CH441238A - Verfahren zum Ändern der Fremdstoffkonzentration in einem Halbleiterkörper - Google Patents
Verfahren zum Ändern der Fremdstoffkonzentration in einem HalbleiterkörperInfo
- Publication number
- CH441238A CH441238A CH1108664A CH1108664A CH441238A CH 441238 A CH441238 A CH 441238A CH 1108664 A CH1108664 A CH 1108664A CH 1108664 A CH1108664 A CH 1108664A CH 441238 A CH441238 A CH 441238A
- Authority
- CH
- Switzerland
- Prior art keywords
- impurities
- concentration
- changing
- semiconductor body
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/045—Electric field
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/13—Purification
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL297199 | 1963-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH441238A true CH441238A (de) | 1967-08-15 |
Family
ID=19754989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1108664A CH441238A (de) | 1963-08-27 | 1964-08-24 | Verfahren zum Ändern der Fremdstoffkonzentration in einem Halbleiterkörper |
Country Status (7)
Country | Link |
---|---|
US (1) | US3380902A (de) |
BE (1) | BE652274A (de) |
CH (1) | CH441238A (de) |
DE (1) | DE1282614B (de) |
FR (1) | FR1405113A (de) |
GB (1) | GB1072322A (de) |
NL (1) | NL297199A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032418A (en) * | 1975-01-16 | 1977-06-28 | Jovan Antula | Method of introducing impurities into a semiconductor |
US4646427A (en) * | 1984-06-28 | 1987-03-03 | Motorola, Inc. | Method of electrically adjusting the zener knee of a lateral polysilicon zener diode |
DE3546437A1 (de) * | 1985-01-31 | 1986-10-30 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Verfahren zur aenderung der lokalen, atomaren zusammensetzung von festkoerpern, insbesondere halbleitern |
DE3503264A1 (de) * | 1985-01-31 | 1986-08-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Verfahren zur aenderung der lokalen, atomaren zusammensetzung von festkoerpern, insbesondere halbleitern |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA645432A (en) * | 1962-07-24 | M. Pell Erik | Semiconductor devices and methods of making the same | |
US3078219A (en) * | 1958-11-03 | 1963-02-19 | Westinghouse Electric Corp | Surface treatment of silicon carbide |
US3174919A (en) * | 1962-10-31 | 1965-03-23 | Corning Glass Works | Methods for electrolyzing glass |
-
0
- NL NL297199D patent/NL297199A/xx unknown
-
1964
- 1964-07-31 US US386692A patent/US3380902A/en not_active Expired - Lifetime
- 1964-08-22 DE DEN25407A patent/DE1282614B/de active Pending
- 1964-08-24 CH CH1108664A patent/CH441238A/de unknown
- 1964-08-24 GB GB34520/64A patent/GB1072322A/en not_active Expired
- 1964-08-25 BE BE652274A patent/BE652274A/xx unknown
- 1964-08-27 FR FR986318A patent/FR1405113A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1405113A (fr) | 1965-07-02 |
BE652274A (de) | 1965-02-25 |
DE1282614B (de) | 1968-11-14 |
US3380902A (en) | 1968-04-30 |
NL297199A (de) | |
GB1072322A (en) | 1967-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH451191A (de) | Verfahren zum kontinuierlichen Diazotieren von Aminen | |
CH407338A (de) | Verfahren zum Kontaktieren von Halbleiterbauelementen | |
AT264590B (de) | Verfahren zum Herstellen eines Kontaktes an einem Halbleiterkörper | |
AT244825B (de) | Verfahren zum Zerschneiden halbplastischer Körper | |
CH482746A (de) | Verfahren zum Stabilisieren von Polyolefinen | |
CH502841A (de) | Verfahren zum Regenerieren von Säurelösungen | |
CH408219A (de) | Verfahren zum Zertrennen von plattenförmigen Halbleiterkörpern in kleinflächigere Körper | |
AT254509B (de) | Verfahren zum Modifizieren von Polyolefinen | |
CH440478A (de) | Verfahren zum Herabsetzen der Durchlasspannung in einem gleichrichtenden Halbleiterkörper und Anordnung zur Ausführung des Verfahrens | |
AT242668B (de) | Verfahren zum Einkapseln von mikroskopischen Teilchen | |
CH379664A (de) | Verfahren und Einrichtung zum elektrolytischen Herstellen einer Ausnehmung in einem Werkstück | |
CH420072A (de) | Verfahren zum Herstellen von einkristallinen Halbleiterstäben | |
CH441238A (de) | Verfahren zum Ändern der Fremdstoffkonzentration in einem Halbleiterkörper | |
CH440227A (de) | Verfahren zum Herstellen von Halbleiterkristallen, mit einstellbarer Fremdstoffkonzentration | |
CH422328A (de) | Verfahren zum Stabilisieren von Polyolefinen | |
CH468855A (de) | Verfahren zum Tiefziehen | |
CH382325A (de) | Verfahren und Einrichtung zum elektrolytischen Herstellen einer Ausnehmung in einem Werkstück | |
CH436103A (de) | Verfahren zum Verpacken von Gegenständen | |
CH444828A (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
CH454098A (de) | Verfahren zum Eindiffundieren von Fremdstoffen in einen einkristallinen Halbleiterkörper | |
AT268354B (de) | Vorrichtung zum induktiven Teilhärten von Werkstücken | |
AT257920B (de) | Verfahren zum Stabilisieren von Polyolefinen | |
AT239311B (de) | Verfahren zum Herstellen einer p-dotierten Zone in einem Körper aus Halbleitermaterial | |
CH401634A (de) | Verfahren zum formgebenden Bearbeiten von Halbleiterkristallen | |
CH407337A (de) | Verfahren zum Herstellen von Halbleiterscheiben |