[go: up one dir, main page]

CN100384584C - Method for manufacturing heat radiation structure of light emitting diode - Google Patents

Method for manufacturing heat radiation structure of light emitting diode Download PDF

Info

Publication number
CN100384584C
CN100384584C CNB2004101016516A CN200410101651A CN100384584C CN 100384584 C CN100384584 C CN 100384584C CN B2004101016516 A CNB2004101016516 A CN B2004101016516A CN 200410101651 A CN200410101651 A CN 200410101651A CN 100384584 C CN100384584 C CN 100384584C
Authority
CN
China
Prior art keywords
emitting diode
light emitting
base material
heat elimination
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004101016516A
Other languages
Chinese (zh)
Other versions
CN1796041A (en
Inventor
洪明山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CNB2004101016516A priority Critical patent/CN100384584C/en
Publication of CN1796041A publication Critical patent/CN1796041A/en
Application granted granted Critical
Publication of CN100384584C publication Critical patent/CN100384584C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

A method for manufacturing a heat dissipation structure of a light emitting diode comprises the following steps: providing a thin base material which is continuously conveyed; stamping the thin base material by a stamping mechanism to form a continuous foot rest with a cathode body and an anode body; after the foot rest is formed by punching, uncut waste materials exist between the cathode main bodies, and the uncut thin waste materials on the cathode main bodies are extruded by an extrusion mechanism to form a heat dissipation structure which has a certain thickness and can be integrated with the cathode main bodies.

Description

发光二极管的散热结构制作方法 Manufacturing method of heat dissipation structure of light emitting diode

技术领域 technical field

本发明涉及一种发光二极管的散热结构制作方法,尤其涉及一种利用挤压方式,将发光二极管的阴极主体上未被裁切的废料进行挤压,形成与阴极主体一体的散热结构的制作方法。The invention relates to a method for manufacturing a heat dissipation structure of a light-emitting diode, in particular to a method for making a heat dissipation structure integrated with the cathode body by extruding uncut waste materials on the cathode body of the light-emitting diode by means of extrusion .

背景技术 Background technique

目前,发光二极管已广泛被应用在照明设备上,发光二极管也被制作成具有高效率、高功率及高亮度等特性的产品。因此,高效率、高功率及高亮度的发光二极管在使用时,相对会产生极高的热量,因此本领域技术人员在制作发光二极管的脚架时,均会在脚架上成形散热结构,可以将发光二极管所产生的热量散去,以确保发光二极管的使用寿命。而传统发光二极管在脚架成型时,同时在脚架的阴极主体承载芯片的承载部的两翼上成型有散热结构,由于该散热结构体积小,厚度薄,因此导致热传导效率不佳,造成散热效果不佳,让发光二极管使用寿命减短。因此,有本领域技术人员为了改进发光二极管的散热结构问题,利用厚的金属基材,通过蚀刻或微影的加工方法,将阴极、阳极主体的接脚处蚀刻或微影成薄形,让阴极主体所承载芯片的区域保持原有厚度,以形成散热结构。另一种则是直接在脚架冲压成型后,在脚架的阴极主体承载芯片的承载部上焊接具有一厚度的散热结构,以形成阴极主体的散热结构。虽然,这种具有一定厚度的散热结构虽然具有高效率的热传效果,可让发光二极管所产生的热量快速散去,确保发光二极体的使用寿命。但是,这两种厚形的散热结构在制作上较费工时、工序,且也不易制作,相对也造成制作成本的增加。At present, light-emitting diodes have been widely used in lighting equipment, and light-emitting diodes have also been manufactured into products with characteristics such as high efficiency, high power, and high brightness. Therefore, high-efficiency, high-power and high-brightness light-emitting diodes will relatively generate extremely high heat when they are used. Therefore, when making the tripod of the light-emitting diode, those skilled in the art will form a heat dissipation structure on the tripod, which can Dissipate the heat generated by the light emitting diodes to ensure the service life of the light emitting diodes. However, when the traditional light-emitting diode is formed on the tripod, a heat dissipation structure is formed on the two wings of the cathode main body of the tripod to carry the chip at the same time. Because the heat dissipation structure is small in size and thin in thickness, the heat conduction efficiency is not good and the heat dissipation effect is caused. If it is not good, the service life of the light-emitting diode will be shortened. Therefore, in order to improve the heat dissipation structure of light-emitting diodes, those skilled in the art use thick metal substrates to etch or lithography the pins of the cathode and anode bodies into thin shapes, so that The area where the chip is carried by the cathode main body maintains the original thickness to form a heat dissipation structure. The other is to weld a heat dissipation structure with a thickness on the supporting part of the cathode main body of the footstand that carries the chip directly after the footstand is stamped and formed, so as to form the heat dissipation structure of the cathode main body. Although this heat dissipation structure with a certain thickness has a high-efficiency heat transfer effect, it can quickly dissipate the heat generated by the light-emitting diodes and ensure the service life of the light-emitting diodes. However, these two thick heat dissipation structures are time-consuming and difficult to manufacture, which relatively increases the manufacturing cost.

本发明内容Contents of the invention

本发明的主要目的在于解决上述现有技术中存在的缺陷。本发明利用挤压方式,将薄型金属基材挤压形成具有一定厚度,且可与发光二极的阴极主体形成一体的散热结构,除了具有较佳的热传导特性外,还可以节省材料,大幅度降低制作成,让发光二极管的散热结构更容易制作。The main purpose of the present invention is to solve the above-mentioned defects in the prior art. The invention utilizes an extrusion method to extrude a thin metal base material to form a heat dissipation structure with a certain thickness and can be integrated with the cathode body of the light-emitting diode. In addition to having better heat conduction characteristics, it can also save materials and greatly The manufacturing cost is reduced, and the heat dissipation structure of the light-emitting diode is easier to manufacture.

为了实现上述目的,本发明的发光二极管的散热结构制作方法,提供一连续性输送的薄型基材;将该薄型基材利用冲压机构冲压形成具有一连续性且具阴极、阳极主体的脚架;在该脚架冲压成形后,该阴极主体间存再有未被裁切废料,再将该阴极主体上未被裁切的薄型废料利用挤压机构进行挤压,将该薄型废料挤压成具有一定厚度且可与阴极主体形成一体的散热结构。In order to achieve the above object, the manufacturing method of the heat dissipation structure of the light-emitting diode of the present invention provides a thin base material that is continuously transported; the thin base material is stamped by a stamping mechanism to form a tripod that has a continuity and has a cathode and an anode body; After the tripod is stamped and formed, there are uncut waste materials between the cathode main body, and then the uncut thin waste materials on the cathode main body are extruded by an extrusion mechanism, and the thin waste materials are extruded into a A heat dissipation structure that has a certain thickness and can be integrated with the cathode body.

本发明所述的方法能够使发光二极具有较佳的散热效果,还可以节省材料,大幅度降低制作成,让发光二极管的散热结构更容易制作。The method of the invention can make the light-emitting diode have a better heat dissipation effect, can also save materials, greatly reduce the manufacturing cost, and make the heat dissipation structure of the light-emitting diode easier to manufacture.

附图的简要说明Brief description of the drawings

图1为本发明的单一片体的基材示意图;Fig. 1 is a schematic diagram of a substrate of a single sheet of the present invention;

图2为本发明的基材冲压后的脚架示意图;Fig. 2 is a schematic diagram of the tripod after stamping of the base material of the present invention;

图3、图4、图5为图2在3-3位置断面剖视基材废料挤压过程示意图;Fig. 3, Fig. 4 and Fig. 5 are the schematic diagrams of the extruding process of the base material waste in the cross section of Fig. 2 at position 3-3;

图6为本发明的基材废料挤压完成形成散热结构示意图;Fig. 6 is a schematic diagram of a heat dissipation structure formed by extruding base material waste in the present invention;

图7为本发明的发光二极管剖视示意图;7 is a schematic cross-sectional view of a light emitting diode of the present invention;

图8为本发明的发光二极管另一剖视示意图。FIG. 8 is another schematic cross-sectional view of the light emitting diode of the present invention.

附图中,各标号所代表的部件列表如下:In the accompanying drawings, the list of parts represented by each label is as follows:

1-薄型金属基材    2-阴极主体1-Thin metal substrate 2-Cathode main body

3-阳极主体        4-脚架3-Anode body 4-Pod

5-连接部          21、21a、31、31a-接脚5-Connection part 21, 21a, 31, 31a-pin

22、32-电极端     23-承载部22, 32-electrode terminal 23-carrying part

6-挤压机构        11-废料6-Extrusion mechanism 11-Scrap

7-散热结构        8-芯片7-Heat dissipation structure 8-Chip

9-封装体9-Package

具体实施方式 Detailed ways

有关本发明的技术内容及详细说明,现配合附图说明如下:Relevant technical content and detailed description of the present invention, now cooperate accompanying drawing to explain as follows:

图1、图2为本发明的单一片体的基材及基材冲压后的脚架示意图。如图1、图2所示:本发明的发光二极管的散热结构制作方法,主要是利用薄型金属基材冲压制成发光二极管的脚架,并将脚架上未被裁切的薄型废料进行挤压,以形成具有一定厚度的阴极主体的散热结构,达到节省材料的目的,可大幅度降低制作成本,让发光二极管的散热结构更加容易制作。FIG. 1 and FIG. 2 are schematic diagrams of a single-piece base material and a tripod after the base material is stamped according to the present invention. As shown in Figure 1 and Figure 2: the manufacturing method of the heat dissipation structure of the light-emitting diode of the present invention mainly uses the thin metal base material to punch the tripod of the light-emitting diode, and squeezes the uncut thin waste material on the tripod pressure to form a heat dissipation structure with a certain thickness of the cathode main body to achieve the purpose of saving materials, which can greatly reduce the production cost and make the heat dissipation structure of the light emitting diode easier to manufacture.

上述的发光二极管的散热结构在制作时,首先将一连续性的薄型金属基材1经过冲压机(图中未示出)冲压后,在基材1上形成具有阴极主体2及阳极主体3的脚架4。脚架4通过连接部5与基材1相连接成一体。阴极主体2上具有与连接部5相连接的接脚21、21a。两接脚21、21a间形成有一电极端22,电极端22设置有一可以承载发光芯片(图中未示出)的承载部23。阳极主体3上具有与连接部5连接的接脚31、31a。两接脚31、31a间形成有一电极端32,电极端32上可以焊接一导线(图中未示出),该导线与承载部23内所设置的发光芯片通过焊接连接。在脚架4冲压成型后,阴、阳极主体2、3的接脚21、21a、31、31a及电极端22、32与连接部5间的基材1皆被裁断,唯有承载部23周围与被裁切后的废料11相连接一体。待脚架4冲压裁切成型后,再利用挤压机构6对废料11进行挤压。在挤压过程中(如图3、图4、图5所示),挤压机构6会将废料11向承载部23中央处挤压,让废料11挤缩并与承载部23形成一体,形成有一定厚度的散热结构(如图6所示),该具有一定厚度的散热结构7提供发光二极管具有一个良好的热传导效率,可以将发光二极管所产生的热量传导至发光二极管外部。待上述散热结构制作完成后,再进行脚架4后续的植入芯片、焊接导线、封装、裁切等制作步骤,即完成具有一体成型散热结构的发光二极管。When the heat dissipation structure of the above-mentioned light-emitting diode is produced, firstly, a continuous thin metal substrate 1 is stamped by a punching machine (not shown in the figure), and then a cathode body 2 and an anode body 3 are formed on the substrate 1. Tripod 4. The stand 4 is integrally connected with the base material 1 through the connecting portion 5 . The cathode main body 2 has pins 21 , 21 a connected to the connecting portion 5 . An electrode end 22 is formed between the two pins 21, 21a, and the electrode end 22 is provided with a carrying portion 23 capable of carrying a light-emitting chip (not shown in the figure). The anode main body 3 has pins 31 , 31 a connected to the connecting portion 5 . An electrode terminal 32 is formed between the two pins 31, 31a, and a wire (not shown in the figure) can be welded on the electrode terminal 32, and the wire is connected to the light-emitting chip provided in the carrying portion 23 by welding. After the stand 4 is punched and formed, the pins 21, 21a, 31, 31a of the cathode and anode bodies 2, 3 and the base material 1 between the electrode terminals 22, 32 and the connecting part 5 are all cut, only the surrounding parts 23 It is integrally connected with the waste material 11 after being cut. After the tripod 4 is stamped and cut into shape, the extrusion mechanism 6 is used to extrude the waste material 11 . During the extrusion process (as shown in Figures 3, 4, and 5), the extrusion mechanism 6 will squeeze the waste material 11 toward the center of the bearing part 23, so that the waste material 11 is squeezed and integrated with the bearing part 23 to form a There is a heat dissipation structure with a certain thickness (as shown in FIG. 6 ). The heat dissipation structure 7 with a certain thickness provides the light emitting diode with a good heat conduction efficiency, and can conduct the heat generated by the light emitting diode to the outside of the light emitting diode. After the above-mentioned heat dissipation structure is manufactured, follow-up manufacturing steps such as chip implantation, wire welding, packaging, and cutting of the tripod 4 are carried out, that is, the light-emitting diode with an integrally formed heat dissipation structure is completed.

图7、图8为本发明的发光二极管剖视图及另一剖视示意图。如图7、图8所示:在本发明的二极管制作完成处于使用状态时,在阴极主体2及阳极主体3的接脚21、21a、31、31a接通电源后,承载部23所植入的芯片8将产生光源,所产生的光源将由透明封装体9投射出去,而在光源产生过程中,芯片8所产生的热量将快速的传导至散热结构7,再由散热结构7进行散热,以确保发光二极管使用寿命。7 and 8 are a cross-sectional view and another schematic cross-sectional view of the light emitting diode of the present invention. As shown in Figure 7 and Figure 8: when the diode of the present invention is completed and in use, after the pins 21, 21a, 31, 31a of the cathode body 2 and the anode body 3 are powered on, the bearing part 23 is implanted The chip 8 will generate a light source, and the generated light source will be projected out by the transparent package 9, and in the process of generating the light source, the heat generated by the chip 8 will be quickly conducted to the heat dissipation structure 7, and then dissipated by the heat dissipation structure 7, so as to To ensure the service life of light emitting diodes.

本发明进一步的特征在于,散热结构7的体积、厚度的大小,可以通过挤压过程来控制,以调整散热结构7热传导效率。A further feature of the present invention is that the volume and thickness of the heat dissipation structure 7 can be controlled through the extrusion process to adjust the heat conduction efficiency of the heat dissipation structure 7 .

以上所述仅为本发明的优选实施例,并非因此即限制本发明的专利范围,凡是运用本发明的说明书及附图内容所作的等效结构变换,或直接或间接运用在其它相关的技术领域,均同理包括在本发明的专利范围内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. All equivalent structural transformations made by using the description and drawings of the present invention are directly or indirectly used in other related technical fields. , are all included in the patent scope of the present invention in the same way.

Claims (8)

1. the method for fabricating structure of heat elimination of a light emitting diode is characterized in that, described method includes:
A) the slim base material that provides a continuity to carry;
B) utilize a punching mechanism that described base material is carried out punching press, described base material formed have the foot rest of a continuity and tool negative electrode, anode body, after described foot rest drawing, have not cropped waste material between described cathode body:
C) utilize pressing mechanism that the not cropped slim waste material of described cathode body is pushed making, described slim waste material is squeezed into the radiator structure that has certain thickness and can form one with cathode body.
2. the method for fabricating structure of heat elimination of light emitting diode as claimed in claim 1 is characterized in that described base material is a metal material.
3. the method for fabricating structure of heat elimination of light emitting diode as claimed in claim 1 is characterized in that described foot rest links into an integrated entity by connecting portion and described base material.
4. the method for fabricating structure of heat elimination of light emitting diode as claimed in claim 1 is characterized in that having two pins that are connected with connecting portion on the described cathode body, is formed with an electrode tip between described pin, and described electrode tip is provided with a supporting part.
5. the method for fabricating structure of heat elimination of light emitting diode as claimed in claim 4 is characterized in that implantation has a luminescence chip on the described supporting part.
6. the method for fabricating structure of heat elimination of light emitting diode as claimed in claim 1, it is characterized in that having two pins that are connected with connecting portion on the described anode body, be formed with an electrode tip between described pin, welding one lead on the described electrode tip, set luminescence chip is welded to connect in described lead and the supporting part.
7. the method for fabricating structure of heat elimination of light emitting diode as claimed in claim 1, after it is characterized in that described radiator structure is formed on the foot rest punch forming, base material between the pin of described cathode and anode main body and electrode tip and connecting portion is all by severing, and around the supporting part with cropped after waste material be connected and be integral, utilize the pressing mechanism extruding to form radiator structure again.
8. the method for fabricating structure of heat elimination of light emitting diode as claimed in claim 1 is characterized in that the volume of described radiator structure, the size of thickness, can control by extrusion process, to adjust the radiator structure heat conduction efficiency.
CNB2004101016516A 2004-12-20 2004-12-20 Method for manufacturing heat radiation structure of light emitting diode Expired - Fee Related CN100384584C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004101016516A CN100384584C (en) 2004-12-20 2004-12-20 Method for manufacturing heat radiation structure of light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004101016516A CN100384584C (en) 2004-12-20 2004-12-20 Method for manufacturing heat radiation structure of light emitting diode

Publications (2)

Publication Number Publication Date
CN1796041A CN1796041A (en) 2006-07-05
CN100384584C true CN100384584C (en) 2008-04-30

Family

ID=36817482

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004101016516A Expired - Fee Related CN100384584C (en) 2004-12-20 2004-12-20 Method for manufacturing heat radiation structure of light emitting diode

Country Status (1)

Country Link
CN (1) CN100384584C (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725834B (en) * 2020-04-29 2021-04-21 台灣勁合有限公司 Semi-finished products of light-emitting components

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224569A (en) * 1993-01-26 1994-08-12 Toshiba Corp Light emitting diode mounting device
CN2411577Y (en) * 2000-02-03 2000-12-20 亿光电子工业股份有限公司 Light-emitting diode package cooling device
CN1369909A (en) * 2001-02-13 2002-09-18 施克文 Radiating structure of LED
US6482664B1 (en) * 2000-07-28 2002-11-19 Jeong-Hoon Lee Method for manufacturing white light-emitting diodes
JP2003086815A (en) * 2001-09-12 2003-03-20 Fuji Electric Co Ltd Semiconductor device
CN2587063Y (en) * 2002-10-25 2003-11-19 光鼎电子股份有限公司 High-power light-emitting diodes plus cooling device
CN1479384A (en) * 2002-08-26 2004-03-03 光鼎电子股份有限公司 Method for manufacturing external heat radiation structure of light emitting diode
CN1531119A (en) * 2003-03-10 2004-09-22 高陆股份有限公司 LED module with high-efficiency heat radiation
CN2643489Y (en) * 2003-06-23 2004-09-22 陈聪欣 Improvement of Light Emitting Diode Structure
CN2645244Y (en) * 2003-09-29 2004-09-29 上海金桥大晨光电科技有限公司 High power light-emitting diode (LED) device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224569A (en) * 1993-01-26 1994-08-12 Toshiba Corp Light emitting diode mounting device
CN2411577Y (en) * 2000-02-03 2000-12-20 亿光电子工业股份有限公司 Light-emitting diode package cooling device
US6482664B1 (en) * 2000-07-28 2002-11-19 Jeong-Hoon Lee Method for manufacturing white light-emitting diodes
CN1369909A (en) * 2001-02-13 2002-09-18 施克文 Radiating structure of LED
JP2003086815A (en) * 2001-09-12 2003-03-20 Fuji Electric Co Ltd Semiconductor device
CN1479384A (en) * 2002-08-26 2004-03-03 光鼎电子股份有限公司 Method for manufacturing external heat radiation structure of light emitting diode
CN2587063Y (en) * 2002-10-25 2003-11-19 光鼎电子股份有限公司 High-power light-emitting diodes plus cooling device
CN1531119A (en) * 2003-03-10 2004-09-22 高陆股份有限公司 LED module with high-efficiency heat radiation
CN2643489Y (en) * 2003-06-23 2004-09-22 陈聪欣 Improvement of Light Emitting Diode Structure
CN2645244Y (en) * 2003-09-29 2004-09-29 上海金桥大晨光电科技有限公司 High power light-emitting diode (LED) device

Also Published As

Publication number Publication date
CN1796041A (en) 2006-07-05

Similar Documents

Publication Publication Date Title
JP2011176017A (en) Light emitting device and method for manufacturing the same
TWI363432B (en) A structure of a light emitting diode and a method to assemble thereof
CN107866676A (en) Electrical contact rushes welding integrated device and method
US9468993B2 (en) Method for producing semiconductor device
EP2408031A2 (en) Light emitting diode package and frame shaping method of the same
CN100384584C (en) Method for manufacturing heat radiation structure of light emitting diode
CN103042370A (en) Method for manufacturing heat dissipation frame and product thereof
CN101546711B (en) Lead frame and manufacturing method thereof
CN102122621B (en) Tight connection method of cooling fins and heat pipes
CN104051603A (en) A kind of manufacturing process of double-sided LED light bar
JP2013069903A (en) Light emission diode support frame construction, and manufacturing method thereof (1)
TWI237914B (en) Preparation method of heat-dissipation structure for LED
CN101661919A (en) High-power transistor
JP5505735B2 (en) Light-emitting diode support frame structure and manufacturing method thereof (2)
CN110280677B (en) Stamping hardware of electronic equipment and production process thereof
CN210920978U (en) Rigid metal plate luminous support
CN201297600Y (en) Improved structure of radiator
CN109994591A (en) A composite mirror aluminum circuit support for LED COB encapsulated light source and its manufacturing method
CN111452376A (en) Manufacturing process of conductive foam
JP4367009B2 (en) Hermetic terminal with heat sink and manufacturing method thereof
CN215578607U (en) LED support with electrodes outside cup
CN203980170U (en) LED light source filament support
CN102120282A (en) Welding jig
CN103258772B (en) Heating seat and heating device for wire bonding process
CN2899117Y (en) Heat dissipation structure of light-emitting diodes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee