CN100431144C - Package substrate - Google Patents
Package substrate Download PDFInfo
- Publication number
- CN100431144C CN100431144C CNB2006101018385A CN200610101838A CN100431144C CN 100431144 C CN100431144 C CN 100431144C CN B2006101018385 A CNB2006101018385 A CN B2006101018385A CN 200610101838 A CN200610101838 A CN 200610101838A CN 100431144 C CN100431144 C CN 100431144C
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- China
- Prior art keywords
- base plate
- packaging
- conductor circuit
- hole
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
According to the package board of the present invention, each soldering pad formed on the top surface of the package board, on which an IC chip is to be mounted, is small (133 to 170 mum in diameter), so the metallic portion occupied by the soldering pads on the surface of the package board is also small. On the other hand, each soldering pad formed on the bottom surface of the package board, on which a mother board, etc. are to be mounted, is large (600 mum in diameter), so the metallic portion occupied by the soldering pads on the surface of the package board is also large. Consequently, a dummy pattern 58M is formed between conductor circuits 58U and 58U for forming signal lines on the IC chip side surface of the package board thereby to increase the metallic portion on the surface and adjust the rate of the metallic portion between the IC chip side and the mother board side of the package board, protecting the package board from warping in the manufacturing processes, as well as during operation.
Description
The application is that application number is 200410045619.0, the applying date is on September 28th, 1998, division is submitted the dividing an application for the application for a patent for invention of " base plate for packaging " that day be on May 10th, 2004, denomination of invention to.
Technical field
The present invention relates to be used to load the base plate for packaging of IC chip, in more detail, the present invention relates to respectively to have formed the base plate for packaging that the IC chip is connected the weld zone that is connected usefulness of the weld zone (pad) of usefulness and substrates such as motherboard, daughter board at upper surface and lower surface.
Background technology
High integration IC chip is loaded on the base plate for packaging, is connected with substrates such as motherboard, daughter boards.Figure 23 illustrates and is loaded in IC chip 80 on the base plate for packaging 600 and is installed in state on the motherboard 90, and the formation of this base plate for packaging is described with reference to Figure 23.This base plate for packaging 600 forms conductor circuit 658A, 658B on the two sides of chip substrate 630, upper strata at this conductor circuit 658A, 658B forms conductor circuit 658C, 658D, middle across interlayer resin insulating layers 650, in the upper-layer configured interlayer resin insulating layers 750 of this conductor circuit 658C, 658D.And, on this interlayer resin insulating layers 650, form through hole 660B, 660A, on interlayer resin insulating layers 750, form through hole 660D, 660C.On the other hand, go up formation pedestal 676U on the surface of IC chip 80 1 sides (upper surface), be used for being connected, go up on the surface of daughter board 6000 (lower surface) and form pedestal 676D, be used for being connected with the weld zone 92 of motherboard 90 with the weld zone 82 of IC chip 80.This pedestal 676U forms on weld zone 675U, and pedestal 676D forms on weld zone 675D.Here,, between IC chip 80 and base plate for packaging 600, sealed resin 84 in order to realize the reliable connection of pedestal 676U, 676D, same, between base plate for packaging 600 and motherboard 90, sealed resin 94.
As mentioned above, base plate for packaging 600 is used for connecting high integration IC chip 80 and motherboard 90.That is, weld zone 82 diameters of IC chip 80 are little, are 133～170 μ m, and weld zone 92 diameters of motherboard 90 1 sides are big, are 600 μ m, can not directly the IC chip be installed on the motherboard, so, utilize base plate for packaging to carry out relaying.
Base plate for packaging forms the weld zone 675U of IC chip one side and the weld zone 675D of motherboard one side accordingly with the size of the weld zone 92 of the weld zone 82 of above-mentioned IC chip and motherboard respectively.Therefore, to account for the ratio of surface area of motherboard one side of base plate for packaging 600 different for the area of the weld zone 675U area that accounts for the ratio of surface area of IC chip one side of base plate for packaging 600 and weld zone 675D.Here, interlayer insulating film 650 and chip substrate 630 are formed by resin, and weld zone 675U, 675D are formed by metals such as nickel.Therefore, in manufacturing process, when sclerosis that utilizes interlayer resin insulating layers 650,750 and drying etc. are partly shunk this resin, because the area of above-mentioned weld zone 675U accounts for ratio poor that the area of the ratio of surface area of IC chip one side and weld zone 675D accounts for the surface area of motherboard one side, base plate for packaging carries out situation from a side warpage to the IC chip can occur.And then, when loading actual uses of IC chip, under the situation of shrinking repeatedly because of the heating of IC chip, owing to this resin partly and metal partly be shrinkage poor of weld zone, also can produce warpage.
On the other hand, in the multilager base plate that uses as base plate for packaging, 1 layer of conductor circuit in the multi-layer conductive circuit used as ground plane or bus plane, its objective is in order to reduce noise etc.But in such as shown in figure 23 existing multi-layer wire substrate, this ground plane (or bus plane) carried out with being connected by wiring of outside terminal.That is, become wiring 658A, the 658B (conductor circuit) of ground plane on the upper strata of substrate 630.This wiring (ground plane) 658B via through holes 660B is connected with wiring 658D-S, and this wiring 658D-S via through holes 660D is connected with pedestal 676U.
Here, being connected by wiring 658D-S of ground plane 658D and pedestal 676U undertaken, so this wiring 658D-S causes noise easily, this noise just becomes the reason of the misoperation of the electronic component on the multi-layer wire substrate that is connected integrated chip etc.In addition, also need to reserve the space of this wiring being carried out cabling in multi-layer wire substrate, this has just hindered the realization of densification.
On the other hand, generally form capacitor, be used for reducing the noise of the signal between IC chip and the motherboard etc. in the inside of base plate for packaging.In example shown in Figure 23, inner conductor circuit 658B, the 658A that is located at the two sides of chip substrate 630 formed as bus plane and ground plane, thus, get involved chip substrate 630 and formed capacitor.
Figure 24 (A) is the plane graph of the inner conductor circuit 658B that forms on chip substrate 630.On this inner conductor circuit 658B, form contact (land) weld zone 640 that ground plane 638G and levels connect usefulness.Around this contact weld zone 640, form buffer insulation band 642.
Here, in the base plate for packaging of prior art, contact 640a is connected by wiring 640c with weld zone 640b, so the transfer path between top conductor layer and the lower floor's conductor layer is long, signal velocity is slow, simultaneously the contact resistance height.
In addition, shown in Figure 24 A, like that, in weld zone 640, may there be bight K at the connecting portion that reaches between wiring 640C and the weld zone 640b between wiring 640C and the contact 640a.In the thermal cycle of base plate for packaging, because of resinous chip substrate 630 and interlayer resin insulating layers 650 different with the thermal coefficient of expansion of the weld zone of making of metals such as copper 640, so stress concentrates on this bight K, such as shown in figure 23, produce crack L1 in interlayer resin insulating layers 650, broken string can appear in conductor circuit 658D on this interlayer resin insulating layers 650 or through hole 660D.
On the other hand, the pedestal 676D via through holes 660D-of motherboard 90 1 sides wiring 678-weld zone 675 is connected with the conductor circuit 658C of internal layer.What Figure 24 (B) illustrated through hole 660D among Figure 23 and pedestal 675D sees enlarged drawing in the past from the C side.The pedestal 675 of placing pedestal 676D is rounded, as mentioned above, 678 is connected with rounded through hole 660D through connecting up.
Summary of the invention
The present invention proposes in order to solve above-mentioned problem, and its purpose is to provide a kind of base plate for packaging with not warpage of pedestal.
The present invention also aims to provide a kind of multi-layer wire substrate affected by noise and multi-layer printed wiring base plate of being not easy.
The present invention also aims to provide a kind of base plate for packaging, can shorten the transmitting range between upper strata wiring and the lower-layer wiring.
The present invention also aims to provide a kind of base plate for packaging, broken string between pedestal and through hole, can not occur.
According to the present invention, a kind of base plate for packaging is provided, this base plate for packaging has the insulating barrier of outermost conductor circuit, the outermost conductor circuit of support and is located at the multi-layer wire substrate of the inner conductor circuit of this insulating barrier downside, it is characterized in that: above-mentioned inner conductor circuit is bus plane and/or ground plane, connect above-mentioned insulating barrier and with through hole that above-mentioned inner conductor circuit is connected on formed pedestal.
The present invention also provides a kind of base plate for packaging, this base plate for packaging is the 1st conductor circuit with internal layer, the 1st interlayer resin insulating layers that on the 1st inner conductor circuit, forms, the 2nd conductor circuit of the internal layer that on the 1st interlayer resin insulating layers, forms, multi-layer wire substrate at the 2nd interlayer resin insulating layers that forms on the 2nd conductor circuit and the outermost conductor circuit that on the 2nd interlayer resin insulating layers, forms, it is characterized in that: the 2nd conductor circuit of above-mentioned internal layer is bus plane and/or ground plane, connect above-mentioned the 2nd interlayer resin insulating layers and with through hole that above-mentioned the 2nd conductor circuit is connected on formed pedestal.
The present invention also provides a kind of base plate for packaging, wherein, on the two sides of fuse substrate, form conductor layer, and then form conductor layer again through interlayer resin insulating layers, the conductor layer of above-mentioned fuse substrate one side is used as electrode layer, it is characterized in that: the contact that will be configured in the through hole of the fuse substrate perforation usefulness on the conductor layer that forms above-mentioned electrode layer is connected being made of one of weld zone of usefulness with the through hole with the interlayer resin insulating layers that connects a top side.
The present invention also provides a kind of base plate for packaging, wherein, on the two sides of fuse substrate, form conductor layer, and then form conductor layer again through interlayer resin insulating layers, conductor layer above the above-mentioned a certain interlayer resin insulating layers is used as electrode layer, it is characterized in that: the contact that will be configured in the through hole of interlayer resin insulating layers below the perforation on the conductor layer that forms above-mentioned electrode layer with connect above the through hole of interlayer resin insulating layers of a side be connected being made of one of weld zone of usefulness.
The present invention also provides a kind of base plate for packaging, form the multi-layer conductive circuit through the multilayer interlayer resin insulating layers, on the surface that IC chip one side is installed be connected on the surface of other substrate one side and form pedestal, this be connected to carry out between the surface of the side on other substrate and this other substrates resin-sealed, it is characterized in that: on the through hole of the outermost layer interlayer resin insulating layers that connects a side that is connected with other substrate, formed this and be connected to the pedestal of the side surface on other substrate.
The present invention also provides a kind of base plate for packaging, form the multi-layer conductive circuit through the multilayer interlayer resin insulating layers, on the surface that IC chip one side is installed be connected on the surface of other substrate one side and form pedestal, be connected at this and carry out resin-sealedly between surface of the side on other substrate and this other substrates, it is characterized in that: be connected to the pedestal of the side surface on other substrate having formed these on a plurality of through holes.
In the present invention, the weld zone of IC chip one side of base plate for packaging is little, and the shared ratio in metal part weld zone is also little, and the weld zone of substrates such as motherboard one side is big, and the ratio of metal part is also big.Here, between the figure of the conductor circuit of the IC of base plate for packaging one side, form virtual pattern, thus, increase the metal part, thereby adjust the ratio of the metal part of this IC chip one side and motherboard one side, make base plate for packaging not produce warpage.Here, so-called virtual pattern is meant the existence that does not have electrical connection or capacitor etc., only is the figure on the mechanical sense.
In the present invention, the weld zone of IC chip one side of base plate for packaging is little, and the shared ratio in metal part weld zone is also little, and the weld zone of substrates such as motherboard one side is big, and the ratio of metal part is also big.Here, periphery at the conductor circuit of the IC of base plate for packaging chip one side forms virtual pattern, thus, increase the metal part, thereby adjust the ratio of the metal part of this IC chip one side and motherboard one side, simultaneously, utilize metal virtual pattern to improve the mechanical strength of base plate for packaging outer peripheral portion, make base plate for packaging not produce warpage.
Have, in the present invention, virtual pattern can be electrically connected with power supply or ground plane again, perhaps, virtual pattern itself also can be power supply or ground plane.So, can prevent the noise of holding wire.
Description of drawings
Fig. 1 is the sectional view of the base plate for packaging of expression the 1st example of the present invention.
Fig. 2 is the X1-X1 cross-sectional view of base plate for packaging shown in Figure 1.
Fig. 3～Fig. 9 is the figure of manufacturing process of the base plate for packaging of expression the 1st example of the present invention.
Figure 10 is the sectional view of the base plate for packaging of expression the 2nd example of the present invention.
Figure 11 (A) is the plane graph of the base plate for packaging of the 2nd example, and Figure 11 (B) is the ground plan of IC chip.
Figure 12 is illustrated in the sectional view of placing the IC chip on the base plate for packaging shown in Figure 10 and being installed in the state on the motherboard.
Figure 13 is the sectional view of the multi-layer printed wiring base plate of expression the 3rd example of the present invention.
Figure 14 is the sectional view of formation of multi-layer printed wiring base plate of the variation of expression the 3rd example of the present invention.
Figure 15 is the sectional view of the base plate for packaging of expression the 4th example of the present invention.
Figure 16 (A) be the 4th example base plate for packaging formation the plane graph of chip substrate of internal layer copper figure, Figure 16 (B) is the local amplification view of Figure 16 (A).
Figure 17 is the sectional view of base plate for packaging of the variation of expression the 4th example of the present invention.
Figure 18 (A) is the plane graph of the conductor circuit that forms on base plate for packaging of the variation of the 4th example, and Figure 18 (B) is the local amplification view of Figure 18 (A).
Figure 19 is the sectional view of the base plate for packaging of expression the 5th example of the present invention.
Figure 20 is illustrated in the sectional view of placing the IC chip on the base plate for packaging shown in Figure 19 and being installed in the state on the motherboard.
Figure 21 is the sectional view of base plate for packaging of the variation of expression the 5th example of the present invention.
Figure 22 is the X5-X5 cross-sectional view of the base plate for packaging of Figure 21.
Figure 23 is the sectional view of the base plate for packaging of prior art.
Figure 24 (A) is the plane graph of the inner conductor circuit of Figure 23, and Figure 24 (B) is that the C of Figure 23 vows view, and Figure 24 (C) is that the D of Figure 23 vows view.
Embodiment
(the 1st example)
The formation of the base plate for packaging of the 1st example of the present invention is described with reference to Fig. 1.Fig. 1 illustrates the cross sectional shape of the base plate for packaging of the 1st example, and this base plate for packaging constitutes the encapsulation of so-called integrated circuit, has been used for placing in the above under the state of integrated circuit (not shown) attaching it on the motherboard (not shown).This base plate for packaging is provided with in the above and is used for the pedestal 76U that is connected with the pedestal side of integrated circuit, a side is provided with and is used for the pedestal 76D that is connected with the pedestal of motherboard below, works to transmit signal etc. and the power supply that comes from motherboard supplied with between this integrated circuit and motherboard and carry out relaying.
On the chip substrate 30 of base plate for packaging and below on form internal layer copper figure 34U, 34D as ground plane.In addition, get involved conductor circuit 58U, virtual pattern 58M and the through hole 60U that interlayer resin insulating layers 50 forms as holding wire on the upper strata of the 34U of internal layer copper figure, through hole 60U connects this interlayer resin insulating layers 50.Upper strata at conductor circuit 58U and virtual pattern 58M, form outermost layer conductor circuit 158U and the through hole 160U that connects this interlayer resin insulating layers 150 by interlayer resin insulating layers 150, on this conductor circuit 158U and through hole 160U, form the weld zone 75U that supports pedestal 76U.Here, the diameter of the weld zone 75U of IC chip one side is 133～177 μ m.
On the other hand, (the upper strata here means that with substrate 30 be the center on the upper strata of the ground plane of side below chip substrate 30 (internal layer copper figure) 34D, deserve to be called side above the substrate, the following title downside of substrate), through the conductor circuit 58D of interlayer resin insulating layers 50 formation as holding wire.Upper strata at this conductor circuit 58D, form outermost layer conductor circuit 158D and the through hole 160D that connects this interlayer resin insulating layers 150 by interlayer resin insulating layers 150, on this conductor circuit 158D and through hole 160D, form the weld zone 75D that supports pedestal 76D.Here, the diameter of the weld zone 75D of motherboard one side is 600 μ m.
Fig. 2 illustrates the X1-X1 cross section of Fig. 1.That is, Fig. 2 illustrates the cross section of base plate for packaging, and X1-X1 longitudinal section and Fig. 1 among Fig. 2 are suitable.As shown in Figure 2, between the conductor circuit 58U-conductor circuit 58U that constitutes holding wire, form virtual pattern 58M.Here, so-called virtual pattern is meant the existence that does not have electrical connection or capacitor etc., only is the figure on the mechanical sense.
Identical with the base plate for packaging of the above-mentioned prior art of Figure 23, the base plate for packaging of the 1st example, the weld zone little (diameter is 133～177 μ m) of surface (top) configuration of its IC chip one side is so the ratio that the weld zone metal partly accounts for is little.On the other hand, the weld zone big (diameter is 600 μ m) of the surface of motherboard etc. (following) configuration is so the ratio that metal partly accounts for is big.Here, in the base plate for packaging of this example, between conductor circuit 58U, the 58U of the holding wire of IC chip one side that forms base plate for packaging, form virtual pattern 58M, so, metal has partly increased, thereby adjusted the ratio of the metal part of this IC chip one side and motherboard one side, in the manufacturing process and use of base plate for packaging described later, warpage can not take place in base plate for packaging.
Next, specify the manufacture method of base plate for packaging shown in Figure 1 for example.At first, the composition of A. plated by electroless plating with bonding agent, the agent of B. interlayer insulation resin, C. resin filler, D. solder resist is described.
A. prepare the feedstock composition (upper strata bonding agent) of plated by electroless plating with bonding agent
[resin combination 1.]
Cresols type epoxy resin (Japanese chemical drug system with concentration 25%, molecular weight 2500) and the acrylic compound of concentration 80wt% be dissolved in and form resin solution among the DMDG, with this resin solution of 35 Unit Weights, the photo-sensitive monomer of 3.15 Unit Weights (the synthetic system in East Asia, ARONIXM315), the defoamer of 0.5 Unit Weight (the SAMNOPUKO system, S-65) and the NMP of 3.6 Unit Weights obtain after mixing.
[resin combination 2.]
With the average grain diameter of the polyether sulphur (PES) of 12 Unit Weights, 7.2 Unit Weights is that (Sanyo changes into system for the epoxy particles of 1.0 μ m; POLYMERPOLE) and 3.09 Unit Weight average grain diameters be after the epoxy particles of 0.5 μ m mixes; and then add the NMP of 30 Unit Weights, steep with pearl and obtain after mixer (beads mixer) mixes.
[hardener composition 3.]
(four countries change into system with the imidazole hardeners of 2 Unit Weights, 2E4MZ-CN), the light sensitizer of the light initiator (CIBA GEIGY IRUGAKYUA I-907) of 2 Unit Weights, 0.2 Unit Weight (Japanese chemical drug system, DETX-S) and the NMP of 1.5 Unit Weights obtain after mixing.
B. prepare the feedstock composition (lower floor's bonding agent) that the agent of interlayer insulation resin is used
[resin combination 1.]
Cresols type epoxy resin (Japanese chemical drug system with concentration 25%, molecular weight 2500) and the acrylic compound of concentration 80wt% be dissolved in and form resin solution among the DMDG, with this resin solution of 35 Unit Weights, the photo-sensitive monomer of 3.15 Unit Weights (the synthetic system in East Asia, ARONIXM315), the defoamer of 0.5 Unit Weight (the SAMNOPUKO system, S-65) and the NMP of 3.6 Unit Weights obtain after mixing.
[resin combination 2.]
With the average grain diameter of the polyether sulphur (PES) of 12 Unit Weights and 14.49 Unit Weights is that (Sanyo changes into system for the epoxy particles of 0.5 μ m, POLYMERPOLE) after the mixing, and then add the NMP of 30 Unit Weights, steep with pearl and obtain after mixer (beads mixer) mixes.
[hardener composition 3.]
(four countries change into system with the imidazole hardeners of 2 Unit Weights, 2E4MZ-CN), the light sensitizer of the light initiator (CIBA GEIGY IRUGAKYUA I-907) of 2 Unit Weights, 0.2 Unit Weight (Japanese chemical drug system, DETX-S) and the NMP of 1.5 Unit Weights obtain after mixing.
C. prepare the feedstock composition of the usefulness that the resin filler uses
[resin combination 1.]
With the Bisphenol F type epoxy monomer of 100 Unit Weights (oiling snow land (シ エ Le) system, molecular weight 310, YL983U), the surface applied of 170 Unit Weights the average grain diameter of silane bonding agent be the SiO of 1.6 μ m
2Spherical particle (ADOMATEC system, CRS 1101-CE, here the size of the largest particles is below the thickness (15 μ m) of aftermentioned internal layer copper figure) and smoothing agent (the SAMNOPUKO system of 1.5 Unit Weights, PELENOLE S4) mixes, and after under 23 ± 1 ℃ the state viscosity of this mixture being adjusted to 45000～49000cps, obtain.
[hardener composition 2.]
6.5 (four countries change into system to the imidazole hardeners of Unit Weight, 2E4MZ-CN).
D. solder resist composition
After being dissolved in the 50% epoxy radicals propyleneization of cresols type epoxy resin (Japanese chemical drug system) of 60% weight among the DMDG, obtain photonasty oligomer (molecular weight 4000), with the such photonasty oligomer of 46.67 grams, 15.0 gram is dissolved in bisphenol A-type resin (the oiling snow land system of 80% weight in the methyl ethyl ketone, EPICOTE 1001), 1.6 (four countries change into system to the gram imidazole hardeners, 2E4MZ-CN), multivalence acrylic monomer (the Japanese chemical drug system of the photo-sensitive monomer of 3 grams, R604), 1.5 the multivalence acrylic monomer of gram (common prosperity society chemistry system, DPE6A) and 0.71 gram disperse system defoamer (SAMNOPUKO makes, S-65) mix, and then this mixture added two propiophenones (Northeast chemistry is made) of the conduct light initiators of 2 grams and the rice phase Le Shi ketone as light sensitizer of 0.2 gram (Northeast chemistry manufacturing), after under 25 the state viscosity of this mixture being adjusted to 2.0Pas, obtain the solder resist mixture.
Have, Brookfield viscometer (Tokyo gauge, DVL-B type) is used in viscosimetric analysis again, uses rotor No.4 during 60rpm, uses rotor No.3 during 6rpm.
Next, the manufacture method of base plate for packaging 100 is described with reference to Fig. 3～9.
E. the manufacturing of base plate for packaging
(1) at the Copper Foil 32 that by thickness is the two sides lamination 18 μ m of the glass epoxy resin of 1mm or the substrate 30 that BT (Bismaleimide Triazine) resin forms, form copper containing layer lamination 30A, and with it as parent material (with reference to the operation (A) of Fig. 3).At first,, carry out plated by electroless plating again and handle, utilize pattern etching to form internal layer copper figure 34U, 34D and through hole 36 (operation of Fig. 3 (B)) on the two sides of substrate 30 the above-mentioned copper containing layer lamination 30A processing of holing.
(2) substrate 30 that has formed internal layer copper figure 34U, 34D and through hole 36 is washed, after the drying, used NaOH (10g/l), NaClO as oxidation bath (melanism bath)
2(40g/l) and Na
3PO
4(6g/l), use NaOH (10g/l) and NaBH as reducing bath
4(6g/l) carry out OR and handle, formed roughened layer 38 (the operation C of Fig. 3) on the surface of internal layer copper figure 34U, 34D and through hole 36 thus.
(3) will prepare feedstock composition that the resin filler of C uses mixes and obtains the resin filler after mixing.
(4) two sides that was coated in substrate 30 in 24 hours with interior resin filler 40 that obtains after using the spin coated machine with above-mentioned (3) preparation, it is filled between conductor circuit (internal layer copper figure) 34U and the conductor circuit 34U and through hole 36 in, drying is 20 minutes under 70 ℃ condition, to another side, equally the resin filler is filled between the conductor circuit 24 and through hole 36 in, dry 20 minutes (with reference to the operation (D) of Fig. 3) under 70 ℃ condition.
A face of the substrate 30 after (5) processing that utilizes the belt skin grinder that has used the banded pouncing paper of #600 (three are total to the physics and chemistry length of schooling) to grind above-mentioned (4) finishes, make the surface of the contact 36a of the surface of its internal layer copper figure 34U, 34D and through hole 36 not stay resin filler 40, then, polish grinding, be used for removing the scratch that the grinding because of above-mentioned belt skin grinder causes.Another side to substrate carries out so a series of milled processed (operation of Fig. 4 (E)) too.
Secondly, under the condition of 100 ℃, 120 ℃, 150 ℃ and 180 ℃, carry out the heat treated of 1 hour, 3 hours, 1 hour and 7 hours respectively, make 40 sclerosis of resin filler.
So, just obtained a kind of circuit board, this circuit board has not only been removed the skin section of the resin filler 40 that is filled in through hole 36 grades and inner conductor circuit 34U, the roughened layer above the 34D 38, make substrate 30 two sides level and smooth, and, the side of resin filler 40 and inner conductor circuit 34 bonds together securely through roughened layer 38, and in addition, the internal face of through hole 36 and resin filler 40 bond together securely through roughened layer 38.That is, by this operation, the surface that makes the surface of resin filler 40 and internal layer copper figure 34 at grade.
(6) substrate 30 that forms conductor circuit 34U, 34D is carried out alkaline degreasing and soft etching, secondly, use the catalyst solution that forms by palladium bichloride and organic acid to handle, make it have the Pd catalyst, after this catalyst activityization, be immersed in by 3.2 * 10
-2The copper sulphate of mol/l, 3.9 * 10
- 3The nickelous sulfate of mol/l, 5.4 * 10
-2The complex compound catalyst of mol/l, 3.3 * 10
-1The inferior sodium phosphate of mol/l, 5.0 * 10
-1The boric acid of mol/l and the interfacial agent of 0.1g/l (day letter chemical industry system, SURFIL 465) in the plated by electroless plating liquid of the PH=9 that constitutes, flood after 1 minute, make it to carry out vertical and horizontal vibrations, form acicular alloy cover layer and the roughened layer 42 (operation of Fig. 4 (F)) that forms by Cu-Ni-P on the surface of the contact 36A of conductor circuit 34 and through hole 36 with 4 seconds 1 time frequency.
And then, under temperature is 35 ℃, the condition of PH=1.2, make the fluorine boronation tin of 0.1mol/l and the thio urea of 1.0mol/l carry out the Cu-Sn displacement reaction, forming thickness on the surface of roughened layer is the Sn layer (not shown) of 0.3 μ m.
(7) will prepare the feedstock composition that the interlayer insulation resin agent of B uses and mix, and viscosity be adjusted to obtained interlayer insulation resin agent (lower floor with) behind the 1.5Pa.s.
Secondly, the feedstock composition that the plated by electroless plating of preparation A is used with bonding agent mixes, and viscosity is adjusted to obtained plated by electroless plating behind the 7Pa.s with bonding agent (upper strata with).
(8) use viscosity that the spin coated machine obtains from above-mentioned (7) in the coating of the two sides of the substrate of above-mentioned (6) as back 24 hours of the preparation of 1.5Pa.s with interior interlayer insulation resin agent (lower floor with) 44, under level, place after 20 minutes, drying (prebake conditions) is 30 minutes under 60 ℃ condition, secondly, the viscosity that coating obtains from above-mentioned (7) is back 24 hours of the preparation of 7Pa.s with interior photosensitive adhesive agent solution (lower floor with) 46, under level, place after 20 minutes, drying (prebake conditions) is 30 minutes under 60 ℃ condition, and forming thickness is the bonding agent 50d (operation of Fig. 4 (G)) of 35 μ m.
(9) formed the two sides of the substrate of bonding agent in above-mentioned (8), the bonding photomask (not shown) that is printed with the black circle of φ 85 μ m utilizes extra-high-pressure mercury vapour lamp with 500mJ/cm
2Intensity exposure.Again it is developed in DMTG solution, and then, utilize extra-high-pressure mercury vapour lamp to this substrate 30 with 3000mJ/cm
2Intensity exposure, under the condition of 100 ℃, 120 ℃ and 150 ℃, carry out the heat treated (back baking) of 1 hour, 1 hour and 3 hours respectively, thus, the thickness that forms the opening (through hole forms and uses opening) 48 of the dimensional accuracy with the φ 85 μ m that are equivalent to photomask is the interlayer resin insulating layers (2 layers of formation) 50 (with reference to the operation (H) of Fig. 5) of 35 μ m.Have again, expose tin coating (not shown) on the ground, opening 48 tops that becomes through hole.
(10) substrate that will form opening 48 flooded in chromic acid 19 minutes, dissolving is also removed the epoxy particles that has interlayer resin insulating layers 50 surfaces, thus, make the surface coarsening (with reference to the operation (I) of Fig. 5) of this interlayer resin insulating layers 50, then, in neutralization solution (SPRAY society system), wash behind the dipping.
And then, by having handled the surface of this substrate of (the alligatoring degree of depth 6 μ m) and apply the palladium catalyst and handle, make the surface of interlayer resin insulating layers 50 and through hole form catalyst nuclear with the internal face of opening 48 to carrying out asperitiesization.
(11) substrate is immersed in the plated by electroless plating aqueous solution of following composition, forming thickness at whole asperities is the non-cathode copper electroplating film 52 (with reference to the operation (J) of Fig. 5) of 0.6 μ m,
[the plated by electroless plating aqueous solution]
EDTA 150g/l
Copper sulphate 20g/l
HCHO 30g/l
NaOH 40g/l
α, α '-bipyridine 80g/l
PGE 0.1g/l
[plated by electroless plating condition]
Under 70 ℃ solution temperature, carried out 30 minutes
(12) stick commercially available photosensitive dry film on the non-cathode copper electroplating film 52 that in above-mentioned (11), forms, put mask again, with 100mJ/cm
2Intensity exposure, the sodium carbonate with 0.8% carries out development treatment, formation thickness is the plating etchant resist 54 (with reference to the operation (K) of Fig. 5) of 15 μ m.
(13) then, carry out the cathode copper plating to not forming the part of electroplating etchant resist under the following conditions, forming thickness is the cathode copper electroplating film 56 (with reference to the operation (L) of Fig. 5) of 15 μ m.
[the metallide aqueous solution]
Sulfuric acid 180g/l
Copper sulphate 80g/l
Additive (ATOTEX JAPAN system, KAPARASIDO GL)
1ml/l
[metallide condition]
Current density 1A/dm
2
30 minutes time
The temperature room temperature
(14) with 5% KOH peel off removed the plating etchant resist after, mixed liquor with sulfuric acid and hydrogen peroxide carries out etch processes to the plated by electroless plating film under this plating etchant resist 52 again, and its dissolving removed, forming the thickness that is formed by non-cathode copper electroplating film 52 and cathode copper electroplating film 56 is conductor circuit 58U, 58D and through hole 60U, the 60D (with reference to the operation (M) of Fig. 6) of 18 μ m.
(15) carry out and (6) same processing, form the alligatoring face 62 that forms by Cu-Ni-P on the surface of conductor circuit 58U, 58D and through hole 60U, 60D, and then, Sn displacement (with reference to the operation (N) of Fig. 7) is carried out on this surface.
(16), and then form the conductor circuit on upper strata by carrying out the operation of above-mentioned (7)～(15) repeatedly.That is, use spin coated machine insulation resin agent between the overlay of the two sides of substrate 30 (lower floor uses), form insulating compound layer 144.In addition, use the spin coated machine on this insulating compound layer 144, to apply photosensitive adhesive (upper strata is used), form bond layer 146 (with reference to the operation (O) of Fig. 7).Two sides at the substrate 30 that has formed insulating compound layer 144 and bond layer 146, bonding photomask, and expose, develop, formation has the interlayer resin insulating layers 150 of opening (through hole forms with opening 148), then, this interlayer resin insulating layers 150 is made asperities (with reference to the operation (P) of Fig. 7).After this, on the surface of this substrate 30 that has carried out this asperities processing, form non-cathode copper electroplating film 152 (with reference to the operation (Q) of Fig. 8).Next, after plating etchant resist 154 is set on the non-cathode copper electroplating film 152, do not forming formation cathode copper electroplating film 156 (with reference to the operations (R) of Fig. 8) on the part of etchant resist.Then, with KOH peel off remove electroplate etchant resist 154 after, the plated by electroless plating film 152 under this platings etchant resist 154 is removed in dissolving, formation conductor circuit 158U, 158D and through hole 160U, 160D (with reference to the operation (S) of Fig. 8).Then, form alligatoring face 162, on the surface of this alligatoring face 162, form roughened layer 162 (operation 9 (T) of Fig. 9) again on the surface of conductor circuit 158 and through hole 160.But the alligatoring face 162 that the surface at this conductor circuit 158 and through hole 160 is formed does not carry out the Sn displacement.
(17) apply the thick above-mentioned D. of 45 μ m on the two sides of the substrate 30 that obtains from above-mentioned (16) solder resist composition 70 α have been described.Then, after 70 ℃ of 20 minutes and 70 ℃ of dried of 30 minutes, the photomask (not shown) that the bonding thickness that is decorated with circular pattern (sheltering pattern) is 5mm is with 1000mJ/cm
2The ultraviolet exposure of intensity carries out the DMTG development treatment.Then, under the condition of 80 ℃, 100 ℃, 120 ℃ and 150 ℃, carry out the heat treated of 1 hour, 1 hour, 1 hour and 3 hours respectively, be formed on the solder mask (thickness 20 μ m) 70 (with reference to the operation (U) of Fig. 9) that weld zone part (comprising through hole and contact on every side) has opening (aperture 200 μ m) 71.
(18) secondly, with this substrate 30 by 2.31 * 10
-1The nickel chloride of mol/l, 2.8 * 10
-1The inferior sodium phosphate of mol/l, 1.85 * 10
-1Dipping is 20 minutes in the non-electrolytic nickel electroplate liquid of the PH=4.5 that the lemon sodium of mol/l constitutes, and forming thickness at peristome 71 is the nickel electrodeposited coating 72 of 5 μ m.And then, under 80 ℃ condition, with this substrate 30 by 4.1 * 10
-2The potassium auricyanide of mol/l, 1.87 * 10
-1The ammonium chloride of mol/l, 1.16 * 10
-1The natrium citricum of mol/l and 1.7 * 10
-1Flood 7 minutes 20 seconds in the non-electrolytic gold plating bath that the inferior sodium phosphate of mol/l constitutes, forming thickness on nickel coating is the Gold plated Layer 74 of 0.03 μ m, thus, on through hole 160U, 160D and conductor circuit 158U, 158D, form weld zone 75U, 75D (with reference to Fig. 1).
(19) then, on the peristome 71 of solder mask 70, brush soldering paste, and under 200 ℃ condition, reflux (reflow), thus, form pedestal (welding body) 76U, 76D, form base plate for packaging 100 (with reference to Fig. 1) at last.
Have again, in above-mentioned example, show the example of the base plate for packaging that utilizes the formation of half additive method, but formation of the present invention also is applicable to the base plate for packaging that utilizes full additive method to form certainly.
In the 1st example, between the conductor circuit 58U that forms between interlayer resin insulating layers 50 and the interlayer resin insulating layers 150, form virtual pattern 58M, between the internal layer copper figure 34D that forms on the chip substrate 30 or between outermost layer conductor circuit 158U, form virtual pattern 58M but also can replace.
As mentioned above, in the base plate for packaging of the 1st example, between the conductor circuit of the holding wire of IC chip one side that forms base plate for packaging, form virtual pattern, increase the metal part of IC chip one side of base plate for packaging, adjust the ratio of the metal part of this IC chip one side and motherboard one side, therefore, in the manufacturing and use of base plate for packaging, warpage can not take place.
(the 2nd example)
The formation of the base plate for packaging of the 2nd example of the present invention is described with reference to Figure 10～Figure 12.Figure 10 illustrates the sectional view of the base plate for packaging of the 2nd example.Figure 11 (A) illustrates the plane of base plate for packaging, Figure 11 (B) illustrates the bottom surface of the IC chip that is installed on this base plate for packaging, and Figure 12 is illustrated in and will under the state of IC chip 80 devices on base plate for packaging shown in Figure 10 base plate for packaging be installed in the cross section of the state on the motherboard 90.This base plate for packaging as shown in Figure 12, be provided with above and be used for the pedestal 76U that is connected with weld zone 82 1 sides of IC chip 80, below a side be provided with and be used for the weld zone 76D that is connected with the pedestal 92 of motherboard 90, play between IC chip 80 and motherboard 90, to transmit signal etc. and the power supply that comes from motherboard supplied with and carry out relaying.
As shown in Figure 10, on the chip substrate 30 of base plate for packaging and below formation become internal layer copper figure 34U, the 34D of ground plane.In addition, get involved conductor circuit 58U and the through hole 60U that interlayer resin insulating layers 50 forms as holding wire on the upper strata of the 34U of internal layer copper figure, through hole 60 connects these interlayer resin insulating layers 50.On the upper strata of conductor circuit 58U, form outermost layer conductor circuit 158U, virtual pattern 159 and connect the through hole 160U of this interlayer resin insulating layers 150 by interlayer resin insulating layers 150.This virtual pattern 159 is in the periphery of conductor circuit 158U shown in Figure 11, promptly form along the periphery of base plate for packaging.On this conductor circuit 158U and through hole 160U, form the weld zone 75U that supports pedestal 76U.Here, the diameter of the weld zone 75U of IC chip one side is 120～170 μ m.
On the other hand, the conductor circuit 58D that the upper strata of the ground plane of side (internal layer copper figure) 34D forms as holding wire through interlayer resin insulating layers 50 below chip substrate 30.Upper strata at this conductor circuit 58D, form outermost layer conductor circuit 158D and the through hole 160D that connects this interlayer resin insulating layers 150 by interlayer resin insulating layers 150, on this conductor circuit 158D and through hole 160D, form the weld zone 75D that supports pedestal 76D.Here, the diameter of the weld zone 75D of motherboard side is 600～700 μ m.
Figure 11 (A) is the plane graph of base plate for packaging 200, promptly is that the A of Figure 10 vows view.Here, the X2-X2 longitudinal section of suitable Figure 11 of Figure 10 (A).As Figure 11 (A) and shown in Figure 10,, form the virtual pattern 159 of width 10mm in the lower floor of solder mask 70 in the periphery of the conductor circuit 158U that constitutes holding wire.Here, so-called virtual pattern is meant the existence that does not have electrical connection or capacitor etc., only is the figure on the mechanical sense.
Identical with the base plate for packaging of the above-mentioned prior art of Figure 23, in the base plate for packaging of the 2nd example, the weld zone 76U little (diameter is 120～170 μ m) of the surface (top) of its IC chip 80 1 sides configuration is so the ratio that the weld zone metal partly accounts for is little.On the other hand, the weld zone 75D big (diameter is 600～700 μ m) of the surface (following) of motherboard 90 sides configuration is so the ratio that metal partly accounts for is big.Here, in the base plate for packaging of this example, periphery at the outermost layer conductor circuit 158U of the IC of base plate for packaging chip one side forms virtual pattern 159, so, the metal by the IC chip side of base plate for packaging has partly increased, thereby adjusted the ratio of the metal part of this IC chip one side and motherboard one side, simultaneously, improved the mechanical strength of base plate for packaging periphery because of the effect of metal virtual pattern 159, in the manufacturing and use of base plate for packaging described later, warpage can not take place in base plate for packaging.
Figure 11 (A) illustrates the plane graph (A of Figure 10 vows view) of completed base plate for packaging, and Figure 11 (B) illustrates the ground plan of IC chip.Make this base plate for packaging 100 under the state that loads IC chip 80, pass through reflow ovens, as shown in figure 12, this IC chip is installed through pedestal 76U.Then, the base plate for packaging 100 that the IC chip has been installed is installed on the motherboard 90, makes it pass through reflow ovens, carry out of the installation of this base plate for packaging 100 thus to motherboard 90.
The manufacture method of the base plate for packaging of the 2nd example～the 5th example described later is the same with above-mentioned the 1st example that illustrated with reference to Fig. 3～Fig. 9, its explanation of Therefore, omited.
Have again, in above-mentioned the 2nd example, though be on interlayer resin insulating layers 150 outermost conductor circuit 158U around formed virtual pattern 159, also can replace and around internal layer copper figure 34D that forms on the chip substrate 30 or the conductor circuit 58U between interlayer resin insulating layers 50-interlayer resin insulating layers 150, form virtual pattern 159.
In the base plate for packaging of the 2nd example of above explanation, around the conductor circuit of the IC of base plate for packaging chip one side, form virtual pattern, the metal of IC chip one side of base plate for packaging has partly increased, thereby adjusted the ratio of the metal part of this IC chip one side and motherboard one side, in the manufacturing and use of base plate for packaging, warpage can not take place in base plate for packaging.
(the 3rd example)
The formation of the base plate for packaging of the 3rd example of the present invention is described with reference to Figure 13.
Formation forms the internal layer copper figure 34D as holding wire below as the internal layer copper figure 34U of holding wire on the chip substrate 30 of base plate for packaging 300.In addition, the conductor circuit 58U that forms as bus plane through interlayer resin insulating layers 50 on the upper strata of internal layer copper figure 34U.On the upper strata of this conductor circuit 58U, form outermost conductor circuit 158U and the through hole 160U that connects this interlayer resin insulating layers 150 through interlayer resin insulating layers 150, on this through hole 160U, form pedestal 76U.That is, in the 3rd example, on the through hole 160U that is installed on the conductor circuit 58U that forms bus plane, form pedestal 76U, this bus plane directly is connected with outside weldings salient point (not shown).
On the other hand, the upper strata of the holding wire of a side below chip substrate 30 (internal layer copper figure) 34D becomes the conductor circuit 58D of ground plane through interlayer resin insulating layers 50.On the upper strata of this conductor circuit 58U, form the through hole 160D of outermost conductor circuit 158D and this interlayer resin insulating layers 150 of perforation through interlayer resin insulating layers 150.On this through hole 160D, form pedestal 76D.That is, in this example, on the through hole 160D that is installed on the conductor circuit 58D that forms ground plane, form pedestal 76D, this ground plane directly is connected with outside weldings salient point (not shown).
The formation of this example is, to be configured in and support outermost layer conductor circuit 158U, the conductor circuit 58U of the downside of the interlayer resin insulating layers 150 of 158D, 58D is as bus plane, ground plane, through hole 160U, 160D directly is connected this conductor circuit 58U, on the 58D, on this through hole, form pedestal 76U, 76D, so bus plane or ground plane with do not need being connected of pedestal the wiring, therefore, can not be subjected to the influence that causes because of the noise that overlaps in the wiring, can be reduced in and give and accept signal between integrated circuit and the motherboard and the power supply that comes from motherboard one side supplied with The noise when carrying out relaying.In addition, just because of some place does not need wiring, so can seek the densification of circuit board.Have again, in the multi-layer printed wiring base plate of this example, respectively with conductor circuit 58U, 58D as bus plane and ground plane, but conductor circuit 58U or conductor circuit 58D also can be in one decks, with the conductor circuit that plays the conductor circuit of bus plane effect and play the ground plane effect formation that pieces together.
Next the multi-layer printed wiring base plate of the variation of the 3rd example is described with reference to Figure 14.
Figure 14 is the sectional view of formation of the multi-layer printed wiring base plate of expression the 2nd example of the present invention.On chip substrate 230 and below formation become internal layer copper figure 234U, the 234D of ground plane.That is, utilize ground plane (internal layer copper figure) 234U and ground plane (internal layer copper figure) 234D that substrate 230 is clipped in the middle to form capacitor.
In addition, the conductor circuit 258U that forms as holding wire through interlayer resin insulating layers 250 on the upper strata of internal layer copper figure 234U.On the upper strata of this conductor circuit 258U, form the through hole 360U that connects interlayer resin insulating layers 350, on this through hole 360U, form pedestal 376U.
On the other hand, the upper strata of the ground plane of side below substrate 230 (internal layer copper figure) 234D becomes the conductor circuit 258D of holding wire through interlayer resin insulating layers 250.On the upper strata of this conductor circuit 258D, become the conductor circuit 388D of bus plane through interlayer resin insulating layers 350.On the upper strata of this conductor circuit 388D, form the through hole 380D that connects interlayer resin insulating layers 390, on this through hole 380D, form pedestal 376D.That is, in this example, on the through hole 380D that is installed on the conductor circuit 388D that forms bus plane, form pedestal 376D, this bus plane directly is connected with outside weldings salient point (not shown).
The formation of the variation of the 3rd example is, through hole 380D directly is connected on the conductor circuit 388D that constitutes bus plane, on this through hole, form pedestal 376D, so bus plane with do not need being connected of pedestal the wiring, therefore, can not be subjected to the influence that causes because of the noise that overlaps in the wiring.
As mentioned above, in the base plate for packaging of the 3rd example, to support the inner conductor circuit of insulating barrier lower floor of outermost layer conductor circuit as bus plane and/or ground plane, through hole directly is connected on the 2nd conductor circuit, on this through hole, form pedestal, so bus plane or ground plane with do not need being connected of pedestal the wiring, therefore, can not be subjected to the influence that causes because of the noise that overlaps in the wiring, in addition, just because of some place does not need wiring, so can seek the densification of circuit board.
In addition, in the base plate for packaging of the 3rd example, to be configured in the 2nd conductor circuit of downside of the 2nd interlayer resin insulating layers that supports the outermost layer conductor circuit as bus plane and/or ground plane, through hole directly is connected on the 2nd conductor circuit, on this through hole, form pedestal, so bus plane or ground plane with do not need being connected of pedestal the wiring, therefore, can not be subjected to the influence that causes because of the noise that overlaps in the wiring, in addition, just because of some place does not need wiring, so can seek the densification of circuit board.
(the 4th example)
The formation of the base plate for packaging of the 4th example of the present invention is described with reference to Figure 15.On the chip substrate 30 of base plate for packaging 400 and below formation become internal layer copper figure 34U, the 34D of ground plane.In addition, become the conductor circuit 58U of holding wire through interlayer resin insulating layers 50, and connect this interlayer resin insulating layers 50 formation through hole 60U on the upper strata of internal layer copper figure 34U.On the upper strata of this conductor circuit 58U, form outermost layer conductor circuit 158U and the through hole 160U that connects this interlayer resin insulating layers 150 through interlayer resin insulating layers 150, on this conductor circuit 158U, through hole 160U, form the weld zone 75U that supports pedestal 76U.Here, the diameter of the weld zone 75U of IC chip one side is 133～177 μ m.
On the other hand, the upper strata of the internal layer copper figure 34D of a side below substrate 30 becomes the conductor circuit 58D of holding wire through interlayer resin insulating layers 50.On the upper strata of this conductor circuit 58D, form outermost layer conductor circuit 158D and the through hole 160D that connects this interlayer resin insulating layers 150 through interlayer resin insulating layers 150, on this conductor circuit 158D, through hole 160D, form the weld zone 75D that supports pedestal 76D.The diameter of the weld zone 75D of this motherboard one side is 600 μ m.In addition, dispose ground connection (electrode) layer on internal layer copper figure 34U, the 34D of subtend configuration, utilize two internal layer copper 34U, 34D to form capacitor in that chip substrate 30 is clipped in the middle.
Figure 16 (A) is the plane graph of the internal layer copper figure 34U that forms on chip substrate 30.On this internal layer copper figure 34U, form and be used for contact-weld zone 41 of being connected with lower floor one side with upper strata one side.Figure 16 (B) is the figure after the contact-weld zone in the zone shown in the B among Figure 16 (A) 41 is amplified.The X3-X3 cross section of Figure 16 (B) is equivalent to the X3-X3 cross section of Figure 15 (B).
Such shown in Figure 16 (B), this contact-weld zone 41 is that the weld zone 41b that the contact 41a of through hole shown in Figure 15 36 is connected with through hole 60U with the interlayer resin insulating layers 50 that connects the upper strata is made of one formation, the buffer insulation band 43 that disposes the about 200 μ m of width on every side in this contact one weld zone 41.
Here, in the base plate for packaging of this example, such shown in Figure 16 (B), contact 41a and weld zone 41b are made of one, and this contact 41a is not connected by wiring with weld zone 41b, so, shortened the transfer path between the conductor circuit 58U of upside of lower floor (the conductor circuit 58D of lower floor's one side of chip substrate 30) and upper strata (interlayer resin insulating layers 50), the transfer rate of signal can be improved, simultaneously, resistance value can be reduced.In addition, because of this contact 41a is not connected by wiring with weld zone 41b, so not as the base plate for packaging of the prior art shown in above-mentioned Figure 24 (A), stress concentrate on connect up and contact and wiring and weld zone between connecting portion, therefore, can in base plate for packaging, not break owing to the concentrating the crack that produces of stress.At this, the internal layer copper figure 34U to chip substrate 30 upsides illustrates and illustrates, and the formation of the internal layer copper figure 34D of downside too.
Next, the base plate for packaging of the variation of the invention process form is described with reference to Figure 17 and Figure 18.In above-mentioned the 4th example shown in Figure 15, form ground plane (electrode layer) 34G and contact-weld zone 41 being formed on internal layer copper figure 34U, the 34D on chip substrate 30 two sides.Different therewith, the same with the situation shown in Figure 16 (A) in the 2nd example, on the conductor circuit 58U, the 58D that are formed at interlayer resin insulating layers 50 upper stratas, form bus plane (electrode layer) 58G and contact-weld zone 61.
Figure 17 is the sectional view of base plate for packaging of the variation of the 4th example, and Figure 18 (A) is the plane graph of the conductor circuit 58U that forms on interlayer resin insulating layers 50.On this conductor circuit 58U, form bus plane 58G and the contact-weld zone 61 that is used for being connected with lower floor one side with upper strata one side.Figure 18 (B) is the figure after the contact-weld zone in the zone shown in the B among Figure 18 (A) 61 is amplified.The X4-X4 cross section of Figure 18 (B) is suitable with the X4-X4 cross section of Figure 17.
As shown in Figure 17, this contact-weld zone 61 weld zone 61b that to be contact 61a of the through hole 60U that will be connected with internal layer copper figure 34U be connected with through hole 160U with the interlayer resin insulating layers 150 that connects the upper strata is made of one formation, shown in Figure 18 (B), like that, around this contact-weld zone 61, dispose the buffer insulation band 63 of the about 200 μ m of width.
In the base plate for packaging of the variation of the 4th example, contact 61a and weld zone 61b are made of one, this contact 61a is not connected by wiring with weld zone 61b, so, shortened the transfer path between the conductor circuit 158U of upside of lower floor (the internal layer copper figure 34U of upper strata one side of chip substrate 30) and upper strata (interlayer resin insulating layers 150), the transfer rate of signal can be improved, simultaneously, resistance value can be reduced.In addition, because of this contact 61a is not connected by wiring with weld zone 61b, so not as the base plate for packaging of the prior art shown in above-mentioned Figure 24 (A), stress concentrate on connect up and contact and wiring and weld zone between connecting portion, therefore, can in base plate for packaging, not break owing to the concentrating the crack that produces of stress.
Have again, in above-mentioned example, be made of one forming circular contact and weld zone, but, also the contact and the weld zone of various shapes such as ellipse, polygon can be made of one for the present invention.
As mentioned above, in the base plate for packaging of the 4th example, contact is not connected by wiring with the weld zone, so, shortened the transfer path between the conductor circuit (conductor layer) on lower floor and upper strata, can improve the transfer rate of signal, simultaneously, can reduce resistance value.In addition, because of this contact is not connected by wiring with the weld zone, so stress do not concentrate on connect up and contact and wiring and weld zone between connecting portion, therefore, the crack that can produce owing to concentrating of stress and in base plate for packaging, not breaking.
(example 5)
The formation of the base plate for packaging of the 5th example of the present invention is described with reference to Figure 19 and Figure 20.Figure 19 illustrate its cross section the 5th example base plate for packaging 500 as shown in figure 20, constitute the form of so-called integrated circuit encapsulation, load in the above under the state of IC chip 80 it be installed on the motherboard 90.
On the chip substrate 30 of base plate for packaging and below on become internal layer copper figure 34U, the 34D of ground plane.In addition, become the conductor circuit 58U of holding wire through interlayer resin insulating layers 50, and connect this interlayer resin insulating layers 50 formation through hole 60U on the upper strata of internal layer copper figure 34U.On the upper strata of this conductor circuit 58U, form outermost layer conductor circuit 158U and the through hole 160U that connects this interlayer resin insulating layers 150 through interlayer resin insulating layers 150, on this conductor circuit 158U, through hole 160U, form the weld zone 75U that supports pedestal 76U.Here, the diameter of the weld zone 75U of IC chip one side is 133～177 μ m.
On the other hand, the upper strata of the ground plane of a side below chip substrate 30 (internal layer copper figure) 34D becomes the conductor circuit 58D of holding wire through interlayer resin insulating layers 50.On the upper strata of this conductor circuit 58D, form outermost layer conductor circuit 158D and the through hole 160D that connects this interlayer resin insulating layers 150 through interlayer resin insulating layers 150, on this through hole 160D, form the weld zone 75D that supports pedestal 76D.Here, the diameter of the weld zone 75D of motherboard one side is 600 μ m.
In the base plate for packaging of the 5th example, by on through hole 160D, forming the pedestal 76D of motherboard 60 1 sides, pedestal directly is connected with through hole, so, even the crack appears in base plate for packaging, between pedestal 76D and through hole 160D, can not break yet.Promptly, in the base plate for packaging 600 of the prior art shown in above-mentioned Figure 23 (B), 378 pedestal 375D is connected with through hole 360 by connecting up, this weld zone 375D goes up and places pedestal 376D, so, when crack L2 appears in inside, because of the event of this crack L2 wiring of connecting through hole 376D and pedestal 376D sometimes disconnects, the disconnection that is connected of pedestal 376D and through hole 360D.In contrast, in the base plate for packaging of the 5th example,, between pedestal 76D and through hole 160D, can not break because of the crack even the crack occurs yet.
Next, illustrate IC chip 80 is installed to situation on the base plate for packaging 500 of the 5th example shown in Figure 19.As shown in figure 20, the weld zone 76U that IC chip 80 is placed on base plate for packaging 500 goes up and makes the weld zone 82 of this IC chip 80 corresponding with it, make it pass through heating furnace, the weld zone 76U of base plate for packaging 500 is melted on the weld zone 82 of IC chip 80, therefore, base plate for packaging 500 and IC chip 80 have just linked together.
Then, the solder flux that oozes out is carried out purified treatment when utilizing heating to make weld zone 76U be melted on the weld zone 82 and it is solidified.At this,, remove deflux with the gap of vinyl chloride organic solvents such as (chloroethene) injection base plate for packaging 500 and IC chip 80.Then, resin is filled in the gap of base plate for packaging 500 and IC chip 80, carries out resin fill.Simultaneously, entire I C chip 80 is carried out molding, arrive this, the installing of IC chip 80 with resin.
Next, base plate for packaging 500 is installed on the motherboard 90.The weld zone 92 of motherboard 90 and the weld zone 76D of base plate for packaging 500 are placed accordingly, make it pass through heating furnace, the weld zone 76U of base plate for packaging 500 is melted on the weld zone 82 of IC chip 80, and therefore, base plate for packaging 500 and IC chip 90 have just linked together.Then, resemble as shown in Figure 20, resin 94 is filled in the gap of base plate for packaging 500 and motherboard 90, carry out resin-sealedly, install to this.
Below, the base plate for packaging 501 of the variation of the 5th example of the present invention is described with reference to Figure 20 and Figure 21.
In the base plate for packaging 500 of above-mentioned the 5th example shown in Figure 19,1 through hole 160D goes up and places 1 pedestal 76D.Different therewith, such as shown in figure 21 in the base plate for packaging 500 of the 5th example, on a plurality of (3) through hole 260,260,260, place 1 pedestal 276.Promptly, such shown in Figure 22 suitable (the X5-X5 hatching of the suitable Figure 21 of X6-X6 hatching among Figure 22) with the X5-X5 cross section of Figure 21, through hole 260 is to be made of 3 mutual close through holes, on the shared contact 260a of this 3 through holes 260, form nickel coating 72 and Gold plated Layer 74, thereby form 1 big contact 275.And, on this big contact 275, place big pedestal 276.
In the base plate for packaging 501 of the variation of the 5th example, form on through hole 260 by pedestal 276, pedestal 276 directly is connected, therefore with through hole 260, even for example in base plate for packaging 501, the crack occurs, can not break between pedestal 276 and the through hole 260 yet.In addition, because of pedestal 276 forms on a plurality of through holes 260,260,260, even 1 and conductor circuit 58D disconnection in a plurality of through hole also can utilize remaining through hole that pedestal 276 is connected with conductor circuit 58D, so, can realize anti-invalidation functions.
In addition, as mentioned above, the diameter of the weld zone 75U of IC chip 80 1 sides is 133～170 μ m, and the diameter of the weld zone 75D of motherboard one side is 6000 μ m, and size differs 4～5 times, and the big weld zone 75D that forms motherboard one side on 1 through hole is very difficult.Therefore, in the base plate for packaging 501 of the variation of the 5th example, pedestal 276 is formed on a plurality of through holes 260,260,260, form big pedestal according to this.Here, in above-mentioned variation, on 3 through holes, form 1 pedestal, but also can on the through hole more than 2 or 4, form 1 pedestal.
As mentioned above, in the base plate for packaging of the variation of the 5th example, on through hole, form by making pedestal, pedestal directly is connected with through hole, therefore, even the crack appears in base plate for packaging, can not break between pedestal 276 and the through hole 260 yet.In addition,,, also can utilize remaining through hole that pedestal is connected with through hole even 1 in a plurality of through hole for example disconnects in inside because of pedestal 276 forms on a plurality of through holes, so, can realize anti-invalidation functions.This external cause pedestal forms on a plurality of through holes, so can form the weld zone bigger than through hole.
In above-mentioned example, enumerated base plate for packaging has been directly installed on example on the motherboard, but, also can use base plate for packaging of the present invention with being well suited for for base plate for packaging being connected situation on the motherboard by daughter board.
Claims (1)
1. base plate for packaging, form the multi-layer conductive circuit through the multilayer interlayer resin insulating layers, on the surface that IC chip one side is installed be connected on the surface of other substrate one side and form pedestal, be connected at this and carry out resin-sealedly between surface of the side on other substrate and this other substrate, it is characterized in that:
On the through hole of the outermost layer interlayer resin insulating layers that connects a side that is connected with other substrate, formed this and be connected to the pedestal of the side surface on other substrate.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP303694/1997 | 1997-10-17 | ||
| JP9303694A JPH11121932A (en) | 1997-10-17 | 1997-10-17 | Multilayered wiring board and multilayered printed wiring board |
| JP312687/1997 | 1997-10-29 | ||
| JP312686/1997 | 1997-10-29 | ||
| JP343815/1997 | 1997-11-28 | ||
| JP361947/1997 | 1997-12-10 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100456190A Division CN100426491C (en) | 1997-10-17 | 1998-09-28 | Package substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1897264A CN1897264A (en) | 2007-01-17 |
| CN100431144C true CN100431144C (en) | 2008-11-05 |
Family
ID=17924125
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101018385A Expired - Lifetime CN100431144C (en) | 1997-10-17 | 1998-09-28 | Package substrate |
| CN 200610100699 Expired - Lifetime CN101013685B (en) | 1997-10-17 | 1998-09-28 | Package substrate |
| CN 200710085293 Expired - Lifetime CN100547780C (en) | 1997-10-17 | 1998-09-28 | Base plate for packaging |
| CN 200610101861 Pending CN1901180A (en) | 1997-10-17 | 1998-09-28 | Package substrate |
| CN 200610094490 Expired - Lifetime CN1909226B (en) | 1997-10-17 | 1998-09-28 | Package substrate |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610100699 Expired - Lifetime CN101013685B (en) | 1997-10-17 | 1998-09-28 | Package substrate |
| CN 200710085293 Expired - Lifetime CN100547780C (en) | 1997-10-17 | 1998-09-28 | Base plate for packaging |
| CN 200610101861 Pending CN1901180A (en) | 1997-10-17 | 1998-09-28 | Package substrate |
| CN 200610094490 Expired - Lifetime CN1909226B (en) | 1997-10-17 | 1998-09-28 | Package substrate |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH11121932A (en) |
| CN (5) | CN100431144C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4723178B2 (en) * | 2003-10-28 | 2011-07-13 | エルピーダメモリ株式会社 | Memory system and memory module |
| TWI463925B (en) | 2011-07-08 | 2014-12-01 | Unimicron Technology Corp | Package substrate and fabrication method thereof |
| US10665523B2 (en) * | 2018-07-17 | 2020-05-26 | Advance Semiconductor Engineering, Inc. | Semiconductor substrate, semiconductor package, and method for forming the same |
| CN111629536B (en) * | 2020-05-22 | 2023-10-27 | 东莞联桥电子有限公司 | Pressing manufacturing method of even number multilayer circuit board |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273243A (en) * | 1994-03-30 | 1995-10-20 | Toshiba Corp | Semiconductor package |
| JPH08306743A (en) * | 1995-04-27 | 1996-11-22 | Nec Corp | Semiconductor package and semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866507A (en) * | 1986-05-19 | 1989-09-12 | International Business Machines Corporation | Module for packaging semiconductor integrated circuit chips on a base substrate |
| US4963697A (en) * | 1988-02-12 | 1990-10-16 | Texas Instruments Incorporated | Advanced polymers on metal printed wiring board |
| JPH08236654A (en) * | 1995-02-23 | 1996-09-13 | Matsushita Electric Ind Co Ltd | Chip carrier and manufacture thereof |
-
1997
- 1997-10-17 JP JP9303694A patent/JPH11121932A/en active Pending
-
1998
- 1998-09-28 CN CNB2006101018385A patent/CN100431144C/en not_active Expired - Lifetime
- 1998-09-28 CN CN 200610100699 patent/CN101013685B/en not_active Expired - Lifetime
- 1998-09-28 CN CN 200710085293 patent/CN100547780C/en not_active Expired - Lifetime
- 1998-09-28 CN CN 200610101861 patent/CN1901180A/en active Pending
- 1998-09-28 CN CN 200610094490 patent/CN1909226B/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273243A (en) * | 1994-03-30 | 1995-10-20 | Toshiba Corp | Semiconductor package |
| JPH08306743A (en) * | 1995-04-27 | 1996-11-22 | Nec Corp | Semiconductor package and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1901180A (en) | 2007-01-24 |
| CN1909226B (en) | 2012-09-26 |
| JPH11121932A (en) | 1999-04-30 |
| CN100547780C (en) | 2009-10-07 |
| CN1909226A (en) | 2007-02-07 |
| CN101017806A (en) | 2007-08-15 |
| CN101013685B (en) | 2012-05-09 |
| CN1897264A (en) | 2007-01-17 |
| CN101013685A (en) | 2007-08-08 |
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