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CH390379A - Controllable semiconductor valve arrangement - Google Patents

Controllable semiconductor valve arrangement

Info

Publication number
CH390379A
CH390379A CH653761A CH653761A CH390379A CH 390379 A CH390379 A CH 390379A CH 653761 A CH653761 A CH 653761A CH 653761 A CH653761 A CH 653761A CH 390379 A CH390379 A CH 390379A
Authority
CH
Switzerland
Prior art keywords
valve arrangement
controllable semiconductor
semiconductor valve
controllable
arrangement
Prior art date
Application number
CH653761A
Other languages
German (de)
Inventor
Meissen Wolfgang
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH390379A publication Critical patent/CH390379A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/145Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/155Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/19Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only arranged for operation in series, e.g. for voltage multiplication
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P7/00Arrangements for regulating or controlling the speed or torque of electric DC motors
    • H02P7/06Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual DC dynamo-electric motor by varying field or armature current
    • H02P7/18Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual DC dynamo-electric motor by varying field or armature current by master control with auxiliary power
    • H02P7/24Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual DC dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices
    • H02P7/28Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual DC dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices using semiconductor devices
    • H02P7/285Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual DC dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices using semiconductor devices controlling armature supply only
    • H02P7/292Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual DC dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices using semiconductor devices controlling armature supply only using static converters, e.g. AC to DC
    • H02P7/293Arrangements for regulating or controlling the speed or torque of electric DC motors for regulating or controlling an individual DC dynamo-electric motor by varying field or armature current by master control with auxiliary power using discharge tubes or semiconductor devices using semiconductor devices controlling armature supply only using static converters, e.g. AC to DC using phase control

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
CH653761A 1960-07-29 1961-06-05 Controllable semiconductor valve arrangement CH390379A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0069670 1960-07-29

Publications (1)

Publication Number Publication Date
CH390379A true CH390379A (en) 1965-04-15

Family

ID=7501148

Family Applications (1)

Application Number Title Priority Date Filing Date
CH653761A CH390379A (en) 1960-07-29 1961-06-05 Controllable semiconductor valve arrangement

Country Status (4)

Country Link
CH (1) CH390379A (en)
DE (1) DE1438588A1 (en)
FR (1) FR1339503A (en)
GB (1) GB913978A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3299347A (en) * 1963-03-29 1967-01-17 Tokyo Shibaura Electric Co Starting device for gradually applying current to a load by means of parallel branch circuits

Also Published As

Publication number Publication date
DE1438588A1 (en) 1968-10-17
GB913978A (en) 1962-12-28
FR1339503A (en) 1963-10-11

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