CN100424860C - Heat dissipation type flip chip package structure - Google Patents
Heat dissipation type flip chip package structure Download PDFInfo
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- CN100424860C CN100424860C CNB2005100931752A CN200510093175A CN100424860C CN 100424860 C CN100424860 C CN 100424860C CN B2005100931752 A CNB2005100931752 A CN B2005100931752A CN 200510093175 A CN200510093175 A CN 200510093175A CN 100424860 C CN100424860 C CN 100424860C
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 136
- 239000002826 coolant Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000004806 packaging method and process Methods 0.000 claims abstract description 16
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims 1
- 238000013461 design Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000011231 conductive filler Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
技术领域 technical field
本发明涉及一种散热型覆晶封装结构,特别是涉及一种具有散热器(heat sink)的散热型覆晶封装结构。The invention relates to a heat dissipation flip-chip package structure, in particular to a heat dissipation flip chip package structure with a heat sink.
背景技术 Background technique
由于现今的电子产品讲求高功能性与极高效能等趋势,因此该些电子产品的晶片长时间处于高度运算的状态,而会导致晶片产生出大量的热能,此时若无法即时将该些热能散发出去,则容易导致该晶片发生翘曲(warpage)或龟裂(crack)的情况,而导致该些电子产品失效或报废,进而降低产品的寿期,所以现今的高度运算晶片是加装散热装置于该晶片的一非主动面,以加快热能的散发速度。Since today's electronic products emphasize high functionality and extremely high performance, the chips of these electronic products are in a high-computing state for a long time, which will cause a large amount of heat energy to be generated by the chip. If it is emitted, it will easily cause the chip to warp or crack, which will cause these electronic products to fail or be scrapped, thereby reducing the lifespan of the product. Therefore, today's highly computing chips are equipped with heat dissipation Installed on a non-active surface of the chip to speed up the dissipation of heat energy.
请参阅图1所示,是现有习知的散热型封装结构,其包括一基板10、复数个焊球20、一覆晶晶片30、复数个凸块40以及一散热片50。该些焊球20设置于该基板10的下表面11,覆晶晶片30设置于基板10的上表面12,该些凸块40形成于覆晶晶片30的一主动面31,以电性连接基板10与覆晶晶片30,散热片50是藉由一加强件60设置于基板10的上表面12,并与覆晶晶片30的一背面32热耦合,其中,覆晶晶片30所产生的热能传导至该散热片50,再藉由散热片50散发热能,故散热片50的尺寸大小是为整个元件最重要的关键,而上述的覆晶晶片30是仅藉由散热片50散发热能,当将散热片50设置于一温度较高的热源时,因散热片50的散热面积不足,而造成热源的热能无法及时散发出去,进而造成产品温度过高而影响效能。Please refer to FIG. 1 , which is a conventional heat dissipation package structure, which includes a
由此可见,上述现有的散热型覆晶封装结构在结构与使用上,显然仍存在有不便与缺陷,而亟待加以进一步改进。为了解决散热型覆晶封装结构存在的问题,相关厂商莫不费尽心思来谋求解决之道,但长久以来一直未见适用的设计被发展完成,而一般产品又没有适切的结构能够解决上述问题,此显然是相关业者急欲解决的问题。因此如何能创设一种新型的散热型覆晶封装结构,便成了当前业界极需改进的目标。It can be seen that the above-mentioned existing heat dissipation flip-chip packaging structure obviously still has inconveniences and defects in structure and use, and needs to be further improved. In order to solve the problems existing in the heat-dissipating flip-chip packaging structure, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure for general products to solve the above problems. , this is obviously a problem that relevant industry players are eager to solve. Therefore, how to create a new type of heat-dissipating flip-chip packaging structure has become a goal that needs to be improved in the current industry.
有鉴于上述现有的散热型覆晶封装结构存在的缺陷,本发明人基于从事此类产品设计制造多年丰富的实务经验及专业知识,并配合学理的运用,积极加以研究创新,以期创设一种新型的散热型覆晶封装结构,能够改进一般现有的散热型覆晶封装结构,使其更具有实用性。经过不断的研究、设计,并经反复试作样品及改进后,终于创设出确具实用价值的本发明。In view of the defects in the above-mentioned existing heat-dissipating flip-chip packaging structure, the inventor actively researches and innovates based on years of rich practical experience and professional knowledge engaged in the design and manufacture of such products, and cooperates with the application of academic theories, in order to create a The novel heat-dissipating flip-chip packaging structure can improve the general existing heat-dissipating flip-chip packaging structure, making it more practical. Through continuous research, design, and after repeated trial samples and improvements, the present invention with practical value is finally created.
发明内容 Contents of the invention
本发明的目的在于,克服现有的散热型覆晶封装结构存在的缺陷,而提供一种新型的散热型覆晶封装结构,所要解决的技术问题是使其包括一基板、一覆晶晶片及一散热器,该覆晶晶片接合至该基板的一上表面,该散热器设置于该覆晶晶片的一背面,该散热器包括一散热壳体以及一冷却剂,该散热壳体包括一底热交换部、一顶热交换部以及一冷却剂集收部,该冷却剂集收部连接该底热交换部与该顶热交换部,以形成一密闭空间,其中,该冷却剂集收部用以收集该冷却剂,以利在该密闭空间内进行一散热循环时,该冷却剂是可流布至该些散热凸柱并蒸发,以利覆晶晶片热能的散发,从而更加适于实用。The purpose of the present invention is to overcome the defects of the existing heat dissipation type flip chip packaging structure, and provide a novel heat dissipation type flip chip packaging structure. The technical problem to be solved is to make it include a substrate, a flip chip and A heat sink, the flip chip is bonded to an upper surface of the substrate, the heat sink is arranged on a back side of the flip chip, the heat sink includes a heat dissipation case and a coolant, the heat dissipation case includes a bottom heat exchange part, a top heat exchange part and a coolant collection part, the coolant collection part connects the bottom heat exchange part and the top heat exchange part to form a closed space, wherein the coolant collection part It is used to collect the coolant to facilitate a heat dissipation cycle in the enclosed space. The coolant can flow to the heat dissipation protrusions and evaporate to facilitate the dissipation of heat energy of the flip chip, which is more suitable for practical use.
本发明的另一目的在于,提供一种散热型覆晶封装结构,所要解决的技术问题是使其一底热交换部包括复数个散热凸柱,增加该底热交换部的散热面积,当一覆晶晶片产生热能时,可藉由该些散热凸柱加快热能的散发速度,以维持该覆晶晶片的运作,延长产品寿期,从而更加适于实用。Another object of the present invention is to provide a heat-dissipating flip-chip package structure. The technical problem to be solved is to make a heat exchanging part of the bottom include a plurality of heat-dissipating protrusions, so as to increase the heat dissipation area of the heat exchanging part of the bottom. When the flip-chip chip generates heat energy, the dissipating speed of the heat energy can be accelerated by the heat dissipation protrusions to maintain the operation of the flip-chip chip and prolong the life of the product, so that it is more suitable for practical use.
本发明的目的及解决其技术问题是采用以下技术方案来实现的。依据本发明提出的一种散热型覆晶封装结构,其包括:一基板,具有一上表面;一覆晶晶片,接合至该基板的该上表面,该覆晶晶片具有一背面;及一散热器,设置于覆晶晶片的背面,该散热器包括一散热壳体以及一冷却剂,该散热壳体是为一密闭空间,该散热壳体具有:一底热交换部,贴设于该覆晶晶片的该背面并包括复数个在该密闭空间内的散热凸柱;一顶热交换部;及一冷却剂集收部,连接该底热交换部与该顶热交换部,用以收集该冷却剂;其中,当在散热壳体内进行一散热循环时,该冷却剂是可流布至该些散热凸柱并蒸发。The purpose of the present invention and the solution to its technical problems are achieved by adopting the following technical solutions. A heat-dissipating flip-chip packaging structure proposed according to the present invention includes: a substrate having an upper surface; a flip-chip chip bonded to the upper surface of the substrate, the flip-chip chip having a back surface; and a heat-dissipating chip The heat sink is arranged on the back of the flip chip. The heat sink includes a heat dissipation shell and a coolant. The heat dissipation shell is a closed space. The heat dissipation shell has: a bottom heat exchange part attached to the cover The back side of the crystal wafer and includes a plurality of heat dissipation protrusions in the confined space; a top heat exchange part; and a coolant collecting part, connecting the bottom heat exchange part and the top heat exchange part, for collecting the Coolant; wherein, when a heat dissipation cycle is performed in the heat dissipation housing, the coolant can flow to the heat dissipation protrusions and evaporate.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.
前述的散热型覆晶封装结构,其中该些散热凸柱是一体成型于该散热壳体。In the aforementioned heat dissipation type flip-chip package structure, wherein the heat dissipation protrusions are integrally formed on the heat dissipation housing.
前述的散热型覆晶封装结构,其中该些散热凸柱是以粘接或焊接方式结合至该底热交换部。In the aforementioned heat dissipation type flip-chip package structure, the heat dissipation protrusions are bonded to the bottom heat exchanging portion by bonding or soldering.
前述的散热型覆晶封装结构,其中该些散热凸柱是为圆锥状或圆弧状的中空结构并包括一导热填充物,填充于该些散热凸柱的中空区。In the aforementioned heat dissipation type flip-chip package structure, wherein the heat dissipation protrusions are conical or arc-shaped hollow structures and include a heat conduction filler filled in the hollow area of the heat dissipation protrusions.
前述的散热型覆晶封装结构,其中所述的散热壳体是具有一在该密闭空间内的倾斜面,连接该底热交换部与该冷却剂集收部,以利冷却剂毛细流入该底热交换部。In the aforementioned heat dissipation type flip-chip package structure, wherein the heat dissipation housing has an inclined surface in the enclosed space, connecting the bottom heat exchange part and the coolant collection part, so as to facilitate the capillary flow of the coolant into the bottom heat exchange section.
前述的散热型覆晶封装结构,其中所述的散热壳体的预热交换部是为鳍状结构。In the aforementioned heat dissipation type flip-chip package structure, wherein the preheat exchange portion of the heat dissipation housing is a fin-shaped structure.
前述的散热型覆晶封装结构,其另包括一加强件,设置于该基板的上表面,以支撑该散热器与基板。The aforementioned heat dissipation flip-chip package structure further includes a reinforcing member disposed on the upper surface of the substrate to support the heat sink and the substrate.
前述的散热型覆晶封装结构,其另包括一散热鳍板,设置于该顶热交换部上。The aforementioned heat-dissipating flip-chip package structure further includes a heat-dissipating fin plate disposed on the top heat exchanging portion.
前述的散热型覆晶封装结构,其另包括一散热胶,热耦合连接该覆晶晶片的背面与该散热壳体的底热交换部。The aforementioned heat dissipation flip-chip package structure further includes a heat dissipation adhesive thermally coupled to connect the back surface of the flip chip with the bottom heat exchange portion of the heat dissipation housing.
前述的散热型覆晶封装结构,其另包括复数个焊球,设置于该基板的一下表面。The aforementioned heat dissipation flip-chip package structure further includes a plurality of solder balls disposed on the lower surface of the substrate.
本发明与现有技术相比具有明显的优点和有益效果。由以上技术方案可知,本发明散热型覆晶封装结构至少具有下列优点:Compared with the prior art, the present invention has obvious advantages and beneficial effects. From the above technical solutions, it can be known that the heat dissipation flip-chip packaging structure of the present invention has at least the following advantages:
依本发明的散热型覆晶封装结构,包括一基板、一覆晶晶片及一散热器,该基板具有一上表面,该覆晶晶片接合至该基板的该上表面,且该散热器设置于该覆晶晶片,该散热器包括一散热壳体以及一冷却剂,其中该散热壳体具有一底热交换部、顶热交换部以及一冷却剂集收部,该底热交换部贴设于该覆晶晶片的一背面并包括复数个散热凸柱,该顶热交换部可以传导覆晶晶片所产生的热能,该冷却剂集收部连接该底热交换部与该顶热交换部,可以收集该冷却剂,利于在该密闭空间内进行一散热循环,其中,当覆晶晶片所产生的热能是传递至该底热交换部,该冷却剂在吸收传导至该底热交换部的热能后即转变为汽态冷却剂,然后向上攀升至该顶热交换部,并将热能传递至该顶热交换部并重新凝结成液态冷却剂,再回流至该冷却剂集收部,因为该底热交换部包括该些散热凸柱,因此该覆晶晶片所产生的热能因散热面积的增加而快速地向该顶热交换部排散,维持该覆晶晶片的运作效率。According to the heat dissipation flip chip package structure of the present invention, it includes a substrate, a flip chip and a heat sink, the substrate has an upper surface, the flip chip is bonded to the upper surface of the substrate, and the heat sink is arranged on The flip chip, the heat sink includes a heat dissipation shell and a coolant, wherein the heat dissipation shell has a bottom heat exchange part, a top heat exchange part and a coolant collection part, the bottom heat exchange part is attached to A back side of the flip chip includes a plurality of heat dissipation protrusions, the top heat exchanging part can conduct heat energy generated by the flip chip, and the coolant collection part connects the bottom heat exchanging part and the top heat exchanging part, which can Collecting the coolant facilitates a heat dissipation cycle in the enclosed space, wherein, when the heat energy generated by the flip chip is transferred to the bottom heat exchange part, the coolant absorbs the heat energy transferred to the bottom heat exchange part That is, it turns into a vapor coolant, then climbs up to the top heat exchange part, and transfers heat energy to the top heat exchange part and recondenses into liquid coolant, and then flows back to the coolant collection part, because the bottom heat The exchanging part includes the heat dissipation protrusions, so the heat energy generated by the flip chip is quickly dissipated to the top heat exchanging part due to the increase of the heat dissipation area, so as to maintain the operating efficiency of the flip chip.
综上所述,本发明特殊的散热型覆晶封装结构,其具有上述诸多的优点及实用价值,并在同类产品中未见有类似的结构设计公开发表或使用而确属创新,其不论在产品结构或功能上皆有较大的改进,在技术上有较大的进步,并产生了好用及实用的效果,且较现有的散热型覆晶封装结构具有增进的多项功效,从而更加适于实用,诚为一新颖、进步、实用的新设计。To sum up, the special heat-dissipating flip-chip packaging structure of the present invention has the above-mentioned many advantages and practical value, and no similar structural design has been published or used in similar products, so it is indeed an innovation. The product structure or function has been greatly improved, and the technology has made great progress, and has produced easy-to-use and practical effects, and has improved multiple functions compared with the existing heat-dissipating flip-chip packaging structure, so that It is more suitable for practicality, and it is a novel, progressive and practical new design.
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings.
附图说明 Description of drawings
图1所示为现有习知散热型封装结构的截面示意图。FIG. 1 is a schematic cross-sectional view of a conventional heat-dissipating package structure.
图2所示为依据本发明的第一具体实施例的散热型覆晶封装结构的截面示意图。FIG. 2 is a schematic cross-sectional view of a heat dissipation flip-chip package structure according to a first embodiment of the present invention.
图3所示为依据本发明的第二具体实施例的散热型覆晶封装结构的截面示意图。FIG. 3 is a schematic cross-sectional view of a heat dissipation flip-chip package structure according to a second embodiment of the present invention.
10:基板 11:下表面10: Substrate 11: Lower surface
12:上表面 20:焊球12: Upper surface 20: Solder ball
30:覆晶晶片 31:主动面30: Flip chip 31: Active surface
32:背面 40:凸块32: Back 40: Bump
50:散热片 60:加强件50: heat sink 60: reinforcement
100:散热型覆晶封装结构 110:基板100: heat dissipation flip-chip package structure 110: substrate
111:上表面 112:下表面111: upper surface 112: lower surface
120:覆晶晶片 121:背面120: flip chip 121: back
122:凸块 130:散热器122: Bump 130: Radiator
131:散热壳体 132:冷却剂131: Cooling shell 132: Coolant
133:底热交换部 133a:散热凸柱133: Bottom
134:顶热交换部 135:冷却剂集收部134: Top heat exchange unit 135: Coolant collection unit
136:倾斜面 137:导热填充物136: Inclined surface 137: Thermally conductive filler
140:焊球 150:散热胶140: Solder balls 150: Thermal paste
200:散热型覆晶封装结构 210:基板200: heat dissipation flip-chip package structure 210: substrate
211:上表面 220:覆晶晶片211: Upper surface 220: Flip chip
221:背面 222:凸块221: Back 222: Bump
230:散热器 231:散热壳体230: radiator 231: cooling shell
232:冷却剂 233:底热交换部232: Coolant 233: Bottom heat exchange unit
233a:散热凸柱 234:顶热交换部233a: Radiation boss 234: Top heat exchange part
235:冷却剂集收部 236:导热填充物235: Coolant Collection Department 236: Thermal Conductive Filler
240:加强件 250:散热鳍板240: reinforcement 250: cooling fins
具体实施方式 Detailed ways
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的散热型覆晶封装结构其具体实施方式、结构、特征及其功效,详细说明如后。In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, features and details of the heat dissipation flip-chip packaging structure proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. Its effect is described in detail below.
请参阅图2所示,是本发明散热型覆晶封装结构的第一具体实施例,该散热型覆晶封装结构100,包括一基板110、一覆晶晶片120以及一散热器130。该基板110具有一上表面111。在本实施例中,该散热型覆晶封装结构100包括复数个焊球140,其设置于基板110的一下表面112。覆晶晶片120接合至基板110的上表面111,覆晶晶片120具有一背面121。在本实施例中,覆晶晶片120藉由复数个凸块122与基板110电性连接。Please refer to FIG. 2 , which is a first embodiment of the heat dissipation flip chip package structure of the present invention. The heat dissipation flip
散热器130设置于该覆晶晶片120的背面121,其中散热器130包括一散热壳体131及一冷却剂132,该散热壳体131是为一密闭空间,并包括一底热交换部133、一顶热交换部134以及一冷却剂集收部135,该底热交换部133贴设于覆晶晶片120的背面121,并包括复数个在该密闭空间内的散热凸柱133a,以增加散热面积。在本实施例中,该些散热凸柱133a是为圆锥状,此外,该散热壳体131的顶热交换部134形成有散热鳍片,以利热能的散发,较佳地,该散热型覆晶封装结构100另包括一散热胶150,热耦合连接覆晶晶片120的背面121与底热交换部133。顶热交换部134是为该散热壳体131的顶部,用以散发热能,冷却剂集收部135连接底热交换部133以及顶热交换部134,用以收集冷却剂132,以在密闭空间内进行一散热循环时,冷却剂132可流布至该些散热凸柱133a并蒸发,较佳地,散热壳体131是具有一在该密闭空间内的倾斜面136,其连接底热交换部133与冷却剂集收部135,以使冷却剂132可经由该倾斜面136毛细流入该底热交换部133,以利进行一散热循环。在本实施例中,该些散热凸柱133a另以粘接或焊接方式结合至底热交换部133,较佳地,该些散热凸柱133a是为中空结构,此外,该些散热凸柱133a另包括一导热填充物137,例如焊料、导热界面物质(Thermal Interface Material,TIM)等等,其是填充于该些散热凸柱133a的中空区。The
在散热型覆晶封装结构100中,覆晶晶片120所产生的热能传递至底热交换部133,并由流入底热交换部122的液态冷却剂132所吸收,液态冷却剂132在吸收热能后转变为汽态冷却剂132,此时,汽态冷却剂132向上攀升至顶热交换部134,当汽态冷却剂132抵达顶热交换部134时,会将热能传递至顶热交换部134并在顶热交换部134重新凝结成液态冷却剂132,再回流至冷却剂集收部135,又因底热交换部133包括该些散热凸柱133a,故覆晶晶片120所产生的热能因散热面积的增加而快速地向顶热交换部134排散,以维持覆晶晶片120的正常工作温度,避免因温度过高而降低覆晶晶片120的运作效率。In the heat dissipation type flip
请参阅图3所示,是本发明散热型覆晶封装结构的第二具体实施例,该散热型覆晶封装结构200包括一基板210、一覆晶晶片220及一散热器230,基板210具有一上表面211,覆晶晶片220接合至基板210的上表面211并具有一背面221。在本实施例中,覆晶晶片220包括复数个凸块222,以接合覆晶晶片220与基板210。散热器230设置于覆晶晶片220的背面221并包括一散热壳体231以及一冷却剂232,散热壳体231是为一密闭空间,其中,散热壳体231包括一底热交换部233、一顶热交换部234及一冷却剂集收部235,底热交换部233贴设于该覆晶晶片220的背面并包括复数个在该密闭空间内的散热凸柱233a,以增加散热面积。在本实施例中,散热壳体231与该些散热凸柱233a是为一体成型并呈圆弧状,较佳地,该些散热凸柱233a是为中空结构,此外,散热型覆晶封装结构200另包括一导热填充物236,其填充于该些散热凸柱233a的中空区。Please refer to FIG. 3 , which is a second specific embodiment of the heat dissipation flip chip package structure of the present invention. The heat dissipation flip
顶热交换部234用以散发热能,冷却剂集收部235连接该底热交换部233与该顶热交换部234,用以收集该冷却剂232,以在该密闭空间内进行一散热循环。在本实施例中,该散热型覆晶封装结构200包括一加强件240,其设置于基板210的上表面211,以支撑散热器230与基板210,此外,散热型覆晶封装结构200另包括一散热鳍片250,设置于顶热交换部234的外部,以加强散热速度。The top
在散热型覆晶封装结构200中,由于冷却剂232一直在散热壳体231的底热交换部233与预热交换部234之间进行热交换循环,并利用该些散热凸柱233a所增加的散热面积加快覆晶晶片220的散热速度,且散热鳍片250是加强了顶热交换部234与外界接触面的热交换速率,可使覆晶晶片220维持在正常的工作温度,避免因为温度过高,而降低了覆晶晶片200的工作效率。In the heat-dissipating flip-
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, can use the technical content disclosed above to make some changes or modify equivalent embodiments with equivalent changes, but all the content that does not depart from the technical solution of the present invention, according to the present invention Any simple modifications, equivalent changes and modifications made to the above embodiments by the technical essence still belong to the scope of the technical solution of the present invention.
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