CA2490848A1 - Pixel circuit and driving method for fast compensated programming of amoled displays - Google Patents
Pixel circuit and driving method for fast compensated programming of amoled displays Download PDFInfo
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- CA2490848A1 CA2490848A1 CA002490848A CA2490848A CA2490848A1 CA 2490848 A1 CA2490848 A1 CA 2490848A1 CA 002490848 A CA002490848 A CA 002490848A CA 2490848 A CA2490848 A CA 2490848A CA 2490848 A1 CA2490848 A1 CA 2490848A1
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- pixel circuit
- oled
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- 238000000034 method Methods 0.000 title abstract description 9
- 229920001621 AMOLED Polymers 0.000 title description 4
- 239000003990 capacitor Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 3
- 102100030341 Ethanolaminephosphotransferase 1 Human genes 0.000 description 2
- 101100172525 Homo sapiens SELENOI gene Proteins 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
- G09G2300/0866—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Disclosed is a technique for driving a column of pixels implemented using light emitting elements, in particular, OLEDs. The technique includes a driving method to generate a gate-source voltage independent of the driver threshold voltage and OLED
voltage.
voltage.
Description
FIELD OF THE INVENTION
The present invention generally relates to a light emitting device display, and more particularly.
to a driving technique of the active matrix organic light emitting diode (AMOLED), and for enhancement of OLED brightness stability by using compensation.
SUMMARY OF INVENTION
The invention provides a hybrid programming technique, suitable for use in AMOLED. Each pixel has a driving thin film transistor (TFT) whose overdrive voltage is generated independent from its threshold voltage and the OLED voltage.
Advantages The present invention provides a stable current independent of the threshold voltage shift of the driving TFT and the OLED degradation under prolonged display operation, so as to efficiently improve the display product quality. Moreover, because of its simplicity, it provides higher yield, lower fabrication cost and higher resolution than its counterparts. Most importantly, since the settling time of new pixel is much smaller than the present pixels, it is suitable for large-area display such as high definition TV.
DETAILED DESCRIPTION OF THE INVENTION
The present invention involves a technique for driving a column of pixels to provide stable OLED operation.
FIG. 1 (a-c) shows a pixel circuit along with its control signals. This method is valid with complementary (p-type transistor) device as well.
The pixel circuit comprises three transistors T1, T2 and T3, a storage capacitor 12 and an organic light-emitting diode (OLED) 10. The pixel circuit is connected to two select lines (SELI and SEL2), a signal line (VDATA), a bias line (IBIAS), a voltage line (VDD), and a common ~,~round.
Transistors Tl, T2 and T3 can be amorphous silicon, poly silicon, or organic thin-film transistors (TFT) or standard MOSFETs in CMOS technology.
The source terminal of driving transistor Tl is connected to the anode electrode of the OLED 10. The drain terminal of T1 is connected to VDD, and the gate terminal of Tl is connected to the signal line (VDATA) through T2. The storage capacitor is connected between the source and gate of Tl.
Transistor T2 is a switch. The gate terminal of T2 is connected to the first select line (SEL1). The drain terminal of TZ is connected to the signal line (VDATA), and the source terminal is connected to the gate terminal of Tl.
Transistor T3 is a switch. The gate terminal of T3 is connected to the second select line (SEL2). The source terminal of T3 is connected to the bias line (IB1AS), and the drain terminal is connected to the anode terminal of the OLED 10. The cathode electrode of the OLED 10 is connected to the common ground.
The operation of pixel presented in Fig 1 (b and c) consists of two cycles:
programming and driving cycles. In the programming cycles node B is charged to negative of the threshold voltage of Tl and node A is charged to programming voltage (VP) resulting in the gate-source voltage of T1 as:
YGS = VP - (-YT ) = YP + YT .
With reference to the waveform shown on FIG.1 (b) we describe the following operating cycles.
The first operating ~cle: Both select lines are high. A bias current (IB) flows through the IBIAS, and VDATA goes to a bias voltage (VB), resulting in the voltage of node B as:
V ~~me-a = VB - ~I ~ Y~ , Where VT is the threshold voltage of Tl, and ~ is the coefficient is current-voltage (I-V) characteristics of the TFT given by Ibs = (i (VGS - VT)z, The second operatic cycle: While SEL2 is low, and SELL is high, VDATA goes to a programming voltage (VP). Because the OLED capacitance 11 is large, the voltage of node B generated in the previous cycle stays intact. Therefore, the gate-source voltage of TI can be found as:
VGS=VP+AVB+VT, where VGS is the gate-source voltage of Tl, and OVB = ~ -VB (if VB is chosen properly, ~VB will be zero).
The third operating~cycle: SELI goes to zero, and a current independent of the threshold voltage flows through the OLED 10.
The operation of the waveform shown in Fig 1 (c) is exactly the same as above except that in the second operating cycle, T3 is on but ttte bias current (IB) is zero. Because both select lines (SELL and SEL2) have the same timing, they can be connected to a common select line.
FIG. 2 shows the simulation result for the circuit and waveform shown in the FIG.1 (a) and (b). The result shows that the change in the OLED current due 2-volt VT-shift in Tl is almost zero percent for most of the programming voltage.
FIG. 3 (a-c) shows a pixel circuit along with its control signals. This method is valid with complementary (p-type transistor) device as well.
The pixel circuit comprises three transistors T1, T2, T3 and T4, two storage capacitors 32-33, and an organic light-emitting diode (OLED) 30. The pixel circuit is connected to a select line (SEL), a signal line (VDATA), a bias line (IBIAS), a voltage line (VDD), and a common ground.
Transistors T1, T2, T3 and T4 can be amorphous silicon, poly silicon, or organic thin-film transistors (TFT) or standard MOSFETs in CMOS technology.
The source terminal of the driving transistor TI is connected to the cathode electrode of the OLED 30. The drain terminal of TI is connected to the ground, and the gate terminal of Tl is connected to its drain terminal through T2. The storage capacitors 32-33 are in series and connected between the source of T1 and ground.
Transistor T2 is a switch. The gate terminal of T2 is connected to the select line (SEL).
The drain terminal of T2 is connected to the drain terminal of TI, and the source terminal is connected to the gate terminal of TI.
Transistor T3 is a switch. The gate terminal of T3 is connected to the select line (SEL).
The drain terminal of T3 is connected to the signal line (VDATA), and the source terminal is connected to the connected tenminal of the storage capacitors 32-33.
Transistor T4 is a switch. The gate terminal of T4 is connected to the select line (SEL).
The drain terminal of T4 is connected to bias line (IBIAS), and the source terminal is connected to the cathode terminal of the OLED 30. The anode electrode of the is connected to common ground.
The operation of the pixel presented in Fig 3 (b) consists of two operating cycles:
programming cycles and driving cycle. In the programming cycles, the first storage capacitor 32 is charged to a programming voltage plus the threshold voltage (VT) of TI, and the second storage capacitor 33 is charged to zero, resulting in a gate-source voltage ofTl as: VGS=-YP+VT.
With reference to the waveform shown on FIG. 3 (b) we describe the following operating cycles.
The first operating cycle: Both select lines are high. A bias current (IB) flows through the IBIAS, and VDATA goes to a programming voltage (VP), resulting in the stored voltage in the first storage capacitor 32 as:
YCl = R -VP+VT , where VCI is the stored voltage in the first storage capacitor 32, and (i is the coefficient in current-voltage (I-V) characteristics of the TFT given by Ips = p (VGS -VT)Z, The second operating cycle: While SEL is high, VDATA is zero, and IBIAS goes to zero. Because the OLED capacitance 31 and the parasitic capacitance of the bias line (IBIAS) are large, the voltage of node B (and node A) generated in the previous cycle stays untouched. Therefore, the gate-source voltage of Tl can be found as:
VCl = VB-VP+VT, where VGS is the gate-source voltage of Tl, and ~B = IB .
The third operatinyycle: SEL goes to zero, and a current independent of the threshold voltage flows through the OLED 30.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG.1 (a-c) shows the draft diagram of an embodiment of a pixel circuit and its corresponding waveforms.
FIG. Z shows the current stability of the pixel after 2 V VT shift in the driving TFT.
FIG. 3 (a-b) shows the circuit diagram of an embodiment of a pixel circuit and its corresponding waveform.
The present invention generally relates to a light emitting device display, and more particularly.
to a driving technique of the active matrix organic light emitting diode (AMOLED), and for enhancement of OLED brightness stability by using compensation.
SUMMARY OF INVENTION
The invention provides a hybrid programming technique, suitable for use in AMOLED. Each pixel has a driving thin film transistor (TFT) whose overdrive voltage is generated independent from its threshold voltage and the OLED voltage.
Advantages The present invention provides a stable current independent of the threshold voltage shift of the driving TFT and the OLED degradation under prolonged display operation, so as to efficiently improve the display product quality. Moreover, because of its simplicity, it provides higher yield, lower fabrication cost and higher resolution than its counterparts. Most importantly, since the settling time of new pixel is much smaller than the present pixels, it is suitable for large-area display such as high definition TV.
DETAILED DESCRIPTION OF THE INVENTION
The present invention involves a technique for driving a column of pixels to provide stable OLED operation.
FIG. 1 (a-c) shows a pixel circuit along with its control signals. This method is valid with complementary (p-type transistor) device as well.
The pixel circuit comprises three transistors T1, T2 and T3, a storage capacitor 12 and an organic light-emitting diode (OLED) 10. The pixel circuit is connected to two select lines (SELI and SEL2), a signal line (VDATA), a bias line (IBIAS), a voltage line (VDD), and a common ~,~round.
Transistors Tl, T2 and T3 can be amorphous silicon, poly silicon, or organic thin-film transistors (TFT) or standard MOSFETs in CMOS technology.
The source terminal of driving transistor Tl is connected to the anode electrode of the OLED 10. The drain terminal of T1 is connected to VDD, and the gate terminal of Tl is connected to the signal line (VDATA) through T2. The storage capacitor is connected between the source and gate of Tl.
Transistor T2 is a switch. The gate terminal of T2 is connected to the first select line (SEL1). The drain terminal of TZ is connected to the signal line (VDATA), and the source terminal is connected to the gate terminal of Tl.
Transistor T3 is a switch. The gate terminal of T3 is connected to the second select line (SEL2). The source terminal of T3 is connected to the bias line (IB1AS), and the drain terminal is connected to the anode terminal of the OLED 10. The cathode electrode of the OLED 10 is connected to the common ground.
The operation of pixel presented in Fig 1 (b and c) consists of two cycles:
programming and driving cycles. In the programming cycles node B is charged to negative of the threshold voltage of Tl and node A is charged to programming voltage (VP) resulting in the gate-source voltage of T1 as:
YGS = VP - (-YT ) = YP + YT .
With reference to the waveform shown on FIG.1 (b) we describe the following operating cycles.
The first operating ~cle: Both select lines are high. A bias current (IB) flows through the IBIAS, and VDATA goes to a bias voltage (VB), resulting in the voltage of node B as:
V ~~me-a = VB - ~I ~ Y~ , Where VT is the threshold voltage of Tl, and ~ is the coefficient is current-voltage (I-V) characteristics of the TFT given by Ibs = (i (VGS - VT)z, The second operatic cycle: While SEL2 is low, and SELL is high, VDATA goes to a programming voltage (VP). Because the OLED capacitance 11 is large, the voltage of node B generated in the previous cycle stays intact. Therefore, the gate-source voltage of TI can be found as:
VGS=VP+AVB+VT, where VGS is the gate-source voltage of Tl, and OVB = ~ -VB (if VB is chosen properly, ~VB will be zero).
The third operating~cycle: SELI goes to zero, and a current independent of the threshold voltage flows through the OLED 10.
The operation of the waveform shown in Fig 1 (c) is exactly the same as above except that in the second operating cycle, T3 is on but ttte bias current (IB) is zero. Because both select lines (SELL and SEL2) have the same timing, they can be connected to a common select line.
FIG. 2 shows the simulation result for the circuit and waveform shown in the FIG.1 (a) and (b). The result shows that the change in the OLED current due 2-volt VT-shift in Tl is almost zero percent for most of the programming voltage.
FIG. 3 (a-c) shows a pixel circuit along with its control signals. This method is valid with complementary (p-type transistor) device as well.
The pixel circuit comprises three transistors T1, T2, T3 and T4, two storage capacitors 32-33, and an organic light-emitting diode (OLED) 30. The pixel circuit is connected to a select line (SEL), a signal line (VDATA), a bias line (IBIAS), a voltage line (VDD), and a common ground.
Transistors T1, T2, T3 and T4 can be amorphous silicon, poly silicon, or organic thin-film transistors (TFT) or standard MOSFETs in CMOS technology.
The source terminal of the driving transistor TI is connected to the cathode electrode of the OLED 30. The drain terminal of TI is connected to the ground, and the gate terminal of Tl is connected to its drain terminal through T2. The storage capacitors 32-33 are in series and connected between the source of T1 and ground.
Transistor T2 is a switch. The gate terminal of T2 is connected to the select line (SEL).
The drain terminal of T2 is connected to the drain terminal of TI, and the source terminal is connected to the gate terminal of TI.
Transistor T3 is a switch. The gate terminal of T3 is connected to the select line (SEL).
The drain terminal of T3 is connected to the signal line (VDATA), and the source terminal is connected to the connected tenminal of the storage capacitors 32-33.
Transistor T4 is a switch. The gate terminal of T4 is connected to the select line (SEL).
The drain terminal of T4 is connected to bias line (IBIAS), and the source terminal is connected to the cathode terminal of the OLED 30. The anode electrode of the is connected to common ground.
The operation of the pixel presented in Fig 3 (b) consists of two operating cycles:
programming cycles and driving cycle. In the programming cycles, the first storage capacitor 32 is charged to a programming voltage plus the threshold voltage (VT) of TI, and the second storage capacitor 33 is charged to zero, resulting in a gate-source voltage ofTl as: VGS=-YP+VT.
With reference to the waveform shown on FIG. 3 (b) we describe the following operating cycles.
The first operating cycle: Both select lines are high. A bias current (IB) flows through the IBIAS, and VDATA goes to a programming voltage (VP), resulting in the stored voltage in the first storage capacitor 32 as:
YCl = R -VP+VT , where VCI is the stored voltage in the first storage capacitor 32, and (i is the coefficient in current-voltage (I-V) characteristics of the TFT given by Ips = p (VGS -VT)Z, The second operating cycle: While SEL is high, VDATA is zero, and IBIAS goes to zero. Because the OLED capacitance 31 and the parasitic capacitance of the bias line (IBIAS) are large, the voltage of node B (and node A) generated in the previous cycle stays untouched. Therefore, the gate-source voltage of Tl can be found as:
VCl = VB-VP+VT, where VGS is the gate-source voltage of Tl, and ~B = IB .
The third operatinyycle: SEL goes to zero, and a current independent of the threshold voltage flows through the OLED 30.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG.1 (a-c) shows the draft diagram of an embodiment of a pixel circuit and its corresponding waveforms.
FIG. Z shows the current stability of the pixel after 2 V VT shift in the driving TFT.
FIG. 3 (a-b) shows the circuit diagram of an embodiment of a pixel circuit and its corresponding waveform.
Claims
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002490848A CA2490848A1 (en) | 2004-11-16 | 2004-11-16 | Pixel circuit and driving method for fast compensated programming of amoled displays |
| EP11175225.9A EP2383721B1 (en) | 2004-11-16 | 2005-11-15 | System and Driving Method for Active Matrix Light Emitting Device Display |
| EP05807905A EP1825455A4 (en) | 2004-11-16 | 2005-11-15 | System and driving method for active matrix light emitting device display |
| PCT/CA2005/001730 WO2006053424A1 (en) | 2004-11-16 | 2005-11-15 | System and driving method for active matrix light emitting device display |
| CA002523841A CA2523841C (en) | 2004-11-16 | 2005-11-15 | System and driving method for active matrix light emitting device display |
| US11/274,957 US7889159B2 (en) | 2004-11-16 | 2005-11-15 | System and driving method for active matrix light emitting device display |
| CN2005800464787A CN101111880B (en) | 2004-11-16 | 2005-11-15 | System and driving method for active matrix light emitting device display |
| JP2007541598A JP2008521033A (en) | 2004-11-16 | 2005-11-15 | System and driving method for active matrix light emitting device display |
| TW094140360A TWI389085B (en) | 2004-11-16 | 2005-11-16 | System and driving method for active matrix type light-emitting device display |
| US12/952,951 US8319712B2 (en) | 2004-11-16 | 2010-11-23 | System and driving method for active matrix light emitting device display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002490848A CA2490848A1 (en) | 2004-11-16 | 2004-11-16 | Pixel circuit and driving method for fast compensated programming of amoled displays |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2490848A1 true CA2490848A1 (en) | 2006-05-16 |
Family
ID=36406143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002490848A Abandoned CA2490848A1 (en) | 2004-11-16 | 2004-11-16 | Pixel circuit and driving method for fast compensated programming of amoled displays |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101111880B (en) |
| CA (1) | CA2490848A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10192485B2 (en) | 2016-01-04 | 2019-01-29 | Boe Technology Group Co., Ltd. | Pixel compensation circuit and AMOLED display device |
| CN110827767A (en) * | 2014-08-06 | 2020-02-21 | 精工爱普生株式会社 | Electro-optical device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100939211B1 (en) * | 2008-02-22 | 2010-01-28 | 엘지디스플레이 주식회사 | Organic light emitting diode display and its driving method |
| CN104299566B (en) | 2008-04-18 | 2017-11-10 | 伊格尼斯创新公司 | System and driving method for light emitting device display |
| JP5310244B2 (en) * | 2009-05-12 | 2013-10-09 | ソニー株式会社 | Display device and display method |
| CN101847365B (en) * | 2010-04-13 | 2013-01-23 | 友达光电股份有限公司 | Pixel circuit, driving method thereof, and applied display panel and display |
| US9322869B2 (en) * | 2014-01-03 | 2016-04-26 | Pixtronix, Inc. | Display apparatus including dummy display element for TFT testing |
| CN110930947A (en) * | 2019-11-28 | 2020-03-27 | 武汉华星光电半导体显示技术有限公司 | Pixel compensation circuit, driving method thereof and display device |
| KR102773247B1 (en) * | 2020-07-23 | 2025-02-28 | 삼성디스플레이 주식회사 | Pixel and display device having the same |
| CN114170966B (en) * | 2021-12-09 | 2023-09-08 | 南京国兆光电科技有限公司 | Image display device and display method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001147659A (en) * | 1999-11-18 | 2001-05-29 | Sony Corp | Display device |
| US6414661B1 (en) * | 2000-02-22 | 2002-07-02 | Sarnoff Corporation | Method and apparatus for calibrating display devices and automatically compensating for loss in their efficiency over time |
-
2004
- 2004-11-16 CA CA002490848A patent/CA2490848A1/en not_active Abandoned
-
2005
- 2005-11-15 CN CN2005800464787A patent/CN101111880B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110827767A (en) * | 2014-08-06 | 2020-02-21 | 精工爱普生株式会社 | Electro-optical device |
| CN110827767B (en) * | 2014-08-06 | 2022-06-24 | 精工爱普生株式会社 | Electro-optical device |
| US10192485B2 (en) | 2016-01-04 | 2019-01-29 | Boe Technology Group Co., Ltd. | Pixel compensation circuit and AMOLED display device |
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| Publication number | Publication date |
|---|---|
| CN101111880B (en) | 2013-01-02 |
| CN101111880A (en) | 2008-01-23 |
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