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CH416574A - Process for the production of semiconductor rods by drawing from the melt - Google Patents

Process for the production of semiconductor rods by drawing from the melt

Info

Publication number
CH416574A
CH416574A CH1350163A CH1350163A CH416574A CH 416574 A CH416574 A CH 416574A CH 1350163 A CH1350163 A CH 1350163A CH 1350163 A CH1350163 A CH 1350163A CH 416574 A CH416574 A CH 416574A
Authority
CH
Switzerland
Prior art keywords
melt
production
semiconductor rods
rods
semiconductor
Prior art date
Application number
CH1350163A
Other languages
German (de)
Inventor
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH416574A publication Critical patent/CH416574A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1350163A 1963-03-13 1963-11-04 Process for the production of semiconductor rods by drawing from the melt CH416574A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1963S0084132 DE1256626B (en) 1963-03-13 1963-03-13 Process for the production of semiconductor rods by drawing from the melt

Publications (1)

Publication Number Publication Date
CH416574A true CH416574A (en) 1966-07-15

Family

ID=7511486

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1350163A CH416574A (en) 1963-03-13 1963-11-04 Process for the production of semiconductor rods by drawing from the melt

Country Status (4)

Country Link
BE (1) BE645065A (en)
CH (1) CH416574A (en)
DE (1) DE1256626B (en)
GB (1) GB1006034A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4650541A (en) * 1984-09-12 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB775817A (en) * 1954-03-09 1957-05-29 Siemens Ag Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies
DE1002741B (en) * 1955-05-28 1957-02-21 Siemens Ag Process for the production in the melting process and / or for remelting an inorganic stoechiometric compound in crystalline form
NL237834A (en) * 1958-04-09
NL103463C (en) * 1958-07-11
NL133150C (en) * 1959-12-23

Also Published As

Publication number Publication date
BE645065A (en) 1964-09-14
DE1256626B (en) 1967-12-21
GB1006034A (en) 1965-09-29

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