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CH560463A5 - - Google Patents

Info

Publication number
CH560463A5
CH560463A5 CH1098873A CH1098873A CH560463A5 CH 560463 A5 CH560463 A5 CH 560463A5 CH 1098873 A CH1098873 A CH 1098873A CH 1098873 A CH1098873 A CH 1098873A CH 560463 A5 CH560463 A5 CH 560463A5
Authority
CH
Switzerland
Application number
CH1098873A
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247183 external-priority patent/DE2247183C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH560463A5 publication Critical patent/CH560463A5/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817Combinations of field-effect devices and resistors only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CH1098873A 1972-09-26 1973-07-27 CH560463A5 (ro)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722247183 DE2247183C3 (de) 1972-09-26 Verfahren zur Herstellung von Schaltungen mit wenigstens einem Feldeffekttransistor mit einer Source-, einer Drain- und einer Gateelektrode und mit mindestens einem ohmschen > Schichtwiderstand auf einem gemeinsamen Substrat

Publications (1)

Publication Number Publication Date
CH560463A5 true CH560463A5 (ro) 1975-03-27

Family

ID=5857423

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1098873A CH560463A5 (ro) 1972-09-26 1973-07-27

Country Status (11)

Country Link
US (1) US3889358A (ro)
JP (1) JPS4973086A (ro)
BE (1) BE805346A (ro)
CA (1) CA1004373A (ro)
CH (1) CH560463A5 (ro)
FR (1) FR2200624B1 (ro)
GB (1) GB1447236A (ro)
IT (1) IT993410B (ro)
LU (1) LU68478A1 (ro)
NL (1) NL7313070A (ro)
SE (1) SE390085B (ro)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138990A (en) * 1974-09-30 1976-03-31 Suwa Seikosha Kk Handotaisochino seizohoho
JPS51103780A (ja) * 1975-03-10 1976-09-13 Tokyo Shibaura Electric Co Handotaisoshi
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
US4295264A (en) * 1975-12-29 1981-10-20 Texas Instruments Incorporated Method of making integrated circuit MOS capacitor using implanted region to change threshold
US4246692A (en) * 1976-05-28 1981-01-27 Texas Instruments Incorporated MOS Integrated circuits with implanted resistor elements
US4212083A (en) * 1976-05-28 1980-07-08 Texas Instruments Incorporated MOS Integrated with implanted resistor elements
US4114255A (en) * 1976-08-16 1978-09-19 Intel Corporation Floating gate storage device and method of fabrication
US4187602A (en) * 1976-12-27 1980-02-12 Texas Instruments Incorporated Static memory cell using field implanted resistance
US4228451A (en) * 1978-07-21 1980-10-14 Monolithic Memories, Inc. High resistivity semiconductor resistor device
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4485553A (en) * 1983-06-27 1984-12-04 Teletype Corporation Method for manufacturing an integrated circuit device
US4472875A (en) * 1983-06-27 1984-09-25 Teletype Corporation Method for manufacturing an integrated circuit device
US4468857A (en) * 1983-06-27 1984-09-04 Teletype Corporation Method of manufacturing an integrated circuit device
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
JPS61113269A (ja) * 1984-11-08 1986-05-31 Rohm Co Ltd 半導体装置
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
JP2919379B2 (ja) * 1996-08-29 1999-07-12 九州日本電気株式会社 半導体装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6713666A (ro) * 1967-10-07 1969-04-09
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3679492A (en) * 1970-03-23 1972-07-25 Ibm Process for making mosfet's
US3789504A (en) * 1971-10-12 1974-02-05 Gte Laboratories Inc Method of manufacturing an n-channel mos field-effect transistor

Also Published As

Publication number Publication date
JPS4973086A (ro) 1974-07-15
DE2247183B2 (de) 1977-02-10
IT993410B (it) 1975-09-30
CA1004373A (en) 1977-01-25
US3889358A (en) 1975-06-17
LU68478A1 (ro) 1973-12-07
DE2247183A1 (de) 1974-04-25
SE390085B (sv) 1976-11-29
GB1447236A (en) 1976-08-25
NL7313070A (ro) 1974-03-28
FR2200624A1 (ro) 1974-04-19
FR2200624B1 (ro) 1977-09-09
BE805346A (fr) 1974-01-16

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Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased