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CH495629A - Semiconductor device and method for the production thereof - Google Patents

Semiconductor device and method for the production thereof

Info

Publication number
CH495629A
CH495629A CH1514268A CH1514268A CH495629A CH 495629 A CH495629 A CH 495629A CH 1514268 A CH1514268 A CH 1514268A CH 1514268 A CH1514268 A CH 1514268A CH 495629 A CH495629 A CH 495629A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor device
semiconductor
Prior art date
Application number
CH1514268A
Other languages
German (de)
Inventor
Marius Brown Dale
Ernest Engeler William
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH495629A publication Critical patent/CH495629A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/111Field plates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/40Vertical BJTs
    • H10D10/421Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
CH1514268A 1967-10-13 1968-10-10 Semiconductor device and method for the production thereof CH495629A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67522667A 1967-10-13 1967-10-13

Publications (1)

Publication Number Publication Date
CH495629A true CH495629A (en) 1970-08-31

Family

ID=24709564

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1514268A CH495629A (en) 1967-10-13 1968-10-10 Semiconductor device and method for the production thereof

Country Status (8)

Country Link
JP (1) JPS4841391B1 (en)
BR (1) BR6802913D0 (en)
CH (1) CH495629A (en)
DE (2) DE6802215U (en)
FR (1) FR1587469A (en)
GB (1) GB1245765A (en)
NL (1) NL6814111A (en)
SE (1) SE352775B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4036958A1 (en) * 1989-11-22 1991-05-23 Mitsubishi Electric Corp STRUCTURE FOR AVOIDING FIELD CONCENTRATIONS IN A SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1944280B2 (en) * 1969-09-01 1971-06-09 MONOLITICALLY INTEGRATED SOLID-STATE CIRCUIT FROM FIELD EFFECT TRANSISTORS
FR2420209A1 (en) * 1978-03-14 1979-10-12 Thomson Csf HIGH VOLTAGE INTEGRATED CIRCUIT STRUCTURE
DE3333242C2 (en) * 1982-09-13 1995-08-17 Nat Semiconductor Corp Monolithically integrated semiconductor circuit
US5606195A (en) * 1995-12-26 1997-02-25 Hughes Electronics High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (en) * 1962-06-11
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4036958A1 (en) * 1989-11-22 1991-05-23 Mitsubishi Electric Corp STRUCTURE FOR AVOIDING FIELD CONCENTRATIONS IN A SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same

Also Published As

Publication number Publication date
DE1803026B2 (en) 1973-09-20
DE1803026C3 (en) 1981-09-10
SE352775B (en) 1973-01-08
JPS4841391B1 (en) 1973-12-06
BR6802913D0 (en) 1973-01-04
DE1803026A1 (en) 1971-02-11
NL6814111A (en) 1969-04-15
GB1245765A (en) 1971-09-08
DE6802215U (en) 1972-04-06
FR1587469A (en) 1970-03-20

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Legal Events

Date Code Title Description
PL Patent ceased