CA2576160A1 - Conductive element with lateral oxidation barrier - Google Patents
Conductive element with lateral oxidation barrier Download PDFInfo
- Publication number
- CA2576160A1 CA2576160A1 CA002576160A CA2576160A CA2576160A1 CA 2576160 A1 CA2576160 A1 CA 2576160A1 CA 002576160 A CA002576160 A CA 002576160A CA 2576160 A CA2576160 A CA 2576160A CA 2576160 A1 CA2576160 A1 CA 2576160A1
- Authority
- CA
- Canada
- Prior art keywords
- region
- light emitting
- layer
- conducting element
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003647 oxidation Effects 0.000 title claims abstract 12
- 238000007254 oxidation reaction Methods 0.000 title claims abstract 12
- 230000004888 barrier function Effects 0.000 title claims abstract 10
- 239000000463 material Substances 0.000 claims abstract 41
- 239000000758 substrate Substances 0.000 claims abstract 10
- 239000004065 semiconductor Substances 0.000 claims abstract 5
- 230000015572 biosynthetic process Effects 0.000 claims abstract 2
- 230000004048 modification Effects 0.000 claims abstract 2
- 238000012986 modification Methods 0.000 claims abstract 2
- 125000006850 spacer group Chemical group 0.000 claims 12
- 230000003287 optical effect Effects 0.000 claims 7
- 230000001747 exhibiting effect Effects 0.000 claims 5
- 230000001590 oxidative effect Effects 0.000 claims 5
- 238000001465 metallisation Methods 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000009957 hemming Methods 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.
Claims (23)
1. An electrical current conducting element comprising, at least a first oxidizable layer, said oxidizable layer comprising a material of a first conductivity type;
said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance;
said first oxidizable layer being modified within a laterally oriented second region forming a lateral oxidation barrier before said oxidizable layer is oxidized, said lateral oxidation barrier defining said second region which is not significantly oxidized and having electrical resistance significantly lower than said first region, a material of a second conductivity type residing above or below said at least a first oxidizable layer, said first oxidizable layer and said material of a second conductivity type forming an electrical junction; and a light emitting material situated between said first oxidizable layer and said material of a second conductivity type.
said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance;
said first oxidizable layer being modified within a laterally oriented second region forming a lateral oxidation barrier before said oxidizable layer is oxidized, said lateral oxidation barrier defining said second region which is not significantly oxidized and having electrical resistance significantly lower than said first region, a material of a second conductivity type residing above or below said at least a first oxidizable layer, said first oxidizable layer and said material of a second conductivity type forming an electrical junction; and a light emitting material situated between said first oxidizable layer and said material of a second conductivity type.
2. The conducting element recited in claim 1, further comprising at least one nonoxidizing layer adjacent to said oxidizing layer, and in which said modification of said first oxidizing layer comprises interdiffusion of said first oxidizing layer with said at least one nonoxidizing layer.
3. The conducting element recited in claim 1 wherein said second region is surrounded by said first region, forming an aperture.
4. The conduction element of claim 2 wherein said first conductivity type is a p-type material and wherein said interdiffusion has been enhanced by an ionic species selected from the group including: carbon, zinc, beryllium, nitrogen or magnesium.
5. The conducting element recited in claim 2 wherein said first conductivity type is an n-type material and wherein said interdiffusion has been enhanced by an ionic species selected from the group including: silicon or tellurium.
6. The conducting element recited in claim 2 wherein said interdiffusion is provided by ion enhanced interdiffusion.
7. The conducting element recited in claim 2 wherein said interdiffusion is provided by impurity induced layer disordering.
8. The conducting element recited in claim 2 wherein said interdiffusion is provided by optically induced local heating.
9. The conductive element recited in claim 1 wherein said conductive element further comprises:
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror and below said light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
a first contact for electrically contacting to said conducting element, and;
a second contact for electrically contacting to said material of a second conductive type;
said first and second mirrors and all material between forming an optical cavity having a cavity resonance at a nominal wavelength;
means for injecting electrical current through said conducting element into said light emitting material, thereby causing said conductive element to emit a beam of light at or near said nominal wavelength.
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror and below said light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
a first contact for electrically contacting to said conducting element, and;
a second contact for electrically contacting to said material of a second conductive type;
said first and second mirrors and all material between forming an optical cavity having a cavity resonance at a nominal wavelength;
means for injecting electrical current through said conducting element into said light emitting material, thereby causing said conductive element to emit a beam of light at or near said nominal wavelength.
10. The conductive element recited in claim 9 wherein said second region is surrounded by said first region, thereby forming an aperture.
11. A vertical cavity surface emitting laser comprising:
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror;
a light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
at least a first oxidizable layer, said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance, said first oxidizable layer being modified within a laterally oriented second region forming a lateral oxidation barrier before said oxidizable layer is oxidized, said lateral oxidation barrier defining said second region which is not significantly oxidized and having electrical resistance significantly lower than said first region;
a first contact for electrically contacting to said conducting element;
a second contact for electrically contacting to said material of a second conductive type;
said first and second mirrors and all material between forming an optical cavity having a cavity resonance at a nominal wavelength; and means for injecting electrical current through said conducting element and into said light emitting material, thereby causing said light emitting device to emit a beam of light at or near said nominal wavelength.
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror;
a light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
at least a first oxidizable layer, said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance, said first oxidizable layer being modified within a laterally oriented second region forming a lateral oxidation barrier before said oxidizable layer is oxidized, said lateral oxidation barrier defining said second region which is not significantly oxidized and having electrical resistance significantly lower than said first region;
a first contact for electrically contacting to said conducting element;
a second contact for electrically contacting to said material of a second conductive type;
said first and second mirrors and all material between forming an optical cavity having a cavity resonance at a nominal wavelength; and means for injecting electrical current through said conducting element and into said light emitting material, thereby causing said light emitting device to emit a beam of light at or near said nominal wavelength.
12. A light emitter comprising:
a first mirror;
a light emitting material;
a second mirror;
at least a first oxidizable layer, said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance, said first oxidizable layer being modified within a laterally oriented second region forming a lateral oxidation barrier before said oxidizable layer is oxidized, said lateral oxidation barrier defining said second region which is not significantly oxidized and having electrical resistance significantly lower than said first region.
a first mirror;
a light emitting material;
a second mirror;
at least a first oxidizable layer, said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance, said first oxidizable layer being modified within a laterally oriented second region forming a lateral oxidation barrier before said oxidizable layer is oxidized, said lateral oxidation barrier defining said second region which is not significantly oxidized and having electrical resistance significantly lower than said first region.
13. The light emitter recited in claim 12 further comprising a nonoxidizing layer, said oxidizing layer and said nonoxidizing layer being interdiffused in said second region, in which said oxidizing layer comprises oxidized portions and interdiffused portions of an initial material, said nonoxidizing layer and said initial material respectively comprising material pairs selected from the group consisting essentially of: GaAsSb/AlAsSb, AlGaAsSb/AlGaAsSb, InGaAs /AlGaAsSb, and InGaAsP/AlGaAsSb.
14. An electrical current conducting element comprising:
at least a first oxidizable layer, said first oxidizable layer comprising a III/V semiconductor material, said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance, said first oxidizable layer having a laterally oriented second region which is not significantly oxidized and having electrical resistance significantly lower than said first region, and wherein said second region further characterized as being a semiconductor of a first conductive type;
another layer of material of a second conductive type residing above or below said second region, said second region and said material of a second conductive type forming an electrical junction;
at least one pit disposed in said electrical current conducting element, said at least one pit disposed proximal to said first region and distal from said laterally oriented second region, said at least one pit not hemming said laterally oriented second region, and a light emitting material disposed between said second region and said another layer of material of a second conductive type, forming a light emitting element.
at least a first oxidizable layer, said first oxidizable layer comprising a III/V semiconductor material, said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance, said first oxidizable layer having a laterally oriented second region which is not significantly oxidized and having electrical resistance significantly lower than said first region, and wherein said second region further characterized as being a semiconductor of a first conductive type;
another layer of material of a second conductive type residing above or below said second region, said second region and said material of a second conductive type forming an electrical junction;
at least one pit disposed in said electrical current conducting element, said at least one pit disposed proximal to said first region and distal from said laterally oriented second region, said at least one pit not hemming said laterally oriented second region, and a light emitting material disposed between said second region and said another layer of material of a second conductive type, forming a light emitting element.
15. The electrical current conducting element recited in claim 14, wherein said at least one pit is provided for allowing said first region to be oxidized.
16. The electrical current conducting element recited in claim 14, wherein said second region is surrounded by said first region, and thereby forming an aperture.
17. The light emitting element recited in claim 14, wherein said pit is filled with a material after formation of said pit.
18. The light emitting element recited in claim 14, wherein said light emitting element further comprises:
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror and below said light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
said first and second mirrors and all material between forming an optical resonator having an optical resonance at a nominal wavelength; and means for injecting electrical current through said optical resonator and into said light emitting material, thereby causing said light emitting device to emit a beam of light.
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror and below said light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
said first and second mirrors and all material between forming an optical resonator having an optical resonance at a nominal wavelength; and means for injecting electrical current through said optical resonator and into said light emitting material, thereby causing said light emitting device to emit a beam of light.
19. The light emitting element recited in claim 14, further comprising top and bottom electrical contacts and interconnect metallization in electrical communication with said electrical junction.
20. A light emitting device comprising:
at least a first oxidizable layer;
said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance;
said first oxidizable layer having a laterally oriented second region which is not significantly oxidized and having electrical resistance significantly lower than said first region, said second region further characterized as being a semiconductor of a first conductive type;
at least one pit disposed in said electrical current conducting element, said at least one pit disposed proximal to said first region and distal from said laterally oriented second region, said at least one pit not hemming said laterally oriented second region;
said conducting element further comprising another layer of material of a second conductive type residing above or below said second region, said second region and said material of a second conductive type forming an electrical junction;
a light emitting material disposed between said conducting element and said another layer of material of a second conductive type, forming a light emitting element;
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror and below said light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
said first and second mirrors and all material between forming an optical resonator having an optical resonance at a nominal wavelength; and means for injecting electrical current into said light emitting material, thereby causing said light emitting device to emit a beam of light.
at least a first oxidizable layer;
said first oxidizable layer being significantly oxidized in a laterally oriented first region, said first region exhibiting high electrical resistance;
said first oxidizable layer having a laterally oriented second region which is not significantly oxidized and having electrical resistance significantly lower than said first region, said second region further characterized as being a semiconductor of a first conductive type;
at least one pit disposed in said electrical current conducting element, said at least one pit disposed proximal to said first region and distal from said laterally oriented second region, said at least one pit not hemming said laterally oriented second region;
said conducting element further comprising another layer of material of a second conductive type residing above or below said second region, said second region and said material of a second conductive type forming an electrical junction;
a light emitting material disposed between said conducting element and said another layer of material of a second conductive type, forming a light emitting element;
a substrate;
a first mirror situated above said substrate;
a first conductive spacer situated above said first mirror and below said light emitting material;
a second conductive spacer situated above said light emitting material;
a second mirror situated above said second conductive spacer;
said first and second mirrors and all material between forming an optical resonator having an optical resonance at a nominal wavelength; and means for injecting electrical current into said light emitting material, thereby causing said light emitting device to emit a beam of light.
21. The light emitting device recited in claim 20, further comprising top and bottom electrical contacts and interconnect metallization in electrical communication with said electrical junction.
22. The light emitting device recited in claim 21 wherein said interconnect metallization is connected to a bonding pad.
23. The light emitting device recited in claim 21, further comprising at least one layer of semiconductor material above at least a portion of said first region and below at least a portion of said interconnect metallization.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/574,165 | 1995-12-18 | ||
| US08/574,165 US5719891A (en) | 1995-12-18 | 1995-12-18 | Conductive element with lateral oxidation barrier |
| CA002240162A CA2240162C (en) | 1995-12-18 | 1996-12-04 | Conductive element with lateral oxidation barrier |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002240162A Division CA2240162C (en) | 1995-12-18 | 1996-12-04 | Conductive element with lateral oxidation barrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2576160A1 true CA2576160A1 (en) | 1997-06-26 |
| CA2576160C CA2576160C (en) | 2011-04-05 |
Family
ID=37905011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2576160A Expired - Lifetime CA2576160C (en) | 1995-12-18 | 1996-12-04 | Conductive element with lateral oxidation barrier |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2576160C (en) |
-
1996
- 1996-12-04 CA CA2576160A patent/CA2576160C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2576160C (en) | 2011-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6044100A (en) | Lateral injection VCSEL | |
| US5882948A (en) | Method for fabricating a semiconductor device | |
| US6570905B1 (en) | Vertical cavity surface emitting laser with reduced parasitic capacitance | |
| US6936486B2 (en) | Low voltage multi-junction vertical cavity surface emitting laser | |
| EP0926786B1 (en) | Vertical cavity surface-emitting laser with separate optical and current guides | |
| US5034958A (en) | Front-surface emitting diode laser | |
| US5283447A (en) | Integration of transistors with vertical cavity surface emitting lasers | |
| US6014400A (en) | Surface-emitting laser and a fabrication method thereof | |
| US5726462A (en) | Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer | |
| US7034331B2 (en) | Material systems for semiconductor tunnel-junction structures | |
| JP3162333B2 (en) | Surface emitting laser and method of manufacturing the same | |
| US5724376A (en) | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding | |
| EP3586369B1 (en) | Integrated circuit implementing a vcsel array or vcsel device | |
| SE501722C2 (en) | Surface emitting laser device with vertical cavity | |
| EP0905835A1 (en) | Independently addressable vertical cavity surface emitting laser arrays with buried selectively oxidized native oxide aperture | |
| US6011811A (en) | Buried heterostructure with aluminum-free active layer and method of making same | |
| US7881359B2 (en) | Surface-emission semiconductor laser device | |
| JP2000196189A (en) | Surface-emission semiconductor laser | |
| Chirovsky et al. | Implant-apertured and index-guided vertical-cavity surface-emitting lasers (I 2-VCSELs) | |
| US7368316B2 (en) | Surface-emission semiconductor laser device | |
| EP0907230B1 (en) | Independently addressable semiconductor laser arrays with buried selectively oxidized native oxide apertures | |
| Chua et al. | Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays | |
| US6668005B2 (en) | Pre-fusion oxidized and wafer-bonded vertical cavity laser | |
| CA2576160A1 (en) | Conductive element with lateral oxidation barrier | |
| WO2004047242A1 (en) | Low voltage multi-junction vertical cavity surface emitting laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKEX | Expiry |
Effective date: 20161205 |