CN100428481C - Thin film transistor array base board and its repairing method - Google Patents
Thin film transistor array base board and its repairing method Download PDFInfo
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- CN100428481C CN100428481C CNB2007100402067A CN200710040206A CN100428481C CN 100428481 C CN100428481 C CN 100428481C CN B2007100402067 A CNB2007100402067 A CN B2007100402067A CN 200710040206 A CN200710040206 A CN 200710040206A CN 100428481 C CN100428481 C CN 100428481C
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- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 14
- 239000002184 metal Substances 0.000 claims abstract description 33
- 230000008439 repair process Effects 0.000 claims description 59
- 238000003698 laser cutting Methods 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 abstract description 3
- 238000003466 welding Methods 0.000 description 41
- 239000010410 layer Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 101100214497 Solanum lycopersicum TFT5 gene Proteins 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The basal plate of film transistor array includes following parts: multiple gated scanning wires extended along first direction; multiple data wires extended along second direction, pixel area formed between crossed gated scanning wires and data wires; thin film transistors and pixel electrodes setup inside pixel area; being distributed on two sides of data wires, inner and outer sided shading wires formed on same metal layer to the gated scanning wires; there is at least one lug at one end of the outer shading wire or data wire, and the lug makes overlap between data wire and outer sided shading wire; the other end of outer sided shading wire and one end of repairing wire crossing gated scanning wire are overlapped; the other end of the repairing wire and the repairing pad overlapped with gated scanning wire are overlapped. The invention can be in use for repairing defects of open circuit and short circuit of data wires.
Description
Technical field
The present invention relates to a kind of array base palte and restorative procedure thereof, but particularly relate to a kind of repair data line opens circuit or the liquid crystal display of short circuit is used thin-film transistor array base-plate and restorative procedure thereof.
Background technology
Tft liquid crystal show (TFT-LCD) panel be utilize thin-film transistor (TFT) thus the power of the orientation control printing opacity of control liquid crystal molecule is come display image.A complete TFTLCD panel generally includes module backlight, polaroid, tft array infrabasal plate, CF (color film) upper substrate, is clipped in layer of liquid crystal molecule and drive circuit between the upper and lower base plate.Viewing area on the tft array substrate comprises a plurality of subpixel area, each subpixel area is generally two controlling grid scan lines and two data wires and intersects formed rectangle or other shape area, be provided with thin-film transistor and pixel electrode in it, thin-film transistor serves as switch element.
Controlling grid scan line and data wire are mainly used to provide signal of video signal to drive pixel electrode, the influence of manufacturing process such as film forming, little shadow, etching in the time of still owing to making, and controlling grid scan line and data wire open circuit or short circuit easily, cause line defect.In addition, because length-width ratio, data wire generally designs narrowlyer than controlling grid scan line, easier situation about opening circuit.Therefore, be to avoid the production of LCD panel owing to the yield that line defect causes descends, need to line defect particularly the most incidental data wire open circuit and circuit defect is repaired.
For this reason, U.S. Pat 20050285989 discloses a kind of to data wire the open circuit structure and the restorative procedure thereof of the liquid crystal display substrate repaired, the structure of this tft array substrate as shown in Figure 1, TFT substrate 11 comprise in one direction the controlling grid scan line 2 that extends and with the upwardly extending data wire 6 in the side of controlling grid scan line 2 perpendicular; Controlling grid scan line 2 and data wire 6 intersect to form pixel region, are provided with TFT5 and transparent pixels electrode 9 in it, and pixel electrode 9 is connected by the source electrode of contact hole 9a and TFT5, wherein data wire 6 contain at least two with the overlapping projection 6a of shading line 2a; Shading line 2a and 2a-2 are positioned at the both sides of data wire 6; Wherein controlling grid scan line 2, shading line 2a and 2a-2 are formed on the first metal layer; data wire 6 is formed on second metal level; the first metal layer directly is deposited on the glass substrate; deposit first protective layer then successively; amorphous silicon layer; second metal level, second protective layer and ITO pixel electrode layer.If opening circuit, data wire occurs in 12 places among Fig. 1, just can utilize shading line 2a that the situation that data wire 6 opens circuit is repaired, only need carry out twice laser welding during reparation at the lap (laser radiation part 10) of projection 6a and shading line 2a and just can open circuit and repair data wire.But adopt above technology to have its shortcoming, what this technology can only repairing pixel interval censored data line opens circuit, if be short-circuited on the open circuit intersection that occurs in data wire and controlling grid scan line or the data wire, then can not repair.
Summary of the invention
A kind of repair data line opens circuit or the thin-film transistor array base-plate and the restorative procedure thereof of short circuit but the technical problem to be solved in the present invention provides.
The invention provides a kind of thin-film transistor array base-plate, comprise many controlling grid scan lines that extend along first direction; Many the data wires that extend along second direction, controlling grid scan line and data wire intersect to form pixel region; Be arranged on thin-film transistor and pixel electrode in the pixel region; Be formed on the same metal level of controlling grid scan line on inboard shading line and outside shading line, and be distributed in the both sides of data wire; One end of wherein said outside shading line or data wire has one first projection at least, described first projection overlaps data wire and outside shading line, the other end of outside shading line overlaps with a end across the reparation line of controlling grid scan line, and what the other end of repairing line and data wire overlapped first repairs the liner overlapping.
The invention provides a kind of method of repairing thin-film transistor array base-plate, comprise many controlling grid scan lines that are formed on the first metal layer and extend along first direction; Many data wires that are formed on second metal level and extend along second direction, controlling grid scan line and data wire intersect to form pixel region; Be arranged on thin-film transistor and pixel electrode in the pixel region; Be formed on the same metal level of controlling grid scan line on inboard shading line and outside shading line, and be distributed in the both sides of data wire; One end of wherein said outside shading line or data wire has one first projection at least, described first projection overlaps data wire and outside shading line, the other end of outside shading line overlaps with a end across the reparation line of controlling grid scan line, and what the other end of repairing line and data wire overlapped first repairs the liner overlapping; When data wire opens circuit, shine connection at above-mentioned four overlapping places with laser, make data wire repair liner and connect by outside shading line, reparation line and first, form the path that gets around the part that opens circuit.
The present invention also provides a kind of method of repairing thin-film transistor array base-plate, comprises many controlling grid scan lines that are formed on the first metal layer and extend along first direction; Many data wires that are formed on second metal level and extend along second direction, controlling grid scan line and data wire intersect to form pixel region; Be arranged on thin-film transistor and pixel electrode in the pixel region; Be formed on the same metal level of controlling grid scan line on inboard shading line and outside shading line, and be distributed in the both sides of data wire; One end of wherein said outside shading line or data wire has one first projection at least, described first projection must guarantee that data wire and outside shading line overlap, the other end of outside shading line overlaps with a end across the reparation line of controlling grid scan line, and what the other end of repairing line and data wire overlapped first repairs the liner overlapping; When data wire is short-circuited, at first carry out laser cutting in the both sides of its short circuit place, shine connection at above-mentioned four overlapping places with laser then, make data wire repair liner and connect, form the path that gets around the short circuit part by outside shading line, reparation line and first.
Based on above-mentioned design, thin-film transistor array base-plate of the present invention and restorative procedure thereof, because the intersection at data wire and controlling grid scan line has designed a shed repair complex structure, overcome in the prior art shortcoming that can only repairing pixel interval censored data line opens circuit, the open circuit conditions of data wire that not only can the repairing pixel interval, can repair the opening circuit of intersection of data wire and controlling grid scan line simultaneously, but also can repair the situation of data wire and controlling grid scan line short circuit, and do not influence aperture opening ratio, as long as carry out the purpose that the laser radiation welding can reach reparation at four overlapping places, repair convenient and simple.
In order further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing.Yet accompanying drawing is only for reference and aid illustration usefulness, is not construed as limiting the invention.
Description of drawings
Fig. 1 is a TFT board structure schematic diagram in the prior art;
Fig. 2 is the TFT board structure schematic diagram of the embodiment of the invention one;
Fig. 3 is the TFT board structure schematic diagram of the embodiment of the invention two;
Fig. 4 is the schematic diagram that adopts the embodiment of the invention one structure that data wire is opened circuit and repairs;
Fig. 5 A and 5B are respectively and repair the schematic cross-section of front and back along Fig. 4 I-I direction;
Fig. 6 A and 6B are respectively and repair the schematic cross-section of front and back along Fig. 4 II-II direction;
Fig. 7 A and 7B are respectively and repair the schematic cross-section of front and back along Fig. 4 III-III direction;
Fig. 8 is the schematic diagram that adopts the embodiment of the invention two structures that data wire and the short circuit of controlling grid scan line intersection are repaired;
Fig. 9 A and 9B are respectively and repair the schematic cross-section of front and back along Fig. 8 IV-IV direction;
Figure 10 A and 10B are respectively and repair the schematic cross-section of front and back along Fig. 8 V-V direction;
Figure 11 A and 11B are respectively and repair the schematic cross-section of front and back along Fig. 8 VI-VI direction.
The drawing reference numeral explanation:
2: controlling grid scan line 2a, 2a-2: shading line 5:TFT
6: data wire 6a: projection 9: pixel electrode
9a: contact hole 10: laser radiation part 11:TFT substrate
20: controlling grid scan line 21: inboard shading line 22: outside shading line
22a: the first projection 22b: second projection is repaired liner at 23: the first
33a: second repairs liner 33b: the 3rd repairs liner
24: 26: the second insulating protective layers of 25: the first insulating protective layers of glass substrate
30: data wire 31: thin-film transistor (TFT) 311: grid level
312: source electrode 313: drain electrode 314: amorphous silicon layer
32: repair line 40: pixel electrode 41: contact hole
Embodiment
The invention will be further described below in conjunction with accompanying drawing and exemplary embodiments.
Embodiment one
Fig. 2 is the TFT board structure schematic diagram of the embodiment of the invention one.
With reference to Fig. 2, Fig. 5 A, thin-film transistor array base-plate comprises many controlling grid scan lines 20 that extend along first direction; Many the data wires 30 that extend along second direction, controlling grid scan line 20 and data wire 30 intersect to form pixel region; Thin-film transistor 31 and pixel electrode 40 are set in the pixel region, thin-film transistor 31 is by grid 311, source electrode 312 and drain and 313 constitute, grid 311 is electrically connected with controlling grid scan line 20, drain electrode 313 is electrically connected with data wire 30, source electrode 312 is connected with pixel electrode 40 by contact hole 41, grid 311 is formed on the first metal layer, source electrode 312 and drain electrode are formed on second metal level, there is SiNx insulating barrier 25 to separate between two-layer, source electrode 312 and with overlapping grid 311 both sides that are deposited on of drain electrode 313 symmetries, amorphous Si layer 314 is between grid and source, drain electrode; ITO pixel electrode layer 40 is deposited on the superiors, and between the source, drain electrode layer by 26 insulation of SiNx protective layer.
The both sides of data wire 30 are distributed with inboard shading line 21 and outside shading line 22, shading line 21 and 22 be formed on controlling grid scan line 20 same metal levels (the first metal layer) on, be used to cover light from the peripheral incident of pixel electrode 40; The lower end of outside shading line 22 has one first projection 22a at least, the first projection 22a can be extended to form towards data wire 30 by outside shading line 22, and overlap with data wire 30, also can by data wire 30 toward the outer side shading line 22 extend to form, and overlap with outside shading line 22.The upper end of outside shading line 22 stretches out and is formed with the second projection 22b, the second projection 22b and extend and overlap across the reparation line 32 of controlling grid scan line 20 along second direction, repair the other end of line 32 and repair liner 23 overlappings along first direction and with first of data wire 30 overlappings, first repairs liner 23, inboard shading line 21, outside shading line 22 and controlling grid scan line 20 are formed on the same metal level (the first metal layer), repairing line 32 is formed on the same metal level (second metal level) with data wire 30, the distance of repairing line 32 and data wire 30 is more than or equal to 6 microns, to guarantee that on processing procedure repairing line 32 can not connect together each other with data wire 30.
Fig. 4 is the schematic diagram that adopts embodiment of the invention pair of data lines to open circuit and repair; Fig. 5 A and 5B are respectively and repair the schematic cross-section of front and back along Fig. 4 I-I direction; Fig. 6 A and 6B are respectively and repair the schematic cross-section of front and back along Fig. 4 II-II direction; Fig. 7 A and 7B are respectively and repair the schematic cross-section of front and back along Fig. 4 III-III direction.
With reference to Fig. 4, when data wire 30 opens circuit at pixel range A-B place or at the C-D place, boundary of data wire 30 and controlling grid scan line 20, described below four positions are carried out four laser welding and can be repaired: first laser welding position is the overlapping place of the first projection 22a and data wire 30, Fig. 5 A and 5B are respectively the schematic cross-sections before and after the laser welding of this position (being the I-I direction), and the downside of the data wire 30 that opens circuit after the welding is connected with outside shading line 22; Second welding position is second projection, 2 2b and the folded place of repairing line 32, Fig. 6 A and 6B are the schematic cross-sections before and after the laser welding of this position (being the II-II direction), after the welding, outside shading line 22 is connected with reparation line 32, the 3rd welding position is to repair the line 32 and the first overlapping place of repairing liner 23, the 4th welding position is at the data wire 30 and the first overlapping place of repairing liner 23, Fig. 7 A and 7B are the 3rd, schematic cross-section before and after the laser welding of four positions (being the III-III direction), after the welding, repair line 32 and be connected with the upside of the data wire 30 that opens circuit; By above four laser welding, the data wire 30 that opens circuit is just repaired liner 23 by outside shading line 22, reparation line 32 and first and is connected, and reaches the reparation purpose.
In like manner also can adopt the tft array substrate structure of following embodiment two that data wire is opened circuit and carry out laser repairing, as shown in Figure 3, when data wire 30 when the intersection of pixel range or data wire 30 and controlling grid scan line 20 opens circuit, all can adopt said method reparation, carry out laser welding four times four positions during reparation: first laser welding position is at the overlapping place of the first projection 22a and data wire 30, and the downside of the data wire 30 that opens circuit after the welding is connected with outside shading line 22; Second welding position is at outside shading line 22 and reparation line 32 overlapping places, and after the welding, outside shading line 22 is connected with reparation line 32; The 3rd welding position is to repair the line 32 and the first overlapping place of repairing liner 23, and the 4th welding position is at the data wire 30 and the first overlapping place of repairing liner 23, after third and fourth welding, repairs line 32 and is connected with the upside of the data wire 30 that opens circuit; By above four laser welding, the data wire 30 that opens circuit is just repaired liner 23 by outside shading line 22, reparation line 32 and first and is connected, and realizes repairing.
Embodiment two
Fig. 3 is the TFT board structure schematic diagram of the embodiment of the invention two.
With reference to Fig. 3, what the structure of the thin-film transistor array base-plate that provides with embodiment one was different is, the upper end of the outside shading line 22 in the present embodiment does not have the second projection 22b, repair line 32 and be formed on the pixel electrode layer, the overlapping intersection intermediate layer of repairing line 32 and the first reparation liner 23 and outside shading line 22 also is respectively arranged with data wire 30 and is formed on reparation liner 33a of second on the same metal level (second metal level) and the 3rd reparation liner 33b.
Fig. 8 is the schematic diagram that adopts two pairs of data wires of the embodiment of the invention and the short circuit of controlling grid scan line intersection to repair; Fig. 9 A and 9B are respectively and repair the schematic cross-section of front and back along Fig. 8 IV-IV direction; Figure 10 A and 10B are respectively and repair the schematic cross-section of front and back along Fig. 8 V-V direction; Figure 11 A and 11B are respectively and repair the schematic cross-section of front and back along Fig. 8 VI-VI direction.
With reference to Fig. 8, when the intersection of data wire 30 and controlling grid scan line 20 is short-circuited, carry out twice laser cutting earlier, carry out four laser welding then and can repair.The position of cutting twice is at the intersection of controlling grid scan line 20 and data wire 30 and in the both sides of controlling grid scan line 20, first welding position is at the data wire 30 and the first overlapping place of repairing liner 23, Fig. 9 A, 9B is by the schematic cross-section before and after two cutting positions and first welding position (the being the IV-IVI direction) laser welding, data wire 30 and controlling grid scan line 20 are connected by foreign matter before the cutting, can not show normally that thereby cause cutting back data wire 30 disconnects each other with controlling grid scan line 20; Second welding position is to repair the line 32 and the first overlapping place of repairing liner 23, the 3rd welding position is at outside shading line 22 and the overlapping place of repairing line 32, at the second and the 3rd weld, repair and also be provided with first of two intermediate layers between 22 layers on liner 23 or the outside shading line and repair liner 33a and the 3rd reparation liner 33b repairing line 32 and first, Figure 10 A, 10B is the schematic cross-section before and after second and the 3rd welding position (the being the V-V direction) laser welding, repair liner 33a and the 3rd by second of these two intermediate layers and repair liner 33b, repair between line 32 and the outside shading line 22 and realized good being connected; The 4th laser welding position is at the overlapping place of the first projection 22a and data wire 30, and Figure 11 A, 11B are the schematic cross-sections before and after the laser welding of the 4th welding position (being the VI-VI direction); By cutting twice and four laser welding, the short circuit between data wire 30 and the controlling grid scan line 20 is cut comes, and data wire 30 is repaired liner 23, reparation line 32 and outside shading line 22 by rich row first and realized reparation.
In like manner, also can adopt the foregoing description one described array base-plate structure, the controlling grid scan line 20 and the intersection short circuit of data wire 30 are repaired, as shown in Figure 2, carry out twice laser cutting during reparation earlier, carry out laser welding then four times.The two positions of cutting is at the intersection of controlling grid scan line 20 and data wire 30 and in the both sides of controlling grid scan line 20 equally, and first welding position is at the data wire 30 and the first overlapping place of repairing liner 23; Second welding position is to repair liner 23 and the overlapping place of repairing line 32 first, the 3rd welding position be the second projection 22b with repair line 32 overlapping places, the 4th welding position is the overlapping place at the first projection 22a and data wire 30; By twice laser cutting and four laser welding, data wire 30 is cut with controlling grid scan line 20 short circuits and comes, and data wire 30 is repaired liner 23, reparation line 32 and outside shading line 22 by rich row first and realized repairing.
In sum, because tft array substrate structure of the present invention has designed a shed repair complex structure at the intersection of data wire 30 and controlling grid scan line 20, can overcome the shortcoming in the conventional art, but both open circuit conditions of the data wire 30 in repairing pixel interval, but the also intersection data wire of repair data line 30 and controlling grid scan line 20 situation about opening circuit, can also repair the situation of data wire 30 and controlling grid scan line 20 intersection short circuits, and repair convenient and simplely, be a kind of simple and practical TFT board structure and restorative procedure.
Claims (7)
1. a thin-film transistor array base-plate comprises
Many the controlling grid scan lines (20) that extend along first direction;
Many the data wires (30) that extend along second direction, controlling grid scan line (20) and data wire (30) intersect to form pixel region;
Be arranged on thin-film transistor (31) and pixel electrode (40) in the pixel region;
Be formed on the same metal level of controlling grid scan line (20) on inboard shading line (21) and outside shading line (22), and be distributed in the both sides of data wire (30);
One end of wherein said outside shading line (22) or data wire (30) has one first projection (22a) at least, described first projection (22a) overlaps outside shading line (22) and data wire (30), the other end of outside shading line (22) overlaps with a end across the reparation line (32) of controlling grid scan line (20), and what the other end of repairing line (32) and data wire (30) overlapped first repairs liner (23) overlapping.
2. array base palte according to claim 1 is characterized in that described first projection (22a) is extended to form towards data wire (30) by outside shading line (22), or by data wire (30) toward the outer side shading line (22) extend to form.
3. array base palte according to claim 1, the upper end that it is characterized in that described outside shading line (22) outwards is formed with second projection (22b), described reparation line (32) and the overlapping intersection of second projection (22b), and described first repairs liner (23) is formed on the same metal level with controlling grid scan line (20), and described reparation line (32) is formed on the same metal level with data wire (30).
4. array base palte according to claim 3 is characterized in that distance between described reparation line (32) and the data wire (30) is more than or equal to 6 microns.
5. array base palte according to claim 1, it is characterized in that the described first reparation liner (23) is formed on the same metal level with controlling grid scan line (20), described reparation line (32) is formed on the pixel electrode layer, and the described reparation line (32) and the first overlapping intersection intermediate layer of repairing liner (23) and outside shading line (22) also are respectively arranged with data wire (30) and are formed on reparation liner (33a) of second on the same metal level and the 3rd reparation liner (33b).
6. a method of repairing thin-film transistor array base-plate comprises
Many the controlling grid scan lines (20) that are formed on the first metal layer and extend along first direction;
Many the data wires (30) that are formed on second metal level and extend along second direction, controlling grid scan line (20) and data wire (30) intersect to form pixel region;
Be arranged on thin-film transistor (31) and pixel electrode (40) in the pixel region;
Be formed on the same metal level of controlling grid scan line (20) on inboard shading line (21) and outside shading line (22), and be distributed in the both sides of data wire (30);
One end of wherein said outside shading line (22) or data wire (30) has one first projection (22a) at least, described first projection (22a) overlaps outside shading line (22) and data wire (30), the other end of outside shading line (22) overlaps with a end across the reparation line (32) of controlling grid scan line (20), and what the other end of repairing line (32) and data wire (30) overlapped first repairs liner (23) overlapping;
When data wire (30) when opening circuit, shine connection at above-mentioned four overlapping places with laser, make data wire (30) by outside shading line (22), repair line (32) and first and repair liner (23) and connect, form the path that gets around the part that opens circuit.
7. a method of repairing thin-film transistor array base-plate comprises
Many the controlling grid scan lines (20) that are formed on the first metal layer and extend along first direction;
Many the data wires (30) that are formed on second metal level and extend along second direction, controlling grid scan line (20) and data wire (30) intersect to form pixel region;
Be arranged on thin-film transistor (31) and pixel electrode (40) in the pixel region;
Be formed on the same metal level of controlling grid scan line (20) on inboard shading line (21) and outside shading line (22), and be distributed in the both sides of data wire (30);
One end of wherein said outside shading line (22) or data wire (30) has one first projection (22a) at least, described first projection (22a) overlaps outside shading line (22) and data wire (30), the other end of outside shading line (22) overlaps with a end across the reparation line (32) of controlling grid scan line (20), and what the other end of repairing line (32) and data wire (30) overlapped first repairs liner (23) overlapping;
When data wire (30) when being short-circuited, at first carry out laser cutting in the both sides of its short circuit place, shine connection at above-mentioned four overlapping places with laser then, make data wire (30) repair liner (23) and connect, form the path that gets around the short circuit part by outside shading line (22), reparation line (32) and first.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100402067A CN100428481C (en) | 2007-04-28 | 2007-04-28 | Thin film transistor array base board and its repairing method |
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| CNB2007100402067A CN100428481C (en) | 2007-04-28 | 2007-04-28 | Thin film transistor array base board and its repairing method |
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| CN100428481C true CN100428481C (en) | 2008-10-22 |
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| JP2004226549A (en) * | 2003-01-21 | 2004-08-12 | Hitachi Displays Ltd | Liquid crystal display device |
| US20040169781A1 (en) * | 2003-02-18 | 2004-09-02 | Au Optronics Corp. | Repair method for defects in data lines and flat panel display incorporating the same |
| CN1643443A (en) * | 2002-03-26 | 2005-07-20 | 怗福丕帝股份有限公司 | Array substrate and its manufacturing method |
| US20050285989A1 (en) * | 2004-06-28 | 2005-12-29 | Nec Lcd Technologies, Ltd. | Liquid crystal display substrate and method of repairing the same |
| US20060038175A1 (en) * | 2003-08-29 | 2006-02-23 | Han-Chung Lai | Pixel structure |
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2007
- 2007-04-28 CN CNB2007100402067A patent/CN100428481C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1643443A (en) * | 2002-03-26 | 2005-07-20 | 怗福丕帝股份有限公司 | Array substrate and its manufacturing method |
| JP2004226549A (en) * | 2003-01-21 | 2004-08-12 | Hitachi Displays Ltd | Liquid crystal display device |
| US20040169781A1 (en) * | 2003-02-18 | 2004-09-02 | Au Optronics Corp. | Repair method for defects in data lines and flat panel display incorporating the same |
| US20060038175A1 (en) * | 2003-08-29 | 2006-02-23 | Han-Chung Lai | Pixel structure |
| US20050285989A1 (en) * | 2004-06-28 | 2005-12-29 | Nec Lcd Technologies, Ltd. | Liquid crystal display substrate and method of repairing the same |
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