CN100431182C - light emitting assembly - Google Patents

Abstract

A light-emitting component utilizes a transparent bonding layer to combine a light-transmitting substrate with a light-emitting laminated layer, the light-emitting laminated layer is provided with a diffusion surface, the diffusion surface is bonded with the light-transmitting substrate through the transparent bonding layer, and the light-emitting laminated layer and the transparent bonding layer have refractive index difference, so that the light generated inside a light-emitting diode is taken out with improved probability according to the refractive index difference between the light-emitting laminated layer and the transparent bonding layer, and further the light-emitting efficiency is improved.

Description

Lighting components

technical field

The invention relates to a light-emitting diode, in particular to a light-emitting component with a diffusing surface.

Background technique

Light-emitting components are widely used, for example, in optical display devices, laser diodes, traffic signs, data storage devices, communication devices, lighting devices, and medical devices. In this technology, one of the important topics for technicians at present is how to improve the luminous efficiency of the light-emitting component.

From the relationship of Snell's law, it can be seen that light can be completely emitted only within the critical angle _θc , and light beyond this critical angle will be reflected and may be absorbed. In other words, when the light emitted by the light-emitting diode enters the medium with a low refractive index from a material with a high refractive index, the light generated inside the light-emitting layer of the light-emitting diode needs to be in the conical shape of 2θ _c to be successfully emitted to the outside of the light-emitting diode. . That is, the light emitted by the light-emitting diode enters the medium environment with a low refractive index from the epitaxial layer of the light-emitting diode with a high refractive index, such as a substrate or air, etc., and the light generated inside the light-emitting layer of the light-emitting diode will partly enter the medium environment through refraction, However, a part of the incident light with an incident angle greater than the critical angle is reflected back to the epitaxial layer of the LED. Since the surrounding environment of the epitaxial layer of the LED is all low-dielectric materials, the reflected light is reflected back and forth through the interior, and finally part of the light is absorbed or completely disappears.

Stefan Illek et al. (U.S. Patent Publication No. 2002/0017652) disclose a buried microreflector, which uses etching technology to etch the epitaxial layer of a light-emitting component into a microreflective structure, which includes hemispherical, pyramidal Or pyramid shape, etc., then deposit a metal reflective layer on the epitaxial layer, then bond the top of the micro-reflective structure epitaxial layer with a conductive carrier (silicon chip), and then remove the opaque substrate of the original epitaxial layer . Through the buried micro-reflector, all light emitted from the light-emitting layer to the micro-reflector is reflected back to the epitaxial layer, and emitted in a direction perpendicular to the light-emitting surface of the front surface of the light-emitting diode, without being limited by the critical angle.

Contents of the invention

The inventor of this case obtained an inspiration when thinking about how to solve the problem of total internal reflection. He believed that if a light-emitting component is provided, the light-emitting component uses a transparent adhesive layer to combine a light-transmitting substrate and a light-emitting laminated layer. The light-emitting stack has a diffusing surface, and the diffusing surface is bonded to the light-transmitting substrate through the transparent bonding layer, wherein there is a difference in refractive index between the light-emitting stacking layer and the transparent bonding layer, according to the refraction between the two The difference in efficiency increases the probability of the light generated inside the light-emitting diode being taken out, thereby improving the luminous efficiency. It can be seen from Figure 1 that when the light 1A emitted by the luminescent layer hits the diffusing surface, part of the light 1A enters the light-transmitting substrate through refraction to form a light field 1B; the other part of the light 1A can be diffused through the diffusing surface (Diffuse) to form a light field 1C, using the diffuse surface to make the light originally limited by the critical angle diffused and reflected back to the light-emitting stack, and then taken out through the front of the light-emitting stack, so that the light will have a higher chance of being removed. If some light diffused for the first time is still fully reflected back to the diffusion surface by the front of the light-emitting layer, the incident angle of the light can be changed through the second diffusion on the diffusion surface to increase the probability of light extraction. Therefore, no matter how many times the light has undergone total reflection, as long as the light is diffused through the diffusing surface, the probability of light extraction can be increased, thereby improving the luminous efficiency.

The light-emitting component of the present invention includes: a semiconductor light-emitting laminate with a diffusing surface, wherein the semiconductor light-emitting laminate is epitaxially grown on a first light-transmitting substrate; a second light-transmitting substrate; and a semiconductor light-emitting laminate formed on the second A transparent bonding layer between the light-transmitting substrate and the diffusing surface of the semiconductor light-emitting laminated layer, wherein there is a difference in refractive index between the light-emitting laminated layer and the transparent bonding layer.

Another light-emitting component of the present invention includes: a semiconductor light-emitting stack with a diffusing surface; a light-transmitting substrate; and a transparent conductive adhesive layer formed between the light-transmitting substrate and the diffusing surface of the semiconductor light-emitting stack , wherein there is a difference in refractive index between the light-emitting laminated layer and the transparent adhesive layer.

Another light-emitting component of the present invention includes: a light-transmitting substrate; a first reaction layer formed on the light-transmitting substrate; a transparent adhesive layer formed on the first reaction layer; a transparent adhesive layer formed on the transparent adhesive layer. A second reaction layer; and a semiconductor light-emitting layer with a diffusing surface formed on the second reaction layer, the diffusing surface is in contact with the transparent bonding layer, wherein the light-emitting layer and the transparent bonding layer There is a difference in the refractive index between them.

The upper surface of the semiconductor light-emitting stacked layer of the present invention also includes a second diffusing surface.

The diffusion surface of the present invention is a rough surface. The diffusing surface can also have a distributed pattern, and the surface of the distributed pattern is a rough surface.

The above-mentioned distributed graphics include at least one graphic selected from the group of graphics consisting of hemispherical, pyramidal, and pyramidal shapes.

In the present invention, the above-mentioned second reaction layer can partially penetrate the transparent adhesive layer and contact the first reaction layer through the diffusing surface. When the first and second reaction layers are conductive, the light-transmitting substrate is a conductive substrate. When the ohmic contact is formed between the first and second reaction layers, the light-emitting component has a vertical structure.

In the light-emitting component of the present invention, the semiconductor light-emitting stack has a first electrode and a second electrode in the same direction. Under the above-mentioned first electrode and/or the second electrode, the semiconductor light-emitting stack layer includes a first and/or a second light-transmitting conductive layer; the material of the light-transmitting conductive layer includes selected from indium oxide At least one material in the material group formed by tin, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide and zinc tin oxide, or other alternative materials.

When the light-emitting component of the present invention has a vertical structure, a first electrode and a second electrode are respectively formed on the front side of the semiconductor light-emitting stack and the back side of the light-transmitting substrate. Under the above-mentioned first electrode, a first light-transmitting conductive layer is included on the front surface of the semiconductor light-emitting stack; the material of the light-transmitting conductive layer includes selected from indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide At least one material in the material group composed of aluminum and zinc tin oxide or other alternative materials.

The light-emitting component of the present invention, wherein the semiconductor light-emitting stack includes a first semiconductor layer; a light-emitting layer formed on the first semiconductor layer; and a second semiconductor layer formed on the light-emitting layer.

In the light-emitting component of the present invention, the second light-transmitting substrate includes at least one material selected from the group consisting of GaP, SiC, Al2O3, and glass. The semiconductor light emitting layer includes at least one material selected from the material group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN and AlInGaN.

The transparent adhesive layer includes at least one material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutene (PFCB), and indium tin oxide.

The transparent conductive adhesive layer of the present invention includes at least one material selected from the material group consisting of intrinsically conducting polymers and polymers doped with conductive materials. The polymer includes at least one material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutene (PFCB). The conductive material includes at least one material selected from the material group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, zinc tin oxide, Au, and Ni/Au. The transparent substrate is conductive.

The above-mentioned first reaction layer includes at least one material selected from the material group consisting of SiNx, Ti, and Cr. The second reaction layer includes at least one material selected from the material group consisting of SiNx, Ti, and Cr.

Description of drawings

Figure 1 is a light diffusion diagram;

FIG. 2 is a schematic diagram showing a light-emitting component of the present invention;

FIG. 3 is a schematic diagram showing a light emitting device of the present invention.

Symbol Description:

10 light-transmitting substrate

11 transparent bonding layer

12 first semiconductor layer

121 diffuse surface

13 luminous layers

14 Second semiconductor layer

15 first electrode

16 second electrode

20 conductive light-transmitting substrate

21 conductive transparent adhesive layer

Detailed ways

Example 1

2 is a light-emitting component 1 of a preferred embodiment of the present invention, including a light-transmitting substrate 10; a transparent bonding layer 11 formed on the light-transmitting substrate 10; a first semiconductor formed on the transparent bonding layer 11 Layer 12, the surface of the first semiconductor layer 12 close to the transparent adhesive layer is a diffusing surface 121, wherein there is a difference in refractive index between the light-emitting stacked layer and the transparent adhesive layer, and the first semiconductor layer 12 is far away from the transparent adhesive layer. The bonding layer side has an epitaxial region and an electrode region; a light-emitting layer 13 formed on the epitaxial region of the first semiconductor layer 12; a second semiconductor layer 14 formed on the light-emitting layer 13; formed on the first semiconductor layer 12 a first electrode 15 on the electrode region; and a second electrode 16 formed on the second semiconductor layer 14 .

The above-mentioned first semiconductor layer 12 , light emitting layer 13 and second semiconductor layer 14 are formed on a first transparent substrate by epitaxial method. The aforementioned diffusing surface 121 is a roughened surface, which can be grown in the epitaxy process of the light-emitting diode, or chemically etched or dried by using Inductive Coupling Plasma (ICP) in the grain process. Part of the first semiconductor lamination layer 12 is etched by etching technology, and then the light-emitting diode with the roughened surface is transferred and bonded to the light-transmitting substrate using the transparent adhesive layer 11, so that the roughened surface and the light-transmitting substrate pass through the transparent bonding layers joined together.

The above-mentioned diffusing surface 121 can also form a predetermined pattern on the surface of the first semiconductor layer by pre-patterned photomask etching technology. A roughened surface is formed on the surface of a semiconductor layer, so that the light extraction efficiency is improved.

A first reaction layer can be added between the above-mentioned transparent substrate and the transparent bonding layer.

A second reaction layer can be added between the transparent adhesive layer and the first semiconductor layer to increase the adhesion of the transparent adhesive layer.

Under the above-mentioned first electrode, the first semiconductor layer includes a first light-transmitting conductive layer; under the above-mentioned second electrode, the second semiconductor layer includes a second light-transmitting conductive layer; The material of a light-transmitting conductive layer includes at least one material selected from the material group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide, and zinc tin oxide, or other alternative materials; the second The material of the transparent conductive layer includes at least one material selected from the material group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide and zinc tin oxide, or other alternative materials.

The above-mentioned second reaction layer can partially penetrate the transparent adhesive layer and contact the first reaction layer through the diffusing surface. When the first and second reaction layers are conductive and the light-transmitting substrate is a conductive substrate, the first And the second reaction layer produces ohmic contact, then the light-emitting component has a vertical structure.

When the light-emitting component has a vertical structure, a first electrode and a second electrode can be respectively formed on the second semiconductor and under the light-transmitting substrate. Under and above the first electrode, the second semiconductor layer includes a first light-transmitting conductive layer; the material of the light-transmitting conductive layer includes selected from indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide And at least one material in the material group composed of zinc tin oxide or other alternative materials.

Example 2

Fig. 3 is another preferred embodiment of the light-emitting component 2 of the present invention, its main structure is similar to that of the light-emitting component 1, the difference is that a conductive transparent bonding layer 21 is used instead of the transparent bonding layer 11, and the light-transmitting substrate is a conductive light-transmitting The substrate 20 , so that the light-emitting component 2 can be conducted up and down, the first electrode 15 is formed under the conductive light-transmitting substrate 20 ; the second electrode 16 is formed on the second semiconductor layer 14 .

In the light-emitting component 2, a light-transmitting conductive layer is included under the second electrode and above the second semiconductor layer; the material of the light-transmitting conductive layer includes selected from indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide At least one material in the material group composed of aluminum and zinc tin oxide or other alternative materials.

In the above-mentioned embodiments, the upper surface of the second semiconductor light emitting stack further includes a second diffusing surface.

In each of the above-mentioned embodiments, the light-transmitting substrate includes at least one material selected from the group consisting of GaP, SiC, Al2O3, and glass.

The above-mentioned conductive and light-transmitting substrate includes at least one material selected from the material group consisting of GaP and SiC.

The above-mentioned first semiconductor layer, light emitting layer and second semiconductor layer include at least one material selected from the material group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN and AlInGaN.

The above-mentioned transparent adhesive layer includes at least one material selected from the material group consisting of polyimide (PI), benzocyclobutene (BCB), perfluorocyclobutene (PFCB), and indium tin oxide .

The above-mentioned first reaction layer includes at least one material selected from the material group consisting of SiNx, Ti, and Cr.

The above-mentioned second reaction layer includes at least one material selected from the material group consisting of SiNx, Ti, and Cr.

The above-mentioned conductive transparent adhesive layer includes at least one material selected from the material group consisting of intrinsically conductive polymers and polymers doped with conductive materials. Wherein the conductive material includes at least one material selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, zinc tin oxide, Au, and Ni/Au.

The above descriptions are only preferred embodiments of the present invention, and the scope of the present invention is not limited to these preferred embodiments. Any changes made according to the present invention belong to the scope of patent application of the present invention. Therefore, any person skilled in the art can certainly make any changes without departing from the scope and spirit of the claims of the present invention.

Claims (47)

1. A light-emitting component, comprising: a semiconductor light-emitting stack having a diffusing surface; a light-transmitting substrate; and A transparent bonding layer formed between the light-transmitting substrate and the diffusing surface of the semiconductor light-emitting stack, so that the light generated by the semiconductor light-emitting stack can pass through the transparent bonding layer and be extracted from the light-transmitting substrate, wherein, There is a difference in refractive index between the semiconductor light-emitting laminated layer and the transparent bonding layer. 2. A light-emitting component as claimed in claim 1, wherein the diffusing surface is a roughened surface. 3. The light-emitting component as claimed in claim 1, wherein the diffusing surface is a diffusing surface with distributed patterns, and the surface of the distributed pattern diffusing surface is a roughened surface. 4. A light-emitting component as claimed in claim 3, wherein the distributed pattern comprises at least one pattern selected from the group of patterns consisting of hemisphere, pyramid, and pyramid. 5 . The light emitting device according to claim 1 , further comprising a first electrode and a second electrode formed in the same direction of the semiconductor light emitting stack. 6. A light-emitting component according to claim 5, further comprising a first light-transmitting conductive layer and a light-transmitting conductive layer formed on the semiconductor light-emitting lamination layer under the first electrode and the second electrode respectively. The second light-transmitting conductive layer. 7. A light-emitting component as claimed in claim 6, characterized in that: the material of the first light-transmitting conductive layer is selected from indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide, and zinc tin oxide At least one material in the material group formed; the material of the second light-transmitting conductive layer includes materials selected from the material group formed by indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide, and zinc tin oxide of at least one material. 8. A light-emitting component as claimed in claim 1, wherein the semiconductor light-emitting stack comprises a first semiconductor layer; a light-emitting layer formed on the first semiconductor layer; and a light-emitting layer formed on the light-emitting layer second semiconductor layer. 9. The light-emitting component as claimed in claim 1, wherein the light-transmitting substrate comprises at least one material selected from the group consisting of GaP, SiC, Al2O3, and glass. 10. A light-emitting component according to claim 1, characterized in that: the semiconductor light-emitting layer comprises at least one material selected from the group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN, and AlInGaN Material. 11. A light-emitting component as claimed in claim 1, wherein the transparent adhesive layer comprises a material selected from polyimide, benzocyclobutene, perfluorocyclobutene, and indium tin oxide At least one material in the group. 12. The light-emitting component as claimed in claim 1, further comprising a second diffusing surface on the upper surface of the semiconductor light-emitting stack. 13. A lighting assembly, comprising: a semiconductor light-emitting stack having a diffusing surface; a light-transmitting substrate; and a transparent conductive adhesive layer formed between the light-transmitting substrate and the diffusing surface of the semiconductor light-emitting stack, so that the light generated by the semiconductor light-emitting stack can pass through the transparent conductive adhesive layer and be extracted from the light-transmitting substrate, Wherein, there is a difference in refractive index between the semiconductor light-emitting laminated layer and the transparent conductive bonding layer. 14. A light-emitting component as claimed in claim 13, wherein the diffusing surface is a roughened surface. 15. The light-emitting component as claimed in claim 13, wherein the diffusing surface is a diffusing surface with distributed patterns, and the surface of the distributed pattern diffusing surface is a roughened surface. 16. A light-emitting component according to claim 15, wherein the distributed pattern comprises at least one pattern selected from the group consisting of hemispherical, pyramidal, and pyramidal shapes. 17. A light-emitting component as claimed in claim 13, wherein the light-transmitting substrate is conductive. 18. The light-emitting component according to claim 17, further comprising a first electrode and a second electrode respectively formed on the front surface of the semiconductor light-emitting stack and the back surface of the light-transmitting substrate. 19. The light-emitting component as claimed in claim 18, further comprising a light-transmitting conductive layer formed under the first electrode and on the front surface of the semiconductor light-emitting stack. 20. A light-emitting component as claimed in claim 19, characterized in that: the material of the light-transmitting conductive layer is selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide, and zinc tin oxide. At least one material from the material group. 21. A light-emitting component according to claim 13, characterized in that: the semiconductor light-emitting stack comprises a first semiconductor layer; a light-emitting layer formed on the first semiconductor layer; and a light-emitting layer formed on the light-emitting layer second semiconductor layer. 22. The light-emitting component as claimed in claim 13, wherein the light-transmitting substrate comprises at least one material selected from the group consisting of GaP, SiC, Al2O3, and glass. 23. A light-emitting component according to claim 13, characterized in that: the semiconductor light-emitting layer includes at least one material selected from the group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN, and AlInGaN Material. 24. A light-emitting component according to claim 13, wherein the transparent conductive adhesive layer comprises at least one material selected from the group consisting of spontaneous conductive polymers and polymers doped with conductive materials. kind of material. 25. A light-emitting component as claimed in claim 24, characterized in that: the polymer comprises materials selected from the group consisting of polyimide, benzocyclobutene, perfluorocyclobutene, and indium tin oxide At least one material in the group. 26. A light-emitting component as claimed in claim 24, wherein the conductive material comprises indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, zinc tin oxide, Au, and Ni/Au At least one material of the formed group of materials. 27. A light-emitting component as claimed in claim 13, wherein the upper surface of the semiconductor light-emitting laminate further comprises a second diffusing surface. 28. A lighting assembly comprising: A light-transmitting substrate a first reaction layer formed on the transparent substrate; a transparent adhesive layer formed on the first reaction layer; a second reactive layer formed on the transparent adhesive layer; and A semiconductor light-emitting stacked layer with a diffusing surface formed on the second reaction layer, the diffusing surface is in contact with the transparent bonding layer, so that the light generated by the semiconductor light-emitting stacking layer can pass through the transparent bonding layer and pass through the transparent bonding layer The light-transmitting substrate is taken out, wherein there is a difference in refractive index between the semiconductor light-emitting laminated layer and the transparent bonding layer. 29. A light-emitting component as claimed in claim 28, wherein the diffusing surface is a roughened surface. 30. A light-emitting component as claimed in claim 28, wherein the diffusing surface is a diffusing surface with distributed patterns, and the surface of the distributed pattern diffusing surface is a roughened surface. 31. A light-emitting component as claimed in claim 28, wherein the distribution pattern comprises at least one pattern selected from the group of patterns consisting of a hemisphere, a pyramid, and a pyramid. 32. A light emitting device as claimed in claim 28, further comprising a first electrode and a second electrode formed in the same direction of the semiconductor light emitting stack. 33. A light-emitting component according to claim 32, further comprising a first light-transmitting conductive layer and a light-transmitting conductive layer formed on the semiconductor light-emitting lamination layer under the first electrode and the second electrode respectively. The second light-transmitting conductive layer. 34. A light-emitting component as claimed in claim 33, characterized in that: the material of the first light-transmitting conductive layer is selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide, and zinc tin oxide At least one material in the material group formed; the material of the second light-transmitting conductive layer includes materials selected from the material group formed by indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide, and zinc tin oxide of at least one material. 35. The light-emitting component as claimed in claim 28, wherein the first reactive layer and the second reactive layer are conductive. 36. A light-emitting component according to claim 35, wherein the transparent substrate is a conductive substrate. 37. The light-emitting component according to claim 36, wherein the second reactive layer can partially penetrate the transparent adhesive layer through the diffusing surface and make ohmic contact with the first reactive layer. 38. The light-emitting component according to claim 37, further comprising a first electrode and a second electrode respectively formed on the front surface of the semiconductor light-emitting stack and the back surface of the light-transmitting substrate. 39. The light-emitting component according to claim 38, further comprising forming a light-transmitting conductive layer under the first electrode and on the front surface of the semiconductor light-emitting stack. 40. A light-emitting component as claimed in claim 39, wherein the material of the light-transmitting conductive layer is selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc aluminum oxide, and zinc tin oxide. At least one material from the material group. 41. A light-emitting component according to claim 28, characterized in that: the semiconductor light-emitting stack comprises a first semiconductor layer; a light-emitting layer formed on the first semiconductor layer; and a light-emitting layer formed on the light-emitting layer second semiconductor layer. 42. A light-emitting component as claimed in claim 28, wherein the light-transmitting substrate comprises at least one material selected from the group consisting of GaP, SiC, Al2O3, and glass. 43. A light-emitting component according to claim 28, characterized in that: the semiconductor light-emitting layer comprises at least one material selected from the group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN, and AlInGaN Material. 44. A light-emitting component as claimed in claim 28, wherein the transparent adhesive layer comprises a material selected from polyimide, benzocyclobutene, perfluorocyclobutene, and indium tin oxide At least one material in the group. 45. The light-emitting component as claimed in claim 28, wherein the first reactive layer comprises at least one material selected from the material group consisting of SiNx, Ti, and Cr. 46. A light-emitting component as claimed in claim 28, wherein the second reactive layer comprises at least one material selected from the material group consisting of SiNx, Ti, and Cr. 47. A light-emitting component as claimed in claim 28, further comprising a second diffusing surface on the upper surface of the semiconductor light-emitting stack.

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