CN100357755C - Testing method for effective diffusion length of solar cell - Google Patents
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- CN100357755C CN100357755C CNB2004100178617A CN200410017861A CN100357755C CN 100357755 C CN100357755 C CN 100357755C CN B2004100178617 A CNB2004100178617 A CN B2004100178617A CN 200410017861 A CN200410017861 A CN 200410017861A CN 100357755 C CN100357755 C CN 100357755C
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 49
- 238000012360 testing method Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000000523 sample Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
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- 238000010998 test method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000006798 recombination Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
一种太阳能电池有效扩散长度的测试方法，用于能源技术领域。方法步骤为：测量太阳能电池基片材料的载流子浓度；测量太阳能电池的暗伏安特性和负载特性；采用理论公式拟合太阳能电池暗伏安特性得到饱和电流密度J01，J02；结合基片材料的载流子浓度和负载特性给出的开路电压，短路电流密度，用理论公式使求得的与有效扩散长度相关的饱和电流密度同由暗伏安特性给出的饱和电流密度的平方差之和最小，从而得到太阳能电池的有效扩散长度。本发明可避免吸收和反射系数的详细信息，利用常用测试方法便可直接得到太阳能电池的有效扩散长度，还可同时用以指导太阳能电池的结构优化和工艺改进，具有简单、方便、精确度较高、应用性较强和适用范围广的特点。The invention relates to a method for testing the effective diffusion length of a solar cell, which is used in the field of energy technology. The steps of the method are: measuring the carrier concentration of the solar cell substrate material; measuring the dark volt-ampere characteristics and load characteristics of the solar cell; using a theoretical formula to fit the dark volt-ampere characteristics of the solar cell to obtain the saturation current densities J 01 , J 02 ; The open-circuit voltage and short-circuit current density given by the carrier concentration and load characteristics of the substrate material, and the saturation current density related to the effective diffusion length obtained by using the theoretical formula are the same as the saturation current density given by the dark volt-ampere characteristics. The sum of the squared differences is minimized to obtain the effective diffusion length of the solar cell. The invention can avoid the detailed information of absorption and reflection coefficients, and can directly obtain the effective diffusion length of solar cells by using common test methods, and can also be used to guide the structure optimization and process improvement of solar cells at the same time, and has the advantages of simplicity, convenience, and high accuracy. High performance, strong applicability and wide application range.
Description
Technical field
What the present invention relates to is a kind of method of testing of solar cell active diffusion length, specifically is a kind of method of testing based on solar cell substrates material Hall characteristic, dark volt-ampere characteristic and load characteristic, is used for energy technology field.
Background technology
At present, large-scale development remains production cost that reduces solar cell and the photoelectric transformation efficiency that improves battery with the core place that utilizes the photovoltaic solar generating.Active diffusion length is an extremely important parameter of solar cell, can directly predict the conversion efficiency of solar cell.The active diffusion length of monocrystaline silicon solar cell is relevant with the thickness of body diffusion length, substrate material, few sub-diffusion constant and surface recombination velocity (S.R.V.); The size of the active diffusion length of polysilicon solar cell and the active diffusion length of crystal grain, crystal boundary recombination velocity, crystal grain and to play the part of the dislocation etc. in recombination center relevant.Thereby obtaining for the research on solar battery structure design and the microscopic theory on the macroscopic view of active diffusion length all has important directive function.
Usually, be used for determining that the method for solar cell active diffusion length has internal quantum method of testing and Voltage Decay.Thereby the internal quantum method is by with active diffusion length, recombination velocity etc. being the active diffusion length that parameter fitting test gained internal quantum obtains solar cell.Because this method need clearly be known the absorption and the reflection coefficient of solar cell, and the absorption of every solar cell is often different with reflection coefficient, add absorption and reflection coefficient and be difficult to judge, thereby greatly reduce the popularity that the internal quantum method of testing is used for the less solar cell of thickness; Voltage Decay is the wider method of a kind of application, and it adopts the solar cell open-circuit voltage decay that extraneous laser or stroboscopic lamp cause and obtains the active diffusion length of solar cell in conjunction with correlation theory.But in its Theoretical Calculation process, this method has been ignored the compound of space charge region, and the active diffusion length that makes experiment obtain often has bigger error.
Find by literature search, people such as Taretto were " U.S.'s applicating physical magazine " (Journal of AppliedPhysics) 2003,93 volumes, go up a kind of method of calculating the sun power active diffusion length based on base material carrier concentration, solar cell open-circuit voltage and short-circuit current density that proposes for 5447 pages, this method is simple, and degree of accuracy is higher.Yet, in its derivation and computation process, ignored the series and parallel resistance of solar cell and the saturation current density that big injection condition causes, thereby the solar cell active diffusion length that obtains still has certain deviation with actual comparing; And numerically having that the saturation current density of being tried to achieve by active diffusion length and dark volt-ampere characteristic provide is more different.
Summary of the invention
The objective of the invention is to overcome the deficiency of existing method of testing, a kind of method of testing of solar cell active diffusion length is provided, make it that simple, characteristics such as accuracy is high, the information that provides is reliable more comprehensively are provided, thereby solved the defective that exists in the background technology.
The present invention is achieved by the following technical solutions, and method of testing of the present invention comprises the steps:
(1) carrier concentration of measurement solar cell substrates material;
(2) the dark volt-ampere characteristic and the load characteristic of measurement solar cell;
(3) adopt the dark volt-ampere characteristic of correlation theory match solar cell to obtain saturation current density J
01, J
02
(4) open-circuit voltage that provides of the carrier concentration of combined base material and load characteristic, short-circuit current density, make the saturation current density relevant of trying to achieve difference of two squares sum minimum with correlation theory, thereby obtain the active diffusion length of solar cell with the saturation current density that provides by dark volt-ampere characteristic with active diffusion length.
Step (1) adopts the hall experiment under the normal temperature to measure.
The measuring condition of load characteristic is in the step (2): 25 ± 2 ℃ of room temperatures, spectrum AM1.5, light intensity 100mW/cm
2
Step (3) at first uses single diode model that the dark volt-ampere characteristic of solar cell is carried out computer fitting, obtain comprising series and parallel resistance, ideal factor is in interior series of parameters, with the series and parallel resistance substitution duodiode model dark volt-ampere characteristic of match solar cell again, obtain saturation current density J then
01, J
02
In the step (4), the saturation current density J of solar cell
01=qD
nn
i 2/ N
A/ L
Eff, cause by the compound of differential gap; Saturation current density J
02=(1-β) q π D
nn
iV
t/ F
Max/ L
2 Eff+ 2 β qD
nn
i/ L
EffCompound (J by the space charge region
02Right formula is first in the expression formula) and the big compound (J that causes that injects
02Right formula is second in the expression formula) decision, wherein β is for changing to 1 weight factor by 0, is characterized by the compound saturation current that big injection causes and accounts for J
02The proportion of size, q, D
n, n
i, V
t, F
Max, L
EffBe respectively unit charge electric weight, minority carrier diffusion constant, intrinsic carrier concentration, thermal voltage (kT/q, k, T represent Boltzmann constant and absolute temperature respectively), thermodynamic equilibrium time space charged region maximum field intensity (F
Max=(2qN
AV
Bi/ ε
s)
1/2, V
Bi=kTln (N
DN
A/ n
i 2)/q, wherein V
Bi, ε
s, N
DBe respectively the carrier concentration of built-in electric potential difference, absolute dielectric constant and launch site) and active diffusion length.
In the step (4), solar cell active diffusion length expression formula can be in conjunction with J
01, J
02Expression formula and solar cell load characteristic derive and to draw.When calculating active diffusion length, make the saturation current density relevant of trying to achieve reach minimum with the difference of two squares sum of the saturation current density that provides by dark volt-ampere characteristic with active diffusion length by choosing suitable β.
The present invention has remarkable advantage and progress, the present invention has considered the string of solar cell, parallel resistance and various multiple mechanism (comprise the compound of differential gap, space charge region compound, compound etc. under the big injection condition) saturation current density that causes, and can under the situation of avoiding detailed absorption and reflection coefficient, utilize method of testing commonly used just can directly obtain the active diffusion length of solar cell, can also study influence structure optimization and the process modification in order to instruct solar cell of the micro-parameter of silicon solar cell simultaneously, have simple conversion efficiency, convenient, degree of accuracy is higher, the strong and advantage of wide range of application of application.
Embodiment
Content in conjunction with the inventive method provides following examples:
U.S. Keithley company 2182 receives volt voltage table, 220 high-precision current sources table, 7065 hall-effect switch cards and magnet system coupling the substrate material of solar cell is carried out the Hall test.The solar cell sample that test is made with the p type silicon chip employing same process of three different places of production and distinct methods preparation: monocrystal silicon sample S1, polysilicon sample S2 all adopts casting to decide the method preparation; Polysilicon sample S3 adopts the directional solidification method preparation.Adopted following technology that silicon chip is made solar cell: earlier with acid solution corrosion and texture silicon chip surface, again through POCl
3Diffusion back makes electrode with screen printing technique, in passivated surface and the body and reduce the reflection of incident light on the polysilicon solar cell surface, strengthens chemical vapour deposition technique (PECVD) at its surface deposition SiN with ion beam at last
xAntireflective film.In the dark volt-ampere characteristic test, solar cell is placed in the darkroom, Keithley 2400 power meters under computerizeing control are measured battery.The test of load characteristic is carried out under the following conditions: light source is the X-25 of a U.S. spectrographic laboratory solar simulator, spectrum AM1.5, light intensity 100mW/cm
225 ± 2 ℃ of probe temperatures; Standard cell adopts national solar cell combined calibrating sheet numbering: new-25, and short-circuit current 108mA.
Method of testing of the present invention specifically comprises the steps:
1. under the room temperature, the substrate material of three solar cells is carried out the Hall test.Obtain the carrier concentration N of three substrate materials
A(1.40 * 10
16Cm
-3, 2.00 * 10
16Cm
-3With 3.27 * 10
16Cm
-3).
2. under the room temperature, the solar cell sample (S1, S2, S3) that three substrate materials are made through same process carries out the measurement of dark volt-ampere characteristic and load characteristic, and wherein, load characteristic provides the open-circuit voltage (V of three samples
Oc=0.618 V, 0.572V and 0.530V), short-circuit current density (J
Sc=36.68 mA/cm
2, 33.76mA/cm
2, 25.12 mA/cm
2).
3. based on single diode model the dark volt-ampere characteristic of three samples is carried out resistance in series (0.56 Ω, 0.56 Ω, 0.58 Ω) and the parallel resistance (24.14 Ω, 9.55 Ω, 3.53 Ω) that match obtains three samples; Adopt the duodiode model the dark volt-ampere characteristic of three samples match again to be obtained the saturation current density J of three samples
01(1.86 * 10
-12A/cm
2, 6.88 * 10
-12A/cm
2, 9.64 * 10
-12A/cm
2) and J
02(1.09 * 10
-7A/cm
2, 2.97 * 10
-7A/cm
2, 7.89 * 10
-7A/cm
2).
4. saturation current density J
01=qD
nn
i 2/ N
A/ L
Eff, cause by the compound of differential gap; Consider that the big recombination current that injects is with J
02Be modified to: J
02=(1-β) q π D
nn
iV
t/ F
Max/ L
2 Eff+ 2 β qD
nn
i/ L
Eff, by the compound (J of space charge region
02Right formula is first in the expression formula) and the big compound (J that causes that injects
02Right formula is second in the expression formula) decision, wherein β is for changing to 1 weight factor by 0, is characterized by the compound saturation current that big injection causes and accounts for J
02The proportion of size, q, D
n, n
i, V
t, F
Max, L
EffBe respectively unit charge electric weight, minority carrier diffusion constant, intrinsic carrier concentration, thermal voltage (kT/q, k, T represent Boltzmann constant and absolute temperature respectively), thermodynamic equilibrium time space charged region maximum field intensity (F
Max=(2qN
AV
Bi/ ε
s)
1/2, V
Bi=kTln (N
DN
A/ n
i 2)/q, wherein V
Bi, ε
s, N
DBe respectively the carrier concentration of built-in electric potential difference, absolute dielectric constant and launch site) and active diffusion length.In conjunction with the solar cell load characteristic, can derive the expression formula of solar cell active diffusion length:
Wherein
A
1＝F
maxN
A{J
sc+J
scR
s/R
sh-V
oc/(AR
sh)}，
B
1＝qD
nn
i 2F
max{exp(V
oc/V
t)-exp(J
scR
sA/V
t)}+
2qD
nn
iN
AF
maxβ{exp(V
oc/2V
t)-exp(J
scR
sA/2V
t)}’
C
1＝（1-β)qD
nπn
iV
tN
A{exp(V
oc/2V
t)-exp(J
scR
sA/2V
t)}。
J
Sc, A, R
s, R
ShBe respectively short-circuit current density, area, resistance in series and the parallel resistance of solar cell.The area A of every solar cell is 25cm
2, usually, get ε
s=10
-12F/cm, n
i=10
10Cm
-3, D
n=20cm
2/ s and N
D=1.0 * 10
20Cm
-3, select suitable β, make J by calculating
01And J
02The J that provides with dark volt-ampere characteristic
01And J
02Thereby difference of two squares sum reaches the minimum active diffusion length that provides three samples: 224.4 μ m, 27.5 μ m and 18.2 μ m.With by minority carrier lifetime and combine the active diffusion length of three samples that other physical parameter tries to achieve: 204.0 μ m, 22.2 μ m and 7.1 μ m are very approaching, and reliability of the present invention has been described.
Claims (5)
1. the method for testing of a solar cell active diffusion length is characterized in that, comprises the steps:
(1) carrier concentration of measurement solar cell substrates material;
(2) the dark volt-ampere characteristic and the load characteristic of measurement solar cell;
(3) adopt the dark volt-ampere characteristic of theoretical formula match solar cell to obtain saturation current density J
01, J
02
(4) open-circuit voltage that provides of the carrier concentration of combined base material and load characteristic, short-circuit current density, make the saturation current density relevant of trying to achieve difference of two squares sum minimum with theoretical formula, thereby obtain the active diffusion length of solar cell with the saturation current density that provides by dark volt-ampere characteristic with active diffusion length.
2. the method for testing of solar cell active diffusion length according to claim 1 is characterized in that, in the step (2), the test condition of load characteristic is: spectrum AM 1.5, light intensity 100mW/cm
2, 25 ± 2 ℃ of probe temperatures.
3. the method for testing of solar cell active diffusion length according to claim 1, it is characterized in that, in the step (3), adopt the dark volt-ampere characteristic of single diode model match to obtain the series and parallel resistance of solar cell earlier, in conjunction with series and parallel resistance, adopt the duodiode model to obtain solar cell saturation current density J then
01, J
02
4. the method for testing of solar cell active diffusion length according to claim 1 is characterized in that, in the step (4), and the saturation current density J that the active diffusion length of solar cell is relevant
01=qD
nn
i 2/ N
A/ L
Eff, cause saturation current density J by the compound of differential gap
02=(1-β) q π D
nn
iV
t/ F
Max/ L
2 Eff+ 2 β qD
nn
i/ L
Eff, by the compound of space charge region with inject the compound decision cause greatly, wherein β is for changing to 1 weight factor by 0, is characterized by the compound saturation current that big injection causes and accounts for J
02The proportion of numerical values recited; Q, D
n, n
i, V
t, F
Max, L
EffBe respectively unit charge electric weight, minority carrier diffusion constant, intrinsic carrier concentration, thermal voltage, thermodynamic equilibrium time space charged region maximum field intensity and active diffusion length; F
Max=(2qN
AV
Bi/ ε
s)
1/2, V
Bi=kTln (N
DN
A/ n
i 2)/q, wherein V
Bi, ε
s, N
DBe respectively the carrier concentration of built-in electric potential difference, absolute dielectric constant and launch site, k, T represent Boltzmann constant and absolute temperature, kT/q=V respectively
tPromptly represent thermal voltage, N
ACarrier concentration for substrate material.
5. the method for testing of solar cell active diffusion length according to claim 4 is characterized in that, L
EffBy above-mentioned J
01, J
02Expression formula and derive in conjunction with load characteristic draws, and when calculating active diffusion length, makes the saturation current density relevant with active diffusion length of trying to achieve reach minimum with the difference of two squares sum of the saturation current density that is provided by dark volt-ampere characteristic by choosing β.
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| GB0821146D0 (en) | 2008-11-19 | 2008-12-24 | Univ Denmark Tech Dtu | Method of testing solar cells |
| CN102288891B (en) * | 2011-09-07 | 2013-03-27 | 南昌航空大学 | Method for extracting parameters of solar cell |
| CN108599726B (en) * | 2018-04-23 | 2019-05-03 | 西北核技术研究所 | Analysis method of laser damage effect of two-terminal tandem solar cells |
| CN116047256B (en) * | 2023-03-24 | 2023-08-29 | 长鑫存储技术有限公司 | Test method, test device and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4598249A (en) * | 1984-02-29 | 1986-07-01 | Rca Corporation | Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material |
| JPH08278354A (en) * | 1995-04-07 | 1996-10-22 | Shikoku Sogo Kenkyusho:Kk | Solar cell tester |
| CN1204059A (en) * | 1997-06-30 | 1999-01-06 | 佳能株式会社 | Measuring apparatus and method for measuring characteristic of solar cell |
| CN1331488A (en) * | 2000-07-04 | 2002-01-16 | 佳能株式会社 | Method and device for measuring photoelectric translating characteristic |
-
2004
- 2004-04-22 CN CNB2004100178617A patent/CN100357755C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4598249A (en) * | 1984-02-29 | 1986-07-01 | Rca Corporation | Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material |
| JPH08278354A (en) * | 1995-04-07 | 1996-10-22 | Shikoku Sogo Kenkyusho:Kk | Solar cell tester |
| CN1204059A (en) * | 1997-06-30 | 1999-01-06 | 佳能株式会社 | Measuring apparatus and method for measuring characteristic of solar cell |
| CN1331488A (en) * | 2000-07-04 | 2002-01-16 | 佳能株式会社 | Method and device for measuring photoelectric translating characteristic |
Non-Patent Citations (2)
| Title |
|---|
| Ga_1_xAl_xAsGaAs太阳电池结特性研究 管丽民，徐红，隋兆文，陈芬扣.太阳能学报，第7卷第1期 1986 * |
| 太阳能电池基片扩散长度的自动测量系统 杨建德，尚鲜利.黑龙江自动化技术与应用，第14卷第1期 1995 * |
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Assignee: Ninghai Risen Electric Co.,Ltd. Assignor: Shanghai Jiao Tong University Contract fulfillment period: 2008.9.16 to 2015.9.15 Contract record no.: 2008330001107 Denomination of invention: Testing method for effective diffusion length of solar cell Granted publication date: 20071226 License type: Exclusive license Record date: 20081016 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.9.16 TO 2015.9.15; CHANGE OF CONTRACT Name of requester: NINGHAI COUNTY RISHENG ELECTRICAL APPLIANCES CO., Effective date: 20081016 |
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Owner name: NINGHAI RISEN ENERGY CO.,LTD. Free format text: FORMER OWNER: SHANGHAI JIAOTONG UNIVERSITY Effective date: 20100429 |
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Owner name: DONGFANG RISHENG NEW ENERGY CO., LTD. Free format text: FORMER NAME: NINGHAI RISEN ENERGY CO.,LTD. |
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Free format text: CORRECT: ADDRESS; FROM: 200240 NO.800, DONGCHUAN ROAD, MINXING DISTRICT, SHANGHAI CITY TO: 315613 SHAOJIA INDUSTRIAL PARK DISTRICT, XIDIAN, NINGHAI COUNTY, NINGBO CITY, ZHEJIANG PROVINCE |
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Address after: 315613, Ningbo County, Zhejiang province Ninghai City West shop Shao Industrial Park Patentee after: RISEN ENERGY Co.,Ltd. Address before: 315613, Ningbo County, Zhejiang province Ninghai City West shop Shao Industrial Park Patentee before: Ninghai Risen Electric Co.,Ltd. |
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Effective date of registration: 20100429 Address after: 315613, Ningbo County, Zhejiang province Ninghai City West shop Shao Industrial Park Patentee after: Ninghai Risen Electric Co.,Ltd. Address before: 200240 Dongchuan Road, Shanghai, No. 800, No. Patentee before: Shanghai Jiao Tong University |
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