CH528301A - Vorrichtung zum Herstellen von rohrförmigen Körpern aus Halbleitermaterial, vorzugsweise aus Silicium oder Germanium - Google Patents
Vorrichtung zum Herstellen von rohrförmigen Körpern aus Halbleitermaterial, vorzugsweise aus Silicium oder GermaniumInfo
- Publication number
- CH528301A CH528301A CH1207171A CH1207171A CH528301A CH 528301 A CH528301 A CH 528301A CH 1207171 A CH1207171 A CH 1207171A CH 1207171 A CH1207171 A CH 1207171A CH 528301 A CH528301 A CH 528301A
- Authority
- CH
- Switzerland
- Prior art keywords
- germanium
- silicon
- semiconductor material
- tubular bodies
- producing tubular
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2050076A DE2050076C3 (de) | 1970-10-12 | 1970-10-12 | Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH528301A true CH528301A (de) | 1972-09-30 |
Family
ID=5784889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1207171A CH528301A (de) | 1970-10-12 | 1971-08-17 | Vorrichtung zum Herstellen von rohrförmigen Körpern aus Halbleitermaterial, vorzugsweise aus Silicium oder Germanium |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3746496A (de) |
| JP (1) | JPS491393B1 (de) |
| BE (1) | BE768301A (de) |
| CA (1) | CA959382A (de) |
| CH (1) | CH528301A (de) |
| CS (1) | CS188118B2 (de) |
| DE (1) | DE2050076C3 (de) |
| DK (1) | DK133604C (de) |
| FR (1) | FR2111084A5 (de) |
| GB (1) | GB1347368A (de) |
| NL (1) | NL7111264A (de) |
| SE (1) | SE367443B (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3950479A (en) * | 1969-04-02 | 1976-04-13 | Siemens Aktiengesellschaft | Method of producing hollow semiconductor bodies |
| US3979490A (en) * | 1970-12-09 | 1976-09-07 | Siemens Aktiengesellschaft | Method for the manufacture of tubular bodies of semiconductor material |
| US4015922A (en) * | 1970-12-09 | 1977-04-05 | Siemens Aktiengesellschaft | Apparatus for the manufacture of tubular bodies of semiconductor material |
| US4034705A (en) * | 1972-05-16 | 1977-07-12 | Siemens Aktiengesellschaft | Shaped bodies and production of semiconductor material |
| DE2322952C3 (de) * | 1973-05-07 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen |
| DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
| JPS58177460U (ja) * | 1982-05-19 | 1983-11-28 | 後藤 定三 | カラ−錠前 |
| JP2725081B2 (ja) * | 1990-07-05 | 1998-03-09 | 富士通株式会社 | 半導体装置製造用熱処理装置 |
| US6228297B1 (en) * | 1998-05-05 | 2001-05-08 | Rohm And Haas Company | Method for producing free-standing silicon carbide articles |
| US9683286B2 (en) * | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
| JP5309963B2 (ja) * | 2007-12-28 | 2013-10-09 | 三菱マテリアル株式会社 | 多結晶シリコンのシリコン芯棒組立体及びその製造方法、多結晶シリコン製造装置、多結晶シリコン製造方法 |
| CN101980959A (zh) * | 2008-03-26 | 2011-02-23 | Gt太阳能公司 | 涂覆金的多晶硅反应器系统和方法 |
| EP2271788A2 (de) * | 2008-03-26 | 2011-01-12 | GT Solar Incorporated | Systeme und verfahren zur verteilung von gas in einem cvd-reaktor |
| RU2011102451A (ru) * | 2008-06-23 | 2012-07-27 | ДжиТи СОЛАР ИНКОРПОРЕЙТЕД (US) | Точки соединения держателя и перемычки для трубчатых нитей накала в реакторе для химического осаждения из газовой фазы |
| US10494714B2 (en) * | 2011-01-03 | 2019-12-03 | Oci Company Ltd. | Chuck for chemical vapor deposition systems and related methods therefor |
| CN103158200B (zh) * | 2011-12-09 | 2016-07-06 | 洛阳金诺机械工程有限公司 | 一种c形硅芯的搭接方法 |
| CN103158202B (zh) * | 2011-12-09 | 2016-07-06 | 洛阳金诺机械工程有限公司 | 一种空心硅芯的搭接方法 |
| CN103158201B (zh) * | 2011-12-09 | 2016-03-02 | 洛阳金诺机械工程有限公司 | 一种空心硅芯与实心硅芯的搭接方法 |
| US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| US10450649B2 (en) * | 2014-01-29 | 2019-10-22 | Gtat Corporation | Reactor filament assembly with enhanced misalignment tolerance |
| US11592169B2 (en) * | 2018-10-01 | 2023-02-28 | Flowil International Lighting (Holding) B.V. | Linear LED light source and manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2955566A (en) * | 1957-04-16 | 1960-10-11 | Chilean Nitrate Sales Corp | Dissociation-deposition unit for the production of chromium |
| NL238464A (de) * | 1958-05-29 | |||
| NL246189A (de) * | 1958-12-09 | |||
| GB944009A (en) * | 1960-01-04 | 1963-12-11 | Texas Instruments Ltd | Improvements in or relating to the deposition of silicon on a tantalum article |
| DE1223804B (de) * | 1961-01-26 | 1966-09-01 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium |
-
1970
- 1970-10-12 DE DE2050076A patent/DE2050076C3/de not_active Expired
- 1970-12-29 JP JP45121933A patent/JPS491393B1/ja active Pending
-
1971
- 1971-02-08 US US00113286A patent/US3746496A/en not_active Expired - Lifetime
- 1971-06-09 BE BE768301A patent/BE768301A/xx unknown
- 1971-08-16 NL NL7111264A patent/NL7111264A/xx unknown
- 1971-08-17 CH CH1207171A patent/CH528301A/de not_active IP Right Cessation
- 1971-09-03 CS CS716329A patent/CS188118B2/cs unknown
- 1971-09-22 GB GB4411571A patent/GB1347368A/en not_active Expired
- 1971-10-07 FR FR7136062A patent/FR2111084A5/fr not_active Expired
- 1971-10-08 CA CA124,754A patent/CA959382A/en not_active Expired
- 1971-10-11 DK DK492371A patent/DK133604C/da active
- 1971-10-12 SE SE12918/71A patent/SE367443B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DK133604B (da) | 1976-06-14 |
| SU430532A3 (ru) | 1974-05-30 |
| BE768301A (fr) | 1971-11-03 |
| GB1347368A (en) | 1974-02-27 |
| DE2050076B2 (de) | 1979-07-26 |
| JPS491393B1 (de) | 1974-01-12 |
| DE2050076C3 (de) | 1980-06-26 |
| CS188118B2 (en) | 1979-02-28 |
| NL7111264A (de) | 1972-04-14 |
| US3746496A (en) | 1973-07-17 |
| CA959382A (en) | 1974-12-17 |
| DE2050076A1 (de) | 1972-04-13 |
| SE367443B (de) | 1974-05-27 |
| DK133604C (da) | 1976-11-01 |
| FR2111084A5 (de) | 1972-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CH528301A (de) | Vorrichtung zum Herstellen von rohrförmigen Körpern aus Halbleitermaterial, vorzugsweise aus Silicium oder Germanium | |
| NL142287B (nl) | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, alsmede halfgeleiderinrichting vervaardigd volgens deze werkwijze. | |
| CH506187A (de) | Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial | |
| CH536705A (de) | Vorrichtung zum Herstellen von gekrümmten Wickelkörpern | |
| CH498493A (de) | Verfahren zum Herstellen monolithischer Halbleiteranordnungen | |
| AT332637B (de) | Vorrichtung zum herstellen von kunststoffrohren | |
| BE763537A (fr) | Procede de fabrication de pieces moulees en silicium | |
| CH407962A (de) | Vorrichtung zum Herstellen von Halbleiterstäben | |
| IT1012045B (it) | Dispositivo per fabbricare ogget ti tubolari di silicio | |
| AT258364B (de) | Verfahren zum Herstellen von Halbleiteranordnungen | |
| BE788159A (fr) | Procede de decapage du nitrure de silicium | |
| CH453310A (de) | Polykristalliner Halbleiterkörper und Verfahren zum Herstellen desselben | |
| BE797694A (fr) | Procede perfectionne de production de silicium elementaire polycristallin | |
| AT333104B (de) | Vorrichtung zum herstellen konischer tuben aus weichem metall | |
| AT320574B (de) | Vorrichtung zum Herstellen von Netzstoffen | |
| BE769289A (fr) | Procede de fabrication de tetrafluorure de silicium | |
| AT305127B (de) | Vorrichtung zum Herstellen von keramisch gebundenen Körpern aus Blähton | |
| CH519788A (de) | Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium | |
| AT268379B (de) | Verfahren und Vorrichtung zum Herstellen dotierten Halbleitermaterials | |
| CH536656A (de) | Verfahren zum Herstellen beliebig langer Hohlkörper aus Halbleitermaterial, insbesondere aus Silicium | |
| CH557701A (de) | Vorrichtung zum herstellen von drahtabschnitten. | |
| AT303373B (de) | Vorrichtung zum kontinuierlichen Herstellen von Hohlkörpern aus thermoplastischem Material | |
| CH546099A (de) | Verfahren und vorrichtung zum sortieren rotationssymmetrischer koerper. | |
| CH545177A (de) | Vorrichtung zum Schneiden von Halbleiterstäben, insbesondere Siliciumstäben, in Scheiben | |
| BE793800A (fr) | Dispositif semiconducteur et son procede de fabrication |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |