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CA2543151A1 - Gan substrate, method of growing gan and method of producing gan substrate - Google Patents

Gan substrate, method of growing gan and method of producing gan substrate Download PDF

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Publication number
CA2543151A1
CA2543151A1 CA002543151A CA2543151A CA2543151A1 CA 2543151 A1 CA2543151 A1 CA 2543151A1 CA 002543151 A CA002543151 A CA 002543151A CA 2543151 A CA2543151 A CA 2543151A CA 2543151 A1 CA2543151 A1 CA 2543151A1
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CA
Canada
Prior art keywords
regions
facet
facets
valleys
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002543151A
Other languages
French (fr)
Other versions
CA2543151C (en
Inventor
Kensaku Motoki
Ryu Hirota
Takuji Okahisa
Seiji Nakahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002269387A external-priority patent/JP3801125B2/en
Application filed by Individual filed Critical Individual
Priority to CA002670071A priority Critical patent/CA2670071A1/en
Publication of CA2543151A1 publication Critical patent/CA2543151A1/en
Application granted granted Critical
Publication of CA2543151C publication Critical patent/CA2543151C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
CA002543151A 2001-10-09 2002-10-01 Gan substrate, method of growing gan and method of producing gan substrate Expired - Fee Related CA2543151C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002670071A CA2670071A1 (en) 2001-10-09 2002-10-01 Gan substrate, method of growing gan and method of producing gan substrate

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001311018 2001-10-09
JP2001-311018 2001-10-09
JP2002-269387 2002-09-17
JP2002269387A JP3801125B2 (en) 2001-10-09 2002-09-17 Single crystal gallium nitride substrate, method for crystal growth of single crystal gallium nitride, and method for manufacturing single crystal gallium nitride substrate
CA002406347A CA2406347C (en) 2001-10-09 2002-10-01 Gan substrate, method of growing gan and method of producing gan substrate

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CA002406347A Division CA2406347C (en) 2001-10-09 2002-10-01 Gan substrate, method of growing gan and method of producing gan substrate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CA002670071A Division CA2670071A1 (en) 2001-10-09 2002-10-01 Gan substrate, method of growing gan and method of producing gan substrate

Publications (2)

Publication Number Publication Date
CA2543151A1 true CA2543151A1 (en) 2003-04-09
CA2543151C CA2543151C (en) 2009-09-08

Family

ID=36577311

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002543151A Expired - Fee Related CA2543151C (en) 2001-10-09 2002-10-01 Gan substrate, method of growing gan and method of producing gan substrate

Country Status (1)

Country Link
CA (1) CA2543151C (en)

Also Published As

Publication number Publication date
CA2543151C (en) 2009-09-08

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