CN100369339C - Silicon-based DBR laser and its technology compatible with standard integrated circuit technology - Google Patents
Silicon-based DBR laser and its technology compatible with standard integrated circuit technology Download PDFInfo
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- CN100369339C CN100369339C CNB2005101052610A CN200510105261A CN100369339C CN 100369339 C CN100369339 C CN 100369339C CN B2005101052610 A CNB2005101052610 A CN B2005101052610A CN 200510105261 A CN200510105261 A CN 200510105261A CN 100369339 C CN100369339 C CN 100369339C
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- 238000005516 engineering process Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 6
- 229910052710 silicon Inorganic materials 0.000 title abstract description 6
- 239000010703 silicon Substances 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 238000001259 photo etching Methods 0.000 claims description 33
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 238000002955 isolation Methods 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000005269 aluminizing Methods 0.000 claims description 3
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- JOXCDOKKASTCHR-UHFFFAOYSA-N [Si](O)(O)(O)O.[P] Chemical compound [Si](O)(O)(O)O.[P] JOXCDOKKASTCHR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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Abstract
本发明涉及半导体发光器件技术领域，特别是一种与标准集成电路工艺兼容的硅基DBR激光器及其工艺。本发明采用SOI晶片为衬底，利用与标准集成电路工艺兼容的工艺制作，有源区采用PN结发光二极管结构，有源区两侧的无源区内分别设置DBR布拉格全反射器和DBR半反射器，构成谐振腔。
The invention relates to the technical field of semiconductor light-emitting devices, in particular to a silicon-based DBR laser compatible with standard integrated circuit technology and its technology. The invention adopts SOI wafer as the substrate and is manufactured by a process compatible with the standard integrated circuit process. The active area adopts a PN junction light-emitting diode structure, and DBR Bragg total reflectors and DBR half-reflectors are respectively arranged in the passive areas on both sides of the active area. The reflectors form the resonant cavity.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly a kind of silica-based DBR laser and technology thereof of and standard ic process compatibility.
Background technology
Along with reducing rapidly of standard integrated circuit technology characteristic size, the density and the expense of device are greatly improved.Yet energy loss on the electricity interlinkage line and electromagnetic interference have become the bottleneck of the silica-based microelectronic integrated circuit development of restriction.The light interconnection is expected to become the effective way that addresses this problem according to its clear superiority on transmission bandwidth, antijamming capability and energy consumption.Silicon materials are main materials of microelectronic integrated circuit technology, have brought into play very important effect aspect very lagre scale integrated circuit (VLSIC).Utilize silicon as stock, adopt ripe standard integrated circuit technology to make opto-electronic device and optoelectronic integrated circuit, have incomparable advantage on the cost He on the technical maturity, will become the preferred option of making opto chip and solving the electrical interconnection problem.
With the silica-based light emitting devices of standard ic process compatibility is that the silicon based opto-electronics subclass becomes the important component part in the loop.Since this device have be suitable for integrated, cost is low, be easy to advantage such as large-scale production, the optic electric interface as chip chamber or chip internal in optical interconnection system of future generation has boundless application prospect.But how strengthening electro-optical efficiency, make and to be suitable for integrated silica-based light emitting devices, is to need the difficult problem that solves in the research.The silica-based DBR laser of of the present invention and standard ic process compatibility is to utilize the SOI wafer to do substrate, makes the PN junction light-emitting diode on epitaxial loayer.The diode both sides make distribution Bragg reflector respectively, form resonant cavity.When reaching threshold condition, can realize efficient laser output.And this device adopts DBR as resonant cavity, is suitable for becoming with the silicon based opto-electronics subclass in the loop other device to realize integrated on the structure.
Summary of the invention
The purpose of this invention is to provide a kind of and the silica-based DBR laser standard ic process compatibility, its have manufacture craft maturation, cost low, be suitable for integrated, be easy to advantage such as large-scale production, in light interconnection of future generation and total silicon optical chip, have boundless application prospect.
It is substrate that the present invention adopts the SOI wafer, utilizes with the technology of standard ic process compatibility and makes, and active area adopts the PN junction light emitting diode construction, and DBR full-reflector and DBR semi-reflecting mirror are set respectively in the passive region of active area both sides, constitutes resonant cavity.
The present invention realizes by the following method:
A kind of silica-based DBR laser with the standard ic process compatibility of the present invention, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, constitute resonant cavity, comprising:
One SOI substrate;
One PN junction light-emitting diode is made N on the top layer P of SOI substrate type epitaxial loayer
+District and P
+The district, N
+Broken line structure, P make in the district
+The district is strip structure, N
+The district forms N with the top layer P type epitaxial loayer of SOI substrate
+The P knot, N
+District, P
+Metal electrode is drawn in the district respectively;
One DBR full-reflector utilizes photoetching process to make the Bragg grating full-reflector on the top layer P of SOI substrate type epitaxial loayer, at inner λ/4 phase-shifted regions of introducing of grating;
One DBR semi-reflecting mirror utilizes photoetching process to make the Bragg grating semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer, is used for forming resonant cavity with the DBR full-reflector output laser;
Silica-based DBR laser both sides make isolation channel respectively, and this isolation channel carries out some optical confinement on DBR laser resonant cavity two side directions, prevent the light signal leakage;
Outer SiO
2The buried regions SiO of layer and SOI substrate
2Layer with the buried regions SiO of SOI substrate
2Carry out some optical confinement on the vertical direction in the plane at laminar surface place, prevent that light signal from revealing.
A kind of silica-based DBR laser fabrication technology with the standard ic process compatibility of the present invention, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, the main technique step is as follows:
(1) prepares the SOI wafer;
(2) long thin oxide layer, deposit Si
3N
4
(3) active area photoetching carves P
+District and N
+The district;
(4) place photoetching carves the place hand-hole, and the place is injected;
(5) the long field oxide layer floats SiO
2And Si
3N
4, long then thin oxide layer;
(6) P
+District's photoetching carves P
+The district, boron injects, and forms P
+The district;
(7) N
+District's photoetching carves N
+The district, phosphorus injects, and forms N
+The district;
(8) photoetching carves the DBR grating region;
(9) etching DBR full-reflector and DBR semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer;
(10) long thin oxide layer;
(11) photoetching carves the isolation channel zone in DBR laser resonant cavity both sides;
(12) deep erosion carves isolation channel;
The outer SiO of (13) deposit
2Layer;
(14) long phosphor silicic acid glass-layer;
(15) fairlead photoetching;
(16) aluminum lead photoetching, the electrode of aluminizing;
Wherein, N
+District's doping content is 1 * 10
19Cm
-3, P
+District's doping content is 1 * 10
19Cm
-3
Description of drawings
Fig. 1 is the silica-based DBR laser vertical view with the standard ic process compatibility;
Fig. 2 is and the silica-based DBR laser profile of standard ic process compatibility (A-A ').Outer field SiO does not draw among the figure
2Layer and metal level;
Fig. 3 is and the silica-based DBR laser profile of standard ic process compatibility (B-B ').
Embodiment
The present invention is a kind of and silica-based DBR laser and technology thereof the standard ic process compatibility, and its concrete structure sees also Figure of description, comprising:
One SOI substrate;
One PN junction light-emitting diode, N
+Broken line structure, P make in the district
+The district is strip structure, N
+The district forms N with P type epitaxial loayer
+The P knot, N
+District, P
+Metal electrode is drawn in the district respectively;
One DBR full-reflector utilizes photoetching process to make the Bragg grating reflector on epitaxial loayer, at inner λ/4 phase-shifted regions of introducing of grating;
One DBR semi-reflecting mirror utilizes photoetching process to make the Bragg grating reflector on epitaxial loayer, is used for forming resonant cavity with DBR strong reflection device output laser.
Silica-based DBR laser both sides make isolation channel respectively, can (shown in Figure of description) carry out some optical confinement on the Y direction, prevent the light signal leakage.
Outer SiO
2The layer and the buried regions SiO of SOI substrate
2Layer (shown in Figure of description) on the Z direction carries out some optical confinement, prevents the light signal leakage.
The technology of employing of the present invention and standard ic process compatibility, the SOI wafer of at first selecting bonding technology to make.Require the SiO of wafer
2Buried regions is 1 μ m, and P type epitaxy layer thickness is 2 μ m.On P type epitaxial loayer, make N respectively
+District and P
+The district, N
+The district is designed to broken line shape, as shown in Figure 1.Adopt lithographic technique to make the DBR reflector, structure as shown in Figure 1 and Figure 2.Near P
+What distinguish a side is the DBR full-reflector, in the inner introducing of full-reflector λ/4 phase shifts.Near N
+What distinguish a side is the DBR semi-reflecting mirror, forms resonant cavity with the DBR full-reflector, and output laser.Adopt the deep reaction ion etching technology at silica-based DBR laser both sides etching isolation channel, as shown in figures 1 and 3.
After device architecture completes, the outer SiO of deposit
2Layer.Isolation channel can carry out some optical confinement on the Y direction, prevent the light signal leakage.Simultaneously, outer SiO
2The layer and the buried regions SiO of SOI substrate
2Layer (shown in Figure of description) on the Z direction carries out some optical confinement, prevents the light signal leakage.Utilize photoetching technique to carve fairlead, metallized electrode.P
+The district connects metal electrode 1, is ohmic contact, as shown in Figure 2, and this electrode grounding; N
+The district connects metal electrode 2, and this electrode connects positive voltage, N
+The district forms N with P type epitaxial loayer
+The P diode will form depletion region under reverse voltage, charge carrier generation radiation recombination just produces photon.This device is horizontal mode of operation, and under applied voltage, charge carrier moves on directions X, the light of generation is propagated along directions X, in the resonant cavity of DBR full-reflector and the formation of DBR semi-reflecting mirror, produce stimulated radiation and amplify, produce laser, export through the DBR semi-reflecting mirror.
The silica-based DBR laser fabrication technology of of the present invention and standard ic process compatibility, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, the main technique step is as follows:
(1) prepares the SOI wafer;
(2) long thin oxide layer, deposit Si
3N
4
(3) active area photoetching carves P
+District and N
+The district;
(4) place photoetching carves the place hand-hole, and the place is injected;
(5) long field oxide floats SiO
2And Si
3N
4, long then thin oxygen;
(6) P
+District's photoetching carves P
+The district, boron injects, and forms P
+The district;
(7) N
+District's photoetching carves N
+The district, phosphorus injects, and forms N
+The district;
(8) photoetching carves the DBR grating region;
(9) etching DBR full-reflector and DBR semi-reflecting mirror on epitaxial loayer;
(10) long thin oxygen;
(11) photoetching carves the isolation channel zone;
(12) deep erosion carves isolation channel;
The outer SiO of (13) deposit
2Layer;
(14) long PSG;
(15) fairlead photoetching;
(16) aluminum lead photoetching, the electrode of aluminizing;
Wherein, N
+District's doping content is 1 * 10
19Cm
-3, P
+District's doping content is 1 * 10
19Cm
-3
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, be manufactured with source region PN junction light emitting diode construction, make DBR full-reflector and DBR semi-reflecting mirror in the passive region, make silica-based DBR laser both sides isolation channel, all adopt technology with the standard ic process compatibility.
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, the DBR full-reflector utilizes photoetching process to make the DBR full-reflector on epitaxial loayer, at the inner introducing of grating λ/4 phase-shifted regions.
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, the DBR semi-reflecting mirror utilizes photoetching process to make the DBR semi-reflecting mirror on epitaxial loayer, is used for and DBR strong reflection device forms resonant cavity, exports laser.
The silica-based DBR laser fabrication technology of described and standard ic process compatibility, silica-based DBR laser both sides make isolation channel respectively, can carry out some optical confinement on the Y direction, prevent that light signal from revealing.
Claims (2)
1. silica-based DBR laser with the standard ic process compatibility, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, constitute resonant cavity, comprising:
One SOI substrate;
One PN junction light-emitting diode is made N on the top layer P of SOI substrate type epitaxial loayer
+District and P
+The district, N
+Broken line structure, P make in the district
+The district is strip structure, N
+The district forms N with the top layer P type epitaxial loayer of SOI substrate
+The P knot, N
+District, P
+Metal electrode is drawn in the district respectively;
One DBR full-reflector utilizes photoetching process to make the Bragg grating full-reflector on the top layer P of SOI substrate type epitaxial loayer, at inner λ/4 phase-shifted regions of introducing of grating;
One DBR semi-reflecting mirror utilizes photoetching process to make the Bragg grating semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer, is used for forming resonant cavity with the DBR full-reflector output laser;
Silica-based DBR laser both sides make isolation channel respectively, and this isolation channel carries out some optical confinement on DBR laser resonant cavity two side directions, prevent the light signal leakage;
Outer SiO
2The buried regions SiO of layer and SOI substrate
2Layer with the buried regions SiO of SOI substrate
2Carry out some optical confinement on the vertical direction in the plane at laminar surface place, prevent that light signal from revealing.
2. silica-based DBR laser fabrication technology with the standard ic process compatibility, it is characterized in that, adopting the SOI wafer is substrate, utilize with the technology of standard ic process compatibility and make, active area adopts the PN junction light emitting diode construction, make distribution bragg full-reflector and distribution bragg semi-reflecting mirror in the passive region at active area two ends respectively, the main technique step is as follows:
(1) prepares the SOI wafer;
(2) long thin oxide layer, deposit Si
3N
4
(3) active area photoetching carves P
+District and N
+The district;
(4) place photoetching carves the place hand-hole, and the place is injected;
(5) the long field oxide layer floats SiO
2And Si
3N
4, long then thin oxide layer;
(6) P
+District's photoetching carves P
+The district, boron injects, and forms P
+The district;
(7) N
+District's photoetching carves N
+The district, phosphorus injects, and forms N
+The district;
(8) photoetching carves the DBR grating region;
(9) etching DBR full-reflector and DBR semi-reflecting mirror on the top layer P of SOI substrate type epitaxial loayer;
(10) long thin oxide layer;
(11) photoetching carves the isolation channel zone in DBR laser resonant cavity both sides;
(12) deep erosion carves isolation channel;
The outer SiO of (13) deposit
2Layer;
(14) long phosphor silicic acid glass-layer;
(15) fairlead photoetching;
(16) aluminum lead photoetching, the electrode of aluminizing;
Wherein, N
+District's doping content is 1 * 10
19Cm
-3, P
+District's doping content is 1 * 10
19Cm
-3
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101052610A CN100369339C (en) | 2005-09-28 | 2005-09-28 | Silicon-based DBR laser and its technology compatible with standard integrated circuit technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101052610A CN100369339C (en) | 2005-09-28 | 2005-09-28 | Silicon-based DBR laser and its technology compatible with standard integrated circuit technology |
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| Publication Number | Publication Date |
|---|---|
| CN1941525A CN1941525A (en) | 2007-04-04 |
| CN100369339C true CN100369339C (en) | 2008-02-13 |
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ID=37959406
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102540505B (en) * | 2012-01-13 | 2014-12-31 | 中国科学院半导体研究所 | SOI (silicon on insulator) based electrooptical modulator based on symmetrical and vertical grating coupling |
| GB2523383B (en) * | 2014-02-24 | 2016-09-14 | Rockley Photonics Ltd | Detector remodulator |
| CN105576384B (en) * | 2016-01-15 | 2019-10-29 | 南京邮电大学 | A kind of tunable Tamm plasma perfection absorber of multichannel |
| US11367998B2 (en) | 2017-12-15 | 2022-06-21 | Shanghai Jiao Tong University | Method for preparing ER- or ER/O-doped silicon-based luminescent material emitting communication band at room temperature, the luminescent material and ER- or ER/O-SI lasers |
| CN109936048B (en) * | 2017-12-15 | 2024-02-06 | 上海交通大学 | A method for preparing an erbium- or erbium-oxygen-doped silicon-based room temperature communication band luminescent material, the luminescent material and a silicon-based laser |
| CN114815238A (en) * | 2021-01-29 | 2022-07-29 | 华为技术有限公司 | Waveguide module and display system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4464762A (en) * | 1982-02-22 | 1984-08-07 | Bell Telephone Laboratories, Incorporated | Monolithically integrated distributed Bragg reflector laser |
| US6121068A (en) * | 1997-02-10 | 2000-09-19 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
| WO2002079834A2 (en) * | 2001-03-31 | 2002-10-10 | Bookham Technology Plc | Optical filters |
| US20050063437A1 (en) * | 2003-09-22 | 2005-03-24 | Ray-Hua Horng | Vertical-cavity surface emitting laser diode and method for producing the same |
-
2005
- 2005-09-28 CN CNB2005101052610A patent/CN100369339C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4464762A (en) * | 1982-02-22 | 1984-08-07 | Bell Telephone Laboratories, Incorporated | Monolithically integrated distributed Bragg reflector laser |
| US6121068A (en) * | 1997-02-10 | 2000-09-19 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
| WO2002079834A2 (en) * | 2001-03-31 | 2002-10-10 | Bookham Technology Plc | Optical filters |
| US20050063437A1 (en) * | 2003-09-22 | 2005-03-24 | Ray-Hua Horng | Vertical-cavity surface emitting laser diode and method for producing the same |
Non-Patent Citations (1)
| Title |
|---|
| A silicon light emitting devices in standard CMOStechnology. Hongda，Chen，et，al.2004 1st IEEE International Conference on Group IV Photonics. 2004 * |
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| CN1941525A (en) | 2007-04-04 |
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