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CN100387396C - Sliding-vane detecting method for chemical-mechanical grinder platform - Google Patents

Sliding-vane detecting method for chemical-mechanical grinder platform Download PDF

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Publication number
CN100387396C
CN100387396C CNB2004100174141A CN200410017414A CN100387396C CN 100387396 C CN100387396 C CN 100387396C CN B2004100174141 A CNB2004100174141 A CN B2004100174141A CN 200410017414 A CN200410017414 A CN 200410017414A CN 100387396 C CN100387396 C CN 100387396C
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China
Prior art keywords
silicon chip
grinding
slide plate
work
present
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Expired - Fee Related
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CNB2004100174141A
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Chinese (zh)
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CN1676276A (en
Inventor
黄文忠
江志峰
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Publication of CN1676276A publication Critical patent/CN1676276A/en
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  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

The present invention provides a method for detecting sliding blades of silicon wafer machine tables. The present invention makes use of an original end point detection device and does not need more facility cost consumption, and the present invention can effectively detect sliding blade states and prevent sliding blade breaking. The present invention makes use of an optical detection system arranged in a CMP machine table to continuously detect the reflectivity of chip surfaces, and a light source irradiates from the inner part until the lower surface of a grinding pad. Therefore, the present invention can avoid poor detection effects caused by scattering and is suitable for various types of grinding pads. The present invention can immediately reflect wafer slide-out fact via analyzing reflectance data curves and can effectively prevent silicon wafer breaking and save cost with the immediate upward lifting matched with silicon wafer carriers.

Description

Work-table of chemicomechanical grinding mill slide plate detection method
Technical field
The present invention relates to a kind of method that detects board chip slide plate, particularly a kind of slide plate detection method that is applied to work-table of chemicomechanical grinding mill.
Background technology
In semiconductor technology, cmp (Chemical Mechanical Polishing, CMP) be a necessary step, mainly due to presenting when silicon chip table sheet when concavo-convex up and down, can make the degree of difficulty at subsequent technique such as thin film deposition, photoetching or dried quarter etc. increase, therefore must make silicon chip surface reach comprehensive planarization by CMP.
In CMP technology, because silicon chip only utilizes a silicon chip carrier to draw, mat reaches the purpose that has an even surface with mutual friction mutually between grinding pad under rotation at a high speed, therefore normal generation silicon chip breaks away from the situation of silicon chip carrier unusually because of board, that is slide plate, and because the active force of rotation at a high speed, the normal collision of the silicon chip behind the slide plate and breakage can't be used with board, this is for the silicon chip that involves great expense, and one loses greatly on cost.
Situation for prevention silicon chip slide plate in process of lapping, semiconductor manufacturer ties up to the state that silicon chip carrier side device one optical sensor (Wafer slip out sensor) is come monitoring wafer, when silicon chip light source on the meeting block induced device when the silicon chip carrier skids off by optical sensor, inductor just sends signal notice board to be stopped all and does, and will carry on silicon chip carrier and the grinding pad cleaner and playback, with avoid chip and collision and cause breakage.Yet such device is only applicable to the grinding pad of IC formula at present, grinding pad for the Politex formula is also inapplicable, its surface of grinding pad mainly due to the Politex formula is a black, can produce the effect of scattering for light source, making utilizes the such mechanism of optical sensor to play a role, when therefore on Politex formula grinding pad, operating,, cause damage as long as the situation that the slide plate silicon chip necessarily has fragmentation takes place.
For solving the above problems; the present invention utilizes and avoids the endpoint detection system of overmastication to come detecting mechanism as the silicon chip slide plate in order to the detecting milling time in the CMP technology; utilize the endpoint detection system of same daylighting principle detecting; detect the silicon chip slide plate; except that equipment does not need extra installing again; its operating and controlling interface also can be identical; no matter the grinding pad that is IC formula or Politex formula all is suitable for; as long as when detecting unusual condition, cooperate to grind carrier immediately on lift and shut down the effect that caution can effectively reach prevention silicon chip fragmentation.
Summary of the invention
Main purpose of the present invention provides a kind of method that detects board chip slide plate, all can effectively carry out the detecting of silicon chip slide plate for various types of grinding pads.
Another object of the present invention provides a kind of detection method that does not need additionally to install additional the board chip slide plate of equipment, utilizes the situation that the detecting system of endpoint detection system can effective detection chip slide plate.
A further object of the present invention provides a kind of silicon chip slide plate detecting method that reduces production costs, and it can effectively prevent the silicon chip fragmentation and not need installing equipment additional, and silicon chip can be recycled, thereby reaches the purpose of saving production cost.
For achieving the above object, the present invention utilizes the existing CMP board that is equipped with endpoint detection system, utilize its reflectivity of detecting silicon chip surface continuously with foundation as the decision grinding endpoint, can obtain a continuous silicon chip reflectance data, when silicon chip generation slide plate, can't record the reflectivity of silicon chip surface again, the data that makes produces sharply and changes, can be as the foundation of judging the silicon chip slide plate, cooperate board to stop every operation immediately and the silicon chip carrier is lifted immediately this moment, can avoid silicon chip to skid off the situation that produces fragmentation because of collision silicon chip carrier.
Description of drawings
Fig. 1 is a schematic flow sheet of the present invention.
Fig. 2 is a section of structure of the present invention.
Fig. 3 is a structure vertical view of the present invention.
Label declaration:
10 cmps (CMP) board
12 grinding pads
14 measurement window
16 grinding silicon chips
18 silicon chip carriers
20 lapping liquids
22 rotational trajectories
24 smooth detecting systems
26 light sources
28 optical receivers
30 transmit optical fiber
32 plane of refraction
The specific embodiment
Further specify feature of the present invention and beneficial effect thereof below in conjunction with drawings and Examples.
The present invention is a kind of method that detects silicon chip board slide plate, utilize the endpoint detecting device that originally just has, and its optical detection system is located at CMP board inside, make light source can be incident to the lower surface of grinding pad internally, effectively detect, do not take place, be not only applicable to all types of grinding pads and do not have because of scattering causes the not good situation of detection performance, and can effectively detect the silicon chip slide plate and produce, take appropriate measures to prevent the silicon chip fragmentation.
Fig. 1 is implementing procedure figure of the present invention, at first shown in step S10, provides a CMP board, comprises on the described board which is provided with a grinding silicon chip by the grinding pad with a measurement window, and has an optical detection system to be located in the board.The design of the device of board integral body can be simultaneously referring to the structure schematic top plan view of structural profile schematic diagram and Fig. 3 of Fig. 2 board, because the present invention mainly uses the endpoint detection system that the CMP board all has, therefore as shown in the figure, CMP board 10 is provided with a grinding pad 12, one measurement window 14 is arranged on grinding pad 12, and a grinding silicon chip 16 is positioned on the grinding pad 12, utilize a silicon chip carrier 18 fixing in addition, grinding silicon chip 16 is coated with lapping liquid 20 with the contact-making surface of grinding pad 12, on the rotational trajectory 22 with respect to grinding pad 12 when the position of measurement window 14 is positioned at grinding silicon chip 16 grindings, other has an optical detection system 24 to be located at board inside, optical detection system 24 comprises a light source 26 and an optical receiver 28 at least, also viewable design has at least one transmission optical fiber 30 in addition, in order to transmit emitted light of light source 26 and the light that is reflected from grinding silicon chip 16 lower surfaces, one plane of refraction 32, in order to refract light source 26 emitted light to measurement window 14.Continue and carry out step S12, utilize optical detection system 24 to measure and write down the surface reflectivity of grinding silicon chip 16, to set up a reflectance data.In setting up the reflectance data process, utilize light source 26 penetrate a light beam via the refraction of plane of refraction 32 after light beam is incident to the lower surface of described grinding silicon chip 16 by measurement window 14, and the light that reflects through silicon chip 16 surfaces turns back through measurement window 14 equally and utilizes optical receiver 28 to receive carrying out the record of reflectivity, and is can be by transmitting optical fiber 30 as media in the light conductive process.In CMP technology, originally just utilized the foundation of reflectivity as milling time, avoid overmastication, and utilize same endpoint detecting equipment and system, also can detect the silicon chip slide plate, when CMP technology is carried out, grinding pad 12 is to belong to the state that runs up, for example working as rotating speed is 102rpm, it whenever turned around only about 0.588 second, because the position of measurement window 14 is positioned on the rotational trajectory 22 of grinding silicon chip 16 with respect to grinding pad 12, grinding pad 12 whenever turns around, optical detection system 24 can be measured once, therefore can be considered continuous detecting.In continuous measurement and write down under the silicon chip surface reflectivity, continue and carry out step S14, according to the reflectance data curve of gained as silicon chip slide plate basis for estimation, when silicon chip 16 skids off, because silicon chip 16 and water or the existing attraction of lapping liquid, make the surface that still is close to grinding pad 12 when silicon chip 16 skids off, but this time detecting system 24 has skidded off because of silicon chip 16, therefore light source 26 emitted light beams can't arrive the lower surface and the reflection of silicon chip 16, so that optical receiving set 28 can't receive reflection ray, reflectivity sharply descends, and gets final product the fact that the real time reaction silicon chip skids off by such mechanism.When the reflectivity data curve presents rapid decline, represent that promptly silicon chip 16 has skidded off, carry out step S16 immediately, carrying out a silicon chip slide plate handles, stop CMP board 10 every operations, and will lift and send caution on the silicon chip carrier 18 simultaneously, to avoid silicon chip 16 damaged because of collision silicon chip carrier 18, cause damage,, be not rapid decline and present a straight line if the reflectance data curve descends for gentle, the operation of promptly representing system is normal, then, proceed the action repeating step S12 of albedo measurement, until till the process of lapping end as step S18.
The endpoint detection system that the present invention utilizes script CMP board to be had, in order to detecting silicon chip slide plate, do not need to expend equipment cost more more, and applicable all types of grinding pad, effectively detect the slide plate situation and prevent that the fragmentation situation from producing, and can be widely used in the CMP technology of the normal slide plate situation that takes place.
Above-described embodiment is only in order to illustrate technological thought of the present invention and characteristics; its purpose is to make those of ordinary skill in the art can understand content of the present invention and implements according to this; the scope of this patent also not only is confined to above-mentioned specific embodiment; be all equal variation or modifications of doing according to disclosed spirit, still be encompassed in protection scope of the present invention.

Claims (6)

1. work-table of chemicomechanical grinding mill slide plate detection method is characterized in that may further comprise the steps:
One work-table of chemicomechanical grinding mill is provided, described work-table of chemicomechanical grinding mill comprises the grinding pad of a measurement window, be provided with a grinding silicon chip thereon, and there is an optical detection system to be located at described work-table of chemicomechanical grinding mill inside, wherein, be positioned on the rotational trajectory of described grinding silicon chip at described grinding pad in the measurement window that described grinding pad had;
One light source is incident to described grinding silicon chip surface by described measurement window;
Described optical detection system receives light that is reflected on described grinding silicon chip surface and the surface reflectivity that writes down described grinding silicon chip, to set up a reflectance data; And
Judge the state of described grinding silicon chip according to described reflectance data,, continue to set up described reflectance data when described reflectance data curve sharply descends and in line the time, carries out a silicon chip slide plate and handle, otherwise then be the normal operation state.
2. the work-table of chemicomechanical grinding mill slide plate detection method of stating according to claim 1 is characterized in that: utilize at least one transmission optical fiber, the light that is reflected in order to the light beam that transmits described light source and described grinding silicon chip surface.
3. work-table of chemicomechanical grinding mill slide plate detection method according to claim 1 is characterized in that: utilize at least one plane of refraction, the energy that makes in order to the light beam that reflects described light source arrives described grinding silicon chip surface by described measurement window.
4. work-table of chemicomechanical grinding mill slide plate detection method according to claim 1 is characterized in that: described silicon chip slide plate is treated to the operation that stops described work-table of chemicomechanical grinding mill, will lift and send caution on the described silicon chip carrier simultaneously.
5. work-table of chemicomechanical grinding mill slide plate detection method according to claim 1 is characterized in that: described grinding pad is an IC type grinding pad.
6. work-table of chemicomechanical grinding mill slide plate detection method according to claim 1 is characterized in that: described grinding pad is a Politex type grinding pad.
CNB2004100174141A 2004-04-01 2004-04-01 Sliding-vane detecting method for chemical-mechanical grinder platform Expired - Fee Related CN100387396C (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220126418A1 (en) * 2020-10-26 2022-04-28 Illinois Tool Works Inc. Grinding/polishing systems and methods having proximity sensors

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102810492B (en) * 2011-06-03 2015-08-05 中国科学院微电子研究所 Process monitoring method after metal gate CMP
JP6141814B2 (en) * 2014-10-30 2017-06-07 信越半導体株式会社 Polishing equipment
CN106425828A (en) * 2016-09-27 2017-02-22 天津华海清科机电科技有限公司 CMP equipment polishing head chip falling detection method and system
CN114446814A (en) * 2022-02-09 2022-05-06 北京烁科精微电子装备有限公司 A kind of detection method of wafer slide

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1524239A (en) * 1976-12-10 1978-09-06 British Steel Corp Surface strain by reflectivity
US4725826A (en) * 1987-01-16 1988-02-16 Hunter Bryan D Manipulator grip slip sensor
US5985678A (en) * 1996-03-25 1999-11-16 Sumitomo Electric Industries, Ltd. Method of evaluating and thermally processing semiconductor wafer
JP2001015567A (en) * 1999-06-29 2001-01-19 Toshiba Microelectronics Corp Device and method for evaluating semiconductor substrate
JP2001124538A (en) * 1999-10-27 2001-05-11 Komatsu Electronic Metals Co Ltd Method and device for detecting defect in surface of object
US6386947B2 (en) * 2000-02-29 2002-05-14 Applied Materials, Inc. Method and apparatus for detecting wafer slipouts
US6541747B1 (en) * 1999-09-14 2003-04-01 Sony Corporation Focal mechanism and method for controlling focal point position, and apparatus and method for inspecting semiconductor wafer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1524239A (en) * 1976-12-10 1978-09-06 British Steel Corp Surface strain by reflectivity
US4725826A (en) * 1987-01-16 1988-02-16 Hunter Bryan D Manipulator grip slip sensor
US5985678A (en) * 1996-03-25 1999-11-16 Sumitomo Electric Industries, Ltd. Method of evaluating and thermally processing semiconductor wafer
JP2001015567A (en) * 1999-06-29 2001-01-19 Toshiba Microelectronics Corp Device and method for evaluating semiconductor substrate
US6541747B1 (en) * 1999-09-14 2003-04-01 Sony Corporation Focal mechanism and method for controlling focal point position, and apparatus and method for inspecting semiconductor wafer
JP2001124538A (en) * 1999-10-27 2001-05-11 Komatsu Electronic Metals Co Ltd Method and device for detecting defect in surface of object
US6386947B2 (en) * 2000-02-29 2002-05-14 Applied Materials, Inc. Method and apparatus for detecting wafer slipouts

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
GB,A,1524239 1978.09.06
JP,A,2001015567 2001.01.19
JP,A,2001124538 2001.05.11
US,A,4725826 1988.02.16
US,A,5985678 1999.11.16
US,B,6386947 2002.05.14
US,B,6541747 2003.04.01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220126418A1 (en) * 2020-10-26 2022-04-28 Illinois Tool Works Inc. Grinding/polishing systems and methods having proximity sensors

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