CN100437240C - Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus - Google Patents

Abstract

An electro-optical device includes first and second substrates that are bonded to each other, the first substrate having an extended portion extended from the second substrate on a first side thereof in plan view, a plurality of pixel units that are disposed in a pixel region on the first substrate and individually have pixel electrodes, a data line driving circuit that is disposed along the first side in a peripheral region around the pixel region so as to supply an image signal to the pixel units, a plurality of external circuit connecting terminals that are arranged along the first side in a region of the peripheral region on the extended portion, an image signal line that is relayed around the data line driving circuit from the plurality of external circuit connecting terminals and has a first wiring line portion wired in a direction along the first side between the data line driving circuit and the pixel region, and a sealant that bonds the first and second substrates to each other in a sealing region around the pixel region. Each of the first wiring line portions is at least partially wired within the sealing region.

Description

Electro-optical device, manufacturing method thereof, and electronic device

technical field

The present invention relates to the technical field of an electro-optical device such as a liquid crystal device, a manufacturing method thereof, and an electronic device including the electro-optic device, such as a liquid crystal projector.

Background technique

In such an electro-optical device, a plurality of pixel electrodes arranged in a matrix are provided on, for example, a TFT array substrate, and a plane region where these pixel electrodes are arranged is used as an image display region. During its operation, image signals, scanning signals, and the like are supplied to electronic elements such as TFTs for pixel switches via wirings such as data lines and scanning lines. Then, matrix driving is performed by selectively supplying image signals and the like from electronic components to the pixel electrodes. That is, image display is performed in an image display region in which a plurality of pixel electrodes are planarly arranged in a matrix. The TFT array substrate constituted in this way is bonded to a counter substrate with predetermined intervals therebetween, and an electro-optic substance such as liquid crystal is sealed between these substrates. In such an area on the TFT array substrate, in the peripheral area located in the periphery of the image display area, driving circuit sections such as a scanning line driving circuit for supplying scanning signals and a data line driving circuit for supplying image signals are provided. There are a plurality of external circuit connection terminals, and a plurality of routing wirings including image signal lines and the like routed from them to the drive circuit section.

Patent Document 1: JP-A-10-253990.

However, in the peripheral region, it is necessary to form the driving circuit portion, the external circuit connection terminal, and the lead wiring as described above on the protruding region protruding from the counter substrate when viewed from the normal direction of the substrate. In terms of area, it is also necessary to ensure a margin area required for cutting from the mother substrate. In particular, for the purpose of avoiding increasing the driving frequency and performing high-definition image display, an electro-optical device that supplies a plurality of image signals that have been generalized in the form of serial-parallel conversion or phase expansion is used for supplying The number of external circuit connection terminals for these multiple image signals and the number of image signal lines also increase. For example, electro-optic devices have also been developed in which the number of serial-to-parallel conversions or phase expansion numbers are 24, 48, 96, etc., but due to the existence of a plurality of external circuit connection terminals and a plurality of image signal lines, the protruding area must not Does not grow. Therefore, there is a technical problem that the TFT array substrate cannot be miniaturized or the electro-optic device cannot be miniaturized while keeping the area of the image display area as it is because the protruding area or the peripheral area cannot be used as the image display area.

Contents of the invention

The present invention was made in view of the above problems, and an object of the present invention is to provide an electro-optical device capable of being miniaturized while maintaining the same area of an image display region, a manufacturing method thereof, and various electronic devices including such an electro-optical device.

In order to solve the above-mentioned problems, the electro-optical device of the present invention is constituted by bonding a pair of the first and the second substrates, and the above-mentioned first substrate has a protruding portion protruding from the above-mentioned second substrate in plan view on its first side. The electro-optic device is characterized in that the above-mentioned first substrate is provided with: a plurality of pixel parts arranged in the pixel area and each having a pixel electrode; a data line drive circuit for supplying an image signal to the above-mentioned pixel portion; a plurality of external circuit connection terminals arranged along the first side in an area located on the above-mentioned protruding portion among the above-mentioned peripheral areas; A plurality of external circuit connection terminals are routed along the periphery of the data line driving circuit and the image signal lines of the first wiring portion are routed between the data line driving circuit and the pixel region in the direction of the first side; and A sealing material for bonding the first and second substrates to each other in a sealing area along the periphery of the pixel area; wherein the first wiring portion is at least partially wired in the sealing area.

According to the electro-optical device of the present invention, during its operation, by supplying an image signal to the pixel portion from the data line driving circuit, an electro-optic device such as liquid crystal sandwiched between the first and second substrates is driven in each pixel portion. matter, for active matrix drive. In addition, a plurality of such scanning lines and data lines are wired, for example, so as to cross each other on the first substrate. In addition, such a pixel portion includes, for example, pixel switching TFTs that connect pixel electrodes and gates to scanning lines and selectively supply pixel signals supplied from data lines to the pixel electrodes in accordance with scanning signals supplied from the scanning lines.

In the electro-optical device of the present invention, particularly the first substrate has an extension portion extending from the second substrate in plan view on its first side, and a plurality of external circuit connections are arranged along the first side on the extension portion. terminals. In addition, the data line driving circuit is also arranged along the first side, for example, on the protruding portion. Furthermore, the image signal line has a first wiring portion that is wired along the first side between the data line driving circuit and the pixel region in plan view on the first substrate. For example, a plurality of such image signal lines are wired in parallel or in parallel according to serial-parallel conversion. However, one first wiring portion may be used. Furthermore, in such an image signal line, the first wiring portion is at least partially wired in the sealing region where the sealing material is arranged. Therefore, compared with the case where such a first wiring portion is arranged on the side farther from the pixel region than the sealing region, the overhang can be made smaller. In other words, the planar shapes of the first and second substrates are made close to the same for the protruding portion where the external circuit connection terminals are arranged, that is, the size of the first substrate can be relatively reduced.

As a result, according to the electro-optical device of the present invention, the peripheral area of the electro-optical device can be narrowed relative to the pixel area, and the electro-optical device can be miniaturized without narrowing the pixel area. And, especially if such a structure is adopted, in the common manufacturing process of forming a plurality of electro-optical devices on a mother substrate of a plurality of first substrates and then cutting to form each electro-optical device, more can be formed in the same area. Electro-optical device. When arranging a few or a dozen or tens of electro-optical devices on the same motherboard for manufacturing, for example, even if the size of the first substrate is slightly reduced by a few tenths of a millimeter or a few millimeters, the same motherboard can be used. The electro-optic device is formed with one or more columns, or one or more rows. Therefore, even a slight reduction in the size of the first substrate in this way is extremely beneficial in practical use, and the effect can be said to be enormous.

In one aspect of the electro-optical device according to the present invention, the image signal is a plurality of image signals subjected to serial-parallel conversion, the first wiring portion is a plurality of wirings for supplying the plurality of image signals, and the plurality of first wiring portions 1. Each of the wiring parts is arranged in the above-mentioned sealing area.

In this manner, at the time of this operation, a plurality of serial-parallel developed image signals can be simultaneously supplied via a plurality of image signal lines. In particular, since the plurality of first wiring portions are respectively arranged in the sealing area, the first substrate can be further miniaturized by utilizing the area on the first substrate more effectively. For example, an image signal is a plurality of image signals that are serially-parallel developed, and an image signal line is a plurality of image signal lines for supplying a plurality of image signals. For example, image signals expanded to an appropriate number m such as 3, 6, 9, 12, 24, 48, 96, . . . are supplied from m image signal lines. Therefore, as the number m increases, the effect of effectively utilizing the area on the first substrate can be exhibited more remarkably.

In addition, when the first wiring portion is opposed to the opposing substrate as in the present invention, the image signal is affected by the capacitance between the first wiring portion L1 and the sealing material or the opposing substrate via the sealing material. . And, when there are a plurality of image signal lines in this way, that is, when there are a plurality of first wiring portions, when the forming method of capacitance between the plurality of first wiring portions L1 and the counter substrate 20 is changed, There is a possibility that display unevenness is generated for each series of image signals. However, according to this aspect, display unevenness can be reduced by making each of these plurality of first wiring portions enter the sealing region.

Alternatively, in another aspect of the electro-optical device of the present invention, a plurality of image signals are serial-parallel converted, the first wiring portion is a plurality of first wiring portions for supplying the plurality of image signals, and the plurality of The respective areas of the portions of the first wiring portions arranged so as to exist in the sealing region are equal to each other.

In this manner, during operation, a plurality of serial-to-parallel converted image signals are simultaneously supplied via a plurality of image signal lines. In particular, since the plurality of first wiring portions are at least partially arranged in the sealing area, the first substrate can be further miniaturized by utilizing the area on the first substrate more effectively. For example, the greater the number m of serial-parallel deployment, the more remarkably the effect of effectively utilizing the region on the first substrate of the present invention can be exerted.

In addition, when the first wiring portion faces the sealing material or the opposing substrate via the sealing material as in the present invention, the capacitance between these first wiring portions and the sealing material or the opposing substrate via the sealing material As a result, the image signal is affected. Moreover, when there are a plurality of image signal lines in this way, that is, when there are a plurality of first wiring parts, when the formation method of the capacitance between the plurality of first wiring parts and the opposite substrate is changed, there is a possibility that an image signal may be generated. Each of the series shows the likelihood of inhomogeneity. However, according to this aspect, display unevenness can be reduced by arranging the plurality of first wiring portions so that the respective areas of the portions existing in the sealing region become equal to each other. In addition, "the respective areas are equal to each other" or "the areas are equal to each other" as used herein means that the areas are preferably the same in design, and the difference is within the range of manufacturing errors. However, in practice, it means that it is only necessary to make them equal to the extent that the formation of the capacitance described above does not cause practical problems such as display unevenness. Therefore, this range is determined according to performance or device specifications required for each electro-optical device. Therefore, the range of "each area being equal to each other" referred to here may be specifically set for each electro-optical device by experiment, experience, simulation, or the like.

Another aspect of the electro-optical device according to the present invention is characterized in that the image signal line further has a lead-out wiring portion drawn from the first wiring portion toward the pixel area side, and the lead-out wiring portion is at least partially disposed on the sealing surface. within the area.

In this way, in the image signal line, both the first wiring portion along the first side of the substrate and the lead-out wiring portion drawn toward the side of these pixel regions, for example, in a direction intersecting the first side are at least partially are configured in sealed areas. Therefore, the size of the first substrate can be further reduced by further effectively utilizing the area on the first substrate.

In still another aspect of the electro-optical device of the present invention, the second substrate is provided with a portion formed so as to face the pixel electrodes each of the plurality of pixel portions in common and connected to the first wiring portion. Counter electrode notched in the opposite area.

In this way, by generating a vertical electric field between the plurality of pixel electrodes and their common counter electrode, the electro-optical substance can be driven by the vertical electric field on a pixel-by-pixel basis. In this form, in particular, since such a counter electrode is notched in the region facing the first wiring portion, it is possible to arrange the opposite electrode substantially with the gap between the substrates, that is, to construct the capacitive structure when not notched. It is sufficient that the first wiring portion and the counter electrode do not actually face each other. Therefore, it is possible to effectively prevent the image signal from being affected by the potential of the counter electrode or the potential of the counter electrode from being affected by the image signal due to the capacitance between the video signal line and the counter electrode. As a result, higher-quality image display can be performed.

In the aspect related to the counter electrode, the above-mentioned image signal may be a plurality of image signals subjected to serial-parallel conversion, and the above-mentioned first wiring portion may be a plurality of first wirings for supplying the plurality of image signals. In some parts, the counter electrode is notched so that the areas facing the plurality of first wiring parts do not partially face each other and the areas of parts facing the plurality of first wiring parts become equal to each other.

According to this configuration, since the plurality of first wiring portions partially face the opposing electrode, the image signal is affected by the potential of the opposing electrode due to the capacitance between the first wiring portion and the opposing electrode, or the opposing electrode The potential is affected by the image signal. However, since there is almost no difference in the capacitance of different series related to a plurality of image signals that are serially-parallel developed, display unevenness for each series of image signals can hardly occur. As a result, high-quality image display can be realized without extremely retreating the counter electrode. In addition, "the respective areas are equal to each other" or "the areas are equal to each other" as used herein means that the areas are preferably the same in design, and the difference is within the range of manufacturing errors. However, in practice, it means that it is only necessary to make them equal to the extent that the formation of the capacitance described above does not cause practical problems such as display unevenness. Therefore, this range is determined according to performance or device specifications required for each electro-optical device. Therefore, the range of "the respective areas are made equal" referred to here may be specifically set for each electro-optical device by experiments, experiences, simulations, and the like.

In an aspect related to the counter electrode, the above-mentioned first substrate is further provided with vertical conduction terminals for supplying the counter electrode potential to the above-mentioned counter electrode; Extending to the area opposite to the above-mentioned vertical conduction terminal; between the above-mentioned first and second substrates, there is further provided a vertical conduction material for electrically connecting the above-mentioned vertical conduction terminal and the extended part of the above-mentioned opposite electrode to each other.

If constituted in this way, the positions of the up and down conductive terminals are arranged at one end of the first side of the second substrate at least along the first side of the first substrate among the four corners of the same conventional second substrate or Vertical conduction between the vertical conduction terminal and the counter electrode can be obtained by the vertical conduction material and the extended part of the counter electrode at the two corners of both ends. In addition, such vertical conduction terminals are connected to, for example, wiring for supplying the counter electrode potential from the external circuit connection terminal among the routing wirings.

In another form of the electro-optical device of the present invention, a spacer material for defining an inter-substrate space between the above-mentioned first and second substrates is mixed into the above-mentioned sealing material; The film on the upper layer side of the first wiring portion was planarized.

In this way, the space between the substrates can be controlled by the bead-like or fibrous spacer mixed into the sealing material. In this case, it is not necessary to mix a spacer in the electro-optic substance such as liquid crystal, and it is also not necessary to form a shell-shaped spacer in the image region. In addition, since the film arranged on the upper layer side of the first wiring portion is planarized, it is similar to the case of controlling the inter-substrate interval in a state where unevenness due to the presence of image signal lines exists on the surface of the first substrate. In contrast, using a spacer material can control the space between substrates with high precision. Here, the film on the upper layer side is planarized by CMP (Chemical Mechanical Polishing) treatment or reflow of heat treatment. Alternatively, the film on the upper layer side can also be formed by a spin coating method. Furthermore, instead of these or in addition, a concave portion may be formed on the film disposed on the lower layer side or the substrate body of the first substrate, and the first wiring portion may be at least partially embedded or sunk, and implemented on the upper layer side film. Flattening.

In this aspect, the above-mentioned first substrate may be further provided with a circuit for sampling the image signal supplied through the image signal line based on the sampling circuit drive signal supplied from the data line drive circuit and supplying the signal to the data line. The sampling circuit; wherein, the data line driving circuit is arranged in the peripheral region on a side farther from the pixel region than the sealing region; the sampling circuit is arranged in the peripheral region The area is closer to the side of the above-mentioned pixel area.

With this configuration, during operation, by supplying the sampling circuit driving signal from the data line driving circuit to the sampling circuit via the sampling circuit driving signal line, and simultaneously supplying the image signal to the sampling circuit via the image signal line, it is possible to operate at a specified time. The supply of image signals to the data lines is performed at regular intervals, thereby realizing active matrix driving by high-frequency driving. Wherein, especially since the data line driving circuit is arranged in a region farther than the sealing area, and the sampling circuit is arranged in a side closer to the sealing area, when bonding the first and second substrates in the manufacturing process, the use of The compressive force exerted by the sealing material can prevent damage to circuit elements such as TFTs constituting the data line driving circuit or TFTs constituting the sampling circuit. Therefore, it is very advantageous practically.

In order to solve the above-mentioned problems, an electronic device of the present invention includes the above-mentioned electro-optical device of the present invention (including various aspects thereof).

The electronic equipment of the present invention is equipped with the above-mentioned electro-optical device of the present invention, so it can realize a television, a mobile phone, an electronic notepad, a word processor, a viewfinder type or a monitor direct-viewing video tape that can display high-quality images. Devices such as video recorders, workstations, TV phones, POS terminals, touch panels, and various electronic equipment such as image forming devices such as printers, copiers, and facsimile machines that use electro-optical devices as exposure heads can be realized.

In order to solve the above-mentioned problems, the manufacturing method of the electro-optical device of the present invention is to manufacture and bond a pair of the 1st and the 2nd substrate and constitute, and the above-mentioned 1st substrate has a plane view protruding from the above-mentioned 2nd substrate on its 1st side. The electro-optic device manufacturing method of the electro-optical device of the protruding part includes: a forming step, the forming step is to form on the first substrate: a plurality of pixel parts arranged on the pixel area and each having a pixel electrode; In the peripheral region of the periphery of the region, the scanning line driving circuit for driving the pixel portion by scanning lines arranged along at least one second side adjacent to the first side of the first substrate, in the peripheral region a data line drive circuit arranged along the first side for driving the pixel portion via a data line, and a plurality of external circuits arranged along the first side in a region located on the protruding portion in the peripheral region The connection terminal and the first wiring part including the wiring along the first side between the data line driving circuit and the pixel region in plan view on the first substrate led from the plurality of external circuit connection terminals a plurality of routing wirings of image signal lines; and a bonding step of bonding the first and second substrates to each other with a sealing material in a sealing region along the periphery of the pixel region in the peripheral region; In the forming step, the first wiring portion is at least partially formed in the sealing region.

According to the manufacturing method of the electro-optical device of the present invention, the above-mentioned electro-optical device of the present invention can be manufactured relatively easily. In addition, the method of manufacturing the electro-optical device of the present invention can adopt various forms corresponding to the various forms of the electro-optical device of the present invention described above.

Such effects and other benefits of the present invention will be clarified by the examples described below.

Description of drawings

FIG. 1 is a plan view showing the overall structure of an electro-optical device according to Embodiment 1 of the present invention.

Fig. 2 is a H-H' sectional view of Fig. 1 .

FIG. 3 is an enlarged partial plan view showing a region indicated by L12 in FIG. 1 .

4 is a circuit diagram showing an outline of a circuit configuration related to a data line driving circuit and a sampling circuit in Embodiment 1 together with routing wiring.

5 is a circuit diagram showing an outline of the circuit configuration of the pixel circuit and the counter electrode to which the counter electrode potential is supplied from the upper and lower conduction terminals according to the first embodiment.

FIG. 6 is a partial plan view of the same form as FIG. 3 in a comparative example of Embodiment 1. FIG.

FIG. 7 is a plan view of the same form as FIG. 3 in Embodiment 2. FIG.

Fig. 8 is a sectional view taken along line A-A' of Fig. 7 .

Fig. 9 is a plan view of the same form as Fig. 7 in the modified example.

FIG. 10 is a flowchart showing a method of manufacturing the liquid crystal device of this embodiment.

11 is a plan view showing the structure of a projector as an example of electronic equipment to which an electro-optical device is applied.

12 is a perspective view showing the configuration of a personal computer as an example of electronic equipment to which the electro-optic device is applied.

13 is a perspective view showing the structure of a mobile phone as an example of electronic equipment to which an electro-optical device is applied.

Mark description

9a-pixel electrode, 3a-scanning line, 6a-data line, 10-TFT array substrate, 10a-pixel display area, 10e-extending part, 20-opposing substrate, 21-opposing electrode, 21e-opposing electrode Extension part, 23-shading film, 30-TFT for pixel switch, 50-liquid crystal layer, 52-sealing material, 52a-sealing area, 53-frame light-shielding film, 71-leading wiring for counter electrode, 101-data line Drive circuit, 102, 102a, 102b, 102c-external circuit connection terminal, 104-scanning line drive circuit, 106-upper and lower conduction terminal, 107-upper and lower conduction material, 115-image signal line, 116-exit wiring part, 117 -sampling circuit driving signal line, 118-wiring for scanning line driving circuit, 301-sampling circuit, 302-sampling switch, L1-first wiring part, LCCOM-opposite electrode potential, R1, R2-notch part, VID1～VID6 - Image signal.

Detailed ways

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, a TFT active matrix driving type liquid crystal device with a built-in driver circuit as an example of the electro-optical device of the present invention is taken as an example.

Example 1.

The liquid crystal device of Example 1 will be described with reference to FIGS. 1 to 8 .

First, the overall structure of the liquid crystal device of this embodiment will be described with reference to FIGS. 1 and 2 . 1 is a plan view showing the structure of the liquid crystal device of this embodiment, and FIG. 2 is a sectional view taken along line H-H' of FIG. 1 .

In FIGS. 1 and 2 , in the liquid crystal device of the present embodiment, the TFT array substrate 10 is arranged opposite to the counter substrate 20 . A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the opposite substrate 20, and the TFT array substrate 10 and the opposite substrate 20 are sealed by a sealing region 52a provided around the pixel region (hereinafter referred to as the pixel display region) 10a. Materials 52 adhere to each other.

In FIG. 1 , a light-shielding frame light-shielding film 53 for defining a frame region of the image display region 10 a is provided on the counter substrate 20 side in parallel with the inner side of the sealing region 52 a where the sealing material 52 is disposed. In the peripheral area, a data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in an area outside the sealing area 52 a where the sealing material 52 is disposed. The sampling circuit 301 is covered with the frame light-shielding film 53 inside the sealing region 52a along this one side. In addition, the scanning line driving circuit 104 is covered with the frame light-shielding film 53 inside the sealing region 52a along the two sides adjacent to the one side. Further, in order to connect the two scanning line driving circuits 104 disposed on both sides of the image display area 10a in this way, a side shielding film 53 is provided along the remaining side of the TFT array substrate 10 and covered with the frame light-shielding film 53. A plurality of wires 105 . In addition, on the TFT array substrate 10 , vertical conductive terminals 106 for connecting the two substrates with a vertical conductive material 107 are arranged in regions facing the four corners of the counter substrate 20 . This enables electrical conduction between the TFT array substrate 10 and the counter substrate 20 .

In FIG. 2, on the TFT array substrate 10, a TFT (Thin Film Transistor) for pixel switching as a driving element or a stacked structure in which wiring such as scanning lines and data lines are formed is formed. In the image display region 10a, a pixel electrode 9a is provided in an upper layer of the pixel switching TFT or wiring such as a scanning line and a data line. On the other hand, a light shielding film 23 is formed on a surface of the counter substrate 20 facing the TFT array substrate 10 . Further, a counter electrode 21 made of a transparent material such as ITO is formed on the light shielding film 23 to face the plurality of pixel electrodes 9 a.

The details of the planar layout of the data line drive circuit and the image signal lines routed from the external circuit connection terminals will be described below with reference to FIGS. 3 to 5 . 3 is an enlarged partial plan view of the circular area L12 in FIG. 1 in the liquid crystal device of this embodiment. 4 is a circuit diagram showing an outline of a circuit configuration related to a data line driving circuit and a sampling circuit together with routing wiring. 5 is a circuit diagram schematically showing a circuit configuration related to a counter electrode to which a counter electrode potential is supplied from a vertical conduction terminal and a pixel circuit.

As shown in FIG. 3, in this embodiment, in particular, the TFT array substrate 10 has on its first side (the lower side in FIG. 3 ) an extension 10e extending from the opposite substrate 20 in plan view. The region on the output portion 10e is provided with a plurality of external circuit connection terminals 102 along the first side. The plurality of external circuit connection terminals 102 include an image signal terminal 102a for supplying an image signal; a clock signal, an inverted clock signal, a start pulse signal, a scanning direction control signal, a power signal, And the terminal 102b for the scanning line driving circuit of various signals such as other special control signals; In addition, the plurality of external circuit connection terminals 102 include various components for supplying the data line driving circuit 101 with a clock signal, an inverted clock signal, a start pulse signal, a scanning direction control signal, a power signal, and other special control signals. A terminal for a data line driving circuit, a terminal for inspection, etc., which are not shown in the figures, are used for various signals.

The scanning line driving circuit 104 is arranged along the second side (left side in FIG. 3 ), and the scanning line driving circuit lead 118 is routed from the scanning line driving circuit terminal 102 b to the scanning line driving circuit 104 .

The counter electrode lead wire 71 is drawn from the counter electrode terminal 102c to the vertical conduction terminal 106, and further, is drawn to the other vertical conduction terminal 106 along the second side.

The data line driving circuit 101 is arranged along the first side, and the routing wiring for the data line driving circuit is led to the data line driving circuit 101 from a terminal for the data line driving circuit (not shown).

From the terminal 102 a for image signal, the image signal line 115 is routed around the periphery of the data line drive circuit 101 . The lead-out wiring portion 116 is wired from the image signal line 115 to the sampling circuit 301 . On the other hand, the sampling circuit driving signal line 117 is wired from the data line driving circuit 101 to the sampling circuit 301 .

The circuit structure or the electrical connection relationship generated by routing wiring and the like related to these data line driving circuit 101 and sampling circuit 301 is shown in FIG. 4 .

That is, as shown in FIG. 4 , the branch wiring 116 from the image signal line 115 is connected to the source of the sampling switch 302 composed of TFT or the like constituting the sampling circuit 301, and the sampling circuit driving signal line 117 from the data line driving circuit 101 is connected to the source of the sampling switch 302. Gate connection of sampling switch 302 . Therefore, when the electro-optic device is in operation, an image signal applied from an external circuit to the image signal terminal 102 a is supplied to the sampling circuit 301 via the branch wiring 116 from the image signal line 115 . Among them, the image signals supplied to the sampling circuit 301 are supplied to the sampling circuit 301 in parallel or in parallel for each set of six data lines 6 a as six-phase serial-parallel developed image signals VID1 to VID6 . Then, the image signal is sampled at a timing corresponding to the sampling circuit driving signal based on the output of the shift register supplied from the data line driving circuit 101 via the sampling circuit driving signal line 117 . At this time, since the image signals VID1-VID6 are 6-phase serial-to-parallel converted image signals, the data line driving circuit 101 divides the sampling circuit driving signals into 6 paths at the final stage respectively, and for the 6 data lines 6a The groups of 6 sampling switches 302 corresponding to the groups of are simultaneously supplied. Then, image signals sampled simultaneously in groups of six data lines 6a are supplied to the respective data lines 6a.

In addition, during such an operation, the counter electrode potential LCCOM applied to the counter electrode terminal 102 c from an external circuit is supplied to the counter electrode 21 via the counter electrode lead wire 71 and the vertical conduction terminal 106 .

As shown in FIG. 5 , as described above, the counter electrode 21 supplied with the counter electrode potential LCCOM is disposed opposite to the pixel electrode 9 a with the liquid crystal layer 50 interposed therebetween to form a liquid crystal capacitor 50 a. Among them, each pixel portion has a pixel switching TFT 30 whose source is connected to the data line 6 a supplied with an image signal as described above. The scanning line 3 a supplied with the scanning signal from the scanning line driving circuit 104 (see FIGS. 1 to 3 ) is connected to the gate of the TFT 30 . Therefore, when the scanning signal is supplied via the scanning line 3 a, by turning on the TFT 30 , an image signal is written to the pixel electrode 9 a via the data line 6 a and between the source and drain of the TFT 30 . In addition, the storage capacitor 70 is constructed in parallel with the liquid crystal capacitor 50 a in order to improve the potential retention characteristics in the liquid crystal capacitor 50 a.

Such a storage capacitor 70 is constructed by arranging a part of the capacitor line 300 supplying a predetermined potential or a fixed-potential-side capacitor electrode connected thereto and a pixel-potential-side capacitor electrode connected to the pixel electrode 9a to face each other with a dielectric film interposed therebetween.

Due to such a configuration, the liquid crystal device of this embodiment supplies scanning signals to the pixel portion via the scanning line 3 a by the scanning line driving circuit 104 and supplies an image to the pixel portion via the data line 6 a by the data line driving circuit 101 during its operation. signal, thereby performing active matrix driving in each pixel.

Returning to FIG. 3, in this embodiment, particularly, the TFT array substrate 10 has an extension 10e extending from the opposite substrate 20 in plan view on its first side (lower side in FIG. 3 ). On 10e, a plurality of external circuit connection terminals 102 are arranged along the first side. In addition, even the data line driving circuit 101 is arranged along the first side, and is arranged on the extended portion 10e. Furthermore, the image signal line 115 has a first wiring portion L1 that is wired along a first side between the data line driving circuit 101 and the image display region 10 a in plan view on the TFT array substrate 10 . The image signal lines 115 are wired in parallel or in parallel according to serial-parallel expansion. However, there may be one first wiring portion L1. Furthermore, the first wiring portion L1 in the image signal line 115 is at least partially wired in the sealing region 52 a where the sealing material 52 is disposed.

Here, by comparing with the comparative example of the present embodiment shown in FIG. 6 , the effects of the present embodiment configured as described above will be studied. Among them, FIG. 6 is a partial plan view of the same form as FIG. 3 in the comparative example of the present embodiment.

In the comparative example shown in FIG. 6 , the first wiring portion L1 of the image signal line 115 is arranged on the side farther from the image display region 10 a than the sealing region 52 a on which the sealing material 52 is arranged. In other words, the first wiring portion L1 is not arranged in the sealing region 52a. The other structures are roughly the same as the embodiment shown in FIG. 3 . Therefore, in the comparative example, the planar shapes of the TFT array substrate 10 and the counter substrate 20 cannot be made close to each other for the protruding portion 10e, that is, the size of the TFT array substrate 10 cannot be relatively reduced.

In the liquid crystal device of the present embodiment shown in FIG. 3 , the width of the TFT array substrate 10 can be narrowed by just ΔW compared to the comparative example in FIG. In other words, the planar shapes of the TFT array substrate 10 and the counter substrate 20 can be made close to each other for the protruding portion 10e where the external circuit connection terminals 102 are arranged, that is, the size of the TFT array substrate 10 can be relatively reduced.

As a result, according to this embodiment, the peripheral area of the liquid crystal device can be narrowed relative to the image display area 10a, and the liquid crystal device can be miniaturized without narrowing the image display area 10a. And, especially according to such a structure, in the common manufacturing process of forming a plurality of liquid crystal devices on a mother substrate that becomes a plurality of TFT array substrates 10 and cutting to form each electro-optical device, more TFT array substrates can be formed in the same area. LCD device. When arranging several pieces, or a dozen pieces, or dozens of pieces of this liquid crystal device on the same mother substrate is manufactured, even if the size of the TFT array substrate is slightly reduced by a few tenths of a millimeter or a few millimeters, for example, it can be produced on the same motherboard. One or more columns, or one or more rows are formed on the motherboard to form the liquid crystal device. Therefore, although the size of the TFT array substrate 10 is slightly reduced in this way, it is extremely beneficial in practical applications, and the effect can be said to be huge.

In Fig. 3 and Fig. 4, in this embodiment, the image signals are six image signals VID1-VID6 converted in series-parallel, and the six first wiring parts L1 for supplying the six image signals VID1-VID6 are respectively It is arranged in the sealing area 52a.

Therefore, during its operation, six serial-to-parallel converted video signals VID1 to VID6 are simultaneously supplied via the six video signal lines 115 . In particular, since the six first wiring portions L1 are respectively arranged in the sealing region 52a, the TFT array substrate 10 can be further miniaturized by further effectively utilizing the region on the TFT array substrate 10 .

In particular, in the comparative example of FIG. 6, only the phase expansion number is set to 6, that is, only 6 image signal lines are arranged in parallel. However, in practice, there are, for example, phase expansion numbers of 9, 12, 24, 48, 96, ..., etc., that is, image signal lines of 9, 12, 24, 48, 96 ... etc. are arranged in parallel. Case. Therefore, the planar area occupied by the plurality of image signal lines arranged between the sealing area and the data line driving circuit becomes unnegligibly larger than the planar area occupied by the data line driving circuit and the like. That is, the structure of the present example is more advantageous than the comparative example as the phase expansion number is larger.

In addition, as in this embodiment, when the first wiring portion L1 faces the opposing substrate 20, due to the effect of capacitance between the first wiring portion L1 and the sealing material 52 or the opposing substrate 20 via the sealing material 52, The image signals VID1-VID6 are affected. Furthermore, when there are a plurality of image signal lines 115 in this way, that is, there are a plurality of first wiring portions L1, when the formation method of the capacitance between the plurality of first wiring portions L1 and the counter substrate 20 is changed, the There is a possibility that display unevenness will occur for each series of image signals VID1 to VID6. However, according to the present embodiment, each of the plurality of first wiring portions L1 enters the sealing region 52a, that is, by forming capacitance between the plurality of first wiring portions L1 and the counter substrate 20, the wirings are connected to each other. approach, display unevenness can be reduced.

More preferably, the six first wiring portions L1 are arranged so that the respective areas of the portions existing in the sealing region 52a become equal to each other. With this configuration, it is possible to reduce display unevenness for each series of image signals VID1 to VID6 due to a change in the form of capacitance between the plurality of first wiring portions L1 and the counter substrate 20 . In addition, the range of "the respective areas are equal to each other" referred to here may be specifically set for each liquid crystal device based on experiments, experiences, simulations, and the like.

In the present embodiment, the image signal line 115 further has a lead-out wiring portion 116 corresponding to the data line 6 a from the first wiring L1 toward the image display region 10 a side. In addition, in the image signal line 115, both the first wiring portion L1 along the first side of the TFT array substrate 10 and the lead-out wiring portion 116 drawn from there toward the side of the image display region 10a in a direction intersecting the first side , at least partially disposed within the sealing area 52a. Therefore, the TFT array substrate 10 can be further miniaturized by further effectively utilizing the area on the TFT array substrate 10 .

In addition, such an extraction wiring portion 116 is extracted from the first wiring portion L1 to the sampling circuit 301 . Therefore, also in this case, the sampling circuit driving signal line 117 is arranged in parallel with the lead-out wiring portion 116 at least partially within the sealing region 52 a.

Returning to FIG. 3 again, in this embodiment, a spacer material used to define the space between the substrates between the TFT array substrate 10 and the opposite substrate 20 is mixed in the sealing material 52. On the TFT array substrate 10, for the configuration The film on the upper layer side of the first wiring portion L1 was planarized.

Therefore, the space between the substrates can be controlled by the bead-shaped or fibrous spacer mixed into the sealing material 52 . In this case, it is not necessary to mix a spacer in the liquid crystal, and it is also not necessary to form a shell-shaped spacer in the image region 10a. Furthermore, since the film disposed on the upper layer side of the first wiring portion L1 is planarized, there is a gap between the control substrate and the control substrate in a state where unevenness due to the presence of the image signal line 115 exists on the surface of the TFT array substrate 10 . Compared with the case of the spacer, the spacer material can control the space between the substrates with high precision. In addition, by flattening the substrate surface in this way, the image signal line 115 or the lead-out wiring portion 116 that is wired in the sealing area 52a can be reduced due to the presence of unevenness on the substrate surface during, for example, the bonding process of both substrates. There is a possibility of disconnection or short circuit at the place where the pressure is concentrated.

Here, the film on the upper layer side is planarized by CMP (Chemical Mechanical Polishing) treatment or reflow of heat treatment. Alternatively, the film on the upper layer side can also be formed by a spin coating method. Furthermore, instead of them or in addition, a concave portion may be formed on the film disposed on the lower layer side or the substrate body of the TFT array substrate 10, and by at least partially burying or sinking the first wiring portion L1, the upper layer side The film is planarized.

In FIG. 3 , in the present embodiment, on the TFT array substrate 10, there is also a sampling circuit driving signal supplied from the data line driving circuit 101 to sample and supply the image signals VID1 to VID6 supplied via the image signal line 115 and supply them to the TFT array substrate 10. The sampling circuit 301 to the data line 6a, the data line driving circuit 101, is disposed in the peripheral area on a side farther from the image display area 10a than the sealing area 52a, and the sampling circuit 301 is disposed in the peripheral area on a side farther than the sealing area 52a. 52a is closer to the side of the image display area 10a.

Therefore, at the time of its operation, by supplying the sampling circuit driving signal from the data line driving circuit 101 to the sampling circuit 301 through the sampling circuit driving signal line 117, and supplying the image signals VID1 to VID6 to the sampling circuit 301 through the image signal line 115, The supply of the image signals VID1 to VID6 to the data lines 6 a can be performed at a predetermined timing, and active matrix driving using high-frequency driving can be performed. In particular, since the data line driving circuit 101 is arranged on the side farther than the sealing region 52a, and the sampling circuit 301 is arranged on the side closer to the sealing region 52a, the bonding of the TFT array substrate 10 in the manufacturing process And when facing the substrate 20, the compressive force acting on the sealing material 52 can prevent damage to circuit elements such as TFTs constituting the data line driving circuit 101 or circuit elements such as TFTs constituting the sampling circuit 301. Not yet. Therefore, it is very advantageous practically.

In addition, a frame light-shielding film 53 defining the frame of the image display region 10 a is further provided on the counter substrate 20 , and the sampling circuit 301 is at least partially arranged in the frame region where the frame light-shielding film 53 is formed in the peripheral region. Therefore, a region where the sampling circuit 301 is formed can be ensured by the frame region located inside the sealing region 52a. Therefore, it is possible to effectively prevent the phenomenon that the image display area 10a becomes smaller due to the presence of the sampling circuit 301 disposed inside the sealing area 52a. In addition, such a frame light-shielding film may be arranged on at least one of the TFT array substrate 10 and the counter substrate 20 .

Example 2.

Next, the liquid crystal device of Example 2 will be described with reference to FIGS. 7 and 8 . Among them, FIG. 7 is a plan view of the same form as FIG. 3 in the second embodiment. Fig. 8 is a sectional view taken along line A-A' of Fig. 7 . In addition, in FIG. 7 and FIG. 8, the same reference numerals are assigned to the same components as those related to the first embodiment shown in FIG. 3, and their descriptions are appropriately omitted.

In FIG. 7 and FIG. 8, in the liquid crystal device of this embodiment, the counter electrode 21 is formed on the counter substrate 20 so as to face the pixel electrodes 9a (see FIG. The notch portion R1 in the region facing the first wiring portion L1 is notched.

The first wiring portion L1 is formed on the first interlayer insulating film 41 on the TFT array substrate 10 . A second interlayer insulating film 42 is formed thereon.

According to this embodiment, the liquid crystal is driven by the vertical electric field for each pixel by generating a vertical electric field between the plurality of pixel electrodes 9a (see FIG. 2 ) and their common counter electrode 21 . In the present embodiment, since such counter electrode 21 is notched in the notch portion R1 in the region facing the first wiring portion L1, it can be arranged opposite to each other substantially with the inter-substrate interval therebetween when not notched. That is, the first wiring portion L1 capable of constructing a capacitive structure does not actually face the counter electrode 21 . Therefore, it is possible to effectively prevent the image signals VID1 - VID6 from being affected by the potential of the opposing electrode or the potential of the opposing electrode from being affected by the image signals VID1 - VID6 due to the capacitance between the image signal line 115 and the opposing electrode 21 . As a result, higher-quality image display can be performed.

In addition, in this embodiment, it is preferable that the counter electrode 21 is notched so as not to face at all in a region facing the first wiring portion L1. Alternatively, the cutout portion R1 may be enlarged so that a portion of the counter electrode 21 closest to the first wiring portion L1 in a planar view is set back by an appropriate distance from the first wiring portion L1.

That is, when the notch portion R1 is formed, for example, in the counter electrode 21 formed on substantially the entire surface of the counter substrate 20, only a rectangular region facing the first wiring portion L1 is notched, leaving the area connected to the pixel. The region facing the electrode 9 a and the region facing the vertical conduction terminal 106 are sufficient.

In FIG. 7 , in this embodiment, the TFT array substrate 10 is further provided with vertical conduction terminals 106 for supplying the counter electrode potential to the counter electrode 21 . The opposing electrode 21 has an opposing electrode extension portion 21 e extending to a region facing the vertical conduction terminal 106 on the side of the cutout portion R1 . Between the TFT array substrate 10 and the counter substrate 20 , a vertical conduction material 107 for electrically connecting the vertical conduction terminal 106 and the counter electrode extension 21 e of the counter electrode 21 may be further provided.

According to this structure, the positions of the vertical conduction terminals 106 are provided on at least the first side of the counter substrate 20 along the first side of the TFT array substrate 10 among the four corners of the counter substrate 20 similar to conventional ones. The vertical conduction between the vertical conduction terminal 106 and the opposite electrode 21 can be obtained through the vertical conduction material 107 and the opposite electrode extension part 21e in the opposite electrode 20 . In addition, such vertical conduction terminals 106 are connected to counter-electrode lead wires 71 for supplying counter-electrode potentials from the external circuit connection terminals 102 .

Variations.

As a modification, for example, as shown in FIG. 9 , the opposite electrode 21 may also be made so that the parts facing the plurality of first wiring parts L1 are not partially opposed to each other and the areas of the parts facing the plurality of first wiring parts L1 are mutually opposed to each other. Become an equal way cut notch part R2. Among them, FIG. 9 is a diagram in the same form as FIG. 7 in a modified example. In addition, in FIG. 9 , the same reference numerals are attached to the same components as those of the first embodiment shown in FIG. 3 , and their descriptions are appropriately omitted.

If this is done, since the plurality of first wiring portions L1 partially face the opposing electrode 21, the image signals VID1 to VID6 are affected by the potential of the opposing electrode due to the capacitance between the first wiring portions L1 and the opposing electrode 21. Influence or cause the counter electrode potential to be affected by the image signals VID1 to VID6. However, since there is almost no difference in capacitance between series of the serial-parallel developed plurality of image signals VID1 to VID6 , display unevenness for each series of image signals hardly occurs. As a result, high-quality image display can be realized without extremely retreating the counter electrode 21 . In addition, what is necessary is just to specifically set the range of "each area being equal to each other" here for each liquid crystal device through experiment, experience, simulation, etc. specifically.

Example 3.

Next, a method of manufacturing the liquid crystal device of Example 3 will be described with reference to FIGS. 2 , 3 and 10 . FIG. 10 is a flowchart showing a method of manufacturing the liquid crystal device of this embodiment.

As shown in FIG. 10, according to the manufacturing method of the liquid crystal device of this embodiment, firstly, in the forming process (step S10), for the TFT array substrate 10, a process including film forming process, pattern forming process, impurity doping process, high temperature processing, etc., to form peripheral circuits including the pixel portion, data line driving circuit 101, scanning line driving circuit 104, etc.; and routing wiring including external circuit connection terminals 102, image signal lines 115, etc. (step S10a).

At this time, a plurality of pixel units are arranged on the image display area 10a. The scanning line driving circuit 104 for driving the pixel portion via the scanning line 3a is located along at least one side adjacent to the first side (lower side in FIG. 3 ) of the TFT array substrate 10 in the peripheral area located around the pixel display area 10a. Side 2 configuration. The data line driving circuit 101 for driving the pixel portion via the data line 3a is arranged along the first side in the peripheral area. The plurality of external circuit connection terminals 102 are arranged along the first side in a region located on the overhang portion 10e in the peripheral region.

On the other hand, various processes including film formation process, pattern formation process, impurity doping process, high temperature process, etc. The opposite electrode 21 is formed (step S10b).

Then, the liquid crystal layer 50 is sandwiched between the TFT array substrate 10 and the opposite substrate 20 through the bonding process, and the TFT array substrate 10 has an extended portion 10e protruding from the opposite substrate 20 as viewed in plan on its first side. form (step S20).

In particular, in the forming step (step S10a), in the image signal line 115, the first wiring portion L1 is at least partially formed in the sealing region 52a. In addition, by planarizing the surface of the TFT array substrate 10 in the forming process (step S10a), the number of image signal lines 115 routed in the sealing area 52a is reduced in the subsequent bonding process (step S20). There is a possibility of a disconnection or a short circuit in the lead-out wiring portion 116 and the like.

Therefore, according to the manufacturing method of the liquid crystal device of this embodiment, the liquid crystal devices of the above-mentioned embodiments 1 and 2 can be relatively easily manufactured. In addition, in the manufacturing method of the liquid crystal device of this embodiment, various forms corresponding to the various forms of the liquid crystal device of the above-mentioned Examples 1 and 2 can also be adopted.

Electronic equipment.

Next, the application of the above-mentioned liquid crystal device as the electro-optical device to various electronic devices will be described.

First, a projector using the liquid crystal device as a light valve will be described. FIG. 11 is a plan view showing a configuration example of a projector. As shown in FIG. 11 , a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100 . Projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four reflectors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and enters the liquid crystal panel 1110R as light valves corresponding to the respective primary colors. , 1110B and 1110G.

The liquid crystal panels 1110R, 1110B, and 1110G have the same configuration as the liquid crystal devices described above, and are liquid crystal devices driven by primary color signals of R, G, and B supplied from an image signal processing circuit. And, the light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light are refracted by 90 degrees, and G light goes straight. Therefore, as a result of synthesizing the images of the respective colors, the color image is projected onto a screen or the like via the projection lens 1114 .

Here, when focusing on the display images produced by the liquid crystal panels 1110R, 1110B, and 1110G, it is found that the display images produced by the liquid crystal panel 1110G need to be inverted horizontally relative to the display images produced by the liquid crystal panels 1110R and 1110B.

In addition, in the liquid crystal panels 1110R, 1110B, and 1110G, since the light corresponding to each primary color of R, G, and B enters through the dichroic mirror 1108 , it is not necessary to provide a color filter.

Next, an example in which a liquid crystal device is applied to a mobile personal computer will be described. FIG. 12 is a perspective view showing the configuration of the personal computer. In FIG. 12 , a computer 1200 is composed of a main body 1204 including a keyboard 1202 and a liquid crystal display unit 1206 . This liquid crystal display unit 1206 is constituted by adding a backlight to the back of the liquid crystal device 1005 described above.

Furthermore, an example in which a liquid crystal device is applied to a mobile phone will be described. Fig. 13 is a perspective view showing the structure of the mobile phone. In FIG. 13 , a mobile phone 1300 includes a reflective liquid crystal device 1005 together with a plurality of operation keys 1302 . In this reflective liquid crystal device 1005, a headlight is provided in front thereof as necessary.

In addition, in addition to the electronic equipment described with reference to FIGS. , workstations, TV phones, POS terminals, devices with touch panels, etc. And, of course, it can also be applied to these various electronic devices.

In addition, the present invention can be applied to reflective liquid crystal devices (LCOS), plasma displays (PDP), field emission displays (FED, SED), organic EL display, etc.

The present invention is not limited to the above-mentioned embodiments, and can be appropriately changed within the range not violating the gist or concept of the invention read from the claims and the specification as a whole, and the electro-optical device accompanied by such changes, and the electro-optical device having the configuration Electronic equipment and a method of manufacturing the electro-optical device are also included in the technical scope of the present invention.

Claims (11)

1. An electro-optic device, which is formed by bonding a pair of the first and second substrates, and the first substrate has an electro-optic device extending from the second substrate on its first side as viewed in plan , characterized by having: a plurality of pixel portions arranged in a pixel region and each having a pixel electrode on the first substrate; a data line drive circuit for supplying an image signal to the pixel portion arranged along the first side in a peripheral area located around the pixel area; a plurality of external circuit connection terminals arranged along the first side in a region located on the protruding portion in the peripheral region; An image signal having a first wiring portion routed from the plurality of external circuit connection terminals along the periphery of the data line driving circuit and wired in the direction of the first side between the data line driving circuit and the pixel region line; and A sealing material for bonding the first and second substrates to each other in a sealing region along the periphery of the pixel region; Wherein, the first wiring portion is at least partially wired in the sealing area. 2. The electro-optical device according to claim 1, characterized in that: The image signal is a plurality of image signals that have been serial-parallel converted, and the first wiring portion is composed of a plurality of wires for supplying the plurality of image signals, Each of the plurality of first wiring portions is arranged in the sealing region. 3. The electro-optical device according to claim 1, characterized in that: The image signal is a plurality of image signals converted in serial-parallel, the first wiring portion is a plurality of first wiring portions for supplying the plurality of image signals, The plurality of first wiring portions are arranged so that respective areas of portions existing in the sealing region become equal to each other. 4. The electro-optical device according to any one of claims 1 to 3, characterized in that: The image signal line further has a lead-out wiring portion drawn from the first wiring portion toward the pixel region side, The lead wiring portion is at least partially arranged in the sealing area. 5. The electro-optic device according to any one of claims 1 to 3, characterized in that: The second substrate is provided with a counter electrode formed so as to face the pixel electrodes each of the plurality of pixel portions in common and having a cutout in a region facing the first wiring portion. 6. The electro-optic device according to claim 5, characterized in that: The image signal is a plurality of image signals serially-parallel developed, the first wiring portion is a plurality of first wiring portions for supplying the plurality of image signals, The counter electrode is notched such that areas facing the plurality of first wiring portions do not partially face each other and areas of portions facing the plurality of first wiring portions are equal to each other. 7. The electro-optical device according to claim 5, characterized in that: The above-mentioned first substrate is further provided with a vertical conduction terminal for supplying a counter-electrode potential to the above-mentioned counter-electrode; The above-mentioned opposite electrode extends to the area opposite to the above-mentioned upper and lower conducting terminals on the side of the cut-out part; A vertical conduction material is further provided between the first and second substrates to electrically connect the vertical conduction terminal and the extended portion of the counter electrode to each other. 8. The electro-optic device according to any one of claims 1 to 3, characterized in that: A spacer material for defining an inter-substrate interval between the first and second substrates is mixed into the sealing material; On the above-mentioned first substrate, a planarization process was performed on the film arranged on the upper layer side of the above-mentioned first wiring portion. 9. The electro-optical device according to claim 8, characterized in that: The first substrate further includes a sampling circuit for sampling the image signal supplied via the image signal line based on a sampling circuit drive signal supplied from the data line drive circuit and supplying the signal to the data line; Wherein, the above-mentioned data line driving circuit is arranged in an area on a side farther from the above-mentioned pixel area than the above-mentioned sealing area in the above-mentioned peripheral area; The sampling circuit is disposed on a side closer to the pixel region than the sealing region in the peripheral region. 10. An electronic device comprising the electro-optical device according to any one of claims 1 to 9. 11. A method of manufacturing an electro-optical device, which is formed by bonding a pair of the first and second substrates, and the first substrate has a protrusion protruding from the second substrate on its first side in plan view. The electro-optical device manufacturing method of the electro-optical device, characterized in that it includes: a forming step of forming on the first substrate: a plurality of pixel portions arranged on the pixel region and each having a pixel electrode; A scanning line driving circuit arranged on at least one second side adjacent to the first side for driving the pixel portion through the scanning line, and a scanning line driving circuit arranged along the first side in the peripheral region for driving the pixel through the data line part of the data line drive circuit, a plurality of external circuit connection terminals arranged along the first side in the region located on the above-mentioned protruding part in the above-mentioned peripheral region, and a plurality of external circuit connection terminals that are routed from the above-mentioned plurality of external circuit connection terminals. A plurality of routing wirings of the image signal lines of the first wiring portion along the first side wiring between the data line driving circuit and the pixel area viewed from a plan view on the first substrate; and a bonding step of bonding the first and second substrates to each other with a sealing material in the sealing region along the periphery of the pixel region in the peripheral region; In the forming step, the first wiring portion is at least partially formed in the sealing region.

Images