CN100403503C - Method for manufacturing high reflectivity semiconductor illumination integrated light source module - Google Patents
Method for manufacturing high reflectivity semiconductor illumination integrated light source module Download PDFInfo
- Publication number
- CN100403503C CN100403503C CNB2005100294504A CN200510029450A CN100403503C CN 100403503 C CN100403503 C CN 100403503C CN B2005100294504 A CNB2005100294504 A CN B2005100294504A CN 200510029450 A CN200510029450 A CN 200510029450A CN 100403503 C CN100403503 C CN 100403503C
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- CN
- China
- Prior art keywords
- circuit board
- electrode
- light source
- high reflectivity
- copper film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 17
- 238000002310 reflectometry Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 33
- 239000010949 copper Substances 0.000 claims abstract description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000003466 welding Methods 0.000 claims abstract description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052718 tin Inorganic materials 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 239000011241 protective layer Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000011135 tin Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 abstract 6
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Led Device Packages (AREA)
Abstract
The present invention belongs to the technical field of electronic devices, more specifically a method for manufacturing high reflectivity semiconductor illumination integrated light source modules. The present invention has the processing steps that both faces of a circuit board are plated with copper films; graphic etching treatment is carried out to the copper films according to designed shapes; fixing holes for LED electrodes are drilled in a specific area of the circuit board; a welding hole of a copper film electrode on the back surface of the circuit board is plated with tin; the surface of the copper film used as an electric conducting wire on the back surface of the circuit board is coated with weld resistant agents as a protective layer; the surface of the copper film not in the electrode hole area on the front surface of the circuit board is plated with tin or nickel or aluminium or other metal thin films with high reflectivity; LEDs are inserted into the electrode fixing hole and are welded with electrode leading wires. Compared with the prior art, the present invention adopts metal films with high reflectivity to increase the light output efficiency and also adopts the idea of modular design, so that scale production and scale application are easy to realize, and the manufacturing cost of light source modules is effectively lowered.
Description
[technical field]
The present invention relates to technical field of electronic devices, specifically a kind of manufacture method of high reflectivity semiconductor illumination integrated light source module.
[background technology]
Semiconductor lighting is that a kind of new and effective solid light source is made with LED (Light Emitting Diode), have many advantages such as long-life, energy-conservation, economy, environmental protection, rich color, microminiaturization, progressively substituting traditional incandescent lamp and fluorescent lamp.But can't in general illumination, use because of its luminous flux is very little as light source owing at present single led.Then can address this problem as if integrated optical source after plurality of LEDs is carried out serial or parallel connection, and when making LED integrated optical source, how adopt the device architecture that is easy to large-scale production, low-cost manufacturing process and the output of high efficiency light then very crucial.
[summary of the invention]
The objective of the invention is for overcoming the deficiencies in the prior art, proposed the manufacture method of the last a kind of high reflectivity semiconductor illumination integrated light source module for preparing the plurality of LEDs plane integrated light-source module and design of employing double-sided printed-circuit board PCB (Printed Circuit Board).
For achieving the above object, design a kind of manufacture method of high reflectivity semiconductor illumination integrated light source module, its processing step is: 1, the two-sided copper plating film of circuit board; 2, by the moulding of design copper film is carried out graphical etching processing; 3, get out the fixing hole of LED electrode in the circuit board specific region; 4, zinc-plated to the welding hole of the copper film electrode of back of circuit board, the copper film surface as conductive connecting line of back of circuit board is coated with solder resist makes protective layer, the copper film electroplating surfaces with tin in the positive non-electrode hole of circuit board zone or the metallic film of nickel or aluminium or other high reflectance; 5, LED is inserted electrode fixing holes and weld with contact conductor; 6, between the LED be cascaded structure.Described high reflectivity semiconductor illumination integrated light source module can be used for general illumination, electric, electronic technology field.
Compare with prior art, the present invention adopts the metallic film of high reflectance that light output efficiency is greatly improved, and has adopted modular design method, is easy to large-scale production and application, and reduces the manufacturing cost of light source module effectively.
[description of drawings]
Fig. 1 is the board structure of circuit figure of two-sided plating structure among the present invention.
Fig. 2 is the structure chart that in the embodiment of the invention circuit board surface copper film is carried out circuit board after the graphical etching processing.
Fig. 3 is the board structure of circuit figure that gets out in the circuit board specific region in the embodiment of the invention after the LED electrode fixing holes.
Fig. 4 is the structure chart of the circuit board behind the copper film plating metal on surface film that copper film electrode welding hole is zinc-plated on the circuit board in the embodiment of the invention, conductive connecting line copper film surface is coated with solder resist, the positive non-electrode hole of circuit board zone.
Fig. 5 in the embodiment of the invention inserts LED electrode fixing holes and the structure chart of the high reflectivity semiconductor illumination integrated light source module that forms in contact conductor welding back.
Fig. 6 is a high reflectivity semiconductor illumination integrated light source module Facad structure schematic diagram in the embodiment of the invention.
Fig. 7 is a high reflectivity semiconductor illumination integrated light source module structure schematic diagram in the embodiment of the invention.
Appointment Fig. 5 is a Figure of abstract.
Referring to accompanying drawing, 1 is the circuit board as substrate; 2 is the copper film in the two-sided plating of circuit board; 3 is the fixing hole of LED electrode; 4 is the metallic tin that plates on the back of circuit board copper film electrode welding hole; 5 is the metallic film of the surperficial high reflectance that plates of copper film in the positive non-electrode hole of circuit board zone; 6 is LED; 7 is the contact conductor plumb joint; 8 is the metallic film of the surperficial high reflectance that plates of copper film in the positive non-electrode hole of circuit board zone; 9 is circuit board; 10 is the fixing hole of LED electrode; 11 is the circuit board as substrate; 12 is the copper film as electrode connecting line of back of circuit board; 13 is the metallic tin that plates on the back of circuit board copper film electrode welding hole.
[embodiment]
The invention will be further described below in conjunction with accompanying drawing, and the present invention is still more clearly concerning the people of this professional skill field.
Embodiment:
The present invention is made up of LED and the two-sided printed circuit board (PCB) that is coated with metal; wherein LED is the light-emitting diode of high brightness; as GaInN; the LED of series such as GaN; can be monochrome or white; circuit board is formed for the conventional insulated substrate that is coated with copper film; its surface one side is for being coated with the electrode hole and the copper circuit connection line of tin; another side is the reflector layer of zinc-plated or metals such as nickel or aluminium; concrete processing step is: before this at the circuit board tow sides copper plating film as substrate; then according to the plane light source module of forming by arbitrary number LED that will install to the board design respective graphical; according to figure copper film is carried out graphical etching processing again; get out the fixing hole of LED electrode then in the circuit board specific region according to figure; as when being designed to 3 * 3LED array; copper film to the circuit board front carves equally distributed 9 LED preformed holes; respectively get out two LED electrode fixing holes then at the position that LED will be installed; then zinc-plated to the copper film electrode welding hole of back of circuit board; the copper film surface as conductive connecting line of back of circuit board is coated with solder resist makes protective layer; the copper film electroplating surfaces with tin in the positive non-electrode hole of circuit board zone or the metallic film of nickel or aluminium or other high reflectance: at last 9 LEDs are inserted electrode fixing holes and form series circuit, make the high reflectivity semiconductor illumination integrated light source module of 3 * 3 arrays with the contact conductor welding.
Claims (2)
1. the manufacture method of a high reflectivity semiconductor illumination integrated light source module is characterized in that:
Processing step is: 1, the two-sided copper plating film of circuit board; 2, by the moulding of design copper film is carried out graphical etching processing; 3, get out the fixing hole of LED electrode in the circuit board specific region; 4, zinc-plated to the welding hole of the copper film electrode of back of circuit board, the copper film surface as conductive connecting line of back of circuit board is coated with solder resist makes protective layer, the copper film electroplating surfaces with tin in the positive non-electrode hole of circuit board zone or the metallic film of nickel or aluminium or other high reflectance; 5, LED is inserted electrode fixing holes and weld with contact conductor; 6, between the LED be cascaded structure.
2. the manufacture method of a kind of high reflectivity semiconductor illumination integrated light source module as claimed in claim 1, it is characterized in that: described high reflectivity semiconductor illumination integrated light source module is used for the general illumination field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100294504A CN100403503C (en) | 2005-09-07 | 2005-09-07 | Method for manufacturing high reflectivity semiconductor illumination integrated light source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100294504A CN100403503C (en) | 2005-09-07 | 2005-09-07 | Method for manufacturing high reflectivity semiconductor illumination integrated light source module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1738016A CN1738016A (en) | 2006-02-22 |
| CN100403503C true CN100403503C (en) | 2008-07-16 |
Family
ID=36080758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100294504A Expired - Fee Related CN100403503C (en) | 2005-09-07 | 2005-09-07 | Method for manufacturing high reflectivity semiconductor illumination integrated light source module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100403503C (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1167966A (en) * | 1996-06-10 | 1997-12-17 | 摩托罗拉公司 | Integrated electro-optical package and method of fabrication |
| CN2439704Y (en) * | 2000-08-15 | 2001-07-18 | 罗斌 | LED dot matrix display having mounting holes |
| CN1387174A (en) * | 2002-06-24 | 2002-12-25 | 卢景贵 | Integrated LED light-guide display |
| CN1427198A (en) * | 2001-12-18 | 2003-07-02 | 财团法人工业技术研究院 | Light-emitting diode lighting source device |
| CN1436374A (en) * | 2001-04-12 | 2003-08-13 | 松下电工株式会社 | Light source device using LED, and method of producing same |
| CN1516088A (en) * | 2003-01-08 | 2004-07-28 | 炬鑫科技股份有限公司 | Module device of LED point matrix display |
| CN2664200Y (en) * | 2003-10-28 | 2004-12-15 | 夏志清 | A LED dot-matrix module having highly effective reflection hole |
-
2005
- 2005-09-07 CN CNB2005100294504A patent/CN100403503C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1167966A (en) * | 1996-06-10 | 1997-12-17 | 摩托罗拉公司 | Integrated electro-optical package and method of fabrication |
| CN2439704Y (en) * | 2000-08-15 | 2001-07-18 | 罗斌 | LED dot matrix display having mounting holes |
| CN1436374A (en) * | 2001-04-12 | 2003-08-13 | 松下电工株式会社 | Light source device using LED, and method of producing same |
| CN1427198A (en) * | 2001-12-18 | 2003-07-02 | 财团法人工业技术研究院 | Light-emitting diode lighting source device |
| CN1387174A (en) * | 2002-06-24 | 2002-12-25 | 卢景贵 | Integrated LED light-guide display |
| CN1516088A (en) * | 2003-01-08 | 2004-07-28 | 炬鑫科技股份有限公司 | Module device of LED point matrix display |
| CN2664200Y (en) * | 2003-10-28 | 2004-12-15 | 夏志清 | A LED dot-matrix module having highly effective reflection hole |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1738016A (en) | 2006-02-22 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SUZHOU JINNO SCIENCE AND TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SUN ZHUO Effective date: 20091218 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20091218 Address after: No. 8, Yip Road, Suzhou Town, Suzhou Industrial Park, Jiangsu, China Patentee after: Suzhou Jingneng Technology Co., Ltd. Address before: Department of physics, East China Normal University, Zhongshan North Road 3663, Shanghai Patentee before: Sun Zhuo |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080716 Termination date: 20200907 |