CN100437117C - Composite beam piezoresistive accelerometer - Google Patents
Composite beam piezoresistive accelerometer Download PDFInfo
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- CN100437117C CN100437117C CNB2007100617393A CN200710061739A CN100437117C CN 100437117 C CN100437117 C CN 100437117C CN B2007100617393 A CNB2007100617393 A CN B2007100617393A CN 200710061739 A CN200710061739 A CN 200710061739A CN 100437117 C CN100437117 C CN 100437117C
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Abstract
Description
技术领域 technical field
本发明涉及微机械电子技术,具体是一种复合梁压阻加速度计。The invention relates to micro-mechanical electronic technology, in particular to a composite beam piezoresistive accelerometer.
背景技术 Background technique
加速度计广泛应用于航空、电子、汽车和机械领域的振动和冲击测量。随着微机电MEMS产业的兴起,加速度计逐渐向微型化、集成化方向发展。由于微加速度计具有体积小、质量轻、成本低、功耗低、易批量生产等优点,因此具有广泛的军事和民用前景。其中压阻式加速度计由于具有线性度好、外围电路简单、抗过载能力强等优点而广泛应用于冲击环境的加速度测量。而基于不同冲击环境的测量需求,压阻式加速度计中的高g值加速度计更是受到广泛的关注。Accelerometers are widely used in vibration and shock measurement in aerospace, electronics, automotive and mechanical fields. With the rise of the MEMS industry, accelerometers are gradually developing in the direction of miniaturization and integration. Because the micro accelerometer has the advantages of small size, light weight, low cost, low power consumption, and easy mass production, it has a wide range of military and civilian prospects. Among them, the piezoresistive accelerometer is widely used in the acceleration measurement of the shock environment because of its good linearity, simple peripheral circuit, and strong anti-overload ability. Based on the measurement requirements of different shock environments, high-g accelerometers among piezoresistive accelerometers have received extensive attention.
现有高g值加速度计的结构有悬臂梁结构、固支梁结构和双岛五梁等结构:悬臂梁结构的优点是灵敏度高,但是它的一阶固有频率低,频率响应范围窄,其横向灵敏度较大;固支梁结构,质量块像活塞一样上下运动,它的一阶固有频率比悬臂梁结构高很多,有利于扩大加速度计的频率响应范围,同时能较好地消除非对称结构引起的梁长度方向的横向加速度的影响,但在电桥中应变电阻数量相同的情况下,其灵敏度低于悬臂梁结构;双岛五梁结构,将四个检测用的压敏电阻扩散在中心梁上,两个平行于梁两个垂直于梁,连接形成惠斯通电桥,该结构具有和固支梁结构相同的特点,横向灵敏度较低,频率响应特性介于悬臂梁结构和固支梁结构之间。总之,现有高g值加速度计的结构不能满足一阶固有频率高、频率响应范围宽的特性;另外,抗冲击性能较差,在许多恶劣条件下会出现梁断裂的现象,从而使加速度计失效。The structures of existing high-g-value accelerometers include cantilever beam structure, fixed-support beam structure and double-island five-beam structure. The advantage of the cantilever beam structure is its high sensitivity, but its first-order natural frequency is low and its frequency response range is narrow. Large lateral sensitivity; fixed beam structure, the mass block moves up and down like a piston, its first-order natural frequency is much higher than that of the cantilever beam structure, which is beneficial to expand the frequency response range of the accelerometer, and can better eliminate the asymmetric structure The influence of the lateral acceleration in the direction of the beam length, but in the case of the same number of strain resistances in the bridge, its sensitivity is lower than that of the cantilever beam structure; the double-island five-beam structure spreads four piezoresistors for detection in the center On the beam, two parallel to the beam and two perpendicular to the beam are connected to form a Wheatstone bridge. This structure has the same characteristics as the fixed beam structure, but the lateral sensitivity is low, and the frequency response characteristics are between the cantilever beam structure and the fixed beam structure. between structures. In short, the structure of the existing high-g-value accelerometer cannot meet the characteristics of high first-order natural frequency and wide frequency response range; in addition, the impact resistance is poor, and the phenomenon of beam fracture will occur under many harsh conditions, so that the accelerometer invalidated.
发明内容 Contents of the invention
本发明为了解决现有高g加速度计的结构不能满足一阶固有频率高、频率响应范围宽的特性要求,同时抗冲击性能较差的问题,提出了一种复合梁压阻加速度计。In order to solve the problem that the structure of the existing high-g accelerometer cannot meet the characteristic requirements of high first-order natural frequency and wide frequency response range, and at the same time, the impact resistance is poor, a composite beam piezoresistive accelerometer is proposed.
本发明是采用如下技术方案实现的:复合梁压阻加速度计,包括硅基支撑框体、弹性梁、通过弹性梁支悬于硅基支撑框体中间的质量块,弹性梁的端部(应力最大且线性变化的区域)扩散有压敏电阻,硅基支撑框体下底面通过静电键合技术键合有玻璃底盖,质量块由框体和通过连接梁固定于框体内的质量芯块构成。The present invention is realized by adopting the following technical solutions: a composite beam piezoresistive accelerometer, comprising a silicon-based support frame, an elastic beam, a mass block suspended in the middle of the silicon-based support frame by the elastic beam, and the end of the elastic beam (stress The largest and linearly changing area) is diffused with piezoresistors, the bottom surface of the silicon-based support frame is bonded with a glass bottom cover through electrostatic bonding technology, and the mass block is composed of the frame body and the mass core block fixed in the frame by connecting beam .
当质量块受到Z向的加速度作用时,质量块受力引起弹性梁弯曲变形,弹性梁上压敏电阻产生应变,使压敏电阻阻值发生变化,由压敏电阻连接构成的惠斯通电桥输出信号,信号经处理可检测出Z向的加速度值,该过程与现有压阻式加速度计的原理一致,而于此同时,本发明所述质量块的框体和质量芯块之间亦发生位移,连接梁发生形变。因此当质量块受到高g惯性力冲击时,质量块的框体能起到缓冲作用,使质量块整体的位移较小,能承受的惯性力较大,使抗过载能力得到提高,避免在恶劣条件下出现梁断裂的现象;同时该结构的一阶固有频率较高,频率响应范围较宽。When the mass block is subjected to acceleration in the Z direction, the force on the mass block causes the elastic beam to bend and deform, and the piezoresistor on the elastic beam produces strain, which changes the resistance of the piezoresistor, and the Wheatstone bridge composed of piezoresistor connections Output signal, the acceleration value of Z direction can be detected through signal processing, this process is consistent with the principle of existing piezoresistive accelerometer, and at the same time, between the frame body of the mass block and the mass core block of the present invention also Displacement occurs, and the connecting beam deforms. Therefore, when the mass block is impacted by a high-g inertial force, the frame of the mass block can act as a buffer, so that the overall displacement of the mass block is small, and the inertial force it can withstand is large, so that the anti-overload ability is improved, and it is avoided in harsh conditions. The phenomenon of beam fracture occurs under the structure; at the same time, the first-order natural frequency of the structure is high, and the frequency response range is wide.
经有限元ANSYS软件分析:Analysis by finite element ANSYS software:
经数据比较,从频率来看本发明所述加速度计的频率较高,频响较好,频率响应范围宽;且加载同样的力,本发明所述加速度计的最大等效位移较小,即相同条件下它能承受更高的g值,实现抗高过载的功能。Through data comparison, the frequency of the accelerometer of the present invention is higher in terms of frequency, the frequency response is better, and the frequency response range is wide; and the same force is loaded, the maximum equivalent displacement of the accelerometer of the present invention is smaller, namely Under the same conditions, it can withstand a higher g value and realize the function of resisting high overload.
与现有技术相比,本发明采用带有框体的质量块结构,在加载相同惯性力作用下,质量块的框体起到缓冲的作用,使该结构的质量块整体位移更小,使其能承受更高的g值,并具有一阶固有频率高、频率响应范围宽的优点。本发明采用硅基衬底,通过湿发腐蚀KOH腐蚀剂在(100)晶面进行各向异性腐蚀,通过腐蚀时间控制腐蚀深度,同时采用凸角补偿技术,得到由框体和通过连接梁固定于框体内的质量芯块构成的质量块;并采用ICP刻蚀得到梁结构。其所采用的加工技术皆为现有公知技术,本技术领域的技术人员能通过现有公知加工技术实现本发明所述加速度计的结构。Compared with the prior art, the present invention adopts a mass block structure with a frame. Under the same inertial force, the frame of the mass block acts as a buffer, so that the overall displacement of the mass block of this structure is smaller, so that It can withstand a higher g value, and has the advantages of high first-order natural frequency and wide frequency response range. The invention adopts a silicon-based substrate, carries out anisotropic etching on the (100) crystal plane by wet etching KOH etchant, controls the etching depth through etching time, and adopts the salient angle compensation technology at the same time to obtain A mass block composed of mass core blocks in the frame; and a beam structure obtained by ICP etching. The processing technologies adopted are all existing known technologies, and those skilled in the art can realize the structure of the accelerometer of the present invention through the existing known processing technologies.
本发明结构合理,能满足一阶固有频率高、频率响应范围宽的特性要求,并且具有高抗过载能力。The invention has a reasonable structure, can meet the characteristic requirements of high first-order natural frequency and wide frequency response range, and has high anti-overload capability.
附图说明 Description of drawings
图1为本发明的结构示意图;Fig. 1 is a structural representation of the present invention;
图2为图1的A-A剖面图;Fig. 2 is the A-A sectional view of Fig. 1;
图3为本发明压敏电阻连接构成的一具体惠斯通电桥原理图;Fig. 3 is a concrete Wheatstone bridge principle diagram that varistor connection of the present invention forms;
图中:1-硅基支撑框体;2-弹性梁;3-压敏电阻;4-玻璃底盖;5-框体;6-连接梁;7-质量芯块。In the figure: 1-silicon-based supporting frame; 2-elastic beam; 3-varistor; 4-glass bottom cover; 5-frame; 6-connecting beam; 7-mass pellet.
具体实施方式Detailed ways
复合梁压阻加速度计,包括硅基支撑框体1、弹性梁2、通过弹性梁2支悬于硅基支撑框体1中间的质量块,弹性梁2的端部扩散有压敏电阻3,硅基支撑框体1下底面通过静电键合技术键合有玻璃底盖4,质量块由框体5和通过连接梁6固定于框体5内的质量芯块7构成。The composite beam piezoresistive accelerometer includes a silicon-based
具体实施时,考虑到:1、惠斯通电桥电路的电源采用恒压源供电,如阻值大,其功耗小,温度不容易升高;2、电阻阻值大,变化量大,输出大,有益于提高灵敏度等原因,弹性梁2的端部,即弹性梁2与质量块、硅基支撑框体1的交叉处皆设置有压敏电阻3。压敏电阻3连接构成的惠斯通电桥,根据电桥的输出信号最终得出Z向的加速度。During specific implementation, it is considered that: 1. The power supply of the Wheatstone bridge circuit is powered by a constant voltage source. If the resistance value is large, the power consumption is small and the temperature is not easy to rise; 2. The resistance value is large, the change is large, and the output The piezoresistor 3 is arranged at the end of the
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JP5652775B2 (en) * | 2009-05-29 | 2015-01-14 | トレックス・セミコンダクター株式会社 | Acceleration sensor element and acceleration sensor having the same |
CN102141576B (en) * | 2010-12-28 | 2012-06-06 | 中北大学 | High-gravity (g) acceleration sensor in plane of micro-electromechanical system (MEMS) based on resonance tunnelling structure (RTS) |
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CN109231155B (en) * | 2018-09-04 | 2020-07-07 | 北京理工大学 | Piezoresistive MEMS acceleration sensor with composite beam structure and packaging device |
CN112798821B (en) * | 2020-12-28 | 2021-10-08 | 武汉大学 | A biaxial piezoelectric accelerometer |
CN112881755B (en) * | 2021-01-19 | 2022-06-14 | 西北工业大学 | Broadband response silicon micro-mechanical accelerometer with high vibration stability |
CN114217094B (en) * | 2021-12-14 | 2023-07-25 | 安徽大学 | A MEMS high-g value three-axis accelerometer |
CN117572021B (en) * | 2024-01-17 | 2024-04-05 | 中国工程物理研究院电子工程研究所 | Sensitive structure and acceleration sensor |
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