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CH423022A - Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes - Google Patents

Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes

Info

Publication number
CH423022A
CH423022A CH909065A CH909065A CH423022A CH 423022 A CH423022 A CH 423022A CH 909065 A CH909065 A CH 909065A CH 909065 A CH909065 A CH 909065A CH 423022 A CH423022 A CH 423022A
Authority
CH
Switzerland
Prior art keywords
changing
semiconductor component
electrical characteristic
characteristic
electrical
Prior art date
Application number
CH909065A
Other languages
English (en)
Inventor
Earl Jr Thomas Jacob
Reeder Young Donald
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH423022A publication Critical patent/CH423022A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
CH909065A 1964-06-29 1965-06-29 Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes CH423022A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US378850A US3333326A (en) 1964-06-29 1964-06-29 Method of modifying electrical characteristic of semiconductor member

Publications (1)

Publication Number Publication Date
CH423022A true CH423022A (de) 1966-10-31

Family

ID=23494800

Family Applications (1)

Application Number Title Priority Date Filing Date
CH909065A CH423022A (de) 1964-06-29 1965-06-29 Verfahren zur Änderung eines elektrischen Kennwertes eines Halbleiter-Bauelementes

Country Status (4)

Country Link
US (1) US3333326A (de)
CH (1) CH423022A (de)
DE (1) DE1515884C3 (de)
NL (1) NL6507672A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508209A (en) * 1966-03-31 1970-04-21 Ibm Monolithic integrated memory array structure including fabrication and package therefor
US3731375A (en) * 1966-03-31 1973-05-08 Ibm Monolithic integrated structure including fabrication and packaging therefor
US3520051A (en) * 1967-05-01 1970-07-14 Rca Corp Stabilization of thin film transistors
US3835530A (en) * 1967-06-05 1974-09-17 Texas Instruments Inc Method of making semiconductor devices
US3653119A (en) * 1967-12-28 1972-04-04 Sprague Electric Co Method of producing electrical capacitors
US3460010A (en) * 1968-05-15 1969-08-05 Ibm Thin film decoupling capacitor incorporated in an integrated circuit chip,and process for making same
US3525911A (en) * 1968-06-06 1970-08-25 Westinghouse Electric Corp Semiconductor integrated circuit including improved diode structure
US3574932A (en) * 1968-08-12 1971-04-13 Motorola Inc Thin-film beam-lead resistors
US3534237A (en) * 1969-01-21 1970-10-13 Burroughs Corp Power isolation of integrated circuits
US3629667A (en) * 1969-03-14 1971-12-21 Ibm Semiconductor resistor with uniforms current distribution at its contact surface
US3674995A (en) * 1970-08-31 1972-07-04 Texas Instruments Inc Computer controlled device testing and subsequent arbitrary adjustment of device characteristics
US4395293A (en) * 1981-03-23 1983-07-26 Hughes Aircraft Company Accelerated annealing of gallium arsenide solar cells
US4606781A (en) * 1984-10-18 1986-08-19 Motorola, Inc. Method for resistor trimming by metal migration
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
US4782202A (en) * 1986-12-29 1988-11-01 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for resistance adjustment of thick film thermal print heads
US4820657A (en) * 1987-02-06 1989-04-11 Georgia Tech Research Corporation Method for altering characteristics of junction semiconductor devices
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US9202964B2 (en) 2010-03-01 2015-12-01 First Solar, Inc. System and method for photovoltaic device temperature control while conditioning a photovoltaic device
US8772058B2 (en) * 2012-02-02 2014-07-08 Harris Corporation Method for making a redistributed wafer using transferrable redistribution layers
WO2014143813A1 (en) * 2013-03-15 2014-09-18 First Solar System and method for photovoltaic device temperature control while conditioning a photovoltaic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91981C (de) * 1951-08-24
US2639246A (en) * 1951-11-29 1953-05-19 Gen Electric Method for stabilizing semiconductor material
US2725317A (en) * 1952-04-24 1955-11-29 Bell Telephone Labor Inc Method of fabricating and heat treating semiconductors
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US3148129A (en) * 1959-10-12 1964-09-08 Bell Telephone Labor Inc Metal film resistors
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate

Also Published As

Publication number Publication date
DE1515884A1 (de) 1969-12-18
DE1515884B2 (de) 1973-04-12
US3333326A (en) 1967-08-01
DE1515884C3 (de) 1973-10-31
NL6507672A (de) 1965-12-30

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