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CA674121A - Method and apparatus for producing a strip of hyperpure semiconductor material - Google Patents

Method and apparatus for producing a strip of hyperpure semiconductor material

Info

Publication number
CA674121A
CA674121A CA674121A CA674121DA CA674121A CA 674121 A CA674121 A CA 674121A CA 674121 A CA674121 A CA 674121A CA 674121D A CA674121D A CA 674121DA CA 674121 A CA674121 A CA 674121A
Authority
CA
Canada
Prior art keywords
strip
producing
semiconductor material
hyperpure
hyperpure semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA674121A
Inventor
Keller Wolfgang
Berger Gunther
Reuschel Konrad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Original Assignee
Siemens Schuckertwerke AG
Publication date
Application granted granted Critical
Publication of CA674121A publication Critical patent/CA674121A/en
Expired legal-status Critical Current

Links

CA674121A Method and apparatus for producing a strip of hyperpure semiconductor material Expired CA674121A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA674121T

Publications (1)

Publication Number Publication Date
CA674121A true CA674121A (en) 1963-11-12

Family

ID=35974478

Family Applications (1)

Application Number Title Priority Date Filing Date
CA674121A Expired CA674121A (en) Method and apparatus for producing a strip of hyperpure semiconductor material

Country Status (1)

Country Link
CA (1) CA674121A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397042A (en) * 1963-10-15 1968-08-13 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3649210A (en) * 1965-07-10 1972-03-14 Siemens Ag Apparatus for crucible-free zone-melting of crystalline materials
US4650541A (en) * 1984-09-12 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3397042A (en) * 1963-10-15 1968-08-13 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3649210A (en) * 1965-07-10 1972-03-14 Siemens Ag Apparatus for crucible-free zone-melting of crystalline materials
US4650541A (en) * 1984-09-12 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for the horizontal, crucible-free growth of silicon sheet crystals

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