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CN100433380C - White light emitting device with light emitting diode and application thereof - Google Patents

White light emitting device with light emitting diode and application thereof Download PDF

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Publication number
CN100433380C
CN100433380C CNB2005100641355A CN200510064135A CN100433380C CN 100433380 C CN100433380 C CN 100433380C CN B2005100641355 A CNB2005100641355 A CN B2005100641355A CN 200510064135 A CN200510064135 A CN 200510064135A CN 100433380 C CN100433380 C CN 100433380C
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light
crystal grain
light emitting
primary color
emitting device
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CN1848466A (en
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陈政权
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Genesis Photonics Inc
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Genesis Photonics Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48111Disposition the wire connector extending above another semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body

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Abstract

A white light emitting device with light emitting diode comprises a first crystal grain and a second crystal grain, wherein the first crystal grain is provided with a semiconductor light emitting layer capable of generating a first primary color light, and the second crystal grain is provided with two semiconductor light emitting layers capable of generating a second primary color light and a third primary color light respectively; the second primary color light and the third primary color light of the second crystal grain are mixed with the first primary color light of the first crystal grain to output white light. The white light emitting device with the light emitting diode has the advantages of good color rendering and low cost.

Description

具有发光二极管的白光发光装置及其应用 White light emitting device with light emitting diode and its application

【技术领域】 【Technical field】

本发明是有关于一种发光二极管(Light Emitting Diode;简称LED)的发光装置,特别是涉及一种可发射白光的发光二极管装置,其可用于背光模组(Back Light Module)、交通号志、照明设备、LED彩色印表机、显示器等需使用白光光源的装置。The present invention relates to a light-emitting diode (Light Emitting Diode; LED for short) light-emitting device, in particular to a light-emitting diode device capable of emitting white light, which can be used in backlight modules (Back Light Module), traffic signs, Lighting equipment, LED color printers, displays and other devices that require white light sources.

【背景技术】 【Background technique】

参阅图1,一般的液晶显示器的背光模组依其光源入射的方向而言,可分为直下式与侧光式两种,而不论是何种背光模组,其常使用的光源为冷阴极灯管。但是此种冷阴极灯管含有具有毒性的汞,易碎、耗电,而且以冷阴极灯管为光源时,其演色性(Color Rendering Index;简称CRI)也受到限制。Referring to Figure 1, the backlight module of a general liquid crystal display can be divided into direct type and side light type according to the incident direction of the light source. Regardless of the type of backlight module, the light source commonly used is cold cathode light tube. However, this kind of cold cathode lamp contains toxic mercury, is fragile, consumes power, and when the cold cathode lamp is used as the light source, its color rendering index (CRI) is also limited.

因此,为了改良式上述缺点,一种使用发光二极管为光源的背光模组被发展出来,图1和图2即揭示一种直下式背光模组1,其是设置于一液晶模组2的背侧22。其中,该液晶模组2具有一正侧21和该相反的背侧22;而该液晶模组2由正侧21至背侧22依序具有一彩色滤光单元23、一液晶单元24及一玻璃基板单元25。另外,该背光模组1包含一界定有一容室12的壳体11、一位于该容室12且设置于如图1所示的壳体11的底壁111的印刷电路板14,及多个电连接该印刷电路板14的发光单元13。Therefore, in order to improve the above-mentioned shortcomings, a backlight module using light-emitting diodes as a light source has been developed. FIG. 1 and FIG. side 22. Wherein, the liquid crystal module 2 has a front side 21 and the opposite back side 22; and the liquid crystal module 2 has a color filter unit 23, a liquid crystal unit 24 and a Glass substrate unit 25 . In addition, the backlight module 1 includes a casing 11 defining a chamber 12, a printed circuit board 14 located in the chamber 12 and arranged on the bottom wall 111 of the casing 11 as shown in FIG. 1 , and a plurality of The light emitting unit 13 of the printed circuit board 14 is electrically connected.

每一发光单元13依序具有一可发射绿光的第一发光二极管131、一可发射蓝光的第二发光二极管132、一可发射红光的第三发光二极管133、一可发射绿光的第四发光二极管134。该发光单元13的第一发光二极管131、第二发光二极管132、第三发光二极管133和第四发光二极管134所发射的光于该容室12内混光成为白光后由该壳体11的顶缘112射离该背光模组1而由该液晶模组2的背侧22进入该液晶模组2。Each light emitting unit 13 has a first light emitting diode 131 capable of emitting green light, a second light emitting diode 132 capable of emitting blue light, a third light emitting diode 133 capable of emitting red light, and a first light emitting diode 133 capable of emitting green light. Four LEDs 134 . The light emitted by the first light emitting diode 131, the second light emitting diode 132, the third light emitting diode 133 and the fourth light emitting diode 134 of the light emitting unit 13 is mixed in the chamber 12 to become white light, and then emitted from the top of the housing 11. The edge 112 exits the backlight module 1 and enters the liquid crystal module 2 from the backside 22 of the liquid crystal module 2 .

然而,上述以发光二极管为光源的背光模组1,为了达到红蓝绿三原色光混成白光所要求的混光强度比例,因而在同一发光单元13需具有四发光二极管131、132、133、134,耗费空间,而且增加调控驱动前述四发光二极管131、132、133、134的驱动电路设计的难度;另外也需要有较长的从壳体11的底壁111到顶缘112的距离以供混光,而不利于背光模组1的薄型化。However, the above-mentioned backlight module 1 using light-emitting diodes as the light source needs to have four light-emitting diodes 131, 132, 133, 134 in the same light-emitting unit 13 in order to achieve the required mixing intensity ratio of red, blue, and green primary colors into white light. It consumes space and increases the difficulty of controlling and driving the driving circuit design of the aforementioned four LEDs 131, 132, 133, 134; in addition, a longer distance from the bottom wall 111 to the top edge 112 of the housing 11 is required for light mixing. It is not conducive to the thinning of the backlight module 1 .

【发明内容】 【Content of invention】

本发明的主要目的,是在于提供一种具有良好演色性,且低成本具有发光二极管的白光发光装置。The main purpose of the present invention is to provide a white light emitting device with good color rendering and low cost with light emitting diodes.

本发明的另一目的,即在于提供一种简化电路设计、低成本且具有良好滤波特性的背光模组,该背光模组包含多个上述的白光发光装置。Another object of the present invention is to provide a backlight module with simplified circuit design, low cost and good filtering characteristics, the backlight module includes a plurality of the above-mentioned white light emitting devices.

本发明的一种白光发光装置,包含一第一晶粒,该第一晶粒具有一可产生一第一原色光的半导体发光层,其特征在于该白光发光装置还包含一具有二可分别产生一第二原色光和一第三原色光的半导体发光层的第二晶粒,该第二原色光和该第三原色光与该第一晶粒的第一原色光混光而输出一白光,该第二晶粒还具有一p型披覆层和一n型披覆层,所述半导体发光层夹设于该p型披覆层和该n型披覆层之间,所述半导体发光层中邻该p型披覆层的发光层具有一上阻障膜、一下阻障膜及一夹设于该上阻障膜和下阻障膜之间的载子局限膜,该载子局限膜具有一山形结构,该山形结构由连续的山峰和山谷所构成,该载子局限膜的能障小于该上阻障膜和该下阻障膜的能障。A white light emitting device of the present invention comprises a first crystal grain, and the first crystal grain has a semiconductor light emitting layer capable of generating light of a first primary color, and is characterized in that the white light emitting device further comprises a first crystal grain which can generate light of a first primary color. A second crystal grain of the semiconductor light-emitting layer of a second primary color light and a third primary color light, the second primary color light and the third primary color light are mixed with the first primary color light of the first crystal grain to output a white light, the first The two crystal grains also have a p-type cladding layer and an n-type cladding layer, the semiconductor light-emitting layer is interposed between the p-type cladding layer and the n-type cladding layer, and the semiconductor light-emitting layer is adjacent to The light-emitting layer of the p-type cladding layer has an upper barrier film, a lower barrier film, and a carrier confinement film sandwiched between the upper barrier film and the lower barrier film, and the carrier confinement film has a A mountain-shaped structure, the mountain-shaped structure is composed of continuous peaks and valleys, the energy barrier of the carrier confinement film is smaller than the energy barriers of the upper barrier film and the lower barrier film.

【附图说明】 【Description of drawings】

下面结合附图及实施例对本发明进行详细说明:Below in conjunction with accompanying drawing and embodiment the present invention is described in detail:

图1是一以往液晶显示器的背光模组的局部剖面侧视分解示意图;FIG. 1 is a partial cross-sectional side view exploded schematic diagram of a backlight module of a conventional liquid crystal display;

图2是所述液晶显示器的背光模组的俯视示意图;Fig. 2 is a schematic top view of the backlight module of the liquid crystal display;

图3是一本发明的背光模组的第一实施例的局部剖面侧视解示意图,说明该背光模组包含多个白光发光装置,且每一白光发光装置具有一第一封装件和一第二封装件;Fig. 3 is a partial cross-sectional side view schematic diagram of the first embodiment of the backlight module of the present invention, illustrating that the backlight module includes a plurality of white light emitting devices, and each white light emitting device has a first package and a first Two packages;

图4是该第一实施例的光模组的俯视示意图;FIG. 4 is a schematic top view of the optical module of the first embodiment;

图5是该第一实施例中,该白光发光装置的局部剖面侧视示意图;Fig. 5 is a schematic partial cross-sectional side view of the white light emitting device in the first embodiment;

图6是该第一实施例中的一第二晶粒的剖面示意图,说明该第二晶粒具有一第一发光层和一第二发光层的结构;6 is a schematic cross-sectional view of a second crystal grain in the first embodiment, illustrating a structure in which the second crystal grain has a first light-emitting layer and a second light-emitting layer;

图7是该第一实施例中,该第二晶粒具有山形结构的发光层的剖面示意图,说明该山形结构是由连续的山峰和山谷所形成;7 is a schematic cross-sectional view of the light-emitting layer in which the second grain has a mountain-shaped structure in the first embodiment, illustrating that the mountain-shaped structure is formed by continuous peaks and valleys;

图8是该第一实施例的第二封装件的另一种封装态样;Fig. 8 is another package form of the second package of the first embodiment;

图9是一本发明第二实施例的背光模组中的白光发光装置的局部剖面示意图;9 is a partial cross-sectional schematic diagram of a white light emitting device in a backlight module according to a second embodiment of the present invention;

图10是该第二实施例的背光模组的俯视示意图;10 is a schematic top view of the backlight module of the second embodiment;

图11是该第二实施例的背光模组的色彩图;Fig. 11 is a color diagram of the backlight module of the second embodiment;

图12是一频谱图,说明该第二实施例的背光模组的发光频谱;FIG. 12 is a spectrum diagram illustrating the emission spectrum of the backlight module of the second embodiment;

图13是一本发明第三实施例的背光模组中的白光发光装置的局部剖面示意图;13 is a partial cross-sectional schematic diagram of a white light emitting device in a backlight module according to a third embodiment of the present invention;

图14是一本发明第四实施例的背光模组中的局部剖面示意图,说明以多个白光发光装置为光源的状态;FIG. 14 is a schematic partial cross-sectional view of a backlight module according to a fourth embodiment of the present invention, illustrating a state where a plurality of white light emitting devices are used as light sources;

图15是该第四实施例的背光模组中,沿图14的右侧向左侧方向观视所述白光发光装置的侧视示意图。FIG. 15 is a schematic side view of the white light emitting device viewed from the right side to the left side of FIG. 14 in the backlight module of the fourth embodiment.

【具体实施方式】 【Detailed ways】

为了方便说明,以下的实施例,类似的元件以相同的标号表示。For the convenience of description, in the following embodiments, similar elements are denoted by the same reference numerals.

参阅图3、4,本发明第一实施例是一直下式背光模组3,其设置于一液晶模组4的背侧42。该液晶模组4具有一正侧41和该相反的背侧42;该液晶模组4由正侧41至背侧42依序具有一彩色滤光单元43、一液晶单元44及一玻璃基板单元45。Referring to FIGS. 3 and 4 , the first embodiment of the present invention is a direct-lit backlight module 3 , which is disposed on the back side 42 of a liquid crystal module 4 . The liquid crystal module 4 has a front side 41 and the opposite back side 42; the liquid crystal module 4 has a color filter unit 43, a liquid crystal unit 44 and a glass substrate unit in sequence from the front side 41 to the back side 42 45.

该背光模组3包含一界定有一容室32的壳体31及多个设置于该容室32的白光发光装置33。该壳体31具有一可透光且邻近于该液晶模组4背侧42的第一侧壁311、一相反于该第一侧壁311的第二侧壁312,及一由该第一侧壁311的周缘向该第二侧壁312的周缘渐缩的第三侧壁313。该第一侧壁311、第二侧壁312和第三侧壁313彼此界定出该容室32。The backlight module 3 includes a casing 31 defining a chamber 32 and a plurality of white light emitting devices 33 disposed in the chamber 32 . The casing 31 has a first side wall 311 which is transparent and adjacent to the back side 42 of the liquid crystal module 4, a second side wall 312 opposite to the first side wall 311, and a The peripheral edge of the wall 311 is tapered toward the third side wall 313 that is tapered to the peripheral edge of the second side wall 312 . The first side wall 311 , the second side wall 312 and the third side wall 313 define the chamber 32 with each other.

参阅图4、5,每一白光发光装置33包括一设置于该第二侧壁312上的承载单元34,及成对配置于该承载单元34上的第一封装件35和第二封装件36。4 and 5, each white light emitting device 33 includes a carrier unit 34 arranged on the second side wall 312, and a first package 35 and a second package 36 arranged in pairs on the carrier unit 34 .

该第一封装件35包括一可产生一第一原色光的第一晶粒351及一用以承载该第一晶粒351的第一承载座352、一可导电的p型电极导线架353及一可导电的n型电极导线架354。该p型电极导线架353穿设于该承载座352并分别与该第一晶粒351和该承载单元34电连接;n型电极导线架354也是穿设于该第一承载座352并分别与该第一晶粒351和该承载单元34电连接。在本实施例中,该第一晶粒351是一红光发光二极管,第一原色光是一波长范围为落在575纳米至700纳米之间的红光。The first package 35 includes a first crystal grain 351 capable of generating a first primary color light, a first carrier 352 for carrying the first crystal grain 351, a conductive p-type electrode lead frame 353 and A conductive n-type electrode lead frame 354 . The p-type electrode lead frame 353 passes through the bearing seat 352 and is electrically connected to the first crystal grain 351 and the carrying unit 34 respectively; the n-type electrode lead frame 354 also passes through the first bearing seat 352 and is respectively connected to the bearing unit 34 The first die 351 is electrically connected to the carrying unit 34 . In this embodiment, the first crystal grain 351 is a red light emitting diode, and the first primary color light is a red light with a wavelength range between 575 nm and 700 nm.

该第二封装件36包括一可产生一第二原色光和一第三原色光的第二晶粒361、一用以承载该第二晶粒361的第二承载座362、一可导电的p型电极导线架363及一可导电的n型电极导线架364。该p型电极导线架363穿设于该第二承载座362并分别与该第二晶粒361和该承载单元34电连接;n型电极导线架364也是穿设于该第二承载座362并分别与该第二晶粒361和该承载单元34电连接。The second package 36 includes a second crystal grain 361 capable of generating a second primary color light and a third primary color light, a second carrier 362 for carrying the second crystal grain 361 , a conductive p-type An electrode lead frame 363 and a conductive n-type electrode lead frame 364 . The p-type electrode lead frame 363 is passed through the second bearing seat 362 and electrically connected with the second crystal grain 361 and the carrying unit 34 respectively; the n-type electrode lead frame 364 is also passed through the second bearing seat 362 and are respectively electrically connected to the second die 361 and the carrying unit 34 .

参阅图6、7,该第二晶粒361如图6所示依序具有一基板52、一缓冲层53、一n型披覆层(cladding layer)54、一第一发光层55、一第二发光层56、一p型披覆层57、一p侧接触层58、一形成于该p侧接触层58上的p型电极511、一形成于n型披覆层54上的n侧接触层59及一形成于该n侧接触层59上的n型电极512。6 and 7, the second grain 361 has a substrate 52, a buffer layer 53, an n-type cladding layer (cladding layer) 54, a first light-emitting layer 55, a first Two light emitting layers 56, a p-type cladding layer 57, a p-side contact layer 58, a p-type electrode 511 formed on the p-side contact layer 58, an n-side contact formed on the n-type cladding layer 54 layer 59 and an n-type electrode 512 formed on the n-side contact layer 59 .

该第二发光层56包括一具有一位于下方的第一面564和一相反的第二面565的载子局限膜562,及二分别由该第一面564和该第二面565向远离该载子局限膜562方向延伸的下阻障膜561和上阻障膜563。该第二面565具有连续的山峰567与山谷568形状,所述山峰567和山谷568构成一山形结构569。The second light-emitting layer 56 includes a carrier confinement film 562 with a first surface 564 located below and an opposite second surface 565, and two The lower barrier film 561 and the upper barrier film 563 extending in the direction of the carrier confinement film 562 . The second surface 565 has continuous peaks 567 and valleys 568 , and the peaks 567 and valleys 568 form a mountain-shaped structure 569 .

图7为图6山形结构569的纵剖面的局部放大侧视示意图。对于两相邻山峰567’、567”而言,山峰567’中相对较高的顶部5671’与其相邻的山峰567”中对较高的顶部5671”的最短距离定义为径长D,也就是定义被前述两相邻山峰567’、567”所围绕的山谷568’的径长D。另外,所述山谷568底部至第一面564的距离定义为H,且0≤H≤2nm;由此可知,山峰567’中相对较低的鞍部5672’则不可称为山谷。再者,图7中山形结构569的该纵剖面的长度定义为L,因此,一具有山形结构的发光层的密度定义为:在发光层径长内的所有山形结构径长的总和与该发光层径长的比值。即该第二发光层56的密度等于(D1+D2+D3+D4+D5+D6+D7)/L。而该第二发光层56的密度较佳地介于5%至75%之间。FIG. 7 is a partially enlarged schematic side view of a longitudinal section of the mountain-shaped structure 569 in FIG. 6 . For two adjacent mountain peaks 567 ', 567 ", the shortest distance between the relatively higher top 5671 ' in the mountain peak 567 ' and the higher top 5671 " in the adjacent mountain peak 567 " is defined as the path length D, that is Define the path length D of the valley 568' surrounded by the aforementioned two adjacent peaks 567', 567". In addition, the distance from the bottom of the valley 568 to the first surface 564 is defined as H, and 0≤H≤2nm; it can be seen that the relatively low saddle 5672' in the mountain peak 567' cannot be called a valley. Furthermore, the length of the longitudinal section of the mountain-shaped structure 569 in Fig. 7 is defined as L, therefore, the density of a light-emitting layer with a mountain-shaped structure is defined as: the sum of the diameter lengths of all mountain-shaped structures within the diameter length of the light-emitting layer and the luminescent layer The ratio of layer diameter to length. That is, the density of the second light emitting layer 56 is equal to (D1+D2+D3+D4+D5+D6+D7)/L. The density of the second light emitting layer 56 is preferably between 5% and 75%.

该载子局限膜562所使用材质的能障(Energy Gap)必须小于该上阻障膜563和该下阻障膜561的能障。在本实施例中,该载子局限膜562为含有铟且化学式为Al(1-x-y)InyGaxN的材料所制成,其中,x≥0,y>0,(1-x-y)≥0。该上阻障膜563和该下阻障膜561的材质则为氮化镓。The energy gap of the material used for the carrier confinement film 562 must be smaller than the energy gap of the upper barrier film 563 and the lower barrier film 561 . In this embodiment, the carrier confinement film 562 is made of a material containing indium and having a chemical formula of Al (1-xy) In y Ga x N, where x≥0, y>0, (1-xy) ≥0. The material of the upper barrier film 563 and the lower barrier film 561 is gallium nitride.

因此,该第二发光层56藉由调整x和y的比例而发射出该波长范围为落在430纳米至485纳米间的第三原色光,也就是蓝光,并利用山形结构569的密度来调整发射出光的强度。在本实施例中,该第二发光层56的密度等于38%。Therefore, the second light-emitting layer 56 emits the third primary color light, that is, blue light, whose wavelength range falls between 430 nm and 485 nm by adjusting the ratio of x and y, and uses the density of the mountain-shaped structure 569 to adjust the emission The intensity of the emitted light. In this embodiment, the density of the second light-emitting layer 56 is equal to 38%.

同样地,图6中该第一发光层55如该第二发光层56的包括有相同材质所制成的一下阻障膜551、一具有山形结构559的载子局限膜552,及一上阻障膜553。该第二发光层55可藉由调整x和y的比例而发射出该波长范围为落在510纳米至560纳米之间的第二原色光,也就是绿光,并利用山形结构559的密度调整发射出光的强度。在本实施例中,该第一发光层55的密度等于8%。Similarly, the first luminescent layer 55 in FIG. 6 includes a lower barrier film 551 made of the same material as the second luminescent layer 56, a carrier confinement film 552 with a mountain-shaped structure 559, and an upper barrier film 552. barrier film 553 . The second light-emitting layer 55 can emit the second primary color light, that is, green light, whose wavelength range is between 510 nanometers and 560 nanometers, by adjusting the ratio of x and y, and utilize the density adjustment of the mountain-shaped structure 559 The intensity of emitted light. In this embodiment, the density of the first light-emitting layer 55 is equal to 8%.

值得一提的是,除了利用山形结构559、569的密度分别来调整该第一发光层55和第二发光层56所分别产生的第三原色光和第二原色光的强度比例外,也可成长多个该第一发光层55或第二发光层56以增加亮度并调控比例。再者,紧邻该p型披覆层57的该第二发光层56须具有山形结构569,但是该第一发光层55也可以是以量子井(quantum well)结构取代山形结构的发光层。另外,该第二封装件36(见图5)也可以是如图8所揭示的以不同封装形式出现的封装件36’,该封装件36’包括一可产生一第二原色光和一第三原色光的第二晶粒361及一用以承载该第二晶粒361的第二承载座362’、一可导电的p型电极导线架363’、一可导电的n型电极导线架364’。该p型电极导线架363和n型电极导线架364分别电连接该第二晶粒361,该第二承载座362’是一如树脂(resin)的透光包覆物。It is worth mentioning that, in addition to using the densities of the mountain-shaped structures 559 and 569 to adjust the intensity ratios of the third primary color light and the second primary color light respectively generated by the first light-emitting layer 55 and the second light-emitting layer 56, it is also possible to grow A plurality of the first luminescent layer 55 or the second luminescent layer 56 is used to increase the brightness and adjust the ratio. Furthermore, the second light-emitting layer 56 adjacent to the p-type cladding layer 57 must have a mountain-shaped structure 569, but the first light-emitting layer 55 can also be a light-emitting layer with a quantum well structure instead of a mountain-shaped structure. In addition, the second package 36 (see FIG. 5 ) can also be a package 36' in different package forms as disclosed in FIG. The second crystal grain 361 of the three primary colors, a second bearing seat 362' for carrying the second crystal grain 361, a conductive p-type electrode lead frame 363', a conductive n-type electrode lead frame 364' . The p-type electrode lead frame 363 and the n-type electrode lead frame 364 are respectively electrically connected to the second die 361, and the second carrier 362' is a light-transmitting coating such as resin.

继续参阅图4、5,该承载单元34用以提供该第一封装件35和第二封装件36所需的电源。在本实施例中,所述发光装置33共用同一承载单元34,且该承载单元34是一印刷电路板,但承载单元34也可以是可导电的导线。而且,该承载单元34数量不限定为一,也可使用多个承载单元34。Continuing to refer to FIGS. 4 and 5 , the carrying unit 34 is used to provide the power required by the first package 35 and the second package 36 . In this embodiment, the light emitting devices 33 share the same carrying unit 34, and the carrying unit 34 is a printed circuit board, but the carrying unit 34 may also be a conductive wire. Moreover, the number of the bearing unit 34 is not limited to one, and multiple bearing units 34 may also be used.

配合参阅图3,当该第一封装件35和第二封装件36受电源驱动时,该第一封装件35产生的第一原色光与该第二封装件36产生的第二原色光和该第三原色光于该容室32混光后而从该背光模组3的第一侧壁311射出一白光,并由该液晶模组4的背侧42射入该液晶模组4。With reference to FIG. 3 , when the first package 35 and the second package 36 are driven by power, the first primary color light produced by the first package 35 and the second primary color light produced by the second package 36 and the The third primary color light is mixed in the chamber 32 to emit a white light from the first side wall 311 of the backlight module 3 , and enter the liquid crystal module 4 from the back side 42 of the liquid crystal module 4 .

由于本发明使用了可同时产生第二原色光和第三原色光的第二晶粒361(见图6),因此可以减少了发光二极管的使用数量,进而降低所述背光模组3中第一侧壁311和第二侧壁312之间所需的混光距离,也就同时减少了该背光模组3的厚度,有利于该背光模组3的薄型化。再者,对于已有固定第一原色光(红光)波长的第一晶粒351而言,在调整白平衡时,可藉由调整该第二晶粒361中山形结构559、569的密度,或调整含有铟且化学式为Al(1-x-y)InyGaxN的材料中x和y的比例,或增加并调整该第一发光层55和第二发光层56的数量,而达成特定的第二原色光(绿光)和第三原色光(蓝光)的强度和比例的要求,进而与第一晶粒351的第一原色光达成白平衡。在实际应用方面,也就是对于已有特定波长的红光发光二极管的第一晶粒351而言,可以直接选用相配合的第二晶粒361组合而成为白光发光装置33,既免去调整三原色光的混光比例,又简化了以往驱动控制电路的设计。Because the present invention uses the second crystal grain 361 (see FIG. 6 ) that can generate the second primary color light and the third primary color light at the same time, it can reduce the number of light emitting diodes used, thereby reducing the number of the first side of the backlight module 3. The required light mixing distance between the wall 311 and the second side wall 312 also reduces the thickness of the backlight module 3 , which is beneficial to the thinning of the backlight module 3 . Furthermore, for the first crystal grain 351 that has a fixed wavelength of the first primary color light (red light), when adjusting the white balance, the density of the mountain-shaped structures 559, 569 in the second crystal grain 361 can be adjusted, Or adjust the ratio of x and y in the material containing indium and the chemical formula is Al(1-x-y)InyGaxN, or increase and adjust the number of the first light-emitting layer 55 and the second light-emitting layer 56 to achieve a specific second primary color light (green light) and the third primary color light (blue light) according to the intensity and ratio requirements, and then reach the white balance with the first primary color light of the first crystal grain 351 . In terms of practical application, that is, for the first crystal grain 351 of a red light emitting diode with a specific wavelength, the matching second crystal grain 361 can be directly selected to form a white light emitting device 33, which eliminates the need to adjust the three primary colors. The mixing ratio of light simplifies the design of the previous drive control circuit.

如图9、10所示,本发明的第二实施例也是一种如第一较实施例的直下式背光模组,也包含一界定有一容室32的壳体31及多个设置于该容室32的白光发光装置33’。所不同的是,该第一较实施例的白光发光装置33是将该第一晶粒351和第二晶粒361分别封装在该第一封装件35和第二封装件36中,再设置于该承载单元34上;而该第二较实施例的白光发光装置33’是将该第一晶粒351和第二晶粒361封装在单一的白光封装件39中,再设置于承载单元34上。As shown in Figures 9 and 10, the second embodiment of the present invention is also a direct-lit backlight module as in the first embodiment, and also includes a housing 31 defining a chamber 32 and a plurality of housings arranged in the chamber. White light emitting device 33' of chamber 32. The difference is that in the white light emitting device 33 of the first comparative embodiment, the first die 351 and the second die 361 are packaged in the first package 35 and the second package 36 respectively, and then placed in the on the carrier unit 34; and the white light emitting device 33' of the second comparative embodiment is to package the first crystal grain 351 and the second crystal grain 361 in a single white light package 39, and then set it on the carrier unit 34 .

该第二实施例的白光发光装置33’包括该设置于该第二侧壁312上的承载单元34及该白光封装件39。该白光封装件39包括一具有一凹槽391的承载座392、一可导电的p型电极导线架393和一可导电的n型电极导线架394。较佳地,该白光封装件39还包括一填入该凹槽391的透光包覆物(图未示),例如树脂或可透光材质所制成。该第一晶粒351和第二晶粒361分别容置于该凹槽391中,且分别电连接该p型电极导线架393和n型电极导线架394。而该p型电极导线架393和n型电极导线架394又分别电连接该承载单元34,使得由该承载单元34的直流电可致能该第一晶粒351和第二晶粒361。The white light emitting device 33' of the second embodiment includes the carrying unit 34 disposed on the second side wall 312 and the white light package 39. The white light package 39 includes a carrier 392 having a groove 391 , a conductive p-type electrode lead frame 393 and a conductive n-type electrode lead frame 394 . Preferably, the white light package 39 further includes a light-transmitting covering (not shown) filled in the groove 391 , such as made of resin or a light-transmitting material. The first crystal grain 351 and the second crystal grain 361 are accommodated in the groove 391 respectively, and are electrically connected to the p-type electrode lead frame 393 and the n-type electrode lead frame 394 respectively. The p-type electrode lead frame 393 and the n-type electrode lead frame 394 are respectively electrically connected to the carrying unit 34 , so that the first die 351 and the second die 361 can be enabled by the direct current of the carrying unit 34 .

图11说明了上述白光封装件39的CIE色彩图(ChromaticityDiagram),在本实施例中,对于第一原色光(红光)波长已固定为635nm的第一晶粒351而言,在调整白平衡时,可藉由如第一实施例所述的调整该第二晶粒361的方式,使其发射出波长为538nm的第二原色光(绿光)和波长为471nm的第三原色光(蓝光),进而与第一晶粒351的第一原色光达成白平衡。FIG. 11 illustrates the CIE color diagram (ChromaticityDiagram) of the above-mentioned white light package 39. In this embodiment, for the first crystal grain 351 whose wavelength of the first primary color light (red light) has been fixed to 635nm, when adjusting the white balance , the second primary color light (green light) with a wavelength of 538nm and the third primary color light (blue light) with a wavelength of 471nm can be emitted by adjusting the second crystal grain 361 as described in the first embodiment. , and further achieve a white balance with the first primary color light of the first crystal grain 351 .

另外,如图12的光谱图所示,本实施例的发射光谱中相对强度较高的波长分别集中在471nm、538nm和635nm附近,如图中的实线所示,也就是为蓝、绿、红三原色光的波长范围。由于液晶模组4(见图3)的彩色滤光单元43滤波频谱如图中虚线所示的允许蓝绿红三原色光的波长范围通过,因此,本实施例背光模组所提供的具有良好演色性的背光,其波长符合彩色滤光单元43的滤波范围,所以可提高背光的穿透率,增加液晶显示器的亮度及饱和度。In addition, as shown in the spectrogram in Figure 12, the relatively high-intensity wavelengths in the emission spectrum of this embodiment are concentrated around 471nm, 538nm and 635nm, respectively, as shown by the solid lines in the figure, that is, blue, green, The wavelength range of the red primary color light. Because the filter spectrum of the color filter unit 43 of the liquid crystal module 4 (see FIG. 3 ) allows the wavelength ranges of the blue, green and red primary colors to pass through as shown by the dotted lines in the figure, the backlight module of this embodiment provides good color rendering. The wavelength of the permanent backlight conforms to the filtering range of the color filter unit 43, so the transmittance of the backlight can be improved, and the brightness and saturation of the liquid crystal display can be increased.

参阅图13,本发明的第三实施例也是一种如第一较实施例的直下式背光模组。所不同的是,该第三实施例的每一白光发光装置33”包括一设置于该第二侧壁312(见图3)上的承载单元34、二分别以覆晶方式设置于该承载单元34上的第一晶粒351和第二晶粒361、多个分别电连该第一晶粒351和第二晶粒361的导电球体38,及一包覆该第一晶粒351和该第二晶粒361的透光包覆物37,而在本实施例中,该透光包覆物37为一树脂。Referring to FIG. 13 , the third embodiment of the present invention is also a direct type backlight module as in the first comparative embodiment. The difference is that each white light emitting device 33" of the third embodiment includes a carrying unit 34 disposed on the second side wall 312 (see FIG. 34 on the first crystal grain 351 and the second crystal grain 361, a plurality of conductive spheres 38 electrically connected to the first crystal grain 351 and the second crystal grain 361 respectively, and a covering of the first crystal grain 351 and the second crystal grain 351 The light-transmitting covering 37 of the two dies 361, and in this embodiment, the light-transmitting covering 37 is a resin.

参阅图14、15,本发明第四实施例是一侧光式背光模组6,其设置于一液晶模组4的背侧42。该背光模组6包含一导光板61、一反射集光单元62,及多个呈直线排列的白光发光装置33’。Referring to FIGS. 14 and 15 , the fourth embodiment of the present invention is a side-lit backlight module 6 , which is disposed on the backside 42 of a liquid crystal module 4 . The backlight module 6 includes a light guide plate 61, a reflective light collecting unit 62, and a plurality of white light emitting devices 33' arranged in a straight line.

该导光板61具有一平行且邻近于该液晶模组4背侧42的第一侧面612、一垂直于该第一侧面612的第二侧面613、一由该第二侧面613远离该第一侧面612的侧缘向该第一侧面612逐渐靠缩的第三侧面614。该反射集光单元62连接该第二侧面613并与该第二侧面613相配合定出一容置空间615,该反射集光单元62用以反射射至于其上的光。The light guide plate 61 has a first side 612 parallel to and adjacent to the back side 42 of the liquid crystal module 4, a second side 613 perpendicular to the first side 612, and a side away from the first side from the second side 613. A side edge of the first side 612 gradually shrinks toward the third side 614 of the first side 612 . The reflective light-collecting unit 62 is connected to the second side 613 and cooperates with the second side 613 to define an accommodating space 615 . The reflective light-collecting unit 62 is used for reflecting light incident thereon.

所述白光发光装置33’设置于该容置空间615,每一白光发光装置33’包括一承载单元34,及配置于该承载单元34上的白光封装件39。需说明的是,在本实施例中所述白光发光装置33’是共用一承载单元34,而该承载单元34是一印刷电路板。The white light emitting devices 33' are disposed in the accommodating space 615, and each white light emitting device 33' includes a carrying unit 34 and a white light package 39 arranged on the carrying unit 34. It should be noted that, in this embodiment, the white light emitting device 33' shares a carrying unit 34, and the carrying unit 34 is a printed circuit board.

经由该承载单元34驱动所述白光发光装置33’后所发出的白光将直接经由第二侧面613射入该导光板61或经由该反射集光单元62反射后进入该导光板61,再经由该第三侧面614的反射后由该第一侧面612射出该导光板61,藉此由该液晶模组4的背侧42提供该液晶模组4所需的光源。The white light emitted by driving the white light emitting device 33 ′ through the carrying unit 34 will directly enter the light guide plate 61 through the second side 613 or enter the light guide plate 61 after being reflected by the reflective light collecting unit 62 , and then pass through the light guide plate 61 . Reflected by the third side 614 , it exits the light guide plate 61 from the first side 612 , so that the back side 42 of the liquid crystal module 4 provides the light source required by the liquid crystal module 4 .

综观上述,本发明的构造特征,利用该可产生第一原色光的第一晶粒351以及该可同时产生第二原色光和第三原色光的第二晶粒361而构成一白光发光装置,所以在调配白平衡上所需使用的发光二极管的晶粒数量较少,容易调控制混光的比例,而且也可以简化电路板的设计,另外也可以提供良好的演色性,确能提供一种实用低成本的白光发光装置。In view of the above, the structural feature of the present invention is to use the first crystal grain 351 that can generate the first primary color light and the second crystal grain 361 that can simultaneously generate the second primary color light and the third primary color light to form a white light emitting device, so The number of grains of light-emitting diodes used in adjusting white balance is small, it is easy to adjust the ratio of mixed light, and it can also simplify the design of the circuit board. In addition, it can also provide good color rendering, which can indeed provide a practical Low cost white light emitting device.

Claims (9)

1.一种白光发光装置,包含一第一晶粒,该第一晶粒具有一可产生一第一原色光的半导体发光层,其特征在于该白光发光装置还包含一具有二可分别产生一第二原色光和一第三原色光的半导体发光层的第二晶粒,该第二原色光和该第三原色光与该第一晶粒的第一原色光混光而输出一白光,该第二晶粒还具有一p型披覆层和一n型披覆层,所述半导体发光层夹设于该p型披覆层和该n型披覆层之间,所述半导体发光层中邻该p型披覆层的发光层具有一上阻障膜、一下阻障膜及一夹设于该上阻障膜和下阻障膜之间的载子局限膜,该载子局限膜具有一山形结构,该山形结构由连续的山峰和山谷所构成,该载子局限膜的能障小于该上阻障膜和该下阻障膜的能障。1. A white light emitting device, comprising a first crystal grain, the first crystal grain has a semiconductor light-emitting layer that can generate a first primary color light, and it is characterized in that the white light emitting device also includes a semiconductor light emitting layer that can generate a first primary color light. The second primary color light and the second primary color light of the second crystal grain of the semiconductor light-emitting layer of the third primary color light, the second primary color light and the third primary color light are mixed with the first primary color light of the first crystal grain to output a white light, the second The grain also has a p-type cladding layer and an n-type cladding layer, the semiconductor light-emitting layer is interposed between the p-type cladding layer and the n-type cladding layer, and the semiconductor light-emitting layer is adjacent to the The light-emitting layer of the p-type cladding layer has an upper barrier film, a lower barrier film, and a carrier confinement film sandwiched between the upper barrier film and the lower barrier film, and the carrier confinement film has a mountain-shaped structure, the mountain-shaped structure is composed of continuous peaks and valleys, the energy barrier of the carrier confinement film is smaller than the energy barriers of the upper barrier film and the lower barrier film. 2.如权利要求1所述的白光发光装置,其特征在于:该第一原色光是一波长范围为落在575纳米至700纳米之间的红光,该第二原色光是一波长范围为落在510纳米至560纳米之间的绿光,该第三原色光是一波长范围为落在430纳米至485纳米之间的蓝光。2. The white light emitting device according to claim 1, wherein the first primary color light is a red light with a wavelength range between 575 nm and 700 nm, and the second primary color light is a red light with a wavelength range of The green light falling between 510 nm and 560 nm, the third primary color light is blue light with a wavelength range between 430 nm and 485 nm. 3.如权利要求1所述的白光发光装置,其特征在于:该载子局限膜是一以化学式为Al(1-x-y)InyGaxN的材料所制成,且x大于或等于零,y大于零,(1-x-y)大于或等于零。3. The white light emitting device according to claim 1, wherein the carrier confinement film is made of a material having a chemical formula of Al (1-xy) In y Ga x N, and x is greater than or equal to zero, y is greater than zero and (1-xy) is greater than or equal to zero. 4.如权利要求3所述的白光发光装置,其特征在于:该第二晶粒中具有山形结构的发光层的密度为5%至75%之间,该发光层的密度为所有山谷形结构的径长总和与该发光层的径长的比值。4. The white light emitting device according to claim 3, characterized in that: the density of the light-emitting layer with the mountain-shaped structure in the second crystal grain is between 5% and 75%, and the density of the light-emitting layer is all valley-shaped structures The ratio of the sum of the path lengths to the path length of the light-emitting layer. 5.如权利要求1所述的白光发光装置,还包含一承载座、一可导电的p型电极导线架,及一可导电的n型电极导线架,该承载座承载该第一晶粒和第二晶粒,该p型电极导线架分别电连接该第一晶粒和第二晶粒,该n型电极导线架分别电连接该第一晶粒和第二晶粒。5. The white light emitting device as claimed in claim 1, further comprising a carrier, a conductive p-type electrode lead frame, and a conductive n-type electrode lead frame, the carrier carries the first crystal grain and For the second crystal grain, the p-type electrode lead frame is electrically connected to the first crystal grain and the second crystal grain respectively, and the n-type electrode lead frame is electrically connected to the first crystal grain and the second crystal grain respectively. 6.如权利要求5所述的白光发光装置,其特征在于:该白光发光装置的承载座具有一用以容置该第一晶粒和第二晶粒的凹槽,及一位于该凹槽中且包覆该第一晶粒和第二晶粒的透光包覆物。6. The white light emitting device according to claim 5, characterized in that: the supporting base of the white light emitting device has a groove for accommodating the first crystal grain and the second crystal grain, and a A light-transmitting coating covering the first crystal grain and the second crystal grain. 7.如权利要求1所述的白光发光装置,还包含一用以承载且电连接该第一晶粒和该第二晶粒的承载单元,及至少一包覆该第一晶粒和该第二晶粒的透光包覆物。7. The white light emitting device according to claim 1, further comprising a carrying unit for carrying and electrically connecting the first die and the second die, and at least one covering the first die and the second die Two-grain light-transmitting coating. 8.如权利要求1所述的白光发光装置,其特征在于:该白光发光装置还包含一承载该第一晶粒的第一承载座及一承载该第二晶粒的第二承载座。8 . The white light emitting device according to claim 1 , further comprising a first bearing seat for supporting the first die and a second bearing seat for supporting the second die. 9 . 9.一种背光模组,用于提供一液晶模组的背光光源,其特征在于:该背光模组包含多个如权利要求5所述的白光发光装置。9. A backlight module for providing a backlight source for a liquid crystal module, characterized in that the backlight module comprises a plurality of white light emitting devices as claimed in claim 5.
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