CH409574A - Verfahren zur Herstellung eines Halbleiter-Bauelementes - Google Patents
Verfahren zur Herstellung eines Halbleiter-BauelementesInfo
- Publication number
- CH409574A CH409574A CH42263A CH42263A CH409574A CH 409574 A CH409574 A CH 409574A CH 42263 A CH42263 A CH 42263A CH 42263 A CH42263 A CH 42263A CH 409574 A CH409574 A CH 409574A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- semiconductor component
- semiconductor
- component
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
- Y10T29/4921—Contact or terminal manufacturing by assembling plural parts with bonding
- Y10T29/49211—Contact or terminal manufacturing by assembling plural parts with bonding of fused material
- Y10T29/49213—Metal
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Silicon Compounds (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0079972 | 1962-06-19 | ||
AT688062A AT237751B (de) | 1962-08-28 | 1962-08-28 | Verfahren zur Herstellung eines Halbleiterbauelementes |
Publications (1)
Publication Number | Publication Date |
---|---|
CH409574A true CH409574A (de) | 1966-03-15 |
Family
ID=25603393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH42263A CH409574A (de) | 1962-06-19 | 1963-01-14 | Verfahren zur Herstellung eines Halbleiter-Bauelementes |
Country Status (5)
Country | Link |
---|---|
US (1) | US3268975A (de) |
BE (1) | BE633796A (de) |
CH (1) | CH409574A (de) |
DE (1) | DE1209212B (de) |
GB (1) | GB1019332A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6018192A (en) * | 1998-07-30 | 2000-01-25 | Motorola, Inc. | Electronic device with a thermal control capability |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2364501A (en) * | 1941-04-04 | 1944-12-05 | Bliley Electric Company | Piezoelectric crystal apparatus |
US2462218A (en) * | 1945-04-17 | 1949-02-22 | Bell Telephone Labor Inc | Electrical translator and method of making it |
US2719373A (en) * | 1952-05-27 | 1955-10-04 | Univis Lens Co | Apparatus for etching surfaces |
DE966879C (de) * | 1953-02-21 | 1957-09-12 | Standard Elektrik Ag | Verfahren zur Reinigung und/oder Abtragung von Halbleitermaterial, insbesondere von Germanium- und Siliziumsubstanz |
US2788300A (en) * | 1954-03-10 | 1957-04-09 | Sylvania Electric Prod | Processing of alloy junction devices |
DE1040135B (de) * | 1956-10-27 | 1958-10-02 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen aus Silicium od. dgl. durch Anwendung eines chemischen AEtzvorganges an der Stelle des p-n-UEberganges |
US3079254A (en) * | 1959-01-26 | 1963-02-26 | George W Crowley | Photographic fabrication of semiconductor devices |
DE1149222B (de) * | 1961-08-15 | 1963-05-22 | Licentia Gmbh | Vorrichtung zum AEtzen von Halbleiterkoerpern |
-
0
- BE BE633796D patent/BE633796A/xx unknown
-
1963
- 1963-01-14 CH CH42263A patent/CH409574A/de unknown
- 1963-02-19 US US259581A patent/US3268975A/en not_active Expired - Lifetime
- 1963-02-28 GB GB8162/63A patent/GB1019332A/en not_active Expired
- 1963-08-16 DE DES86760A patent/DE1209212B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1209212B (de) | 1966-01-20 |
BE633796A (de) | |
US3268975A (en) | 1966-08-30 |
GB1019332A (en) | 1966-02-02 |
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