CN100437317C - Liquid crystal display device - Google Patents

Abstract

A liquid crystal display device of the present invention comprises an array substrate equipped with signal lines and scan lines deployed in a matrix arrangement, thin film transistors (TFTs) provided near the intersections of the signal lines and scan lines, and pixel electrodes of which one is provided in each of the pixel domains delimited by the signal lines and scan lines ; a color filter substrate on which are formed color filters and common electrodes; and a liquid crystal layer placed between said two substrates; wherein the pixel electrodes are positioned so as not to overlap the signal lines, or not to overlap the scan lines, or not to overlap either, when viewed from above, and below the spaces between adjacent pixel electrodes, resin black matrices are deployed so as to overlap the pixel electrodes when viewed from above. These features allow a liquid crystal display device to be provided that can prevent light leakage from the peripheral portions of the scan lines and signal lines, as well as curb display defects such as crosstalk, and that additionally achieves efficient power consumption.

Description

Liquid crystal display device

technical field

The present invention relates to a liquid crystal display device, in particular to a liquid crystal capable of reducing electrostatic capacitance generated between scanning lines, signal lines and pixel electrodes, and between scanning lines, signal lines and common electrodes, so as to prevent display defects and reduce power consumption display device.

Background technique

In recent years, application of liquid crystal display devices has rapidly spread not only in information and communication equipment but also in general electronic equipment. Since this liquid crystal display device does not emit light by itself, a transmissive liquid crystal display device in which a backlight is provided on the back side of a substrate is often used.

Hereinafter, a general transmissive liquid crystal display device conventionally used will be described with reference to FIGS. 5 and 6 . FIG. 5 is a schematic plan view showing a pixel portion of a conventional liquid crystal display device enlargedly and showing a color filter substrate through a perspective, and FIG. 6 is a cross-sectional view taken along line VI-VI of FIG. 5 .

The existing liquid crystal display device 10A described in FIG. 5 and FIG. 6 is composed of: an array substrate 11, a color filter substrate 12, and a liquid crystal layer 13 arranged between the two substrates, wherein the array substrate 11 has: The transparent substrate 31 that constitutes; It is made of conductive material, and a plurality of scanning lines 32 and signal lines 33 arranged on the surface of the transparent substrate 31 in a lattice shape; A thin film transistor (hereinafter referred to as TFT) 34 as a switching element; a plurality of auxiliary capacitor electrodes 36 which are made of conductive material and arranged between the scanning lines 32 approximately in parallel with the scanning lines 32; cover the scanning lines 32 and the auxiliary A gate insulating film 37 made of an inorganic insulating film for the capacitive electrode 36; a protective insulating film 38 made of an inorganic insulating film covering the signal line 33 and the TFT 34; The interlayer film 39; and surrounded by the scanning line 32 and the signal line 33 arranged on the interlayer film 39, and by the ITO (Indium Tin Oxide, indium tin oxide, which is arranged in a manner covering an area equivalent to one pixel) ) and the like constitute the pixel electrode 40 .

The TFT 34 includes: a source electrode S branched from the signal line 33; a gate electrode G branched from the scan line 32; a drain electrode D connected to the pixel electrode 40; and polysilicon (p-Si) or amorphous silicon (a- Silicon layer 35 made of Si) or the like. Further, the pixel electrode 40 is connected to the drain electrode D via the contact hole 41 provided in the interlayer film 39 located on the storage capacitor electrode 36 .

Moreover, the color filter substrate 12 includes: a transparent substrate 21 made of glass or the like; a black matrix (not shown) formed of metal chromium or the like formed on the surface of the transparent substrate 21 in a grid pattern; Color filters 22R, 22G, 22B composed of red (R), green (G), blue (B) and the like in the divided regions; The common electrode 23 constituted. Furthermore, the surfaces of the two substrates 11 and 12 are opposed to each other and their outer peripheries are bonded together with a sealing material (not shown), and the spacer 14 is arranged inside, and liquid crystal is sealed to form a liquid crystal layer, thereby producing a liquid crystal. Display device 10A.

This is described in, for example, Japanese Patent Application Laid-Open No. 2001-188256, and is a technique for increasing the aperture ratio of a liquid crystal display device. In this way, in order to increase the existing aperture ratio, as a technique for enlarging the area of the pixel electrode, a technique called FSP (field shield pixel) is known. The TFT is covered with an organic insulating film to form a surface The pixel electrode after overall planarization.

Contents of the invention

(Problem to be solved by the invention)

Fig. 7 is a cross-sectional view taken along line VII-VII of Fig. 5 . As shown in FIG. 7 , in a conventional liquid crystal display device 10A, side ends of pixel electrodes 40 covering an area equivalent to one pixel are formed so as to overlap scanning lines 32 and signal lines 33 in plan view. Its purpose is to prevent light leakage from the joint portion, that is, to prevent light leakage from the backlight of the liquid crystal display device 10A through the liquid crystal layer in the portion where the liquid crystal alignment is disordered by applying a voltage to the end of the pixel electrode, and to enable scanning. Where the line 32, the signal line 33 overlaps with the pixel electrode 40, generally, the scanning line 32 and the signal line 33 have the same width, and the width _L1 thereof is about 8 μm, and the width _L2 overlapping with the pixel electrode 40 is about 2 μm respectively.

However, when the pixel electrodes are formed on the scanning lines and signal lines, a predetermined capacitance Csd (, Cgd) is formed between the scanning lines 32 , the signal lines 33 and the pixel electrodes 40 as shown in FIG. 7 . If the capacitance Csd (, Cgd) is greater than a predetermined value, cross talk will occur on the display screen when the liquid crystal display device 10A is driven. Crosstalk occurs especially when a black display is performed on a white display background screen, and occurs around the black display. This crosstalk generation mechanism is considered to be due to the reason shown below. That is, FIG. 8 shows, for example, a screen in which crosstalk occurs in the liquid crystal display device 10A shown in FIGS. 5 to 7 . When a black screen is displayed on a white background as shown in Figure 8, the white background area is set as point X, and the upper and lower sides of the black screen, that is, the area on the side of the signal line is set as point Y, the voltage of each point X and Y The waveform is shown in Figure 9.

As shown in FIG. 9 , when a signal is applied to the gate electrode of the TFT, the TFT is driven to start writing to the pixel electrode. Then, the potential of the pixel electrode at this time is maintained for a predetermined period by the auxiliary electrode capacitance (see FIG. 9A ). In this write period, the white display potential written to the pixel electrode fluctuates up and down during the hold period in accordance with the amplitude of the counter electrode potential Vcom (see FIG. 9B ). In this state, when observing the voltage waveforms applied to the signal lines and pixel electrodes at point X and Y, the signal line at point X is always applied with a white display voltage before the next write-in period, and point X The potentials of some of the pixel electrodes fluctuate up and down with the same amplitude until the next writing period (see FIGS. 9C and 9D ).

On the other hand, when the voltage for black display is applied to the signal line at point Y part way, the potential of the pixel electrode at point Y part changes in amplitude while the voltage for black display is applied to the signal line (see 9E). As a result, the effective value of the voltage applied to the liquid crystal differs at points X and Y, resulting in a difference ΔV, which is displayed as a difference in luminance and causes crosstalk (see FIG. 9F ).

That is, in the liquid crystal display device 10A shown in the prior art, there is a capacitance Cgd generated between the scanning line 32 and the pixel electrode 40, and a capacitance Csd generated between the signal line 33 and the pixel electrode 40. And produce the problem of crosstalk. In order to solve this problem, if the capacitance of the capacitor formed by the overlapping portion of the auxiliary electrode capacitance 36 and the drain electrode D of the TFT 34 is increased, that is, the auxiliary capacitance as a signal holding capacitance for active matrix operation, the static electricity can be ignored. Capacitors Cgd and Csd, but in order to increase the auxiliary capacitance, the area of the auxiliary electrode capacitor 36 must be increased. Since the auxiliary electrode capacitor 36 is made of a light-shielding conductive material, the aperture ratio of each pixel will be increased. Lowering the problem.

Moreover, in the conventional liquid crystal display device 10A, as shown in FIG. A capacitance Csc is also formed between the electrodes 23 . This electrostatic capacitance Csc is also formed between the scanning line 32 and the common electrode 23 in the same manner. When this electrostatic capacitance is Cgc, an equivalent circuit of one pixel of the liquid crystal display device 10A is shown in FIG. 10 .

As shown in FIG. 10 , the capacitances Csc and Cgc adversely affect the counter electrode potential Vcom. More specifically, the capacitances Csc and Cgc consume power, so the power consumption of the liquid crystal display device 10A also increases. The problem.

In addition, TFTs used in liquid crystal display devices have the property that a weak current flows when irradiated with light. When this weak current is generated, flicker occurs because it hinders the ON/OFF control of the TFT. Therefore, in the existing liquid crystal display device, in order to prevent light from leaking to the TFT, the black matrix is arranged on the color filter substrate so as to overlap with the TFT in plan view, so as to prevent external light from being irradiated to the TFT. As a result, although external light can be suppressed to a certain extent from being irradiated to the TFT, since a relatively wide gap is formed between the TFT and the TFT in order to provide a black matrix on the color filter substrate, external light from an oblique direction cannot be prevented. In addition, the light from the backlight is irradiated on the black matrix made of metal chrome, and part of the light is reflected to be irradiated on the TFT, so there is a problem of light leakage to the TFT.

In view of the above-mentioned problems, the present inventors studied a liquid crystal capable of preventing light leakage and flicker from the peripheral portions of the scanning lines and signal lines, and suppressing generation of electrostatic capacitance between the signal lines and scanning lines and the pixel electrodes satisfactorily. As a result of the display device, it was found that by forming a resin black matrix wider than the signal line and the scanning line on the signal line and the scanning line, even if the pixel electrode does not overlap the signal line and the scanning line, no light leakage will occur, and due to the signal Lines and scanning lines do not need to be shielded between pixels, and the signal lines and scanning lines can be made narrow, so the capacitance of the electrostatic capacitance generated between the signal lines and scanning lines and the common electrode can be suppressed, thereby Research and create the present invention.

That is, an object of the present invention is to prevent light leakage from peripheral portions of scanning lines and signal lines, suppress display defects such as crosstalk, and realize a liquid crystal display device with efficient power consumption.

(means to solve the problem)

In order to solve the above-mentioned problems, the invention of the liquid crystal display device according to the first aspect of the present invention has: a first substrate including signal lines and scanning lines arranged in a matrix, thin film transistors arranged near intersections of the signal lines and scanning lines, And the pixel electrodes arranged in each pixel area divided by the above-mentioned signal line and the scanning line; the second substrate is formed with a color filter, a common electrode, and a black matrix corresponding to the above-mentioned pixel area; and a liquid crystal layer is arranged on the above-mentioned two Between the substrates; wherein, the pixel electrode is disposed at a position where it does not overlap with at least one of the signal line and the scanning line in a plan view, and is located at a lower portion between the adjacent pixel electrodes so as to overlap the pixel electrode in a plan view Configured with a resin black matrix.

Furthermore, in the liquid crystal display device according to the first aspect, at least one of the signal lines and the scanning lines has a width of 3 to 5 μm, and the resin black matrix has a width of 6 to 10 μm.

Furthermore, in the liquid crystal display device according to the first aspect, the resin black matrix is buried in an interlayer film above the signal lines and the scanning lines, and the interlayer film is provided below between the pixel electrodes.

Furthermore, in the liquid crystal display device according to the first aspect, the resin black matrix is also disposed on the upper portion of the thin film transistor.

Furthermore, in the liquid crystal display device according to the first aspect, an interlayer film is provided under the pixel electrode, and a reflective film is provided at least partly between the pixel electrode and the interlayer film.

The invention of the liquid crystal display device according to the second aspect of the present invention has: a first substrate, including signal lines and scanning lines arranged in a matrix, thin film transistors provided near intersections of the signal lines and scanning lines; The pixel electrode of each pixel area divided by the signal line and the scanning line; the second substrate is formed with a color filter, a common electrode, and a black matrix corresponding to the above-mentioned pixel area; and a liquid crystal layer is arranged between the above-mentioned two substrates; wherein, The pixel electrode is provided at a position where it does not overlap with at least one of the signal line and the scanning line in a plan view, and an insulative insulating layer is disposed at a lower portion between adjacent pixel electrodes so as to overlap the pixel electrode in a plan view. Optical blocking member.

Furthermore, in the liquid crystal display device according to the second aspect, the light-shielding member is also provided above the thin film transistor.

In addition, in the liquid crystal display device according to the second aspect, the insulating light-shielding member and the black matrix on the side of the color filter substrate are made of different materials.

The invention of the liquid crystal display device according to the third aspect of the present invention has: a first substrate including signal lines and scanning lines arranged in a matrix, thin film transistors provided near intersections of the signal lines and scanning lines, and a substrate covering the thin film transistors. The interlayer film and the pixel electrodes arranged on the interlayer film, that is, the pixel regions of each pixel area divided by the above-mentioned signal lines and scanning lines; the second substrate is formed with color filters, common electrodes, and black electrodes corresponding to the above-mentioned pixel areas. a matrix; and a liquid crystal layer disposed between the above two substrates; wherein, the above-mentioned pixel electrode is arranged at a position that does not overlap with at least one of the above-mentioned signal line and the scanning line in a plan view, and in the lower part between the above-mentioned pixel electrodes, from the above-mentioned An insulating light-shielding member is provided on the edge of the signal line or the scanning line across the edge of the pixel electrode.

Furthermore, in the liquid crystal display device according to the third aspect, the light-shielding member is also provided above the thin film transistor.

Furthermore, in the liquid crystal display device according to the third aspect, the insulating light-shielding member and the black matrix on the side of the color filter substrate are made of different materials.

(effect of invention)

The present invention exhibits the following excellent effects by having the above configuration. That is, according to the invention of the liquid crystal display device according to the aspects of the present invention, the pixel electrode is provided at a position that does not overlap the signal line and the scanning line, but is formed in the lower portion between adjacent pixel electrodes so as to overlap the pixel electrode. There is a resin black matrix and an insulating light-shielding member, so light leakage does not occur between pixel electrodes. That is, in the conventional liquid crystal display device, in order to prevent light leakage from the peripheral portion of the signal line, etc., by overlapping the signal line and the pixel electrode, the alignment disorder caused by light irradiation on the edge of the pixel electrode is prevented. However, since the present invention shields light well through the resin black matrix and the insulating light-shielding member, it is not necessary to form pixel electrodes to replace the signal lines and scanning lines in a plan view so as to overlap with the signal lines and scanning lines. In this way, the electrostatic capacitance Csd that is generated between the pixel electrode and the signal line, that is, the electrostatic capacitance that causes crosstalk can be suppressed favorably. Therefore, even without increasing the storage capacitance electrode constituting the storage capacitance as the signal storage capacitance, area, and display defects such as crosstalk can also be suppressed. In addition, since the electrostatic capacitance can be suppressed, the power consumed by the electrostatic capacitance can also be suppressed, and a liquid crystal display device with reduced power consumption can be provided. Furthermore, since the capacitance Csd applies various signals to the signal line, the capacitance between the signal line and the pixel electrode tends to be larger than the capacitance between the scanning line and the pixel electrode, so the resin black matrix Set it on at least the signal line. This is because the scanning line supplies only the ON/OFF signal to the TFT so that the capacitance does not become too large. However, if the resin black matrix is also provided on the scanning line, it will not cause display failure here, and the electrostatic capacitance between the scanning line and the pixel electrode and the scanning line and the common electrode can also be reduced, so it is possible to realize a low power consumption. Liquid crystal display device.

In the above-mentioned first aspect, since signal lines and scanning lines of about 8 μm conventionally required to ensure optical shielding properties are not required, they can be made 3 to 5 μm thinner than about 8 μm, preferably 4 μm. As a result, the capacitance generated between the narrower signal lines and scanning lines and the pixel electrodes is inevitably reduced, and a liquid crystal display device with higher power consumption efficiency can be realized. And at this time, instead of the signal line and the scanning line, the width of the resin black matrix used to maintain the light-shielding property between the pixel electrodes is 6 to 10 μm, preferably 8 μm, which is equal to the existing signal line and scanning line. There is a problem that the opacity is lower than before.

Furthermore, in the above-mentioned first aspect, the resin black matrix is buried in the interlayer film, so the thickness of the interlayer film can be made the same as that of the conventional one, so there is no problem of thickening the liquid crystal display device itself, and the resin black matrix Since the matrix is arranged surrounded by an organic or inorganic insulating film, it is not adversely affected by charges from the respective wirings.

Moreover, in the above-mentioned aspects, though the resin black matrix and the light-shielding member arranged between the pixel electrodes can suppress light leakage on the wiring, etc., if the resin black matrix and the light-shielding member are also arranged on the TFT, components, it is possible to reliably prevent light from leaking to the TFT. That is, compared with the case where the black matrix is provided on the color filter substrate as in the prior art, the distance between the black matrix and the TFT is extremely narrow, so the intrusion of oblique external light and light reflection from the backlight hardly occur. In the case of irradiating the resin black matrix and irradiating the TFT, flickering can be well suppressed. In addition, the resin black matrix and the light-shielding member disposed on the TFT can use the same material as the resin black matrix and the light-shielding member described above. Therefore, if the resin black matrix and the light-shielding member arranged between the pixel electrodes are If it is formed in the same step, the manufacturing steps will not be increased, so it is preferable.

Furthermore, in the above-mentioned first aspect, it is not limited to the transmissive liquid crystal display device, and if a reflective film is formed on the light-shielding portion provided with, for example, the storage capacitor electrode and the TFT in one pixel area, it becomes a semi-transmissive liquid crystal display device. A reflective liquid crystal display device is a reflective liquid crystal display device when a reflective film is formed on the entire pixel region. By including any of the above configurations, it is possible to provide a liquid crystal display device that suppresses display defects and efficiently consumes power.

Description of drawings

FIG. 1 is a schematic plan view showing enlarged one pixel portion of a liquid crystal display device according to an embodiment of the present invention and seeing through a color filter substrate.

Fig. 2 is a sectional view cut along line II-II of Fig. 1 .

Fig. 3 is a sectional view taken along line III-III of Fig. 1 .

Fig. 4 is a sectional view cut along line IV-IV in Fig. 1 .

5 is a schematic plan view showing one pixel of a conventional liquid crystal display device enlarged and seeing through a color filter substrate.

Fig. 6 is a cross-sectional view taken along line VI-VI of Fig. 5 .

Fig. 7 is a cross-sectional view taken along line VII-VII of Fig. 5 .

FIG. 8 is a schematic diagram showing a screen where crosstalk occurs.

9A to 9F are diagrams showing voltage waveforms at various points of the liquid crystal display device when crosstalk occurs.

FIG. 10 is an equivalent circuit for one pixel of a conventional liquid crystal display device.

11 is a schematic plan view showing enlarged one pixel portion of a liquid crystal display device according to another embodiment of the present invention and seeing through a color filter substrate.

12A is a cross-sectional view taken along line XII-XII of FIG. 11, and FIG. 12B is a cross-sectional view of a conventional liquid crystal display device.

Explanation of main component symbols

10. 10A liquid crystal display device 11 Array substrate

12 color filter substrate 13 liquid crystal layer

14 spacer 21, 31 transparent substrate

22R, 22G, 22B color filters 23 common electrodes

32 scan lines 33 signal lines

34 thin film transistor (TFT) 35 silicon layer

36 Auxiliary capacitor electrode 37 Gate insulating film

38 Protective insulating film 39 Interlayer film

40 pixel electrodes 41 contact holes

45 (signal line side) resin black matrix

46 (scanning line side) resin black matrix

48, 49 shading components 50 black matrix

S source electrode G gate electrode

D drain electrode

Detailed ways

Hereinafter, the best mode for carrying out the present invention will be described with reference to the drawings. However, the embodiments shown below are examples, and the liquid crystal display device for embodying the technical idea of the present invention is not intended to limit the present invention to the liquid crystal display device, and it is also applicable to other liquid crystal display devices included in the claims. implementation.

(Example 1)

1 is an enlarged schematic plan view showing one pixel portion of a liquid crystal display device according to an embodiment of the present invention and seeing through a color filter substrate. FIG. 2 is a cross-sectional view cut along line II-II in FIG. 1 , and FIG. 4 is a sectional view cut along line IV-IV in FIG. 1 . In addition, in the liquid crystal display device 10 shown below, the same components as those of the conventional liquid crystal display device 10A are denoted by the same reference numerals and described.

The liquid crystal display device 10 of the present invention is shown in Figure 1 and Figure 2, is made up of array substrate 11, color filter substrate 12 and the liquid crystal layer 13 that is arranged between these two substrates, wherein, array substrate 11 has: The constituted transparent substrate 31; is made of conductive material, and a plurality of scanning lines 32 and signal lines 33 arranged on the surface of the transparent substrate 31 in a grid pattern; arranged near the intersection of the scanning lines 32 and signal lines 33 A thin film transistor (hereinafter referred to as TFT) 34 as a switching element; a plurality of auxiliary capacitor electrodes 36 which are made of conductive material and arranged between the scanning lines 32 substantially in parallel with the scanning lines 32; cover the scanning lines 32 and the auxiliary capacitor electrodes 36, a gate insulating film 37 made of an inorganic insulating film; a protective insulating film 38 made of an inorganic insulating film covering the signal line 33 and the TFT 34; a layer made of an organic insulating film provided on the protective insulating film 38 The interlayer film 39; and the scan line 32 and the signal line 33 surrounded by the interlayer film 39 are composed of ITO (Indium Tin Oxide, indium tin oxide), etc., which are arranged to cover an area equivalent to one pixel. and the resin black matrix 45, 46 embedded in the interlayer film 39 on the scanning line 32 and the signal line 33.

The TFT 34 comprises: the source electrode S branched from the signal line 33; the gate electrode G branched from the scan line 32; the drain electrode 35 connected to the pixel electrode 40; and polysilicon (p-Si) or amorphous silicon (a - a silicon layer 35 made of Si) or the like. Further, the pixel electrode 40 is connected to the drain electrode D via the contact hole 41 provided in the interlayer film 39 located on the storage capacitor electrode 36 .

The resin black matrixes 45 and 46 are the shaded parts in FIG. 1, and are made of a light-shielding resin material, and correspond to the scanning lines 32 and the signal lines 33, and the signal lines formed on the signal lines 33 are formed in a grid pattern. side resin black matrix 45 , and scan line side resin black matrix 46 formed on the scan line 32 . The line widths of the scanning lines 32 and the signal lines 33 are equal in this embodiment, so the line widths of the resin black matrices 45 and 46 are also equal, preferably 6 to 10 μm, most preferably 8 μm. At this time, the width of the scan lines 32 and the signal lines 33 is preferably 3 to 5 μm, more preferably 4 μm.

Moreover, the color filter substrate 12 includes: a transparent substrate 21 made of glass or the like; a black matrix (illustration omitted) formed of metal chromium or the like formed on the surface of the transparent substrate 21 in a grid pattern; Color filters 22R, 22G, 22B composed of red (R), green (G), blue (B) and the like in the area to be distinguished; The common electrode 23 constituted. Furthermore, by making the surfaces of the two substrates 11 and 12 face each other and bonding the outer peripheries of the two substrates 11 and 12 with a sealing material (not shown), and disposing the spacer 14 inside, and enclosing liquid crystal to form a liquid crystal layer, the substrate is manufactured. Liquid crystal display device 10 .

Next, the manufacturing steps of the array substrate 11 of the liquid crystal display device 10 of the present invention will be described.

First, a conductive material composed of aluminum, molybdenum, chromium, or alloys thereof of a predetermined thickness is formed on the transparent substrate 31 . Then, it is patterned by a known photolithography method, thereby etching and removing a part thereof, to form a plurality of scanning lines 32 extending laterally with a width of 4 μm, and to form storage capacitor electrodes between the plurality of scanning lines 32 36. In addition, the adjacent storage capacitor electrodes 36 are so-called Cs OnCommon type storage capacitor electrodes connected by narrow connecting wires.

Next, a gate insulating film 37 having a predetermined thickness is formed so as to cover the transparent substrate 31 on which the scanning lines 32 and the storage capacitor electrodes 36 are formed in the above steps. A transparent resin material made of silicon nitride or the like is used for the gate insulating film 37 . A semiconductor layer such as a-Si is formed on the gate insulating film 37 . Then, the portion covering the gate electrode G extending from the scanning line 32 remains, and the a-Si layer is removed by etching to form the silicon layer 35 which is a part of the TFT 34 . Next, use the same method as the above method to form: a plurality of signal lines 33 with a width of 4 μm extending in a direction perpendicular to the scanning lines 32; a source electrode S extended from the signal lines 33 and connected to the silicon layer 35; And the drain electrode D covering the auxiliary capacitor electrode 36 and having one end connected to the silicon layer 35 . Thus, the TFT 34 as a switching element is formed near the intersection of the scanning line 32 and the signal line 33 on the transparent substrate 31. Furthermore, the protective insulating film 38 is formed to be about 0.1 to 0.5 μm thick by using the CVD method (Chemical Vapor Deposition) to cover various wirings. The protective insulating film 38 is formed on the transparent substrate 31. It is composed of inorganic insulating materials used to stabilize the surface.

Next, resin black matrices 45 and 46 are formed on the scanning lines 32 and the signal lines 33 so as to cover the scanning lines 32 and the signal lines 33 . The resin black matrices 45 and 46 have a width of 8 μm and are formed so that the scanning lines 32 and the signal lines 33 located below the resin black matrices 45 and 46 cannot be seen in plan view (see FIGS. 3 and 4 ).

Next, an interlayer film 39 made of an organic insulating material for flattening the surface of the array substrate 11 is formed on the entire surface of the substrate by a spin coating method. The film thickness of the interlayer film 39 is approximately 2.0 to 3.0 μm at thicker locations.

In addition, the interlayer film 39 is formed so that the resin black matrices 45 and 46 are buried therein at the film-forming stage. In addition, a contact hole 41 for electrically connecting the pixel electrode 40 and the drain electrode D described later is provided in a portion of the interlayer film 39 on the auxiliary capacitor electrode 36, but the position of the hole is not limited to the auxiliary capacitor electrode 36. Capacitive electrode 36. However, the portion where the contact hole 41 is formed has a problem of uneven display quality because when the liquid crystal display device 10 is bonded to the color filter substrate 12, the distance between the substrates is different from that of other portions. Preferably, it is provided on the auxiliary capacitor electrode 36 made of a light-shielding material. A pixel electrode 40 made of, for example, ITO is formed for each pixel region surrounded by the scanning line 32 and the signal line 33 . At this time, the outer peripheral edge of the pixel electrode 40 is provided at a position where it does not overlap the adjacent scanning line 32 or signal line 33 in plan view, and the outer peripheral edge is formed so as to be located on the resin black matrix 45 , 46 . The array substrate 11 is manufactured through the above steps.

As described above, according to the liquid crystal display device 10 of the present invention, the outer peripheral edges of the pixel electrodes 40 are formed so as not to overlap the scanning lines 32 and the signal lines 33 in a planar view, but to overlap the resin black matrices 45 and 46 , and the outer peripheral edges of the pixel electrodes 40 are formed so as to overlap the resin black matrices 45 and 46 . The black matrices 45 and 46 can ensure good light-shielding properties, and can reduce the capacitance of electrostatic capacitors generated between the scanning lines 32 and signal lines 33 and the pixel electrodes 40 .

In addition, since the scanning lines 32 and the signal lines 33 can be formed without considering the light-shielding property, the line width can be reduced, for example, from about 8 μm to 4 μm. Therefore, the capacitance of the electrostatic capacitors Csc and Cgc (see FIG. 1 ) using the scanning line 32 and the signal line 33 and the common electrode 23 as electrodes can also be reduced, so that no power is consumed in the electrostatic capacitance, and it becomes an efficient The liquid crystal display device 10 operates by consuming electric power.

Moreover, in the above-mentioned embodiment, although the resin black matrix is only arranged between the adjacent pixel electrodes, that is, the scanning line and the signal line, when the resin black matrix is arranged on the TFT, it can well suppress the light leakage caused by light leakage. To the flicker produced by TFT, it is ideal. Furthermore, when the resin black matrix is to be formed on the TFT in this way, it is performed simultaneously with the step of forming the resin black matrix on the scanning lines and the signal lines. This point is described in detail in Example 2.

(Example 2)

11 is a schematic plan view showing enlarged one pixel portion of a liquid crystal display device according to another embodiment of the present invention and seeing through a color filter substrate, and FIG. 12A is a cross-sectional view showing a liquid crystal display device according to another embodiment of the present invention. On the other hand, those that are the same as those in Embodiment 1 are denoted by the same reference numerals. This cross-sectional view is a cross-sectional view showing the position of the signal line 33 and the position of the TFT 34 and cut along the line XII-XII. Fig. 12B is used for comparison with embodiment 2 and Fig. 12

A Existing sectional view of the same location.

In Example 2, similarly to Example 1, the signal line 33 is arranged so that the signal line 33 does not overlap the pixel electrode 40 in plan view, and the edge of the pixel electrode 40 is crossed from the edge of the signal line 33 at the lower part of the pixel electrode 40. On the other hand, an insulating light shielding member 48 is provided. The black matrix 50 on the side of the color filter substrate 12 that was not shown in the description of the first embodiment is shown in the second embodiment so as to overlap the scanning lines 32 and the signal lines 33 in plan view.

The insulating light-shielding member 48 can also be the same as the resin black matrix 45 of Embodiment 1, as long as it has light-shielding properties, it can also be an oxide of an insulator, but when considering the manufacturing surface, processing surface, etc., it is better to use resin. Whichever is better.

Specifically, the insulating light-shielding member 48 is a general resin material mixed with carbon particles coated with propylene. Since it has insulating properties, it is preferable to have a high resistance, specifically, 10 ¹³ Ω·cm or more. And the dielectric constant is preferably lower, and the dielectric constant ε is below 14F/m, more preferably below 10F/m, which is ideal for reducing unnecessary capacitance.

In addition, the light-shielding member 48 and the black matrix 50 on the side of the color filter substrate 12 are required to have light-shielding properties, but are made of different materials. The light-shielding member 48 is preferably one having as high light-shielding properties as possible, but does not necessarily have the same light-shielding properties as the black matrix 50 on the color filter substrate 12 side. Usually, the black matrix 50 on the side of the color filter substrate 12 is disposed closer to the transparent substrate 21 than the common electrode 23 formed in close contact with the entire surface of the substrate, so it is only necessary to consider the light-shielding property. Therefore, the general black matrix 50 is formed by depositing metallic chromium or the like into a film by a sputtering method. And although it is very thin at about 500, it has very high light-shielding properties, thereby preventing color mixing due to adjacent colors. On the other hand, the light-shielding member 48 is located between the signal line 33 and the pixel electrode 40 . As mentioned above, it is desired not only to have light-shielding properties, but also to have high resistance and low dielectric constant. Therefore, the characteristics of the material may be more important than the black matrix 50 , but the light shielding property may be inferior to that of the black matrix 50 .

This light-shielding member 48 is formed into a predetermined shape by the spin coating method similarly to Example 1. Specifically, in the conventional panel shown in FIG. 12B , not only the portion where the signal line overlaps with the pixel electrode, but also the upper portion of the signal line 33 is provided with a light shielding member 48 . Therefore, in the portion where the signal line and the pixel electrode overlap for conventional light shielding, the capacitance that must be generated can be greatly reduced, and in the conventional overlap of the signal line and the pixel electrode, light leakage near the edge of the pixel electrode can be prevented. It can also be prevented by the light shielding member 48 .

Since the light shielding member 48 is made of resin, it is easy to be formed thick. Therefore, by making the thickness approximately 1.0 to 1.5 μm, it is possible to effectively shield light from the backlight incident from an oblique direction. Furthermore, in order to cover and form the thicker light-shielding member 48 and make the surface on the array substrate 11 side flat, the pixel electrode 40 can be formed on the interlayer film 39 with a thickness of approximately 2.0 to 3.0 μm, so that an opening can be achieved. rate increase. In particular, by forming the light shielding member 48 thicker on the array substrate 11 side, it is possible to effectively shield the array substrate 11 from the light from the backlight incident from an oblique direction. light leak. Therefore, the black matrix 50 on the side of the color filter substrate 12 does not need to consider the light leakage of the backlight from the side of the array substrate 11 , so the black matrix 50 can be made finer, and the aperture ratio can be improved.

Furthermore, the upper portion of the light shielding member 48 is covered with an interlayer film 39 , but the pixel electrode 40 may be formed on the light shielding member 48 without providing the interlayer film 39 on this portion. However, the dielectric constant ε of the interlayer film 39 made of an organic insulating film is about 4 F/m. Compared with this, the dielectric constant of the light shielding member 48 is higher than that of the interlayer film 39 . It is preferable to have a structure in which the interlayer film 39 covers the upper part of the light shielding member 48 in advance for the required capacitance.

Also in Example 2, a light shielding member 49 is provided above the TFT 34 . The light shielding member 49 is provided with the same material and the same steps as the light shielding member 48 . In this way, by providing the light shielding member 49 on the TFT, the external light (shown in the direction of the arrow in the figure) incident from an oblique direction can be prevented by the light shielding member 49, and the light from the backlight can also be prevented by the light shielding member 49, which light It is reflected by the black matrix 50 on the side of the color filter substrate 12 made of metal chromium or the like. Therefore, the light is not irradiated on the TFT 34, but light leakage to the TFT can be prevented. In addition, since external light from an oblique direction has been prevented in the past, it is necessary to form a black matrix 50 on the side of the color filter substrate 12 to some extent so as to cover the TFT 34 slightly widely, but the above-mentioned steps are not necessary through the light shielding member 49. . Therefore, the black matrix 50 on the side of the color filter substrate 12 may also be formed with the same width as the TFT 34, and the black matrix 50 may not be provided on the TFT 34, thereby increasing the aperture ratio of the liquid crystal display device 10.

Furthermore, the light shielding member 48 covers the signal line 33 in a shape similar to a trapezoid, but is not limited to this shape. The light-shielding member 48 may be provided across the edge of the pixel electrode 40 from the edge of the signal line 33, and the light-shielding member 48 is provided across the edge of the pixel electrode 40 from one edge of the signal line 33, and across from the other edge of the signal line 33. A light shielding member 48 is arranged on the edge of the pixel electrode 40 , that is, light shielding members 48 may be provided on both sides of the signal line 33 respectively.

When making the liquid crystal display device 10 of the present invention a transflective type instead of a transmissive type, fine concavities and convexities are formed on the surface of the interlayer film 39 formed in regions other than the openings of the pixel regions, and in the concavo-convex portions A reflective film made of a light reflective material may be formed between the pixel electrode 40 and the pixel electrode 40 . Furthermore, when the liquid crystal display device is intended to be a reflective type, a reflective film may be formed in all regions between the interlayer film 39 and the pixel electrode 40 .

Claims (11)

1. liquid crystal indicator has:

The 1st substrate possesses: with the signal wire and the sweep trace of rectangular configuration, be arranged near thin film transistor (TFT) the cross part of above-mentioned signal wire and sweep trace and the pixel electrode that is arranged on each pixel region of being distinguished by above-mentioned signal wire and sweep trace;

The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And

Liquid crystal layer is configured between above-mentioned two substrates;

Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace, and the bottom between the pixel electrodes of adjacency disposes resin black matrix to overlook the overlapping mode of observation and pixel electrodes.

2. liquid crystal indicator according to claim 1, wherein, at least one side's of above-mentioned signal wire and sweep trace width is 3 to 5 μ m, the width of above-mentioned resin black matrix is 6 to 10 μ m.

3. liquid crystal indicator according to claim 1, wherein, above-mentioned resin black matrix is on the top of above-mentioned signal wire and sweep trace and be embedded in the interlayer film, and this interlayer film is arranged on the interelectrode bottom of aforementioned pixel.

4. liquid crystal indicator according to claim 1, wherein, above-mentioned resin black matrix also is arranged on the top of above-mentioned thin film transistor (TFT).

5. liquid crystal indicator according to claim 1 wherein, is provided with the interlayer film in the bottom of pixel electrodes, and at least a portion between pixel electrodes and above-mentioned interlayer film is provided with reflectance coating.

6. liquid crystal indicator has:

The 1st substrate possesses: with the signal wire and the sweep trace of rectangular configuration, be arranged near thin film transistor (TFT) the cross part of above-mentioned signal wire and sweep trace and the pixel electrode that is arranged on each pixel region of being distinguished by above-mentioned signal wire and sweep trace;

The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And

Liquid crystal layer is configured between above-mentioned two substrates;

Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace, and the bottom between the pixel electrodes of adjacency is to overlook the screening optical activity member that the overlapping mode of observation and pixel electrodes disposes insulativity.

7. liquid crystal indicator according to claim 6, wherein, above-mentioned screening optical activity member also is arranged on the top of above-mentioned thin film transistor (TFT).

8. liquid crystal indicator according to claim 6, wherein, the screening optical activity member of above-mentioned insulativity is made of different materials with the black matrix of above-mentioned filter substrate side.

9. liquid crystal indicator has:

The 1st substrate, possess signal wire and sweep trace, be arranged near the cross part of above-mentioned signal wire and sweep trace thin film transistor (TFT), cover the interlayer film of above-mentioned thin film transistor (TFT) and be arranged on the above-mentioned interlayer film, be i.e. the pixel electrode of each pixel region of distinguishing by above-mentioned signal wire and sweep trace with rectangular configuration;

The 2nd substrate is formed with the black matrix of color filter, common electrode and corresponding above-mentioned pixel region; And

Liquid crystal layer is configured between above-mentioned two substrates;

Wherein, pixel electrodes be arranged on overlook observation not can with at least one side's position overlapped of above-mentioned signal wire and sweep trace,

And the bottom between pixel electrodes is crossed the edge of pixel electrodes from the edge of above-mentioned signal wire or sweep trace and is provided with the screening optical activity member of insulativity.

10. liquid crystal indicator according to claim 9, wherein, above-mentioned screening optical activity member also is arranged on the top of above-mentioned thin film transistor (TFT).

11. liquid crystal indicator according to claim 9, wherein, the screening optical activity member of above-mentioned insulativity is made of different materials with the black matrix of above-mentioned filter substrate side.

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