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CN100394592C - 一种键合金丝及其制造方法 - Google Patents

一种键合金丝及其制造方法 Download PDF

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CN100394592C
CN100394592C CNB2006100213732A CN200610021373A CN100394592C CN 100394592 C CN100394592 C CN 100394592C CN B2006100213732 A CNB2006100213732 A CN B2006100213732A CN 200610021373 A CN200610021373 A CN 200610021373A CN 100394592 C CN100394592 C CN 100394592C
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gold wire
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汪云林
凌强
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China Banknote Printing and Minting Group Co Ltd
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Abstract

本发明公开了一种键合金丝及其制造方法，属于连接半导体器件的材料技术领域，该键合金丝的成分和含量(重量百分比)为：99.99%≤黄金＜100%，0.00008%≤铍≤0.005%，0.00008%≤钐≤0.005%；该键合金丝的制造方法是将满足所述配比的成分加入真空炉，熔铸成真空铸锭，冷却后开炉，取锭；本发明由于在含黄金99.99%以上的键合金丝中加入了微量元素铍、钐，提高了键合金丝的抗拉强度和伸长率，特别适合于半导体行业对超细金丝的使用。

Description

一种键合金丝及其制造方法
技术领域
本发明涉及一种用于连接半导体器件的键合金丝及其制造方法
背景技术
键合金丝是集成电路芯片(IC)和半导体分立器件(二极管、三极管)制造过程中必不可少的基础材料之一，主要作为封装用内引线。芯片是微电子工业的心脏，随着科学技术的发展，芯片的种类越来越多，用量越来越大，相应的键合金丝的用量也日渐增大。超细金丝的直径最细只有8微米，对应的拉断力最小只有1.5克。金丝的生产是用拉丝机不断拉细，在拉细过程中细丝会出现加工硬化，使拉丝困难，特别是直径30微米以下的金丝，容易拉断，形成废品。使用过程中也容易断裂。同时国家标准GB/T8750-1997半导体器件键合金丝规定含金不小于99.99％。
发明内容
本发明的目的在于：提供一种满足国家标准即含金量大于99.99％，同时具备很好的强度和伸长率的键合金丝。本发明的另一目的在于：提供一种该键合金丝的制造方法。
本发明的技术方案是：一种键合金丝，其成分和含量(重量百分比)如下：
99.99％≤黄金＜100％，
0.00008％≤铍≤0.005％，
0.00008％≤钐≤0.005％，
该键合金丝还含有至少一种下述含量的成分：
0.00008％≤钙≤0.005％，
0.00008％≤镁≤0.005％，
0.00008％≤钇≤0.005％，
0.00008％≤钆≤0.005％，
0.00008％≤钒≤0.005％，
0.00008％≤镍≤0.005％，
0.00008％≤银≤0.005％，
0.00008％≤铈≤0.005％，
0.00008％≤钯≤0.005％，
所述键合金丝的制造方法，主要有如下步骤：
真空熔铸，采用50Pa以下的真空度，使配入元素难以于氧气反应，从而顺利熔入金基体，铸造成直径10-20毫米的真空棒锭；铸锭用拉丝机拉成细丝。
在真空炉熔铸后，铸锭可以再使用小型连铸机铸造，铸成直径5-10毫米的连续锭，形成组织更好，更易发挥产品塑性的连铸组织结构。
在直径60微米以下的细丝拉拔时使用连续退火炉加热。
下面对本发明进行详细说明：
本发明的目的是通过在大于99.99％高纯度黄金中加入微量元素实现，即不仅含有99.99％以上的黄金，还含有微量的铍、钐，铍可以提高金丝的常温下的抗拉强度、减轻金丝表面缺陷；钐可提高常温和高温下的抗拉强度，提高耐热性。另外本发明的键合金丝还可含有钙、镁、钇、钆、钒、镍、银、铈和钯9种元素中的至少1种。
在上述元素中，钇熔点1522℃，钒的熔点为1890℃，需要高温熔化。而镁的沸点为1170度、钙的沸点为1484度，稍加热即会氧化和挥发，在熔化前已全部烧损掉，很难加入。为保证易氧化、易挥发元素的加入，使用真空炉熔化，抽真空到50Pa以下，再加热熔化。在炉内浇铸成普通立模铸锭。铸锭冷却后，向炉内充入空气至大气压力，开炉，取锭。
真空炉熔铸可有效保证元素的加入，但其结晶组织还不够好。连续铸锭具有单向生长连续柱状晶组织，其冷加工能力非常优异。因此对真空铸锭，再采用连铸法进行铸造，使铸出的连铸锭性能更好。由于各添加元素已充分熔入黄金，且总含量不超过0.01％，再在空气中熔化时已不会氧化和挥发。
直径60微米以下的细丝使用连续退火炉加热，以减少或消除加工硬化，同时防止了普通退火方式造成丝粘连的问题，使细丝的拉拔能顺利进行。细丝绕在轴上加热，有时外层丝已经粘连，内层丝还是硬态，造成整轴丝报废。
本发明的有益效果是：由于在含黄金99.99％以上的键合金丝中加入了微量元素铍、钐，提高了键合金丝的抗拉强度和伸长率，特别适合于半导体行业对超细金丝的使用。另外本发明的键合金丝还可含有钙、镁、钇、钆、钒、镍、银、铈和钯9种元素中的至少1种，以提高键合金丝的性能。
附图说明
图1是表1所述键合金丝的力-伸长曲线；
图2是表2所述键合金丝的力-伸长曲线；
其中，附图中曲线上的数字分别表示试样号，有的数字重合在一起。
具体实施方式
实施例1
一种键合金丝，其成分和含量(重量百分比)如下：
黄金  99.994％，
铍    0.002％，
钐    0.0015％，
钙    0.0008％，
钇    0.0006％，
钆    0.0006％，
铈    0.0005％，
所述键合金丝的制造方法，主要有如下步骤：
真空熔铸，真空度40Pa以下的真空度，使配入元素难以于氧气反应，从而顺利熔入金基体，铸造成真空棒锭。
为了进一步提高产品性能，本发明还采用连续铸锭法，即在真空炉熔铸后，使用小型连铸机铸造。连铸法生产铸锭是一种先进的生产方法，与立模铸造相比，有以下优点：连续铸锭没有锭头，没有抽心，成品率高。铸锭表面在结晶过程中与结晶器有相对运动，这使得铸造面光滑，没有塌坑、夹渣、麻面等缺陷，铸锭加工前不需要刨面。连续铸锭结晶组织好，可以减少热开坯工序。连续铸锭的铸模表面不需要涂炭粉进行保护，可减少黑点缺陷。具有单向生长连续柱状晶组织的连铸坯冷加工能力非常优异。
但普通的连铸方式和设备主要用于普通有色金属和黑色金属的生产，设备大、生产能力大、投料量大，不适合黄金的熔铸。本发明采用的是立式连铸技术，用高纯石墨制作整体式坩埚和结晶器，感应线圈加热，其结构小巧。
拉丝，拉到成品直径，拉丝中间道次进行退火。粗丝可用箱式炉退火，当直径60微米以下时，改用连续退火炉进行中间退火。成品如需要软态，则也采用连续退火炉退火，加热温度300-450度，收放线速度根据丝直径确定。具体温度和时间根据丝直径确定，粗丝采用高温低速加热，以保证加热充分和均匀。
下面通过试验数据对本发明的有益效果进行说明：
表1是根据本实施例所述的键合金丝的成分及含量及其制造方法生产的直径25微米的金丝(软态)的拉力试验结果。
表1
  试样号   试样直径   最大力   抗拉强度   断时总伸长率
  d(mm)   Fb(N)   σb(MPa)   δt(％)
  1   0.025   0.103   210.3   11.03
  2   0.025   0.103   210.6   10.24
  3   0.025   0.103   210.1   10.32
  4   0.025   0.104   210.8   11.88
  5   0.025   0.102   208.7   10.59
  6   0.025   0.103   209.2   11.13
  平均值   0.025   0.103   210.0   10.87
  中值   0.025   0.103   210.1   10.77
表2是直接使用普通99.99％金料生产的直径30微米金丝(半硬态)的拉力试验结果。
表2
  试样号   试样直径   最大力   抗拉强度   断时总伸长率
  d(mm)   Fb(N)   σb(MPa)   δt(％)
  1   0.030   0.079   111.3   0.96
  2   0.030   0.082   116.2   1.32
  3   0.030   0.082   115.7   1.30
  4   0.030   0.080   113.7   1.23
  5   0.030   0.084   118.5   1.31
  6   0.030   0.083   117.4   1.29
  平均值   0.030   0.082   115.5   1.23
  中值   0.030   0.082   115.8   1.28
从表上可以看出，本发明生产的金丝抗拉强度是普通金丝的1.82倍，延伸率是普通金丝的8.84倍。用直径25微米的本发明金丝，代替30微米的普通金丝，力学指标还有富余，而使用同样的长度，用金量减少了30％。
实施例2
一种键合金丝，其成分和含量(重量百分比)如下：
黄金  99.995％，
铍    0.001％，
钐    0.001％，
钙    0.0005％，
镁    0.0004％，
钇    0.0004％，
钆    0.0003％，
钒    0.0003％，
镍    0.0003％，
银    0.0003％，
铈    0.0003％，
钯    0.0002％，
制造所述键合金丝的方法，主要有如下步骤：
真空熔铸，采用35Pa的真空度，加热熔化，铸造直径20毫米的真空棒锭；在真空炉熔铸后，铸锭再使用小型连铸机铸造，铸成直径8毫米的连续锭，形成组织更好，更易发挥产品塑性的连铸组织结构；铸锭用拉丝机拉成细丝；在直径60微米以下的细丝拉拔时使用连续退火炉加热。
实施例3
一种键合金丝，其成分和含量(重量百分比)如下：
黄金  99.997％，
铍    0.0005％，
钐    0.0007％，
钙    0.0004％，
镁    0.0004％，
钇    0.0003％，
钆    0.0005％，
钒    0.0002％，
所述键合金丝的制造方法，主要有如下步骤：
真空熔铸，采用35Pa的真空度，加热熔化，铸造直径20毫米的真空棒锭；铸锭用拉丝机拉成细丝。在直径60微米以下的细丝拉拔时使用连续退火炉加热。

Claims (4)

1.一种键合金丝，该键合金丝的成分和含量(重量百分比)如下：
99.99％≤黄金＜100％，
0.00008％≤铍≤0.005％，
0.00008％≤钐≤0.005％；
其特征在于：该键合金丝还含有至少一种下述含量的成分：
0.00008％≤钙≤0.005％，
0.00008％≤镁≤0.005％，
0.00008％≤钇≤0.005％，
0.00008％≤钆≤0.005％，
0.00008％≤钒≤0.005％，
0.00008％≤镍≤0.005％，
0.00008％≤银≤0.005％，
0.00008％≤铈≤0.005％，
0.00008％≤钯≤0.005％。
2.一种制造权利要求1所述键合金丝的方法，其特征在于：使用真空炉熔铸，使各非金元素在缺氧条件下熔入金基体，并在炉内浇铸成真空铸锭；用拉丝机将铸锭拉成细丝。
3.根据权利要求2所述键合金丝的制造方法，其特征在于：真空炉熔铸后，使用小型连铸机铸造。
4.根据权利要求2所述键合金丝的制造方法，其特征在于：直径60微米以下的细丝拉拔时使用连续退火炉加热。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290835A (ja) * 1986-06-09 1987-12-17 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用Ａｕ合金極細線
JPH02250934A (ja) * 1989-03-24 1990-10-08 Mitsubishi Metal Corp 半導体素子ボンディング用Ａｕ合金極細線
JPH03257129A (ja) * 1990-03-06 1991-11-15 Mitsubishi Materials Corp 半導体装置のボンディング用金合金線

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290835A (ja) * 1986-06-09 1987-12-17 Mitsubishi Metal Corp 半導体装置のボンデイングワイヤ用Ａｕ合金極細線
JPH02250934A (ja) * 1989-03-24 1990-10-08 Mitsubishi Metal Corp 半導体素子ボンディング用Ａｕ合金極細線
JPH03257129A (ja) * 1990-03-06 1991-11-15 Mitsubishi Materials Corp 半導体装置のボンディング用金合金線

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
作为晶体管和集成电路焊线用的金丝之技术发展. 福井康夫.贵金属，第6卷第1期. 1985
作为晶体管和集成电路焊线用的金丝之技术发展. 福井康夫.贵金属，第6卷第1期. 1985 *
国外超细金丝的生产技术. 周新铭，李自新.贵金属，第10卷第2期. 1989
国外超细金丝的生产技术. 周新铭，李自新.贵金属，第10卷第2期. 1989 *

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