CN100375216C - Tripolar Field Emission Display with Bottom Gate Structure and Its Fabrication Process - Google Patents

Abstract

The invention relates to a field emission display with a three-pole structure of a carbon nanotube cathode with a bottom grid structure and its manufacturing process. The display includes a sealed vacuum chamber composed of a cathode panel, an anode panel and a glass enclosure. There are printed carbon nanotube cathodes and bottom gate structure control grids that control the electron emission of carbon nanotubes. There is a photolithographic tin indium oxide film layer on the anode panel and a phosphor layer prepared on the tin indium oxide film layer. , a bottom grid structure is fabricated on the cathode panel for controlling the electron emission of the carbon nanotube cathode, and has the advantages of simple structure, simple manufacturing process, low manufacturing cost, and stable and reliable manufacturing process.

Description

Tripolar Field Emission Display with Bottom Gate Structure and Its Fabrication Process

technical field

The invention belongs to the fields of vacuum science and technology, nano science and technology, flat display technology and microelectronic technology, and relates to the manufacture of devices for field emission flat panel displays, in particular to devices for field emission displays with a triode structure of carbon nanotube cathodes The content of production, in particular, relates to the production process of field emission flat display devices with bottom gate structure, carbon nanotube cathode, and triode structure.

Background technique

Carbon nanotubes are a special cold cathode material that can emit a large amount of electrons only under the action of an external voltage, which is determined by its special structure. For field emission flat display devices using carbon nanotubes as cathode materials, in order to reduce production costs to the greatest extent and reduce the operating voltage of the overall device, it is convenient to combine with conventional IC circuits to make a field with a three-pole structure. An emission flat display device is an inevitable choice.

In the carbon nanotube cathode field emission display device with a triode structure, the gate structure plays a necessary role in controlling the electron emission of the carbon nanotube cathode. The manufacturing process of the gate structure and the selection of the gate substrate material have very strict requirements. Among them, the choice of the structure of the control grid is also one of the key considerations of the researchers. At present, most flat panel display devices have selected the structure of the control grid above the carbon nanotube cathode. The strong control of the gate structure The effect is obvious. However, the formed gate current is relatively large, and the requirements for the material of the device are relatively high, and the cathode of the carbon nanotube is easy to be damaged and polluted to a certain extent during the manufacturing process of the device, which is its disadvantage.

At present, the materials used to make control grids by various manufacturing companies or research institutions are different, but most of them use special special materials and special manufacturing processes, which brings a series of problems. Problems, such as: high device manufacturing cost; complicated manufacturing process; too harsh manufacturing process conditions, unable to carry out large-scale manufacturing, etc.

In addition, it is also necessary to further reduce the manufacturing cost of the overall flat panel display device, so that the manufacturing process of the device is free from complexity, which is beneficial to commercial mass production.

Contents of the invention

The purpose of the present invention is to overcome the shortcomings of the above-mentioned field emission display and provide a three-pole field emission flat panel display with a bottom grid structure, stable and reliable manufacturing process, simple structure, high yield and low cost and its manufacture. craft.

The present invention mainly includes a sealed vacuum chamber composed of a cathode panel, an anode panel and a glass enclosure. On the cathode panel, there are printed carbon nanotube cathodes and a bottom gate structure control grid for controlling the electron emission of carbon nanotubes. On the anode panel, There is a photoetched tin indium oxide thin film layer and a phosphor layer prepared on the tin indium oxide thin film layer. It is characterized in that the gate structure is located at the bottom and both sides of the carbon nanotube cathode, and is used for controlling the electron emission of the carbon nanotube cathode.

The fixed position of the bottom grid structure in the present invention is installed and fixed on the cathode panel; the control grid of the bottom grid structure in the present invention is located at the bottom and both sides of the carbon nanotube cathode, and is used to control the electron emission of the carbon nanotube cathode; The substrate material of the bottom gate structure in the present invention is large, has quite good heat resistance and operability, and low-cost high-performance insulating material; The substrate material in the bottom gate structure in the present invention is glass, such as Soda-lime glass, borosilicate glass; the bottom control grid conductive strip in the bottom grid structure in the present invention is a silver paste strip, which can also be a tin-indium oxide thin film conductive layer, or can be chromium, nickel, gold, silver metal The silver paste bar in the bottom gate structure in the present invention is completed in conjunction with the screen printing process; the insulating isolation layer in the bottom gate structure in the present invention is an insulating paste layer, which is completed in conjunction with the screen printing process; The sidewall control grid conductive strips in the bottom gate structure in the invention are silver paste strips, which are completed in combination with the screen printing process; the sidewall control grid conductor strips and the bottom grid conductive strips in the bottom gate structure in the present invention The strips are interconnected; the sidewall control grid conductive strips in the bottom gate structure in the present invention are located on both sides of the carbon nanotube cathode conductive strips, and are isolated from each other by insulating paste; the bottom gate structure in the present invention The sidewall control grid conductive strip in the above can be higher than the fabrication plane of the carbon nanotube cathode conductive strip, also can be located on the same horizontal plane as the carbon nanotube cathode conductive strip, and can also be slightly lower than the fabrication plane of the carbon nanotube cathode conductive strip The sidewall control grid conductive strips in the bottom gate structure of the present invention can also be metal aluminum, gold, nickel, chromium, and are completed by conventional evaporation or sputtering processes; in the bottom gate structure of the present invention, it is necessary to Make the carbon nanotube cathode conductive strip on the insulating spacer; In the bottom grid structure in the present invention, print silver paste on the insulating spacer as the carbon nanotube cathode conductive strip, which is completed in conjunction with the screen printing process; The carbon nanotube cathode conductive strips in the bottom grid structure can be silver paste strips, and can also be aluminum, gold, nickel, chromium, and are completed by conventional evaporation or sputtering processes; the carbon nanotubes in the bottom grid structure in the present invention The trend of the nanotube cathode conductive strip is perpendicular to that of the bottom control grid conductive strip; the carbon nanotube cathode conductive strip and the sidewall control grid conductive strip in the bottom gate structure of the present invention are mutually isolated The distance between them is greater than or equal to the vertical distance between the carbon nanotube cathode conductive strip and the bottom control grid conductive strip; in the bottom gate structure in the present invention, an insulating protective layer needs to be printed again on the insulating isolation layer; The insulating protective layer in the bottom gate structure in the present invention is an insulating paste layer, which is completed in conjunction with the screen printing process; the insulating protective layer in the bottom gate structure in the present invention needs to be pre-prepared on the top of the carbon nanotube cathode conductive strip. Reserve the vacant part of the carbon nanotube cathode to prepare for the subsequent carbon nanotube cathode preparation and post-processing, and the rest are all covered with an insulating protective layer; the bottom gate structure in the present invention is made of substrate material glass, The bottom control grid conductive strip, the insulating isolation layer, the side wall control grid conductive strip, the carbon nanotube cathode conductive strip and the insulating protection layer are formed.

The bottom gate structure in the present invention is manufactured using the following process:

1) Preparation of substrate material glass [1]:

Scribing the overall substrate material glass;

2) Fabrication of the bottom control grid conductive strip [2]:

Combined with the screen printing process, print silver paste on the substrate material glass to form the bottom control grid conductive strip [2]; after baking (baking temperature: 150°C, holding time: 10 minutes), place it in a sintering furnace High temperature sintering (sintering temperature: 585°C, holding time: 10 minutes);

3) The making of insulation barrier [3]:

Combined with the screen printing process, the insulating paste is printed on the substrate material glass to form an insulating isolation layer [3]; after baking (baking temperature: 150°C, holding time: 10 minutes), it is placed in a sintering furnace for High temperature sintering (sintering temperature: 590°C, holding time: 10 minutes);

4) Fabrication of sidewall control grid conductive strips [4]:

Combined with the screen printing process, silver paste is printed on the substrate material glass to form sidewall control grid conductive strips [4]. After baking (baking temperature: 150° C., holding time: 10 minutes), it is placed in a sintering furnace for high-temperature sintering (sintering temperature: 585° C., holding time: 10 minutes). Since a vacant place has been reserved when the insulating isolating layer is made, the silver paste can be printed on the vacant place of the insulating isolating layer, and connected with the bottom control grid conductive strip [2]. Therefore, when a voltage is applied to the bottom control gate conductive strip, a voltage is simultaneously applied to the sidewall control gate conductive strip. Since the carbon nanotube cathode conductive strip is also printed on the insulating paste isolation layer, and the direction of the carbon nanotube cathode conductive strip is perpendicular to the direction of the bottom control grid conductive strip, so the side wall control grid conductive strip They are located on both sides of the carbon nanotube cathode conductive strip, and are isolated from each other by insulating paste.

5) Fabrication of carbon nanotube cathode conductive strip [5]:

Combined with the screen printing process, silver paste is printed on the insulating paste isolation layer [3] to form the carbon nanotube cathode conductive strip [5]. After baking (baking temperature: 150° C., holding time: 10 minutes), it is placed in a sintering furnace for high-temperature sintering (sintering temperature: 585° C., holding time: 10 minutes). Wherein, the direction of the carbon nanotube cathode conductive strip [5] is perpendicular to the direction of the bottom control grid conductive strip [2], and the carbon nanotube cathode conductive strip [5] and the sidewall control grid conductive strip [4] ] are separated from each other, and the distance between them is equal to the vertical distance between the carbon nanotube cathode conductive strip [5] and the bottom control grid conductive strip [2].

6) The making of insulating protective layer [6]:

Combined with the screen printing process, the insulating protective layer is printed again on the insulating isolation layer [6]. After baking (baking temperature: 150° C., holding time: 10 minutes), it is placed in a sintering furnace for high-temperature sintering (sintering temperature: 590° C., holding time: 10 minutes). It is required to reserve a space for the carbon nanotube cathode above the carbon nanotube cathode conductive strip, and cover the rest with an insulating slurry protective layer.

7) Treatment of glass surface

Clean the overall glass surface to remove impurities.

The carbon nanotube cathode field emission flat-panel display with the bottom gate structure among the present invention is made according to the following process:

1. Production of cathode plate:

1) Printing of carbon nanotube cathode [7]:

Combined with the screen printing process, the carbon nanotubes [7] are printed on the reserved space of the insulating protective layer.

2) Post-treatment of carbon nanotube [7] cathode

The printed CNTs [7] cathode is post-treated to improve the field emission properties of the CNTs.

2. Production of anode panels:

1) Clean the flat glass [8] to remove surface impurities;

2) Evaporate a layer of tin indium oxide [9] thin film on flat glass [8];

3) performing photolithography on the tin-indium oxide [9] thin film to form conductive strips;

4) In combination with the screen printing process, a layer of insulating paste [10] is printed on the non-display area of the conductive strip to prevent parasitic electron emission; after baking (baking temperature: 150°C, holding time: 5 minutes), Place in a sintering furnace for high-temperature sintering (sintering temperature: 580°C, holding time: 10 minutes);

5) Combined with the screen printing process, print the phosphor layer on the display area above the conductive strip [11]; bake in an oven (baking temperature: 120°C, holding time: 10 minutes);

3. Device assembly

Assemble the cathode panel, anode panel and glass enclosure [12] together, put the getter into the cavity, and fix it with low-melting glass powder. Apply low-melting point glass powder around the glass panel and fix it with clips.

5. Finished product production

Carry out the following packaging process for the assembled device: put the sample device into the oven for baking; put it in the sintering furnace for high-temperature sintering; perform exhaust and sealing of the device on the exhaust table, and clean it on the baking machine The getter inside the device is roasted and eliminated, and finally pins are added to form a finished product.

The present invention has following positive effect:

The control gate part in the bottom gate structure of the present invention is located at the bottom and both sides of the carbon nanotube cathode, and is used to control the field emission of electrons from the carbon nanotube cathode. When an appropriate voltage is applied to the control grid, the carbon nanotube cathode will emit a large number of electrons, and the emitted electrons will move directly to the anode at high speed under the action of the high voltage of the anode, and bombard the phosphor layer to emit light. The control grid is located on the bottom and both sides of the carbon nanotube cathode, and is separated from the carbon nanotube cathode by an insulating isolation layer, so the emitted electrons will not be intercepted by the control grid structure, so that the formed control grid The current is relatively small, which greatly improves the field emission efficiency of the carbon nanotube cathode, and also improves the luminous efficiency of the display device. In the bottom grid structure in the present invention, since the sidewall control grid conductive strip part is also made simultaneously on both sides of the carbon nanotube cathode conductive strip, the effect of further enhancing the electric field intensity at the top of the carbon nanotube is played, further improving The ability of the carbon nanotube cathode to emit electrons is improved, and the field emission performance of the display device is improved. In the bottom gate structure in the present invention, from the perspective of manufacturing process, the bottom gate structure is fabricated first, and then the carbon nanotube cathode is fabricated. After all the control grid structure parts have been manufactured, the carbon nanotube cathode part is made, so that the carbon nanotube cathode will not be disturbed by the control grid structure manufacturing process, and will not affect the carbon nanotube cathode. Contamination and damage occur in the cathode part of nanotubes, which greatly improves the success rate of device fabrication. The ability of the carbon nanotube cathode to field emit electrons is improved. In addition, in the manufacturing process of the bottom gate structure, no special structural materials are used, and no special device manufacturing process is used, which further reduces the manufacturing cost of the overall flat panel display device to a large extent and simplifies the device. The production process can be used for large-area device production, which is conducive to commercial mass production.

The three-pole carbon nanotube cathode field emission flat panel display with a bottom grid structure includes the following main components: a sealed vacuum chamber composed of a cathode panel, an anode panel and a glass enclosure, and printed carbon on the cathode panel. The nanotube cathode and the bottom gate structure control grid for controlling the carbon nanotube electron emission, a photoetched tin indium oxide thin film layer and a phosphor layer prepared on the tin indium oxide thin film layer are arranged on the anode panel. It is characterized in that the gate structure is located at the bottom and both sides of the carbon nanotube cathode, and is used for controlling the electron emission of the carbon nanotube cathode.

Description of drawings

Figure 1 shows a schematic diagram of the vertical structure of the bottom gate structure.

FIG. 2 shows a schematic diagram of the lateral structure of the bottom gate structure.

FIG. 3 shows a schematic structural view of an embodiment of a carbon nanotube cathode field emission flat panel display with a bottom gate structure.

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but the present invention is not limited to these embodiments.

As shown in Figures 1, 2, and 3, it includes a sealed vacuum chamber composed of cathode panel glass [1], anode panel glass [8] and glass enclosure [12]. There are printed on the cathode panel glass [1] The carbon nanotube cathode [7] and the bottom gate structure control grid for controlling the electron emission of carbon nanotubes [7], there is a photolithographic tin indium oxide film layer [9] on the anode panel glass [8] and prepared in Phosphor powder layer [11] above tin indium oxide thin film layer [9]. The control grid part is located at the bottom and both sides of the carbon nanotube cathode, and is used to control the electron emission of the carbon nanotube cathode. The control grid parts on both sides have enhanced effect on the electron emission of the carbon nanotube cathode. While further reducing the gate current, improving the field emission performance of the carbon nanotube cathode, and improving the field emission efficiency of the display device, it can further reduce the manufacturing cost of the overall flat panel device and simplify the overall device manufacturing process and manufacturing process.

The bottom gate structure in the present invention is manufactured using the following process:

1) Preparation of substrate material glass [1]:

Scribing the overall substrate material glass;

2) Fabrication of the bottom control grid conductive strip [2]:

Combined with the screen printing process, print silver paste on the substrate material glass to form the bottom control grid conductive strip [2]; after baking (baking temperature: 150°C, holding time: 10 minutes), place it in a sintering furnace High temperature sintering (sintering temperature: 585°C, holding time: 10 minutes);

3) The making of insulation barrier [3]:

Combined with the screen printing process, the insulating paste is printed on the substrate material glass to form an insulating isolation layer [3]; after baking (baking temperature: 150°C, holding time: 10 minutes), it is placed in a sintering furnace for High temperature sintering (sintering temperature: 590°C, holding time: 10 minutes);

4) Fabrication of sidewall control grid conductive strips [4]:

Combined with the screen printing process, silver paste is printed on the substrate material glass to form sidewall control grid conductive strips [4]. After baking (baking temperature: 150° C., holding time: 10 minutes), it is placed in a sintering furnace for high-temperature sintering (sintering temperature: 585° C., holding time: 10 minutes). Since a vacant place has been reserved when the insulating isolating layer is made, the silver paste can be printed on the vacant place of the insulating isolating layer, and connected with the bottom control grid conductive strip [2]. Therefore, when a voltage is applied to the bottom control gate conductive strip, a voltage is simultaneously applied to the sidewall control gate conductive strip. Since the carbon nanotube cathode conductive strip is also printed on the insulating paste isolation layer, and the direction of the carbon nanotube cathode conductive strip is perpendicular to the direction of the bottom control grid conductive strip, so the side wall control grid conductive strip They are located on both sides of the carbon nanotube cathode conductive strip, and are isolated from each other by insulating paste.

5) Fabrication of carbon nanotube cathode conductive strip [5]:

Silver paste is printed on the insulating paste separation layer [3] to form a carbon nanotube cathode conductive strip [5]. After baking (baking temperature: 150° C., holding time: 10 minutes), it is placed in a sintering furnace for high-temperature sintering (sintering temperature: 585° C., holding time: 10 minutes). Wherein, the direction of the carbon nanotube cathode conductive strip [5] is perpendicular to the direction of the bottom control grid conductive strip [2], and the carbon nanotube cathode conductive strip [5] and the sidewall control grid conductive strip [4] ] are separated from each other, and the distance between them is equal to the vertical distance between the carbon nanotube cathode conductive strip [5] and the bottom control grid conductive strip [2].

6) The making of insulating protective layer [6]:

Combined with the screen printing process, the insulating protective layer is printed again on the insulating isolation layer [6]. After baking (baking temperature: 150° C., holding time: 10 minutes), it is placed in a sintering furnace for high-temperature sintering (sintering temperature: 590° C., holding time: 10 minutes). It is required to reserve a space for the carbon nanotube cathode above the carbon nanotube cathode conductive strip, and cover the rest with an insulating slurry protective layer.

7) Treatment of glass surface

Clean the overall glass surface to remove impurities.

The carbon nanotube cathode field emission flat-panel display with the bottom gate structure among the present invention is made according to the following process:

1. Production of cathode plate:

1) Printing of carbon nanotube cathode [7]:

Combined with the screen printing process, the carbon nanotubes [7] are printed on the reserved space of the insulating protective layer.

2) Post-treatment of carbon nanotube [7] cathode

The printed CNTs [7] cathode is post-treated to improve the field emission properties of the CNTs.

2. Production of anode panels:

1) Clean the flat glass [8] to remove surface impurities;

2) Evaporate a layer of tin indium oxide [9] thin film on flat glass [8];

3) performing photolithography on the tin-indium oxide [9] thin film to form conductive strips;

4) In combination with the screen printing process, a layer of insulating paste [10] is printed on the non-display area of the conductive strip to prevent parasitic electron emission; after baking (baking temperature: 150°C, holding time: 5 minutes), Place in a sintering furnace for high-temperature sintering (sintering temperature: 580°C, holding time: 10 minutes);

5) Combined with the screen printing process, print the phosphor layer on the display area above the conductive strip [11]; bake in an oven (baking temperature: 120°C, holding time: 10 minutes);

3. Device assembly

Assemble the cathode panel, anode panel and glass enclosure [12] together, put the getter into the cavity, and fix it with low-melting glass powder. Apply low-melting point glass powder around the glass panel and fix it with clips.

5. Finished product production

Carry out the following packaging process for the assembled device: put the sample device into the oven for baking; put it in the sintering furnace for high-temperature sintering; perform exhaust and sealing of the device on the exhaust table, and clean it on the baking machine The getter inside the device is roasted and eliminated, and finally pins are added to form a finished product.

Claims (7)

1. A three-pole field emission display with a bottom grid structure, comprising a sealed vacuum chamber formed by a cathode panel [1], an anode panel [8] and a glass enclosure [12], and printed on the cathode panel [1] The carbon nanotube cathode [7] and the bottom gate structure control grid that controls the electron emission of the carbon nanotube cathode [7], there is a photolithographic tin indium oxide film layer [9] on the anode panel [8] and prepared in The phosphor layer [11] above the tin indium oxide thin film layer [9] is characterized in that: the bottom gate structure is located at the bottom and both sides of the carbon nanotube cathode, and is used to control the electron emission of the carbon nanotube cathode. The grid structure consists of cathode panel [1], bottom control grid conductive strip [2], insulating spacer [3], side wall control grid conductive strip [4], carbon nanotube cathode conductive strip [5] and insulating protective layer [6], the bottom control grid conductive strip [2] is installed and fixed on the cathode panel, the side wall control grid conductive strip in the bottom grid structure is a silver paste strip, the side wall control grid conductive strip and the bottom control The grid conductive strips are connected to each other, the side wall control grid conductive strips are located on both sides of the carbon nanotube cathode conductive strips, and are isolated from each other by insulating paste, the side wall control grid conductive strips are higher than the carbon nanotube cathode The fabrication plane of the conductive strip is either located on the same level as the carbon nanotube cathode conductive strip, or is lower than the fabrication plane of the carbon nanotube cathode conductive strip. 2 . The triode field emission display with bottom gate structure according to claim 1 , wherein the substrate material of the bottom gate structure is soda lime glass or borosilicate glass. 3 . 3. The triode field emission display with bottom gate structure as claimed in claim 1, characterized in that: the bottom control grid conductive strip [2] in the bottom gate structure is a silver paste strip, which is combined with a screen printing process The completed one is either a tin-indium oxide thin film conductive layer, or chromium, nickel, gold, silver metal, and the insulating isolation layer [3] in the bottom gate structure is an insulating paste layer. 4. The three-pole field emission display of bottom gate structure as claimed in claim 1, is characterized in that: the sidewall control gate conductive bar [4] in described bottom gate structure is metal aluminum, gold, nickel, chromium one. 5. the triode field emission display of bottom gate structure as claimed in claim 1, is characterized in that: in described bottom gate structure, make carbon nanotube cathode conductive strip on insulating spacer layer, the carbon nanotube in the bottom gate structure The cathode conductive strip is silver paste, or aluminum, gold, nickel, chromium, and the direction of the carbon nanotube cathode conductive strip is perpendicular to the direction of the bottom control grid conductive strip. The carbon nanotube cathode conductive strip and the side wall control The gate conductive strips are mutually isolated, and the distance between them is greater than or equal to the vertical distance between the carbon nanotube cathode conductive strip and the bottom control grid conductive strip. 6. The triode field emission display with bottom gate structure as claimed in claim 1, characterized in that: in the bottom gate structure, an insulating protective layer [6] is printed on the insulating isolation layer [3], and in the bottom gate structure The insulating protective layer is an insulating slurry layer, and the insulating protective layer reserves the vacancy of the carbon nanotube cathode above the carbon nanotube cathode conductive strip, preparing for the subsequent preparation and post-processing of the carbon nanotube cathode, and the rest All are covered with an insulating layer. 7. A manufacturing process of a triode field emission display with a bottom gate structure, characterized in that: the bottom gate structure is manufactured using the following process: 1) Preparation of substrate material glass [1]: Scribing the overall substrate material glass; 2) Fabrication of the bottom control grid conductive strip [2]: Combined with the screen printing process, print silver paste on the substrate material glass to form the bottom control grid conductive strip [2]; after baking, the baking temperature: 150 ° C, holding time: 10 minutes, after that, place it in the sintering furnace Carry out high temperature sintering in medium temperature, sintering temperature: 585°C, holding time: 10 minutes; 3) The making of insulation barrier [3]: Combined with the screen printing process, the insulating paste is printed on the substrate material glass to form an insulating isolation layer [3]; after baking, the baking temperature is 150 ° C, and the holding time is 10 minutes. After that, it is placed in a sintering furnace. High temperature sintering, sintering temperature: 590°C, holding time: 10 minutes; 4) Fabrication of sidewall control grid conductive strips [4]: Combined with the screen printing process, print silver paste on the substrate material glass to form sidewall control grid conductive strips [4], after baking, baking temperature: 150 ° C, holding time: 10 minutes, after that, place it in the sintering Carry out high-temperature sintering in the furnace, sintering temperature: 585 ° C, holding time: 10 minutes, since the vacancy has been reserved when making the insulating isolation layer, the silver paste can be printed on the vacant part of the insulating isolation layer, and The bottom control grid conductive strip [2] is connected, so when a voltage is applied to the bottom control grid conductive strip, a voltage is also applied to the sidewall control grid conductive strip at the same time, because the insulating paste isolation layer The carbon nanotube cathode conductive strip is also printed on the top of the carbon nanotube cathode conductive strip, and the direction of the carbon nanotube cathode conductive strip is perpendicular to the direction of the bottom control grid conductive strip, so the side wall control grid conductive strip is located on the carbon nanotube cathode conductive strip. on both sides, and are isolated from each other by insulating paste, 5) Fabrication of carbon nanotube cathode conductive strip [5]: Combined with the screen printing process, print silver paste on the insulating paste isolation layer [3] to form a carbon nanotube cathode conductive strip [5], after baking, the baking temperature: 150 ° C, holding time: 10 minutes, after that, Place in a sintering furnace for high-temperature sintering, sintering temperature: 585°C, holding time: 10 minutes, wherein the direction of the carbon nanotube cathode conductive strip [5] is perpendicular to the direction of the bottom control grid conductive strip [2] , and the carbon nanotube cathode conductive strip [5] and the side wall control grid conductive strip [4] are separated from each other, and the distance between them is equal to the carbon nanotube cathode conductive strip [5] and the bottom control grid conductive strip [5]. the vertical distance between bars [2], 6) The making of insulating protective layer [6]: Combined with the screen printing process, the insulating protective layer [6] is printed again on the insulating isolation layer, and after baking, the baking temperature is 150 ° C, and the holding time is 10 minutes. After that, it is placed in a sintering furnace for high-temperature sintering. : 590°C, holding time: 10 minutes, it is required to reserve a space for the carbon nanotube cathode above the carbon nanotube cathode conductive strip, and cover the rest with a protective layer of insulating paste. 7) Treatment of glass surface Clean the overall glass surface to remove impurities.