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CN100421347C - Semi-bridge type converter circuit for driving double N-MOS by using push-pull control chip - Google Patents

Semi-bridge type converter circuit for driving double N-MOS by using push-pull control chip Download PDF

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CN100421347C
CN100421347C CNB200410071037XA CN200410071037A CN100421347C CN 100421347 C CN100421347 C CN 100421347C CN B200410071037X A CNB200410071037X A CN B200410071037XA CN 200410071037 A CN200410071037 A CN 200410071037A CN 100421347 C CN100421347 C CN 100421347C
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control chip
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CN1728525A (en
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陈振刚
王政雄
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Lien Chang Electronic Enterprise Co Ltd
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Abstract

The invention relates to a half-bridge type converter circuit for driving double N-MOS by using a push-pull control chip, which can be connected with a driving circuit in a common half-bridge type converter circuit, namely, the push-pull control chip can be used for controlling the half-bridge type converter circuit, and comprises the following components: a push-pull control chip with two output ends; the driving circuit is provided with two input ends and two output ends, and the two input ends are connected with the two output ends of the push-pull control chip and are controlled by the push-pull control chip; and a half-bridge switch component, which is composed of a first N-channel field effect transistor and a second N-channel field effect transistor, wherein each N-channel field effect transistor is provided with a control end, the control ends are connected with the two output ends of the driving circuit, and are used for switching the direct current power supply into the alternating current power supply and transmitting the alternating current power supply to the primary side end of the transformer through the driving of the driving circuit.

Description

利用推挽式控制芯片驱动双N-MOS的半桥式换流电路 Utilizing push-pull control chip to drive double N-MOS half-bridge converter circuit

技术领域 technical field

本发明涉及一种利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,尤指一种可以使用推挽式控制二个N通道场效应晶体管组成的半桥式开关组件,从而驱动负载的换流电路。The invention relates to a half-bridge commutation circuit driven by a push-pull control chip, in particular to a half-bridge switch component composed of two N-channel field-effect transistors that can be controlled by a push-pull type, thereby A converter circuit that drives a load.

背景技术 Background technique

TFT面板背光源的电力供应(Power Supply)主要使用换流电路(InverterCircuit)来达成能量的转换及驱动冷阴极荧光灯管(CCFL)的发光,常见的换流电路(Inverter Circuit)因电路拓扑的不同,一般分有半桥式换流电路、全桥式换流电路及推挽式换流电路等,为将直流电转换成交流电的换流电路。The power supply (Power Supply) of the TFT panel backlight mainly uses the inverter circuit (Inverter Circuit) to achieve energy conversion and drive the light emission of the cold cathode fluorescent lamp (CCFL). The common inverter circuit (Inverter Circuit) is different due to the circuit topology. Generally, there are half-bridge commutation circuits, full-bridge commutation circuits and push-pull commutation circuits, etc., which are commutation circuits that convert direct current into alternating current.

请参考图1,为常见推挽式换流电路驱动负载的电路示意图,双压器T1将电路区分成为一次侧的前级电路101与二次侧的后级电路102,该一次侧101包括有:一直流电源Vcc、一第一开关Q1、一第二开关Q2等,该二次侧102包括有:至少一电容器(C1、C2、C3)、一负载(Load)、至少一二极管(D1、D2)等。再者,一次侧101与二次侧102间连接有一推挽式控制芯片103。配合图2,为常见推挽式控制芯片输出信号及负载端输出波形示意图。推挽式控制芯片103输出一第一控制信号a与一第二控制信号b,其中第一控制信号a与第二控制信号b分别控制一次侧101的第一开关Q1与第二开关Q2的切换工作,同时依据直流电源Vcc的电压,用以提供能量并通过变压器T1将直流电源Vcc的电压升压转换到二次侧102,用以驱动负载(Load),变压器T1的二次侧输出电压波形c显示C点的电压波形,如图2所示,二次侧输出电压波形c为交流电压波形。Please refer to FIG. 1 , which is a schematic diagram of a common push-pull commutation circuit driving a load. The double voltage transformer T1 divides the circuit into a primary-side pre-stage circuit 101 and a secondary-side post-stage circuit 102. The primary side 101 includes : a DC power supply Vcc, a first switch Q1, a second switch Q2, etc., the secondary side 102 includes: at least one capacitor (C1, C2, C3), a load (Load), at least one diode (D1, D2) etc. Furthermore, a push-pull control chip 103 is connected between the primary side 101 and the secondary side 102 . In conjunction with Figure 2, it is a schematic diagram of the output signal of a common push-pull control chip and the output waveform of the load terminal. The push-pull control chip 103 outputs a first control signal a and a second control signal b, wherein the first control signal a and the second control signal b respectively control the switching of the first switch Q1 and the second switch Q2 of the primary side 101 Work, and at the same time, according to the voltage of the DC power supply Vcc, it is used to provide energy and convert the voltage of the DC power supply Vcc to the secondary side 102 through the transformer T1 to drive the load (Load). The output voltage waveform of the secondary side of the transformer T1 c shows the voltage waveform at point C, as shown in Figure 2, the secondary side output voltage waveform c is the AC voltage waveform.

上述说明中该推挽式控制芯片103为LINFINITY(MICEOSEMI)公司生产的芯片,其型号为LX1686与LX1691等系列,或为Micro international Limited公司生产的芯片,其型号为02-9RR等系列,和Beyond Innovation technology公司生产的芯片,其型号为BIT3494及BIT3193等系列。In the above description, the push-pull control chip 103 is a chip produced by LINFINITY (MICEOSEMI), whose models are LX1686 and LX1691 series, or a chip produced by Micro international Limited company, whose model is 02-9RR series, and Beyond The chips produced by Innovation Technology Company are BIT3494 and BIT3193 series.

请参考图3,为常见半桥式换流电路驱动负载式电路示意图。变压器T2将电路区分成为一次侧的前极电路201与二次侧的后级电路202,一次侧201包括有:一直流电源Vcc、二个电子开关(Q1、Q2)、一半桥式控制芯片TL494、二电容器(C1、C2)及一隔离变压器Tr等,二次侧202包括有:一负载(Load)。配合图4,为常见半桥式控制芯片输出控制信号及交流电源电压波形示意图。半桥式控制芯片TK494由二个输出端D1、D2输出控制信号D1-D2通过隔离变压器Tr用以分别控制Q1、Q2二个电子开关的切换工作。该二个电子开关Q1、Q2的切换工作,将储存于电容器C1、C2的电能通过一交连电容C3分别传送至变压器T2的一次侧端点T21,用以形成一交流电源ac。电容器C1、C2的电压为直流电源Vcc的一半电压Vcc/2。该交流电源ac用以提供能量给变压器T2,并通过变压器T2将交流电源升压转换到二次侧202,用以驱动负载(Load)。Please refer to FIG. 3 , which is a schematic diagram of a common half-bridge converter circuit driving a load circuit. The transformer T2 divides the circuit into a front-stage circuit 201 on the primary side and a rear-stage circuit 202 on the secondary side. The primary side 201 includes: a DC power supply Vcc, two electronic switches (Q1, Q2), and a half-bridge control chip TL494 , two capacitors ( C1 , C2 ) and an isolation transformer Tr, etc., the secondary side 202 includes: a load (Load). In conjunction with Figure 4, it is a schematic diagram of the output control signal and AC power voltage waveform of a common half-bridge control chip. The half-bridge control chip TK494 outputs control signals D1-D2 from two output terminals D1 and D2 to control the switching work of the two electronic switches Q1 and Q2 respectively through the isolation transformer Tr. The switching operation of the two electronic switches Q1 and Q2 transmits the electric energy stored in the capacitors C1 and C2 to the primary terminal T21 of the transformer T2 respectively through a connecting capacitor C3 to form an AC power source ac. The voltage of the capacitors C1 and C2 is half the voltage Vcc/2 of the DC power supply Vcc. The AC power ac is used to provide energy to the transformer T2, and through the transformer T2, the AC power is boosted and converted to the secondary side 202 for driving a load (Load).

上述说明中,若使用的换流电路(Inverter Circuit)为半桥式换流电路时则需要搭配半桥式控制芯片的控制才能工作,若为推挽式换流电路则需要搭配推挽式控制芯片的控制才能工作。因此,在实用上缺乏弹性与共用性。再者,换流电路(Inverter Circuit)在使用上还常受限于控制芯片,而导致换流电路(Inverter Circuit)因受制于以上叙述,而使控制芯片无法共用并统一购料,或需要搭配更多复杂的电路。In the above description, if the inverter circuit used is a half-bridge inverter circuit, it needs to be controlled by a half-bridge control chip to work, and if it is a push-pull inverter circuit, it needs to be matched with a push-pull control The chip controls are required to work. Therefore, it lacks flexibility and commonality in practice. Furthermore, the use of the inverter circuit (Inverter Circuit) is often limited to the control chip, and the inverter circuit (Inverter Circuit) is subject to the above description, so that the control chip cannot be shared and purchased in a unified manner, or it needs to be matched more complex circuits.

发明内容 Contents of the invention

有鉴于此,本发明提供一种利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,其利用一驱动电路,分别连接于推挽式控制芯片的输出端与二个N通道场效应晶体管所组成的半桥式开关组件的切换工作。In view of this, the present invention provides a half-bridge commutation circuit using a push-pull control chip to drive double N-MOS, which utilizes a drive circuit, respectively connected to the output end of the push-pull control chip and the two N-channels The switching work of the half-bridge switching component composed of field effect transistors.

本发明利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,其于常见半桥式换流电路的二个N通道场效应晶体管与控制芯片之间连接一驱动电路。并且,控制芯片更替为推挽式控制芯片,进而控制该二个N通道场效应晶体管的切换工作。The invention utilizes a push-pull control chip to drive a double N-MOS half-bridge commutation circuit, and a driving circuit is connected between two N-channel field effect transistors and the control chip of a common half-bridge commutation circuit. Moreover, the control chip is replaced by a push-pull type control chip, and then controls the switching operation of the two N-channel field effect transistors.

本发明提供一种利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,连接于一个变压器的一次侧端,用以将一个直流电源转换为一个交流电源,包括有,一个推挽式控制芯片,设有二个输出端;一个驱动电路,设有二个输入端及二个输出端,该二个输入端分别连接于该推挽式控制芯片的二个输出端,接受该推挽式控制芯片的控制,该驱动电路包括有:一高频变压器,其具有第一输入端、第二输入端、第一输出端及第二输出端,同时该第一输入端通过一RC串联电路连接到推挽式控制芯片的一输出端,并该第二输入端连接到该参考端,该第一输出端通过一第一电阻连接到该第一N通道场效应晶体管的控制端,该第二输出端连接到该变压器的一次侧端,及一第二电阻器,连接于推挽式控制芯片的另一输出端与该第二N通道场效应晶体管的控制端;以及使用一二极管并接于该第二电阻器;及一个半桥式开关组件,由一个第一N通道场效应晶体管与一个第二N通道场效应晶体管组成每一个N通道场效应晶体管皆设有一个控制端,并且分别连接于该驱动电路的二个输出端,通过该驱动电路的驱动,用以将该直流电源切换为该交流电源,并传送至该变压器的一次侧端。The present invention provides a half-bridge commutation circuit driven by a push-pull control chip to drive double N-MOS, which is connected to the primary side of a transformer to convert a DC power supply into an AC power supply, including a push-pull The pull-type control chip is provided with two output terminals; a driving circuit is provided with two input terminals and two output terminals, and the two input terminals are connected to the two output terminals of the push-pull control chip respectively, and receive the The control of the push-pull control chip, the drive circuit includes: a high-frequency transformer, which has a first input terminal, a second input terminal, a first output terminal and a second output terminal, and the first input terminal is passed through an RC The series circuit is connected to an output terminal of the push-pull control chip, and the second input terminal is connected to the reference terminal, and the first output terminal is connected to the control terminal of the first N-channel field effect transistor through a first resistor, The second output end is connected to the primary side end of the transformer, and a second resistor is connected to the other output end of the push-pull control chip and the control end of the second N-channel field effect transistor; and a diode is used connected in parallel to the second resistor; and a half-bridge switch component, which is composed of a first N-channel field effect transistor and a second N-channel field effect transistor, and each N-channel field effect transistor is provided with a control terminal, And respectively connected to the two output ends of the drive circuit, driven by the drive circuit, to switch the DC power to the AC power and transmit it to the primary side of the transformer.

如上述说明,本发明一种利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,可以通过该驱动电路,用以接收推挽式控制芯片的控制信号,进而控制半桥式换流电路中二个N通道场效应晶体管所组成的半桥式开关组件的切换工作。As explained above, the present invention uses a push-pull control chip to drive a half-bridge commutation circuit of double N-MOS. The driving circuit can be used to receive the control signal of the push-pull control chip, and then control the half-bridge The switching work of the half-bridge switch component composed of two N-channel field effect transistors in the commutation circuit.

如此,本发明一种利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,可连接一驱动电路于常见半桥式换流电路即可以搭配使用推挽式控制芯片进行控制,在实用上更具有弹性,且不会受限于控制芯片。并且,业者只需使用推挽式控制芯片即可同时控制推挽式换流电路与半桥式换流电路。In this way, the present invention uses a push-pull control chip to drive a dual N-MOS half-bridge commutation circuit. A drive circuit can be connected to a common half-bridge commutation circuit, and the push-pull control chip can be used for control. It is more flexible in practice and will not be limited by the control chip. Moreover, the industry can simultaneously control the push-pull commutation circuit and the half-bridge commutation circuit only by using the push-pull control chip.

为了能更进一步了解本发明特征及技术内容请参阅一下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。In order to further understand the features and technical content of the present invention, please refer to the detailed description and accompanying drawings of the present invention. However, the accompanying drawings are provided for reference and illustration only, and are not intended to limit the present invention.

附图说明 Description of drawings

图1为常见推挽式换流电路驱动负载的电路示意图;Fig. 1 is a schematic circuit diagram of a load driven by a common push-pull commutation circuit;

图2为常见推挽式控制芯片输出控制信号及负载端输出电压波形示意图;Figure 2 is a schematic diagram of the output control signal of a common push-pull control chip and the output voltage waveform at the load end;

图3为常见半桥式换流电路驱动负载的电路示意图;Fig. 3 is a schematic circuit diagram of a load driven by a common half-bridge converter circuit;

图4为常见半桥式控制芯片输出控制信号及交流电源电压波形示意图;Figure 4 is a schematic diagram of the output control signal and AC power voltage waveform of a common half-bridge control chip;

图5为本发明的电路示意图;Fig. 5 is a schematic circuit diagram of the present invention;

图6为本发明另一电路示意图;Fig. 6 is another schematic circuit diagram of the present invention;

图7为本发明再一电路示意图;Fig. 7 is another schematic circuit diagram of the present invention;

图8为本发明更一电路示意图;Fig. 8 is a schematic diagram of another circuit of the present invention;

图9为本发明推挽式控制芯片的输出信号及交流电源电压波形示意图。FIG. 9 is a schematic diagram of the output signal and AC power voltage waveform of the push-pull control chip of the present invention.

其中,附图标记说明:Wherein, the reference numerals explain:

101前级电路    102后级电路    103推挽式控制芯片101 Pre-stage circuit 102 Post-stage circuit 103 Push-pull control chip

T1变压器T1 Transformer

a第一控制信号  b第二控制信号  c变压器T1的二次侧输出电压波形a first control signal b second control signal c secondary side output voltage waveform of transformer T1

201前级电路    202后级电路  T2变压器201 pre-stage circuit 202 post-stage circuit T2 transformer

TL494半桥式控制芯片TL494 half-bridge control chip

D1-D2输出控制信号  Q1控制信号  Q2控制信号D1-D2 output control signal Q1 control signal Q2 control signal

ac交流电源AC power supply

103推挽式控制芯片   302半桥式开关组件  304驱动电路103 push-pull control chip 302 half-bridge switch assembly 304 drive circuit

T2变压器   Gnd参考端T2 transformer Gnd reference terminal

a第一控制信号    b第二控制信号    ac电压波形a first control signal b second control signal ac voltage waveform

具体实施方式 Detailed ways

请参考第5图,为本发明的电路示意图,其中本发明利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,连接于一变压器T2的一次侧端,用以将一直流电源Vcc转换成为一交流电源AC,交流电源AC并通过变压器T2以提供负载工作所需的能量。上述说明中,该交流电源AC的峰峰值为直流电源Vcc。Please refer to Figure 5, which is a schematic circuit diagram of the present invention, wherein the present invention uses a push-pull control chip to drive a double N-MOS half-bridge commutation circuit, which is connected to the primary side of a transformer T2 to convert a DC The power supply Vcc is converted into an alternating current power supply AC, and the alternating current power supply AC passes through the transformer T2 to provide the energy required for the load to work. In the above description, the peak-to-peak value of the alternating current power supply AC is the direct current power supply Vcc.

再参考第5图,本发明利用推挽式控制芯片驱动双N-MOS的半桥换流电路,包括有:一推挽式控制芯片103、一驱动电路304、一半桥式开关组件302及二电容器(C2、C3)。其中,推挽式控制芯片103设有二输出端A及B,可输出控制信号。驱动电路304设有二输入端及二输出端,该二输入端连接于该推挽式控制芯片103的二输出端A及B,接受该推挽式控制芯片的控制。半桥式开关组件302,由二个N通道场效应晶体管Q1、Q2组成,每一N通道场效应晶体管皆设有一控制端G,该些控制端G分别连接于该驱动电路304的二输出端,并通过该驱动电路304的驱动用以将该直流电源Vcc切换为该交流电源AC传送至变压器T2的一次侧端。Referring again to Fig. 5, the present invention utilizes a push-pull control chip to drive a double N-MOS half-bridge commutation circuit, including: a push-pull control chip 103, a drive circuit 304, a half-bridge switch assembly 302 and two Capacitors (C2, C3). Wherein, the push-pull control chip 103 is provided with two output terminals A and B for outputting control signals. The driving circuit 304 has two input terminals and two output terminals, the two input terminals are connected to the two output terminals A and B of the push-pull control chip 103, and are controlled by the push-pull control chip. The half-bridge switch element 302 is composed of two N-channel field effect transistors Q1 and Q2, and each N-channel field effect transistor is provided with a control terminal G, and these control terminals G are respectively connected to the two output terminals of the driving circuit 304 , and is driven by the driving circuit 304 to switch the DC power Vcc into the AC power AC and transmit it to the primary side of the transformer T2.

再参考第5图,其中该二N通道场效应晶体管Q1、Q2的漏极(D)连接到该变压器T2一次侧端,并个别的源极(S)端分别连接到一直流电源端Vcc与一参考端Gnd。变压器T2的另一次侧端通过电容器C3连接到参考端Gnd,并通过电容器C2连接到直流电源Vcc。同时,该二N通道场效应晶体管Q1、Q2的控制端G分别连接到驱动电路304的输出端。上述说明中,该二N通道场效应晶体管Q1、Q2连接成该半桥式开关组件302。并且,其中该二N通道场效应晶体管Q1、Q2组成一正半周驱动或一负半周驱动,该正半周驱动及该负半周驱动于变压器T2的一次侧端T21形成该交流电源AC。Referring to Fig. 5 again, the drains (D) of the two N-channel field effect transistors Q1 and Q2 are connected to the primary side of the transformer T2, and the individual sources (S) are respectively connected to a DC power supply terminal Vcc and A reference terminal Gnd. The other secondary side of the transformer T2 is connected to the reference terminal Gnd through the capacitor C3, and connected to the DC power supply Vcc through the capacitor C2. Meanwhile, the control terminals G of the two N-channel field effect transistors Q1 and Q2 are respectively connected to the output terminals of the driving circuit 304 . In the above description, the two N-channel field effect transistors Q1 and Q2 are connected to form the half-bridge switch component 302 . Moreover, the two N-channel field effect transistors Q1 and Q2 form a positive half-cycle drive or a negative half-cycle drive, and the positive half-cycle drive and the negative half-cycle drive form the AC power supply AC at the primary side terminal T21 of the transformer T2.

再参考第5图,一驱动电路304用来驱动二N通道场效应晶体管Q1、Q2,该驱动电路304通过一RC串联电路3040连接到该推挽式控制芯片103的一输出端A,该RC串联电路3040的另一端则连接到一高频变压器Tr的一第一输入端1,高频变压器Tr的一第二输入端2连接到该参考端Gnd,高频变压器Tr的一第二输入端2连接到该参考端Gnd,高频变压器Tr的一第一输出端3,通过一第一电阻R2连接到该第一N通道场效应晶体管的控制端G,高频变压器Tr的一第二输出端4,连接到该变压器T2的一次侧端T21,上述中,第一输入端1与第一输出端3为同相位。同时,高频变压器Tr的第一输出端3与第二输出端4连接有一阻尼电阻R4,该阻尼电阻R4用来防止因变压器Tr驱动时所产生的振铃现象,而导致N通道场效应晶体管Q1的烧毁。再者,该驱动电路304使用一第二电阻器R3连接于该推挽式控制芯片103的另一输出端B与该第二N通道场效应晶体管的控制端G,及一二极管D,并接于该第二电阻器R3。Referring again to Fig. 5, a drive circuit 304 is used to drive two N-channel field effect transistors Q1, Q2, and the drive circuit 304 is connected to an output terminal A of the push-pull control chip 103 through an RC series circuit 3040, the RC The other end of the series circuit 3040 is connected to a first input terminal 1 of a high-frequency transformer Tr, a second input terminal 2 of the high-frequency transformer Tr is connected to the reference terminal Gnd, and a second input terminal of the high-frequency transformer Tr 2 connected to the reference terminal Gnd, a first output terminal 3 of the high-frequency transformer Tr, connected to the control terminal G of the first N-channel field effect transistor through a first resistor R2, and a second output terminal of the high-frequency transformer Tr The terminal 4 is connected to the primary side terminal T21 of the transformer T2. In the above, the first input terminal 1 and the first output terminal 3 are in the same phase. At the same time, the first output terminal 3 and the second output terminal 4 of the high-frequency transformer Tr are connected with a damping resistor R4, which is used to prevent the ringing phenomenon generated when the transformer Tr is driven, causing the N-channel field effect transistor Q1's burnt. Furthermore, the drive circuit 304 uses a second resistor R3 to connect the other output terminal B of the push-pull control chip 103 with the control terminal G of the second N-channel field effect transistor, and a diode D, and connected in parallel. on the second resistor R3.

请参考图6、图7及图8,该些电路图为本发明的其它实施例电路示意图。该些电路示意图和图5的差异处在于电容器C2、C3置放位置。图6所示电路只使用电容器C3,图7所示电路只使用电容器C2,图6所示电路使用电容器C4。上述说明中,电容器C2、C3用来暂存直流电源端Vcc的电量,并将电量提供到变压器T2。请配合图5,参考图9,为本发明推挽式控制芯片的输出信号及交流电源电压波形示意图。如图9所示,推挽式控制芯片103输出端A输出一第一控制信号a,输出端B输出一第二控制信号b,如Beyond Innovation Technology公司生产的芯片,其型号为BIT3105等系列的POUT1与POUT2的时钟脉冲。于变压器T2一次侧端的T21端点可得到交流电源AC的电压波形ac,其峰峰值为直流电源Vcc。Please refer to FIG. 6 , FIG. 7 and FIG. 8 , these circuit diagrams are schematic circuit diagrams of other embodiments of the present invention. The difference between these schematic circuit diagrams and FIG. 5 lies in the placement positions of the capacitors C2 and C3. The circuit shown in Figure 6 uses only capacitor C3, the circuit shown in Figure 7 uses only capacitor C2, and the circuit shown in Figure 6 uses capacitor C4. In the above description, the capacitors C2 and C3 are used to temporarily store the power of the DC power supply terminal Vcc and provide the power to the transformer T2. Please cooperate with FIG. 5 and refer to FIG. 9 , which is a schematic diagram of the output signal and AC power voltage waveform of the push-pull control chip of the present invention. As shown in Figure 9, the output terminal A of the push-pull control chip 103 outputs a first control signal a, and the output terminal B outputs a second control signal b, such as the chip produced by Beyond Innovation Technology, whose model is BIT3105 and other series Clock pulses for POUT1 and POUT2. The voltage waveform ac of the AC power supply AC can be obtained at the terminal T21 of the primary side of the transformer T2, and its peak-to-peak value is the DC power supply Vcc.

再配合图5,参考图9,于时间t1-t2时,第一控制信号a为高电位,第二控制信号b为低电位。第一控制信号a通过RC串联电路3040传送至高频变压器Tr的第一输入端1,由于高频变压器Tr极性关系,使得此时高频变压器Tr的第一输出端3感应输出一高电位到该第一N通道场效应晶体管Q1的控制端G,并驱动该第一N通道场效应晶体管Q1导通(ON)。第二控制信号b通过该第二电阻器R3传送至该第二N通道场效应晶体管Q2的控制端G,用以控制电晶体开关Q3截止(OFF)。此时,该第一N通道场效应晶体管Q1为导通(ON)状态,该第二N通道场效应晶体管Q2为截止(OFF)状态,使得储存于电容器C2的电能可以传送至变压器T2一次侧端,并于端点T21可得到的电压波形ac为正直流电源+Vcc/2。上述说明中,该二N通道场效应晶体管Q1、Q2为一正半周驱动。Referring to FIG. 5 , referring to FIG. 9 , at time t1-t2, the first control signal a is at a high potential, and the second control signal b is at a low potential. The first control signal a is transmitted to the first input terminal 1 of the high-frequency transformer Tr through the RC series circuit 3040. Due to the polarity relationship of the high-frequency transformer Tr, the first output terminal 3 of the high-frequency transformer Tr senses and outputs a high potential at this time. to the control terminal G of the first N-channel field effect transistor Q1, and drive the first N-channel field effect transistor Q1 to conduct (ON). The second control signal b is transmitted to the control terminal G of the second N-channel field effect transistor Q2 through the second resistor R3 for controlling the transistor switch Q3 to be turned off (OFF). At this time, the first N-channel field effect transistor Q1 is in the ON state, and the second N-channel field effect transistor Q2 is in the OFF state, so that the electric energy stored in the capacitor C2 can be transmitted to the primary side of the transformer T2 terminal, and the voltage waveform ac available at terminal T21 is positive DC power supply +Vcc/2. In the above description, the two N-channel field effect transistors Q1 and Q2 are driven in a positive half cycle.

再配合图5,参考图9,于时间t2-t3时,第一控制信号a由高电位降至低电位,第二控制信号b仍保持低电位。此时,传送到该高频变压器Tr第一输入端1为低电位,由于高频变压器Tr极性关系,使得此时高频变压器Tr的第一输出端3感应输出一低电位到该第一N通道场效应晶体管Q1的控制端G,用以控制该第一N通道场效应晶体管Q1截止(OFF)。由上述说明中可知,于时间t2-t3时,该二N通道场效应晶体管Q1、Q2皆为截止(OFF)状态。此时,变压器T2的一次侧形成开路,使得储存在变压器T2内的能量得以泄除,为泄能状态。因此,此时变压器T2一次侧端的T21端点得到的电压波形ac为零电位。Referring to FIG. 5 , referring to FIG. 9 , at time t2-t3, the first control signal a drops from a high potential to a low potential, and the second control signal b remains low. At this time, the first input terminal 1 transmitted to the high-frequency transformer Tr is a low potential. Due to the polarity relationship of the high-frequency transformer Tr, the first output terminal 3 of the high-frequency transformer Tr senses and outputs a low potential to the first high-frequency transformer Tr. The control terminal G of the N-channel field effect transistor Q1 is used to control the first N-channel field effect transistor Q1 to be turned off (OFF). It can be seen from the above description that at the time t2-t3, the two N-channel field effect transistors Q1 and Q2 are both in the OFF state. At this time, the primary side of the transformer T2 forms an open circuit, so that the energy stored in the transformer T2 can be discharged, and the energy discharge state is reached. Therefore, at this time, the voltage waveform ac obtained at the terminal T21 of the primary side of the transformer T2 is zero potential.

再配合图5,参考图9,本发明利用推挽式控制芯片驱动双N-MOS的半桥式换流电路工作与变压器T2一次侧端的T21端点得到的电压波形ac,其在时间t5-t6时又回复到时间t1-t2时的波形,依序如上述说明,形成提供能量的交流电源AC,并其峰峰值为直流电源Vcc。同时,交流电源AC升压转换到变压器T2的二次侧,用以提供能量给负载(Load)。Cooperate with Fig. 5 again, refer to Fig. 9, the present invention utilizes the push-pull type control chip to drive the double N-MOS half-bridge commutation circuit work and the voltage waveform ac obtained by the T21 end point of the primary side end of the transformer T2, which is at time t5-t6 Time returns to the waveform at time t1-t2. As described above, an alternating current power supply AC is formed to provide energy, and its peak value is a direct current power supply Vcc. At the same time, the AC power source AC is boosted and converted to the secondary side of the transformer T2 to provide energy to the load (Load).

纵上所述,本发明利用推挽式控制芯片驱动双N-MOS的半桥式换流电路,可连接一驱动电路304于常见半桥式换流电路,既可以搭配使用推挽式控制芯片103进行控制,在实用上更具有弹性,且不会受限于控制芯片。并且,业者只需要使用推挽式控制芯片103即可同时控制推挽式换流与半桥式换流电路。As mentioned above, the present invention uses a push-pull control chip to drive a dual N-MOS half-bridge commutation circuit, and can connect a drive circuit 304 to a common half-bridge commutation circuit, and can also be used with a push-pull control chip 103, it is practically more flexible and will not be limited by the control chip. Moreover, the industry only needs to use the push-pull control chip 103 to simultaneously control the push-pull commutation circuit and the half-bridge commutation circuit.

以上所述仅为本发明最佳的具体实施例,本发明的特征并不拘限于此,任何本领域的技术人员,显而易见的变化或修改,都可涵盖于本发明的专利范围中。The above descriptions are only the best specific embodiments of the present invention, and the features of the present invention are not limited thereto. Any changes or modifications obvious to those skilled in the art can be included in the patent scope of the present invention.

Claims (5)

1. semi bridge type inversion circuit that utilizes the push-pull type control chip to drive two N-MOS is connected in a side of a transformer, in order to a DC power supply is converted to an AC power, includes:
A push-pull type control chip is provided with two outputs;
A drive circuit is provided with two inputs and two outputs, and these two inputs are connected to two outputs of this push-pull type control chip, accept the control of this push-pull type control chip; And
A semi bridge type switch module, form by one the one N channel fet and one the 2nd N channel fet, each N channel fet all is provided with a control end, and be connected to two outputs of this drive circuit, driving by this drive circuit, in order to this DC power supply is switched to this AC power, and be sent to a side of this transformer.
2. the semi bridge type inversion circuit that utilizes the push-pull type control chip to drive two N-MOS as claimed in claim 1 is characterized in that, these two N channel fet are formed a positive half cycle driving or a negative half period drives.
3. the semi bridge type inversion circuit that utilizes the push-pull type control chip to drive two N-MOS as claimed in claim 1, it is characterized in that, the drain electrode of the one N channel fet and the 2nd N channel fet is connected to side of this transformer, and the source terminal of these two N channel fet is connected respectively to a dc power supply terminal and a reference edge.
4. the semi bridge type inversion circuit that utilizes the push-pull type control chip to drive two N-MOS as claimed in claim 1 is characterized in that this drive circuit includes:
A high frequency transformer, have first input end, second input, first output and second output, the first input end of high frequency transformer is connected to an output of this push-pull type control chip by a RC series circuit, and second input of high frequency transformer is connected to a reference edge, first output of high frequency transformer, be connected to the control end of a N channel fet by one first resistance, second output of high frequency transformer is connected to a side of this transformer;
One second resistor is connected in another output of this push-pull type control chip and the control end of the 2nd N channel fet;
A damping resistance is connected to first output of high frequency transformer and second output of high frequency transformer;
A diode is connected to this second resistor.
5. the circuit that utilizes the push-pull type control chip to drive the semi-bridge converter device as claimed in claim 4, it is characterized in that, the cathode terminal of this diode is connected to another output of this push-pull type control chip, and anode tap is connected to the control end of the 2nd N channel fet.
CNB200410071037XA 2004-07-27 2004-07-27 Semi-bridge type converter circuit for driving double N-MOS by using push-pull control chip Expired - Fee Related CN100421347C (en)

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CN100542000C (en) * 2006-07-21 2009-09-16 联昌电子企业股份有限公司 Double N channel half-bridge type current converter
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CN100561846C (en) 2006-12-22 2009-11-18 群康科技(深圳)有限公司 converter circuit

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US6317347B1 (en) * 2000-10-06 2001-11-13 Philips Electronics North America Corporation Voltage feed push-pull resonant inverter for LCD backlighting
JP2002034269A (en) * 2000-07-14 2002-01-31 Sekisui Chem Co Ltd Inverter
CN1405963A (en) * 2001-09-20 2003-03-26 香港大学 Device for Improving Stability and Dynamic Response of Half-Bridge Converters

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002034269A (en) * 2000-07-14 2002-01-31 Sekisui Chem Co Ltd Inverter
US6317347B1 (en) * 2000-10-06 2001-11-13 Philips Electronics North America Corporation Voltage feed push-pull resonant inverter for LCD backlighting
CN1405963A (en) * 2001-09-20 2003-03-26 香港大学 Device for Improving Stability and Dynamic Response of Half-Bridge Converters

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