CN100367101C - Liquid crystal display device having a plurality of pixel electrodes - Google Patents
Liquid crystal display device having a plurality of pixel electrodes Download PDFInfo
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- CN100367101C CN100367101C CNB2004100586353A CN200410058635A CN100367101C CN 100367101 C CN100367101 C CN 100367101C CN B2004100586353 A CNB2004100586353 A CN B2004100586353A CN 200410058635 A CN200410058635 A CN 200410058635A CN 100367101 C CN100367101 C CN 100367101C
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- pixel
- liquid crystal
- counter electrode
- signal line
- electrode
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000000694 effects Effects 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 230000001681 protective effect Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 11
- 239000012780 transparent material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 230000000007 visual effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 2
- 239000011241 protective layer Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000009413 insulation Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000544 Rb alloy Inorganic materials 0.000 description 2
- LADUOVJEPCTFNX-UHFFFAOYSA-N [Rb].[AlH3] Chemical compound [Rb].[AlH3] LADUOVJEPCTFNX-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- KNVAYBMMCPLDOZ-UHFFFAOYSA-N propan-2-yl 12-hydroxyoctadecanoate Chemical group CCCCCCC(O)CCCCCCCCCCC(=O)OC(C)C KNVAYBMMCPLDOZ-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
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- Liquid Crystal (AREA)
Abstract
The invention relates to a liquid crystal display device, which mainly comprises a substrate, a common line, a gate line, a thin film transistor, a signal line, a protective layer, a planarization insulating layer above the protective layer, a plurality of pixel electrodes and a plurality of counter electrodes above the planarization insulating layer; the starting point and the end point of the pixel electrode and the counter electrode are positioned at the same side of a pixel area defined by the gate line and the signal line, and the pixel electrode and the counter electrode are made of transparent conductive materials, so that better penetration rate can be obtained. The pixel electrodes and the counter electrodes are crossed and parallel and are horizontally arranged in the direction parallel to the signal lines, so that the effect of wide visual angle of the panel is achieved.
Description
Technical field
The present invention relates to a kind of liquid crystal indicator.
Background technology
Exemplary lcd (LCD) is to utilize the optical anisotropy and the polarisation character of liquid crystal molecule.Liquid crystal molecule is arranged because of its thin microscler shape clear and definite directed grade.The Liquid Crystal Molecules Alignment direction can be by liquid crystal molecule being applied electric field and being controlled.Change speech, when the electric field orientation changes, the arrangement of liquid crystal molecule also changes.Optical anisotropy because of the liquid crystal molecule of this arrangement refracts on this orientation of this liquid crystal molecule owing to incident light, thereby data capable of displaying image.
Among the known LCD, liquid crystal molecule is that mat vertically applies electric field and arranges, and its advantage is for having high transmittance and high aperture.But it is that the visual angle is narrower that mat vertically applies the shortcoming that electric field makes the LCD of Liquid Crystal Molecules Alignment.In order to overcome the shortcoming at this narrow visual angle, copline switching (In-plane switching, IPS) panel of LCD and develop.The electric field that this IPS LCD panel applies is parallel to substrate, and it is different from stable twisted nematic (TN) or STN Super TN type (STN) LCD panel.These IPS LCD use transverse electric field owing to pixel electrode and common electrode are formed on the same substrate.This kind IPS LCD device has the advantage of wide viewing angle and low color dispersion.
(In-Plane Switching mode, IPS) liquid crystal indicator generally comprises the parallel to each other and upper and lower substrate separated and is clipped in liquid crystal between this upper and lower substrate the copline switch type.Infrabasal plate is provided with pixel electrode and common electrode parallel to each other and that separate.The long axis direction of this liquid crystal will be because of the transverse electric field twisted arrangement between this pixel electrode and common electrode.But known IPSLCD is to use non-transparent metals to be used as counter electrode and pixel electrode, as described in U.S. Patent Publication US2002-0158994, the pixel region of disclosed LCD is constructed as shown in Figure 1 in this patent, and the pixel (pixel) of this composition LCD part comprises a drain line A, gate line (gateline) M, common electrode B, pixel electrode (drain layer) F, counter electrode (counter electrode) is C (ITO), pixel electrode (ITO) D, and be arranged on source electrode K, the thin film transistor (TFT) (TFT) of drain electrode H and semiconductor layer L infall.Also comprise the contact hole E of contact hole G, pixel electrode (ITO) D of pixel electrode (drain layer) F and the contact hole I of drain line A herein.Though it can provide wide viewing angle, to simplify manufacture process and improve reliability, it has a pixel electrode to be made of opaque conducting metal in the middle of pixel region (pixelregion), so easily causes the reduction of aperture opening ratio, and then influences the briliancy performance.
In view of the above, still need to develop a kind of IPS LCD that improves aperture opening ratio and briliancy that has.
Summary of the invention
Fundamental purpose of the present invention provides a kind of liquid crystal indicator, and wherein counter electrode and pixel electrode constitute by the transparent conductivity material, and can promote the panel aperture opening ratio effectively, and utilizes a planarization insulating layer to reduce interelectrode influencing each other.
Another object of the present invention provides a kind of liquid crystal indicator, and counter electrode and pixel electrode are arranged on the same substrate, can reduce outside the influence of vertical electric field for liquid crystal, for the manufacture process aligning accuracy big margin is arranged.
Another object of the present invention provides a kind of liquid crystal indicator, increases planarization insulating layer in pixel design, except increasing the flattening surface effect, can reduce the influence for liquid crystal of line of electric force that the bottom metal line caused indirectly.
According to the present invention, a kind of liquid crystal indicator, mainly comprise a substrate, the gate line that defines pixel region on this substrate and signal line, the thin film transistor (TFT) on gate line and the signal line cross section, and common line, protective seam, protective seam above planarization insulating layer and a plurality of pixel electrodes above planarization insulating layer and a plurality of counter electrode; Wherein the starting point of this pixel electrode and this counter electrode and terminal point are positioned at the same side of this pixel region, and the material of this pixel electrode and this counter electrode is the electrically conducting transparent material, wherein, this common line be that opaque metal layer constitutes, it is positioned at pixel electrode one side and near signal line or gate line, not cut apart or cross over the pixel region photic zone and make the transmission region of whole pixel region be a complete large area region.
These purposes of the present invention and other purpose, characteristics and advantage will more clear by following explanation conjunction with figs. to being familiar with the person skilled in art.
Description of drawings
Fig. 1 is the floor map of a known pixel region;
Fig. 2 is the floor map that shows according to a pixel region of one embodiment of the invention;
Fig. 3 is along the sectional view of A-A ' line in the liquid crystal indicator of the present invention of Fig. 2; And
Fig. 4 is the floor map of demonstration one according to the pixel region of another embodiment of the present invention.
The figure number simple declaration
1 substrate
2 common lines
3 protective seams
4 planarization insulating layers
5 pixel electrodes
6 counter electrodes
7,7 gate lines
8 insulation courses
9,9 ' signal line
10 source electrodes
11 drains
12 contact holes
13 contact holes
14 armorphous silicon layers
The armorphous silicon layer of 15 doping
16 thin film transistor (TFT)s
Embodiment
In order to realize above-mentioned purpose of the present invention and advantage and other attendant advantages, the invention provides a kind of liquid crystal indicator, comprise a substrate, planarization insulating layer and a plurality of pixel electrodes above planarization insulating layer and a plurality of counter electrode above the gate line that defines pixel region on this substrate and signal line, thin film transistor (TFT), common line, protective seam, protective seam on gate line and the signal line cross section; Wherein the starting point of pixel electrode and this counter electrode and terminal point are positioned at the same side of this pixel region, pixel electrode and counter electrode are made of any electrically conducting transparent material that is selected from indium tin oxide (ITO) and indium-zinc oxide (IZO), the penetrability of the pixel region that is defined by gate line and signal line increases by this, that is aperture opening ratio increases and can obtain preferable penetrance.It is intersected with each other side by side that pixel electrode and counter electrode extend into the diverging electrodes of pixel region, and horizontal each other with the signal line parallel direction, reaches the panel effect of wide angle.In addition, this planarization insulating layer that is arranged on protective seam top can increase surface and reduce the orientation abnormal occurrence that liquid crystal causes because of surface is not good, and and then reaches the effect that increases briliancy.
According to LCD of the present invention, this counter electrode and pixel electrode can be " Z " word (zigzag) arrangement or linear pattern is arranged or any other arrangement, as long as can produce transverse electric field betwixt, only, better be arranged in " Z " font with regard to producing the multizone LCD alignment with regard to the phenomenon that reduces colour cast.
The present invention will be by being described in more detail formation of the present invention with reference to the accompanying drawings.Know and one of skill in the art will appreciate that accompanying drawing only is used to illustrate the present invention, but not in order to limit its scope.
See also Fig. 2 and Fig. 3.Fig. 2 is the floor map according to a liquid crystal indicator specific embodiment of the present invention, and Fig. 3 be among Fig. 2 liquid crystal indicator of the present invention along the schematic cross-section of A-A ' line.By Fig. 2 cooperate that Fig. 3 can find out that liquid crystal indicator of the present invention comprises a substrate 1, is arranged on common line 2 on the substrate 1, the planarization layer 4 of protective seam 3, protective seam 3 tops, at a plurality of pixel electrodes 5 above the protective seam and a plurality of counter electrode 6 and the thin film transistor (TFT) 16 on gate line 7 and signal line 9 cross sections.Then see also Fig. 2,, gate line 7 is set therebetween on substrate 1,7 ', and insulation course 8 covered gate line 7,7 ' and the top of common line 2.Herein, gate line 7,7 ' goes up covering insulation course 8, covers on it with the armorphous silicon layer 14 and the armorphous silicon layer 15 that mixes again.Wherein, the armorphous silicon layer 15 that mixes is separated and separated into two parts by protective seam 3.Source electrode 10 and drain 11 are symmetrical in gate line 7 and place two parts of the armorphous silicon layer 15 that mixes respectively.First signal line 9 and second signal line, 9 ' level and be positioned in parallel within the relative both sides of insulation course 8 tops and the pixel region that is placed in, and second signal line 9 ' is connecting source electrode 10.Gate line 7,7 ' intersects with first and second signal line 9,9 ' and to define pixel region.Drain 11 is connected via contact hole 12 and pixel electrode 5, and common line 2 is connected via contact hole 13 and counter electrode 6.In addition, counter electrode 6 can be " Z " word (zigzag) arrangement with pixel electrode 5.And wherein the starting point of pixel electrode 5 and this counter electrode 6 and terminal point all the position in the same side of pixel region, and the forked counter electrode part of this counter electrode 6 in extending into pixel region, be to be " ㄇ " font is around this pixel region periphery.In addition, the material of pixel electrode 5 and counter electrode 6 is the electrically conducting transparent material, can use for example indium-tin-oxide (ITO) or indium-zinc oxide (IZO), can obtain preferable penetrance by this.The diverging electrodes that pixel electrode 5 and counter electrode 6 extend into pixel region is intersection side by side, at interval a distance and horizontal each other with the signal line parallel direction.In addition,, on protective seam 3, add planarization insulating layer 4, pixel electrode 5 and counter electrode 6 are set thereon again for improving surface.Because this planarization insulating layer 4 can reduce liquid crystal and cause the unusual phenomenon of orientation because of surface is not good, and because 4 of this planarization insulating layers, therefore can reduce the influence for the liquid crystal molecule orientation of line of electric force that the bottom metal line caused indirectly as insulation.
And for example shown in Figure 2, common line 2 by opaque metal layer constituted, its be arranged at pixel region one side and near signal line 9 when transversely arranged (common line adopt) or gate line 7 (as shown in Figure 2, if common line is adopted vertical arrangement), not cut apart or cross over pixel region (pixel photic zone) and make the transmission region of whole pixel region be a complete large area region.So, can further improve aperture opening ratio, and increase the effect of briliancy.This opaque metal layer can be formed by for example being selected from aluminium (Al), aluminium rubidium alloy (AlNd), tungsten (W), molybdenum opaque conductive metal such as (Mo).
In addition, the part of these signal line 9,9 ' of counter electrode 6 next-door neighbour can with signal line 9,9 ' overlaps or does not overlap.For example, as shown in Figure 2, the part of these counter electrode 6 next-door neighbour's signal line 9,9 ' does not have any overlapping with signal line 9 in this pixel region.When the part of these counter electrode 6 next-door neighbour's signal line 9,9 ' had overlapping with signal line 9 in this pixel region, the transverse electric field that is produced can further increase the aperture opening ratio of pixel region again.
Fig. 4 shows the specific embodiment of another liquid crystal indicator of the present invention, it comprises a substrate 1, be arranged on common line 2 on the substrate 1, the planarization layer 4 of protective seam 3, protective seam 3 tops, at a plurality of pixel electrodes 5 and a plurality of counter electrode 6 above the protective seam and the thin film transistor (TFT) 16 on gate line 7 and signal line 9 cross sections.Also see also Fig. 2,, gate line 7 is set therebetween on substrate 1,7 ', and insulation course 8 covered gate line 7,7 ' and the top of common line 2.Herein, gate line 7,7 ' goes up covering insulation course 8, covers on it with the armorphous silicon layer 14 and the armorphous silicon layer 15 that mixes again.Wherein, the armorphous silicon layer 15 that mixes is separated and separated into two parts by protective seam 3.Source electrode 10 and drain 11 are symmetrical in gate line 7 and place two parts of the armorphous silicon layer 15 that mixes respectively.First signal line 9 and second signal line, 9 ' level and be positioned in parallel within the relative both sides of insulation course 8 tops and the pixel region that is placed in, and second signal line 9 ' is connecting source electrode 10.First and second signal line 9,9 ' intersection of this gate line 7,7 ' and this defines pixel region.Drain 11 is connected via contact hole 12 and pixel electrode 5, and common line 2 is connected via contact hole 13 and counter electrode 6.In addition, counter electrode 6 is to be arranged in a linear with pixel electrode 5.And wherein the starting point of pixel electrode 5 and this counter electrode 6 and terminal point all the position in the same side of pixel region, and the forked counter electrode part of this counter electrode 6 in extending into pixel region, be to be " ㄇ " font is around this pixel region periphery.In addition, the material of pixel electrode 5 and counter electrode 6 is the electrically conducting transparent material.The diverging electrodes that pixel electrode 5 and counter electrode 6 extend into pixel region with spacing distance side by side and horizontal each other with the signal line parallel direction.In addition,, on protective seam 3, add planarization insulating layer 4, pixel electrode 5 and counter electrode 6 are set thereon again for improving surface.
Again, as shown in Figure 2, common line 2 by opaque metal layer constituted, its be arranged at pixel region one side and near signal line 9 when transversely arranged (common line adopt) or gate line 7 (as shown in Figure 2, if common line is adopted vertical arrangement), not cut apart or cross over pixel region (pixel photic zone) and make the transmission region of whole pixel region be a complete large area region.So, can further improve aperture opening ratio, and increase the effect of briliancy.Similarly, this opaque metal layer can be formed by for example being selected from aluminium (Al), aluminium rubidium alloy (AlNd), tungsten (W), molybdenum opaque conductive metal such as (Mo).
Though describe effect of the present invention and advantage in detail by above-mentioned specific embodiment, above-mentioned is the preferred embodiments of the present invention only, is not to be used for limiting the scope of the present invention.Therefore, all equivalent variations and modifications of being done according to the described shape of claims of the present invention, structure, feature and spirit all should be included in the scope of claims of the present invention.
Claims (7)
1. liquid crystal indicator, mainly comprise a substrate, the gate line that defines pixel region on this substrate and signal line, the thin film transistor (TFT) on gate line and the signal line cross section, and common line, protective seam, protective seam above planarization insulating layer and a plurality of pixel electrodes above planarization insulating layer and a plurality of counter electrode; Wherein the starting point of this pixel electrode and this counter electrode and terminal point are positioned at the same side of this pixel region, and the material of this pixel electrode and this counter electrode is the electrically conducting transparent material, wherein, this common line be that opaque metal layer constitutes, it is positioned at pixel electrode one side and near signal line or gate line, not cut apart or cross over the pixel region photic zone and make the transmission region of whole pixel region be a complete large area region.
2. liquid crystal indicator as claimed in claim 1 is characterized in that, this transparent material is indium-tin-oxide (ITO) or indium-zinc oxide (IZO).
3. liquid crystal indicator as claimed in claim 1 is characterized in that, this pixel electrode and this counter electrode are positioned at same level, thereby can get the effect of horizontal component of electric field.
4. as claim 1 or 3 described liquid crystal indicators, it is characterized in that this pixel electrode and this counter electrode are arranged with vertical bar shape or " Z " word shape.
5. as claim 1 or 3 described liquid crystal indicators, it is characterized in that these counter electrode distributed areas do not overlap with this signal line in the pixel region.
6. as claim 1 or 3 described liquid crystal indicators, it is characterized in that these counter electrode distributed areas of this signal line of next-door neighbour and this signal line overlap in the pixel region.
7. liquid crystal indicator as claimed in claim 3 is characterized in that, this pixel electrode and this counter electrode intersect side by side, and horizontal each other with the signal line parallel direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100586353A CN100367101C (en) | 2004-07-26 | 2004-07-26 | Liquid crystal display device having a plurality of pixel electrodes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100586353A CN100367101C (en) | 2004-07-26 | 2004-07-26 | Liquid crystal display device having a plurality of pixel electrodes |
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| Publication Number | Publication Date |
|---|---|
| CN1727969A CN1727969A (en) | 2006-02-01 |
| CN100367101C true CN100367101C (en) | 2008-02-06 |
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| CNB2004100586353A Expired - Fee Related CN100367101C (en) | 2004-07-26 | 2004-07-26 | Liquid crystal display device having a plurality of pixel electrodes |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5409024B2 (en) * | 2008-02-15 | 2014-02-05 | 株式会社半導体エネルギー研究所 | Display device |
| CN102253521B (en) * | 2011-08-08 | 2013-11-06 | 信利半导体有限公司 | Liquid crystal display device and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020159016A1 (en) * | 2001-02-23 | 2002-10-31 | Nec Corporation | In-plane switching mode active matrix type liquid crystal display device and method of fabricating the same |
| US20020158994A1 (en) * | 2001-04-26 | 2002-10-31 | Nec Corporation | Manufacturing method of liquid crystal display device |
| CN1504817A (en) * | 2002-12-05 | 2004-06-16 | ���ʾ��ɷ�����˾ | Lateral electric field type liquid crystal display with high aperture ratio |
| CN2724040Y (en) * | 2004-07-26 | 2005-09-07 | 广辉电子股份有限公司 | Liquid crystal display device |
-
2004
- 2004-07-26 CN CNB2004100586353A patent/CN100367101C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020159016A1 (en) * | 2001-02-23 | 2002-10-31 | Nec Corporation | In-plane switching mode active matrix type liquid crystal display device and method of fabricating the same |
| US20020158994A1 (en) * | 2001-04-26 | 2002-10-31 | Nec Corporation | Manufacturing method of liquid crystal display device |
| CN1504817A (en) * | 2002-12-05 | 2004-06-16 | ���ʾ��ɷ�����˾ | Lateral electric field type liquid crystal display with high aperture ratio |
| CN2724040Y (en) * | 2004-07-26 | 2005-09-07 | 广辉电子股份有限公司 | Liquid crystal display device |
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