CN100423065C - Drive circuit, display device using the drive circuit and electronic apparatus using the display device - Google Patents
Drive circuit, display device using the drive circuit and electronic apparatus using the display device Download PDFInfo
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- CN100423065C CN100423065C CNB021435928A CN02143592A CN100423065C CN 100423065 C CN100423065 C CN 100423065C CN B021435928 A CNB021435928 A CN B021435928A CN 02143592 A CN02143592 A CN 02143592A CN 100423065 C CN100423065 C CN 100423065C
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- output circuit
- current output
- control current
- line
- switchgear
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0297—Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
The currents that m pieces of quasi control current output circuits formed with a polycrystalline TFT output have the dispersion. In the present invention, the averaged value of the output currents of these m pieces of the quasi control current output circuits is outputted from the output terminals of n (n represents a natural number of m or less) of the control current output circuit. For example, the output currents of these m pieces of the quasi control current output circuits are in turn exchanged and outputted from the n (n represents a natural number of m or less) pieces of the output terminals of the control current output circuits. Thus, the drive circuit, which has suppressed the dispersion of the output current, can be provided.
Description
Technical field
The present invention relates to the driving circuit that on a kind of insulating surfaces, forms.Also relate to the display device with this driving circuit and a kind of light-emitting component that are located on the insulating surfaces.The present invention be more particularly directed to a kind of Active Matrix Display, it has this driving circuit, is arranged to many pixels of matrix, a kind of on-off element, and be arranged in a kind of light-emitting component on each pixel.
Background technology
A kind of Actire matrix display device has many pixels, is furnished with an on-off element and a light-emitting component in each pixel, and its advantage is that response speed is fast, with low voltage operating and have broad visual angle.
Light-emitting component is a kind of element of being controlled its brightness by curtage.It is typical electronic source element that this light-emitting component can adopt with OLED (Organic Light Emitting Diode) element, FE (electroluminescence demonstration) element, and MIM (metal-insulator-metal type) element or the like.
This light-emitting component comprises an anode, a negative electrode, and contain organic compound and be sandwiched in anode and negative electrode between a layer (hereinafter to be referred as it for organic compound layer).Light-emitting component is luminous according to the voltage that is applied between anode and the negative electrode.Below with the luminous driven light-emitting element that is called of light-emitting component.
Organic compound layer has stacked structure usually.The people such as Tang of Eastman Kodak Company have proposed a kind of typical stepped construction, and it is by a hole moving layer, a luminescent layer and an electron transfer layer composition.Other example of stepped construction comprises a stacked hole injection layer on anode successively, a hole moving layer, that of a luminescent layer and an electron transfer layer is a kind of, an and stacked hole injection layer on anode successively, a hole moving layer, a luminescent layer, that of an electron transfer layer and an electron injecting layer is a kind of.A kind of fluorescent dye can mix in the luminescent layer.The organic compound layer of going up as above constituting from pair of electrodes (anode and negative electrode) applies a given voltage, the charge carrier reorganization of guiding in its luminescent layer.The result just can make luminescent layer luminous.
At this moment, the luminosity of light-emitting component is directly proportional with electric current between the electrode of flowing through (anode and negative electrode).It is corresponding therewith that also to propose the flow through pixel structure of light-emitting component of each pixel of electric current be to be controlled by the electric current that is input to pixel parts (hereinafter referred to as Control current).This pixel structure is called as the current-control type pixel.
Fig. 7 is illustrated in an example of the current-control type pixel structure in the Actire matrix display device.
As shown in Figure 7, the current-control type pixel comprises a signal line 701,, 703, one lines 710 of 702, one power leads of sweep trace, a light-emitting component 709,704, one electric current storage transistor 705 of a switching transistor, the current transistor 706 of composition current mirror circuit, form current mirror circuit and be used for the driving transistors 707 of driven light-emitting element and a storage capacitors 708.
One of the source electrode of switching transistor 704 and drain electrode are connected to signal wire 701, and another utmost point is connected to the drain electrode of current transistor 706 and the source electrode and one of drain electrode of electric current storage transistor 705, and the grid of switching transistor 704 is connected to sweep trace 702.
The source electrode of current transistor 706 is connected to power lead 703.Drain electrode one side that the source electrode of electric current storage transistor 705 or electric current storage transistor 705 and switching transistor 704 disconnect is connected to an electrode of storage capacitors 708, the grid of the grid of current transistor 706 and driving transistors 707.
Below to explain to pixel shown in Figure 7 and import a vision signal and make the luminous driving method of light-emitting component (method of operating).When vision signal was imported into pixel, the current amplitude correspondence that the electric current of input (marking current) is had the brightness that this pixel shows.In pixel shown in Figure 7, being used for controlling the flow through Control current of electric current of the light-emitting component in each pixel is identical with vision signal (marking current).
A signal is transfused to sweep trace 702, makes switching transistor 704 enter the ON state, and then, the marking current of importing from signal wire 701 is transfused to pixel.Simultaneously, the signal that is input to line 710 makes electric current storage transistor 705 be in conducting state.
When reaching enough time after marking current is transfused to pixel, marking current turns between the source electrode of current transistor 706 and drain electrode and flows.Simultaneously, in storage capacitors 708, keep to make current transistor 706 to produce the grid voltage (voltage between grid and the source electrode) of a marking current by drain current.Change the signal of line 710 then, make electric current storage transistor 705 become nonconducting state.
Under current transistor 706 situation consistent with the characteristic of driving transistors 707, the drain current of current transistor 706 equals the drain current of driving transistors 707.Have an electric current to be input to light-emitting component 709 this moment, and it equals from the marking current of power lead 703 through driving transistors 707 inputs.So just can make light-emitting component 709 luminous according to the brightness of respective signal electric current.
Even no longer after the pixel current input signal, the voltage that keeps in memory capacitance 708 also can make the electric current of the driving transistors 707 of flowing through equal marking current.
The block representation of Fig. 8 has the structure of a kind of Actire matrix display device of Current Control pixel shown in Figure 7.
Fig. 8 represents a pixel parts 804, the scan drive circuit 803a of the sweep trace input signal of each pixel in pixel parts 804,803b, and in pixel parts 804 signal-line driving circuit 802 of the signal wire input signal of each pixel.Pixel parts 804 and scan drive circuit 803a, 803b are installed on the substrate with an insulating surfaces (below be called the pixel substrate) 801.With TAB805 signal-line driving circuit outside the LSI chip 806 802 or the like and LSI chip 806 are connected on the pixel substrate 801.
In Current Control pixel shown in Figure 7, the driving circuit of input Control current is expressed as the Control current output circuit.In the structure of display device shown in Figure 8, Control current output circuit correspondence signal-line driving circuit.
In addition, provide the line of Control current output to be expressed as the Control current line from the Control current output circuit to pixel parts.In pixel parts shown in Figure 7, Control current line correspondence signal wire 701.
As shown in Figure 8, the driving circuit (Control current output circuit) to current-control type pixel parts input Control current forms with the LSI chip on a monocrystalline substrate.The monocrystalline substrate that will be provided with the Control current output driving circuit with TAB or the like therein is connected on the pixel substrate.So just pixel parts can be connected to the Control current output circuit with circuit.
Yet, the overlapping width of the certain area of needs when connecting the Control current output circuit.In addition, Control current output circuit and can become very big with connection resistances and wire capacitances between its pixel parts that is connected with circuit mutually can't obtain the display device of low-power consumption.
Therefore just need on the pixel substrate, to form the Control current output circuit with polysilicon transistors.Also may obtain very high driving frequency in addition with the Control current output circuit that polysilicon transistors forms.
On the other hand, a problem existing of the Control current output circuit that forms with polysilicon transistors is that output current extensively disperses because of the influence that the crystal in the channel formation region disperses.As mentioned above, light-emitting component is luminous according to the brightness that matches with the electric current that flows through.Like this, when occurring disperseing in the middle of the pixel, will cause the brightness of the light-emitting component in the pixel to disperse (hereinafter referred to as unbalanced demonstration).
Summary of the invention
The purpose of this invention is to provide a kind of Control current output circuit that forms with polysilicon transistors, output current wherein disperses and can be suppressed.
Another object of the present invention provides a kind of display device and adopts the electronic installation of this display device, adopts Control current output circuit of the present invention can realize miniaturization and low-power consumption.
The structure of driving circuit of the present invention (Control current output circuit) below will be described.
The Control current output circuit has the roughly the same current output circuit of m (m is a natural number) individual output current value and (is also referred to as current source circuit, hereinafter referred to as accurate Control current output circuit), this current value correspondence the normalized current that is input to the Control current output circuit.This m accurate Control current output circuit inside has polysilicon transistors (being exactly the TFT multi-crystal TFT just with polycrystalline silicon semiconductor film specifically) respectively.
According to the present invention, outputed to n (the n representative is equal to or less than the natural number of m) individual output line (hereinafter referred to as lead-out terminal) by mean deviation from the output current of m accurate Control current output circuit.
For example be to switch from the output current of m accurate Control current output circuit successively and output to n lead-out terminal.
That is to say that the connection of n lead-out terminal and the combination of lead-out terminal that is connected to m accurate Control current output circuit are by periodically changing.
In other words, in the time cycle of setting, can adapt the structure that n lead-out terminal is connected one to one with the individual accurate Control current output circuit of m respectively.
Specifically, at first lead-out terminal of n output circuit and second lead-out terminal with have in the Control current output circuit of the first accurate Control current output circuit and the second accurate Control current output circuit, can select the coupling arrangement that first lead-out terminal is such to be connected to the lead-out terminal of the first accurate Control current output circuit; Second lead-out terminal is connected to the lead-out terminal of the second accurate Control current output circuit; First lead-out terminal is connected to the lead-out terminal of the second accurate Control current output circuit; And second lead-out terminal is connected to the lead-out terminal of the first accurate Control current output circuit.
According to said structure, the output current of two accurate Control current output circuits is gone up average situation according to the time and is exported from first and second lead-out terminals.
Like this, the output current that outputs to n Control current line from the Control current output circuit just can obtain on average in time.
So just can provide a kind of and can suppress the driving circuit (Control current output circuit) that output current disperses.In addition, in the display that adopts driving circuit of the present invention (Control current output circuit), can disperse from visually reducing the demonstration that disperses to cause because of Control current.
In addition, according to the present invention, can be formed on the same substrate with pixel parts having on the substrate of insulating surfaces the Control current output circuit that forms with multi-crystal TFT.A kind of display device of realizing miniaturization and low-power consumption so just can be provided.
In addition, in display device of the present invention, can constitute signal-line driving circuit with many Control current output circuits, the Control current value of exporting from a plurality of Control current output circuits can differ from one another.In addition, the normalized current that is imported into a plurality of Control current output circuits can be identical.
Have separately light-emitting component although form many pixels of display device of the present invention, this light-emitting component can be the OLED element and adopt a kind of element of electron source element or the like.
Also being appreciated that, can be to adopt by singlet exciton (fluorescence) luminous element and the luminous element of employing ternary exciton (phosphorescence) according to light-emitting component of the present invention.
In addition, any material in the middle of the low molecular material, macromolecular material and medium molecule material can be as the material of the organic compound layer of light-emitting component.It should be noted that described medium molecule material is meant a kind of material that does not have purifying herein, and the length of link molecule is below 10 μ m.Organic compound layer can adopt the one deck that comprises an inorganic material layer and an organic material layer.Specifically, can use such as inorganic material such as silit as electric charge migrating layer and electric charge injection layer.
In one aspect of the invention, provide a kind of portable data assistance, having comprised:
Antenna,
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate,
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
In another aspect of the present invention, a kind of personal computer is provided, comprising:
Operating switch:
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
Aspect another, provide a kind of picture reproducer of the present invention, having comprised:
Recording medium;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
Aspect another, provide a kind of televisor of the present invention, having comprised:
Operating switch;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
Aspect another, provide a kind of head mounted display of the present invention, having comprised:
Optical system;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
In another aspect of the present invention, a kind of camera is provided, comprising:
The image receiving unit;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
Description of drawings
Fig. 1 is the structural representation of Control current output circuit of the present invention;
Fig. 2 is the structural representation of Control current output circuit of the present invention;
Fig. 3 is a sequential chart that is used for representing the driving method of Control current output circuit of the present invention;
The synoptic diagram of Fig. 4 is represented the structure of Control current output circuit of the present invention;
Fig. 5 is the structural representation of Control current output circuit of the present invention;
Fig. 6 is the structural representation of Control current output circuit of the present invention;
The synoptic diagram of Fig. 7 is represented the structure of a pixel in the display device;
The block scheme of Fig. 8 is represented the structure of conventional display spare;
Fig. 9 A represents the preparation process of display device of the present invention to the synoptic diagram of 9C;
Figure 10 A represents the preparation process of display device of the present invention to the synoptic diagram of 10C;
The synoptic diagram of Figure 11 A and 11B is represented the preparation process of display device of the present invention;
Figure 12 A represents the top view and the sectional view of display device structure of the present invention to 12C;
The synoptic diagram of Figure 13 is represented electronic installation of the present invention;
Figure 14 is the structural representation of Control current output circuit of the present invention;
Figure 15 A and 15B are the structural representations of Control current output circuit of the present invention;
Figure 16 A and 16B are the structural representations of Control current output circuit of the present invention;
Figure 17 A and 17B represent the sectional view of display device structure of the present invention;
Figure 18 represents the sectional view of display device structure of the present invention;
Figure 19 represents the sectional view of display device structure of the present invention;
Figure 20 represents the top view of display device structure of the present invention; And
Figure 21 A and 21B represent the top view of display device structure of the present invention.
Embodiment
Below to explain a kind of display device of Control current output circuit of the present invention and this Control current output circuit of employing.
Fig. 1 is a routine structural representation of Control current output circuit of the present invention.Should be noted that it is that structure with Control current output circuit 1100 is an example in the present embodiment, switch the output current of 4 accurate Control current output circuit 1102_1-1102_4 therein successively, and export from 4 lead-out terminals (lead-out terminal part) of Control current output circuit.
Control current output circuit 1100 is made up of an on-off circuit 1102 and accurate Control current output circuit 1102 (1102_1-1102_4) in Fig. 1.Accurate Control current output circuit 1102_1-1102_4 has transistor 1112_1-1112_4 respectively, and the lead-out terminal C1-C4 correspondence of accurate Control current output circuit 1102_1-1102_4 drain terminal.The gate electrode of transistor 1112_1-1112_4 is connected to the gate electrode of a reference transistor 1110.The gate electrode and the drain terminal (electrode) that connect reference transistor 1110 are from reference current 10 of flowing through between the source/drain of a reference current source circuit 1111 inputs.
Notice that the current potential on the source terminal of current potential on reference transistor 1110 source terminals (electrode) and transistor 1112_1-1112_4 is held consistent.In structure shown in Figure 1, flowed through power lead 1120 and obtain identical current potential of the source terminal of reference transistor 1110 source terminals and transistor 1112_1-1112_4.
The grid voltage of reference transistor 1110 and the gate electrode of transistor 1112_1-1112_4 are consistent, and obtain electric current I 1-I4 respectively from the drain current of transistor 1112_1-1112_4.At this moment, if the current characteristics of transistor 1112_1-1112_4 is consistent, current value I 1-I4 will equate.But because transistor 1112_1-1112_4 is multi-crystal TFT, electric current I 1-I4 is actually dispersion.Therefore, electric current I 1-I4 switches and output by on-off circuit 1101.
It is identical that the current characteristics that should be noted that the current characteristics of reference transistor 1110 and transistor 1112_1-1112_4 is not necessarily leaveed no choice but.That is to say, applying under the situation of identical grid voltage with transistor 1112 (meaning any one transistor 1112_1-1112_4) that the designer might be provided with mobile drain current according to the predetermined current ratio for reference transistor 1110.Yet mobility, characteristics such as threshold voltage should be consistent.
For example, the grid length of hypothetical reference transistor 1110 is Lo, and grid width is Wo.The grid length of supposing transistor 1112_1 is L1, and grid width is W1.If make Lo/Wo: L1/W1 is 1: 2, just can make electric current I 1 reach about 1/2 of reference current I0.
In addition, reference transistor 1110 and transistor 1102_1-1102_4 can be n channel-type TFT or p channel-type TFT, yet reference transistor 1110 must be identical with transistor 1102_1-1102_4 polarity.
Should be noted that Control current output circuit of the present invention is not limited only to this.The Control current output circuit comprises the individual accurate current output circuit of m (m is a natural number) and is used for selecting n the switchgear (n is the natural number less than m) of one of above-mentioned m accurate current output circuit that a said n switchgear has the selection adversary's of the above-mentioned m of periodically-varied accurate current output circuit function separately.
Then to explain the structure of on-off circuit 1101.On-off circuit 1101 is made up of switch SW 1-SW4.
Switch SW 1-SW4 selects terminal 1-4 (and actual selection on be not terminal but be connected to the line of these switches) respectively successively.If switch SW p (p represents the natural number of 1-4) has selected terminal q (q represents the natural number of 1-4), other switch except that switch SWp is just selected terminal q.
Terminal 1-4 is connected to the lead-out terminal C1-C4 of each different accurate Control current output circuit 1102_1-1102_4.In addition, among 4 groups of terminal 1-4 of 4 lines of Control current line CS1-CS4, be connected to the lead-out terminal C1-C4 of different accurate Control current output circuit 1102_1-1102_4 with the terminal of same symbol and digitized representation in correspondence.
Below in Fig. 2, represented the specific embodiment of switch SW 1-SW4 circuit structure.Should be noted that in Fig. 2 the part identical with Fig. 1 adopted identical symbol and numeral.
In Fig. 2, switch SW 1-SW4 is made of 4 switches respectively.These 4 switches are selected terminal 1-4 successively with the signal of line A1-A4 and line A1b-A4b input, and are connected to Control current line CS1-CS4.
The polarity that signal be should be noted that the signal that is input to line Aq (q represents the natural number of 1-4) is opposite with the signal that is input to line Aqb.
The driving method of Control current output circuit illustrated in figures 1 and 2 then will be described.The sequential chart of in Fig. 3, having represented the driving method of Control current output circuit.
A1-A4 shown in Fig. 3 and A1b-A4b represent to be input to the current potential of the signal of line A1-A4 and line A1b-A4b.In addition, frame time cycle F1-F4 represents the time cycle of a frame successively.The frame time cycle that should be noted that is exactly the time cycle that display device shows an image.Usually a frame time cycle is set to just can not make the people feel dazzling in about 1/60 second.
In the first frame time cycle F1, import a signal and select terminal 1 respectively to line A1 and line A1b respectively with switch SW 1-SW4.
In the second frame time cycle F2, import a signal and select terminal 2 respectively with switch SW 1-SW4 to line A2 and line A2b.
Repeat same operation and end frame time cycle F1 to frame time cycle F4.So just can select terminal 1-terminal 4 successively respectively with SW1-SW4.
As mentioned above, operation switching circuit 1101 just can make the temporary transient value of current value of the output current of Control current line CS1-CS4 become identical.
So just can make the electric current that outputs to Control current line CS1-CS4 obtain average in time and output.So the Control current output circuit 1100 for display device employing said structure just can be from visually reducing the irregular demonstration that pixel causes because of the Control current dispersion.
Sequential chart shown in Figure 3 is configuration like this, switches each switch SW 1-SW4 successively by each frame time cycle, and selects terminal 1-terminal 4 successively.According to above-mentioned driving method, the time cycle that some switch SW q (q represents the natural number of 1-4) select terminal 1 is set according to identical length, select the time cycle of terminal 2, select the time cycle of terminal 3 and the time cycle of selection terminal 4.
Yet the present invention is not limited to this.Can also dispose like this, switch SW 1-SW4 is switched by given length.For example can also switch each switch SW 1-SW4, and select terminal 1-terminal 4 successively by per 2 frame time cycles.
In Fig. 1 and Fig. 2, only represented corresponding the Control current output circuit of 4 Control current lines typically.But, in the display device of reality, can dispose like this, will be divided into many groups to all Control current lines of each pixel input Control current, in each group, export Control current from the Control current output circuit according to the configuration that is similar to Fig. 1.
In the configuration shown in Figure 15 A, all Control current line CS1-CSx to each pixel input Control current are divided into many groups (first group-r organizes (r represents natural number)), in each group Control current output circuit 1100_B1-1100_Br is set, its configuration is identical with Control current output circuit 1100 shown in Figure 1.
Should be noted that,, omitted relevant explanation herein because various configurations and the driving method of Control current output circuit 1100_B1-1100_Br all are similar to configuration illustrated in figures 1 and 2 and driving method shown in Figure 3.
According to the configuration of Figure 15 A, respectively the organizing Control current output circuit 1100_B1-1100_Br and can dispose like this of corresponding many group Control current lines is from common reference current source circuit input reference current I0.In addition, in Control current output circuit 1100_B1-1100_Br, can be configured to share reference resistance.
According to the configuration of Figure 15 A, in Figure 15 B, represented in Control current output circuit 1100_B1-1100_Br, to have the configuration of common reference current source circuit 1111 and reference transistor 1110.
Should be noted that, in Control current output circuit 1100_B1-1100_Br with Fig. 1 in identical part be with identical symbol and numeral.
In Figure 15 B, transistor 1112_1-1112_4 and the transistor 1112_1-1112_4 that is configured to the accurate Control current output circuit 1102_1-1102_4 of Control current output circuit 1100_B2 for the accurate Control current output circuit 1102_1-1102_4 that is configured to Control current output circuit 1100_B1, their source terminal is connected to power lead 1120, and their gate electrode is connected to the gate electrode of reference transistor 1110.
In Figure 15 B, should be noted that, although the Control current output circuit 1100_B2 of the Control current output circuit 1100_B1 of corresponding first group of Control current line CS1-CS4 and corresponding second group of Control current line CS5-CS8 represents respectively, transistor 1112_1-1112_4 for the accurate Control current output circuit 1102_1102_4 that is configured to all Control current output circuit 1100_B1-1100_Br, their source terminal is connected to power lead 1120, and their gate electrode is connected to the gate electrode of reference transistor 1110.
Like this, just equal the grid voltage of common reference transistor 1110 as that voltage of the grid voltage of the transistor 1112_1-1112_4 of the accurate Control current output circuit 1102_1-1102_4 that imposes on all Control current output circuit 1100_B1-1100_Br.
Should be noted that, in Control current output circuit 1100_B1-1100_Br, the driving timing of on-off circuit 1101 is equated.The timing of the switch SW 1-SW4 of the on-off circuit 1101 that is configured to be used among Fig. 1 to select terminal 1-terminal 4 is all equated in all on-off circuits 1101 of Control current output circuit 1100_B1-1100_Br.
For example be to be similar to a kind of example that is configured to of the configuration that is used for on-off circuit 1101 among Fig. 2.Share the line A1-A4 and the line A1b-A4b of on-off circuit 1101 at this moment by all on-off circuits 1101 of Control current output circuit 1100_B1-1100_Br.
As shown in Figure 3, so just can be to signal of line A1-A4 and line A1b-A4b input, be configured to select the timing of switch SW 1-SW4 of the on-off circuit 1101 of terminal 1-terminal 4 that all on-off circuits 1101 of Control current output circuit 1100_B1-1100_Br are all equated.
According to above-mentioned configuration, can be on all set on the pixel parts of display device Control current line CS1-CS4 output times average Control current.So just can reduce the visual distraction of light-emitting component in brightness of each pixel that display device has.
In the present embodiment, different with reference to the configuration and the configuration shown in the embodiment 1 of the Control current output circuit of Figure 14 explanation.
In Figure 14, the Control current output circuit 1440 of present embodiment has Control current output circuit 1100, is to be input to 4 Control current output circuit 1400_1-1400_4 as the reference electric current from the feature of the output current of the lead-out terminal Q1-Q4 of Control current output circuit 1100 output.Then, Control current outputs to Control current line CS1-CS16 from Control current output circuit 1400_1-1400_4.
So just can be by switching reference current and providing it to the dispersion that Control current output circuit 1400_1-1400_4 further reduces output current.
Should be noted that the configuration of Control current output circuit 1100 and Control current output circuit 1400_1-1400_4 and driving method can be made and be similar to configuration illustrated in figures 1 and 2 among the embodiment 1 and driving method shown in Figure 3.
Should be noted that in Figure 14 Control current output circuit 1100 has such configuration, periodically exchange successively from the output current of 4 lead-out terminal Q1-Q4 outputs of 4 accurate Control current output circuit 1102_1-1102_4 with on-off circuit 1101, but the present invention is not limited only to this.
The Control current output circuit 1100 of Figure 14 comprises the individual accurate current output circuit of m (m is a natural number) and is used for selecting the individual switchgear of the n of one of above-mentioned m accurate current output circuit (the n representative is less than the natural number of m) that a said n switchgear has the selection adversary's of the above-mentioned m of periodically-varied accurate current output circuit function separately.
In addition, in Figure 14, each Control current output circuit 1400_1-1400_4 has such configuration, periodically exchange successively from 4 accurate Control current output circuits with on-off circuit 1401 and to output to output current, but the present invention is not limited only to this from 4 Control current lines of 4 lead-out terminals.
Control current output circuit 1400_1-1400_4 in Figure 14 comprises the individual accurate Control current output circuit of f (f represents natural number) and is used for selecting the individual switchgear of the e of one of above-mentioned f accurate current output circuit (the e representative is less than the natural number of f) that an above-mentioned e switchgear has the selection adversary's of the above-mentioned f of periodically-varied accurate current output circuit function separately.
In Figure 14, should be noted that, only represented the Control current output circuit 1440 of 16 lines of corresponding Control current line CS1-CS16.But, in the display device of reality, can dispose like this, will be divided into many groups to all Control current lines of each pixel input Control current, in each group, export Control current from Control current output circuit 1440 according to the configuration that is similar to Figure 14.
In the configuration shown in Figure 16 A, all Control current line CS1-CSx to each pixel input Control current of display device are divided into many groups (first group-r organizes (r represents natural number)), and being provided with of the configuration of Control current output circuit 1440_1-1440_r/4 and Control current output circuit 1440 shown in Figure 16 is similar.
The Control current output circuit 1440_1-1440_r/4 configuration and the configuration of Control current output circuit 1440 shown in Figure 14 separately is similar.For example, in Figure 16, the Control current output circuit 1440_B1-1440_B4 correspondence of each Control current output circuit 1440_1 the Control current output circuit 1440_1-1440_4 among Figure 14, and Control current output circuit 1440_1 correspondence the Control current output circuit 1100 among Figure 14.
Structure according to Figure 16 A can dispose like this, allow the reference current I0 of the common reference current source circuit input from Control current output circuit 1440_1-1440_r/4 corresponding respectively many group Control current lines.
Can also be configured to allow Control current output circuit 1440_1-1440_r/4 share reference transistor in addition.
The configuration of representing in Figure 16 B is that the Control current output circuit 1440_1-1440_r/4 in the configuration shown in Figure 16 A has common reference current source circuit 1111 and reference transistor 1110.Should be noted that, among the Control current output circuit 1100_1-1100_2 in Control current output circuit 1440_1-1440_r/4, represent with identical sign digit with part identical among Figure 14.
In Figure 16 B, transistor 1112_1-1112_4 and the transistor 1112_1-1112_4 that is configured to the accurate Control current output circuit 1102_1-1102_4 of Control current output circuit 1100_2 for the accurate Control current output circuit 1102_1-1102_4 that is configured to Control current output circuit 1100_1, their source terminal is connected to power lead 1120, and their gate electrode is connected to the gate electrode of reference transistor 1110.
In Figure 16 B, should be noted that, although the Control current output circuit 1440_2 of the Control current output circuit 1440_1 of corresponding first group of the-the 4th group of Control current line CS1-CS16 and corresponding the 5th group of the-the 8th group of Control current line CS17-CS32 represents respectively, yet, transistor 1112_1-1112_4 for the accurate Control current output circuit 1102_1-1102_4 of the Control current output circuit 1440_1-1440_r/4 that is configured to all Control current output circuit 1440_1-1440_r/4, their source terminal is connected to power lead 1120, and their gate electrode is connected to the gate electrode of reference transistor 1110.
Like this, just equal the grid voltage of common reference transistor 1110 as that voltage of the grid voltage of the transistor 1112_1-1112_4 of the accurate Control current output circuit 1102_1-1102_4 of the Control current output circuit 1440_B1-1440_r/4 that imposes on all Control current output circuit 1440_B1-1440_r/4.
Should be noted that, in Control current output circuit 1100_1-1100_r/4, the driving timing of on-off circuit 1101 is equated.The timing of the switch SW 1-SW4 of the on-off circuit 1101 that is configured to be used among Fig. 1 to select terminal 1-terminal 4 is all equated in all on-off circuits 1101 of Control current output circuit 1100_B1-1100_r/4.
For example be to be similar to a kind of example that is configured to of the configuration that is used for on-off circuit 1101 among Fig. 2.Share the line A1-A4 and the line A1b-A4b of on-off circuit 1101 at this moment by all on-off circuits 1101 of Control current output circuit 1100_B1-1100_r/4.
As shown in Figure 3, so just can be to signal of line A1-A4 and line A1b-A4b input, be configured to select the timing of switch SW 1-SW4 of the on-off circuit 1101 of terminal 1-terminal 4 that all on-off circuits 1101 of Control current output circuit 1100_1-1100_r/4 are all equated.
The driving timing that should be noted that all circuit 1401 of the driving timing of on-off circuit 1101 of Control current output circuit 1100_1-1100_r/4 and Control current output circuit 1400_B1-1400_Br can be by independently regularly carrying out.
According to above-mentioned configuration, can be on all set on the pixel parts of display device Control current line CS1-CSx output times average Control current.So just can reduce the visual distraction of light-emitting component in brightness of each pixel that display device has.
According to the configuration shown in Figure 15 B among the embodiment 1, corresponding not on the same group the dispersion of the output current between the Control current output current of Control current line can not become problem.
On the other hand, according to present embodiment configuration as shown in figure 14, can export from the output current of one of lead-out terminal of Control current output circuit 1100 and to disperse less electric current, and temporary transient with Control current output circuit 1400_1-1400_4 or the like on average to many Control current lines.At this moment, the electric current of Control current output circuit 1400_1-1400_4 output has been temporarily by the Control current of average and less dispersion.
Therefore, if adopt the configuration of present embodiment 2, just can reduce supply correspondence respectively the not dispersion of the output current of Control current line on the same group of Control current output circuit 1440_1-1440_r/4.
In the present embodiment, make up a plurality of Control current output circuit of the present invention as shown in figure 14, can further reduce the dispersion of the electric current that the Control current output circuit exported like this.
Example
Example 1
A kind of display device with a plurality of Control current output circuits will be described in this example, and the Control current value of each Control current output circuit is provided with differently.
In this example of the following stated, should be noted that, the display device of input digital video signal to the input of pixel corresponding the analog current of digital video signal of input as Control current, and carries out image shows.
The Control current correspondence of being exported respectively by a plurality of Control current output circuits the tone reference current herein.Should be noted that the tone reference current is a kind of like this electric current, its current value correspondence digital video signal each position from a high position to the low level and is weighted.
Corresponding tone reference current is selected with digital video signal.So just digital video signal can be transformed into the corresponding simulating electric current.Then analog current is outputed to the Control current line.
The part that a plurality of Control current output circuits shown in this example can be used as signal-line driving circuit is the pixel current input signal.
Fig. 4 represents the structural representation of signal-line driving circuit 220, has represented display device of the present invention in the drawings.
Below to an example be described, import one 3 bit digital vision signal in the drawings, and export corresponding analog current as Control current with reference to Fig. 4.
Signal-line driving circuit 220 has the first Control current output circuit 200A, the second Control current output circuit 200B, the 3rd Control current output circuit 200C, D/A conversion fraction 203, shift register 211, the first latch cicuits 212 and second latch cicuit 213.
The first Control current output circuit 200A has the first accurate Control current output circuit 202A and the first on-off circuit 201A that is made up of 4 accurate Control current output circuits.
The second Control current output circuit 200B has the second accurate Control current output circuit 202B and the second switch circuit 201B that is made up of 4 accurate Control current output circuits.
The 3rd Control current output circuit 200C has the 3rd accurate Control current output circuit 202B and the 3rd on-off circuit 201C that is made up of 4 accurate Control current output circuits.
In Fig. 4, structure of each Control current output circuit (the first Control current output circuit 200A, the second Control current output circuit 200B and the 3rd Control current output circuit 200C) and the structure shown in the embodiment are much at one.
Yet the set weighted current value correspondence of current value of the electric current (hereinafter referred to as the first tone reference current) of first Control current output circuit 200A output first of the digital video signal that is input to display device.The set weighted current value correspondence of current value of the electric current (hereinafter referred to as the second tone reference current) of second Control current output circuit 200B output second of the digital video signal that is input to display device.And the set weighted current value correspondence of current value of the electric current (hereinafter referred to as the three color scheme reference current) of the 3rd Control current output circuit 200C output the 3rd of the digital video signal that is input to display device.
In addition, in this example, the example that below will explain is 4 lead-out terminals that 4 output currents of the accurate Control current output circuit in each circuit of the first Control current output circuit 200A-the 3rd Control current output circuit 200C were exchanged and outputed to the Control current output circuit successively.
Should be noted that Control current output circuit of the present invention is not limited only to this.Control current output circuit of the present invention comprises the individual accurate current output circuit of m (m is a natural number) and is used for selecting n the switchgear (n is the natural number less than m) of one of above-mentioned m accurate current output circuit that a said n switchgear has the selection adversary's of the above-mentioned m of periodically-varied accurate current output circuit function separately.
In this example, the first Control current output circuit 200A-the 3rd Control current output circuit 200C output current separately is imported into D/A conversion fraction 203 respectively.
In addition, one 3 bit digital vision signal is transfused to signal-line driving circuit 220 from line VD1-VD3.First (highest significant position) signal supposing digital video signal herein is imported into line VD1.Second signal supposing digital video signal is imported into line VD2.And the 3rd (least significant bit (LSB)) signal of digital video signal is imported into line VD3.
Below to explain operation to the 3 bit digital video signal samplings that are input to signal-line driving circuit 220.
Should be noted that in this example, suppose that display device has x (x represents natural number) row pixel.
The example of having represented a kind of configuration in Fig. 6 is therein by shift register 211, the first latch cicuits 212 and second latch cicuit 213 of being provided with shown in Figure 4.
Time clock S_CLK, the reverse time clock S_CLKB that polarity is opposite with this time clock, an initial pulse S_SP and a direction of scanning switching signal L/R are transfused to shift register 211.So just can be with displacement resistance successively to terminal 211_1-211_x output shift pulse (sampling pulse).
Only represented a part of 212_1 of first latch cicuit and a part of 213_1 of second latch cicuit in Fig. 6 typically, their correspondences that part of output first pixel column.
The digital video signal that will be input to line VD1-VD3 by the impulse sampling that the shift register 211 that enters 211_1 is exported is kept among each frame 212a_1-212a_3 of the first latch cicuit 212_1 simultaneously.When first latch cicuit has been preserved 3 bit digital vision signals of a pixel rows part, with reverse latch pulse LPB the signal of all preservations once is sent to each frame 213a_1-213a_3 of the second latch cicuit 213_1, the polarity of latch pulse LP and latch pulse are reverse.The signal that is kept among each frame 213a_1-213a_3 of the second latch cicuit 213_1 is output to line S1d_1-line S1d_3.
Like this, second latch cicuit 213 just once output corresponding 3 bit digital vision signals of each pixel in pixel rows.
The output of second latch cicuit 213 is imported into D/A conversion fraction 203.
Still, in D/A conversion fraction 203, utilize from the digital video signal of second latch cicuit, 213 inputs and select first tone reference current-three color scheme reference current with reference to Fig. 4.Like this, D/A conversion fraction 203 just can to Control current line CS1-CS4 output corresponding the analog current of digital video signal (marking current).
Should be noted that as constituting signal-line driving circuit, the configuration of the shift register 211 of first latch cicuit 212 and second latch cicuit 213 can be adopted various circuit with known configurations.
In addition, can replace shift register 211 to use with demoder or the like.
The first Control current output circuit 200A that in Fig. 5, has represented the signal-line driving circuit 220 in the structure shown in Figure 4, the circuit diagram of the concrete structure of the second Control current output circuit 200B and the 3rd Control current output circuit 200C and D/A conversion fraction 203.
Below to explain the structure and the working method of signal-line driving circuit 220 with reference to Fig. 5.
The first accurate Control current output circuit 202A constitutes by 4 accurate Control current output circuit 111_1-114_1 of deposit.The second accurate Control current output circuit 202B constitutes by 4 accurate Control current output circuit 111_2-114_2 of deposit.The 3rd accurate Control current output circuit 202C constitutes by 4 accurate Control current output circuit 111_3-114_3 of deposit.
Because the gate electrode and the drain terminal of reference transistor 100 are interconnective, when reference transistor 100 was drawn drain current, it was operated in the saturation region.At this moment, an electric current I 0 from reference current source circuit 1111 inputs is imported between the source/drain terminal of reference transistor 100.Like this, reference transistor 100 just flows through certain drain current I0.
In Fig. 5, for reference transistor 100, constitute the transistor 101_1-104_1 of 4 accurate Control current output circuit 111_1-114_1 of the first accurate Control current output circuit 202A, constitute the transistor 101_2-104_2 of 4 accurate Control current output circuit 111_2-114_2 of the second accurate Control current output circuit 202B, all their source terminal is connected to power lead with the transistor 101_3-104_3 of 4 accurate Control current output circuit 111_3-114_3 that constitute the 3rd accurate Control current output circuit 202C, and their gate electrode connects with circuit.
So just can make the grid voltage and the transistor 101_1-104_1 of reference transistor 100, the grid voltage of 101_2-104_2 and 101_3-104_3 keeps equating.
The drain terminal correspondence of transistor 101_1-104_1 the lead-out terminal of the first accurate Control current output circuit, the drain terminal correspondence of transistor 101_2-104_2 the lead-out terminal of the second accurate Control current output circuit, and the drain terminal correspondence of transistor 101_3-104_3 the lead-out terminal of the 3rd accurate Control current output circuit.
Yet the grid width W1 and the grid length L1 that constitute the transistor 101_1-104_1 of the first accurate Control current output circuit 111_1-114_1 equate to be provided with.In addition, the grid width W2 of transistor 101_2-104_2 and the grid length L2 that constitutes the second accurate Control current output circuit 111_2-114_2 equates to be provided with.And the grid width W3 and the grid length L3 that constitute the transistor 101_3-104_3 of the 3rd accurate Control current output circuit 111_3-114_3 equate to be provided with.With the ratio W1/L1 of grid width W1 and grid length L1, the ratio W2/L2 of grid width W2 and grid length L2 is arranged on different values with the ratio W3/L3 of grid width W3 and grid length L3 herein.
For example can suppose that W1/L1: W2/L2: W3/L3 is 4: 2: 1.In this case, can make the mean value I_1 of current value of the electric current I 1_1-I4_1 of first accurate Control current output circuit 111_1-114_1 output, the ratio of the mean value I_3 of the current value of the electric current I 1_3-I4_3 of the mean value I_2 of the current value of the electric current I 1_2-I4_2 of the second accurate Control current output circuit 111_2-114_2 output and the 3rd accurate Control current output circuit 111_3-114_3 output reaches 4: 2: 1.
At this moment, for reference transistor 100 and transistor 101_1-104_1,101_2-104_2 and 101_3-104_3, although they can be n channel-type TFT or p channel-type TFT, reference transistor 100 and transistor 101_1-104_1, the polarity of 101_2-104_2 and 101_3-104_3 must be identical.
The electrical characteristics of transistor 101_1-104_1 are consistent, and the current value of electric current I 1_1-I4_1 is equal to each other.The electrical characteristics of transistor 101_2-104_2 are consistent, and the current value of electric current I 1_2-I4_2 is equal to each other.The electrical characteristics of transistor 101_3-104_3 are consistent, and the current value of electric current I 1_3-I4_3 is equal to each other.Yet because transistor 101_1-104_1,101_2-104_2 and 101_3-104_3 are multi-crystal TFTs, the dispersion of electric current I 1_1-I4_1, and the dispersion of the dispersion of electric current I 1_2-I4_2 and electric current I 1_3-I4_3 is actually very big.
Below to explain switch SW 1_1-SW1_3, SW2_1-SW2_3, the structure of SW3_1-SW3_3 and SW4_1-SW4_3.
For example be to use switch SW 1_1, SW2_1, SW3_1 and SW4_1 be according to each frame time cycle PCS1_1, PCS2_1, the output current I1_1-I4_1 of PCS3_1 and the PCS4_1 periodical exchange first accurate Control current output circuit 111_1-114_1, and output.
For example be to use switch SW 1_2, SW2_2, SW3_2 and SW4_2 be according to each frame time cycle PCS1_2, PCS2_2, the output current I1_2-I4_2 of PCS3_2 and the PCS4_2 periodical exchange second accurate Control current output circuit 111_2-114_2, and output.
For example be to use switch SW 1_3, SW2_3, SW3_3 and SW4_3 be according to each frame time cycle PCS1_3, PCS2_3, the output current I1_3-I4_3 of PCS3_3 and PCS4_3 periodical exchange the 3rd accurate Control current output circuit 111_3-114_3, and output.
Corresponding each accurate Control current output circuit (111_1-114_1 of each group, 111_2-114_2 and 111_3-114_3) the structure of switch (SW1_p-SW4_p) and driving method thereof can be similar among Fig. 2 the sequential chart of Fig. 3 in the structure shown in the SW1-SW4 and embodiment, therefore omitted relevant explanation herein.
With said structure correspondence the PCS1_1 of the first tone reference current, PCS2_1, the electric current of PCS3_1 and PCS4_1 output is temporarily average.In addition, correspondence the PCS1_2 of the second tone reference current with said structure, PCS2_2, the electric current of PCS3_2 and PCS4_2 output is temporarily average.With said structure correspondence the PCS1_3 of three color scheme reference current then, PCS2_3, the electric current of PCS3_3 and PCS4_3 output is temporarily average.
Below to explain D/A conversion fraction 203.
This part to Control current line CS1 output signal electric current constitutes by deposit transistor 401_1-401_3.
By line S1d_1 from second latch cicuit 213 first to the gate electrode input digital video signal of transistor 401_1.Source terminal or the drain terminal of transistor 401_1 are connected to PCS1_1, and another terminal is connected to Control current line CS1.
By line S1d_2 from second latch cicuit 213 second to the gate electrode input digital video signal of transistor 401_2.Source terminal or the drain terminal of transistor 401_2 are connected to PCS1_2, and another terminal is connected to Control current line CS1.
By line S1d_3 from second latch cicuit 213 the 3rd to the gate electrode input digital video signal of transistor 401_3.Source terminal or the drain terminal of transistor 401_3 are connected to PCS1_3, and another terminal is connected to Control current line CS1.
That part of corresponding Control current line CS2-CS4 also is similar to corresponding that part of Control current line CS1.
In the middle of the transistor 401_1-401_3 of D/A conversion fraction 203 by by via line S1d_1-S1d_3 from that transistor of the digital video signal conducting of second latch cicuit 213 input to that part of Control current line CS1 output signal electric current, first tone reference current-three color scheme reference current is to select to flow.So just can the analog signal current of digital video signal to correspondence of Control current line CS1 output.
Equally Control current line CS2-CS4 is also exported corresponding the analog signal current of digital video signal.
So just can in those pixels of the analog signal current input that each bar drawing electric current line CS1-CS4 is exported, disperse from the brightness that visually reduces its light-emitting component.
Should be noted that in this example, only is to have represented corresponding the Control current output circuit of 4 Control current lines typically.In general, all Control current lines from Control current to each pixel of display device that import are divided into many groups, and are to dispose like this in each group, from being similar to the Control current output circuit output Control current of Fig. 4 and structure shown in Figure 5.
So just can disperse from the brightness of the light-emitting component of each pixel of visually reducing display device and being had.
Should be noted that for the display device in this example, be used to control the luminosity of the light-emitting component of each pixel as the analog signal current of Control current input, and the pixel that is used to show can adopt any kind.For example be in common example, can adopt pixel structure shown in Figure 7.
Be that signal control circuit with such formation is an example in this example, promptly a plurality of Control current output circuits are shared a reference current source circuit and are produced a plurality of tone reference currents, but the present invention also is not limited only to this.The present invention can also be applied to a kind of like this signal-line driving circuit of structure, and the reference current source circuit of the electric current of the different current values of output can be provided respectively for a plurality of Control current output circuits therein.
Example 2
To be described in this example on the substrate with insulating surfaces and form the pixel parts of display device of the present invention and a kind of technology of driving circuit section with TFT.
In brief,, represented to be used for to select a switching transistor typically, for light-emitting component provides a driving transistors of electric current and a light-emitting component to the pixel current input signal as the element that constitutes pixel.Equally also represented typically to constitute the element of driving circuit section just by a n channel transistor and the cmos circuit that the p channel transistor is formed.
At first shown in Fig. 9 A, on the substrate 5001 that constitutes such as glass such as barium borosilicate glass or aluminium borosilicate glass that Coning Corporation indicates with #7059 glass and #1737 glass, form such as silicon oxide film the substrate film 5002 that insulation films such as silicon nitride film or silicon oxynitride film constitute.For example be with plasma CVD method SiH
4, NH
3And N
2O forms the silicon oxynitride film 5002a of a thickness from 10 to 200nm (preferably 50 to 100nm).Similarly, use SiH in the above
4, NH
3And N
2The stacked thickness of O is from the silicon oxynitride film 5002b of the hydrogenation of 50 to 200nm (preferably 100 to 150nm).In this example, substrate film 5002 has double-decker, but also can be the individual layer that forms with above-mentioned a kind of insulation film, or has the laminate film of two-layer above above-mentioned insulation film.
Then formation has the semiconductive thin film of non-crystal structure, and is patterned into island semiconductor layer 5003 to 5006.Obtain the crystalline solid semiconductive thin film having on the semiconductive thin film of non-crystal structure the laser crystal method of execution or known thermal crystalline method then.These island semiconductor layers 5003 to 5006 have the thickness of 25 to 80nm (preferably 30 arriving 60nm) separately.To the material of semiconductive thin film without limits, but preferably use silicon, SiGe (SiGe) alloy etc. form semiconductive thin film.
If make the crystalline solid semiconductive thin film, will use impulse hunting formula or continuous illuminated excimer laser, YAG laser instrument and YVO4 laser instrument with laser crystal method.Preferably adopt a kind of like this method when using these laser instruments, the laser beam of a laser oscillator being sent with optical system pools rectilinear form and shines on the semiconductive thin film.Suitably select a kind of crystalline state by operating personnel.If the use excimer laser, the impulse hunting frequency is set at 30Hz, and laser energy density is arranged on 100 to 400mj/cm
2(normally 200 arrive 300mj/cm
2).If use the YAG laser instrument, just utilize its second harmonic that the impulse hunting frequency is set at 1 to 10kHz, and laser energy density is preferably disposed on 300 to 600mj/cm
2(normally 350 arrive 500mj/cm
2).Pooling rectilinear form and having 100 to 1000 μ m for example is that the laser beam of 400 μ m width is irradiated on the entire substrate surface.This moment, the Duplication with linear beam was arranged on 50 to 98%.
Then form a grid insulating film 5007 that covers island semiconductive layer 5003 to 5006.Adopting plasma CVD method or sputtering method is 40 to 50nm insulation films formation grid insulating film 5007 with a kind of siliceous and thickness.Be to be the silicon oxynitride film formation grid insulating film 5007 of 120nm with thickness in this example.Yet grid insulating film is not limited in this silicon oxynitride film, can also be to contain other silicon and have individual layer or the insulation film of stepped construction.For example, when using silicon oxide film, mix TEOS (TetraethylOrthosilicate) and O with the plasma CVD method
2, reaction pressure is arranged on the 40Pa underlayer temperature is arranged on 300 to 400 ℃, and high frequency (13.56MHz) power density of discharge is set at 0.5 to 0.8W/cm
2So just can form silicon oxide film by discharge.The silicon oxide film of Zhi Zaoing can obtain Ideal Characteristics as the grid insulating film at 400 to 500 ℃ of following thermal annealings in this way.
First conductive film 5008 and second conductive film 5009 that form gate electrode are formed on above the grid insulating film 5007.In this example, forming thickness with Ta is 50 to 100nm first conductive film 5008, and to form thickness with W be 100 to 300nm second conductive film 5009.
Form the Ta film with sputtering method, with the target of Ar sputter Ta.In this case, if in Ar, add an amount of Xe and Kr, just can discharge Ta film inside stress in case film peel off.The resistivity of the Ta film of α phase approximately is 20 μ Ω cm, and this Ta film can be used as gate electrode.Yet the resistivity of the Ta film of β phase approximately is 180 μ Ω cm, is not suitable for being used as gate electrode.If be pre-formed crystalline texture and α Ta mutually near and tantalum nitride with 10 to 50nm thickness form the Ta film of α phase as the substrate of Ta film, the Ta film of acquisition α phase easily just.
Form W film as target with sputtering method with W.Also can use in addition tungsten hexafluoride (
WF
6) press the hot CVD method and form W film.Under any circumstance all needing to reduce resistance could be with this film as gate electrode.The resistivity of W film should be arranged on and be equal to or less than 20 μ Ω cm.If increase the W film grain size number, just can reduce the resistivity of W film.Yet,, will hinder crystallization resistivity is risen if having in the W film such as the many impurity elements of oxygen or the like.Therefore, when adopting sputtering method, to use purity at 99.9999% or 99.99% W target, and will form W film very finely, when the formation film, can not have the impurity of gas phase to sneak into W film.So just can obtain the resistivity of 9 to 20 μ Ω cm.
In this example, first conductive film, 5008 usefulness Ta form, and second conductive film, 5009 usefulness W form.Yet the present invention is not limited only to this situation.Also can be from Ta, W, Ti, Mo, Al and Cu or be that a kind of unit of selecting in the alloy material of principal ingredient or the compound-material usually forms these films with these elements.Can be the semiconductive thin film of representative also in addition with the polysilicon membrane that is doped with such as impurity elements such as phosphorus.The example of other combination except that shown in this example comprises: form first conductive film 5008 with tantalum nitride (TaN), and form the combination of second conductive film 5009 with W; Form first conductive film 5008 with tantalum nitride (TaN), and form the combination of second conductive film 5009 with Al; And form first conductive film 5008, and form the combination of second conductive film 5009 with Cu with tantalum nitride (TaN).
Then form a mask 5010, and carry out first etching step that forms electrode and line with resist.Adopt ICP (Inductively Coupled Plasma) engraving method in this example, use CF
4And Cl
2With a kind of gas mixing carrying out etching.Under the pressure of 1Pa, the electrode of coil type is applied RF (13.56MHz) the power generation plasma of 500W.Also to apply RF (13.56MHz) power of 100W, and apply a significantly reverse self-bias voltage substrate one side (sampling stage).At mixed C F
4And Cl
2The time, W film is identical with the etched degree of Ta film.
Under above-mentioned etching condition, as long as the mask that resist is constituted is made suitable shape, the end of first conductive layer and second conductive layer will form taper because of the effect of the bias voltage that is applied to substrate one side.The angle at taper position is set at 15 ° to 45 °.Preferably carry out etching, in order to avoid on the gate electrode film, stay residue in 10 to 20% ratio increase etching period.Because the selection percentage of silicon oxynitride film and W film is 2 to 4 (normally 3), the exposure of silicon oxynitride film is crossed etching step and is etched away 20 and arrive 50nm.So just can form the conductive layer 5011 to 5016 (the first conductive layer 5011a to 5016a and the second conductive layer 5011b to 5016b) of first shape that constitutes by first and second conductive layers with first etching step.In grid insulating film 5007,, form the zone of an attenuation not by regional etched 20 to 50nm of conductive layer 5011 to 5016 coverings of first shape.
Carry out the first doping step then a kind of impurity element of the n of providing type electric conductivity is provided.Doping method can adopt ion doping method or ion injection method.Ion doping method is carried out under the following conditions, and impurity is set at 1 * 10
13To 5 * 10
14Individual atom/cm
2, and accelerating potential is set at 60 to 100keV.With a kind of element that belongs to 15 families for example is that phosphorus (P) or arsenic (As) provide n type electric conductivity as impurity element.Yet that use is phosphorus (P) herein.In this case, conductive layer 5011 to 5015 is used as mask with respect to the impurity element that n type electric conductivity is provided, and forms first impurity range 5017 to 5025 with method for self-calibrating.According to 1 * 10
20To 1 * 10
21Individual atom/cm
3Concentration range in first impurity range 5017 to 5025, add the impurity element of n type electric conductivity (Fig. 9 B) be provided.
Then shown in Fig. 9 C, need not carry out second etching step by mobile Etching mask 310.Use CF4, Cl2 and O2 select the etching W film as etching gas.Form the conductive layer 5026 to 5031 (the first conductive layer 5026a to 5031a and the second conductive layer 5026b to 5031b) of second shape with second etching step.The zone that is not covered by the conductive layer 5026 to 5031 of second shape in the grid insulating film 5007 is further etched away 20 to 50nm, form the zone of an attenuation.
Using CF
4And Cl
2Mixed gas etching W film or the etching reaction during the Ta film can obtain with the steam pressure of the atomic group that produces or ion and reaction product.If fluoride and the halid steam pressure of W and Ta are compared, as the WF of the fluoride of W
6Steam pressure very high, and other WCl
5, TaF
5And TaCl
5Steam pressure be about equally each other.Therefore, W film and Ta film all are to use CF
4And Cl
2Mixed gas is etched.Yet, if in mixed gas, add an amount of O
2, CF
4With O
2Can react becomes CO and F, thereby produces a large amount of F atomic groups or F ion.Its result just can increase the etching speed that its fluoride has the W film of high steam pressure.In contrast, when F increased, the etching speed of Ta film increased fewer.Because Ta than the easier oxidation of W, adds O
2Can make the surface oxidation of Ta film.Because do not have the Ta of oxidation and fluoride or halogenide to react, the etching speed of Ta film is further reduced.So just can between W film and Ta film, obtain different etching speeds, be provided with the etching speed of W film than the etching speed height of Ta film.
Shown in Figure 10 A, carry out the second doping step subsequently.Dosage is reduced to below the dosage of the first doping step in this case, provide the dopant dose of impurity element of n type electric conductivity littler, and accelerating potential is higher than the first doping step.For example be to will speed up voltage to be arranged on 70 to 120keV, and dosage is set at 1 * 10
13Individual atom/cm
2New impurity range of the inner formation of first impurity range that so just can in the island semiconductor layer of Fig. 9 B, form.When mixing, the conductive layer 5026 to 5030 of second shape is also carried out doping as the mask with respect to impurity element, also add impurity element to first zone of conductive layer 5026a below 5030a.So just formed the 3rd extrinsic region 5032 to 5036.The 3rd extrinsic region 5032 to 5036 phosphorous (P), and have the mild concentration gradient that conforms to the thickness gradient at the taper position of 5030a with the first conductive layer 5026a.With the first conductive layer 5026a in the overlapping semiconductor layer in the taper position of 5030a, impurity concentration around centre is lower than the concentration of the first conductive layer 5026a to the edge, taper position of 5030a slightly.Yet this difference is trickle, and whole semiconductor layer almost keeps identical impurity concentration.
Shown in Figure 10 B, carry out the 3rd etch processes then.Use CHF
6As etching gas, and adopt reactive ion etching (RIE).Local etching falls the taper position of the first conductive layer 5026a to 5030a in the 3rd etching treatment procedure, to dwindle first conductive layer and semiconductor layer overlapping areas.So just formed the 3rd shape conductive layer 5037 to 5043 (the first conductive layer 5037a to 5042a and the second conductive layer 5037b to 5042b).Further at this moment etching grid insulation film 5007 is not by the zone of the 3rd shape conductive layer 5037 to 5043 coverings and make its attenuation 20 to 50nm.
Form the 3rd extrinsic region 5032 to 5036 by the 3rd etch processes.Between first extrinsic region and the 3rd extrinsic region each self-forming respectively with the first conductive layer 5037a to overlapping the 3rd extrinsic region 5032a of 5041a to 5036a and the second extrinsic region 5032b to 5036b.
Shown in Figure 10 C, in order to form p channel-type TFT, the 4th extrinsic region 5043 to 5054 of the conduction type of the formation and first conductivity type opposite in island semiconductor layer 5004 and 5006.Stop the mask of impurity element with the 3rd shape conductive layer 5038b and 5041b conduct, and press method for self-calibrating formation extrinsic region.At this moment with the island semiconductor layer 5003 and 5005 of an Etching mask 5200 whole coverings will formation n channel-type TFT.Extrinsic region 5043 to 5054 has been doped the phosphorus of variable concentrations.By ion doping to extrinsic region 5043 to 5054 doping diborane (B
2H
6), and in each extrinsic region, impurity concentration is arranged on 2 * 10
20To 2 * 10
21Individual atom/cm
3
In each island semiconductor layer, form extrinsic region by above step.Can be used as gate electrode with the 3rd shape conductive layer 5037 of island semiconductor ply to 5041.And 5042 can be used as the island signal wire.
Execution makes the step of the impurity element activation of adding in the island semiconductor layer with the control conduction type after removing resist 5200.This step is to carry out with the heating anneal method in the smelting furnace of a heating anneal.Also can adopt laser annealing activation or flash annealing method (RTA method) in addition.According to the heating anneal method, this step is for example to be to carry out in nitrogen environment under 500 to 600 ℃ the temperature at 400 to 700 ℃, and wherein the concentration of oxygen is equal to or less than 1ppm, preferably is equal to or less than 0.1ppm.Be the thermal treatment of carrying out four hours down at 500 ℃ in this example.The link material of using in 5042 when the 3rd shape conductive layer 5037 is met thermal change when soft, and preferably insulation film (is principal ingredient with silicon) is carried out activation afterwards again with protection line or the like between cambium layer.And then in comprising 3 to 100% hydrogen environment, under 300 to 450 ℃ temperature, carry out 1 to 12 hour thermal treatment, the island semiconductor layer is hydrogenated.This step is to receive the dangling bonds of semiconductor layer with the hydrogen knot that is subjected to thermal excitation.Also can carry out plasma hydrogenation (with the hydrogen of plasma exciatiaon) as the another kind of means of hydrogenation.
Shown in Figure 11 A, be insulation film 5055 between 100 to 200nm silicon oxynitride films formation ground floor then with thickness.Forming insulation film 5056 between the second layer with organic insulation on the insulation film between ground floor.Form then and connect insulation film 5055 between ground floor, the contact hole of insulation film 5056 and grid insulating film 5007 between the second layer, and composition with form line (comprise and is connected line and signal link) 5057 to 5062 and 5067 after composition and formation be connected to a pixel capacitors 5063 that is connected line 5062.
With the film of an organic resin material as insulation film between the second layer 5056.Organic resin can adopt polyimide, polyamide, polypropylene, BCB (benzocyclobutene) or the like.Particularly because insulation film 5056 is mainly for smooth and is provided with between the second layer, polypropylene is smooth useful especially to the maintenance film.Be to form a polypropylene film in this example, the difference in level that its thickness is enough to TFT is caused flattens smooth.Preferably its film thickness is arranged on 1 to 5 μ m (it is best to be arranged on 2 to 4 μ m).
When forming contact hole, to form respectively and reach n type extrinsic region 5017,5018,5021 and 5023 or the contact hole of p type extrinsic region 5043 to 5054, reach the contact hole of line 5042, reach the contact hole (not shown) of power supply line and reach the contact hole (not shown) of gate electrode.
And then by reservation shape to the laminate film composition of three-decker and be used as and connect line 5057 to 5062 and 5064.In this three-decker, form the Ti film that thickness is 100nm, an aluminium film that contains Ti and the Ti film that thickness is 150nm that thickness is 300nm continuously with sputtering method.Can certainly adopt other conductive film.
Be that ito thin film that to form a thickness be 110nm is as pixel capacitors 5063, and to its composition in this example.Pixel capacitors 5063 is touched connect line 5062 and with to be connected line 5062 overlapping and form and contact.A kind of transparent conductive film that also can adopt the potpourri of 2 to 20% zinc paste (ZnO) and indium oxide to constitute in addition.This pixel capacitors 5063 is used as the anode (Figure 11 A) of light-emitting component.
Shown in Figure 11 B, then forming a siliceous and thickness is the insulation film (being silicon oxide film in this example) of 500nm.Form the 3rd a layer insulation film 5065 as the edge, the position of corresponding therein pixel capacitors 5063 forms an opening.When forming opening, make the sidewall of opening form taper with wet etching easily.If the sidewall of opening is mild inadequately, horizontal difference will become serious problem to the defective that organic compound layer causes.
Then in closed environment, form an organic compound layer 5066 and a negative electrode (MgAg electrode) 5067 continuously with the vacuum evapn method.The thickness of organic compound layer 5066 is 80 to 200nm (normally 100 arriving 120nm), and the thickness of negative electrode 5067 is 180 to 300nm (normally 200 arriving 250nm).
In this step, with respect to the pixel of corresponding red coloration, corresponding green pixel and corresponding blue pixel form organic compound layer successively.In this case, because organic compound layer is not enough to tolerate solution, can not adopts photoetching process, but will form organic compound layer of all kinds separately.Thereby need only select to form organic compound layer with the position of metal mask covering except that required pixel at desired area.
Specifically, a mask that covers all sites except that the pixel of corresponding red coloration is set at first, selects to form the organic compound layer of red-emitting with this mask.Next is provided with a mask that cover to remove all sites corresponding the green pixel, with the organic compound layer of this mask selection formation transmitting green light.A mask that cover to remove all sites corresponding the blue pixel then is set equally, selects formation to launch the organic compound layer of blue light with this mask.Adopt different masks herein rather than reuse same mask.
The system of Cai Yonging forms corresponding three kinds of light-emitting components of RGB herein.Yet, the system that also can adopt the light-emitting component that to launch white light and chromatic filter to be made up, light-emitting component and a kind of fluorescent substance (fluorescent color transformation medium: the system that CCM) is made up with emission blue light or blue green light, and utilize transparency electrode to make respectively corresponding R, G, a kind of system that the light-emitting component of B and negative electrode (comparative electrode) are overlapping.
Then to form negative electrode 5067.Negative electrode 5067 in this example adopts MgAg, but is not limited only to this.Negative electrode 5067 also can adopt other material known.
To with thickness passive film 5068 of silicon nitride film formation of 300nm at last.Prevent to pollute with passive film 5068 protection organic compound layers 5066, further improve the reliability of light-emitting component.Yet not necessarily to form passive film 5068.
So just made a luminescent device of structure shown in Figure 11 B.In the manufacture process of this routine display device, because the structure and the technology of circuit, although signal wire is to form with material Ta that forms gate electrode and W, and the signal line is to form with the materials A l that forms drain electrode and source electrode, also can use different materials.
Luminescent device in this example is because of not only also having adopted the TFT that optimizes on the structure to have very high reliability in driving circuit and improved operating performance in pixel parts.In crystallisation step, can mix in film promotes crystallization such as metallic catalysts such as Ni.By promoting that crystallization just can be set to the driving frequency of signal-line driving circuit 10MHz or higher.
To adopt TFT with the structure that can reduce that hot carrier is injected and don't reduce operating speed n channel TFT as the cmos circuit that constitutes driving circuit section at first, as far as possible.
In example 2, the active layer of n channel TFT comprises source area, the drain region, LDD (light dope drain electrode) district overlapping and that grid insulating film is clipped in the middle (Lov district) with gate electrode, the LDD district (Loff district) not overlapping and that grid insulating film is clipped in the middle with gate electrode, and channel formation region.
Do not need too to worry the deterioration problem of the p channel TFT of cmos circuit here, therefore not necessarily want specifically created LDD district because of the hot carrier injection.Certainly, as a kind of measure that stops hot carrier, also can resemble and form the LDD district the n channel TFT.
In addition, if adopt the cmos circuit that electric current can two-way flow in channel formation region, the role exchange of source area and drain region in the cmos circuit just just should form the LDD district in the both sides of the channel formation region of the n channel TFT that constitutes cmos circuit, and channel formation region is clipped in the middle.In addition, if adopt the cmos circuit that can suppress the cut-off current value as far as possible, the n channel TFT that constitutes cmos circuit just should have a Lov district.
In practice; after the state of finishing Figure 11 B, preferably can have good hermetic properties and gastight diaphragm (for example being stacked film or ultraviolet curable resin film) or transparent sealant and in closed environment, carry out encapsulation (sealing) with one.Can be in the inner reliability that forms inert environments and improve light-emitting component at encapsulant positioned inside drying agent (for example being baryta) of encapsulant.
And then, after having strengthened hermetic properties, connect a connector (flexible print circuit: FPC), terminal lead is connected to the external signal terminal from element or the circuit that is located on the substrate by encapsulation step.So just made finished product.
In addition, can limit the quantity of making the required photomask of display device according to the step shown in the example 5.So just the energy reduction of erection time, reduce manufacturing cost, and improve output.
Example 2 can with example 1 arbitrary combination.
Example 3
A kind of encapsulating method of display device below will be described with reference to Figure 19.Pixel parts is to constitute with the TFT on the dielectric substrate with the driving circuit that is located at the pixel parts periphery.
Figure 12 A is the top view of display device, and Figure 12 B is a sectional view along A-A ' line drawing among Figure 12 A, and Figure 12 C is a sectional view along B-B ' line drawing among Figure 12 A.
Surround with a seal 4009 and to be located at a pixel parts 4002 on the substrate 4001, signal-line driving circuit 4003, the combination of scan line drive circuit 4004 (first and second scan line drive circuit 4004a and 4004b).And then, a seal 4008 is set above the combination of signal-line driving circuit 4003 and scan line drive circuit 4004 in pixel parts 4002.So just can use substrate 4001, seal 4009, seal 4008 and a kind of filler 4210 sealing pixel parts 4002, the combination of signal-line driving circuit 4003 and scan line drive circuit 4004.
In addition, be located at the pixel parts 4002 on the substrate 4001, signal-line driving circuit 4003, the first and second scan line drive circuit 4004a and 4004b comprise a plurality of TFT.Figure 12 B represents to be formed on an included driving circuit TFT4201 (being n channel-type TFT and p channel-type TFT) in included signal-line driving circuit 4003 of a pixel parts 4002 on the lower film 4010 and the drive TFT 4202 as shown in this example.
In this example, driving circuit TFT4201 adopts and presses p channel-type TFT and the n channel-type TFT that known method is made, and drive TFT 4202 adopts the p channel-type TFT that presses the known method manufacturing.Be provided with a memory capacitance (not expression in the drawings) that is connected to the grid of drive TFT 4202 in pixel parts 4002 in addition.
Form insulation film (flat film) 4301 between ground floor at driving circuit TFT4201 with above the drive TFT 4202.Form the pixel capacitors (anode) 4203 that is connected to drive TFT 4202 drain electrodes with circuit then in the above.Pixel capacitors 4203 adopts the transparent conductive film with high workload performance.Transparent conductive film can adopt the compound of indium oxide and tin oxide, the compound of indium oxide and zinc paste, zinc paste, tin oxide or indium oxide.Also can adopt the transparent conductive film that adds gallium.
On pixel capacitors 4203, form an insulation film 4302.Form an opening in the insulation film 4302 on pixel capacitors 4203.At this opening, on pixel capacitors 4203, form an organic compound layer 4204.Organic compound layer 4204 can adopt known organic material or inorganic material.Although can adopt the organic material that comprises low molecular system (monomer system) and polymer system (polymer system).
The formation method of organic compound layer can adopt known evaporation process or filming technology.The structure of organic compound layer can be a hole injection layer, hole moving layer, a kind of stepped construction that luminescent layer and electron transfer layer or electron injecting layer independent assortment form, or a kind of single layer structure.
The negative electrode made from the conductive film with light-proofness matter (normally contain aluminium, copper or silver are as a kind of laminate film of a kind of conductive film of its principal ingredient or they and other conductive film) 4205 is formed on above the organic compound layer 4204.Moisture and the oxygen that should get rid of the existence on the interface between negative electrode 4205 and the organic compound layer 4204 as far as possible.Therefore just need try every possible means to form organic compound layer 4204 in nitrogen or rare gas environment, organic compound layer can not be exposed to oxygen or moisture.Adopted a kind of accommodation system more than (combination tool system) film forming device to form above-mentioned film in the present embodiment.Anticathode 4205 applies predetermined voltage.
Method forms one by pixel capacitors (anode) 4203 as described above, the light-emitting component 4303 that organic compound layer 4204 and negative electrode 4205 constitute.On insulation film 4302, form protective film 4209 covering luminous elements 4303 then.Protective film 4209 can prevent effectively that block and moisture or the like infiltrate light-emitting component 4303.
Yet, pointing under the situation of covering one side at the direction of illumination of the light that light-emitting component 4303 sends, covering must be transparent.To adopt such as glass plate plastic plate, mylar or acrylate film in this case.
In addition, be exposed to the material that water-absorbing material (for example being baryta) maybe can absorb oxygen in order to make filler, a side of substrate 4001 is provided with a groove position 4007 and is used for settling water-absorbing material maybe can absorb the material 4207 of oxygen on seal 4008.Then, be used for a groove covering 4208 material 4207 that water-absorbing material maybe can absorb oxygen is remained on groove position 4007 in order to prevent that material 4207 that water-absorbing material maybe can absorb oxygen from loosing to leak.Groove covering 4208 is meticulous sieves, and the structure that is had can see through air or moisture and can not see through the material 4207 that water-absorbing material maybe can absorb oxygen.The material 4207 that provides water-absorbing material maybe can absorb oxygen betwixt can suppress the deterioration of light-emitting component 4303.
Shown in Figure 12 C, when forming pixel capacitors 4203, form one and can touch the conductive film 4203a that draws line 4005a.
In addition, present embodiment can use with example 1 and 2 arbitrary combination.
Example 4
In example 4, to explain display device of the present invention with the sectional view of Figure 17.In addition, constitute in this example and only represented light-emitting component in the middle of the element of pixel of display device and be connected to a transistor on the pixel capacitors of light-emitting component.
In Figure 17, transistor (driving transistors) 1601 is formed on the pixel substrate 1600.
Driving transistors 1601 has gate electrode 1603, insulation film 1605 and a channel formation region 1604b.One of the drain electrode of driving transistors 1601 and source area are 1604a, and another district is 1604c.The 1604a of channel formation region 1604b and respectively corresponding source area and drain region, 1604c forms with a thin film semiconductive layer.On driving transistors 1601, form an interlayer film 1606.
In addition, driving transistors 1601 is not limited only to illustrated structure, can arbitrarily adopt any TFT with known configurations.The TFT that for example uses single gate herein is as driving transistors 1601, but also can be with the TFT of a plurality of grids.The TFT that uses top grid herein also can use the TFT of bottom grid as driving transistors 1601.Also can adopt the bigrid TFT that is furnished with two gate electrodes by a grid insulating film at the upper and lower position of channel region in addition.
Then have reflexive patterning of materials and form a pixel capacitors 1608 a kind of by required design.Herein with pixel capacitors 1608 as anode.On interlayer film 1606, form the source electrode and the drain region 1604a that can reach driving transistors 1601, the conduction hole of 1604c.Formation is made of Ti, comprises the stepped construction of the Al of Ti and Ti and by required designing picture composition, thereby forms line 1607 and line 1609.Line 1609 and pixel capacitors 1608 are interconnected and conduct electricity.
Then form an insulation film made from organic resins such as photosensitive polypropylene, and opening of position formation of the pixel capacitors 1608 of light-emitting component 1614 in correspondence, so just formed insulation film 1610.
Be connected to the top of pixel capacitors 1608 with the bottom of insulation film opening this moment, and the curved surface that the bottom had of insulation film opening is determined by the center and the first curvature radius (R1) of pixel capacitors and bottom-up tangent curvature of a curve (O1).And then the curved surface that the top had of insulation film opening is determined by the center and the second curvature radius (R2) of pixel capacitors and tangent curvature of a curve (O2) top down.No matter be the etch process that adopts the etch process of sour group water solution or adopt reacting gas, controllable radius-of-curvature can both make radius-of-curvature (R1) reach 0.2 ∫ m to 0.3 ∫ m.
The bottom of insulation film opening has mild curved surface and changes, so that improve the distribution of the luminescent layer that forms on opening, and can prevent that luminescent layer from disconnecting from the bottom.So just can reduce pixel capacitors and negative electrode and disconnect short circuit because of luminescent layer.Can also prevent the local attenuation of luminescent layer, and prevent electric field concentration of local in luminescent layer.
After forming organic compound layer 1611, form the counter electrode (negative electrode) 1612 of light-emitting component 1614 with the thickness lamination that silver (Ag) film below 10nm constitutes at (Cs) film of the caesium below the 2nm and thickness.The film thickness of the counter electrode 1612 of light-emitting component 1614 is reduced to minimum, and the luminous energy that sends from luminescent layer 1611 sees through counter electrode 1612, and the direction that light directive and pixel substrate 1600 is opposite.Then form the protective film 1613 of a protection light-emitting component 1614.
As mentioned above, under the radiative situation of opposite direction of the pixel substrate 1600 in display device, for light-emitting component 1614, do not need by be included in driving transistors 1601 that pixel substrate 1,600 one sides form or the like at interior element from visually checking light-emitting component 1614, the ratio of the area of so just extending and open.
In addition, with the material of TiN, use pixel capacitors as negative electrode, and counter electrode 1612 is as the anode that forms with ITO or the like transparent conductive film as pixel capacitors 1608.So can actually obtain a kind of like this structure, make luminescent layer 1611 luminous on towards the opposite direction of pixel capacitors 1600 from anode.
The sectional view of Figure 17 B represents to have the structure of a pixel of light-emitting component, and it is different with the structure shown in Figure 17 A.In Figure 17 B, with parts identical among Figure 17 A with and Figure 17 A in identical symbol represent that and can continue to use the structure shown in Figure 17 and make these identical parts, it is different with the step in middle layer 1606 to form driving transistors 1601 only.
On intermediate layer film 1606, form source electrode and the drain region 1604a that reaches driving transistors 1601, the conduction hole of 1604c.Form then by Ti and constitute, comprise the stepped construction of Al and the Ti of Ti, and form conductive film with ITO., comprise Al and the stepped construction of Ti and the conductive film composition that forms with ITO of Ti, thereby form what constitute by required design by 1617 and 1618 lines that constitute 1621 and 1619 and pixel capacitors 1620 by Ti.Pixel capacitors 1620 is identical with the anode of light-emitting component 1624.
Then form the insulation film that an organic resin material such as the photosensitive polypropylene of usefulness is made, and opening of position formation of the pixel capacitors 1620 of light-emitting component 1624 in correspondence, so just formed insulation film 1610.Problem for fear of the difference in height because of the opening sidewall causes organic compound layer to disperse just can form opening with a cutting step, makes it that enough mild tapered sidewalls be arranged.
After forming organic compound thin film 1611, form the counter electrode (negative electrode) 1612 of light-emitting component 1624 with the thickness lamination that silver (Ag) film below 10nm constitutes at (Cs) film of the caesium below the 2nm and thickness.The film thickness of the counter electrode 1612 of light-emitting component 1624 is reduced to minimum, and the luminous energy that sends from luminescent layer 1611 sees through counter electrode 1612, and the direction that light directive and pixel substrate 1600 is opposite.Then form the protective film 1613 of a protection light-emitting component 1624.
As mentioned above, under the radiative situation of opposite direction of the pixel substrate 1600 in display device, for light-emitting component 1624, do not need by be included in driving transistors 1601 that pixel substrate 1,600 one sides form at interior element from visually checking light-emitting component 1624, the ratio of the area of so just extending and open.
In the structure of Figure 17 B, compare with the structure of Figure 17 A, can form with common photomask and be connected to the source electrode of driving transistors or line 1619 and the pixel capacitors 1620 and the composition of drain region, so just can reduce photomask required in the manufacturing step, and can simplify technology.
Present embodiment can use with example 1 to 3 arbitrary combination.
Example 5
In example 5, to explain pixel structure with the different display device of the present invention of structure shown in Figure 17 with the sectional view of Figure 18.For with Figure 17 in identical parts adopted identical label.
In this example, constitute and only to have represented light-emitting component in the middle of the element of pixel of display device and to be connected to a transistor on the pixel capacitors of light-emitting component.
In Figure 18, transistor (driving transistors) 1601 is formed on the pixel substrate 1600.
Driving transistors 1601 comprises gate electrode 1603, insulation film 1605 and a channel formation region 1604b.One of the drain electrode of driving transistors 1601 and source area are 1604a, and another district is 1604c.The 1604a of channel formation region 1604b and respectively corresponding source area and drain region, 1604c forms with a thin film semiconductive layer.On driving transistors 1601, form an interlayer film 1606.
In addition, driving transistors 1601 is not limited only to structure shown in Figure 180, can arbitrarily adopt any TFT with known configurations.The TFT that for example uses single gate herein is as driving transistors 1601, but also can be with the TFT of a plurality of grids.At Figure 18 with the TFT of top grid as driving transistors 1601, also can be with the TFT of bottom grid.Also can adopt the bigrid TFT that is furnished with two gate electrodes by a grid insulating film at the upper and lower position of channel region in addition.
Form the source electrode and the drain region 1604a that can reach driving transistors 1601 on interlayer film 1606, the conduction hole of 1604c forms a connecting line layer and presses required designing picture composition, thereby forms line 1667a and line 1667b.And then on line 1667a and line 1667b, form second middle layer 1666.
Formation is by Ti, comprises the stepped construction of the Al of Ti and Ti and by required designing picture composition, thereby forms line 1607 and line 1609.Line 1609 and pixel capacitors 1608 are interconnected and conduct electricity.
Then have reflexive patterning of materials and form a pixel capacitors 1608 a kind of by required design.Herein with pixel capacitors 1608 as anode.On second interlayer film 1666, form a conduction hole that can reach line 1667b.Formation is by Ti, comprises the stepped construction of the Al of Ti and Ti and by required designing picture composition, thereby forms line 1669.Line 1669 and pixel capacitors 1608 are interconnected and conduct electricity.
Then form an insulation film made from organic resins such as photosensitive polypropylene, and opening of position formation of the pixel capacitors 1608 of light-emitting component 1614 in correspondence, so just formed insulation film 1610.Problem for fear of the difference in height because of the opening sidewall causes organic compound layer to disperse just can form opening with a cutting step shown in Figure 17 A, makes it that enough mild tapered sidewalls be arranged.
After forming organic compound thin film 1611, form the counter electrode (negative electrode) 1612 of light-emitting component 1614 with the thickness lamination that silver (Ag) film below 10nm constitutes at (Cs) film of the caesium below the 2nm and thickness.The film thickness of the counter electrode 1612 of light-emitting component 1614 is reduced to minimum, and the luminous energy that sends from luminescent layer 1611 sees through counter electrode 1612, and the direction that light directive and pixel substrate 1600 is opposite.Then form the protective film 1613 of a protection light-emitting component 1614.
As mentioned above, under the radiative situation of opposite direction of the pixel substrate 1600 in display device, for light-emitting component 1614, do not need by be included in driving transistors 1601 that pixel substrate 1,600 one sides form at interior element from visually checking light-emitting component 1614, the ratio of the area of so just extending and open.
In addition, with the material of T iN, use pixel capacitors as negative electrode, and counter electrode 1612 is as the anode that forms with ITO or the like transparent conductive film as pixel capacitors 1608.So can actually obtain a kind of like this structure, make luminescent layer 1611 luminous on towards the opposite direction of pixel capacitors 1608 from anode.
In this example, compare, increased a connecting line layer, and in Figure 18, form line 1667a with structure shown in Figure 17.Like this, compare with structure shown in Figure 17, Figure 18 might form pixel capacitors on line 1667a.So just can the extend and open ratio of area.
In addition, present embodiment can use with example 1 to 3 arbitrary combination.
Example 6
To of the present invention one routine chromatic display be described with reference to Figure 19 in this example.Figure 19 has represented the sectional view of a pixel of display device.
Only represented representational 3 pixels in the OLED display device in this example, and the element that constitutes each pixel has only represented to be connected to the pixel capacitors of the transistor and the light-emitting component of light-emitting component.
In Figure 19, on pixel substrate 1900, form transistor (driving transistors) 1901_R, 1901_G and 1901_B.At driving transistors 1901_R, 1901_G and 1901_B go up and form first interlayer film 1910.
Should be noted that, driving transistors 1901_R, 1901_G and 1901_B are not limited only to structure shown in Figure 19, can arbitrarily adopt the TFT of known configurations.For example in Figure 19, driving transistors 1901_R, 1901_G and 1901_B make with single grid type TFT, but also can use multiple-grid polar form TFT.In addition, in Figure 19, driving transistors 1901_R, 1901_G and 1901_B make with top grid type TFT, but also can use bottom gate type TFT.Also can adopt the double gated TFT that is furnished with two gate electrodes by a grid insulating film at the upper and lower position of channel region separately in addition.
Form a contact hole in first interlayer film 1910, it reaches driving transistors 1901_R, and the source area of 1901_G and 1901_B or drain region form connecting line layer, carries out composition by design shape and forms line 1919_R, 1919_G and 1919_B.At line 1919_R, 1919_G and 1919_B go up and form second interlayer film 1911 then.
Then on second interlayer film 1911, form and to reach line 1919_R, the contact hole of 1919_G and 1919_B, and formation pixel capacitors 1912_R, 1912_G and 1912_B.Pixel capacitors 1912_R herein, 1912_G and 1912_B are anodes.
Should be noted that in this structure and can adopt the structure that does not have second interlayer film 1911.Specifically such structure at line 1919_R, forms pixel capacitors 1912_R, 1912_G and 1912_B on same one deck of 1919_G and 1919_B.
Then form emitting red light organic compound layer 1914_R.Then form green emitting organic compound layer 1914_G.Then form blue-light-emitting organic compound layer 1914_B.Form the comparative electrode 1915 of light-emitting component 1614 then.
So just formed the red light-emitting component that constitutes by pixel capacitors 1912_R, emitting red light organic compound layer 1914_R and comparative electrode 1915.Also formed the green luminousing element that constitutes by pixel capacitors 1912_G, green emitting organic compound layer 1914_G and comparative electrode 1915.Formed the blue light emitting device that constitutes by pixel capacitors 1912_B in addition, blue-light-emitting organic compound layer 1914_B and comparative electrode 1915.
According to this example, form organic compound layer 1914_R in (coating separately), just finished a kind of structure when 1914_G and 1914_B, make each organic compound layer 1914_R, 1914_G and 1914_B are overlapping on the border.
With the surplus that said structure dwindles independent coating organic compound layer, can increase the area of light-emitting zone in the pixel.
Present embodiment can use to example 5 arbitrary combination with example 1.
Example 7
The embodiment of electronic installation of the present invention will be described with reference to Figure 13 in this example.
Below provided the example of this device of the present invention: portable data assistance; Personal computer; Image replaying equipment; Televisor; The headband display; Video camera or the like.
Figure 13 A represents the synoptic diagram of portable data assistance of the present invention, and it comprises main body 4601a, operating switch 4601b, power switch 4601c, antenna 4601d, display part 4601e and external input port 4601f.Display part 4601e adopts the display device described in embodiment and the example 1 to 6.
Figure 13 B represents the synoptic diagram of personal computer of the present invention, and it comprises main body 4602a, shell 4602b, display part 4602c, operating switch 4602d, power switch 4602e and external input port 4602f.Display part 4602c adopts the display device described in embodiment and the example 1 to 6.
Figure 13 C represents the synoptic diagram of image playback apparatus of the present invention, and it comprises main body 4603a, shell 4603b, recording medium 4603c, display part 4603d, voice output part 4603e and operating switch 4603f.Display part 4603c adopts the display device described in embodiment and the example 1 to 6.
Figure 13 D represents the synoptic diagram of televisor of the present invention, and it comprises main body 4604a, shell 4604b, display part 4604c and operating switch 4604d.Display part 4604c adopts the display device described in embodiment and the example 1 to 6.
Figure 13 E represents the synoptic diagram of headband display of the present invention, and it comprises main body 4605a, monitor part 4605b, head band 4605c, display part 4605d and optical system.Display part 4605d adopts the display device described in embodiment and the example 1 to 6.
Figure 13 F represents the synoptic diagram of video camera of the present invention, and it comprises main body 4606a, shell 4606b, coupling part 4606c, image receiving unit 4606d, eyepiece 4606e, battery 4606f, sound importation 4606g and display part 4606h.Display part 4606h adopts the display device described in embodiment and the example 1 to 6.The present invention also is not limited only to above-mentioned device.The present invention can also be used to adopt the various devices of the display device described in embodiment and the example 1 to 6.
Example 8
In this example will be with reference to the practical structures of Figure 20 explanation at the signal-line driving circuit of the present invention shown in the embodiment 1 (Control current output circuit).
Figure 20 is the top view of the part of signal-line driving circuit, has represented a plurality of current sources (the accurate Control current output circuit among corresponding Fig. 1) among the figure and has been connected to the on-off circuit (correspondence 1101 among Fig. 1) of current source.Should be noted that, although be 4 transistors (1112 among corresponding Fig. 1) are weaved into one group in Figure 20, in order to carry out panchromatic demonstration, 12 transistors that need to be used for the RGB each several part are weaved into one group (yet, because being limited in of figure only represented 7 transistors among Figure 20).
Then a plurality of analog switches shown in Fig. 2 are connected to on-off circuit with line.By the electrical connection that is connected to come switch current line and signal wire (not having expression among Figure 20) of analog switch and line just of this on-off circuit.
In Figure 21 A, represented to have the analog switch of n channel-type thin film transistor (TFT) and p channel-type thin film transistor (TFT) in addition.Should be noted that for the thin film transistor (TFT) of current source, in order to reduce dispersion, channel length of the channel formation region of TFT (L) and channel width (W) have been increased (particularly channel length has reached 100 μ m).
Can use-case 2 described manufacture methods form above-mentioned p channel-type thin film transistor (TFT) and n channel-type thin film transistor (TFT).
Control current output circuit provided by the invention can be realized with the multi-crystal TFT with said structure, and can suppress the dispersion of the Control current of output.
In addition, in the display device that adopts above-mentioned Control current output circuit, can be from visually reducing the dispersion of the luminosity of light-emitting component the pixel.So just can provide a kind of miniaturization, the display device of low-power consumption and the electronic installation that adopts this display device.
Claims (25)
1. portable data assistance comprises:
Antenna:
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate,
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
2. according to the portable data assistance of claim 1, each current output circuit in the wherein said m current output circuit includes transistor.
3. according to the portable data assistance of claim 1, wherein said transistor comprises polycrystalline semiconductor thin film.
4. according to the portable data assistance of claim 1, also comprise operating switch.
5. personal computer comprises:
Operating switch:
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
6. according to the personal computer of claim 5, each current output circuit in the wherein said m current output circuit includes transistor.
7. according to the personal computer of claim 6, wherein said transistor comprises polycrystalline semiconductor thin film.
8. picture reproducer comprises:
Recording medium;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
9. picture reproducer according to Claim 8, each current output circuit in the wherein said m current output circuit includes transistor.
10. according to the picture reproducer of claim 9, wherein said transistor comprises polycrystalline semiconductor thin film.
11. picture reproducer according to Claim 8 also comprises the voice output part.
12. picture reproducer also comprises operating switch according to Claim 8.
13. a televisor comprises:
Operating switch;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
14. according to the televisor of claim 13, each current output circuit in the wherein said m current output circuit includes transistor.
15. according to the televisor of claim 14, wherein said transistor comprises polycrystalline semiconductor thin film.
16. a head mounted display comprises:
Optical system;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
17. according to the head mounted display of claim 16, each current output circuit in the wherein said m current output circuit includes transistor.
18. according to the head mounted display of claim 17, wherein said transistor comprises polycrystalline semiconductor thin film.
19. a camera comprises:
The image receiving unit;
Be located at the individual current output circuit of m (m represents natural number) on the dielectric substrate, and
The individual switchgear of n (n represents to be equal to or less than the natural number of m), be used for from described m current output circuit select a current output circuit and
The electric current line,
Each switchgear in the wherein said n switchgear all periodically selects a current output circuit in the described m current output circuit to be connected to this electric current line.
20. according to the camera of claim 19, each current output circuit in the wherein said m current output circuit includes transistor.
21. according to the camera of claim 20, wherein said transistor comprises polycrystalline semiconductor thin film.
22. according to the camera of claim 19, wherein said camera is a video camera.
23., also comprise eyepiece according to the camera of claim 19.
24., also comprise battery according to the camera of claim 19.
25., also comprise the sound importation according to the camera of claim 19.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP316116/2001 | 2001-10-12 | ||
| JP2001316116 | 2001-10-12 | ||
| JP316116/01 | 2001-10-12 |
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| CN1482591A CN1482591A (en) | 2004-03-17 |
| CN100423065C true CN100423065C (en) | 2008-10-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB021435928A Expired - Fee Related CN100423065C (en) | 2001-10-12 | 2002-10-11 | Drive circuit, display device using the drive circuit and electronic apparatus using the display device |
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| Country | Link |
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| US (2) | US6777885B2 (en) |
| CN (1) | CN100423065C (en) |
| TW (1) | TW564392B (en) |
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- 2002-10-11 CN CNB021435928A patent/CN100423065C/en not_active Expired - Fee Related
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2004
- 2004-07-08 US US10/885,881 patent/US7372437B2/en not_active Expired - Fee Related
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| CN1213813A (en) * | 1997-10-01 | 1999-04-14 | 株式会社半导体能源研究所 | Semiconductor display device and driving method thereof |
| JP2001109428A (en) * | 1999-10-05 | 2001-04-20 | Nec Corp | Device and method for driving organic thin film el display device |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW564392B (en) | 2003-12-01 |
| US20040257356A1 (en) | 2004-12-23 |
| US6777885B2 (en) | 2004-08-17 |
| US20030071576A1 (en) | 2003-04-17 |
| US7372437B2 (en) | 2008-05-13 |
| CN1482591A (en) | 2004-03-17 |
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