CN100416797C - Symmetrical inductance element - Google Patents

Abstract

The invention discloses a symmetrical inductance element, which comprises: the first and second winding parts are symmetrical to each other, and the coupling part is arranged on the first and second winding parts. Each winding part comprises a first half-coil type conducting wire layer, a second half-coil type conducting wire layer, a third half-coil type conducting wire layer and a fourth half-coil type conducting wire layer which are sequentially and concentrically arranged, and each half-coil type conducting wire layer is provided with a first end and a second end. The coupling portion includes: a first pair and a second pair of connection layers, one of which is an upper cross-over layer and the other of which is a lower cross-over layer. The second ends of the first and fourth half-turn conductive layers of the first winding portion are connected to the second ends of the second and third half-turn conductive layers of the second winding portion through a first pair of connecting layers, and the first and fourth half-turn conductive layers of the second winding portion are connected to the second ends of the second and third half-turn conductive layers of the first winding portion through a second pair of connecting layers.

Description

Symmetrical inductive element

technical field

The present invention relates to a semiconductor device, and more particularly to a symmetrical inductance element suitable for differential operation.

Background technique

Many digital and analog components and circuits have been successfully used in semiconductor integrated circuits. The above components include passive components such as resistors, capacitors or inductors. A typical semiconductor integrated circuit includes a silicon substrate. More than one dielectric layer is disposed on the substrate, and more than one metal layer is disposed in the dielectric layer. These metal layers can be used to form on-chip components, such as on-chip inductors, through current semiconductor process technology.

Traditionally, on-chip inductors are formed on a substrate and used in radio frequency band IC designs. Please refer to FIG. 1 , which shows a schematic plan view of a conventional two-turn symmetrical inductance element. The inductance element is formed in the insulating layer 110 above the substrate 100 , and includes: first and second winding portions symmetrically arranged in the insulating layer 110 on both sides of the dotted line 2 . The first winding part includes first and second semi-circular wire layers 101 , 103 , and the second winding part includes third and fourth semi-circular conductive layers 102 , 104 . The second semicircular wire layer 103 is parallel to the first semicircular conductive layer 101 and located outside it. The fourth semi-circular wire layer 104 is parallel to and outside the third semi-circular conductive layer 102 . Each half-coil wire layer has first and second ends 10 and 20 , wherein the first end 10 of the first half-coil wire layer 101 extends and connects to the first end 10 of the third half-coil wire layer 102 .

In order to maintain the geometric symmetry of the inductance element, the second end 20 of the second semi-circular wire layer 103 is electrically connected to the second end 20 of the third semi-circular wire layer 102 through an underpass layer 111 . In addition, the second end 20 of the fourth semi-circular wire layer 104 is electrically connected to the second end 20 of the first semi-circular wire layer (underpass) 101 through a cross layer 113 . The first ends 10 of the second and fourth semi-circular wire layers 103 and 104 have lateral extensions 30 and 40 for serving as input/output ends.

In order to further improve the quality factor (Q value) of the inductance element, it is proposed to increase the line width of each half-circle wire layer, as shown in FIG. 2 . In FIG. 2 , for the elements with the same numbers as those in FIG. 1 , for the related descriptions of these elements, please refer to the preceding paragraph.

Recently, more and more wireless communication designs use differential circuits to reduce common mode noise, and the inductors used in the above differential circuits need to be symmetrical to prevent common mode noise. In the inductor elements of FIGS. 1 and 2 , the lower bridging layer 111 is closer to the substrate 100 than the upper bridging layer 113 . Therefore, the parasitic capacitance between the first coil (primary coil) and the substrate 100 formed by the second and third semicircular wire layers 102 and 103 and the lower jumper layer 111 is greater than that formed by the first and fourth semicircular conductor layers. The parasitic capacitance between the second coil (secondary coil) formed by the loop wire layers 101 and 104 and the upper bridging layer 113 and the substrate 100 . Furthermore, since the thickness of the lower bridging layer 111 is smaller than that of the upper bridging layer 113 , the conductor loss of the first coil is also greater than that of the second coil. As a result, in differential operation, the above-mentioned symmetrical inductance elements cannot effectively reduce common-mode noise.

Therefore, it is necessary to seek a new design of symmetrical inductance components to effectively reduce common-mode noise.

Contents of the invention

In view of this, the present invention provides a symmetrical inductance element, comprising: an insulating layer, a first and a second winding portion, and a coupling portion. The insulating layer is disposed on the substrate. The first and second winding parts are symmetrically arranged in the insulating layer, and each winding part includes first, second, third and fourth semi-circular wire layers arranged concentrically in sequence, and each half-circular conductive layer It has a first end and a second end, wherein the first ends of the first and third half-coil wire layers of each winding part are coupled to each other, and the second half-coil wire layers of the first and second winding parts The first ends of the first and second winding parts are coupled to each other, and the first ends of the fourth half-coil wire layers of the first and second winding parts are coupled to each other. The coupling part is arranged in the insulating layer between the first and second winding parts, including: a first pair and a second pair of connecting layers, wherein one pair of connecting layers is an upper bridging layer and the other pair of connecting layers is a lower pair bridging layer. The second ends of the first and fourth semi-circular wire layers of the first winding part are respectively connected to the second ends of the second and third semi-circular conductive layers of the second winding part through the first pair of connecting layers , and the first and fourth semi-circular wire layers of the second winding part are respectively connected to the second ends of the second and third semi-circular conductive layers of the first winding part through the second pair of connecting layers.

The present invention also provides a symmetrical inductance element, which includes an insulating layer arranged on a base, at least two first wire groups arranged in the insulating layer, wherein each first wire group has two first wires; At least two sets of second wire groups in the insulating layer, wherein each second wire group has two second wires; a central area surrounded by the first wire group and the second wire group, and the first wires The first group and the second group of wires are located symmetrically with respect to the central area; and at least one set of bridging layers. Wherein, the jumper layer is used to connect the corresponding first wire group and the second wire group, and each group of jumper layers has a first jumper layer and a second jumper layer. In addition, each first wire group has two first wires, and each second wire group has two second wires. Further, for the odd groups of first wire groups and second wire groups counted outward from the central area, the first wires located inside are electrically connected to the second wires located outside through the first bridging layer, and the first wires located outside are electrically connected to the second wires located outside. The wire is electrically connected to the second wire located inside through the second jumper layer. In addition, for the even groups of first wire groups and second wire groups counted outward from the central area, the first wires located inside are electrically connected to the second wires located outside through the second bridging layer, and the first wires located outside are electrically connected to the second wires located outside. It is electrically connected with the second wire located inside through the first jumper layer.

The present invention further provides a symmetrical inductance element, which includes an insulating layer disposed on a substrate, at least one first wire group disposed in the insulating layer, at least one second wire group disposed in the insulating layer, and at least one Group spanning layers. Wherein, the set of bridging layers is used to connect the corresponding first wire group and the second wire group, and each set of bridging layers has a first bridging layer and a second bridging layer. Besides, each first wire group has four first wires, and each second wire group has four second wires, wherein the first wire group and the second wire group are arranged axially symmetrically. Further, the two first wires on the outside of the first wire group are electrically connected to the two second wires on the inside of the corresponding second wire group through the two first bridging layers. The two inner first wires in the first wire group are electrically connected to the two outer second wires in the corresponding second wire group through the two second jumper layers.

Description of drawings

FIG. 1 is a schematic plan view showing a conventional two-turn symmetrical inductance element.

FIG. 2 is a schematic plan view showing a conventional two-turn symmetrical inductance element.

FIG. 3 is a schematic plan view showing a two-turn symmetrical inductance element according to an embodiment of the present invention.

FIG. 4 is a schematic plan view showing a two-turn symmetrical inductance element according to another embodiment of the present invention.

simple notation

In some drawings of the prior art

2～dotted line; 10～first end; 20～second end; 30, 40～lateral extension; 100～base; 101～first semicircle-shaped conductor layer; 103～second semicircular conductor layer; 102 ~Third half-circle wire layer; 104~Fourth half-circle wire layer; 110~Insulation layer; 111~Lower jumper layer; 113~Upper jumper layer.

In some drawings of the technology of the present invention

4～dotted line; 50～first end; 60～second end; 70, 80～lateral extension; 300～base; 301, 302, 309, 310～first half-circle wire layer; , 312～the second half-circle conductor layer; 305, 306, 313, 314～the third semicircle conductor layer; 307, 308, 315, 316～the fourth semicircle conductor layer; 410～insulation layer; 320, 322～the first pair of connection layers; 321, 323～the second pair of connection layers; 324, 326～the third pair of connection layers; 325, 327～the fourth pair of connection layers; S～line spacing; W～line width; 601～ Central area; 701, 801~lower connection floor.

Detailed ways

A schematic plan view of a two-turn symmetrical inductance element according to an embodiment of the present invention will be described below with reference to FIG. 3 . The symmetrical inductance element includes: an insulating layer 410 , first and second winding parts, and a coupling part. The insulating layer 410 is disposed on the substrate 300 .

The substrate 300 includes a silicon substrate or other existing semiconductor substrates. The substrate 300 may include various elements, such as transistors, resistors and other commonly used semiconductor elements. Moreover, the substrate 300 may also include other conductive layers (eg, copper, aluminum, tungsten, or alloys thereof) and insulating layers (eg, silicon oxide layer, silicon nitride layer, or low dielectric material layer). Here, in order to simplify the drawings, only a flat base is shown.

In addition, the insulating layer 410 can be a single layer of low dielectric material or a multilayer dielectric structure. In this embodiment, the insulating layer 410 may include a silicon oxide layer, a silicon nitride layer or a low dielectric material layer.

The first winding portion is disposed in the insulating layer 410 and located on a first side of the dotted line 4 . The first winding portion includes first, second, third and fourth semi-circular wire layers 301 , 303 , 305 and 307 arranged concentrically in sequence. The second winding portion is disposed in the insulating layer 410 and located on a second side of the dotted line 4 , and the second side is opposite to the first side. The second winding portion includes first, second, third and fourth semi-circular wire layers 302 , 304 , 306 and 308 arranged concentrically in sequence. The second winding part is symmetrical to the first winding part with the dotted line 4 as the axis of symmetry. The first and second winding parts can form a substantially circular, rectangular, hexagonal, octagonal or polygonal shape. Here, to simplify the drawings, an octagon is used as an example for illustration. Furthermore, the material of the first and second winding parts can be made of metal, such as copper, aluminum or alloys thereof.

In some embodiments, the first, second, third and fourth semi-circular wire layers 301, 303, 305 and 307 of the first winding part are connected with the first, second, third The line width W and the line spacing S may be the same as those of the fourth semi-circular wire layers 302 , 304 , 306 and 308 .

Furthermore, each semi-circular wire layer has a first end 50 and a second end 60 . In this embodiment, the first ends 50 of the first and third semi-circular wire layers 301 and 305 of the first winding part are coupled to each other, and the first and third semi-circular wires of the second winding part First ends 50 of layers 302 and 306 are coupled to each other. For example, the first and third semi-circular wire layers 301 and 305 of the first winding part are connected through the lower connection layer 701, while the first and third semi-circular conductive layers 302 and 305 of the second winding part are connected. 306 are also connected to each other through another lower connection layer 801.

The first semi-circular wire layers 301 and 302 of the first and second winding parts have lateral extensions 70 and 80 for serving as signal input or output terminals. Moreover, the first end 50 of the second semi-circular wire layer 303 of the first winding part extends to the first end 50 of the second semi-circular wire layer 304 of the second winding part to couple with each other. The first end 50 of the fourth semi-circular wire layer 307 of the first winding part extends to the first end 50 of the fourth semi-circular wire layer 308 of the second winding part to couple with each other.

The coupling portion is disposed in the insulating layer 410 between the first and second winding portions. The coupling part includes a first pair of connection layers 320 and 322 and a second pair of connection layers 321 and 323 to connect the second ends 60 of the first and second winding parts.

In an embodiment of the present invention, in order to maintain the geometric symmetry of the inductance element, the first pair of connection layers 320 and 322 connect the second end 60 of the first semi-circular wire layer 301 of the first winding part with the second winding part. The second end 60 of the second semi-circular wire layer 304 . Moreover, the connection layer 322 connects the second end 60 of the fourth semi-circular wire layer 307 of the first winding part and the second end 60 of the third semi-circular conductive layer 306 of the second winding part. Furthermore, the second pair of connection layers 321 and 323 connect the second end 60 of the first half-ring type wire layer 302 of the second winding part with the second end 60 of the second half-ring type wire layer 303 of the first winding part 60. The connection layer 323 connects the second end 60 of the fourth semi-circular wire layer 308 of the second winding part with the second end 60 of the third semi-circular conductive layer 305 of the first winding part.

Among the first pair of connection layers (320 and 322) and the second pair of connection layers (321 and 323), one pair is an upper bridging layer and the other pair is a lower bridging layer. In this embodiment, the first pair of connection layers 320 and 322 are upper bridging layers, and the second pair of connection layers 321 and 323 are lower bridging layers. In other embodiments, the first pair of connecting layers 320 and 322 may be lower bridging layers, and the second pair of connecting layers 321 and 323 may be upper bridging layers.

In FIG. 3, the first and third semi-circular wire layers 301 and 305 of the first winding part and the second and fourth semi-circular conductive layers 304 and 308 of the second winding part can constitute the first coil, And the first coil can have an upper bridge layer and a lower bridge layer as electrical connection layers. In addition, the first and third half-coil wire layers 302 and 306 of the second winding part and the second and fourth half-coil wire layers 303 and 307 of the first winding part can constitute a second coil, and this The second coil may have upper and lower jumper layers as electrical connection layers. That is, the number of upper and lower bridging layers in the first coil is the same as the number of upper and lower bridging layers in the second coil.

Therefore, the parasitic capacitance between the first coil and the substrate 300 may be substantially the same as that between the second coil and the substrate 300, and the conductor loss of the first coil is also substantially the same as that of the second coil. In differential operation, the symmetrical inductive element according to the present invention can effectively reduce common mode noise because the first coil and the second coil have substantially the same parasitic capacitance and conductor loss.

The symmetrical inductance element of other embodiments of the present invention will be described below with reference to FIG. 4 , wherein the components that are the same as those of the symmetrical inductive element in FIG. 3 use the same reference numerals and related descriptions will be omitted. In this embodiment, the symmetrical inductance element further includes: a third winding part, a fourth winding part and a second coupling part. The third winding part is disposed in the insulating layer 410 outside the first winding part and is parallel to the first winding part. The third winding portion includes first, second, third and fourth semi-circular wire layers 309 , 311 , 313 and 315 arranged in sequence. The fourth winding part is disposed in the insulating layer 410 outside the second winding part and is parallel to the second winding part. The second winding part includes first, second, third and fourth semi-circular wire layers 310 , 312 , 314 and 316 arranged in sequence. The third and fourth winding parts can form a substantially circular, rectangular, hexagonal, octagonal or polygonal shape. Here, to simplify the drawings, an octagon is used as an example for illustration. Furthermore, the material of the third and fourth winding parts can be made of metal, such as copper, aluminum or their alloys.

In the embodiment of FIG. 4, the first, second, third and fourth semi-circular wire layers 309, 311, 313 and 315 of the third winding part are connected with the first and second winding layers of the fourth winding part. , the third and fourth semi-circular wire layers 310 , 312 , 314 and 316 may have the same line width W and line spacing S.

In this embodiment, the first ends 50 of the first and third semi-circular wire layers 309 and 313 of the third winding part are coupled to each other and coupled to the first coil-shaped wire layer of the first winding part 301. The first ends 50 of the first and third semi-coiled wire layers 310 and 314 of the second winding part are coupled to each other and coupled to the first coiled wire layer 302 of the second winding part. For example, the lower connection layer 701 is used to connect the first and third semi-circular wire layers 309 and 313 of the third winding part, while the first and third semi-circular conductive layers 310 and 313 of the fourth winding part 314 are also connected to each other through another lower connection layer 801.

The first semi-circular wire layers 309 and 310 of the third and fourth winding parts respectively have lateral extensions 70 and 80 for serving as signal input or output terminals. Furthermore, the first end 50 of the second semi-circular wire layer 311 of the third winding part extends to the first end 50 of the second semi-circular wire layer 312 of the fourth winding part to couple with each other. The first end 50 of the fourth semi-circular wire layer 315 of the third winding part extends to the first end 50 of the fourth semi-circular wire layer 316 of the fourth winding part to couple with each other.

A coupling part is provided in the insulating layer 410 between the third and fourth winding parts, and this coupling part includes a third pair of connecting layers 324 and 326, a fourth pair of connecting layers 325 and 327, to connect the third and The second end 60 of the fourth winding part. The connection layer 324 connects the second end 60 of the first semi-circular conductor layer 309 of the third winding part with the second end 60 of the second semi-circular conductor layer 312 of the fourth winding part, and the connection layer 326 connects the second The second end 60 of the fourth semi-circular wire layer 315 of the third winding part and the second end 60 of the third semi-circular conductive layer 314 of the fourth winding part. Moreover, the connection layer 325 connects the second end 60 of the first half-circle-shaped conductor layer 310 of the fourth winding part with the second end 60 of the second half-circle-form conductor layer 311 of the third winding part, and the connection layer 327 connects the second end 60 of the fourth semi-circular conductor layer 316 of the fourth winding part and the second end 60 of the third semi-circular conductor layer 313 of the third winding part.

Of the third pair of connection layers (324 and 326) and the fourth pair of connection layers (325 and 327), one pair is an upper bridging layer and the other pair is a lower bridging layer. In this embodiment, as shown in FIG. 4 , the third pair of connection layers 324 and 326 is an upper bridge layer, and the fourth pair of connection layers 325 and 327 is a lower bridge layer. In other embodiments, the third pair of connecting layers 324 and 326 may be lower bridging layers, and the fourth pair of connecting layers 325 and 327 may be upper bridging layers.

In the embodiment of FIG. 4, the first and third semi-circular wire layers 301 and 305 of the first winding part, the first and third semi-circular conductive layers 309 and 313 of the third winding part, the first The second and the fourth semi-circle type wire layers 304 and 308 of the second winding part and the second and the fourth semi-circle type wire layers 312 and 316 of the fourth winding part can constitute the first coil; and the second winding part The first and third semi-circular wire layers 302 and 306, the first and third semi-circular conductive layers 310 and 314 of the fourth winding part, the second and fourth semi-circular conductive wires of the first winding part The layers 303 and 307 and the second and fourth half-coil wire layers 311 and 315 of the third winding portion may constitute a second coil. The first and second coils may have the same number of upper and lower bridging layers. Therefore, in differential operation, this symmetrical inductance element is effective in reducing common-mode noise.

In an embodiment of the present invention, the connection mode between the lower bridging layer and the first end or the second end is that the two ends of the bridging layer are respectively connected to a hole (via), and there is a conductive material (such as copper, aluminum, etc.) in the hole. or its alloy and other metal substances), and one end of the hole is electrically connected to the first end or the second end of the wire layer. In addition, the connection method between the lower connection layer (701 or 801) and the first end is that the first end of the wire layer is connected to a hole, and there is a conductive substance (such as copper, aluminum or its alloys and other metal substances) in the hole. , and one end of the hole is electrically connected to the lower connection layer.

Based on the above descriptions about the embodiments of FIG. 3 and FIG. 4 , we can further elaborate on the design of the inductance element in the embodiment of the present invention.

In FIG. 3 and FIG. 4 , the area surrounded by wire layers (or called wires) 307 and 308 can be regarded as a central area 601 . From the central area 601 to the outside, the conductor layers 307, 303, 308, 304, 315, 311, 316 and 312 can be regarded as odd-numbered conductors, and the conductor layers 305, 301, 306, 302, 313, 309, 314 and 310 Equal can be regarded as the even-numbered wire. Each wire has a first end 50 and a second end 60 . And to the two wires farthest from the central region 601 (wires 301 and 302 in FIG. 3 , or wires 309 and 310 in FIG. 4 ), the first ends 50 of each wire are connected to the extension 70 and the extension 80 respectively. .

There are two types of connection methods for the first end 50 of the wire. One is that the first ends of the even-numbered wires on the same side of the dotted line 4 are electrically connected to each other. Second, for the corresponding odd-numbered wires on both sides of the dotted line 4, the first ends of these wires are electrically connected to each other.

Regarding the first method, for example, in FIG. 3 , the conductive wires 301 and 305 on the side of the dotted line 4 belong to the even-numbered conductive wires, and are electrically connected through the lower connection layer 701 . The wires 302 and 306 on the other side of the dotted line 4 also belong to the even-numbered wires and are electrically connected through the lower connection layer 801 . Also in FIG. 4 , the wires 301 , 305 , 313 and 309 on the side of the dotted line 4 belong to the even-numbered wires and are electrically connected through the lower connection layer 701 . The wires 306 , 302 , 314 and 310 on the other side of the dotted line 4 also belong to the even-numbered wires and are electrically connected through the lower connection layer 801 . It should be noted that the lower connection layer in FIG. 4 can be a single connection layer to connect all even-numbered wires, or it can be composed of multiple connection layers, and this connection layer only electrically connects two adjacent even-numbered wires. wires.

Regarding the second type of mode, for example, in Fig. 3 and Fig. 4, the wires 307, 303, 315, and 311 on one side of the dotted line 4 belong to the odd-numbered wires, and these wires are respectively connected to the wires on the other side of the dotted line 4. The wires 308 , 304 , 316 and 312 corresponding to each other on one side are electrically connected.

Regarding the connection mode of the second end 60 of the wire, if two adjacent wires (for example: wires 307 and 305, wires 308 and 306, wires 303 and 301, wires 304 and 302) are used as a wire group, each wire group The second end of the inner wire is electrically connected to the second end of the outer wire of the corresponding wire group, and the connection is through the jumper layer. That is, the wire groups corresponding to each other centered on the dotted line 4 need two jumper layers to be electrically connected to each other. The two bridging layers can be staggered up and down. For example, in Fig. 3 and Fig. 4, the side of the dotted line 4 has the first group of the first wire group (wires 307 and 305) and the second group of the first wire group (wires 303 and 301), and the side of the dotted line 4 On the other side there is a first set of second wire sets (wires 308 and 306) and a second set of second wire sets (wires 304 and 302). There are two jumper layers 322 and 323 between the first group of first wire groups and the first group of second wire groups, and there are two jumper layers 320 between the second group of first wire groups and the second group of second wire groups and 321.

In Fig. 3 and Fig. 4, the odd-th wire groups counted outward from the central area 601 may have the same straddling layer structure, but this structure is different from the even-th wire group's straddling structure. . For example, when the jumper layer connecting the inner conductors 307 of the first group of first conductors and the outer conductors 306 of the first group of second conductors is set on the same layer as the conductors, the second group of first conductors The bridging layers of the inner wires 305 and the outer wires 302 of the second group of second wires will be placed under the wire layer. At this time, the jumper layer connecting the outer wires 305 of the first group of first wires and the inner wires 308 of the first group of second wires is placed under the wire layer, while the outer wires 301 of the second group of first wires The bridging layers of the outer and inner wires 304 of the second group of second wires are arranged on the same layer as the wires.

Regarding the connection manner of the second end 60 of the wires, four adjacent wires (for example: wires 307 , 305 , 303 and 301 , wires 308 , 306 , 304 and 302 ) can also be described as a wire group.

For example, in FIG. 3 and FIG. 4 , the wires 307 , 305 , 303 and 301 etc. form a first wire group, and the wires 308 , 306 , 304 and 302 etc. constitute a second wire group. The second ends of the outer wires 301 and 307 of the first wire set are electrically connected to the second ends of the inner wires 304 and 306 of the second wire set through the first jumper layer ( 320 and 322 ). The second ends of the inner wires 303 and 305 of the first wire group are also electrically connected to the second ends of the outer wires 302 and 308 of the second wire group through the second jumper layer ( 321 and 323 ).

Besides, the first bridging layers (320 and 322) and the second bridging layers (321 and 323) are staggered up and down. The principles of this staggered up and down include:

(1) In the first jumper layer (320 and 322) and the second jumper layer (321 and 323), one jumper layer will be on the same layer as the wire layer, and the other jumper layer will be placed on the wire layer below.

(2) The two bridging layers ( 322 and 323 ) close to the central area 601 are staggered up and down, and the two bridging layers ( 320 and 321 ) away from the central area 601 are staggered up and down.

It is worth noting that, in the embodiment of the present invention, the reason why the electrical connection mode of the second end of the wire layer is not implemented at the first end is that the inductance symmetry breaking caused by the parasitic capacitance generated by the substrate can be avoided The problem.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make changes and modifications without departing from the spirit and scope of the present invention. Therefore The protection scope of the present invention should be defined by the appended claims.

Claims (10)

1. symmetrical inductance element comprises:

Insulating barrier is arranged in the substrate;

First and second winding sections, be symmetrically set in this insulating barrier, each winding section comprises the first, second, third and the 4th half-turn type conductor layer of concentric arrangement successively, and each half-turn type conductor layer has first end and second end, wherein this first end of this of each winding section first and the 3rd half-turn type conductor layer couples mutually, this first end of this second half-turn type conductor layer of first and second winding sections couples mutually, and this first end of the 4th half-turn type conductor layer of first and second winding sections couples mutually; With

First couplings, be arranged on this first and this second winding section between this insulating barrier in, comprising:

First pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of this first winding section and this second winding section and this first winding section and second winding section respectively;

Second pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of this second winding section and this first winding section and this second winding section and first winding section respectively;

Wherein in this first couple and this second pair of articulamentum a pair of for last cross-over connection layer another to being cross-over connection layer down.

2. symmetrical inductance element as claimed in claim 1 also comprises:

Third and fourth winding section, be arranged in this insulating barrier in this outside, first and second winding sections, and parallel this first and second winding section of difference, each winding section comprises first of concentric arrangement successively, second, the third and fourth half-turn type conductor layer, and each half-turn type conductor layer has first end and second end, wherein this first end of this of each winding section first and the 3rd half-turn type conductor layer couples mutually, this first end of this second half-turn type conductor layer of third and fourth winding section couples mutually, and this first end of the 4th half-turn type conductor layer of third and fourth winding section couples mutually; With

Second couplings is arranged in this insulating barrier between the 3rd and the 4th winding section, comprising:

The 3rd pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of the 3rd winding section and the 4th winding section and the 3rd winding section and the 4th winding section respectively; With

The 4th pair of articulamentum connects this second end of the 3rd half-turn type conductor layer of the 4th half-turn type conductor layer of this second end of this second half-turn type conductor layer of this first half-turn type conductor layer of the 4th winding section and the 3rd winding section and the 4th winding section and the 3rd winding section respectively;

Wherein in the 3rd pair and the 4th pair of articulamentum a pair of for last cross-over connection layer another to being cross-over connection layer down.

3. symmetrical inductance element comprises:

Insulating barrier is arranged in the substrate;

At least two groups first lead group is arranged in this insulating barrier, and wherein each first lead group has two first leads (301,303; 305,307);

At least two groups second lead group is arranged in this insulating barrier, and wherein each second lead group has two second leads (302,304; 306,308);

The central area, it is surrounded by this first lead group and this second lead group, and this first lead group is symmetrical arranged with respect to this central area respectively with this second lead group; With

At least one group of cross-over connection layer is used to connect in correspondence with each other the first lead group and the second lead group, and wherein every group of cross-over connection layer has the first cross-over connection layer and the second cross-over connection layer;

Wherein, at the odd number group first lead group and the second lead group of counting outward by the central area, first lead (307) that is positioned at the inboard is electrically connected with second lead (306) that is positioned at the outside by the first cross-over connection layer, and first lead (305) outside being positioned at is electrically connected with second lead (308) that is positioned at the inboard by the second cross-over connection layer;

Wherein, at the even number set first lead group and the second lead group of counting outward by the central area, first lead (303) that is positioned at the inboard is electrically connected with second lead (302) that is positioned at the outside by the second cross-over connection layer, and first lead (301) outside being positioned at is electrically connected with second lead (304) that is positioned at the inboard by the first cross-over connection layer.

4. symmetrical inductance element as claimed in claim 3, first lead that wherein is arranged in the outside in the first lead group is electrically connected on first lead that the first adjacent lead group is positioned at the outside.

5. symmetrical inductance element as claimed in claim 3, second lead that wherein is arranged in the outside in the second lead group is electrically connected on second lead that the second adjacent lead group is positioned at the outside.

6. symmetrical inductance element as claimed in claim 3 wherein is arranged in the first inboard lead and is electrically connected on second lead that the corresponding second lead group is positioned at the inboard in the first lead group.

7. symmetrical inductance element comprises:

Insulating barrier is arranged in the substrate;

At least one first lead group is arranged in this insulating barrier, and wherein this first lead group has four first leads (301,303,305,307);

At least one second lead group is arranged in this insulating barrier, and wherein this second lead group has four second leads (302,304,306,308), and wherein this first lead group and this second lead group are provided with each other axisymmetrically; With

At least one group of cross-over connection layer is used to connect in correspondence with each other the first lead group and the second lead group, and wherein every group of cross-over connection layer has the first cross-over connection layer and the second cross-over connection layer;

Wherein, in this first lead group, be positioned at two first leads (301 in two outsides, 307) be electrically connected on two second leads (304 that are positioned at the inboard in this second lead group by two first cross-over connection layers, 306), and in this first lead group, be positioned at two first inboard leads (303,305) be electrically connected on two second leads (302,308) that are positioned at two outsides in this second lead group by two second cross-over connection layers.

8. symmetrical inductance element as claimed in claim 7 wherein, in each lead group, is to be electrically connected mutually by the interior even number lead of number outward.

9. symmetrical inductance element as claimed in claim 7 wherein, is electrically connected in the adjacent lead group by the interior even number lead of number outward by the interior even number lead of number outward in the lead group.

10. symmetrical inductance element as claimed in claim 7 wherein, is electrically connected in the corresponding second lead group by interior odd number second lead of number outward by interior odd number first lead of number outward in the first lead group.

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