CN100377386C - Selective laser crystallization method and display panel manufactured by same - Google Patents
Selective laser crystallization method and display panel manufactured by same Download PDFInfo
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- CN100377386C CN100377386C CNB2004101019529A CN200410101952A CN100377386C CN 100377386 C CN100377386 C CN 100377386C CN B2004101019529 A CNB2004101019529 A CN B2004101019529A CN 200410101952 A CN200410101952 A CN 200410101952A CN 100377386 C CN100377386 C CN 100377386C
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- 238000000034 method Methods 0.000 title description 28
- 238000005499 laser crystallization Methods 0.000 title description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 62
- 229920005591 polysilicon Polymers 0.000 claims abstract description 60
- 238000005224 laser annealing Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000004020 luminiscence type Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 30
- 238000002425 crystallisation Methods 0.000 description 22
- 230000008025 crystallization Effects 0.000 description 20
- 208000034699 Vitreous floaters Diseases 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000013078 crystal Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 208000019901 Anxiety disease Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000035784 germination Effects 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
A display panel, comprising: a substrate having an active light emitting display region (DisplayingRegion) and a driving circuit region (circuitous driving region); and a polysilicon layer formed on the substrate and having a first polysilicon layer and a second polysilicon layer corresponding to the active light-emitting display region and the driving circuit region, wherein the grain size of the second polysilicon layer is larger than that of the first polysilicon layer. The second polysilicon layer is formed by continuous wave laser annealing (ELA), and the active light emitting display region of the first polysilicon layer is formed by Excimer Laser Annealing (ELA).
Description
Technical field
Relevant a kind of display floater of the present invention and manufacture method thereof, and particularly with the selective laser crystallisation amorphous silicon of display floater is converted to the method for polysilicon and the display floater of manufacturing thereof about a kind of.
Background technology
Organic light emission (Organic Electroluminescence) flat-panel screens is the current drives assembly, can be divided into passive matrix method (Passive Matrix Method) and active-matrix method (Active Matrix Method) according to type of drive.And active organic light-emitting display (AMOLED) is to utilize thin-film transistor (Thin Film Transistor, TFT) collocation electric capacity storage device are controlled the intensity gray scale performance of organic luminescent assembly (OLED).
Roughly, the cost of manufacture and the technology door of passive organic light-emitting display (PMOLED) are lower, but it is unclear to be subject to drive current usefulness, resolution can't improve, and under passive driving, scanning line selection to pixel can be lighted, but can't keep brightness, so the application product size limitations is in about 5 " in.Active organic light-emitting display is then because there is the cause of electric capacity storage assembly, after the inswept pixel of scan line, this pixel still can keep original brightness, therefore OLED does not need to be driven to very high brightness, therefore preferable life-span performance can be reached, also high-resolution demand can be reached.Moreover the drive current usefulness of active organic light-emitting display is better than the passive organic light-emitting display, and pixel can be integrated on the glass substrate with electrical assembly TFT.
The technology of growth TFT on glass substrate, can be amorphous silicon (Amorphous Silicon, a-Si) processing procedure and low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) processing procedure, the maximum of LTPS TFT and a-Si TFT is its electrical and complicated and simple difference of processing procedure respectively.LTPS TFT has higher carrier mobility, and higher carrier mobility means that TFT can provide electric current more fully, yet more complicated on its processing procedure; Otherwise a-Si TFT then, though the carrier mobility of a-Si is not so good as LTPS, its processing procedure is simpler.
Become the technical elements of polysilicon at the conversion amorphous silicon, developed at present and multiple method for crystallising, quasi-molecule laser annealing (Excimer Laser Annealing for example, ELA) technology, continuous crystallisation (ContinuousGrain Silicon, CGS) technology, laser transverse crystallizing (Sequential Lateral Solidification, SLS) technology and metal induced transverse crystallizing (Metal Induced Lateral Crystallization, MILC) technology etc., and various laser, as excimer laser (Excimer Laser), continuous wave laser (Continuous Wave (CW) Laser) and laser beam pulses (Laser Beam Pulse) etc.At present mostly with laser beam pulses irradiation, or utilize and to produce temperature gradient to reach the mode of transverse crystallizing maximum.
With laser transverse crystallizing (SLS) technology is example, utilizes the light shield that has different light transmittances in the optical system, can make the laser that arrives amorphous silicon produce a temperature gradient, and make horizontal one-tenth germination continue to grow up.
In addition, zones of different also has different performance requirements in the display.With active active display is example, generally comprise active luminous display area territory (Displaying Region) and drive circuit area (CurrentDriving Region), pay attention to whether having the electrical performance of leakage current in active luminous display area territory, then pay attention to the electrical performance of carrier mobility (Mobility) in drive circuit area.And the grain size of polysilicon (Grain Size) and crystal boundary (Grain Boundary) systematicness all can impact carrier mobility in the drive circuit area.Many traditionally use excimer laser convert the amorphous silicon in drive circuit area and active luminous display area territory to polysilicon, yet in the crystallization process that uses excimer laser, be easy to generate pulsed laser energy error and missing pulse, make that the grain size and the crystal boundary of crystallization are irregular, so after operating voltage drives, the electric current difference that each TFT obtained, cause TFT electrically inhomogeneous when driving active luminous display area territory, make display be easy to generate point defect or other uniformity defect (Mura).Generally speaking, the crystal grain big carrier mobility of healing is better, and crystal boundary is rule more, and the show state in active luminous display area territory more evenly.
Therefore, how to improve the crystallization mode of display module, make the polysilicon after the crystallization have big crystal grain and more regular crystal boundary, and do not have the anxiety of generation defective, can promote production capacity (Throughout) again and reduce production costs aspect economic benefit, real is developer's one significant effort target.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of method of selective laser crystallization and the display floater of manufacturing thereof, and reach the electrical uniformity of the drive circuit area that increases display floater, and increase production capacity.
Propose a kind of display floater according to an aspect of the present invention, comprising: a substrate has an active luminous display area territory (Displaying Region) and one drive circuit zone (Circuit DrivingRegion); An and polysilicon layer, be formed on the substrate, and polysilicon layer has one first polysilicon layer and one second polysilicon layer is corresponding with active luminous display area territory and drive circuit area respectively, and the grain size of second polysilicon layer is the grain size greater than first polysilicon layer.Wherein, second polysilicon layer is to use continuous wave laser annealing (Continuous Wave Laser Annealing) mode and forms.Quasi-molecule laser annealing (Excimer LaserAnnealing, ELA) mode and forming then can be used in the active luminous display area of first polysilicon layer territory.
Propose a kind of active light emitting display panel according to a further aspect of the invention, comprise at least: a substrate; One scans holding wire (Scan Line), is arranged on the substrate; One data signal line (Data Line) is arranged on the substrate and perpendicular to scanning holding wire; One power signal line (Power Line) is arranged on the substrate and with the data-signal line parallel and keep a distance; One the first transistor is arranged on the substrate and the grid and the scan signal line of the first transistor couple, and the source electrode and the data signal line of the first transistor couple; One transistor seconds is arranged on the substrate and the grid of transistor seconds and the drain electrode of the first transistor couple, and the source electrode of transistor seconds and power signal line couple; And a luminescence component, for example be an Organic Light Emitting Diode, be arranged on the substrate and couple with the drain electrode of transistor seconds.Wherein, scan signal line, data signal line and power signal line define an active luminous display area territory.Active luminous display area territory has one first polysilicon layer, and this drive circuit area has one second polysilicon layer, and the grain size of second polysilicon layer is greater than the grain size of first polysilicon layer.
Propose a kind of manufacture method of display floater according to another aspect of the invention, comprise that at least step is as follows.One substrate at first is provided, and substrate has an active luminous display area territory and one drive circuit zone.Then, deposit an amorphous silicon layer on substrate, amorphous silicon layer has one first amorphous silicon layer and one second amorphous silicon layer, and wherein first amorphous silicon layer and second amorphous silicon layer are corresponding to active luminous display area territory and drive circuit area.Then, use continuous wave laser annealing (Continuous Wave Laser Annealing) mode crystallization second amorphous silicon layer to form one second polysilicon layer; And use excimer laser annealing (Excimer Laser Annealing ELA) mode crystallization first amorphous silicon layer to form one first polysilicon layer.
For the present invention's above-mentioned purpose, characteristics and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is elaborated as follows.
Description of drawings
Fig. 1 illustrates a kind of equivalent circuit diagram of single pixel of active light emitting display panel;
Fig. 2 and Fig. 3 illustrate the schematic diagram that carries out the selective laser crystallization according to the active light emitting display panel of a preferred embodiment of the present invention;
Fig. 4 is the flow chart according to the display floater manufacture method of a preferred embodiment of the present invention; And
Fig. 5 is the crystallization figure of continuous wave laser annealing.
Embodiment
The present invention utilizes the selective laser crystallization mode that the active luminous display area territory and the drive circuit area of display floater are carried out the crystallization of different modes, makes display floater can improve production capacity (Throughput) on producing and can make its drive circuit area have good carrier mobility (Mobility) again.Wherein, the polysilicon of drive circuit area is to use continuous wave laser annealing (Continuous Wave Laser Annealing; CW Laser Annealing) mode forms.Polysilicon as for active luminous display area territory then can use big, (Overlap) the less mode that overlaps of tempering displacement, as quasi-molecule laser annealing (Excimer Laser Annealing; ELA) mode forms.So, the polysilicon layer crystallite dimension of drive circuit area is bigger, and crystal boundary is rule, makes the electrical performance of carrier mobility preferable; And the formed polysilicon layer crystallite dimension in active luminous display area territory is less, but can finish crystallization process fast, improves the overall throughput of display floater.
Wherein, when using the XeCl excimer laser that for example has the 308nm wavelength to scan in active luminous display area territory, the big young pathbreaker of the vertical direction of this rectangle light beam determines the area of crystallization polysilicon.Can provide length to be about 200mm with board, the quasi-molecule laser annealing system that width is about the beam size of 1.5mm is an example, just can once carry out the processing procedure of 12.1 inches display floaters, as for the display floater of large-size, as substrate size 600 * 720mm
2With 730 * 920mm
2Then but laser beam length 300mm and 365mm carry out processing procedure.
Below be to do detailed description of the present invention, yet this embodiment can't do limit to the scope of desire protection of the present invention with embodiment.In addition, be to be that example elaborates in an embodiment with active light emitting display panel, but technical characterictic of the present invention can be applicable in other display floater, for example active organic light-emitting display floater or low-temperature polysilicon film transistor assembly (LTPS TFT Device).
Please refer to Fig. 1, it illustrates a kind of equivalent circuit diagram of single pixel of active light emitting display panel.Wherein, scan holding wire (Scan Line) 11 and be formed at a direction, data signal line (Data Line) 12 is formed at the direction vertical with scanning holding wire 11, power signal line (Power Line) 13 then with the data signal line 12 parallel and distances of being separated by.Active luminous display area territory is that the position is scanning between holding wire 11, data signal line 12 and the power signal line 13, and a luminescence component 17 is to be applied in the active luminous display area territory, and luminescence component 17 for example is an Organic Light Emitting Diode (OLED).According to the signal that scans holding wire 11, whether the signal of the first transistor 14 may command data signal lines 12 enters active luminous display area territory.Be coupled to luminescence component 17 and enter active luminous display area territory so that a voltage (Power Supply) to be provided through power signal line 13 as for 15 of transistor secondses according to the signal that this first transistor 14 is provided.In addition, 16 in capacitor (Capacitor) is coupled to the grid (GateElectrode) of power signal line 13 and transistor seconds 15.
Fig. 2 and Fig. 3 illustrate the schematic diagram that carries out the selective laser crystallization according to the active light emitting display panel of a preferred embodiment of the present invention.Comprise an active luminous display area territory (or claiming pixel region) 22 and drive circuit area 24 on the substrate 20.Wherein, drive circuit area 24 comprises gate driver circuit (Gate Driver IC) 241, data drive circuit (Data Driver IC) 242 and three parts such as controller (Controller is as the first transistor) 243 grades.In this embodiment, for example (Plasma-Enhanced Chemical Vapor Deposition, PECVD) depositional mode forms an amorphous silicon (Amorphous Silicon) layer earlier with the plasma enhanced chemical vapor deposition method on substrate 20 earlier.Utilize little shadow technology (gold-tinted etching) on amorphous silicon layer, to form earlier alignment mark (Aliment Mark) then, the contraposition effect when reaching laser crystallization.Then, as shown in Figure 2, use the crystallization technique of continuous wave laser annealing to make drive circuit area 24 form polysilicon (Polysilicon) layer.Arrow among Fig. 2 is then represented the scanning direction of CW laser beam.
Then, as shown in Figure 3, crystallization is carried out to form polysilicon (Polysilicon) layer with the technology of quasi-molecule laser annealing in active luminous display area territory 22.Arrow among Fig. 3 is then represented the scanning direction of ELA laser beam.Afterwards, polysilicon is made into the assemblies such as transistor that contain in drive circuit and the pixel.At last, can for example be that an organic luminous layer is formed on the TFT assembly in hot evaporation mode with luminescent layer, to form an active organic light-emitting display floater.
Please refer to Fig. 4, it is the flow chart according to the display floater manufacture method of a preferred embodiment of the present invention.Manufacture method comprises that at least step is as follows.At first, carry out step 401, a substrate is provided, have an active luminous display area territory and one drive circuit zone on the substrate.Then, carry out step 403, deposit an amorphous silicon layer on substrate, amorphous silicon layer has one first amorphous silicon layer and one second amorphous silicon layer, and first amorphous silicon layer and this second amorphous silicon layer are corresponding with active luminous display area territory and drive circuit area respectively.Wherein, can utilize micro-photographing process on amorphous silicon layer, to form one and aim at mark (Aliment Mark).Then, carry out step 405, use continuous wave laser annealing (Continuous Wave Laser Annealing) mode crystallization second amorphous silicon layer to form one second polysilicon layer; (Excimer Laser Annealing, ELA) mode crystallization first amorphous silicon layer is to form one first polysilicon layer to use excimer laser annealing.Afterwards, can form a first transistor and a transistor seconds on substrate and corresponding drive circuit area, and form a luminescence component (for example being an Organic Light Emitting Diode) and couple with transistor seconds.
Manufacture method according to a preferred embodiment of the present invention, drive circuit area 24 (comprising gate driver circuit 241, data drive circuit 242 and controller 243) formed crystal grain (Grain Size) size is greater than the formed crystallite dimension in active luminous display area territory 22 (comprising organic luminescent assembly 17), and the crystal boundary of drive circuit area 24 is also regular, therefore can promote carrier mobility, improve TFT and electrically reach the uniformity.In addition, cooperate fast the ELA technology to carry out the laser annealing in the active luminous display area of large tracts of land territory 22, can finish crystallization process fast, production capacity is improved.
Fig. 5 is the crystallization figure (CW Laser Flow Pattern) of continuous wave laser annealing.As can be seen from Figure, the crystalline particle that uses continuous wave laser annealing to be produced is little and even, and therefore the crystallization figure line that is presented is careful and narrow.In addition, the grain mark (Grain Boundary) with the formed polysilicon of continuous wave laser annealing drive circuit area is to be less than with the formed grain mark in the active luminous display area of quasi-molecule laser annealing territory.
In the above-described embodiments, can make the crystallite dimension of the crystallite dimension of drive circuit area according to selective laser crystallization mode of the present invention greater than active luminous display area territory.Experiment shows: the crystallite dimension of drive circuit area is more than 1 μ m, and the size in active luminous display area territory is then about 0.2-1.0 μ m, and than the crystal boundary of regular drive circuit region carrier mobility is increased.In addition, though drive circuit area with the CW laser crystallization, large-area active luminous display area territory is with ELA technology crystallization fast, the time of therefore totally finishing crystallization is short.In sum, the present invention not only can improve TFT and electrically reach the uniformity, also can improve production capacity, reduces production costs.
In sum; though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; any person skilled in the art person; without departing from the spirit and scope of the present invention; when the variation that can make various equivalences or replacement, so protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.
Claims (10)
1. display floater comprises:
One substrate, this substrate comprise an active luminous display area territory and one drive circuit zone; And
One polysilicon layer is formed on this substrate, this polysilicon layer to should active luminous display area territory and this drive circuit area be one first polysilicon layer and one second polysilicon layer;
Wherein, the grain size of this second polysilicon layer is greater than the grain size of this first polysilicon layer.
2. display floater as claimed in claim 1 is characterized in that this first polysilicon layer is to use the quasi-molecule laser annealing mode and forms.
3. display floater as claimed in claim 1 is characterized in that this second polysilicon layer is to utilize the continuous wave laser annealing way to form.
4. display floater as claimed in claim 1 is characterized in that the grain mark of this second polysilicon layer is less than the grain mark of this first polysilicon layer.
5. display floater as claimed in claim 1 is characterized in that it is a low-temperature polysilicon film transistor organic LED display panel.
6. display floater as claimed in claim 1, the grain size that it is characterized in that this second polysilicon layer are greater than 1 μ m.
7. display floater as claimed in claim 1, the grain size that it is characterized in that this first polysilicon layer are between between 0.2 to 1 μ m.
8. active light emitting display panel comprises at least:
One substrate;
One scans holding wire, is arranged on this substrate;
One data signal line is arranged on this substrate and perpendicular to this and scans holding wire;
One power signal line is arranged on this substrate and with this data-signal line parallel and keep a distance;
One the first transistor is arranged on this substrate and the grid of this first transistor and this scan signal line couple, and the source electrode of this first transistor and this data signal line couple;
One transistor seconds is arranged on this substrate and the drain electrode of the grid of this transistor seconds and this first transistor couples, and the source electrode of this transistor seconds and this power signal line couple; And
One luminescence component is arranged on this substrate and couples with the drain electrode of this transistor seconds;
Wherein, this scan signal line, this data signal line, this power signal line and this luminescence component define an active luminous display area territory, and this scan signal line, this data signal line, this power signal line, this first transistor and this transistor seconds define the one drive circuit zone, this active luminous display area territory has one first polysilicon layer, this drive circuit area has one second polysilicon layer, wherein, the grain size of this second polysilicon layer is greater than the grain size of this first polysilicon layer.
9. active light emitting display panel as claimed in claim 8 is characterized in that this first polysilicon layer is to use the quasi-molecule laser annealing mode to form.
10. active light emitting display panel as claimed in claim 8, the grain mark of this second polysilicon layer are the grain marks that is less than this first polysilicon layer.
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| CNB2004101019529A CN100377386C (en) | 2004-12-15 | 2004-12-15 | Selective laser crystallization method and display panel manufactured by same |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101170076B (en) * | 2006-10-27 | 2011-05-18 | 奇美电子股份有限公司 | Manufacturing method of organic electroluminescent element and image display system |
| CN104037127A (en) * | 2014-06-11 | 2014-09-10 | 京东方科技集团股份有限公司 | Preparation method for polycrystalline silicon layer and display substrate, and display substrate |
| CN108074525B (en) * | 2016-11-11 | 2019-09-17 | 昆山国显光电有限公司 | Driving method, display panel and the display device of pixel circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1501336A (en) * | 2002-11-12 | 2004-06-02 | ����Sdi��ʽ���� | Flat panel display and manufacturing method thereof |
| CN1503376A (en) * | 2002-11-19 | 2004-06-09 | ����Sdi��ʽ���� | Thin film transistor and organic electroluminescent device using same |
| US20040224487A1 (en) * | 2001-06-07 | 2004-11-11 | Myoung-Su Yang | Amorphous silicon crystallization method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040224487A1 (en) * | 2001-06-07 | 2004-11-11 | Myoung-Su Yang | Amorphous silicon crystallization method |
| CN1501336A (en) * | 2002-11-12 | 2004-06-02 | ����Sdi��ʽ���� | Flat panel display and manufacturing method thereof |
| CN1503376A (en) * | 2002-11-19 | 2004-06-09 | ����Sdi��ʽ���� | Thin film transistor and organic electroluminescent device using same |
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