CH495629A - Semiconductor device and method for the production thereof - Google Patents
Semiconductor device and method for the production thereofInfo
- Publication number
- CH495629A CH495629A CH1514268A CH1514268A CH495629A CH 495629 A CH495629 A CH 495629A CH 1514268 A CH1514268 A CH 1514268A CH 1514268 A CH1514268 A CH 1514268A CH 495629 A CH495629 A CH 495629A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
- H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67522667A | 1967-10-13 | 1967-10-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH495629A true CH495629A (en) | 1970-08-31 |
Family
ID=24709564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1514268A CH495629A (en) | 1967-10-13 | 1968-10-10 | Semiconductor device and method for the production thereof |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS4841391B1 (en) |
BR (1) | BR6802913D0 (en) |
CH (1) | CH495629A (en) |
DE (2) | DE6802215U (en) |
FR (1) | FR1587469A (en) |
GB (1) | GB1245765A (en) |
NL (1) | NL6814111A (en) |
SE (1) | SE352775B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4036958A1 (en) * | 1989-11-22 | 1991-05-23 | Mitsubishi Electric Corp | STRUCTURE FOR AVOIDING FIELD CONCENTRATIONS IN A SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
US5204545A (en) * | 1989-11-22 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Structure for preventing field concentration in semiconductor device and method of forming the same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1944280B2 (en) * | 1969-09-01 | 1971-06-09 | MONOLITICALLY INTEGRATED SOLID-STATE CIRCUIT FROM FIELD EFFECT TRANSISTORS | |
FR2420209A1 (en) * | 1978-03-14 | 1979-10-12 | Thomson Csf | HIGH VOLTAGE INTEGRATED CIRCUIT STRUCTURE |
DE3333242C2 (en) * | 1982-09-13 | 1995-08-17 | Nat Semiconductor Corp | Monolithically integrated semiconductor circuit |
US5606195A (en) * | 1995-12-26 | 1997-02-25 | Hughes Electronics | High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (en) * | 1962-06-11 | |||
US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
CA956038A (en) * | 1964-08-20 | 1974-10-08 | Roy W. Stiegler (Jr.) | Semiconductor devices with field electrodes |
-
1968
- 1968-09-27 GB GB46115/68A patent/GB1245765A/en not_active Expired
- 1968-10-02 NL NL6814111A patent/NL6814111A/xx unknown
- 1968-10-07 BR BR202913/68A patent/BR6802913D0/en unknown
- 1968-10-10 CH CH1514268A patent/CH495629A/en not_active IP Right Cessation
- 1968-10-11 FR FR1587469D patent/FR1587469A/fr not_active Expired
- 1968-10-12 JP JP43074564A patent/JPS4841391B1/ja active Pending
- 1968-10-14 DE DE6802215U patent/DE6802215U/en not_active Expired
- 1968-10-14 SE SE13838/68A patent/SE352775B/xx unknown
- 1968-10-14 DE DE1803026A patent/DE1803026C3/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4036958A1 (en) * | 1989-11-22 | 1991-05-23 | Mitsubishi Electric Corp | STRUCTURE FOR AVOIDING FIELD CONCENTRATIONS IN A SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
US5204545A (en) * | 1989-11-22 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Structure for preventing field concentration in semiconductor device and method of forming the same |
Also Published As
Publication number | Publication date |
---|---|
DE1803026B2 (en) | 1973-09-20 |
DE1803026C3 (en) | 1981-09-10 |
SE352775B (en) | 1973-01-08 |
JPS4841391B1 (en) | 1973-12-06 |
BR6802913D0 (en) | 1973-01-04 |
DE1803026A1 (en) | 1971-02-11 |
NL6814111A (en) | 1969-04-15 |
GB1245765A (en) | 1971-09-08 |
DE6802215U (en) | 1972-04-06 |
FR1587469A (en) | 1970-03-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |