CH377003A - Transistor et procédé de fabrication dudit transistor - Google Patents
Transistor et procédé de fabrication dudit transistorInfo
- Publication number
- CH377003A CH377003A CH8085059A CH8085059A CH377003A CH 377003 A CH377003 A CH 377003A CH 8085059 A CH8085059 A CH 8085059A CH 8085059 A CH8085059 A CH 8085059A CH 377003 A CH377003 A CH 377003A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US775164A US2956913A (en) | 1958-11-20 | 1958-11-20 | Transistor and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
CH377003A true CH377003A (fr) | 1964-04-30 |
Family
ID=25103519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH8085059A CH377003A (fr) | 1958-11-20 | 1959-11-20 | Transistor et procédé de fabrication dudit transistor |
Country Status (3)
Country | Link |
---|---|
US (1) | US2956913A (fr) |
CH (1) | CH377003A (fr) |
GB (1) | GB878792A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL262701A (fr) * | 1960-03-25 | |||
US3098954A (en) * | 1960-04-27 | 1963-07-23 | Texas Instruments Inc | Mesa type transistor and method of fabrication thereof |
DE1250002B (de) * | 1960-11-04 | 1967-09-14 | International Business Machines Corporation, Armonk, NY (V St A) | I Diffusionsverfahren zum Herstellen einer Esaki Diode und nach diesem Verfahren hergestellte Esaki-Diode |
DE1160106B (de) * | 1960-11-11 | 1963-12-27 | Intermetall | Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen |
US3225198A (en) * | 1961-05-16 | 1965-12-21 | Hughes Aircraft Co | Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region |
US3173816A (en) * | 1961-08-04 | 1965-03-16 | Motorola Inc | Method for fabricating alloyed junction semiconductor assemblies |
DE1199897B (de) * | 1962-04-03 | 1965-09-02 | Philips Nv | Verfahren zur Herstellung einer Sperrschicht in einem n-leitenden Cadmiumsulfidkoerper |
NL298286A (fr) * | 1962-09-24 | |||
NL298006A (fr) * | 1962-12-07 | 1900-01-01 | ||
US3473093A (en) * | 1965-08-18 | 1969-10-14 | Ibm | Semiconductor device having compensated barrier zones between n-p junctions |
US3658606A (en) * | 1969-04-01 | 1972-04-25 | Ibm | Diffusion source and method of producing same |
JPS49108969A (fr) * | 1973-02-07 | 1974-10-16 | ||
JPS6011457B2 (ja) * | 1973-04-02 | 1985-03-26 | 株式会社日立製作所 | デイポジシヨン法 |
US3897286A (en) * | 1974-06-21 | 1975-07-29 | Gen Electric | Method of aligning edges of emitter and its metalization in a semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE25952E (en) * | 1954-04-01 | 1965-12-14 | Semi-conductor devices | |
BE547274A (fr) * | 1955-06-20 |
-
1958
- 1958-11-20 US US775164A patent/US2956913A/en not_active Expired - Lifetime
-
1959
- 1959-11-16 GB GB38792/59A patent/GB878792A/en not_active Expired
- 1959-11-20 CH CH8085059A patent/CH377003A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
US2956913A (en) | 1960-10-18 |
GB878792A (en) | 1961-10-04 |
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