CN100384584C - Method for manufacturing heat radiation structure of light emitting diode - Google Patents
Method for manufacturing heat radiation structure of light emitting diode Download PDFInfo
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- CN100384584C CN100384584C CNB2004101016516A CN200410101651A CN100384584C CN 100384584 C CN100384584 C CN 100384584C CN B2004101016516 A CNB2004101016516 A CN B2004101016516A CN 200410101651 A CN200410101651 A CN 200410101651A CN 100384584 C CN100384584 C CN 100384584C
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- emitting diode
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- 230000005855 radiation Effects 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000002699 waste material Substances 0.000 claims abstract description 17
- 238000001125 extrusion Methods 0.000 claims abstract description 10
- 238000004080 punching Methods 0.000 claims abstract description 4
- 238000003466 welding Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 2
- 230000008030 elimination Effects 0.000 claims 8
- 238000003379 elimination reaction Methods 0.000 claims 8
- 238000004020 luminiscence type Methods 0.000 claims 2
- 238000003825 pressing Methods 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 33
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
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Abstract
Description
技术领域 technical field
本发明涉及一种发光二极管的散热结构制作方法,尤其涉及一种利用挤压方式,将发光二极管的阴极主体上未被裁切的废料进行挤压,形成与阴极主体一体的散热结构的制作方法。The invention relates to a method for manufacturing a heat dissipation structure of a light-emitting diode, in particular to a method for making a heat dissipation structure integrated with the cathode body by extruding uncut waste materials on the cathode body of the light-emitting diode by means of extrusion .
背景技术 Background technique
目前,发光二极管已广泛被应用在照明设备上,发光二极管也被制作成具有高效率、高功率及高亮度等特性的产品。因此,高效率、高功率及高亮度的发光二极管在使用时,相对会产生极高的热量,因此本领域技术人员在制作发光二极管的脚架时,均会在脚架上成形散热结构,可以将发光二极管所产生的热量散去,以确保发光二极管的使用寿命。而传统发光二极管在脚架成型时,同时在脚架的阴极主体承载芯片的承载部的两翼上成型有散热结构,由于该散热结构体积小,厚度薄,因此导致热传导效率不佳,造成散热效果不佳,让发光二极管使用寿命减短。因此,有本领域技术人员为了改进发光二极管的散热结构问题,利用厚的金属基材,通过蚀刻或微影的加工方法,将阴极、阳极主体的接脚处蚀刻或微影成薄形,让阴极主体所承载芯片的区域保持原有厚度,以形成散热结构。另一种则是直接在脚架冲压成型后,在脚架的阴极主体承载芯片的承载部上焊接具有一厚度的散热结构,以形成阴极主体的散热结构。虽然,这种具有一定厚度的散热结构虽然具有高效率的热传效果,可让发光二极管所产生的热量快速散去,确保发光二极体的使用寿命。但是,这两种厚形的散热结构在制作上较费工时、工序,且也不易制作,相对也造成制作成本的增加。At present, light-emitting diodes have been widely used in lighting equipment, and light-emitting diodes have also been manufactured into products with characteristics such as high efficiency, high power, and high brightness. Therefore, high-efficiency, high-power and high-brightness light-emitting diodes will relatively generate extremely high heat when they are used. Therefore, when making the tripod of the light-emitting diode, those skilled in the art will form a heat dissipation structure on the tripod, which can Dissipate the heat generated by the light emitting diodes to ensure the service life of the light emitting diodes. However, when the traditional light-emitting diode is formed on the tripod, a heat dissipation structure is formed on the two wings of the cathode main body of the tripod to carry the chip at the same time. Because the heat dissipation structure is small in size and thin in thickness, the heat conduction efficiency is not good and the heat dissipation effect is caused. If it is not good, the service life of the light-emitting diode will be shortened. Therefore, in order to improve the heat dissipation structure of light-emitting diodes, those skilled in the art use thick metal substrates to etch or lithography the pins of the cathode and anode bodies into thin shapes, so that The area where the chip is carried by the cathode main body maintains the original thickness to form a heat dissipation structure. The other is to weld a heat dissipation structure with a thickness on the supporting part of the cathode main body of the footstand that carries the chip directly after the footstand is stamped and formed, so as to form the heat dissipation structure of the cathode main body. Although this heat dissipation structure with a certain thickness has a high-efficiency heat transfer effect, it can quickly dissipate the heat generated by the light-emitting diodes and ensure the service life of the light-emitting diodes. However, these two thick heat dissipation structures are time-consuming and difficult to manufacture, which relatively increases the manufacturing cost.
本发明内容Contents of the invention
本发明的主要目的在于解决上述现有技术中存在的缺陷。本发明利用挤压方式,将薄型金属基材挤压形成具有一定厚度,且可与发光二极的阴极主体形成一体的散热结构,除了具有较佳的热传导特性外,还可以节省材料,大幅度降低制作成,让发光二极管的散热结构更容易制作。The main purpose of the present invention is to solve the above-mentioned defects in the prior art. The invention utilizes an extrusion method to extrude a thin metal base material to form a heat dissipation structure with a certain thickness and can be integrated with the cathode body of the light-emitting diode. In addition to having better heat conduction characteristics, it can also save materials and greatly The manufacturing cost is reduced, and the heat dissipation structure of the light-emitting diode is easier to manufacture.
为了实现上述目的,本发明的发光二极管的散热结构制作方法,提供一连续性输送的薄型基材;将该薄型基材利用冲压机构冲压形成具有一连续性且具阴极、阳极主体的脚架;在该脚架冲压成形后,该阴极主体间存再有未被裁切废料,再将该阴极主体上未被裁切的薄型废料利用挤压机构进行挤压,将该薄型废料挤压成具有一定厚度且可与阴极主体形成一体的散热结构。In order to achieve the above object, the manufacturing method of the heat dissipation structure of the light-emitting diode of the present invention provides a thin base material that is continuously transported; the thin base material is stamped by a stamping mechanism to form a tripod that has a continuity and has a cathode and an anode body; After the tripod is stamped and formed, there are uncut waste materials between the cathode main body, and then the uncut thin waste materials on the cathode main body are extruded by an extrusion mechanism, and the thin waste materials are extruded into a A heat dissipation structure that has a certain thickness and can be integrated with the cathode body.
本发明所述的方法能够使发光二极具有较佳的散热效果,还可以节省材料,大幅度降低制作成,让发光二极管的散热结构更容易制作。The method of the invention can make the light-emitting diode have a better heat dissipation effect, can also save materials, greatly reduce the manufacturing cost, and make the heat dissipation structure of the light-emitting diode easier to manufacture.
附图的简要说明Brief description of the drawings
图1为本发明的单一片体的基材示意图;Fig. 1 is a schematic diagram of a substrate of a single sheet of the present invention;
图2为本发明的基材冲压后的脚架示意图;Fig. 2 is a schematic diagram of the tripod after stamping of the base material of the present invention;
图3、图4、图5为图2在3-3位置断面剖视基材废料挤压过程示意图;Fig. 3, Fig. 4 and Fig. 5 are the schematic diagrams of the extruding process of the base material waste in the cross section of Fig. 2 at position 3-3;
图6为本发明的基材废料挤压完成形成散热结构示意图;Fig. 6 is a schematic diagram of a heat dissipation structure formed by extruding base material waste in the present invention;
图7为本发明的发光二极管剖视示意图;7 is a schematic cross-sectional view of a light emitting diode of the present invention;
图8为本发明的发光二极管另一剖视示意图。FIG. 8 is another schematic cross-sectional view of the light emitting diode of the present invention.
附图中,各标号所代表的部件列表如下:In the accompanying drawings, the list of parts represented by each label is as follows:
1-薄型金属基材 2-阴极主体1-Thin metal substrate 2-Cathode main body
3-阳极主体 4-脚架3-Anode body 4-Pod
5-连接部 21、21a、31、31a-接脚5-
22、32-电极端 23-承载部22, 32-electrode terminal 23-carrying part
6-挤压机构 11-废料6-Extrusion mechanism 11-Scrap
7-散热结构 8-芯片7-Heat dissipation structure 8-Chip
9-封装体9-Package
具体实施方式 Detailed ways
有关本发明的技术内容及详细说明,现配合附图说明如下:Relevant technical content and detailed description of the present invention, now cooperate accompanying drawing to explain as follows:
图1、图2为本发明的单一片体的基材及基材冲压后的脚架示意图。如图1、图2所示:本发明的发光二极管的散热结构制作方法,主要是利用薄型金属基材冲压制成发光二极管的脚架,并将脚架上未被裁切的薄型废料进行挤压,以形成具有一定厚度的阴极主体的散热结构,达到节省材料的目的,可大幅度降低制作成本,让发光二极管的散热结构更加容易制作。FIG. 1 and FIG. 2 are schematic diagrams of a single-piece base material and a tripod after the base material is stamped according to the present invention. As shown in Figure 1 and Figure 2: the manufacturing method of the heat dissipation structure of the light-emitting diode of the present invention mainly uses the thin metal base material to punch the tripod of the light-emitting diode, and squeezes the uncut thin waste material on the tripod pressure to form a heat dissipation structure with a certain thickness of the cathode main body to achieve the purpose of saving materials, which can greatly reduce the production cost and make the heat dissipation structure of the light emitting diode easier to manufacture.
上述的发光二极管的散热结构在制作时,首先将一连续性的薄型金属基材1经过冲压机(图中未示出)冲压后,在基材1上形成具有阴极主体2及阳极主体3的脚架4。脚架4通过连接部5与基材1相连接成一体。阴极主体2上具有与连接部5相连接的接脚21、21a。两接脚21、21a间形成有一电极端22,电极端22设置有一可以承载发光芯片(图中未示出)的承载部23。阳极主体3上具有与连接部5连接的接脚31、31a。两接脚31、31a间形成有一电极端32,电极端32上可以焊接一导线(图中未示出),该导线与承载部23内所设置的发光芯片通过焊接连接。在脚架4冲压成型后,阴、阳极主体2、3的接脚21、21a、31、31a及电极端22、32与连接部5间的基材1皆被裁断,唯有承载部23周围与被裁切后的废料11相连接一体。待脚架4冲压裁切成型后,再利用挤压机构6对废料11进行挤压。在挤压过程中(如图3、图4、图5所示),挤压机构6会将废料11向承载部23中央处挤压,让废料11挤缩并与承载部23形成一体,形成有一定厚度的散热结构(如图6所示),该具有一定厚度的散热结构7提供发光二极管具有一个良好的热传导效率,可以将发光二极管所产生的热量传导至发光二极管外部。待上述散热结构制作完成后,再进行脚架4后续的植入芯片、焊接导线、封装、裁切等制作步骤,即完成具有一体成型散热结构的发光二极管。When the heat dissipation structure of the above-mentioned light-emitting diode is produced, firstly, a continuous
图7、图8为本发明的发光二极管剖视图及另一剖视示意图。如图7、图8所示:在本发明的二极管制作完成处于使用状态时,在阴极主体2及阳极主体3的接脚21、21a、31、31a接通电源后,承载部23所植入的芯片8将产生光源,所产生的光源将由透明封装体9投射出去,而在光源产生过程中,芯片8所产生的热量将快速的传导至散热结构7,再由散热结构7进行散热,以确保发光二极管使用寿命。7 and 8 are a cross-sectional view and another schematic cross-sectional view of the light emitting diode of the present invention. As shown in Figure 7 and Figure 8: when the diode of the present invention is completed and in use, after the
本发明进一步的特征在于,散热结构7的体积、厚度的大小,可以通过挤压过程来控制,以调整散热结构7热传导效率。A further feature of the present invention is that the volume and thickness of the
以上所述仅为本发明的优选实施例,并非因此即限制本发明的专利范围,凡是运用本发明的说明书及附图内容所作的等效结构变换,或直接或间接运用在其它相关的技术领域,均同理包括在本发明的专利范围内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. All equivalent structural transformations made by using the description and drawings of the present invention are directly or indirectly used in other related technical fields. , are all included in the patent scope of the present invention in the same way.
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06224569A (en) * | 1993-01-26 | 1994-08-12 | Toshiba Corp | Light emitting diode mounting device |
CN2411577Y (en) * | 2000-02-03 | 2000-12-20 | 亿光电子工业股份有限公司 | Light-emitting diode package cooling device |
CN1369909A (en) * | 2001-02-13 | 2002-09-18 | 施克文 | Radiating structure of LED |
US6482664B1 (en) * | 2000-07-28 | 2002-11-19 | Jeong-Hoon Lee | Method for manufacturing white light-emitting diodes |
JP2003086815A (en) * | 2001-09-12 | 2003-03-20 | Fuji Electric Co Ltd | Semiconductor device |
CN2587063Y (en) * | 2002-10-25 | 2003-11-19 | 光鼎电子股份有限公司 | High-power light-emitting diodes plus cooling device |
CN1479384A (en) * | 2002-08-26 | 2004-03-03 | 光鼎电子股份有限公司 | Method for manufacturing external heat radiation structure of light emitting diode |
CN1531119A (en) * | 2003-03-10 | 2004-09-22 | 高陆股份有限公司 | LED module with high-efficiency heat radiation |
CN2643489Y (en) * | 2003-06-23 | 2004-09-22 | 陈聪欣 | Improvement of Light Emitting Diode Structure |
CN2645244Y (en) * | 2003-09-29 | 2004-09-29 | 上海金桥大晨光电科技有限公司 | High power light-emitting diode (LED) device |
-
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- 2004-12-20 CN CNB2004101016516A patent/CN100384584C/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06224569A (en) * | 1993-01-26 | 1994-08-12 | Toshiba Corp | Light emitting diode mounting device |
CN2411577Y (en) * | 2000-02-03 | 2000-12-20 | 亿光电子工业股份有限公司 | Light-emitting diode package cooling device |
US6482664B1 (en) * | 2000-07-28 | 2002-11-19 | Jeong-Hoon Lee | Method for manufacturing white light-emitting diodes |
CN1369909A (en) * | 2001-02-13 | 2002-09-18 | 施克文 | Radiating structure of LED |
JP2003086815A (en) * | 2001-09-12 | 2003-03-20 | Fuji Electric Co Ltd | Semiconductor device |
CN1479384A (en) * | 2002-08-26 | 2004-03-03 | 光鼎电子股份有限公司 | Method for manufacturing external heat radiation structure of light emitting diode |
CN2587063Y (en) * | 2002-10-25 | 2003-11-19 | 光鼎电子股份有限公司 | High-power light-emitting diodes plus cooling device |
CN1531119A (en) * | 2003-03-10 | 2004-09-22 | 高陆股份有限公司 | LED module with high-efficiency heat radiation |
CN2643489Y (en) * | 2003-06-23 | 2004-09-22 | 陈聪欣 | Improvement of Light Emitting Diode Structure |
CN2645244Y (en) * | 2003-09-29 | 2004-09-29 | 上海金桥大晨光电科技有限公司 | High power light-emitting diode (LED) device |
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