CH414029A - Vorrichtung zur Umwandlung elektrischer Energie in Lichtenergie - Google Patents

Vorrichtung zur Umwandlung elektrischer Energie in Lichtenergie

Info

Publication number: CH414029A
Authority: CH; Switzerland
Prior art keywords: energy; converting electrical; electrical energy; light energy; light
Prior art date: 1962-10-30

Application number

CH1335763A

Other languages

English (en)

Inventor

Hayes Dill Frederick

Paul Dumke William

Jewett Lasher Gordon

Ira Nathan Marshall

Original Assignee

Ibm

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1962-10-30

Filing date

1963-10-30

Publication date

1966-05-31

1963-10-30 Application filed by Ibm filed Critical Ibm

1966-05-31 Publication of CH414029A publication Critical patent/CH414029A/de

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Lasers (AREA)

CH1335763A 1962-10-30 1963-10-30 Vorrichtung zur Umwandlung elektrischer Energie in Lichtenergie CH414029A (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US234150A US3248670A (en)	1962-10-30	1962-10-30	Semiconductor laser with optical cavity

Publications (1)

Publication Number	Publication Date
CH414029A true CH414029A (de)	1966-05-31

Family

ID=22880157

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH1335763A CH414029A (de)	1962-10-30	1963-10-30	Vorrichtung zur Umwandlung elektrischer Energie in Lichtenergie

Country Status (6)

Country	Link
US (1)	US3248670A (de)
BE (1)	BE639365A (de)
CH (1)	CH414029A (de)
DE (1)	DE1464711C3 (de)
GB (1)	GB995950A (de)
NL (1)	NL299208A (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3363195A (en) *	1963-07-01	1968-01-09	Bell Telephone Labor Inc	Junction diode maser
US3330991A (en) *	1963-07-12	1967-07-11	Raytheon Co	Non-thermionic electron emission devices
US3359509A (en) *	1964-02-19	1967-12-19	Gen Electric	Semiconductive junction laser with temperature compensation
US3300671A (en) *	1964-03-10	1967-01-24	Gen Electric	Surface-adjacent junction electroluminescent device
US3531735A (en) *	1966-06-28	1970-09-29	Gen Electric	Semiconductor laser having grooves to prevent radiation transverse to the optical axis
US3701047A (en) *	1966-08-16	1972-10-24	Rca Corp	Semiconductor laser devices utilizing light reflective metallic layers
US3522388A (en) *	1966-11-30	1970-07-28	Norton Research Corp	Electroluminescent diode light source having a permanent implanted opaque surface layer mask
US3522389A (en) *	1966-12-06	1970-07-28	Norton Research Corp	Masked film recording electroluminescent diode light source having a transparent filled mask aperture
US3526851A (en) *	1967-07-10	1970-09-01	Rca Corp	Filamentary structure injection laser having a very narrow active junction
DE1614846B2 (de) *	1967-07-26	1976-09-23	Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm	Halbleiterdiodenanordnung
US3824493A (en) *	1972-09-05	1974-07-16	Bell Telephone Labor Inc	Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
NL7312139A (de) *	1972-09-08	1974-03-12
GB2175176A (en) *	1985-05-10	1986-11-19	Philips Electronic And Assaoci	Signal transmission arrangement, a transmitter and a receiver for such an arrangement and a communication system including such an arrangement

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2953730A (en) *	1952-11-07	1960-09-20	Rca Corp	High frequency semiconductor devices
NL121810C (de) *	1955-11-04
US3039362A (en) *	1958-05-09	1962-06-19	Ca Nat Research Council	Narrow band interference filter
US3102201A (en) *	1958-12-15	1963-08-27	Rca Corp	Semiconductor device for generating modulated radiation
USRE25632E (en) *	1960-01-11	1964-08-18		Optical maser
BE636587A (de) *	1960-10-07

0
- BE BE639365D patent/BE639365A/xx unknown
- NL NL299208D patent/NL299208A/xx unknown
1962
- 1962-10-30 US US234150A patent/US3248670A/en not_active Expired - Lifetime
1963
- 1963-10-25 DE DE1464711A patent/DE1464711C3/de not_active Expired
- 1963-10-30 CH CH1335763A patent/CH414029A/de unknown
- 1963-10-30 GB GB42817/63A patent/GB995950A/en not_active Expired

Also Published As

Publication number	Publication date
NL299208A (de)
DE1464711C3 (de)	1974-03-28
US3248670A (en)	1966-04-26
DE1464711A1 (de)	1969-05-14
BE639365A (de)
GB995950A (en)	1965-06-23
DE1464711B2 (de)	1973-08-23

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