CN100397577C - Valve device and heat treatment device - Google Patents
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Abstract
本发明涉及一种阀装置和热处理装置,在热处理炉(1)的排气系统(12)的配管(13)上安装的主阀(18)的阀壳(21)上,形成两条旁路(32、33)。各旁路(32、33)由安装在阀壳(21)上的辅助阀(30、31)开闭。其中一个辅助阀(31)具有调节流量的结构。主阀(18)使用设置在主阀上的固定板(54),由螺栓和螺母固定在热处理装置的箱体(14)上。本发明可以简化排气系统的回绕配管,提高热处理装置的维修操作性。
The invention relates to a valve device and a heat treatment device, two bypasses are formed on the valve housing (21) of the main valve (18) installed on the piping (13) of the exhaust system (12) of the heat treatment furnace (1) (32, 33). Each bypass (32, 33) is opened and closed by an auxiliary valve (30, 31) installed on the valve casing (21). One of the auxiliary valves (31) has a flow regulating structure. The main valve (18) uses a fixing plate (54) arranged on the main valve, and is fixed on the casing (14) of the heat treatment device by bolts and nuts. The invention can simplify the revolving piping of the exhaust system and improve the maintenance operability of the heat treatment device.
Description
技术领域 technical field
本发明涉及一种热处理装置,特别是适用于热处理装置排气系统的阀装置,以及具有该阀装置的热处理装置。The invention relates to a heat treatment device, in particular to a valve device suitable for the exhaust system of the heat treatment device, and a heat treatment device with the valve device.
背景技术 Background technique
在半导体器件的制造工序中,为了对半导体基板等被处理体进行CVD(气相化学生长)等热处理,常使用热处理装置。该热处理装置包括放置上述基板的热处理炉,向热处理炉内供给处理气体等气体的气体供给系统,对热处理炉内进行减压排气的排气系统。In the manufacturing process of a semiconductor device, a heat treatment apparatus is often used to perform heat treatment such as CVD (Vapor Phase Chemical Growth) on an object to be processed such as a semiconductor substrate. The heat treatment apparatus includes a heat treatment furnace in which the substrate is placed, a gas supply system for supplying gas such as a processing gas into the heat treatment furnace, and an exhaust system for depressurizing and exhausting the heat treatment furnace.
该热处理装置在炉内抽真空时,为不扬起尘埃,在抽真空之始降低抽取流量,也即减速抽真空。为达此目的,排气系统具有图6所示的结构。排气系统12具有被限定的管径例如3英寸的配管13,这个配管13上按顺序配有由角阀构成的主阀(主开关阀)18,由蝶阀构成的主压力控制阀(图中未示)和减压泵(图中未示)。配管13与从主阀18旁通的约1/4英寸小直径旁通管60连接。第1辅助阀61和第2辅助阀62并列配置在旁通管60上。在旁通管60上,与第2辅助阀62还串联设有流量调节用针阀63。When the heat treatment device is evacuated in the furnace, in order not to raise dust, the extraction flow rate is reduced at the beginning of evacuation, that is, the vacuum is decelerated. For this purpose, the exhaust system has the structure shown in FIG. 6 . The
在将炉内从大气压减压至设定的处理压力时,为了首先进行减速抽真空,关闭主阀18和第1辅助阀61,打开第2辅助阀62,在针阀63中,开始以设定的微小流量抽取真空。然后,顺次打开第1辅助阀62、主阀61,在该状态下抽真空直到设定的处理压力。When depressurizing the furnace from atmospheric pressure to the set processing pressure, in order to decelerate and evacuate at first, close the
但是,在上述现有的热处理装置中,在配管13上连接旁通管60,并设置有第1和第2辅助阀61、62等,所以不仅要有宽距离Sa[参见图6(b)],且围绕配管13的结构烦杂,造成不易进行维修操作的问题。However, in the above-mentioned conventional heat treatment apparatus, the
此外,为使主阀18在规定位置固定,需要将主阀18的上流侧或下流侧的配管13借助于固定配件70固定在热处理装置的箱体14上,这使配管13周围的结构更加复杂。不仅如此,配管13在加温情况下,会从固定配件70散失热量,故有在配管13内产生副反应生成物的问题。In addition, in order to fix the
发明内容 Contents of the invention
本发明的目的是考虑到上述问题,令辅助阀和旁路与主阀一体化,紧凑地构成阀装置。本发明的另一目的是应用该紧凑的阀装置,使热处理装置的排气系统的配管周围的结构简化。An object of the present invention is to integrate the auxiliary valve and the bypass with the main valve in consideration of the above-mentioned problems, and to constitute a compact valve device. Another object of the present invention is to simplify the structure around the piping of the exhaust system of the heat treatment apparatus by applying the compact valve device.
为实现上述目的,本发明提供的热处理装置,包括热处理炉;与所述热处理炉连接且用于对上述热处理炉内进行排气的排气管;以及安装在上述排气管上的主阀,该主阀具有:形成有入口孔和出口孔以及与该入口孔和出口孔连通的主通路的阀壳、以及设置在所述阀壳上且开闭所述主通路的阀体,其特征在于,在上述主阀的阀壳上,并列地形成有与上述入口孔和出口孔连通的第1旁路和第2旁路;在上述主阀的阀壳上设置有可开闭所述第1旁路的第1辅助阀和开闭上述第2旁路的第2辅助阀。To achieve the above object, the heat treatment device provided by the present invention includes a heat treatment furnace; an exhaust pipe connected to the heat treatment furnace and used to exhaust the heat treatment furnace; and a main valve installed on the above exhaust pipe, The main valve has: a valve casing formed with an inlet hole and an outlet hole and a main passage communicating with the inlet hole and the outlet hole; and a valve body provided on the valve casing and opening and closing the main passage, characterized in that , On the valve casing of the above-mentioned main valve, a first bypass and a second bypass communicating with the above-mentioned inlet hole and the outlet hole are formed in parallel; The first auxiliary valve for the bypass and the second auxiliary valve for opening and closing the second bypass.
在优选实施方式中,上述第1旁路和第2旁路是在所述阀壳的壁体上形成的孔。In a preferred embodiment, the first bypass and the second bypass are holes formed in the wall of the valve casing.
再有,在优选实施方式中,所述第2辅助阀具有可调节流量的结构。Furthermore, in a preferred embodiment, the second auxiliary valve has a flow rate adjustable structure.
再有,在优选实施方式中,在所述主阀的阀壳上设有固定部件,借助该固定部件使所述主阀固定在该热处理装置的箱体上。Furthermore, in a preferred embodiment, a fixing part is provided on the valve casing of the main valve, and the main valve is fixed on the box body of the heat treatment device by means of the fixing part.
本发明的第二方面提供一种阀装置,其具有形成入口孔和出口孔、和与上述入口孔和出口孔连通的主通路的阀壳;以及设置在上述阀壳中且开闭所述主通路的阀体,其特征在于,还具有:形成在上述阀壳中,迂回于上述阀体并可与上述入口孔和出口孔连通的第1旁路;与上述第1旁路并列地形成在上述阀壳中,迂回于上述阀体并可与上述入口孔和出口孔连通的第2旁路;开闭所述第1旁路的第1辅助阀和开闭所述第2旁路的第2辅助阀。A second aspect of the present invention provides a valve device having a valve casing forming an inlet hole and an outlet hole, and a main passage communicating with the inlet hole and the outlet hole; The passage valve body is characterized in that it also has: a first bypass formed in the above-mentioned valve housing, bypassing the above-mentioned valve body and communicating with the above-mentioned inlet hole and outlet hole; and forming in parallel with the above-mentioned first bypass. In the above-mentioned valve casing, the second bypass bypasses the above-mentioned valve body and can communicate with the above-mentioned inlet hole and outlet hole; the first auxiliary valve for opening and closing the first bypass and the second bypass for opening and closing the second bypass 2 auxiliary valves.
本发明其他特征和优点请参照附图,并以下述实施方式来说明。Please refer to the attached drawings for other features and advantages of the present invention, and illustrate them with the following implementation manners.
附图说明 Description of drawings
图1为本发明热处理装置一实施方式的总体结构示意图。Fig. 1 is a schematic diagram of the overall structure of an embodiment of the heat treatment device of the present invention.
图2为图1所示主阀的立体图。Fig. 2 is a perspective view of the main valve shown in Fig. 1 .
图3为图2所示主阀的主要部位截面图。Fig. 3 is a sectional view of main parts of the main valve shown in Fig. 2 .
图4为图2所示第2辅助阀的断面放大图,即沿图3的IV-IV线的截面图。FIG. 4 is an enlarged sectional view of the second auxiliary valve shown in FIG. 2 , that is, a sectional view taken along line IV-IV in FIG. 3 .
图5为主阀周围部件配置图示,图5(a)为侧面图,图5(b)为平面图。Figure 5 is a diagram showing the arrangement of components around the main valve, Figure 5(a) is a side view, and Figure 5(b) is a plan view.
图6为现有技术的主阀周围部件配置图示,图6(a)为侧面图,图6(b)为平面图。Fig. 6 is a diagram showing the arrangement of components around the main valve in the prior art, Fig. 6(a) is a side view, and Fig. 6(b) is a plan view.
具体实施方式 Detailed ways
以下依据附图详述实施方式。Embodiments are described in detail below with reference to the accompanying drawings.
热处理装置总体结构示意如图1,符号1是容纳半导体基板W并进行规定的热处理例如CVD处理的热处理炉。在图示实施方式中,热处理炉1是批量式立式炉。热处理炉1设有石英制处理容器(反应管)2,和在处理容器2周围、绕处理容器2设置的圆筒状加热器3。The overall structure of the heat treatment device is schematically shown in Figure 1 , and
处理容器2在图示的实施方式中,具有内管2a和外管2b双层结构,但用一层管也可以,处理容器2下端开口。处理容器2下端气密地连接有圆环状集流腔6,该集流腔6具有向处理容器2中导入处理气体等气体的气体导入部4,和排出处理容器2内气体的排气部5。集流腔6的下端为开口的炉口7。在炉口7的下方,设有气密地封闭封闭炉口7的盖8。盖8通过升降机构9而升降,从而开闭炉口7。在盖8上,借助保温筒11载置有石英制的基板载置部件10(基板保持件),该基板载置部件10可在上下方向以预定间隔搭载多枚例如150枚半导体基板W。通过升降机构9,可将载置部件10在处理容器2内搬进、搬出。In the illustrated embodiment, the processing container 2 has a double-layer structure of an inner tube 2a and an outer tube 2b, but a single-layer tube may also be used, and the lower end of the processing container 2 is open. The lower end of the processing container 2 is airtightly connected with an
在气体导入部4上连接有与气体供给源连通但未图示的气体供给系统的配管,排气部5与排气系统12(也称排气管)的配管13连通。热处理炉1设置在热处理装置的箱体14内(参照图5)。在箱体14内设置具有可从下方插入处理容器2的开口的底板15。集流腔6借助装配配件(未图示)安装在底板15上,在底板15上设置加热器3。在底板15下方设置有作为装载和卸载基板载置部件10的操作区域的载荷区。Pipes of a gas supply system not shown in the figure are connected to the gas introduction part 4 and communicate with a gas supply source, and the
排气系统12的配管13,从箱体14内向箱体14外引出,下面连接减压泵17。在排气系统12的配管13上,从上流依次设有由角阀构成的主阀18、由蝶阀构成的压力控制阀19、以及捕集副生成物的捕集器20。排气系统12由配管13和配管13上设置的主阀18、压力控制阀19、减压泵17和捕集器20构成。The
下面参照图2~图4,详述主阀18及其附属机构。主阀18有阀壳21(阀本体),在阀壳21内部设置的阀体26。在阀壳21的侧面和下面分别设有可法兰连接的入口孔22和出口孔23。如图3所示,在阀壳21内形成与两个孔22、23连通的主通路24。在主通路24内设有阀座25,主阀18关闭时,阀体26落在阀座25上。Referring to Fig. 2 to Fig. 4, the
在阀壳21的上部设置有致动器28,其借助阀杆27使阀体26沿上下方向移动,并使主阀18开闭。阀杆27被波纹管29包围,波纹管29的上端与阀壳21连接,波纹管29的下端与阀体26的上面连接。波纹管29保护传动装置28不被腐蚀性气体腐蚀。An
主阀18的阀壳21上并列设有连通入口孔22和出口孔23、且彼此分离独立的第1旁路32和第2旁路33。该旁路32、33是在阀壳21的阀壁上形成的孔。在阀壳21的侧面,设有开闭第1旁路32的第1辅助阀30,以及开闭第2旁路33的第2辅助阀31。第1和第2旁路32、33可不让流体流过主通路24的阀座25和阀体26之间的部分,而使流体从入口孔22流向出口孔23。The
如图3所示,第1旁路32在其途中在阀壳21的侧面开口。第1旁路32开口端周围的阀壳21的侧面为阀座34。第1辅助阀30具有安装在阀壳21侧部的阀壳36,以及设在阀壳36内通过未图示的弹簧向闭阀方向(落在阀座34上的方向)压靠的阀体37。为使阀体37能在抵抗弹簧的弹力而驱动至开阀方向(从阀座离开的方向),在所述阀壳36上连通供给压缩空气的气压供给系统的配管38。第1辅助阀30的阀体37,在不供给气压时,靠在阀座34上,从而遮断第1旁路32,而在供给压缩空气时离开阀座34,使第1旁路32开通。As shown in FIG. 3 , the
如图4所示,第2旁路33,在其途中,在阀壳21的侧面有开口。第1旁路33开口端周围的阀壳21的侧面形成阀座35。第2辅助阀31,具有安装在阀壳21侧面的阀壳39,和设置在阀壳39内并通过弹簧40向闭阀方向(落在阀座35上的方向)压靠的阀体41。为使阀体41抵抗弹簧40的弹力,向开阀方向(离开阀座35的方向)驱动,在阀壳39上连接有供给压缩空气的气压供给系统的配管42。第2辅助阀31的阀体41,在无气压供给情况下,靠紧阀座35,遮断了第2旁路33,一旦供给压缩空气则从阀座35离开而开通第2旁路33。As shown in FIG. 4 , the
在阀体41中借助阀杆43连接有活塞44,此活塞44可滑动地嵌插于在阀壳39中形成的气缸45内。在气缸45内一端,内藏有使活塞44向着闭阀方向压靠的弹簧40,气缸45内的另一端,形成了通过压缩空气而向开阀方向驱动活塞44的压力室46。活塞44内形成可从空气压力供给系统的配管42将压缩空气导入上述压力室46的导入通路47。导入通路47沿活塞44轴线延长并在压力室46上开口。Connected to the
在第2辅助阀31的阀壳39的前端部,设有流量调节旋钮48。该流量调节旋钮48的内周面形成螺纹,与阀壳39的前端部外周面形成的阳螺纹部49螺合。流量调节旋钮48上设有限制活塞44移动范围(即阀体的提升量)d的套筒50。套筒50与活塞44同轴,在套筒50内嵌插有可滑动的、在活塞44的前端设置的轴部51。通过转动流量调节旋钮48,就能改变阀体41的提升量d,进而能调节流过第2旁路33的流体的流量。A flow
第2辅助阀31在可调节流量这一点,不同于流量固定类型的第1辅助阀30,也就是说,可通过除去第2辅助阀31的具有流量调节功能的部件而形成第1辅助阀30。The second
再次参照图1,在排气系统12的配管13的主阀18上流一侧,设有检测配管13内压力的压力传感元件52。压力传感元件52的检出信号被输入到控制器53。控制器53参照预先设定的控制程序进行主阀18、压力控制阀19和第1、第2辅助阀30、31的开闭控制,并调整排气系统12内和热处理炉1内的压力。Referring again to FIG. 1 , on the upstream side of the
主阀18的阀壳21上设有固定板54,借助该固定板54,主阀18的阀壳21被固定在装置的箱体14上。固定板54以比较适宜的固定部件例如螺栓55安装在主阀18的阀壳21上。在固定板54上设置有用于将该固定板54螺栓固定在适当的支撑部件上的孔56。例如,如图5所示,通过在热处理装置的箱体14上安装支撑架57,在该支撑架57上通过螺栓和螺母将固定板54固定,可使主阀18牢固地固定在热处理装置的箱体14上。The
下面对使热处理炉1内从大气压减压到规定处理压力时,热处理装置的作用进行说明。如进行急剧的减压(即大流量减压),则产生处理容器2内的反应副产物飞扬,且载置部件10上的半导体基板W错位的危险。因此,首先要关闭主阀18和第1辅助阀30,打开第2辅助阀31,驱动减压泵17,开始以微小流量抽真空(减速真空),此时的流量可以用流量调节旋钮48设定合适的值。热处理炉1内的气体,通过设在集流腔6的排气部5的排气管和排气系统12的配管13,进而通过主阀18的第2旁路33被排放。Next, the operation of the heat treatment apparatus when the inside of the
热处理炉1内达到规定的第1减压要求后,开启第1辅助阀30,通过第1和第2旁路32、33,增加流量进行抽真空操作。热处理炉1内达到规定的第2减压要求后,开启主阀18,通过第1和第2旁路32、33以及主阀18的主通路24进行大流量抽真空,直到作为目标的最终压力。After the
在上述实施方式中,因为将从主阀18旁通的通路组入主阀18的阀壳21,故不必相对于配管13另外设置旁路用配管。从而简化了排气系统12的管路系统,具有节省空间和维修方便的优点。关于节省空间请参照图5(b)的Sb和图6(b)中的Sa。此外,因第2辅助阀31具备流量调节功能,从而没有必要另外设置具有流量调节功能的阀,如针形阀。因此,使排气系统12的结构进一步简化。In the above-described embodiment, since the passage for bypassing the
此外,由于通过固定板54使主阀18的阀壳21被固定在装置的箱体14上,故没有必要再用固定配件固定主阀18前后的配管13。因此,配管13及其附近的结构可更简化。由于不使用配管13的固定配件,即使配管13是加温配管,热量也不会散失,同时能抑制配管13内的反应副产物。由此观点看,固定板54设置在离开阀壳21内的主通路24的位置处更优选。图示的实施方式中,固定板54接近地设置在离开主通路24的致动器28上。In addition, since the
以上是以图面详述本发明的实施方式,但不能用上述实施例限定本发明,可在不超出本发明权利要求范围内进行各种设计的变更。例如作为热处理炉不限定为立式,使用卧式也可;不限定为批量式,单片式也可。作为热处理,除了CVD之外,氧化、扩散、退火等也可。作为被处理体,除半导体基板之外,还可以是玻璃基板或LCD基板等。The embodiments of the present invention have been described in detail above with reference to the drawings, but the present invention cannot be limited by the above examples, and various design changes can be made within the scope of the claims of the present invention. For example, the heat treatment furnace is not limited to a vertical type, but a horizontal type may be used; it is not limited to a batch type, and a single-wafer type may be used. As heat treatment, oxidation, diffusion, annealing, etc. may be used other than CVD. The object to be processed may be a glass substrate, an LCD substrate, or the like in addition to a semiconductor substrate.
Claims (6)
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JP2001142881A JP3543963B2 (en) | 2001-05-14 | 2001-05-14 | Heat treatment equipment |
PCT/JP2002/011802 WO2004044969A1 (en) | 2001-05-14 | 2002-11-12 | Valve unit and heat treatment system |
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CN1602541A CN1602541A (en) | 2005-03-30 |
CN100397577C true CN100397577C (en) | 2008-06-25 |
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DE102006008346B4 (en) * | 2006-02-21 | 2008-06-19 | J. Eberspächer GmbH & Co. KG | Throttle arrangement and exhaust system equipped with it |
JP4816215B2 (en) * | 2006-04-14 | 2011-11-16 | 株式会社島津製作所 | Vacuum processing equipment |
JP4806615B2 (en) * | 2006-09-28 | 2011-11-02 | 株式会社アルバック | Exhaust device and exhaust method |
CN110600394B (en) * | 2018-06-12 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Exhaust system for semiconductor heat treatment equipment and semiconductor heat treatment equipment |
CN108825825B (en) * | 2018-06-29 | 2019-12-03 | 苏州超磁半导体科技有限公司 | A kind of mounting tool of vacuum seal disk |
Citations (5)
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---|---|---|---|---|
JPS6340664U (en) * | 1986-08-30 | 1988-03-16 | ||
JPH02134372U (en) * | 1989-04-11 | 1990-11-07 | ||
JPH04104318U (en) * | 1991-02-19 | 1992-09-08 | トキコ株式会社 | switching valve |
JPH06101782A (en) * | 1992-09-17 | 1994-04-12 | Ckd Corp | Opening/closing valve for vacuum exhaust which is equipped with bypass valve |
JP2000106347A (en) * | 1998-09-28 | 2000-04-11 | Tokyo Electron Ltd | Method and device for processing object |
-
2001
- 2001-05-14 JP JP2001142881A patent/JP3543963B2/en not_active Expired - Fee Related
-
2002
- 2002-11-12 WO PCT/JP2002/011802 patent/WO2004044969A1/en active Search and Examination
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6340664U (en) * | 1986-08-30 | 1988-03-16 | ||
JPH02134372U (en) * | 1989-04-11 | 1990-11-07 | ||
JPH04104318U (en) * | 1991-02-19 | 1992-09-08 | トキコ株式会社 | switching valve |
JPH06101782A (en) * | 1992-09-17 | 1994-04-12 | Ckd Corp | Opening/closing valve for vacuum exhaust which is equipped with bypass valve |
JP2000106347A (en) * | 1998-09-28 | 2000-04-11 | Tokyo Electron Ltd | Method and device for processing object |
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JP3543963B2 (en) | 2004-07-21 |
JP2002343781A (en) | 2002-11-29 |
CN1602541A (en) | 2005-03-30 |
WO2004044969A1 (en) | 2004-05-27 |
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