CH335368A - Transistor - Google Patents
TransistorInfo
- Publication number
- CH335368A CH335368A CH335368DA CH335368A CH 335368 A CH335368 A CH 335368A CH 335368D A CH335368D A CH 335368DA CH 335368 A CH335368 A CH 335368A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/04—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
- C08L27/06—Homopolymers or copolymers of vinyl chloride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
- C08L9/02—Copolymers with acrylonitrile
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH5422657 | 1957-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH335368A true CH335368A (fr) | 1958-12-31 |
Family
ID=4519135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH335368D CH335368A (fr) | 1957-12-28 | 1957-12-28 | Transistor |
Country Status (7)
Country | Link |
---|---|
US (1) | US3038087A (de) |
BE (1) | BE573933A (de) |
CH (1) | CH335368A (de) |
DE (1) | DE1132662B (de) |
FR (1) | FR1256523A (de) |
GB (1) | GB905945A (de) |
NL (1) | NL107737C (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1115837B (de) * | 1958-09-04 | 1961-10-26 | Intermetall | Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper |
DE1214791B (de) * | 1960-08-12 | 1966-04-21 | Telefunken Patent | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3177414A (en) * | 1961-07-26 | 1965-04-06 | Nippon Electric Co | Device comprising a plurality of transistors |
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
US3735481A (en) * | 1967-08-16 | 1973-05-29 | Hitachi Ltd | Method of manufacturing an integrated circuit having a transistor isolated by the collector region |
US3611058A (en) * | 1970-05-11 | 1971-10-05 | Gen Motors Corp | Varactor diode |
JPS6174369A (ja) * | 1984-09-20 | 1986-04-16 | Sony Corp | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL84061C (de) * | 1948-06-26 | |||
BE490958A (de) * | 1948-09-24 | |||
NL90299C (de) * | 1950-03-21 | |||
NL83838C (de) * | 1952-12-01 | 1957-01-15 | ||
US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
US2870345A (en) * | 1954-02-02 | 1959-01-20 | Philips Corp | Amplification control of a transistor |
US2801348A (en) * | 1954-05-03 | 1957-07-30 | Rca Corp | Semiconductor devices |
US2889499A (en) * | 1954-09-27 | 1959-06-02 | Ibm | Bistable semiconductor device |
US2915647A (en) * | 1955-07-13 | 1959-12-01 | Bell Telephone Labor Inc | Semiconductive switch and negative resistance |
US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
-
1957
- 1957-12-28 CH CH335368D patent/CH335368A/fr unknown
-
1958
- 1958-12-16 BE BE573933A patent/BE573933A/fr unknown
- 1958-12-17 GB GB40796/58A patent/GB905945A/en not_active Expired
- 1958-12-18 FR FR38930A patent/FR1256523A/fr not_active Expired
- 1958-12-18 NL NL234353A patent/NL107737C/xx active
- 1958-12-23 DE DES61123A patent/DE1132662B/de active Pending
- 1958-12-24 US US782760A patent/US3038087A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1115837B (de) * | 1958-09-04 | 1961-10-26 | Intermetall | Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper |
DE1214791B (de) * | 1960-08-12 | 1966-04-21 | Telefunken Patent | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
DE1214791C2 (de) * | 1960-08-12 | 1966-11-10 | Telefunken Patent | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
Also Published As
Publication number | Publication date |
---|---|
DE1132662B (de) | 1962-07-05 |
US3038087A (en) | 1962-06-05 |
FR1256523A (fr) | 1961-03-24 |
GB905945A (en) | 1962-09-12 |
BE573933A (fr) | 1959-04-16 |
NL107737C (de) | 1964-03-16 |
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