantalum-base compound of 98% theoretical density under vacuum or protective gas atmosphere.
Aforesaid formation method can be used hot compacting (hot pressing) or discharge electricity slurry sintering process (Spark Plasma Sintering), is being higher than more than 1500 ℃, and the temperature that is preferably more than 1800 ℃ forms.If composition only is Ta
2O
5Its temperature is to get final product more than 1200 ℃.In addition, the ceramic sputtering target of tantalum-base compound of the present invention can all press also that (Hot IsostaticPressing, HIP) mode forms with heat.
Below make the preferred embodiment of ceramic sputtering target for several:
Embodiment one:
With tantalum carbide (Ta
2C) mix with powdered graphite to form a tantalum carbide (Ta
2C) account for the constituent that 35mole% (not ear per-cent) and carbon account for 65 (mole%), this constituent carries out hot pressing under 2100 ℃ of temperature and 30MPa pressure, by this, one have high-density, microstructure is that tantalum carbide is uniformly distributed in the graphite base (graphite matrix), and the composition ratio is that the target of Ta/C=1/1.46 is promptly accused and finished, and please refer to shown in Fig. 1 (A)-(C).The homologous series experimental result shows that Ta/C composition ratio is higher than 1/2.5 above scope, uses the technology of this example can obtain the target of high-density and leakless.
Embodiment two:
Tantalum nitride (TaN) is mixed with tantalum oxide (TaO) to form a constituent (ratio TaN/TaO=80/20mole%), and this constituent carries out hot pressing under 1800 ℃ of temperature and 30MPa pressure, by this, and an even and highdensity Ta
1N
0.8O
0.2Target promptly accuse and finish, please refer to shown in Figure 2ly, the surface of this target presents the state of atresia, and on whole target the homogeneous granules structure is arranged.
Carry out non-reacted sputter with the target among the embodiment two, form the barrier layer of a 200nm thickness, please refer to shown in Figure 3ly, this barrier layer presents the structure of an amorphous phase, and mat its consist of Ta
1N
0.65O
0.1, it has the low resistance (existing be 560 μ Ω m for TaN barrier layer) of 230 μ Ω m, and if the result shows and directly imports the oxygen composition by target when sputter, can significantly reduce the degeneration of finished product conductivity.
As shown in the above description, the ceramic sputtering target of the present invention's the tantalum based compound that is used for copper metallization processing obstruction layer and application process thereof and preparation method have following advantage:
1. tantalum based compound ceramic sputtering target of the present invention, it has high density, can become Be applied to merit non-reacted sputter operation.
2. use tantalum based compound ceramic sputtering target of the present invention to replace traditional simple metal target Material can effectively be simplified the sputter operating procedure, keeps the stay in grade that sputter hinders layer.
3. the tantalum based compound ceramic sputtering target among the present invention, in manufacturing process can with The required obstruction composition of layer of user ratio, the ratio of suitably allocating powder, and can simply finish Reach the purpose of adjusting.
4. when composition contains carbon in the obstruction layer of sputter, use tantalum based compound of the present invention to make pottery The porcelain sputtered target material can be directly with the state sputter of compound on base material, avoid the carbon back reaction gas The use of body, therefore not having reacting gas is carbonized into deposition of soot, can reduce process apparatus Pollute.
Claims (8)
1. one kind is used for the ceramic sputtering target that copper metallization is handled the tantalum-base compound of barrier layer, it is characterized in that having following composition:
Ta
1C
xN
yO
z
0<(x+y+z)<2.5;
0<x<1.5; 0≤y<1.7; With
0≤z<2.5
2. the ceramic sputtering target of tantalum-base compound as claimed in claim 1 is characterized in that, the scope of z further is reduced into 0<z<2.5.
3. the application method of a tantalum-base compound ceramic sputtering target as claimed in claim 1 is characterized in that, includes the following step:
Prepare the ceramic sputtering target of the tantalum-base compound of a base material and an aforementioned component;
The ceramic sputtering target of base material and tantalum-base compound inserted carry out sputter operation in the magnetic control sputtering plating system, to form the barrier layer of a tantalum-base compound in substrate surface.
4. method as claimed in claim 3 is characterized in that, this base material is a Silicon Wafer.
5. preparation method who makes tantalum-base compound ceramic sputtering target as claimed in claim 1 is characterized in that this method includes the following step:
Prepare the powder of tantalum carbide, tantalum nitride, tantalum oxide and graphite;
Get more than one powder arbitrarily, according to forming a mixed powder behind the composition ratio weighing;
Use the thinning apparatus ball mill of powder; above-mentioned mixed powder is carried out powder press the knot pre-process; cooperate high temperature resistant material to make shaping dies in mixed uniformly powder; and at 1200-2100 ℃ of high temperature, high pressure more than the 20MPa; under vacuum or the protective gas atmosphere, make forming an even phase and having the ceramic sputtering target that can reach the above tantalum-base compound of 98% theoretical density.
6. method as claimed in claim 5 is characterized in that, the formation method of target is selected from: hot compacting method, discharge electricity slurry sintering process and hot isostatic pressing.
7. system of making tantalum-base compound ceramic sputtering target as claimed in claim 1
Preparation Method, its method includes following step:
Prepare the powder of tantalum carbide, tantalum nitride, tantalum oxide and graphite;
Get more than one powder arbitrarily, according to forming a mixed powder behind the composition ratio weighing;
Use the mixing equipment amalgamator of powder; above-mentioned mixed powder is carried out powder press the knot pre-process; cooperate high temperature resistant material to make shaping dies in mixed uniformly powder; and at 1200-2100 ℃ of high temperature, high pressure more than the 20MPa; and under vacuum or protective gas atmosphere, make forming an even phase and having the ceramic sputtering target that can reach the above tantalum-base compound of 98% theoretical density.
8. method as claimed in claim 7, wherein the formation method of target is selected from: hot compacting method, discharge electricity slurry sintering process.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001303240A (en) * | 2000-04-26 | 2001-10-31 | Toshiba Corp | Sputtering target |
WO2004009865A1 (en) * | 2002-07-23 | 2004-01-29 | Heraeus, Inc. | FABRICATION OF B/C/N/O/Si DOPED SPUTTERING TARGETS |
US20040141870A1 (en) * | 2003-01-07 | 2004-07-22 | Michaluk Christopher A. | Powder metallurgy sputtering targets and methods of producing same |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001303240A (en) * | 2000-04-26 | 2001-10-31 | Toshiba Corp | Sputtering target |
WO2004009865A1 (en) * | 2002-07-23 | 2004-01-29 | Heraeus, Inc. | FABRICATION OF B/C/N/O/Si DOPED SPUTTERING TARGETS |
US20040141870A1 (en) * | 2003-01-07 | 2004-07-22 | Michaluk Christopher A. | Powder metallurgy sputtering targets and methods of producing same |
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